JPH1129392A - Gas phase epitaxial growth and device therefor - Google Patents
Gas phase epitaxial growth and device thereforInfo
- Publication number
- JPH1129392A JPH1129392A JP18116397A JP18116397A JPH1129392A JP H1129392 A JPH1129392 A JP H1129392A JP 18116397 A JP18116397 A JP 18116397A JP 18116397 A JP18116397 A JP 18116397A JP H1129392 A JPH1129392 A JP H1129392A
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- Prior art keywords
- chamber
- susceptor
- substrate
- transfer
- reaction chamber
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、原料ガスを吹き
付けて基板上にエピタキシャル層を成長させる気層エピ
タキシャル成長方法及び装置に係り、特に反応室とパス
ボックスとの間のパスを複線化してエピタキシャル基板
の生産性を高めたものに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase epitaxial growth method and apparatus for growing an epitaxial layer on a substrate by blowing a source gas, and more particularly, to a method for forming an epitaxial substrate by making a path between a reaction chamber and a pass box double-tracked. Related to increased productivity.
【０００２】[0002]
【従来の技術】図６は、従来の横型気層エピタキシャル
成長装置の説明図であり、図６(a) はその構成を概略的
に示す斜視図、図６(b) は平面図である。2. Description of the Related Art FIG. 6 is an explanatory view of a conventional lateral gaseous layer epitaxial growth apparatus. FIG. 6 (a) is a perspective view schematically showing the configuration, and FIG. 6 (b) is a plan view.
【０００３】図６(a) に示すように、装置の外部に対し
てＧａＡｓなどの成長用基板を搬入・搬出するパスボッ
クス６は、ゴム製手袋を有するグローブボックス２４に
連結されている。グローブボックス２４と、基板上にエ
ピタキシャル層を成長させる反応室１との間には、基板
をセットしたサセプタ（図示せず）を搬送するロボット
アーム（図示せず）を設けた搬送室２３が連結されてい
る。As shown in FIG. 6A, a pass box 6 for carrying a growth substrate such as GaAs to / from the outside of the apparatus is connected to a glove box 24 having rubber gloves. A transfer chamber 23 provided with a robot arm (not shown) for transferring a susceptor (not shown) on which the substrate is set is connected between the glove box 24 and the reaction chamber 1 for growing an epitaxial layer on the substrate. Have been.
【０００４】図６(b) に示すように、搬送室２３に設け
られたリング状のロボットアーム９に図示しないサセプ
タは載せられ、サセプタはその動線１３に示すように、
ロボットアーム９により搬送室２３を介してグローブボ
ックス２４と反応室１間を搬送される。反応室１に搬送
されたサセプタは、ターンテーブル７に載った状態でタ
ーンテーブル７ごと、水平に回転する。[0006] As shown in FIG. 6 (b), a susceptor (not shown) is mounted on a ring-shaped robot arm 9 provided in a transfer chamber 23, and the susceptor is moved as shown by a flow line 13 in FIG.
The robot arm 9 is transferred between the glove box 24 and the reaction chamber 1 via the transfer chamber 23. The susceptor conveyed to the reaction chamber 1 rotates horizontally together with the turntable 7 while resting on the turntable 7.
【０００５】次に作用を説明する。Next, the operation will be described.
【０００６】(1) 成長用基板（図示せず）を搬入したパ
スボックス６を真空引き窒素置換する。その後、適宜の
手段により基板をパスボックス６からグローブボックス
２４内に移す。グローブボックス２４内で、前記基板
は、グローブボックス２４内でサセプタにセットされ
る。(1) The pass box 6 carrying the growth substrate (not shown) is evacuated and replaced with nitrogen. Thereafter, the substrate is moved from the pass box 6 into the glove box 24 by an appropriate means. In the glove box 24, the substrate is set on the susceptor in the glove box 24.
【０００７】(2) 前記基板は、サセプタごとロボットア
ーム９によって、グローブボックス２４から搬送室２３
に搬送される。前記サセプタがグローブボックス２４内
にある状態では、グローブボックス２４と搬送室２３と
の間の扉が開いているため、これらグローブボックス２
４と搬送室２３と雰囲気は混じり合う。この時点では、
搬送室２３と反応室１との間の扉は、閉じている。(2) The substrate is transferred from the glove box 24 to the transfer chamber 23 by the robot arm 9 together with the susceptor.
Transported to When the susceptor is in the glove box 24, the door between the glove box 24 and the transfer chamber 23 is open.
4 and the transfer chamber 23 and the atmosphere are mixed. At this point,
The door between the transfer chamber 23 and the reaction chamber 1 is closed.
【０００８】(3) 搬送室２３への搬送が終了すると、搬
送室２３とグローブボックス２４との間の扉が閉じ、搬
送室２３内の真空引き水素置換を行う。この搬送室２３
は、真空引き水素置換、真空引き窒素置換、及び搬送機
能以外の機能は持たず、搬送のために反応室１との境に
ある扉を開けた時以外は、環境的に反応室１とは、完全
に遮断されていて、常に、常温を維持している。(3) When the transfer to the transfer chamber 23 is completed, the door between the transfer chamber 23 and the glove box 24 is closed, and the inside of the transfer chamber 23 is evacuated and replaced with hydrogen. This transfer chamber 23
Has no functions other than vacuum evacuation hydrogen substitution, evacuation nitrogen substitution, and a transfer function, and is environmentally different from the reaction chamber 1 except when a door at the boundary with the reaction chamber 1 is opened for transfer. It is completely shut off and always at room temperature.
【０００９】(4) 搬送室２３内で真空引き水素置換を行
った後、搬送室２３と反応室１との間の扉を開き、サセ
プタ及び基板をロボットアーム９に載せて、反応室１に
搬送し、反応室１内でサセプタをロボットアーム９から
ターンテーブル７に移し替える。その後、ロボットアー
ム９が搬送室２３に戻ると搬送室２３と反応室１との間
の扉が閉じる。なお、搬送室２３は、ロボットアーム９
のホームポジションである。(4) After performing vacuum evacuation and hydrogen substitution in the transfer chamber 23, the door between the transfer chamber 23 and the reaction chamber 1 is opened, and the susceptor and the substrate are placed on the robot arm 9, and The susceptor is transferred from the robot arm 9 to the turntable 7 in the reaction chamber 1. Thereafter, when the robot arm 9 returns to the transfer chamber 23, the door between the transfer chamber 23 and the reaction chamber 1 closes. The transfer chamber 23 is provided with the robot arm 9.
Home position.
【００１０】(5) サセプタの反応室１への搬送が終了し
た時点では、反応室１は、常温且つ常圧状態である。そ
の後、反応室１のヒータに電流を流し、反応室１を数百
℃の基板成長温度に加熱し、基板成長圧力に減圧する。
４００℃を越えた時点から、基板表面からのＡｓ（砒
素）抜けを防ぐため、アルシンガス（ＡｓＨ3 ガス）を
基板表面に流す。(5) When the transfer of the susceptor to the reaction chamber 1 is completed, the reaction chamber 1 is at normal temperature and normal pressure. Thereafter, an electric current is supplied to the heater of the reaction chamber 1 to heat the reaction chamber 1 to a substrate growth temperature of several hundred degrees Celsius and reduce the pressure to the substrate growth pressure.
After the temperature exceeds 400 ° C., arsine gas (AsH 3 gas) is flown over the substrate surface in order to prevent As (arsenic) from escaping from the substrate surface.
【００１１】(6) 反応室１が基板成長温度に達した後、
原料ガスを反応室１内のガス導入口（図示せず）より供
給することにより、基板面にエピタキシャル層が形成さ
れる。成長が終わった後は、ヒータ加熱を終了し反応室
１が４００℃に冷却されるまでは、Ａｓ抜けを防ぐため
にアルシンガスを基板表面に流す。その後は、サセプタ
及び基板が取り出し可能な温度になるまで、更に冷却す
る。(6) After the reaction chamber 1 reaches the substrate growth temperature,
By supplying a source gas from a gas inlet (not shown) in the reaction chamber 1, an epitaxial layer is formed on the substrate surface. After the growth is completed, arsine gas is flowed over the surface of the substrate to prevent As from being removed until the heating of the heater is completed and the reaction chamber 1 is cooled to 400 ° C. Thereafter, the temperature is further cooled until the susceptor and the substrate reach a temperature at which they can be taken out.
