JP2002299484A - Electronic component - Google Patents
Electronic componentInfo
- Publication number
- JP2002299484A JP2002299484A JP2001095775A JP2001095775A JP2002299484A JP 2002299484 A JP2002299484 A JP 2002299484A JP 2001095775 A JP2001095775 A JP 2001095775A JP 2001095775 A JP2001095775 A JP 2001095775A JP 2002299484 A JP2002299484 A JP 2002299484A
- Authority
- JP
- Japan
- Prior art keywords
- case
- solder
- metal layer
- layer
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は例えばＳＡＷデバイ
スなど表面に微細な電極を有する素子をケース内に密閉
する必要のある電子部品に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component, such as a SAW device, which needs to hermetically seal an element having fine electrodes on its surface in a case.
【０００２】[0002]
【従来の技術】従来の電子部品についてＳＡＷデバイス
を例に図面を用いて説明する。2. Description of the Related Art Conventional electronic components will be described with reference to the drawings, taking a SAW device as an example.
【０００３】図５は従来のＳＡＷデバイスの断面図、図
６は同ＳＡＷデバイスの製造工程における要部拡大断面
図である。FIG. 5 is a cross-sectional view of a conventional SAW device, and FIG. 6 is an enlarged cross-sectional view of a main part in a manufacturing process of the SAW device.
【０００４】図において１は酸化アルミニウムなどから
なるケース、２はケース１内に収納するＳＡＷ素子と接
続するための外部電極、３はケース１の上面全体に設け
た金属層、４はＳＡＷ素子、５はＳＡＷ素子４と外部電
極２とを接続するためのワイヤ、６はケース１の開口部
を封止するリッド、７はリッド６と金属層３とを接着す
るハンダである。In FIG. 1, 1 is a case made of aluminum oxide or the like, 2 is an external electrode for connecting to a SAW element housed in the case 1, 3 is a metal layer provided on the entire upper surface of the case 1, 4 is a SAW element, Reference numeral 5 denotes a wire for connecting the SAW element 4 and the external electrode 2, reference numeral 6 denotes a lid for sealing the opening of the case 1, and reference numeral 7 denotes solder for bonding the lid 6 and the metal layer 3.
【０００５】以上のように構成されたＳＡＷデバイスの
製造方法について説明する。[0005] A method of manufacturing the SAW device configured as described above will be described.
【０００６】まず、ケース１の上面全体にメッキにより
金属層３を形成する。次にケース１内にＳＡＷ素子４を
実装し、ワイヤ５でＳＡＷ素子４と外部電極２とを接続
する。次いでハンダ７を金属層３の上に塗布し、リッド
６をケース１の開口部に位置合わせして、リッド６の上
面から加熱することによりハンダ７を溶融してケース１
とリッドとを接合することによりＳＡＷデバイスを得
る。First, a metal layer 3 is formed on the entire upper surface of the case 1 by plating. Next, the SAW element 4 is mounted in the case 1, and the SAW element 4 and the external electrode 2 are connected by the wire 5. Next, the solder 7 is applied on the metal layer 3, the lid 6 is aligned with the opening of the case 1, and the solder 7 is melted by heating from the upper surface of the lid 6 to melt the case 1.
And a lid to obtain a SAW device.
【０００７】[0007]
【発明が解決しようとする課題】この構成によるとハン
ダ溶融の間にそのハンダの蒸気により、溶融ハンダ内に
ガスが発生し、そのガスの破裂時にハンダの一部が図６
に示すように飛散し、ＳＡＷ素子４の表面に落下すると
考えられている。この落下したハンダ７が原因でＳＡＷ
素子４の電極がショート不良を発生するという問題点を
有していた。According to this configuration, a gas is generated in the molten solder by the vapor of the solder during the melting of the solder, and when the gas bursts, a part of the solder is removed.
It is thought that they scatter as shown in FIG. SAW due to this fallen solder 7
There is a problem that the electrode of the element 4 causes a short circuit failure.
【０００８】本発明はこの問題点を解決するもので、ハ
ンダが原因となる素子のショート不良を防止することを
目的とするものである。The present invention has been made to solve this problem, and has as its object to prevent a short circuit of an element caused by solder.
【０００９】[0009]
【課題を解決するための手段】この目的を達成するた
め、以下の構成を有するものである。In order to achieve the above object, the present invention has the following arrangement.
