JP2010098247A - Substrate processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To easily obtain the remaining time until processing of the last substrate is completed after starting processing of the first substrate among a plurality of substrates. <P>SOLUTION: A substrate processing device includes: a calculation means for calculating the remaining times from when the processing is started for the first substrate among the plurality of substrates till when the processing is completed for the last substrate among the plurality of substrate; and a display means for displaying the remaining time calculated by the calculation means, wherein the remaining time is re-calculated by the calculation means and displayed on the display means when any of completion of conveyance of the substrates, completion of restoration of atmospheric pressure in a front chamber, completion of pressure reduction in the front chamber, and completion of processing of the substrates in a processing chamber is detected. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus that sequentially conveys and processes a plurality of substrates.

  A conventional substrate processing apparatus that performs one step of a method of manufacturing a semiconductor device such as a DRAM or an IC includes an atmospheric transfer chamber, a front chamber configured to be able to communicate with one side of the atmospheric transfer chamber and to be capable of adjusting pressure. A plurality of substrate processing modules each provided with a processing chamber configured to communicate with the front chamber, a substrate storage unit connected to the other side of the atmospheric transfer chamber to hold a plurality of substrates, a front chamber and a substrate storage unit And a second substrate transport apparatus that is provided in the front chamber and transports the substrate between the front chamber and the processing chamber. Such a substrate processing apparatus transfers a substrate to be processed from a substrate storage unit to a processing chamber via an atmospheric transfer chamber and a front chamber, and after performing a predetermined process such as film formation in the processing chamber, A series of processes for transporting the substrate to the substrate storage unit via the front chamber and the atmospheric transfer chamber is automatically performed on each of the plurality of substrates.

  In the conventional substrate processing apparatus, the remaining time of the substrate processing in the processing chamber is displayed on a monitor device or the like. However, since the monitor device of the conventional substrate processing apparatus is configured to indicate the remaining time for each of the plurality of substrates, the operator can check the progress status of all the plurality of substrates from the monitor device. It was difficult to grasp. That is, it is difficult for the operator to grasp from the monitor device the remaining time from the start of the processing of the first substrate among the plurality of substrates until the processing of the last substrate is completed.

  Accordingly, an object of the present invention is to provide a substrate processing apparatus in which it is easy to grasp the remaining time from the start of processing of the first substrate among a plurality of substrates until the processing of the last substrate is completed. .

According to an aspect of the present invention, the substrate processing module is connected in parallel to the atmospheric transfer chamber and one side of the atmospheric transfer chamber, and can communicate with the one side of the atmospheric transfer chamber and be adjustable in pressure. A plurality of substrate processing modules each having a configured front chamber and a processing chamber configured to be able to communicate with the front chamber, and a substrate storage that holds a plurality of substrates connected to the other side of the atmospheric transfer chamber , A first substrate transfer device that is provided in the atmospheric transfer chamber and transfers a substrate between the front chamber and the substrate storage unit, and a plurality of the front chambers and the processing chamber that are respectively provided in the front chambers A second substrate transport device for transporting a substrate between the first substrate transport device, a transport operation by the first substrate transport device and the second substrate transport device, a pressure adjusting operation in the front chamber, and a substrate processing operation in the processing chamber. Control means for controlling, The control means starts the transfer of the substrate to be processed by the first substrate transfer apparatus from the substrate accommodating portion to the atmospheric transfer chamber, and starts the return to atmospheric pressure in the front chamber; When the completion of loading of the substrate into the atmospheric transfer chamber and the completion of return to atmospheric pressure in the front chamber are detected, the first chamber from the atmospheric transfer chamber to the front chamber is communicated with the atmospheric transfer chamber and the front chamber. When the second step of starting the transfer of the substrate by the substrate transfer apparatus and the completion of the transfer of the substrate into the front chamber are detected, the atmospheric transfer chamber and the front chamber are shut off to reduce the pressure in the front chamber. And when the completion of decompression in the front chamber is detected, the substrate is communicated between the front chamber and the processing chamber and is transferred from the front chamber to the processing chamber by the second substrate transfer apparatus. The first to start transporting And when the completion of the transfer of the substrate into the processing chamber is detected, the front chamber and the processing chamber are shut off and the processing of the substrate in the processing chamber is started. When the completion of the processing of the substrate in the room is detected, the processing chamber and the front chamber communicate with each other, and transfer of the substrate after processing by the second substrate transfer device from the processing chamber to the front chamber is started. And a seventh step of shutting off the processing chamber and the front chamber and starting a return to atmospheric pressure in the front chamber upon detecting completion of transport of the substrate into the front chamber, When the completion of return to atmospheric pressure in the front chamber is detected, the front chamber and the atmospheric transfer chamber communicate with each other, and the first substrate transfer apparatus starts the transfer of the substrate from the front chamber to the atmospheric transfer chamber. Step 8 and before entering the atmospheric transfer chamber When the completion of the transfer of the substrate is detected, the front chamber and the atmospheric transfer chamber are shut off, and the transfer of the substrate by the first substrate transfer device from the atmospheric transfer chamber to the substrate accommodating portion is started. And the step is repeated for each of the plurality of substrates, and the execution of the first step is started for the first substrate among the plurality of substrates, and then the steps of the plurality of substrates are performed. A transfer unit that calculates a remaining time until the execution of the ninth step is completed for the last substrate, and a display unit that displays the remaining time calculated by the calculation unit. Upon detecting any one of completion, completion of return to atmospheric pressure in the front chamber, completion of decompression in the front chamber, and completion of processing of the substrate in the processing chamber, the plurality of sheets are detected after detecting the completion. Provided is a substrate processing apparatus that causes the calculation means to recalculate the remaining time until the execution of the ninth step is completed for the last substrate of the board, and displays the recalculated remaining time on the display means. The

  According to the substrate processing apparatus of the present invention, it becomes easy to grasp the remaining time from the start of processing of the first substrate among the plurality of substrates until the processing of the last substrate is completed.

  Below, the structure of the substrate processing apparatus which concerns on one Embodiment of this invention is demonstrated, referring FIGS. 1-4. FIG. 1 is a schematic configuration diagram of an inline-type substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a block diagram of the control means provided in the substrate processing apparatus according to one embodiment of the present invention. FIG. 3 is a schematic configuration diagram of a process chamber provided in the substrate processing apparatus according to the embodiment of the present invention. FIG. 4 is a flowchart of a substrate processing process performed in the substrate processing apparatus according to the embodiment of the present invention.

<Process chamber configuration>
The substrate processing apparatus according to this embodiment includes a plurality of process chambers (processing furnaces) for processing a substrate. First, before describing the configuration of the substrate processing apparatus according to the present embodiment, the configuration of the process chamber will be described in advance with reference to FIG.

  FIG. 3 is a schematic configuration diagram of the process chambers PM1 and PM2 provided in the substrate processing apparatus according to the embodiment of the present invention. The process chambers PM1 and PM2 use, for example, a modified magnetron type plasma source that generates high-density plasma by an electric field and a magnetic field, and plasma processing for plasma processing of a wafer W as a substrate made of silicon or the like. It is configured as a furnace (MMT apparatus).

  As shown in FIG. 3, the process chambers PM1 and PM2 include a processing vessel 203, a susceptor 217, a gate valve 244, a shower head 236, a gas exhaust port 235, and plasma generating means.

The processing container 203 includes a dome-shaped upper container 210 that is a first container and a bowl-shaped lower container 211 that is a second container. Then, the processing chamber 201 for processing the wafer W is formed by covering the upper container 210 on the lower container 211. The upper container 210 is formed of a non-metallic material such as aluminum oxide or quartz, and the lower container 21
1 is formed of aluminum.

  A susceptor 217 serving as a substrate holding unit that holds the wafer W is disposed at the bottom center of the processing chamber 201. The susceptor 217 is made of, for example, a non-metallic material such as aluminum nitride, ceramics, or quartz so that metal contamination of a film formed on the wafer W can be reduced. A heater (not shown) as a heating means is integrally embedded in the susceptor 217 so that the wafer W can be heated. When power is supplied to the heater, the surface of the wafer W can be heated to about 600 ° C. to 900 ° C., for example. The susceptor 217 is electrically insulated from the lower container 211. The susceptor 217 is equipped with a second electrode (not shown) as an electrode for changing impedance. The second electrode is grounded via an impedance variable mechanism 274. The impedance variable mechanism 274 is composed of a coil and a variable capacitor. By controlling the number of coil patterns and the capacitance value of the variable capacitor, the impedance variable mechanism 274 is formed on the wafer W via the second electrode (not shown) and the susceptor 217. The potential can be controlled. The susceptor 217 is provided with a susceptor elevating mechanism 268 for elevating the susceptor 217. The susceptor 217 is provided with a through hole 217a. On the bottom surface of the lower container 211, at least three wafer push-up pins 266 for pushing up the wafer W are provided. The wafer push-up pin 266 is configured to penetrate the through-hole 217a in a non-contact state with the susceptor 217 when the susceptor 217 is lowered by the susceptor lifting mechanism 268.