【００１２】(7) 冷却が終了すると、再び反応室１と搬
送室２３との間の扉を開き、ロボットアーム９を用いて
サセプタ及び基板を反応室１から搬送室２３に搬送す
る。次いで、反応室１と搬送室２３との間の扉を閉じ、
搬送室２３で真空引き窒素置換を行う。(7) When the cooling is completed, the door between the reaction chamber 1 and the transfer chamber 23 is opened again, and the susceptor and the substrate are transferred from the reaction chamber 1 to the transfer chamber 23 by using the robot arm 9. Next, the door between the reaction chamber 1 and the transfer chamber 23 is closed,
The transfer chamber 23 is evacuated and replaced with nitrogen.
【００１３】(8) その後、搬送室２３とグローブボック
ス２４との間の扉を開け、基板をサセプタごと搬送室２
３からグローブボックス２４に搬送し、このグローブボ
ックス２４でサセプタ１１から基板を取り外し、パスボ
ックス６に基板を移す。この時、パスボックス６にある
次の成長用基板をグローブボックス２４に移す。(8) Thereafter, the door between the transfer chamber 23 and the glove box 24 is opened, and the substrate is transferred together with the susceptor to the transfer chamber 2.
3 is transferred to the glove box 24, the substrate is removed from the susceptor 11 by the glove box 24, and the substrate is moved to the pass box 6. At this time, the next growth substrate in the pass box 6 is moved to the glove box 24.
【００１４】その後、(1) 〜(8) を繰り返す。Thereafter, (1) to (8) are repeated.
【００１５】[0015]
【発明が解決しようとする課題】上述したような、従来
の横型気層エピタキシャル成長装置を用いたエピタキシ
ャル成長では、反応室とパスボックス間に１パスの搬送
路しか備えていないので、処理基板を反応室からパスボ
ックスに移した後でなければ、次の未処理基板をパスボ
ックスから反応室に搬送することができないため、エピ
タキシャル基板を連続成長させることができない。In the above-described epitaxial growth using a conventional horizontal gaseous-layer epitaxial growth apparatus, only one transfer path is provided between the reaction chamber and the pass box. Unless the substrate is transferred from the pass box to the reaction chamber, the next unprocessed substrate cannot be transferred from the pass box to the reaction chamber, so that the epitaxial substrate cannot be continuously grown.
【００１６】また、サセプタの反応室１への搬送が終了
した時点では、反応室１は、常温且つ常圧状態である。
このため、サセプタの反応室１への搬送毎に、基板成長
温度に加熱、基板成長圧力に減圧する必要がある。When the transfer of the susceptor to the reaction chamber 1 is completed, the reaction chamber 1 is at normal temperature and normal pressure.
Therefore, each time the susceptor is transported to the reaction chamber 1, it is necessary to heat the substrate to the substrate growth temperature and reduce the pressure to the substrate growth pressure.
【００１７】このため、基板成長に費やす時間の内、実
際の基板成長に用いる正味の時間は、成長するエピタキ
シャル構造により変るが、約１／９〜１／３であり、残
りの８／９〜２／３は、基板を成長温度にするために用
いられる昇温時間や、成長圧力への減圧時間や、成長後
基板を装置外に取り出せる温度になるまでの降温時間
や、成長後大気圧へ戻す昇圧時間や、あるいは基板搬送
時間で消費され、生産効率が非常に悪かった。For this reason, of the time spent for substrate growth, the net time used for actual substrate growth depends on the epitaxial structure to be grown, but is about 1/9 to 1/3, and the remaining 8/9 to Two-thirds are the temperature rise time used to bring the substrate to the growth temperature, the pressure reduction time to the growth pressure, the temperature fall time until the substrate can be taken out of the apparatus after the growth, and the atmospheric pressure after the growth. It was consumed in the returning pressure rising time or the substrate transport time, and the production efficiency was very poor.
【００１８】本発明の目的は、エピタキシャル基板を連
続成長させることによって、上述した従来技術の問題点
を解消して、生産性を高めた気層エピタキシャル成長方
法及び装置を提供することにある。An object of the present invention is to provide a vapor-phase epitaxial growth method and apparatus capable of improving productivity by solving the above-mentioned problems of the prior art by continuously growing an epitaxial substrate.
【００１９】[0019]
【課題を解決するための手段】請求項１の発明は、外部
からパスボックスに搬入した未処理基板を反応室に搬送
し、反応室でエピタキシャル成長し、エピタキシャル成
長した処理基板をパスボックスに搬送してパスボックス
から外部に搬出する気相エピタキシャル成長方法におい
て、反応室とパスボックスとの間に２つのパスを備え、
(1) 反応室で未処理基板を成長中に外部からパスボック
スに搬入した次の未処理基板を第１のパス中に待機さ
せ、(2) 成長後、処理基板を第２のパスを使って反応室
からパスボックスに搬送する過程で、第１のパス中に待
機させておいた次の未処理基板を反応室に搬送し、その
後、(1) と(2) の工程を繰り返すようにしたものであ
る。According to a first aspect of the present invention, an unprocessed substrate carried into a pass box from the outside is transported to a reaction chamber, epitaxially grown in the reaction chamber, and the epitaxially grown processed substrate is transported to a pass box. In a vapor phase epitaxial growth method carried out from a pass box, two paths are provided between a reaction chamber and a pass box,
(1) While the unprocessed substrate is being grown in the reaction chamber, the next unprocessed substrate brought into the pass box from the outside is made to stand by during the first pass. (2) After the growth, the processed substrate is used in the second pass. In the process of transferring from the reaction chamber to the pass box, the next unprocessed substrate that has been waiting during the first pass is transferred to the reaction chamber, and then the steps (1) and (2) are repeated. It was done.
【００２０】反応室とパスボックスとの間に２つのパス
を備えると、反応室とパスボックス間に１パスしか備え
ていない場合と異なり、パスボックスに向かう処理基板
と反応室に向かう未処理基板とが搬送上衝突することが
ないから、エピタキシャル基板を連続成長させることが
でき、スループットが向上する。When two paths are provided between the reaction chamber and the pass box, unlike the case where only one path is provided between the reaction chamber and the pass box, the processed substrate toward the pass box and the unprocessed substrate toward the reaction chamber are different. Does not collide with the substrate during transport, the epitaxial substrate can be continuously grown, and the throughput is improved.
【００２１】請求項２の発明は、外部からパスボックス
に搬入した未処理基板を反応室に搬送し、反応室でエピ
タキシャル成長し、エピタキシャル成長した処理基板を
パスボックスに搬送してパスボックスから外部に搬出す
る気相エピタキシャル成長装置において、反応室とパス
ボックスとの間に、反応室に通じる第１搬送室とパスボ
ックスに通じる第２搬送室とを設け、第２搬送室から待
機室を経て第１搬送室に至る第１のパスと第１搬送室か
ら冷却室を経て第２搬送室に至る第２のパスとを設けた
ものである。According to a second aspect of the present invention, an unprocessed substrate carried into a pass box from outside is transported to a reaction chamber, epitaxially grown in the reaction chamber, and a processed substrate epitaxially grown is transported to a pass box and carried out of the pass box to the outside. In a vapor phase epitaxial growth apparatus, a first transfer chamber leading to the reaction chamber and a second transfer chamber leading to the pass box are provided between the reaction chamber and the pass box, and the first transfer chamber passes through the standby chamber from the second transfer chamber. A first path leading to the chamber and a second path leading from the first transfer chamber to the second transfer chamber via the cooling chamber are provided.