【００１０】本発明の請求項１に記載の発明は、特に、
ケースの上面に設ける金属層をケースの内周端部から所
定の間隔を設けて形成したものであり、ハンダと素子と
の距離が従来よりも長くなるので、例えハンダが飛散し
たとしても素子の上面に落下するのを防止することがで
きる。[0010] The invention described in claim 1 of the present invention is, in particular,
The metal layer provided on the upper surface of the case is formed at a predetermined interval from the inner peripheral end of the case, and the distance between the solder and the element is longer than before, so even if the solder scatters, the element It can be prevented from falling to the upper surface.
【００１１】本発明の請求項２に記載の発明は、特に、
金−スズハンダを用いたものであり、鉛ハンダと比べ溶
融温度での蒸気圧が小さく、飛散のエネルギーが少ない
ためにハンダの飛散を抑制できる。[0011] The invention described in claim 2 of the present invention is, in particular,
Since gold-tin solder is used, the vapor pressure at the melting temperature is lower than that of lead solder, and the scattering energy is small, so that the scattering of solder can be suppressed.
【００１２】本発明の請求項３に記載の発明は、特に、
ケースの上面に設けた金属層の内周端部側表面を覆うガ
ラス層あるいはセラミック層を設けたものであり、この
部分はハンダとなじむことがないので、例えハンダが飛
散したとしても素子の上面に落下するのを防止すること
ができる。[0012] The invention described in claim 3 of the present invention particularly provides
A glass layer or a ceramic layer covering the inner peripheral end surface of the metal layer provided on the upper surface of the case is provided.This portion does not blend with the solder, so even if the solder scatters, the upper surface of the element Can be prevented from falling.
【００１３】本発明の請求項４に記載の発明は、特に、
金−スズハンダを用いたものであり、鉛ハンダと比べ溶
融温度での蒸気圧が小さく、飛散のエネルギーが少ない
ためにハンダの飛散を抑制できる。[0013] The invention described in claim 4 of the present invention particularly provides
Since gold-tin solder is used, the vapor pressure at the melting temperature is smaller than that of lead solder, and the scattering energy is small, so that the scattering of solder can be suppressed.
【００１４】[0014]
【発明の実施の形態】（実施の形態１）以下、実施の形
態１を用いて、本発明の特に請求項１，２に記載の発明
についてＳＡＷデバイスを例に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (Embodiment 1) Hereinafter, the first embodiment of the present invention will be described with reference to a first embodiment using a SAW device as an example.
【００１５】図１は本発明の実施の形態１におけるＳＡ
Ｗデバイスの断面図、図２は同ＳＡＷデバイスの製造工
程における要部拡大断面図である。FIG. 1 shows an SA according to Embodiment 1 of the present invention.
FIG. 2 is a cross-sectional view of the W device, and FIG.
【００１６】図において、１０ａはケース１０の底部と
なる基板、１０ｂは基板１０の上に設けた第１の枠体、
１０ｃは第１の枠体１０ｂの上に設けた第２の枠体、１
０は基板１０ａ、第１の枠体１０ｂ、第２の枠体１０ｃ
からなるケースであり、酸化アルミニウムなどのセラミ
ックを用いて形成したものである。また、１１はケース
１０の内部から外周にかけて設けた外部電極、１２はケ
ース１０の上面に設けた金属層であり、ケース１０の内
周端部から所定の間隔を設けて形成してある。In FIG. 1, reference numeral 10a denotes a substrate serving as a bottom of the case 10, 10b denotes a first frame provided on the substrate 10,
10c is a second frame provided on the first frame 10b, 1
0 is the substrate 10a, the first frame 10b, the second frame 10c
And is formed using a ceramic such as aluminum oxide. Reference numeral 11 denotes an external electrode provided from the inside to the outer periphery of the case 10, and 12 denotes a metal layer provided on the upper surface of the case 10, which is formed at a predetermined distance from an inner peripheral end of the case 10.