  A gate valve 244 serving as a gate valve is provided on the side wall of the lower container 211. When the gate valve 244 is open, the wafer W can be loaded into the processing chamber 201 using the transfer means (not shown in the drawing) or can be carried out of the processing chamber 201. . By closing the gate valve 244, the inside of the processing chamber 201 can be hermetically closed.

A shower head 236 for supplying gas to the processing chamber 201 is provided on the upper portion of the processing chamber 201. The shower head 236 includes a cap-shaped lid 233, a gas inlet 234, a buffer chamber 237, an opening 238, a shower rate 240, and a gas outlet 239. Various gases such as a reaction gas (for example, an oxygen (O) -containing gas, a nitrogen (N) -containing gas) and an inert gas (for example, N ₂ gas or He gas) are entered into the buffer chamber 237 through the gas inlet 234. A gas supply pipe 232 to be supplied is connected. The buffer chamber 237 functions as a dispersion space for dispersing the various gases 230 introduced from the gas introduction port 234.

  A gas exhaust port 235 for exhausting gas from inside the processing chamber 201 is provided on the side wall of the lower container 211. A gas exhaust pipe 231 for exhausting gas is connected to the gas exhaust port 235. The gas exhaust pipe 231 is connected to a vacuum pump 246 that is an exhaust device via an APC 242 that is a pressure regulator and a valve 243b that is an on-off valve.

A cylindrical electrode 215 as a first electrode is provided on the outer periphery of the processing vessel 203 (upper vessel 210) so as to surround the plasma generation region 224 in the processing chamber 201. The cylindrical electrode 215 is formed in a cylindrical shape, for example, a cylindrical shape. The cylindrical electrode 215 is connected to a high-frequency power source 273 that applies high-frequency power via a matching unit 272 for impedance matching. The cylindrical electrode 215 functions as a discharge unit that plasma-excites the reaction gas supplied to the processing chamber 201. An upper magnet 216a and a lower magnet 216b are attached to upper and lower ends of the outer surface of the cylindrical electrode 215, respectively. The upper magnet 216a and the lower magnet 216b are each configured as a permanent magnet formed in a cylindrical shape, for example, a ring shape. The upper magnet 216a and the lower magnet 216b have magnetic poles at both ends (that is, the inner peripheral end and the outer peripheral end) along the radial direction of the processing chamber 201. The direction of the magnetic poles of the upper magnet 216a and the lower magnet 216b is arranged to be reversed. In other words, the magnetic poles on the inner periphery of the upper magnet 216a and the lower magnet 216b are different polarities. Thereby, magnetic field lines in the cylindrical axis direction are formed along the inner surface of the cylindrical electrode 215. The plasma generating means is mainly configured by the cylindrical electrode 215, the upper magnet 216a, the lower magnet 216b, the matching unit 272, and the high-frequency power source 273. In addition, the electromagnetic field is effectively shielded around the cylindrical electrode 215, the upper magnet 216a, and the lower magnet 216b so that the electromagnetic field formed by these does not adversely affect the external environment or other processing furnaces. A metal shielding plate 223 is provided.

  After introducing the reaction gas into the processing chamber 201, a magnetron discharge is generated in the processing chamber 201 by an electric field formed by supplying high-frequency power to the cylindrical electrode 215 and a magnetic field formed by the upper magnet 216a and the lower magnet 216b. Plasma is generated. At this time, the above-mentioned electromagnetic field orbits the emitted electrons, thereby increasing the ionization rate of the plasma and generating a long-life high-density plasma.

  The process module controllers PMC1 and PMC2 as control means include the APC 242, the valve 243b, and the vacuum pump 246 through the signal line A, the susceptor lifting mechanism 268 through the signal line B, the gate valve 244 through the signal line C, and the signal line. The matching unit 272 and the high-frequency power source 273 are controlled through D, the mass flow controller 241 and the valve 243a are controlled through the signal line E, and the heater and the impedance variable mechanism 274 embedded in the susceptor are further controlled through the signal line (not shown). Has been.

  Next, a method of processing the surface of the wafer W or the surface of the thin film formed on the wafer W with plasma using the process chambers PM1 and PM2 will be described.

  First, the wafer W to be processed is loaded into the processing chamber 201 and placed on the susceptor 217. Specifically, the susceptor 217 is lowered, and the tip of the wafer push-up pin 266 is projected from the surface of the susceptor 217 by a predetermined height. Then, the gate valve 244 provided in the lower container 211 is opened, and the wafer W is placed on the wafer push-up pins 266. Then, the gate valve 244 is closed, the susceptor 217 is raised by the susceptor lifting mechanism 268, the wafer W is transferred onto the upper surface of the susceptor 217, and the wafer W is further raised to a predetermined processing position (height). The transfer of the wafer W into the processing chamber 201 will be described later.

  The heater embedded in the susceptor 217 is preheated, and heats the loaded wafer W to a processing temperature within a range of room temperature to 500 ° C. While operating the vacuum pump 246, the opening of the APC 242 is adjusted to maintain the pressure in the processing chamber 201 within the range of 0.1 to 100 Pa.

  When the temperature of the wafer W reaches the processing temperature, the reaction gas is directed toward the upper surface (processing surface) of the wafer W disposed in the processing chamber 201 via the gas inlet 234 and the gas ejection holes 234a of the shower plate 240. Is introduced into the shower. At the same time, high frequency power is applied from the high frequency power source 273 to the cylindrical electrode 215 via the matching unit 272. At this time, the impedance variable mechanism 274 is controlled in advance to a desired impedance value.

  Magnetron discharge plasma (high-density plasma) is generated in the processing chamber 201 by an electric field formed by supplying high-frequency power to the cylindrical electrode 215 and a magnetic field formed by the upper magnet 216a and the lower magnet 216b. Then, the surface of the wafer W on the susceptor 217 is subjected to plasma processing by the generated high density plasma. The wafer W that has been subjected to the surface treatment is transferred out of the processing chamber 201 using a transfer means (not shown) in the reverse order of substrate loading.

The operation of each part of the process chambers PM1 and PM2 described above is configured to be controlled by the process module controllers PMC1 and PMC2, respectively. The process module controllers PMC1 and PMC2 turn on / off the high frequency power supply 273, adjust the matching unit 272, open / close the valve 243a, flow rate of the mass flow controller 241, valve opening of the APC 242, open / close of the valve 243b, vacuum pump 246 , And the susceptor elevating mechanism 268 up and down, opening and closing of the gate valve 244, and power ON / OFF to the high frequency power source for applying high frequency power to the heater embedded in the susceptor are controlled.

<Configuration of substrate processing apparatus>
Next, the configuration of the substrate processing apparatus according to the present embodiment including the process chambers PM1 and PM2 described above will be described with reference to FIGS. The substrate processing apparatus is divided into a vacuum side and an atmosphere side.

  Two substrate processing modules MD1 and MD2 are provided in parallel on the vacuum side. The substrate processing module MD1 includes the process chamber PM1 described above and a vacuum lock chamber VL1 configured as a front chamber configured to be pressure adjustable. The vacuum lock chamber VL1 is provided in front of the process chamber PM1 when viewed from the atmospheric transfer chamber described later. The process chamber PM1 (inside the processing chamber 201) and the vacuum lock chamber VL1 (in the front chamber) are configured to be able to communicate with each other by a gate valve G1. The substrate processing module MD2 includes the above-described process chamber PM2 and a vacuum lock chamber VL2 configured as a front chamber configured to be pressure adjustable. The vacuum lock chamber VL2 is provided in front of the process chamber PM2 when viewed from the atmospheric transfer chamber described later. The process chamber PM2 (inside the processing chamber 201) and the vacuum lock chamber VL2 (in the front chamber) are configured to be able to communicate with each other by a gate valve G2.

  In the vacuum lock chamber VL1 (front chamber), for example, an upper buffer stage LS1 and a lower cooling stage CS1 are provided as multistage stages configured to hold the wafer W. The upper buffer stage LS1 is configured to hold the wafer W to be processed, and the lower cooling stage CS1 is configured to hold and cool the processed wafer W. Further, in the vacuum lock chamber VL2 (front chamber), for example, an upper buffer stage LS2 and a lower cooling stage CS2 are provided as multistage stages configured to hold the wafer W. The upper buffer stage LS2 holds the wafer W to be processed, and the lower cooling stage CS2 holds and cools the processed wafer W.

  A vacuum robot VR1 as a second substrate transfer device is provided in the vacuum lock chamber VL1 (in the front chamber). The vacuum robot VR1 is configured to be able to transfer the wafer W between the process chamber PM1 (inside the processing chamber 201) and the vacuum lock chamber VL1 (on the buffer stage LS1 or the cooling stage CS1 in the front chamber). Has been. In addition, a vacuum robot VR2 as a second substrate transfer device is provided in the vacuum lock chamber VL2 (in the front chamber). The vacuum robot VR2 is configured to be able to transfer the wafer W between the process chamber PM2 (in the processing chamber 201) and the vacuum lock chamber VL2 (on the buffer stage LS2 or the cooling stage CS2 in the front chamber). Has been.