【００２２】第２搬送室から待機室を経て第１搬送室に
至る第１のパスと、第１搬送室から冷却室を経て第２搬
送室に至る第２のパスとを設けると、エピタキシャル成
長を終了した処理基板を反応室から第２のパスを通して
パスボックスに搬送するとき、その搬送を邪魔すること
なく、第１のパスを通して次の基板をパスボックスから
反応室に搬送することができる。したがって、反応室で
未処理基板を成長中に次の未処理基板を第１のパスを構
成する待機室で待機させ、反応室から処理基板を第２の
パスを使って冷却室に搬送した後、待機室で待機させて
おいた次の未処理基板を第１のパスを使って反応室に搬
送することができる。When a first path from the second transfer chamber to the first transfer chamber via the standby chamber and a second path from the first transfer chamber to the second transfer chamber via the cooling chamber are provided, epitaxial growth can be performed. When transferring the completed processed substrate from the reaction chamber to the pass box through the second pass, the next substrate can be transferred from the pass box to the reaction chamber through the first pass without disturbing the transfer. Therefore, while the unprocessed substrate is growing in the reaction chamber, the next unprocessed substrate is made to stand by in the standby chamber constituting the first pass, and the processed substrate is transported from the reaction chamber to the cooling chamber using the second pass. The next unprocessed substrate waiting in the standby chamber can be transported to the reaction chamber using the first pass.
【００２３】請求項３の発明は、反応室を基板成長温度
に加熱、基板成長圧力に減圧した後、原料ガスを流し、
反応室にサセプタごと搬送された未処理基板上にエピタ
キシャル層を成長させる気相エピタキシャル成長装置に
おいて、上記反応室で第１サセプタにセットした未処理
基板をエピタキシャル成長させている間、次の未処理基
板を第２サセプタごと待機させる待機室と、待機室と反
応室との間に設けられ、第１搬送用ロボットアームを有
し、そのロボットアームにより反応室でエピタキシャル
成長を終了した処理基板を第１サセプタごと冷却室に搬
送する一方、待機室で待機する次の未処理基板を第２サ
セプタごと反応室へ搬送する第１搬送室とを備える。According to a third aspect of the present invention, the reaction chamber is heated to the substrate growth temperature, and the pressure is reduced to the substrate growth pressure.
In a vapor phase epitaxial growth apparatus for growing an epitaxial layer on an unprocessed substrate transported together with a susceptor to a reaction chamber, the next unprocessed substrate is epitaxially grown while the unprocessed substrate set on the first susceptor is being epitaxially grown in the reaction chamber. A standby chamber for waiting with the second susceptor; and a first transfer robot arm provided between the standby chamber and the reaction chamber, the processing substrate having the epitaxial growth completed in the reaction chamber by the robot arm. A first transfer chamber that transfers the next unprocessed substrate that is waiting in the standby chamber to the reaction chamber together with the second susceptor while transferring the substrate to the cooling chamber.
【００２４】さらに第１搬送室に連結され、第１搬送室
のロボットアームにより反応室から搬送された処理基板
を第１サセプタごと冷却する冷却室と、冷却室と待機室
との間に設けられ、第２搬送用ロボットアームを有し、
そのロボットアームにより冷却室で冷却を終了した処理
基板を第１サセプタから外してパスボックスへ搬送する
一方、パスボックスから次の未処理基板を第１サセプタ
にセットして第１サセプタごと待機室に搬送する第２搬
送室と、第２搬送室に連結され、外部に対して基板を搬
入・搬出するパスボックスとを備えたものである。Further, a cooling chamber connected to the first transfer chamber for cooling the processing substrate transferred from the reaction chamber by the robot arm of the first transfer chamber together with the first susceptor is provided between the cooling chamber and the standby chamber. , A second transfer robot arm,
While the processing substrate cooled in the cooling chamber by the robot arm is removed from the first susceptor and transported to the pass box, the next unprocessed substrate is set from the pass box to the first susceptor and the first susceptor is placed in the standby chamber together with the first susceptor. The apparatus includes a second transfer chamber for transferring, and a pass box connected to the second transfer chamber and for loading and unloading a substrate to and from the outside.
【００２５】(1) 反応室で第１サセプタにセットした未
処理基板をエピタキシャル成長させている間、待機室に
は次の未処理基板が第２サセプタごと待機している。
(2) 反応室での未処理基板上へのエピタキシャル成長が
終了すると、第１搬送室のロボットアームにより処理基
板を反応室から第１サセプタごと冷却室に搬送する。
(3) 冷却室への搬送後、待機室で待機させていた次の未
処理基板を、第１搬送室のロボットアームにより第２サ
セプタごと反応室へ搬送する。冷却室で処理基板を第１
サセプタごと冷却している間、反応室で第２サセプタに
セットした未処理基板をエピタキシャル成長させる。
(4) 冷却室での処理基板の冷却が終了すると、第２搬送
室のロボットアームにより処理基板を第１サセプタから
外してパスボックスへ搬送し、パスボックスにある次の
未処理基板を第１サセプタにセットして第１サセプタご
と待機室に搬送する。そして(1) 〜(4) の工程を繰り返
す。(1) While the unprocessed substrate set on the first susceptor is being epitaxially grown in the reaction chamber, the next unprocessed substrate is waiting in the standby chamber together with the second susceptor.
(2) When the epitaxial growth on the unprocessed substrate in the reaction chamber is completed, the processed substrate is transferred from the reaction chamber to the cooling chamber together with the first susceptor by the robot arm of the first transfer chamber.
(3) After the transfer to the cooling chamber, the next unprocessed substrate that has been waiting in the standby chamber is transferred to the reaction chamber together with the second susceptor by the robot arm of the first transfer chamber. First processing substrate in cooling chamber
While cooling the entire susceptor, the unprocessed substrate set on the second susceptor is epitaxially grown in the reaction chamber.
(4) When the processing substrate has been cooled in the cooling chamber, the processing substrate is removed from the first susceptor by the robot arm of the second transfer chamber and transferred to the pass box, and the next unprocessed substrate in the pass box is transferred to the first box. It is set on the susceptor and transported together with the first susceptor to the waiting room. Then, the steps (1) to (4) are repeated.
【００２６】請求項４の発明は、請求項３の発明におい
て、第１搬送室は、成長温度、成長圧力に保持して、少
なくとも第１搬送室に第１または第２サセプタのいずれ
かがあるときはＡｓＨ3 ガスを流し続ける機能有し、冷
却室は、第１搬送室と冷却室との間で第１または第２サ
セプタのいずれかを搬送するときには、成長圧力、成長
温度付近、ＡｓＨ3 雰囲気に設定でき、冷却室と第２搬
送室の間で搬送を行うときは、大気圧、常温、窒素雰囲
気に設定できる機能を有し、待機室は、待機室と第１搬
送室との間で第１または第２サセプタのいずれかを搬送
するときには、成長圧力、成長温度付近、ＡｓＨ3 雰囲
気に設定でき、第２搬送室と待機室の間で搬送を行うと
きは、大気圧、常温、窒素雰囲気に設定できる機能を有
し、かつ反応室と第１搬送室との間に第１扉を、第１搬
送室と待機室との間に第２扉を、第１搬送室と冷却室と
の間に第３扉を、冷却室と第２搬送室との間に第１二重
扉を、待機室と第２搬送室との間に第２二重扉をそれぞ
れ設けたものである。According to a fourth aspect of the present invention, in the invention of the third aspect, the first transfer chamber is maintained at a growth temperature and a growth pressure, and at least one of the first and second susceptors is provided in the first transfer chamber. In some cases, the cooling chamber has a function of continuously flowing AsH 3 gas, and when transferring either the first or the second susceptor between the first transfer chamber and the cooling chamber, the cooling chamber has a growth pressure, a growth temperature vicinity, an AsH 3 gas vicinity. Atmospheric pressure, room temperature, and a nitrogen atmosphere can be set when transferring between the cooling chamber and the second transfer chamber. The standby chamber is located between the standby chamber and the first transfer chamber. When transporting either the first or second susceptor, the growth pressure, the growth temperature, and the AsH 3 atmosphere can be set. When the transport is performed between the second transport chamber and the standby chamber, atmospheric pressure, normal temperature, It has a function that can be set in a nitrogen atmosphere, A first door between the transfer chamber, a second door between the first transfer chamber and the standby chamber, a third door between the first transfer chamber and the cooling chamber, and a cooling chamber and a second transfer chamber. , And a second double door is provided between the standby chamber and the second transfer chamber.
