JP2008271093A - Piezoelectric vibration device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce the height of a piezoelectric vibration device, and also to prevent a degradation in the characteristic of the piezoelectric vibration device. <P>SOLUTION: A crystal oscillator 1 includes: a base 3 for holding a crystal oscillation piece 2; and a lid 4 formed of a metallic material for airtightly sealing the crystal oscillation piece 2 which is held by the base 3. The base 3 is joined with the lid 4 via a joint material 7. The base 3 includes an electrode part 362 led by a terminal electrode 364. The joint material 7 is composed of an insulating part 72 and a conductive part 73. The lid 4, the conductive part 73, and the electrode part 362 are electrically connected. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a piezoelectric vibration device.

  Examples of electronic components that require hermetic sealing include piezoelectric vibration devices such as crystal resonators, crystal filters, and crystal oscillators. In each of these products, an excitation electrode is formed on the main surface of the quartz crystal vibrating piece, and the excitation electrode is hermetically sealed by the main body housing of the piezoelectric vibration device in order to protect the excitation electrode from the outside air.

  The piezoelectric vibration device has a main body housing composed of a base and a lid. In this piezoelectric vibration device, the base and the lid are bonded to each other with a bonding material to form an internal space of the main body housing, and the internal space is hermetically sealed, and the piezoelectric vibrating piece is held in the internal space (for example, Patent Documents). 1).

The main body housing of the surface-mount type crystal resonator disclosed in Patent Document 1 (piezoelectric vibration device referred to in the present specification) is a ceramic having a concave cross section for accommodating a crystal vibration plate (piezoelectric vibration piece referred to in the present specification). It consists of a package (a base in this specification) and a lid (a lid in this specification) made of a ceramic material bonded to the opening of the ceramic package. Then, a glass material is used as the bonding material, the glass material is formed on the bonding surface of the lid, the glass material is melted, the lid is bonded to the ceramic package, and the rectangular crystal vibrating piece is hermetically sealed in the internal space.
JP 2004-104766 A

  In the background art described in Patent Document 1 described above, since a ceramic material is used for the lid, it is not preferable for downsizing the surface-mount crystal unit. This is related to the material of the ceramic material being brittle. When the ceramic material is used for the lid, it needs to have a certain thickness or more in order to have strength for use as a lid.

  Accordingly, in order to solve the above-described problems, an object of the present invention is to provide a piezoelectric vibration device that reduces the height of the piezoelectric vibration device while suppressing the thickness of the lid.

  In order to achieve the above object, a piezoelectric vibrating device according to the present invention includes a base that holds a piezoelectric vibrating piece, and a lid that is joined to the base to hermetically seal the piezoelectric vibrating piece held on the base. In the piezoelectric vibration device in which the base and the lid are bonded via a bonding material, the lid is made of a metal material, and the bonding material includes an insulating portion and a conductive portion, and the insulating portion and the lid The melting point of the conductive part is the same or similar, and the base is provided with an electrode part routed to a terminal electrode that is electrically connected to the outside, and the lid, the conductive part, and the electrode part are electrically connected It is characterized by being connected to.

  According to the present invention, the lid is made of a metal material, the bonding material is composed of the insulating part and the conductive part, and the melting points of the insulating part and the conductive part are the same or approximate, and the base is connected to the base. Since the electrode portion is provided and the lid, the conductive portion, and the electrode portion are electrically connected, it is possible to reduce the height of the piezoelectric vibration device while suppressing the thickness of the lid. According to the present invention, it is possible to reduce the height of the piezoelectric vibration device and connect the lid to GND even when a metal material is used for the lid, and as a result, the piezoelectric vibration It becomes possible to suppress the deterioration of the characteristics of the piezoelectric vibration device, such as suppressing electromagnetic interference from the external environment to the piece (taking EMI countermeasures).

  In the above configuration, the melting points of the insulating part and the conductive part may be the same or close.

  In this case, since the melting points of the insulating part and the conductive part are the same or approximate, when the base and the lid are joined, a part of the joining material is excessively melted or the joining material It is possible to suppress the occurrence of poor bonding without melting a part, and even when the insulating portion and the conductive portion are provided in the bonding material, the base and the lid can be stably provided. It becomes possible to join with.

  The said structure WHEREIN: The said piezoelectric vibrating piece may be joined and hold | maintained to the said base using the adhesive agent which consists of silicone resin, and 280-330 degreeC may be sufficient as the said melting | fusing point.

  In this case, the piezoelectric vibrating piece is bonded and held to the base using the adhesive, and the melting point is 280 to 330 ° C. Therefore, outgas is generated when the base and the lid are bonded. Can be suppressed.