On the atmospheric side, an atmospheric loader LM connected as the above-described vacuum lock chambers VL1 and VL2 and configured as an atmospheric transfer chamber, and two load ports as substrate storage units connected to the other side of the atmospheric loader LM LP1 and LP2 are provided. The atmosphere loader LM (atmosphere transfer chamber) and the vacuum lock chamber VL1 (front chamber) can communicate with each other by a load door G3 (gate valve). The atmosphere loader LM (atmosphere transfer chamber) and the vacuum lock chamber VL2 (front chamber) can communicate with each other by a load door G5 (gate valve). The load ports LP1 and LP2 are configured so that the carriers CR1 and CR2 that can hold a plurality of wafers W can be delivered to an external transfer device (not shown).

  In the atmospheric loader LM (inside the atmospheric transfer chamber), one atmospheric robot AR as a first substrate transfer device is provided. The atmospheric robot AR is configured to be able to transfer the wafer W between the vacuum lock chambers VL1 and VL2 (front chamber) and the carriers CR1 and CR2 placed on the load ports LP1 and LP2. ing. The atmospheric loader LM is provided with an aligner unit AU as a substrate position correcting device. The aligner unit AU is configured so as to be able to correct the deviation of the wafer W during transfer or to perform notch alignment (alignment) that aligns the notch of the wafer W in a certain direction.

<Configuration of control means>
Next, the configuration of the control means CNT that controls the operation of the above-described substrate processing apparatus will be described with reference to FIG.

  The control controller includes an overall control controller 90, process module controllers PMC 1 and PMC 2, and an operation unit 100. The operation unit 100, the overall control controller 90, and the process module controllers PMC1 and PMC2 are connected by a LAN line 80.

  The overall controller 90 controls the operation of the entire system, the transfer operation of the wafer W by the vacuum robots VR1, VR2 and the atmospheric robot AR, the opening / closing operation of the gate valves G1, G2 and the load doors G3, G4, and the vacuum lock chambers VL1, VL2. It is configured to control the pressure adjustment operation and the like.

  The overall control controller 90 transfers the wafer W into the vacuum lock chambers VL1 and VL2, the transfer into the process chambers PM1 and PM2, and the transfer onto the load ports LP1 and LP2 (in the carriers CR1 and CR2). This is configured to control the transfer operation of the wafer W by the vacuum robots VR1 and VR2 and the atmospheric robot AR.

  As a means for detecting that the wafer W has been transferred into the vacuum lock chambers VL1 and VL2, a sensor for detecting that the wafer W has been placed on the substrate placement portion of the vacuum robots VR1 and VR2 and the atmospheric robot AR (FIG. And a sensor (not shown) for detecting that the substrate mounting portions of the vacuum robots VR1 and VR2 and the atmospheric robot AR are in the vacuum lock chambers VL1 and VL2, and the vacuum robots VR1 and VR2 and the vacuum lock Provided in the chambers VL1 and VL2, respectively. A sensor for detecting that the wafer W is placed on the stage provided in the vacuum lock chambers VL1 and VL2 may be provided in the vacuum lock chambers VL1 and VL2.

Further, as means for detecting that the wafer W has been transferred into the process chambers PM1 and PM2, a sensor (not shown) for detecting that the wafer W has been placed on the substrate placement portion of the vacuum robots VR1 and VR2. And sensors (not shown) for detecting that the substrate placement portions of the vacuum robots VR1 and VR2 are in the vacuum lock chambers VL1 and VL2 are provided in the vacuum robots VR1 and VR2 and the process chambers PM1 and PM2, respectively. It has been. A sensor for detecting that the wafer W is placed on the wafer push-up pins 266 provided in the process chambers PM1 and PM2 may be provided in the process chambers PM1 and PM2.

  Further, as means for detecting that the wafer W has been transferred onto the load ports LP1 and LP2 (inside the carriers CR1 and CR2), a sensor for detecting that the wafer W has been placed on the substrate placement portion of the atmospheric robot AR. (Not shown) and sensors (not shown) for detecting that the substrate mounting portion of the atmospheric robot AR is in the vacuum lock chambers VL1 and VL2 are provided in the atmospheric robot AR and the load ports LP1 and LP2, respectively. It has been. A sensor (not shown) for detecting that the wafer W is stored in a slot provided on the load ports LP1 and LP2 (inside the carriers CR1 and CR2) may be provided on the load ports LP1 and LP2. .

  The process chambers PM1 and PM2 are configured to control the operation of each part of the process chambers PM1 and PM2. For example, the process module controllers PMC1 and PMC2 supply / stop operation of the high frequency power supply 273, adjustment operation of the matching unit 272, start / stop operation of gas supply from the gas supply pipe 232 and flow rate adjustment operation, and valve opening adjustment of the APC 242 Control the operation, opening / closing operation of the valve 243b, starting / stopping operation of the vacuum pump 246, lifting / lowering operation of the susceptor lifting / lowering mechanism 268, opening / closing operation of the gate valve 244, energization operation to the heater embedded in the susceptor, etc. It is configured.

  The operation unit 100 accepts system control command input from a key input device (not shown), displays the progress of substrate processing, logging data, and alarms on a monitor device (not shown), and sets screens for alarm analysis, parameter editing, etc. Is displayed on the monitor device.

<Basic substrate processing operation>
Subsequently, a substrate processing operation by the above-described substrate processing apparatus will be described. In the substrate processing apparatus according to the present embodiment, when a plurality of wafers W to be processed are loaded onto the load ports LP1 and LP2, step 1 to step 8 described later are defined as one cycle, and this cycle is defined as a plurality of wafers W. It is configured to repeat every time. Such an operation is controlled by the control means CNT described above.

  Step 1 is configured to start the transfer of the wafer W to be processed by the atmospheric robot AR from the load ports LP1 and LP2 into the atmospheric loader LM and to start the return to atmospheric pressure in the vacuum lock chambers VL1 and VL2. ing.

  In step 2, when it is detected that the loading of the wafer W into the atmospheric loader LM and the return to atmospheric pressure in the vacuum lock chambers VL1 and VL2 are completed, the atmospheric loader LM and the vacuum lock chambers VL1 and VL2 are communicated with each other. The wafer W is started to be transferred from the inside to the vacuum lock chambers VL1 and VL2 by the atmospheric robot AR.

  In step 3, when it is detected that the transfer of the wafer W into the vacuum lock chambers VL1 and VL2 is completed, the atmospheric loader LM and the vacuum lock chambers VL1 and VL2 are shut off to start depressurization in the vacuum lock chambers VL1 and VL2. It is configured.

  In step 4, when the completion of decompression in the vacuum lock chambers VL1 and VL2 is detected, the vacuum lock chambers VL1 and VL2 communicate with the inside of the process chambers PM1 and PM2 (inside the processing chamber 201) from the inside of the vacuum lock chambers VL1 and VL2. The wafers W are started to be transferred into the process chambers PM1 and PM2 (inside the processing chamber 201) by the vacuum robots VR1 and VR2.

  In step 5, when it is detected that the transfer of the wafer W into the process chambers PM1, PM2 (in the processing chamber 201) is detected, the vacuum lock chambers VL1, VL2 and the process chambers PM1, PM2 (in the processing chamber 201) are shut off. The processing of the wafer W in the process chambers PM1 and PM2 (in the processing chamber 201) is started.

  In step 6, when it is detected that the processing of the wafer W in the process chambers PM1 and PM2 (in the processing chamber 201) is completed, the process chambers PM1 and PM2 (in the processing chamber 201) communicate with the vacuum lock chambers VL1 and VL2. The wafer W after processing by the vacuum robots VR1 and VR2 from the process chambers PM1 and PM2 (inside the processing chamber 201) to the vacuum lock chambers VL1 and VL2 is started.

  In step 7, when it is detected that the transfer of the wafer W into the vacuum lock chambers VL1 and VL2 is completed, the process chambers PM1 and PM2 (processing chamber 201) and the vacuum lock chambers VL1 and VL2 are shut off and the vacuum lock chambers VL1 and VL2 are disconnected. It is configured to start the return to atmospheric pressure.

  In step 8, when it is detected that atmospheric pressure return in the vacuum lock chambers VL1 and VL2 is completed, the vacuum robot AR from the vacuum lock chambers VL1 and VL2 to the atmospheric loader LM is communicated with the vacuum lock chambers VL1 and VL2. Is configured to start the transfer of the wafer W.