【００１７】さらに１３ａはタンタル酸リチウム、ニオ
ブ酸リチウム、水晶などの単結晶からなる圧電基板、１
３ｂは圧電基板１３ａの上にアルミニウムあるいはアル
ミニウム合金を用いて形成したインターディジタルトラ
ンスデューサ（以下ＩＤＴとする）、１３ｃは圧電基板
１３ａの上にＩＤＴ１３ｂと電気的に接続するようにア
ルミニウムあるいはアルミニウム合金を用いて設けた接
続電極、１３は圧電基板１３ａ、ＩＤＴ１３ｂ、接続電
極１３ｂからなるＳＡＷ素子でケース１０の内部に実装
してある。Further, reference numeral 13a denotes a piezoelectric substrate made of a single crystal such as lithium tantalate, lithium niobate, and quartz;
Reference numeral 3b denotes an interdigital transducer (hereinafter referred to as IDT) formed on the piezoelectric substrate 13a using aluminum or aluminum alloy, and reference numeral 13c uses aluminum or aluminum alloy on the piezoelectric substrate 13a so as to be electrically connected to the IDT 13b. The connection electrode 13 provided is a SAW element including the piezoelectric substrate 13a, the IDT 13b, and the connection electrode 13b, and is mounted inside the case 10.
【００１８】さらにまた、１４はＳＡＷ素子１３の接続
電極１３ｃと外部電極１１とを接続するワイヤ、１５は
ケース１０の開口部を封止するリッド、１６はリッド１
５と金属層１２とを接合する金−スズハンダである。Further, reference numeral 14 denotes a wire connecting the connection electrode 13c of the SAW element 13 to the external electrode 11, reference numeral 15 denotes a lid for sealing an opening of the case 10, and reference numeral 16 denotes a lid 1.
5 is a gold-tin solder for joining the metal layer 12 to the metal layer 12.
【００１９】以上のように構成されたＳＡＷデバイスの
製造方法について説明する。A description will be given of a method of manufacturing the SAW device configured as described above.
【００２０】まず、基板１０ａの表面に形成しようとす
る外部電極１１と同じ形状のメッキ下地層を形成する。
このメッキ下地層はタングステンを主成分とするもので
ある。次にこの基板１０ａ上に第１の枠体１０ｂを設け
る。次にこの第１の枠体１０ｂと縦横の長さが同じ第２
の枠体１０ｃを第１の枠体１０ｂの上に設けて、焼成し
て基板１０ａと第１及び第２の枠体１０ｂ，１０ｃを一
体化してケース１０を作製する。基板１０ａ、第１及び
第２の枠体１０ｂ，１０ｃは酸化アルミニウムを主成分
とするセラミックで形成されたものである。また第１の
枠体１０ｂの上面及び側面、第２の枠体１０ｃの上面に
もタングステンを主成分としたメッキ下地層を形成して
いる。First, a plating base layer having the same shape as the external electrode 11 to be formed is formed on the surface of the substrate 10a.
This plating base layer is mainly composed of tungsten. Next, a first frame 10b is provided on the substrate 10a. Next, a second frame having the same length and width as the first frame 10b is used.
The frame 10c is provided on the first frame 10b, fired, and the substrate 10a and the first and second frames 10b and 10c are integrated to form the case 10. The substrate 10a and the first and second frames 10b and 10c are formed of a ceramic containing aluminum oxide as a main component. In addition, a plating base layer containing tungsten as a main component is formed on the upper and side surfaces of the first frame 10b and the upper surface of the second frame 10c.
【００２１】次にこのケース１０のメッキ下地層上にニ
ッケルメッキ層を形成し、このニッケルメッキ層上に金
メッキ層を形成し、外部電極１１と金属層１２とを得
る。この金属層１２は、図１に示すようにケース１０の
上面全体に形成せず、内周端部から所定の間隔を設けて
形成したものである。Next, a nickel plating layer is formed on the plating base layer of the case 10, a gold plating layer is formed on the nickel plating layer, and an external electrode 11 and a metal layer 12 are obtained. The metal layer 12 is not formed on the entire upper surface of the case 10 as shown in FIG. 1, but is formed at a predetermined interval from the inner peripheral end.
【００２２】また、圧電基板１３ａ上に入、出力ＩＤＴ
１３ｂ、このＩＤＴ１３ｂの両側に反射器（図示せず）
及びＩＤＴ１３ｂに電気的に接続された接続電極１３ｃ
を複数形成しＳＡＷ素子１３を得る。次にこのＳＡＷ素
子１３をケース１０の内部に実装し、ワイヤ１４で接続
電極１３ｃと外部電極１１とをそれぞれ接続する。The output IDT is input to and output from the piezoelectric substrate 13a.
13b, reflectors (not shown) on both sides of this IDT 13b
And connection electrode 13c electrically connected to IDT 13b
Are formed to obtain the SAW element 13. Next, the SAW element 13 is mounted inside the case 10, and the connection electrode 13 c and the external electrode 11 are connected by wires 14.