  The said structure WHEREIN: The low melting glass with which the filler component was uniformly distributed over the whole may be used for the said insulation part.

  In this case, generation of voids in the insulating part can be suppressed. Specifically, since the filler component is uniformly distributed throughout the low-melting glass, voids in the low-melting glass are hardly generated or not generated.

  In the above configuration, specifically, the insulating portion may be formed by a sputtering method.

  In this case, since the filler component is contained in the low melting glass by sputtering, it becomes possible to contain the filler component by fine particles unlike screen printing, and the filler component is uniformly distributed in the low melting glass with fine particles. It becomes possible to make it. Further, in the screen printing, the temporary fixing of the bonding material is an indispensable process, but according to the present configuration, this process can be omitted and the process can be simplified. In addition, according to the present invention, it is possible to reduce the thickness of the low-melting glass by forming the insulating portion by sputtering, thereby reducing the height of the piezoelectric vibration device.

  The said structure WHEREIN: The thermal expansion coefficient of the said insulation part may have a value approximated or the same as the said base and the said lid | cover.

  In this case, the thermal expansion coefficients of the base, the lid, and the insulating portion are approximate or the same value, and it is possible to suppress stress applied when the base and the lid are joined due to the difference in thermal expansion coefficient. It becomes possible to prevent cracking of the glass sealing portion or peeling of the glass sealing portion due to stress at the time of bonding.

  According to the piezoelectric vibrating device according to the present invention, it is possible to reduce the height of the piezoelectric vibrating device while suppressing the thickness of the lid.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiment, a case where the present invention is applied to an AT-cut quartz resonator as a piezoelectric vibration device is shown.

  As shown in FIG. 1, an AT-cut crystal resonator 1 (hereinafter referred to as a crystal resonator) according to the present example is an AT-cut crystal resonator element 2 (a piezoelectric resonator element referred to in the present invention) formed in a rectangular shape in plan view. And a base 3 for holding the crystal vibrating piece 2 and a lid 4 for hermetically sealing the crystal vibrating piece 2 held on the base 3.

  In this crystal resonator 1, as shown in FIG. 1, a base 3 and a lid 4 are heated and melt-bonded in a vacuum heating furnace using a bonding material 7 described below to form a main body casing 5. An internal space 6 is formed in the body 5. The crystal vibrating piece 2 is held on the base 3 of the internal space 6 and the internal space 6 of the main body housing 5 is hermetically sealed. In the internal space 6, the crystal vibrating piece 2 is bonded and held to the base 3 using a conductive adhesive 81 (an adhesive referred to in the present invention) such as a silicone resin.

  Next, each configuration of the crystal resonator 1 will be described with reference to FIGS.

  As shown in FIGS. 1 and 2, the base 3 is composed of a bottom 31 of a rectangular plate made of ceramic material (alumina) and a dam portion 32 of ceramic material laminated on the bottom 31. The bottom 31 and the bank 32 are integrally fired in a concave cross section. The bank portion 32 is formed along the outer periphery of the upper surface of the bottom portion 31. The upper surface (end surface) of the bank portion 32 is a junction region 33 with the lid 4. Further, on the outer periphery of the base 3, castellations 34 are formed at the four corners. Then, on the surface 35 of the base 3, there are two pillow portions 39 for suppressing the inclination of the quartz crystal resonator element 2 to be mounted, and two excitation electrodes 23 and 24 (see below) of the crystal resonator element 2. Four electrode portions 362 for electrically connecting the electrode pad 361, the lid 4 and a part of the terminal electrode 364 (see below) are provided. The electrode pad 361 is electrically connected to a part of the terminal electrode 364 formed on the back surface 37 of the base 3 via the connection electrode 363 that is routed correspondingly to the electrode pad 361 from the terminal electrode 364. Parts and external devices). In addition, the electrode part 362 is routed to a terminal electrode 364 that is electrically connected to the outside (external parts or external devices), and like the electrode pad 361, the electrode part 362 is connected to the base 3 via the corresponding connection electrode 363. The terminal electrode 364 formed on the back surface 37 is electrically connected, and the terminal electrode 364 is connected to an external component or an external device. Note that the electrode pad 361, the electrode portion 362, the connection electrode 363, and the terminal electrode 364 are formed by integrally baking with the base 3 after printing a metallized material such as tungsten or molybdenum. Of these electrode pads 361, electrode portion 362, connection electrode 363, and terminal electrode 364, the nickel plating is formed on the metallized portion of the exposed portion and the exposed portion of the base 3, and the upper portion thereof is plated with gold. Is formed.