  In step 9, when the completion of the transfer of the wafer W into the atmospheric loader LM is detected, the vacuum lock chambers VL1, VL2 and the atmospheric loader LM are shut off and the wafer from the atmospheric loader LM to the load ports LP1, LP2 by the atmospheric robot AR. It is comprised so that conveyance of W may be started.

  Steps 1 to 8 are defined as one cycle, and this cycle is repeated for each of a plurality of wafers W.

<Substrate processing operation using sorting operation>
When two substrate processing modules (PM1 + VL1, PM2 + VL2) are provided as in this embodiment, a plurality of wafers W stored in one carrier (for example, carrier CR1) are converted into two substrate processing modules MD1, MD2. There are a sorting operation in which processing is performed alternately and a parallel operation in which the carriers CR1 and CR2 and the process chambers PM1 and PM2 are paired. These general operation control methods are as follows.

(Distribution operation)
The distribution operation is mainly used when the same substrate processing (for example, film formation of the same film type) is performed. FIG. 8 is an explanatory view showing the distribution operation performed in the substrate processing apparatus according to one embodiment of the present invention. The distribution operation is intended to perform substrate processing such as film formation under the same conditions in the two substrate processing modules MD1 and MD2, and is stored in the carrier CR1 so that the wafer transfer route is indicated by reference numerals L1 and L2. The wafer W being processed may be processed in either one of the process chambers PM1 and PM2. When the fixed operation is used in which the two substrate processing modules MD1 (PM1 + VL1) and MD2 (PM2 + VL2) are alternately used without adopting the distribution operation, one of the two lines (MD1, MD2) waits for the temperature setting value. When a delay occurs due to waiting until the process conditions are satisfied, it becomes difficult to efficiently process the wafer W. On the other hand, when the distribution operation is adopted, the processed wafer W is placed on the cooling stage (cooling stage CS1 or cooling stage CS2) of one of the vacuum lock chambers VL1 and VL2.
Can be determined that the corresponding substrate processing module (the substrate processing module MD1 or the substrate processing module MD2) has been vacant, and the wafer W is preferentially distributed and transferred to the vacant line. As a result, the wafer W can be processed efficiently.

(Parallel operation)
The parallel operation is mainly used when performing different substrate processing (film formation of different film types, etc.). FIG. 9 is an explanatory diagram showing parallel operation performed by the substrate processing apparatus according to the embodiment of the present invention. Wafer transfer routes in parallel operation are denoted by reference numerals L1 and L2. In parallel operation, all the wafers W in the carrier CR1 are transferred and processed only in one of the process chambers PM1 and PM2 (for example, only the process chamber PM1), and all the wafers in the carrier CR2 are processed. W is transferred to only one of the other designated chambers of process chambers PM1 and PM2 (for example, only process chamber PM2) and processed. Note that the processing by the process chambers PM1 and PM2 can be performed in parallel.

  Hereinafter, the specific operation of the distribution operation will be specifically described with reference to FIG. In the following description, Evac means decompression processing in the vacuum lock chambers VL1 and VL2, Vent means atmospheric pressure return processing in the vacuum lock chambers VL1 and VL2, and wafer #n means a plurality of wafers This means the n-th wafer W of the wafers.

  (1) The unprocessed wafer # 1 is taken out from the load port LP1 by the atmospheric robot AR and loaded into the atmospheric loader LM. After alignment is performed by the arm of the atmospheric robot AR, the wafer # 1 is further transported from the atmospheric loader LM to the front of the vacuum lock chamber VL1 by the atmospheric robot AR, and is loaded into the vacuum lock chamber VL1 (arrow m1). ). The loaded unprocessed wafer # 1 is placed on a buffer stage LS1 as an upper unprocessed substrate mounting portion. The load door G3 is closed, and the vacuum lock chamber VL1 is evacuated (Evac1). During this time, the unprocessed wafer # 2 is taken out from the load port LP1 by the atmospheric robot AR, loaded into the atmospheric loader LM, and alignment is performed by the aligner unit AU. The gate valve G1 is opened, and the unprocessed wafer # 1 is loaded into the process chamber PM1 from the upper buffer stage LS1 of the vacuum lock chamber VL1 by the vacuum robot VR1 (a). Close the gate valve G1. The film forming process for the unprocessed wafer # 1 is started in advance in the process chamber PM1 (# 1: process).

  (2) The unprocessed wafer # 2 is taken out from the load port LP1 by the atmospheric robot AR and loaded into the atmospheric loader LM. Alignment is performed by the aligner unit AU by the preceding operation by the arm of the atmospheric robot AR. The unprocessed wafer # 2 that has been aligned is carried to the front of the vacuum lock chamber VL2 by the atmospheric robot AR, and is carried into the vacuum lock chamber VL2 (arrow m2). The loaded unprocessed wafer # 2 is placed on the upper buffer stage LS2. The load door G4 is closed and the vacuum lock chamber VL2 is evacuated (Evac2). The gate valve G2 is opened, and the unprocessed wafer # 2 is loaded into the process chamber PM2 from the upper buffer stage LS2 of the vacuum lock chamber VL2 by the vacuum robot VR2 (b). Close the gate valve G2. The film forming process for the unprocessed wafer # 2 is started in the process chamber PM2 (# 2: process).

(3) The unprocessed wafer # 3 is taken out from the load port LP1 by the atmospheric robot AR and loaded into the atmospheric loader LM. Alignment is performed by the aligner unit AU by the preceding operation by the arm of the atmospheric robot AR. The unprocessed wafer # 3 subjected to the alignment is carried to the front of the vacuum lock chamber VL1 by the atmospheric robot AR. Before opening the loading door G3, introducing an inert gas _{N 2,} the inside of the vacuum lock chamber VL1 to atmospheric pressure (Vent1). Simultaneously with the completion of Vent1 in the vacuum lock chamber VL1, the load door G3 is opened, and the unprocessed wafer # 3 is loaded into the vacuum lock chamber VL1 (arrow m3). The loaded unprocessed wafer # 3 is placed on the upper buffer stage LS1. The load door G3 is closed, and the vacuum lock chamber VL1 is evacuated (Evac3).

(4) The unprocessed wafer # 4 is taken out from the load port LP1 by the atmospheric robot AR and loaded into the atmospheric loader LM. Alignment is performed by the aligner unit AU by the preceding operation by the arm of the atmospheric robot AR. The unprocessed wafer # 4 subjected to the alignment is carried to the front of the vacuum lock chamber VL2 by the atmospheric robot AR. Before opening the loading door G4, introducing an inert gas _{N 2,} the inside of the vacuum lock chamber VL2 at atmospheric pressure (Vent2). Simultaneously with the completion of Vent2, the load door G4 is opened, and the unprocessed wafer # 4 is loaded into the vacuum lock chamber VL2 (arrow m4). The loaded unprocessed wafer # 4 is placed on the upper buffer stage LS2. The load door G4 is closed, and the vacuum lock chamber VL2 is evacuated (Evac4).

  (5) When the film forming process for wafer # 1 in the process chamber PM1 started in advance is completed, the gate valve G1 of the process chamber PM1 is immediately opened, and the vacuum robot VR1 has processed the vacuum lock chamber VL1 from the process chamber PM1. Wafer # 1 is unloaded (c). The unloaded processed wafer # 1 is placed on the lower cooling stage CS1 of the vacuum lock chamber VL1 and cooled. By mounting on the cooling stage CS1, the overall controller 90 detects that the processed wafer # 1 has been transferred into the vacuum lock chamber VL1.

  (6) The unprocessed wafer # 3 is carried into the process chamber PM1 from the upper buffer stage LS1 of the vacuum lock chamber VL1 by the vacuum robot VR1 (d). Close the gate valve G1. The film forming process for the unprocessed wafer # 3 is started in the process chamber PM1 (# 3: process).

  (7) Upon detecting that the processed wafer # 1 has been transferred into the vacuum lock chamber VL1, the overall controller 90 takes out the unprocessed wafer # 5 from the load port LP1 by the atmospheric robot AR, and within the atmospheric loader LM Carry in. Alignment is performed by the aligner unit AU by the preceding operation by the arm of the atmospheric robot AR. The unprocessed wafer # 5 subjected to the alignment is carried to the front of the vacuum lock chamber VL1 by the atmospheric robot AR.

Moreover, the overall controller 90 detects that the treated wafer # 1 is transported into the vacuum lock chamber VL1, before opening the loading door G3, introducing an inert gas N _2, vacuum lock chamber VL1 The inside is brought to an atmospheric pressure state (Vent3). Simultaneously with the completion of Vent3 in the vacuum lock chamber VL1, the load door G3 is opened, and the unprocessed wafer # 5 is loaded into the vacuum lock chamber VL1 (arrow m5). The loaded unprocessed wafer # 5 is placed on the upper buffer stage LS1. At this stage, the unprocessed wafer # 5 is placed on the upper buffer stage LS1 of the vacuum lock chamber VL1, and the processed wafer # 1 is placed on the lower cooling stage CS1.