【００２７】各扉を操作して、常時反応室を成長温度、
成長圧力に保持できるようにしたので、従来のようにそ
の都度反応室の昇温降温や減圧昇圧を行なう場合に比し
て、それらに要する時間を短縮することができる。By operating each door, the reaction chamber is constantly maintained at the growth temperature,
Since the pressure can be maintained at the growth pressure, the time required for heating and cooling and raising and lowering the pressure of the reaction chamber each time can be shortened as in the conventional case.
【００２８】[0028]
【発明の実施の形態】以下に本発明をＭＯＶＰＥ法を用
いた横型気層エピタキシャル成長装置に適用した実施の
形態を説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to a horizontal gaseous layer epitaxial growth apparatus using the MOVPE method will be described below.
【００２９】図１は、横型気層エピタキシャル成長装置
の概略構成を示す斜視図である。図６に示す従来と異な
る点は、待機室５と冷却室２を専用に設けて２パスを確
保し、かつグローブボックスに相当する第２搬送室４に
ロボットアーム９を新設して、２つのサセプタを同時に
流せるようにした点である。FIG. 1 is a perspective view showing a schematic configuration of a horizontal gaseous layer epitaxial growth apparatus. 6 is different from the related art shown in FIG. 6 in that a standby chamber 5 and a cooling chamber 2 are provided exclusively to secure two passes, and a robot arm 9 is newly installed in a second transfer chamber 4 corresponding to a glove box. The point is that the susceptor can be flown at the same time.
【００３０】図１(a) に示すように、パスボックス６と
反応室１との間には、第１搬送室３、冷却室２、待機室
５、およびグローブボックスとしての第２搬送室４が連
結されている。図１(b) はこの装置の平面図である。As shown in FIG. 1A, between the pass box 6 and the reaction chamber 1, there are a first transfer chamber 3, a cooling chamber 2, a standby chamber 5, and a second transfer chamber 4 as a glove box. Are connected. FIG. 1 (b) is a plan view of this device.
【００３１】反応室１は、サセプタを回転するターンテ
ーブル７を有する。ターンテーブル７にＧａＡｓ基板を
下向きにセットしたサセプタ（図示せず）を置き、反応
室１を基板成長温度に加熱、基板成長圧力に減圧した
後、サセプタの一方から水平に原料ガスを流し、基板上
にＧａＡｓエピタキシャル層を成長させる。The reaction chamber 1 has a turntable 7 for rotating a susceptor. A susceptor (not shown) in which a GaAs substrate is set downward is placed on the turntable 7, the reaction chamber 1 is heated to a substrate growth temperature, and the pressure is reduced to a substrate growth pressure. A GaAs epitaxial layer is grown thereon.
【００３２】反応室１に第１扉３１を介して連結される
第１搬送室３は、腕の先端にリング部をもつ第１搬送用
ロボットアーム９を有し、そのロボットアーム９により
反応室１でエピタキシャル成長を終了した処理基板を第
１サセプタごと冷却室２に搬送する一方、待機室５で待
機する次の未処理基板を第２サセプタごと反応室１へ搬
送する。The first transfer chamber 3 connected to the reaction chamber 1 via the first door 31 has a first transfer robot arm 9 having a ring at the tip of an arm. The processed substrate that has completed the epitaxial growth in step 1 is transported to the cooling chamber 2 together with the first susceptor, while the next unprocessed substrate waiting in the standby chamber 5 is transported to the reaction chamber 1 together with the second susceptor.
【００３３】第１搬送室３に第２扉３２を介して連結さ
れる待機室５は、サセプタ支持板１０を有し、反応室１
で第１サセプタにセットした未処理基板をエピタキシャ
ル成長させている間、次の未処理基板を第２サセプタご
とサセプタ支持板１０に支持して待機させる。The standby chamber 5 connected to the first transfer chamber 3 via the second door 32 has a susceptor support plate 10 and the reaction chamber 1
While the unprocessed substrate set on the first susceptor is epitaxially grown, the next unprocessed substrate together with the second susceptor is supported by the susceptor support plate 10 and is on standby.
【００３４】第１搬送室３に第３扉３３を介して連結さ
れる冷却室２は、サセプタ支持板１０を有し、第１搬送
室３のロボットアーム９により反応室１から搬送された
処理基板を第１サセプタごとサセプタ支持板１０に支持
して冷却する。The cooling chamber 2 connected to the first transfer chamber 3 via the third door 33 has a susceptor support plate 10, and the processing transferred from the reaction chamber 1 by the robot arm 9 of the first transfer chamber 3. The substrate is supported on the susceptor support plate 10 together with the first susceptor and cooled.
【００３５】冷却室２に第１二重扉３４、３５を介して
連結されるとともに、待機室５に第２二重扉３６、３７
を介して連結される第２搬送室４は、腕の先端にリング
部をもつ第２搬送用ロボットアーム９を有し、そのロボ
ットアーム９により冷却室２で冷却された処理基板を第
１サセプタから外してパスボックス６へ搬送する一方、
パスボックス６から次の未処理基板を第１サセプタにセ
ットして第１サセプタごと待機室５に搬送する。The cooling chamber 2 is connected via first double doors 34, 35, and the standby chamber 5 is connected to second double doors 36, 37.
The second transfer chamber 4 which is connected via the first arm has a second transfer robot arm 9 having a ring portion at the tip of the arm, and the processing substrate cooled in the cooling chamber 2 by the robot arm 9 is transferred to the first susceptor. While being transported to the pass box 6
The next unprocessed substrate is set on the first susceptor from the pass box 6 and transported to the standby chamber 5 together with the first susceptor.
【００３６】パスボックス６は、第２搬送室４に連結さ
れ、基板のみを装置の内外へ搬入・搬出する。The pass box 6 is connected to the second transfer chamber 4, and carries in / out only the substrate into and out of the apparatus.
【００３７】サセプタは、第２搬送室４に設けられたロ
ボットアーム９により、第２搬送室４と冷却室２または
待機室５間、また第１搬送室３に設けられたロボットア
ーム９により、第１搬送室３と冷却室２または待機室５
の間、及び第１搬送室３と反応室１間を搬送され得る
が、ここでは実線で示す動線１３のように動かす。第１
のパスは第２搬送室４、待機室５、第１搬送室３で構成
され、第２のパスは第１搬送室３、冷却室２、第２搬送
室４で構成される。The susceptor is moved between the second transfer chamber 4 and the cooling chamber 2 or the standby chamber 5 by a robot arm 9 provided in the second transfer chamber 4 and by a robot arm 9 provided in the first transfer chamber 3. First transfer chamber 3 and cooling chamber 2 or standby chamber 5
, And between the first transfer chamber 3 and the reaction chamber 1, but here, it is moved as a flow line 13 shown by a solid line. First
Path includes a second transfer chamber 4, a standby chamber 5, and a first transfer chamber 3, and a second path includes the first transfer chamber 3, the cooling chamber 2, and the second transfer chamber 4.
【００３８】上記反応室１には、常時、基板成長温度、
基板成長圧力に保持してＡｓＨ3 ガスを流し続ける。第
１搬送室３にも同様に、常に、基板成長温度、基板成長
圧力に保持して、少なくとも第１搬送室３内にサセプタ
１１がある時は、ＡｓＨ3 ガスを流し続ける。The reaction chamber 1 always has a substrate growth temperature,
The AsH 3 gas is kept flowing while maintaining the substrate growth pressure. Similarly, in the first transfer chamber 3, the substrate growth temperature and the substrate growth pressure are constantly maintained, and when at least the susceptor 11 is in the first transfer chamber 3, the AsH 3 gas is kept flowing.
【００３９】冷却室２は、第１搬送室３との間でサセプ
タ１１を搬送するときは、成長圧力、成長温成長圧力、
成長温度付近、ＡｓＨ3 雰囲気に設定できる。また、冷
却室２は、第２搬送室４との間で搬送を行うときは、大
気圧、常温、窒素雰囲気に設定できる。When the susceptor 11 is transported between the cooling chamber 2 and the first transport chamber 3, the growth pressure, the growth temperature, the growth pressure,
An AsH 3 atmosphere can be set around the growth temperature. The cooling chamber 2 can be set to the atmospheric pressure, the normal temperature, and the nitrogen atmosphere when the cooling chamber 2 is transferred to and from the second transfer chamber 4.