【００２３】その後一方の面に金−スズのハンダ層（図
示せず）を形成した半田濡れ性を有する金属製（本実施
の形態１においては鉄−ニッケル−コバルト合金）のリ
ッド１５をケース１０の開口部を封止するようにハンダ
層をケース１０側にして位置合わせし、リッド１５の上
面から加圧及び加熱し、ハンダ層を溶融することにより
ハンダ１６でケース１０をリッド１５で封止する。Thereafter, a lid 15 made of a metal (in the first embodiment, iron-nickel-cobalt alloy in the first embodiment) having a solder wettability and having a gold-tin solder layer (not shown) formed on one surface thereof is placed in the case 10. The solder layer is positioned on the case 10 side so as to seal the opening of the case 10, the pressure is applied and heated from the upper surface of the lid 15, and the case 10 is sealed with the solder 16 by melting the solder layer. I do.
【００２４】この時金属層１２中にメッキの残渣が存在
すると、ハンダを溶融する熱でこの残渣がガス化するた
めか、ハンダ１６の粒が飛散する恐れが有るが、本実施
の形態１においては金属層１２をケース１０の内周端部
から所定の間隔を設けて形成しているため、例えハンダ
１６の一部が飛散したとしても、図２に示すようにＩＤ
Ｔ１３ｂの上に落下しないので、ＩＤＴ１３ｂがショー
トするのを防止できる。At this time, if a residue of plating is present in the metal layer 12, the residue may be gasified by the heat for melting the solder, or the particles of the solder 16 may be scattered. Since the metal layer 12 is formed at a predetermined interval from the inner peripheral end of the case 10, even if a part of the solder 16 is scattered, as shown in FIG.
Since it does not fall on T13b, it is possible to prevent the IDT 13b from being short-circuited.
【００２５】以上のように本実施の形態１におけるＳＡ
Ｗデバイスは、金属層１２をケース１０の内周端部から
所定の間隔を設けて形成しているため、例えハンダ１６
が飛散しても、ＩＤＴ１３ｂの上に落下するのを防止
し、ショート不良の発生を抑制することができる。As described above, the SA according to the first embodiment
In the W device, the metal layer 12 is formed at a predetermined distance from the inner peripheral end of the case 10.
Scattered over the IDT 13b, and the occurrence of short-circuit failure can be suppressed.
【００２６】また、ハンダ１６として金−スズハンダを
用いることにより、鉛ハンダと比べ溶融温度での蒸気圧
が小さく、飛散のエネルギーが少ないために、ハンダの
飛散を抑制でき、ショート不良をさらに抑制できる。Also, by using gold-tin solder as the solder 16, the vapor pressure at the melting temperature is smaller than that of lead solder and the energy of the scattering is small, so that the scattering of the solder can be suppressed, and the short-circuit failure can be further suppressed. .
【００２７】（実施の形態２）以下、実施の形態２を用
いて、本発明の特に請求項３，４に記載の発明について
ＳＡＷデバイスを例に説明する。(Embodiment 2) Hereinafter, a second embodiment of the present invention will be described with reference to a second embodiment, taking a SAW device as an example.
【００２８】図３は本実施の形態２におけるＳＡＷデバ
イスの断面図、図４は同ＳＡＷデバイスの製造工程にお
ける要部拡大断面図である。FIG. 3 is a cross-sectional view of the SAW device according to the second embodiment, and FIG. 4 is an enlarged cross-sectional view of a main part in a manufacturing process of the SAW device.
【００２９】図において、２０はハンダ１６の溶融温度
においてガスなどを発生せず、変質しない耐熱性と、ハ
ンダ１６との濡れ性が悪いアルミナなどの金属酸化物の
セラミック材用のガラス層であり、他は図１，２と同様
の構成要素であるので同番号を付して説明する。In the figure, reference numeral 20 denotes a glass layer for a ceramic material of a metal oxide such as alumina which does not generate gas or the like at the melting temperature of the solder 16 and does not deteriorate and has poor wettability with the solder 16. The other components are the same as those shown in FIGS.
【００３０】本実施の形態２のＳＡＷデバイスは実施の
形態１のＳＡＷデバイスと比較すると、金属層１２をケ
ース１０の上面全体に形成したこと及び金属層１２のケ
ース１０の内周端部側表面にガラス層２０を設けたこと
が異なる。The SAW device according to the second embodiment is different from the SAW device according to the first embodiment in that the metal layer 12 is formed on the entire upper surface of the case 10 and the surface of the metal layer 12 on the inner peripheral end side of the case 10. Is provided with a glass layer 20.