(8) During this time, when the film forming process for wafer # 2 in the process chamber PM2 started later is completed, the gate valve G2 is immediately opened, and the vacuum robot VR2 has already processed the vacuum lock chamber VL2 from the process chamber PM2. Unload wafer # 2 (e)
. The unloaded processed wafer # 2 is placed on the lower cooling stage CS2 of the vacuum lock chamber VL2 and cooled. By mounting on the cooling stage CS2, the overall controller 90 detects that the processed wafer # 2 has been transferred into the vacuum lock chamber VL2.

  (9) The unprocessed wafer # 4 is loaded into the process chamber PM2 from the upper buffer stage LS2 of the vacuum lock chamber VL2 by the vacuum robot VR2 (f). Close the gate valve G2. The film forming process for the unprocessed wafer # 4 is started in the process chamber PM2 (# 4: process).

  (10) Thereafter, the cooled wafer # 1 on the cooling stage CS1 of the vacuum lock chamber VL1 is taken out by the atmospheric robot AR and carried out to the load port LP1 (M1 (# 1 payout)). The load door G3 is closed and the vacuum lock chamber VL1 is evacuated (Evac5).

(11) When the overall controller 90 detects that the processed wafer # 2 has been transferred into the vacuum lock chamber VL2, the general robot 90 takes out the unprocessed wafer # 6 from the load port LP1 by the atmospheric robot AR and stores it in the atmospheric loader LM. Carry in. After performing the alignment by the preceding operation with the arm of the atmospheric robot AR, the wafer # 6 is further carried to the front of the vacuum lock chamber VL2 by the atmospheric robot AR. Moreover, the overall controller 90 detects that the treated wafer # 2 is conveyed into the vacuum lock chamber VL2, before opening the loading door G4, introducing an inert gas N _2, vacuum lock chamber VL2 The inside is brought to atmospheric pressure (Vent4). Simultaneously with the completion of Vent4 in the vacuum lock chamber VL2, the load door G4 is opened, and the unprocessed wafer # 6 is placed in the vacuum lock chamber VL2 (arrow m6). The loaded unprocessed wafer # 6 is placed on the upper buffer stage LS2. At this stage, the unprocessed wafer # 6 is placed on the upper buffer stage LS1 of the vacuum lock chamber VL2, and the processed wafer # 2 is placed on the lower cooling stage CS1.

  (12) Thereafter, the cooled wafer # 2 on the cooling stage CS2 is unloaded to the load port LP1 by the arm of the atmospheric robot AR (M2 (# 2 payout)). Further, the load door G4 is closed, and the vacuum lock chamber VL2 is evacuated (Evac6).

  (13) When the film forming process for wafer # 3 in the process chamber PM1 is completed, the gate valve G1 is immediately opened, and the processed wafer # 3 is unloaded from the process chamber PM1 into the vacuum lock chamber VL1 by the vacuum robot VR1. (G). The processed wafer # 3 that has been unloaded is placed on the lower cooling stage CS1 of the vacuum lock chamber VL1 and cooled. By mounting on the cooling stage CS1, the overall controller 90 detects that the processed wafer # 3 has been transferred to the vacuum lock chamber VL1.

  (14) The unprocessed wafer # 5 is loaded into the process chamber PM1 from the upper buffer stage LS1 of the vacuum lock chamber VL1 by the vacuum robot VR1 (h). Close the gate valve G1. The film forming process for the unprocessed wafer # 5 is started in the process chamber PM1 (# 5: process).

(15) When the overall controller 90 detects that the processed wafer # 3 has been transferred into the vacuum lock chamber VL1, the general robot 90 takes out the unprocessed wafer # 7 from the load port LP1 by the atmospheric robot AR, and Carry it into the LM. Alignment is performed by the aligner unit AU by the preceding operation by the arm of the atmospheric robot AR. The unprocessed wafer # 7 subjected to alignment is carried from the atmospheric loader LM to the front of the vacuum lock chamber VL1 by the atmospheric robot AR. Before opening the loading door G3, introducing an inert gas _{N 2,} the inside of the vacuum lock chamber VL1 to atmospheric pressure (Vent5). Simultaneously with the completion of Vent5, the load door G3 is opened, and the unprocessed wafer # 7 is loaded into the vacuum lock chamber VL1 (arrow m7). The loaded unprocessed wafer # 7 is placed on the upper buffer stage LS1. At this stage, the unprocessed wafer # 7 is placed on the upper buffer stage LS1 of the vacuum lock chamber VL1, and the processed wafer # 3 is placed on the lower cooling stage CS1.
(16) Thereafter, the cooled wafer # 3 on the cooling stage CS2 is unloaded into the load port LP1 by the arm of the atmospheric robot AR (M3 (# 3 payout)).

  (17) During this time, when the film forming process for wafer # 4 in the process chamber PM2 is completed, the gate valve G2 is immediately opened, and the processed wafer # 4 is processed from the process chamber PM2 into the vacuum lock chamber VL2 by the vacuum robot VR2. (I). The processed wafer # 4 that has been unloaded is placed on the lower cooling stage CS2 of the vacuum lock chamber VL2 and cooled. By mounting on the cooling stage CS2, the overall controller 90 detects that the processed wafer # 4 has been transferred into the vacuum lock chamber VL1.

  (18) The unprocessed wafer # 6 is loaded into the process chamber PM2 from the upper buffer stage LS2 of the vacuum lock chamber VL2 by the vacuum robot VR2 (j). Close the gate valve G2. The film forming process for the unprocessed wafer # 6 is started in the process chamber PM2 (# 6: process).

(19) Upon detecting that the processed wafer # 4 has been transferred into the vacuum lock chamber VL1, the overall controller 90 takes out the unprocessed wafer # 8 from the load port LP1 by the atmospheric robot AR, and within the atmospheric loader LM Carry in. After performing alignment with the arm of the atmospheric robot AR, the wafer # 8 is further carried by the atmospheric robot AR to the front of the vacuum lock chamber VL2. Moreover, the overall controller 90 detects that the treated wafer # 4 is conveyed to the vacuum lock chamber VL1, before opening the loading door G4, introducing an inert gas N _2, the vacuum lock chamber VL2 To atmospheric pressure (Vent6). Simultaneously with the completion of Vent6, the load door G4 is opened, and the unprocessed wafer # 8 is placed in the vacuum lock chamber VL2 (arrow m8). The loaded unprocessed wafer # 8 is placed on the upper buffer stage LS2. At this stage, the unprocessed wafer # 8 is placed on the upper buffer stage LS1 of the vacuum lock chamber VL2, and the processed wafer # 4 is placed on the lower cooling stage CS1.

  (20) During this time, the load door G3 is closed and the vacuum lock chamber VL1 is evacuated (Evac7).

  (21) Thereafter, the cooled wafer # 4 on the cooling stage CS2 is unloaded into the load port LP1 by the arm of the atmospheric robot AR (M4 (# 4 payout)). Further, the load door G4 is closed and the vacuum lock chamber VL2 is evacuated (Evac8).

  In this way, the process in the process chamber PM1 and the process in the process chamber PM2 are alternately repeated.

<Display remaining time>
The substrate processing apparatus according to this embodiment starts executing the first step for the first wafer W among the plurality of wafers W when performing the above-described substrate processing (including distribution operation and parallel operation). After that, the remaining time until the execution of the ninth step is completed for the last wafer W among the plurality of wafers W is displayed. The remaining time display function of the substrate processing apparatus according to the present embodiment will be described below.

  The control means CNT completes the execution of the ninth step for the last wafer W of the plurality of wafers W after starting the execution of the first step for the first wafer W of the plurality of wafers W. Calculating means for calculating the remaining time until and a display means for displaying the remaining time calculated by the calculating means. The calculation unit and the display unit are realized in the operation unit 100 or the overall control controller 90.

  Specifically, the control unit CNT includes a storage unit that is stored in advance so that the estimated required time of each step from the first step to the ninth step can be read. When the first step is started for the first wafer W among the plurality of wafers W, the calculating means starts the first step and then the ninth step for the last wafer W among the plurality of wafers W. The estimated required time of all the steps executed until the execution of is completed is read from the storage unit and the remaining time (scheduled required time) is calculated.

  For example, the required transfer time (scheduled time) from the load ports LP1 and LP2 to the atmospheric loader LM is Ta (sec), the required transfer time (scheduled time) from the atmospheric loader LM to the process chambers PM1 and PM2 is Tb (sec), The required transfer time (scheduled time) from the process chambers PM1 and PM2 to the cooling stage CS in the vacuum lock chambers VL1 and VL2 is Tc (sec), from the cooling stage CS in the vacuum lock chambers VL1 and VL2 to the load ports LP1 and LP2. The required time (scheduled time) for transport is Td (sec), the time required for depressurization (scheduled time) for making the vacuum pressure in the vacuum lock chambers VL1, VL2 is Te (sec), and the inside of the vacuum lock chambers VL1, VL2 is at atmospheric pressure The time required to return to atmospheric pressure (scheduled time) is Tf (s c) When the processing time (scheduled time) in the process chambers PM1 and PM2 is Tg (sec), and the total number of wafers W to be processed is h (sheets), the remaining time (scheduled required time) is as follows: It can be calculated by a calculation formula.