【００４０】反応室１では、図２(a) に示すように、サ
セプタ１１は、その上面に設けた被係止部１５をターン
テーブル７の外周に係止、支持され、基板成長中は、タ
ーンテーブル７に取り付けた回転軸８を中心にターンテ
ーブル７ごと水平に回転する。横型気相エピタキシャル
成長では、後述するようにサセプタ１１の裏面に基板Ｗ
を下向きにセットして、サセプタ１１の一方から水平に
原料ガスを流して回転する基板Ｗ上にエピタキシャル層
を成長させる。In the reaction chamber 1, as shown in FIG. 2 (a), the susceptor 11 has a locked portion 15 provided on its upper surface locked and supported on the outer periphery of the turntable 7. The turntable 7 and the turntable 7 rotate horizontally around a rotation shaft 8 attached to the turntable 7. In the lateral vapor phase epitaxial growth, a substrate W is provided on the back surface of the susceptor 11 as described later.
Is set downward, and a source gas is caused to flow horizontally from one of the susceptors 11 to grow an epitaxial layer on the rotating substrate W.
【００４１】冷却室２及び待機室５では、図２(b) に示
すように、サセプタ１１は、その上面に設けた被係止部
１５を円形のサセプタ支持板１０の外周に係止され、冷
却中または待機中は、サセプタ支持軸１４によって支持
される。サセプタ支持板１０は、回転機能は持たない
が、サセプタの姿勢を変更できるように、サセプタ支持
軸１４の回動により水平に９０度だけ回転しサセプタ１
１の向きを９０度だけ変えることができる。In the cooling chamber 2 and the standby chamber 5, as shown in FIG. 2 (b), the susceptor 11 has a locked portion 15 provided on the upper surface thereof locked to the outer periphery of the circular susceptor support plate 10, During cooling or standby, the susceptor is supported by the support shaft 14. Although the susceptor support plate 10 does not have a rotation function, the susceptor 1 is rotated horizontally by 90 degrees by the rotation of the susceptor support shaft 14 so that the attitude of the susceptor can be changed.
One can change the orientation by 90 degrees.
【００４２】反応室１と第１搬送室３間、第１搬送室３
と待機室５間、第１搬送室３と冷却室２間、冷却室２と
第２搬送室４間、第２搬送室４と待機室５間におけるサ
セプタ１１の搬送は、図３に示すように、ロボットアー
ム９によって行なわれる。ロボットアーム９はアームの
先端にリング部を有し、そのリング部上にサセプタ１１
を載置することにより、サセプタ１１の裏面周方向に下
向きにセットされる複数枚の基板Ｗとの接触を回避して
いる。Between the reaction chamber 1 and the first transfer chamber 3, the first transfer chamber 3
The transfer of the susceptor 11 between the first transfer chamber 3 and the cooling chamber 2, between the first transfer chamber 3 and the cooling chamber 2, between the cooling chamber 2 and the second transfer chamber 4, and between the second transfer chamber 4 and the standby chamber 5 is as shown in FIG. 3. Next, the operation is performed by the robot arm 9. The robot arm 9 has a ring portion at the tip of the arm, and the susceptor 11 is provided on the ring portion.
Is placed on the susceptor 11 to avoid contact with a plurality of substrates W set downward in the circumferential direction of the rear surface of the susceptor 11.
【００４３】さて、上述した横型気層エピタキシャル成
長装置の動作を、図４を用いて説明する。説明の便宜
上、反応室１でエピタキシャル成長が終了した時点から
説明する。Now, the operation of the above-mentioned lateral gaseous layer epitaxial growth apparatus will be described with reference to FIG. For convenience of explanation, the description starts from the point when the epitaxial growth is completed in the reaction chamber 1.
【００４４】図４(a) 、(b) に示すように、まず反応室
１でエピタキシャル成長が終わると、反応室１と第１搬
送室３との間の第１扉３１が開き、第１搬送室３内のロ
ボットアームを用いてサセプタ１１を基板Ｗごと反応室
１から第１搬送室３へ取り出し、第１扉３１を閉じる。
このとき、第１搬送室３の隣の待機室５には、次の基板
Ｗがサセプタ１１ごと待機している。As shown in FIGS. 4A and 4B, when the epitaxial growth is completed in the reaction chamber 1, the first door 31 between the reaction chamber 1 and the first transfer chamber 3 is opened, and the first transfer is performed. The susceptor 11 is taken out of the reaction chamber 1 together with the substrate W into the first transfer chamber 3 using the robot arm in the chamber 3, and the first door 31 is closed.
At this time, the next substrate W together with the susceptor 11 is waiting in the standby chamber 5 adjacent to the first transfer chamber 3.
【００４５】図４(c) 、(d) に示すように、つぎに第１
搬送室３と冷却室２との間の第３扉３３を開き、前記サ
セプタ１１を基板Ｗごと第１搬送室３のロボットアーム
を用いて冷却室２のサセプタ支持板に搬送し、第１搬送
室３と冷却室２との間の第３扉３３を閉じるこの時点で
は、冷却室２内は、成長温度、成長圧力に調整され、Ａ
ｓＨ3 ガスを流しておく。As shown in FIGS. 4 (c) and 4 (d), the first
The third door 33 between the transfer chamber 3 and the cooling chamber 2 is opened, and the susceptor 11 is transferred together with the substrate W to the susceptor support plate of the cooling chamber 2 using the robot arm of the first transfer chamber 3 and the first transfer is performed. At this time, the third door 33 between the chamber 3 and the cooling chamber 2 is closed, and the inside of the cooling chamber 2 is adjusted to the growth temperature and the growth pressure.
sH 3 gas is allowed to flow.
【００４６】図４(e) に示すように、第１搬送室３から
冷却室２への搬送が終了すると、冷却室２のヒータが切
れて冷却室２の温度を下げる。基板表面温度が４００℃
以下になるとＡｓＨ3 ガスの供給を止め、冷却室２内の
真空引き窒素置換し、大気圧に戻す。同時に、第１搬送
室３と待機室５との間の第２扉３２が開かれて、既に成
長温度、成長圧力に設定された待機室５内に待機させて
おいた次の成長用基板Ｗを載せたサセプタ１１が、第１
搬送室３のロボットアームを用いて第１搬送室３に搬送
される。As shown in FIG. 4E, when the transfer from the first transfer chamber 3 to the cooling chamber 2 is completed, the heater of the cooling chamber 2 is turned off to lower the temperature of the cooling chamber 2. The substrate surface temperature is 400 ° C
When the temperature becomes below, supply of the AsH 3 gas is stopped, and the inside of the cooling chamber 2 is evacuated and replaced with nitrogen to return to the atmospheric pressure. At the same time, the second door 32 between the first transfer chamber 3 and the standby chamber 5 is opened, and the next growth substrate W which has been waiting in the standby chamber 5 already set at the growth temperature and the growth pressure is set. The susceptor 11 carrying the
The wafer is transferred to the first transfer chamber 3 using the robot arm of the transfer chamber 3.
【００４７】図４(f) 、(g) に示すように、第１搬送室
３と待機室５との間の第２扉３２を閉じた後、第１搬送
室３と反応室１との間の第１扉３１を開いて、第１搬送
室３のロボットアームによりサセプタ１１をウェーハＷ
ごと第１搬送室３から反応室１に搬送する。第１搬送室
３と反応室１との間の第１扉３１を閉じた後、基板Ｗの
エピタキシャル成長を行う。この成長用基板Ｗが反応室
１内で基板成長が行われるのは、先行する成長後の基板
Ｗとサセプタ１１を冷却室２で冷却している間である。
同時に待機室５と第２搬送室４との間の第２二重扉３
６、３７を開けて、待機室５を冷却し、真空引き窒素置
換を行い、大気圧に戻しておく。更に続く成長用基板Ｗ
を載せたサセプタ１１を待機室５に搬送するためであ
る。As shown in FIGS. 4F and 4G, after closing the second door 32 between the first transfer chamber 3 and the standby chamber 5, the first transfer chamber 3 and the reaction chamber 1 are closed. The first door 31 is opened, and the susceptor 11 is moved by the robot arm of the first transfer chamber 3 to the wafer W.