【００３１】以下、本実施の形態２におけるＳＡＷデバ
イスの製造方法について説明する。Hereinafter, a method for manufacturing a SAW device according to the second embodiment will be described.
【００３２】まず、実施の形態１と同様にして上面全体
に金属層１２、内部から外周にかけて設けた外部電極１
１を有するケース１０を作製する。First, in the same manner as in the first embodiment, the metal layer 12 is formed on the entire upper surface, and the external electrodes 1 are provided from the inside to the outer periphery.
1 is manufactured.
【００３３】次にケース１０の内周端部から所定の幅を
設けて金属層１２の一部を覆うようにガラス層２０を形
成する。このガラス層２０は、厚み５〜５０μｍとし、
ハンダ１６の厚みより薄くすることが望ましい。またガ
ラス層２０の形成は、メッキ下地層形成後、ガラスペー
ストの印刷を行い、ケース１０との同時焼成により形成
する。Next, a glass layer 20 is formed so as to provide a predetermined width from the inner peripheral end of the case 10 and cover a part of the metal layer 12. This glass layer 20 has a thickness of 5 to 50 μm,
It is desirable that the thickness be smaller than the thickness of the solder 16. Further, the glass layer 20 is formed by printing a glass paste after forming the plating base layer and firing the same simultaneously with the case 10.
【００３４】次いで実施の形態１と同様にして作製した
ＳＡＷ素子１３をケース１０の内部に実装し、ワイヤ１
４でＳＡＷ素子１３の接続電極１３ｃと外部電極１１と
をそれぞれ接続する。Next, the SAW element 13 manufactured in the same manner as in the first embodiment is mounted inside the case 10 and the wire 1
At 4, the connection electrode 13c of the SAW element 13 is connected to the external electrode 11.
【００３５】その後一方の面に金−スズのハンダ層（図
示せず）を形成した半田濡れ性を有する金属製（本実施
の形態２においては鉄−ニッケル−コバルト合金）のリ
ッド１５をケース１０の開口部を封止するようにハンダ
層をケース１０側にして位置合わせし、リッド１５の上
面から加圧及び加熱し、ハンダ層を溶融することにより
ハンダ１６でケース１０をリッド１５で封止する。After that, a lid 15 made of a metal (iron-nickel-cobalt alloy in the second embodiment) having a solder wettability and having a gold-tin solder layer (not shown) formed on one surface is placed in the case 10. The solder layer is positioned with the solder layer facing the case 10 so that the opening of the case 10 is sealed, and pressure and heat are applied from the upper surface of the lid 15, and the case 10 is sealed with the solder 16 by melting the solder layer. I do.
【００３６】この時金属層１２中にメッキの残渣が存在
すると、ハンダを溶融する熱でこの残渣がガス化するた
めか、ハンダ１６の粒が飛散する恐れが有るが、本実施
の形態２においてはケース１０の内周端部側の金属層１
２の表面をガラス層２０で被覆しているため、例えハン
ダ１６の一部が飛散したとしても、図４に示すようにＩ
ＤＴ１３ｂの上に落下しないので、ＩＤＴ１３ｂがショ
ートするのを防止できる。At this time, if there is a plating residue in the metal layer 12, the residue may be gasified by the heat for melting the solder, or the particles of the solder 16 may be scattered. Is the metal layer 1 on the inner peripheral end side of the case 10.
2 is covered with the glass layer 20, even if a part of the solder 16 is scattered, as shown in FIG.
Since it does not fall on the DT 13b, it is possible to prevent the IDT 13b from being short-circuited.
【００３７】以上のように本実施の形態２におけるＳＡ
Ｗデバイスは、ケース１０の内周端部側の金属層１２の
表面をガラス層２０で被覆しているため、例えハンダ１
６が飛散してもＩＤＴ１３ｂの上に落下するのを防止
し、ショート不良の発生を抑制することができる。As described above, the SA according to the second embodiment
In the W device, the surface of the metal layer 12 on the inner peripheral end side of the case 10 is covered with the glass layer 20.
Even if 6 scatters, it can be prevented from falling onto IDT 13b, and occurrence of short-circuit failure can be suppressed.