  (Remaining time in distribution operation) = Ta + Te + Tf + Td + (Tb * h) / 2 + Tb + (Tc * h) / 2 + Tc + (Tg * h) / 2 (sec) (Equation 1)

  (Remaining time in parallel operation) = Ta + Te + Tf + Td + Tb * h + Tc * h + Tg * h (sec) (Equation 2)

  The display means is configured to receive the calculated remaining time from the calculation means and display it on a monitor device (not shown) connected to the operation unit 100. Specifically, the display means has a name of the substrate processing (name of job to be automatically operated) and remaining time (for example, hhhh: mm: ss, where hhhh is hours, mm is minutes, ss is seconds). And a message including a pair with the monitor device is received from the calculation means and displayed on the monitor device. FIG. 10 illustrates the data structure of the message.

When displaying on the monitor device, the calculated remaining time (scheduled required time) may be displayed as it is, or as shown in FIG. 7, the estimated end time calculated based on the remaining time may be displayed. It is good. Such display is configured so as to be divided and displayed for each name of the substrate processing (job name that is the target of automatic operation). The scheduled end time is obtained by adding the remaining time (scheduled required time) calculated by the calculating means to the time (start time) when the first step is started for the first wafer W among the plurality of wafers W. Can be calculated. Further, the above message may be configured to be transmitted to a host computer (not shown) via the LAN line 80, and the remaining time or the scheduled end time is displayed by the host computer. Also good.

<Redisplay of remaining time>
The control means CNT is configured to recalculate (update) the above-mentioned remaining time at any time and redisplay the recalculated (updated) remaining time (scheduled required time) on the monitor device.

  That is, the control means CNT completes the transfer of the wafer W, completes the return to atmospheric pressure in the vacuum lock chambers VL1 and VL2, completes the decompression in the vacuum lock chambers VL1 and VL2, and within the process chambers PM1 and PM2 (in the processing chamber 201). If any of the processing completions of the wafer W is detected, the remaining time from the completion of the detection until the completion of the execution of the ninth step for the last substrate of the plurality of wafers W is calculated by the calculation means. The recalculated remaining time after correction is displayed by the display means.

  Such recalculation includes completion of transfer of the wafer W, completion of return to atmospheric pressure in the vacuum lock chambers VL1 and VL2, completion of decompression in the vacuum lock chambers VL1 and VL2, and in the process chambers PM1 and PM2 (in the processing chamber 201). When any of the processing completions of the wafer W is detected, all the steps executed after the completion is detected until the execution of the ninth step is completed for the last wafer W among the plurality of wafers W. The time required is read from the storage unit and is performed. As the calculation formula, Formula 1 and Formula 2 described above can be used. As a result of the configuration described above, the remaining time is recalculated every time one of the first to ninth steps is started (the completion of the step is detected), and the recalculated correction is performed. The remaining remaining time is displayed by the display means. The recalculation is not limited to the above method, and may be performed by further adding a delay time to the remaining time that has already been calculated.

<Effects according to this embodiment>
According to an embodiment of the present invention, one or more of the following effects (a) to (d) are achieved.

(A) The control unit CNT according to this embodiment starts the execution of the first step for the first wafer W among the plurality of wafers W, and then performs the operation for the last wafer W among the plurality of wafers W. Calculation means for calculating the remaining time until execution of step 9 is completed, and display means for displaying the remaining time calculated by the calculation means. Specifically, the control unit CNT includes a storage unit that is stored in advance so that the estimated required time of each step from the first step to the ninth step can be read. Then, when the first step is started for the first wafer W among the plurality of wafers W, the calculating means starts the ninth step for the last wafer W among the plurality of wafers W after starting the first step. The planned required time of all the steps executed until the execution of the steps is completed is read from the storage unit and the remaining time (scheduled required time) is calculated. Further, the display means is configured to receive the calculated remaining time from the calculation means and display it on a monitor device (not shown) connected to the operation unit 100. As a result, it is possible to easily grasp the remaining time from the start of processing of the first wafer W to the completion of processing of the last wafer W among the plurality of wafers W. As a result, it is possible to easily make a substrate processing plan. That is, it becomes easy to make a production plan including processes before and after the substrate processing based on the remaining time information, and it is possible to smoothly prepare devices and materials used in the preceding and following processes. In addition, since the remaining time can be easily grasped, it is not necessary for the operator to wait and continue monitoring around the substrate processing apparatus, so that the burden on the operator can be reduced and the free time can be used for the preparation of the preceding and following processes. ,

  For reference, a display example of remaining time in a conventional substrate processing apparatus is shown in FIG. As shown in FIG. 6, in the conventional substrate processing apparatus, the remaining time for each wafer W among the plurality of wafers W to be processed (that is, the remaining time for individual substrate processing in the process chamber) is displayed. Was configured to be. For this reason, it is difficult for the operator to grasp the progress of all the plurality of wafers W from the monitor device. In contrast, according to the substrate processing apparatus of the present embodiment, the execution of the first step is started for the first wafer W among the plurality of wafers W, and then the last wafer among the plurality of wafers W is performed. Since the remaining time until the completion of the execution of the ninth step for W is displayed on the monitor device, it is possible to easily grasp the progress of all the plurality of wafers W.

(B) The control unit CNT according to the present embodiment is the same as the control unit CNT. The control unit CNT completes the transfer of the wafer W, completes the return to the atmospheric pressure in the vacuum lock chambers VL1 and VL2, completes the decompression in the vacuum lock chambers VL1 and VL2, and If any one of the processing completions of the wafers W in the chambers PM1 and PM2 (in the processing chamber 201) is detected, the ninth step is executed for the last substrate of the plurality of wafers W after the completion is detected. The remaining time until the process is completed is recalculated by the calculating means, and the recalculated remaining time is displayed on the display means. That is, every time one of the first step to the ninth step is started (when the completion of the step is detected), the remaining time is recalculated, and the recalculated remaining time after correction is monitored. It is configured to be displayed. As a result, the operator can easily grasp the latest progress regarding all of the plurality of wafers W. For example, even when a delay occurs in the progress of a predetermined step among a plurality of steps, the remaining time is recalculated after completion of the step in which the delay has occurred, and the latest recalculated remaining time is sent to the monitor device. Since it is displayed, the operator can easily grasp the remaining time after correction incorporating the delay time. As a result, it is possible to make a substrate processing plan more easily.

Depending on the type of substrate processing, as shown in FIG. 5, the processing time of the wafer W in the process chambers PM1, PM2 (in the processing chamber 201) may be short. In such a case, the increase / decrease in the transfer time of the wafer W and the increase / decrease in the pressure adjustment time in the vacuum lock chambers VL1, VL2 greatly affect the increase / decrease in the overall substrate processing time. In particular, in a substrate processing process in which the transfer of the wafer W and the pressure adjustment in the vacuum lock chambers VL1 and VL2 are frequently and repeatedly performed, these increases and decreases greatly affect the overall plate processing time. For example, the pressure adjustment in the vacuum lock chambers VL1 and VL2 is performed by adjusting the flow rate of N ₂ gas supplied into the vacuum lock chambers VL1 and VL2, the exhaust amount of the vacuum pump exhausting the vacuum lock chambers VL1 and VL2, and the vacuum lock chamber VL1. , VL2 varies depending on whether there is a leak or the amount of leak. In such a case, if only the remaining time of individual substrate processing in the process chamber is displayed on the monitor device as in the conventional substrate processing apparatus, the increase / decrease of the overall substrate processing time (the progress of the entire substrate processing) can be increased. In addition to being difficult to grasp, the substrate processing end time that was initially anticipated may deviate greatly from the actual end time. In order to match the initially estimated end time of the substrate processing with the actual end time, the remaining time is calculated in advance by taking into account that there is a delay in the transfer of the wafer W and the pressure adjustment in the vacuum lock chambers VL1 and VL2. However, in such a case, the substrate processing time is prolonged regardless of the presence or absence of delay, and the efficiency of the substrate processing is reduced.

In contrast, according to the present embodiment, not only when the processing completion of the wafer W is detected in the process chambers PM1 and PM2 (inside the processing chamber 201), the transfer of the wafer W is completed, the vacuum lock chamber VL1, The remaining time is recalculated each time completion of return to atmospheric pressure in VL2 and completion of decompression in vacuum lock chambers VL1 and VL2 are detected. That is, it is configured such that a delay caused in the transfer of the wafer W and the pressure adjustment in the vacuum lock chambers VL1 and VL2 is incorporated into the remaining time as needed (the remaining time is corrected as needed). as a result,
For example, when the processing time of the wafer W in the process chambers PM1 and PM2 (in the processing chamber 201) is short as shown in FIG. 5, the operator can accurately and easily set the remaining time after correction including the delay time. It becomes possible to grasp.