Are transferred from the first transfer chamber 3 to the reaction chamber 1. After closing the first door 31 between the first transfer chamber 3 and the reaction chamber 1, epitaxial growth of the substrate W is performed. The growth of the growth substrate W in the reaction chamber 1 is performed while the substrate W and the susceptor 11 after the preceding growth are cooled in the cooling chamber 2.
At the same time, the second double door 3 between the standby chamber 5 and the second transfer chamber 4
After opening 6, 37, the standby chamber 5 is cooled, evacuated and replaced with nitrogen, and returned to atmospheric pressure. Subsequent growth substrate W
Is transported to the waiting room 5 with the susceptor 11 on which is mounted.
【００４８】一方、冷却室２が大気圧に戻ると、冷却室
２と第２搬送室４との間の第１二重扉３４、３５の内、
冷却室２側の扉３４が開く。また、扉３２と扉３５との
間にあるＡｓＨ3 センサが反応しなかった場合のみ、基
板Ｗがサセプタ１１ごと冷却された後、第２搬送室４側
の扉３５が開き、第２搬送室４内のロボットアームを用
いてサセプタ１１を冷却室２から第２搬送室４に搬送す
る。第２搬送室４内にもＡｓＨ3 センサが付いている。On the other hand, when the cooling chamber 2 returns to the atmospheric pressure, the first double doors 34 and 35 between the cooling chamber 2 and the second transfer chamber 4
The door 34 on the cooling chamber 2 side opens. Only when the AsH 3 sensor between the door 32 and the door 35 does not react, after the substrate W is cooled together with the susceptor 11, the door 35 on the second transfer chamber 4 side is opened, and the second transfer chamber 4 is opened. The susceptor 11 is transferred from the cooling chamber 2 to the second transfer chamber 4 by using the robot arm in 4. An AsH 3 sensor is also provided in the second transfer chamber 4.
【００４９】図４(h) 、(i) に示すように、第２搬送室
４へのサセプタ１１の搬送が終了すると、冷却室２と第
２搬送室４との間の二重扉３４、３５が閉じる。また待
機室５と第２搬送室４との間の二重扉３６、３７も閉じ
る。冷却室２から第２搬送室４に搬送されたサセプタ１
１から基板Ｗを取り外し、パスボックス６に基板Ｗを移
す。この時、同時に次の成長用基板Ｗを第２搬送室４に
挿入してサセプタ１１に装着する。As shown in FIGS. 4H and 4I, when the transfer of the susceptor 11 to the second transfer chamber 4 is completed, the double door 34 between the cooling chamber 2 and the second transfer chamber 4 35 closes. Further, the double doors 36 and 37 between the standby chamber 5 and the second transfer chamber 4 are also closed. Susceptor 1 transferred from cooling chamber 2 to second transfer chamber 4
The substrate W is removed from 1 and the substrate W is moved to the pass box 6. At this time, the next growth substrate W is simultaneously inserted into the second transfer chamber 4 and mounted on the susceptor 11.
【００５０】図４(j) 、(k) に示すように、サセプタ１
１への成長用基板Ｗの装着が終了すると、第２搬送室４
と待機室５との間の第２二重扉３６、３７の内、第２搬
送室４側の扉３６が開く。このとき、扉３６と扉３７と
の間にあるＡｓＨ3 センサが反応しなかった場合のみ、
第２搬送室４側の扉３７が開き、第２搬送室４内のロボ
ットアームを用いてサセプタ１１を基板Ｗごと待機室５
に搬送する。この時点で、待機室５は、常温、常圧、及
び窒素雰囲気である。As shown in FIGS. 4 (j) and (k), the susceptor 1
1 is completed, the second transfer chamber 4
Of the second double doors 36 and 37 between the first transfer chamber 4 and the standby chamber 5, the door 36 on the second transfer chamber 4 side opens. At this time, only when the AsH 3 sensor between the door 36 and the door 37 did not react,
The door 37 on the second transfer chamber 4 side is opened, and the susceptor 11 is moved together with the substrate W into the standby chamber 5 using the robot arm in the second transfer chamber 4.
Transport to At this point, the standby chamber 5 is at normal temperature, normal pressure, and a nitrogen atmosphere.
【００５１】図４(l) に示すように、サセプタ１１の待
機室５への搬送が終了すると、第２搬送室４と待機室５
との間の第２二重扉３６、３７が閉じ、待機室５内を成
長温度、成長圧力となるよう加熱及び減圧を行う。基板
表面温度が４００℃以上になると、待機室５内にＡｓＨ
3 ガスが流れる。その後、成長の終了した基板Ｗをサセ
プタ１１ごと反応室１から第１搬送室３に取り出す図４
(a) の動作に戻る。As shown in FIG. 4 (l), when the transfer of the susceptor 11 to the standby chamber 5 is completed, the second transfer chamber 4 and the standby chamber 5
The second double doors 36 and 37 are closed, and the inside of the standby chamber 5 is heated and depressurized so as to be at the growth temperature and the growth pressure. When the substrate surface temperature becomes 400 ° C. or higher, AsH
3 gas flows. Thereafter, the substrate W after the growth is taken out of the reaction chamber 1 together with the susceptor 11 into the first transfer chamber 3 in FIG.
Return to the operation of (a).
【００５２】上述した全動作において、反応室１内は、
常時、成長温度、成長圧力を保ち、昇温、降温や、減
圧、降圧調整は、行わない。In all the above-described operations, the inside of the reaction chamber 1 is
At all times, the growth temperature and the growth pressure are maintained, and the temperature is not raised or lowered, or the pressure is not reduced or reduced.
【００５３】上記したように実施の形態は、反応室１で
サセプタ１１にセットした未処理基板Ｗをエピタキシャ
ル成長させている間、待機室５には次の未処理基板Ｗが
サセプタ１１ごと待機させる。反応室１での未処理基板
Ｗ上へのエピタキシャル成長が終了すると、第１搬送室
３のロボットアーム９により処理基板Ｗを反応室１から
サセプタ１１ごと冷却室２に搬送する。冷却室２への搬
送後、待機室５で待機させていた次の未処理基板Ｗを、
第１搬送室３のロボットアーム９によりサセプタ１１ご
と反応室１へ搬送する。冷却室２で処理基板Ｗをサセプ
タ１１ごと冷却している間、反応室１でサセプタ１１に
セットした未処理基板Ｗをエピタキシャル成長させる。
冷却室２での処理基板Ｗの冷却が終了すると、第２搬送
室４のロボットアーム９により処理基板Ｗをサセプタ１
１から外してパスボックス６へ搬送し、パスボックス６
にある次の未処理基板Ｗを、先程処理基板Ｗを外したサ
セプタ１１にセットしてサセプタ１１ごと待機室５に搬
送し、上記工程を繰り返すようにしたものである。した
がって、反応室１での基板のエピタキシャル成長を切れ
目なく行うことができる。As described above, in the embodiment, while the unprocessed substrate W set on the susceptor 11 is epitaxially grown in the reaction chamber 1, the next unprocessed substrate W is made to stand by together with the susceptor 11 in the standby chamber 5. When the epitaxial growth on the unprocessed substrate W in the reaction chamber 1 is completed, the processing substrate W is transferred from the reaction chamber 1 to the cooling chamber 2 together with the susceptor 11 by the robot arm 9 of the first transfer chamber 3. After the transfer to the cooling chamber 2, the next unprocessed substrate W that has been waiting in the standby chamber 5 is
The susceptor 11 and the susceptor 11 are transferred to the reaction chamber 1 by the robot arm 9 in the first transfer chamber 3. While the processing substrate W is cooled together with the susceptor 11 in the cooling chamber 2, the unprocessed substrate W set on the susceptor 11 is epitaxially grown in the reaction chamber 1.
When the cooling of the processing substrate W in the cooling chamber 2 is completed, the processing substrate W is transferred to the susceptor 1 by the robot arm 9 in the second transfer chamber 4.
1 and transported to pass box 6, pass box 6
The next unprocessed substrate W is set on the susceptor 11 from which the processed substrate W has been removed, and is transported together with the susceptor 11 to the standby chamber 5 to repeat the above steps. Therefore, the epitaxial growth of the substrate in the reaction chamber 1 can be performed without interruption.