【００３８】なお本実施の形態２においては、金属層１
２の表面をガラス層２０で被覆したが、ガラス層２０に
変えてハンダ１６の溶融温度においてガスなどを発生せ
ず、変質しない耐熱性と、ハンダ１６との濡れ性が悪い
セラミック層を設けても同様の効果が得られる。In the second embodiment, the metal layer 1
The surface of No. 2 was covered with a glass layer 20, but instead of the glass layer 20, a ceramic layer having no heat generation and no deterioration at the melting temperature of the solder 16 and poor wettability with the solder 16 was provided. Has the same effect.
【００３９】またハンダ１６として金−スズハンダを用
いることにより、鉛ハンダと比べ溶融温度での蒸気圧が
小さく、飛散のエネルギーが少ないために、ハンダ１６
の飛散を抑制でき、ショート不良を更に抑制できる。Also, by using gold-tin solder as the solder 16, the vapor pressure at the melting temperature is smaller and the energy of scattering is smaller than that of lead solder.
Can be suppressed, and short-circuit failure can be further suppressed.
【００４０】さらに、実施の形態１，２においてはＳＡ
Ｗデバイスを例に説明したが、表面に電極を有し、ハン
ダの粒が落下した時ショート不良を発生するような素子
をケース内にハンダを用いて封止する電子部品であれば
同様の効果が得られる。Further, in Embodiments 1 and 2, SA
Although the W device has been described as an example, the same effect can be obtained as long as the electronic component has an electrode on the surface and seals an element that generates a short circuit when solder particles drop by using a solder in a case. Is obtained.
【００４１】[0041]
【発明の効果】以上のように本発明は、ケースの上面の
金属層をケースの内周端部から所定の間隔を設けて形成
することにより、ハンダと表面に電極を有する素子との
距離が従来よりも長くなるので、例えハンダが飛散した
としても素子の上面に落下するのを防止することができ
る。As described above, according to the present invention, the distance between the solder and the element having the electrode on the surface is reduced by forming the metal layer on the upper surface of the case at a predetermined distance from the inner peripheral end of the case. Since it is longer than before, even if the solder scatters, it can be prevented from dropping on the upper surface of the element.
【００４２】従ってショート不良の少ない電子部品を提
供することができる。Accordingly, it is possible to provide an electronic component with few short-circuit defects.
【図１】本発明の実施の形態１におけるＳＡＷデバイス
の断面図FIG. 1 is a sectional view of a SAW device according to a first embodiment of the present invention.
【図２】本発明の実施の形態１におけるＳＡＷデバイス
の製造工程を説明するための要部拡大断面図FIG. 2 is an enlarged cross-sectional view of a main part for describing a manufacturing process of the SAW device according to the first embodiment of the present invention.
【図３】本発明の実施の形態２におけるＳＡＷデバイス
の断面図FIG. 3 is a sectional view of a SAW device according to a second embodiment of the present invention.
【図４】本発明の実施の形態２におけるＳＡＷデバイス
の製造工程を説明するための要部拡大断面図FIG. 4 is an enlarged sectional view of a main part for describing a manufacturing process of a SAW device according to a second embodiment of the present invention.
【図５】従来のＳＡＷデバイスの断面図FIG. 5 is a cross-sectional view of a conventional SAW device.
【図６】従来のＳＡＷデバイスの製造工程を説明するた
めの要部拡大断面図FIG. 6 is an enlarged cross-sectional view of a main part for explaining a manufacturing process of a conventional SAW device.
１０ ケース １０ａ 基板 １０ｂ 第１の枠体 １０ｃ 第２の枠体 １１ 外部電極 １２ 金属層 １３ ＳＡＷ素子 １３ａ 圧電基板 １３ｂ ＩＤＴ １３ｃ 接続電極 １４ ワイヤ １５ リッド １６ ハンダ ２０ ガラス層 DESCRIPTION OF SYMBOLS 10 Case 10a Substrate 10b 1st frame 10c 2nd frame 11 External electrode 12 Metal layer 13 SAW element 13a Piezoelectric substrate 13b IDT 13c Connection electrode 14 Wire 15 Lid 16 Solder 20 Glass layer
Claims (4)
に収納した表面に電極を有する素子と、前記ケースの上
面に設けた金属層と、前記ケースの開口部を封止するリ
ッドと、前記金属層とリッドとを接続するハンダとを備
え、前記金属層は前記ケースの内周端部から所定の間隔
を設けて形成したものである電子部品。A case having an opening, an element housed in the case and having an electrode on a surface thereof, a metal layer provided on an upper surface of the case, a lid for sealing the opening of the case, An electronic component comprising: a solder for connecting a metal layer and a lid; wherein the metal layer is formed at a predetermined distance from an inner peripheral end of the case.