(C) The control unit CNT according to the present embodiment has the remaining time (scheduled required time) calculated by the calculation unit at the time (start time) when the first step is started for the first wafer W among the plurality of wafers W. ) Is calculated, the scheduled end time for completing the execution of the ninth step is calculated for the last wafer W among the plurality of wafers W, and the start time and the scheduled end time are displayed on the monitor device. It is configured. Therefore, the operator can easily grasp the scheduled end time for all of the plurality of wafers W. On the other hand, since the message to be transmitted to the host computer is configured to include the remaining time as it is, not the scheduled end time, it becomes easy to handle data in the host computer.

(D) As shown in FIG. 7, the control unit CNT according to the present embodiment displays the remaining time or the scheduled end time for each substrate processing name (job name) as shown in FIG. It is configured so as to be displayed separately. Therefore, the operator can easily grasp when each job is completed even when a plurality of jobs are executed in parallel. In addition, when it is not classified and displayed for each substrate processing name (job name), it is possible to grasp the time when the job finally ends by selectively displaying the last job to end among a plurality of jobs. Is preferable.

<Other embodiments>
The control unit CNT (calculation unit) according to the above-described embodiment is configured to complete the transfer of the wafer W, complete the return to atmospheric pressure in the vacuum lock chambers VL1 and VL2, complete the decompression in the vacuum lock chambers VL1 and VL2, and process chambers PM1 and PM1. When any of the processing completion of the wafer W in PM2 (inside the processing chamber 201) is detected, the remaining time is recalculated. However, the present invention is not limited to such a form. For example, the control unit CNT may be configured to periodically recalculate the remaining time at a predetermined cycle interval. With this configuration, the remaining time displayed on the monitor device is periodically updated, and the operator can accurately and easily grasp the remaining time after correction including the delay time. Become. Further, for example, the control means CNT completes the transfer of the wafer W even if a predetermined allowable time is exceeded, completes the return to atmospheric pressure in the vacuum lock chambers VL1 and VL2, completes decompression in the vacuum lock chambers VL1 and VL2, and the process Even if the processing completion of the wafer W in the chambers PM1 and PM2 (in the processing chamber 201) cannot be detected (that is, when a delay in step progress is detected), the remaining time may be recalculated. Good. With this configuration, the remaining time displayed on the monitor device is updated when a delay in step progress is detected, so that the remaining time after correction including the delay time can be accurately and easily grasped. It becomes possible.

  In the above embodiment, the monitor apparatus is configured to display the remaining time and the scheduled end time of the substrate processing, but the present invention is not limited to such a form. That is, as long as it is easy to grasp the scheduled end time, the required scheduled time and the elapsed time may be displayed in pairs, or these may be displayed in a graph.

In the above embodiment, a semiconductor manufacturing apparatus is shown as an example of a substrate processing apparatus. However, the present invention is not limited to a semiconductor manufacturing apparatus, and can be suitably applied to an apparatus for processing a glass substrate such as an LCD apparatus. . Further, the configuration of the process chamber is not limited to the above-described embodiment. That is, the specific content of the substrate processing is not questioned, and it may be processing such as annealing processing, oxidation processing, nitriding processing, and diffusion processing as well as film forming processing. The film formation process may be, for example, a process for forming a CVD, PVD, oxide film, or nitride film, or a process for forming a film containing a metal.
Furthermore, it may be an exposure process performed by photolithography or a coating process of a resist solution or an etching solution.

  Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the paper.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

The first aspect of the present invention is:
An atmospheric transfer chamber;
A substrate processing module connected in parallel to one side of the atmospheric transfer chamber, the front chamber configured to be able to communicate with one side of the atmospheric transfer chamber and capable of adjusting the pressure, and to be able to communicate with the front chamber A plurality of substrate processing modules each having a configured processing chamber;
A substrate storage unit connected to the other side of the atmospheric transfer chamber to hold a plurality of substrates;
A first substrate transfer device provided in the atmospheric transfer chamber for transferring a substrate between the front chamber and the substrate storage;
A second substrate transfer device that is provided in each of the plurality of front chambers and transfers a substrate between the front chamber and the processing chamber;
A control means for controlling a transport operation by the first substrate transport device and the second substrate transport device, a pressure adjusting operation in the front chamber, and a substrate processing operation in the processing chamber,
The control means includes
A first step of starting the transfer of the substrate to be processed by the first substrate transfer apparatus from the substrate accommodating portion to the atmospheric transfer chamber and starting the return to atmospheric pressure in the front chamber;
When the completion of loading of the substrate into the atmospheric transfer chamber and the completion of return to atmospheric pressure in the front chamber are detected, the first chamber from the atmospheric transfer chamber to the front chamber is communicated with the atmospheric transfer chamber and the front chamber. A second step of starting the conveyance of the substrate by the substrate conveyance device;
A third step of shutting off the atmospheric transfer chamber and the front chamber and starting pressure reduction in the front chamber when detecting the completion of transport of the substrate into the front chamber;
When the completion of decompression in the front chamber is detected, a fourth step of starting the transfer of the substrate by the second substrate transfer apparatus from the front chamber to the processing chamber through communication between the front chamber and the processing chamber. When,
A fifth step of shutting off the front chamber and the processing chamber and starting the processing of the substrate in the processing chamber upon detecting the completion of the transfer of the substrate into the processing chamber;
When the completion of the processing of the substrate in the processing chamber is detected, the processing chamber and the front chamber communicate with each other, and the substrate is transferred from the processing chamber to the front chamber after the processing by the second substrate transfer device. A sixth step of starting
A seventh step of shutting off the processing chamber and the front chamber and starting the return to atmospheric pressure in the front chamber upon detecting completion of the transfer of the substrate into the front chamber;
When the completion of return to atmospheric pressure in the front chamber is detected, the front chamber and the atmospheric transfer chamber communicate with each other, and the transfer of the substrate by the first substrate transfer apparatus from the front chamber to the atmospheric transfer chamber is started. An eighth step;
When the completion of the transfer of the substrate into the atmospheric transfer chamber is detected, the front chamber and the atmospheric transfer chamber are shut off and the substrate is transferred from the atmospheric transfer chamber to the substrate container by the first substrate transfer device. A ninth step of starting conveyance;
As one cycle, this cycle is repeated for each of the plurality of substrates,
The remaining time from the start of execution of the first step for the first substrate of the plurality of substrates to the completion of the execution of the ninth step for the last substrate of the plurality of substrates. A calculating means for calculating;
Display means for displaying the remaining time calculated by the calculation means,
Upon detecting any of the substrate transfer completion, the atmospheric pressure return completion in the front chamber, the pressure reduction completion in the front chamber, and the processing completion of the substrate in the processing chamber, the completion is detected, A substrate processing apparatus that causes the calculation means to recalculate the remaining time until the execution of the ninth step is completed for the last substrate among a plurality of substrates, and displays the recalculated remaining time on the display means It is.

Preferably,
The control means includes
A pre-stored storage unit is provided so that the estimated required time of each step from the first step to the ninth step can be read;
The calculating means includes
When the first step is started for the first substrate of the plurality of substrates, the execution of the ninth step is completed for the last substrate of the plurality of substrates after starting the first step The estimated required time for all the steps to be executed is read from the storage unit and the remaining time is calculated.

Preferably,
The calculating means includes
Upon detecting any of the substrate transfer completion, the atmospheric pressure return completion in the front chamber, the pressure reduction completion in the front chamber, and the processing completion of the substrate in the processing chamber, the completion is detected, The estimated required time of all steps executed until the execution of the ninth step is completed for the last substrate among the plurality of substrates is read from the storage unit and the remaining time is recalculated.

Preferably,
Each time the calculation means starts any one of the first step to the ninth step, the calculation means starts the ninth step for the last substrate among the plurality of substrates. The estimated required time of all steps executed until the execution of the steps is completed is read from the storage unit and the remaining time is recalculated.

Preferably,
The control means adds the remaining time calculated or recalculated by the calculating means to the time when the first step is started for the first board among the plurality of boards, and thereby among the plurality of boards. A scheduled end time for completing the execution of the ninth step is calculated for the last substrate, and the calculated scheduled end time is displayed on the display means.