【００５４】なお、上記実施形態では、冷却室２を左手
前に待機室５を右奥にしてサセプタの動線１３を反時計
回りとしたが、図５に示すように、冷却室２と待機室５
の位置を入れ替えて、サセプタの動線１３を時計回りに
してもよい。In the above embodiment, the susceptor flow line 13 is turned counterclockwise with the cooling chamber 2 leftward and the standby chamber 5 rightward. However, as shown in FIG. Room 5
, The flow line 13 of the susceptor may be turned clockwise.
【００５５】また、気層エピタキシャル成長装置とし
て、反応室内に基板を下向きにセットして、水平に原料
ガスを流す横型気相エピタキシャル成長装置の場合につ
いて説明したが、本発明はこれに限定されない。例え
ば、基板を上向きにセットする横型気相エピタキシャル
成長装置でも、あるいは基板を上向きにセットして垂直
に原料ガスを吹き付ける縦型気相エピタキシャル成長装
置などにも適用できる。また、基板原料やエピタキシャ
ル層原料はＧａＡｓに限定されない。Further, as the vapor phase epitaxial growth apparatus, a horizontal vapor phase epitaxial growth apparatus in which a substrate is set downward in a reaction chamber and a raw material gas flows horizontally has been described, but the present invention is not limited to this. For example, the present invention can be applied to a horizontal vapor phase epitaxial growth apparatus in which a substrate is set upward, or a vertical vapor phase epitaxial growth apparatus in which a substrate is set upward and a source gas is blown vertically. Further, the substrate material and the epitaxial layer material are not limited to GaAs.
【００５６】[0056]
【発明の効果】本発明の方法によれば、エピタキシャル
基板を連続成長でき、生産性を高めることができる。According to the method of the present invention, the epitaxial substrate can be continuously grown, and the productivity can be improved.
【００５７】本発明の装置によれば、反応室とパスボッ
クスとの間に２つのパスを設けるという構造によって、
上記効果を適切に得ることができる。According to the apparatus of the present invention, by providing two paths between the reaction chamber and the pass box,
The above effects can be obtained appropriately.
【００５８】また、本発明の装置によれば、２つの搬送
室と２つのサセプタを用いる複数型の構成とし、搬送室
に温度コントロール機能、圧力コントロール機能、更
に、ＡｓＨ3 ガスを流せる機能を持たせ、また、反応室
内を常時、基板成長温度、及び基板成長圧力に保持した
状態とし、反応室内の昇温、降温や、減圧、昇圧の時間
と、基板のサセプタへのセットに要する時間を省き、反
応室内での基板のエピタキシャル成長を切れ目なく行う
ことができる。従って、成長用基板のパスボックスへの
搬入から複数の搬送室を経て反応室内での基板のエピタ
キシャル成長が行われ、その後の成長用基板を搬送室を
介して第２搬送室４から取り出すまでのデッドタイムを
大幅に短縮することができ、生産性を大幅に向上でき
る。Further, according to the apparatus of the present invention, the apparatus has a plurality of types using two transfer chambers and two susceptors, and has a temperature control function, a pressure control function, and a function of flowing AsH 3 gas into the transfer chamber. In addition, the reaction chamber is always kept at the substrate growth temperature and the substrate growth pressure, and the time required for raising and lowering the temperature, reducing the pressure, and increasing the pressure in the reaction chamber and the time required for setting the substrate on the susceptor are omitted. In addition, epitaxial growth of a substrate in a reaction chamber can be performed without interruption. Therefore, the epitaxial growth of the substrate in the reaction chamber is performed through the plurality of transfer chambers from the transfer of the growth substrate into the pass box, and the dead time until the subsequent growth substrate is removed from the second transfer chamber 4 through the transfer chamber. Time can be greatly reduced, and productivity can be greatly improved.
【図１】ＭＯＶＰＥ法を用いた実施形態による横型気層
エピタキシャル成長装置の概略構成図であり、(a) は斜
視図、(b) は平面図。FIG. 1 is a schematic configuration diagram of a lateral gaseous layer epitaxial growth apparatus according to an embodiment using the MOVPE method, in which (a) is a perspective view and (b) is a plan view.
【図２】サセプタの支持構造を示す断面図であり、(a)
はターンテーブルによる回転支持、(b) はサセプタ支持
板による固定支持の説明図。FIG. 2 is a sectional view showing a susceptor support structure, and FIG.
FIG. 3B is an explanatory view of a rotation support by a turntable, and FIG.
【図３】円形のサセプタをリング形状のアームに載せた
実施形態の説明図であり、(a)は平面図、(b) はｂ−ｂ
断面図。3A and 3B are explanatory views of an embodiment in which a circular susceptor is mounted on a ring-shaped arm, where FIG. 3A is a plan view and FIG. 3B is bb
Sectional view.
【図４】実施形態の動作説明図。FIG. 4 is a diagram illustrating the operation of the embodiment.
【図５】冷却室と待機室を交換した実施形態による横型
気層エピタキシャル成長装置の概略平面図。FIG. 5 is a schematic plan view of a horizontal gaseous-layer epitaxial growth apparatus according to an embodiment in which a cooling chamber and a standby chamber are exchanged.
【図６】従来の横型気層エピタキシャル成長装置の概略
構成図であり、(a) は斜視図、(b) は平面図。FIG. 6 is a schematic configuration diagram of a conventional horizontal gaseous layer epitaxial growth apparatus, where (a) is a perspective view and (b) is a plan view.
１ 反応管 ２ 冷却室 ３ 第１搬送室 ４ 第２搬送室 ５ 待機室 ６ パスボックス ９ ロボットアーム ３１、３２、３３ 扉 ３４，３５、３６，３７ 二重扉 １３ サセプタの動線 DESCRIPTION OF SYMBOLS 1 Reaction tube 2 Cooling room 3 1st transfer room 4 2nd transfer room 5 Standby room 6 Pass box 9 Robot arm 31, 32, 33 Door 34, 35, 36, 37 Double door 13 Susceptor flow line
Claims (4)
板を反応室に搬送し、反応室でエピタキシャル成長し、
エピタキシャル成長した処理基板をパスボックスに搬送
してパスボックスから外部に搬出する気相エピタキシャ
ル成長方法において、反応室とパスボックスとの間に２
つのパスを備え、(1) 反応室で未処理基板を成長中に外
部からパスボックスに搬入した次の未処理基板を第１の
パス中に待機させ、(2) 成長後、処理基板を第２のパス
を使って反応室からパスボックスに搬送する過程で、第
１のパス中に待機させておいた次の未処理基板を反応室
に搬送し、その後、(1) と(2) の工程を繰り返すことを
特徴とする気相エピタキシャル成長方法。An unprocessed substrate carried into a pass box from the outside is transported to a reaction chamber and epitaxially grown in the reaction chamber.
In a vapor phase epitaxial growth method in which a processed substrate that has been epitaxially grown is transported to a pass box and carried out of the pass box to the outside, in the vapor phase epitaxial growth method, two substrates are placed between the reaction chamber and the pass box.
(1) While the unprocessed substrate is growing in the reaction chamber, the next unprocessed substrate brought into the pass box from outside is made to stand by in the first pass, (2) After the growth, the processed substrate is In the process of transferring from the reaction chamber to the pass box using the second pass, the next unprocessed substrate that has been waiting during the first pass is transferred to the reaction chamber, and then the steps (1) and (2) are performed. A vapor phase epitaxial growth method characterized by repeating the steps.
板を反応室に搬送し、反応室でエピタキシャル成長し、
エピタキシャル成長した処理基板をパスボックスに搬送
してパスボックスから外部に搬出する気相エピタキシャ
ル成長装置において、反応室とパスボックスとの間に、
反応室に通じる第１搬送室とパスボックスに通じる第２
搬送室とを設け、第２搬送室から待機室を経て第１搬送
室に至る第１のパスと、第１搬送室から冷却室を経て第
２搬送室に至る第２のパスとを設けたことを特徴とする
気相エピタキシャル成長装置。2. An unprocessed substrate carried into a pass box from outside is transported to a reaction chamber, and epitaxially grown in the reaction chamber.