記載の電子部品。2. The electronic component according to claim 1, wherein the solder is a gold-tin alloy.
に収納した表面に電極を有する素子と、前記ケースの上
面に設けた金属層と、前記ケースの開口部を封止するリ
ッドと、前記金属層とリッドとを接続するハンダとを備
え、前記金属層の前記ケースの内周端部側の表面を被覆
するガラス層あるいはセラミック層を設けた電子部品。3. A case having an opening, an element housed in the case and having an electrode on a surface, a metal layer provided on an upper surface of the case, a lid for sealing the opening of the case, An electronic component comprising: a solder for connecting a metal layer and a lid; and a glass layer or a ceramic layer covering a surface of the metal layer on an inner peripheral end side of the case.
記載の電子部品。4. The electronic component according to claim 3, wherein the solder is a gold-tin alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001095775A JP2002299484A (en) | 2001-03-29 | 2001-03-29 | Electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001095775A JP2002299484A (en) | 2001-03-29 | 2001-03-29 | Electronic component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002299484A true JP2002299484A (en) | 2002-10-11 |
Family
ID=18949783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001095775A Pending JP2002299484A (en) | 2001-03-29 | 2001-03-29 | Electronic component |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002299484A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007202095A (en) * | 2005-12-28 | 2007-08-09 | Kyocera Kinseki Corp | Piezoelectric device |
| JP2016531421A (en) * | 2013-07-11 | 2016-10-06 | レイセオン カンパニー | Wafer-level packaged solder barrier used as a vacuum getter |
| JP2016213426A (en) * | 2015-05-01 | 2016-12-15 | ▲き▼邦科技股▲分▼有限公司 | Packaging method of semiconductor |
-
2001
- 2001-03-29 JP JP2001095775A patent/JP2002299484A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007202095A (en) * | 2005-12-28 | 2007-08-09 | Kyocera Kinseki Corp | Piezoelectric device |
| JP2016531421A (en) * | 2013-07-11 | 2016-10-06 | レイセオン カンパニー | Wafer-level packaged solder barrier used as a vacuum getter |
| JP2016213426A (en) * | 2015-05-01 | 2016-12-15 | ▲き▼邦科技股▲分▼有限公司 | Packaging method of semiconductor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5119866B2 (en) | Quartz device and sealing method thereof | |
| JP5603166B2 (en) | Electronic device, electronic apparatus, and electronic device manufacturing method | |
| US20060022319A1 (en) | Airtight package, piezoelectric device, and piezoelectric oscillator | |
| JPWO2005002049A1 (en) | Surface acoustic wave device | |
| JP4180982B2 (en) | Surface acoustic wave device, package thereof and manufacturing method thereof | |
| JP2002299484A (en) | Electronic component | |
| WO2006077974A1 (en) | Sealing board and method for producing the same | |
| JP2007096597A (en) | Surface acoustic-wave device and its manufacturing method | |
| JP2002261570A (en) | Package base for crystal oscillator, and method for producing crystal oscillator package structure using the same | |
| JP2004266239A (en) | Piezoelectric device | |
| JP3401781B2 (en) | Electronic component package and method of manufacturing electronic component package | |
| JP4058760B2 (en) | Piezoelectric vibration device and real-time clock | |
| JP2002026679A (en) | Package for piezoelectric vibration device | |
| JP2008271093A (en) | Piezoelectric vibration device | |
| JP3374395B2 (en) | Package for electronic components | |
| JP2007318209A (en) | Surface mounted piezoelectric vibrating device, and manufacturing method thereof | |
| JP2001110922A (en) | Package for electronic component | |
| JP3831937B2 (en) | Package for electronic components | |
| JP4878207B2 (en) | Piezoelectric device | |
| JP2004281545A (en) | Sealing method for piezoelectric device package, package lid, and piezoelectric device | |
| JP2000150689A (en) | Electronic part | |
| JP4549253B2 (en) | Piezoelectric device | |
| JP2010165904A (en) | Electronic component package, and manufacturing method therefor | |
| JP3893617B2 (en) | Package for electronic components | |
| JP2001156193A (en) | Electronic component device |