Another aspect of the present invention is:
An atmospheric transfer chamber, a substrate processing module connected in parallel to one side of the atmospheric transfer chamber, a front chamber configured to be able to communicate with the one side of the atmospheric transfer chamber and to adjust pressure, and the front A plurality of substrate processing modules each having a processing chamber configured to communicate with the chamber, a substrate storage unit connected to the other side of the atmospheric transfer chamber to hold a plurality of substrates, and provided in the atmospheric transfer chamber A first substrate transfer device that transfers a substrate between the front chamber and the substrate storage unit; and a first substrate transfer device that is provided in each of the plurality of front chambers and transfers the substrate between the front chamber and the processing chamber. A method of manufacturing a semiconductor device implemented by a substrate processing apparatus comprising:
A first step of starting the transfer of the substrate to be processed by the first substrate transfer apparatus from the substrate accommodating portion to the atmospheric transfer chamber and starting the return to atmospheric pressure in the front chamber;
When the completion of loading of the substrate into the atmospheric transfer chamber and the completion of return to atmospheric pressure in the front chamber are detected, the first chamber from the atmospheric transfer chamber to the front chamber is communicated with the atmospheric transfer chamber and the front chamber. A second step of starting the conveyance of the substrate by the substrate conveyance device;
A third step of shutting off the atmospheric transfer chamber and the front chamber and starting pressure reduction in the front chamber when detecting the completion of transport of the substrate into the front chamber;
When the completion of decompression in the front chamber is detected, a fourth step of starting the transfer of the substrate by the second substrate transfer apparatus from the front chamber to the processing chamber through communication between the front chamber and the processing chamber. When,
A fifth step of shutting off the front chamber and the processing chamber and starting the processing of the substrate in the processing chamber upon detecting the completion of the transfer of the substrate into the processing chamber;
When the completion of the processing of the substrate in the processing chamber is detected, the processing chamber and the front chamber communicate with each other, and the substrate is transferred from the processing chamber to the front chamber after the processing by the second substrate transfer device. A sixth step of starting
A seventh step of shutting off the processing chamber and the front chamber and starting the return to atmospheric pressure in the front chamber upon detecting completion of the transfer of the substrate into the front chamber;
When the completion of return to atmospheric pressure in the front chamber is detected, the front chamber and the atmospheric transfer chamber communicate with each other, and the transfer of the substrate by the first substrate transfer apparatus from the front chamber to the atmospheric transfer chamber is started. An eighth step;
When the completion of the transfer of the substrate into the atmospheric transfer chamber is detected, the front chamber and the atmospheric transfer chamber are shut off and the substrate is transferred from the atmospheric transfer chamber to the substrate container by the first substrate transfer device. A ninth step of starting conveyance;
As one cycle, this cycle is repeated for each of the plurality of substrates,
The remaining time from the start of execution of the first step for the first substrate of the plurality of substrates to the completion of the execution of the ninth step for the last substrate of the plurality of substrates. While calculating and displaying on the display means,
Upon detecting any of the substrate transfer completion, the atmospheric pressure return completion in the front chamber, the pressure reduction completion in the front chamber, and the processing completion of the substrate in the processing chamber, the completion is detected, In the semiconductor device manufacturing method, the remaining time until the execution of the ninth step is completed for the last substrate among a plurality of substrates is recalculated and displayed on the display means.

Preferably,
When the first step is started for the first substrate among the plurality of substrates, the first step is started, and then the ninth step is performed for the last substrate of the plurality of substrates. The total required time of all the steps to be executed until completion is added to calculate the remaining time and display it on the display means.

Preferably,
Upon detecting any of the substrate transfer completion, the atmospheric pressure return completion in the front chamber, the pressure reduction completion in the front chamber, and the processing completion of the substrate in the processing chamber, the completion is detected, The remaining time is recalculated by adding up the estimated required times of all the steps executed until the execution of the ninth step is completed for the last substrate among the plurality of substrates.

Preferably,
Each time one of the first step to the ninth step is started, the execution of the ninth step is completed for the last substrate of the plurality of substrates after starting the step. The remaining time is recalculated by summing up the estimated required time of all the steps to be executed.

Preferably,
By adding the remaining time calculated or recalculated by the calculation means to the time when the first step is started for the first substrate of the plurality of substrates, the last substrate of the plurality of substrates is An estimated end time at which execution of the ninth step is completed is calculated and displayed on the display means.

1 is a schematic configuration diagram of an inline-type substrate processing apparatus according to an embodiment of the present invention. It is a block block diagram of the control means with which the substrate processing apparatus concerning one Embodiment of this invention is provided. It is a schematic block diagram of the process chamber with which the substrate processing apparatus concerning one Embodiment of this invention is provided. It is a flowchart of the substrate processing process implemented with the substrate processing apparatus concerning one Embodiment of this invention. It is a flowchart of a substrate processing process when the processing time in a process chamber is short. In the conventional substrate processing apparatus, it is the schematic which illustrates a mode that the remaining time of the process about each board | substrate is displayed on a monitor apparatus. In the substrate processing apparatus according to an embodiment of the present invention, an example is shown in which a “start time” at which processing of the first substrate is started and “scheduled end time” at which processing of the last substrate is completed are displayed on the monitor device. FIG. It is explanatory drawing of distribution operation implemented with the substrate processing apparatus concerning one Embodiment of this invention. It is explanatory drawing of the parallel operation implemented with the substrate processing apparatus concerning one Embodiment of this invention. It is the schematic which illustrates the data structure of the message containing the pair of the name and remaining time of a board | substrate process.

Explanation of symbols

LM atmospheric loader (atmospheric transfer chamber)
MD1 Substrate processing module MD2 Substrate processing module VL1 Vacuum lock chamber (front chamber)
VL2 vacuum lock chamber (front room)
201 processing chamber LP1 load port (substrate storage)
LP2 load port (board compartment)
AR atmospheric robot (first substrate transfer device)
VR1 vacuum robot (second substrate transfer device)
VR2 vacuum robot (second substrate transfer device)
W Wafer (Substrate)
CNT control means

Claims (1)

An atmospheric transfer chamber;
A substrate processing module connected in parallel to one side of the atmospheric transfer chamber, the front chamber configured to be able to communicate with one side of the atmospheric transfer chamber and capable of adjusting the pressure, and to be able to communicate with the front chamber A plurality of substrate processing modules each having a configured processing chamber;
A substrate storage unit connected to the other side of the atmospheric transfer chamber to hold a plurality of substrates;
A first substrate transfer device provided in the atmospheric transfer chamber for transferring a substrate between the front chamber and the substrate storage;
A second substrate transfer device that is provided in each of the plurality of front chambers and transfers a substrate between the front chamber and the processing chamber;
A control means for controlling a transport operation by the first substrate transport device and the second substrate transport device, a pressure adjusting operation in the front chamber, and a substrate processing operation in the processing chamber,
The control means includes
A first step of starting the transfer of the substrate to be processed by the first substrate transfer apparatus from the substrate accommodating portion to the atmospheric transfer chamber and starting the return to atmospheric pressure in the front chamber;
When the completion of loading of the substrate into the atmospheric transfer chamber and the completion of return to atmospheric pressure in the front chamber are detected, the first chamber from the atmospheric transfer chamber to the front chamber is communicated with the atmospheric transfer chamber and the front chamber. A second step of starting the conveyance of the substrate by the substrate conveyance device;
A third step of shutting off the atmospheric transfer chamber and the front chamber and starting pressure reduction in the front chamber when detecting the completion of transport of the substrate into the front chamber;
When the completion of decompression in the front chamber is detected, a fourth step of starting the transfer of the substrate by the second substrate transfer apparatus from the front chamber to the processing chamber through communication between the front chamber and the processing chamber. When,
A fifth step of shutting off the front chamber and the processing chamber and starting the processing of the substrate in the processing chamber upon detecting the completion of the transfer of the substrate into the processing chamber;
When the completion of the processing of the substrate in the processing chamber is detected, the processing chamber and the front chamber communicate with each other, and the substrate is transferred from the processing chamber to the front chamber after the processing by the second substrate transfer device. A sixth step of starting
A seventh step of shutting off the processing chamber and the front chamber and starting the return to atmospheric pressure in the front chamber upon detecting completion of the transfer of the substrate into the front chamber;
When the completion of return to atmospheric pressure in the front chamber is detected, the front chamber and the atmospheric transfer chamber communicate with each other, and the transfer of the substrate by the first substrate transfer apparatus from the front chamber to the atmospheric transfer chamber is started. An eighth step;
When the completion of the transfer of the substrate into the atmospheric transfer chamber is detected, the front chamber and the atmospheric transfer chamber are shut off and the substrate is transferred from the atmospheric transfer chamber to the substrate container by the first substrate transfer device. A ninth step of starting conveyance;
As one cycle, this cycle is repeated for each of the plurality of substrates,
The remaining time from the start of execution of the first step for the first substrate of the plurality of substrates to the completion of the execution of the ninth step for the last substrate of the plurality of substrates. A calculating means for calculating;
Display means for displaying the remaining time calculated by the calculation means,
Upon detecting any of the substrate transfer completion, the atmospheric pressure return completion in the front chamber, the pressure reduction completion in the front chamber, and the processing completion of the substrate in the processing chamber, the completion is detected, The remaining time until the execution of the ninth step is completed for the last substrate among a plurality of substrates is recalculated by the calculating means, and the recalculated remaining time is displayed on the display means. A substrate processing apparatus.

Images