In a vapor phase epitaxial growth apparatus that transports a processed substrate that has been epitaxially grown to a pass box and carries it out of the pass box, between the reaction chamber and the pass box,
The first transport chamber leading to the reaction chamber and the second transport chamber leading to the pass box
A first path from the second transfer chamber to the first transfer chamber via the standby chamber; and a second path from the first transfer chamber to the second transfer chamber via the cooling chamber. A vapor phase epitaxial growth apparatus characterized by the above-mentioned.
力に減圧した後、原料ガスを流し、反応室にサセプタご
と搬送された未処理基板上にエピタキシャル層を成長さ
せる気相エピタキシャル成長装置において、上記反応室
で第１サセプタにセットした未処理基板をエピタキシャ
ル成長させている間、次の未処理基板を第２サセプタご
と待機させる待機室と、待機室と反応室との間に設けら
れ、第１搬送用ロボットアームを有し、そのロボットア
ームにより反応室でエピタキシャル成長を終了した処理
基板を第１サセプタごと冷却室に搬送する一方、待機室
で待機する次の未処理基板を第２サセプタごと反応室へ
搬送する第１搬送室と、第１搬送室に連結され、第１搬
送室のロボットアームにより反応室から搬送された処理
基板を第１サセプタごと冷却する冷却室と、冷却室と待
機室との間に設けられ、第２搬送用ロボットアームを有
し、そのロボットアームにより冷却室で冷却を終了した
処理基板を第１サセプタから外してパスボックスへ搬送
する一方、パスボックスから次の未処理基板を第１サセ
プタにセットして第１サセプタごと待機室に搬送する第
２搬送室と、第２搬送室に連結され、外部に対して基板
を搬入・搬出するパスボックスとを備えた気相エピタキ
シャル成長装置。3. A vapor phase epitaxial growth apparatus for heating a reaction chamber to a substrate growth temperature, reducing the pressure to a substrate growth pressure, flowing a source gas, and growing an epitaxial layer on an unprocessed substrate transported together with a susceptor to the reaction chamber. A standby chamber for waiting the next unprocessed substrate together with the second susceptor while the unprocessed substrate set on the first susceptor is epitaxially grown in the reaction chamber, and a second chamber provided between the standby chamber and the reaction chamber; One transfer robot arm is used to transfer the processed substrate, which has completed epitaxial growth in the reaction chamber, to the cooling chamber together with the first susceptor by the robot arm, while reacting the next unprocessed substrate waiting in the standby chamber together with the second susceptor. A first transfer chamber for transferring the substrate to the first transfer chamber; and a first susceptor connected to the first transfer chamber, the processing substrate being transferred from the reaction chamber by the robot arm of the first transfer chamber. A second transfer robot arm provided between the cooling chamber and the standby chamber for cooling each of the cooling substrates, and the processing substrate having been cooled in the cooling chamber by the robot arm is removed from the first susceptor and passed through the first susceptor. A second transfer chamber for setting the next unprocessed substrate from the pass box to the first susceptor and transferring the first susceptor together with the first susceptor from the pass box to the standby chamber; And a pass box for loading and unloading.
装置において、第１搬送室は、成長温度、成長圧力に保
持して、少なくとも第１搬送室に第１または第２サセプ
タのいずれかがあるときはＡｓＨ3 ガスを流し続ける機
能有し、冷却室は、第１搬送室と冷却室との間で第１ま
たは第２サセプタのいずれかを搬送するときには、成長
圧力、成長温度付近、ＡｓＨ3 雰囲気に設定でき、冷却
室と第２搬送室の間で搬送を行うときは、大気圧、常
温、窒素雰囲気に設定できる機能を有し、待機室は、待
機室と第１搬送室との間で第１または第２サセプタのい
ずれかを搬送するときには、成長圧力、成長温度付近、
ＡｓＨ3 雰囲気に設定でき、第２搬送室と待機室の間で
搬送を行うときは、大気圧、常温、窒素雰囲気に設定で
きる機能を有し、かつ反応室と第１搬送室との間に第１
扉を、第１搬送室と待機室との間に第２扉を、第１搬送
室と冷却室との間に第３扉を、冷却室と第２搬送室との
間に第１二重扉を、待機室と第２搬送室との間に第２二
重扉をそれぞれ設けた気相エピタキシャル成長装置。4. The vapor phase epitaxial growth apparatus according to claim 3, wherein the first transfer chamber is maintained at a growth temperature and a growth pressure, and at least one of the first and second susceptors is provided in the first transfer chamber. In some cases, the cooling chamber has a function of continuously flowing AsH 3 gas, and when transferring either the first or the second susceptor between the first transfer chamber and the cooling chamber, the cooling chamber has a growth pressure, a growth temperature vicinity, an AsH 3 gas vicinity. Atmospheric pressure, room temperature, and a nitrogen atmosphere can be set when transferring between the cooling chamber and the second transfer chamber. The standby chamber is located between the standby chamber and the first transfer chamber. When transporting either the first or second susceptor at the growth pressure, near the growth temperature,
AsH 3 atmosphere can be set, and when transferring between the second transfer chamber and the standby chamber, it has a function of setting it to atmospheric pressure, normal temperature and nitrogen atmosphere, and between the reaction chamber and the first transfer chamber. First
A second door between the first transfer chamber and the standby chamber, a third door between the first transfer chamber and the cooling chamber, and a first double door between the cooling chamber and the second transfer chamber. A vapor phase epitaxial growth apparatus wherein a door is provided with a second double door between the standby chamber and the second transfer chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18116397A JPH1129392A (en) | 1997-07-07 | 1997-07-07 | Gas phase epitaxial growth and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18116397A JPH1129392A (en) | 1997-07-07 | 1997-07-07 | Gas phase epitaxial growth and device therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1129392A true JPH1129392A (en) | 1999-02-02 |
Family
ID=16095996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18116397A Pending JPH1129392A (en) | 1997-07-07 | 1997-07-07 | Gas phase epitaxial growth and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1129392A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004200678A (en) * | 2002-12-05 | 2004-07-15 | Tokyo Electron Ltd | Removable semiconductor wafer susceptor |
| JP2008262967A (en) * | 2007-04-10 | 2008-10-30 | Taiyo Nippon Sanso Corp | Vapor phase deposition method, and apparatus using the same |
| JP2009194067A (en) * | 2008-02-13 | 2009-08-27 | Dainippon Screen Mfg Co Ltd | Substrate treatment apparatus |
| WO2010118640A1 (en) * | 2009-04-17 | 2010-10-21 | 南安市三晶阳光电力有限公司 | Method and apparatus for preparing thin films using continuous liquid phase epitaxy |
| US10157768B2 (en) | 2016-09-26 | 2018-12-18 | Nuflare Technology, Inc. | Substrate processing apparatus, transfer method, and susceptor |
| CN114502780A (en) * | 2019-10-03 | 2022-05-13 | 洛佩诗公司 | Processing apparatus with transfer chamber and epitaxial reactor |
-
1997
- 1997-07-07 JP JP18116397A patent/JPH1129392A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004200678A (en) * | 2002-12-05 | 2004-07-15 | Tokyo Electron Ltd | Removable semiconductor wafer susceptor |
| JP4637475B2 (en) * | 2002-12-05 | 2011-02-23 | 東京エレクトロン株式会社 | Semiconductor substrate transfer system using removable susceptor, and semiconductor substrate transfer method |
| JP2008262967A (en) * | 2007-04-10 | 2008-10-30 | Taiyo Nippon Sanso Corp | Vapor phase deposition method, and apparatus using the same |
| JP2009194067A (en) * | 2008-02-13 | 2009-08-27 | Dainippon Screen Mfg Co Ltd | Substrate treatment apparatus |
| WO2010118640A1 (en) * | 2009-04-17 | 2010-10-21 | 南安市三晶阳光电力有限公司 | Method and apparatus for preparing thin films using continuous liquid phase epitaxy |
| US10157768B2 (en) | 2016-09-26 | 2018-12-18 | Nuflare Technology, Inc. | Substrate processing apparatus, transfer method, and susceptor |
| CN114502780A (en) * | 2019-10-03 | 2022-05-13 | 洛佩诗公司 | Processing apparatus with transfer chamber and epitaxial reactor |
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