  The lid 4 is made of a metal material (specifically, Kovar simple substance), and is formed into a single rectangular plate in plan view as shown in FIGS. 1 and 3, and each corner of the single plate in plan view has a curvature. Has been. Further, the external dimensions of the lid 4 in plan view are designed to be substantially the same as or slightly smaller than the external dimensions of the base 3 in the same direction. As shown in this embodiment, by using a metal material for the lid 4, the thickness can be reduced compared to the case where a ceramic, which is the same material as the base 3, is used for the lid 4. Can be reduced in height. Further, when the lid 4 having the same thickness as that of the present embodiment is formed using ceramic, the ceramic is more brittle than the metal material, and the strength cannot be maintained.

  As shown in FIGS. 1 and 3, a bonding material 7 having a thickness of 10 μm is used for bonding the bonding region 33 of the base 3 and the bonding region 41 of the lid 4. The bonding material 7 includes a low melting point glass insulating portion 72 made of tin phosphate and an alloy conductive portion 73 made of gold-tin. Note that most of the bonding material 7 is constituted by an insulating portion 72, and the remaining portion is constituted by a conductive portion 73. Specifically, as shown in FIGS. 1 to 3, the conductive portion 73 is formed at each corner portion in plan view of the crystal resonator 1, and insulating portions 72 are formed at other positions. The melting point with the conductive portion 73 is about 320 ° C. Then, as shown in FIG. 1, the lid 4, the base 3, and the base 3 are joined via the joining material 7, whereby the lid 4, the conductive portion 73, and the electrode portion 362 are electrically connected. In this embodiment, the bonding material 7 is formed on the lid 4 by sputtering before the lid 4 and the base 3 are joined (see FIG. 3). Specifically, the insulating portion 72 is formed by sputtering in the bonding region 41 of the lid 4 in a chamber in a vacuum atmosphere using an RF power source. Then, after the insulating portion 72 is formed, the conductive portion 73 is formed by sputtering in a state where the position where the insulating portion 72 is formed in the bonding region 41 of the lid 4 is masked by sputtering, and the bonding material 7 shown in FIG. 4 is formed. In this embodiment, the conductive portion 73 is formed after the insulating portion 72 is formed and the bonding material 7 is formed. However, the insulating portion 72 is formed and the bonding material 7 is formed after the conductive portion 73 is formed. Also good.

  The lower melting point of the insulating portion 72 described above is performed by adjusting the lead content in the low melting point glass and controlling the melting point. In this embodiment, the insulating portion 72 is made of low-melting glass made of lead oxide. This low-melting glass contains a filler component made of willemite so that its thermal expansion coefficient is similar to or the same as that of the base 3 and the lid 4. In addition, the filler component here refers to a component contained in the low-melting-point glass in units of atomic level, as distinguished from the filler having a particle size. By the way, this low melting point glass is formed by sputtering in a state in which the position (corner portion in plan view) where the conductive portion 73 is formed in the bonding region 41 of the lid 4 is masked by sputtering. The filler component is uniformly distributed throughout the formation (the filler component is uniformly distributed throughout the low-melting glass). By uniformly disposing the filler component throughout, the thermal expansion coefficient can be made the same at any position of the low melting point glass.

  In this embodiment, the lid 4 on which the bonding material 7 shown in FIG. 3 is formed is used. However, the formation of the bonding material 7 is not limited to this. For example, as shown in FIGS. Form may be sufficient. Specifically, FIG. 3 described above shows an example in which the bonding material 7 is formed in the bonding region 41 corresponding to the bonding region 33 of the base 3 among the bonding surfaces bonded to the base 3 of the lid 4. On the other hand, FIG. 4 shows an example in which the bonding material 7 is formed on the lid 4 wider than the formation position of the bonding material 7 shown in FIG. FIG. 5 shows an example in which the bonding material 7 is formed on the entire bonding surface bonded to the base 3 of the lid 4.

Moreover, the thermal expansion coefficient of the base 3 according to the above-described embodiment is 7.4 × 10 ⁻⁶ (1 / ° C.), and the thermal expansion coefficient of the lid 4 is 4.5 to 5.1 × 10 ⁻⁶ ( 1 and 3, and the thermal expansion coefficient of the low-melting glass constituting most of the bonding material 7 is 4.5 to 7.5 × 10 ⁻⁶ (1 / ° C.) as shown in FIGS. . It is preferable to set the thermal expansion coefficient of the bonding material 7 to an intermediate value between the thermal expansion coefficient of the base 3 and the thermal expansion coefficient of the lid 4.

  By the way, when a low melting point glass having a thickness of 10 μm as shown in this embodiment is applied to the base 3 by screen printing, the thickness of the low melting point glass cannot be suppressed, and a thin low melting point glass is not formed on the base 3. It cannot be applied and formed. On the other hand, when the sputter method is used to form the base 3 by sputtering as shown in the present embodiment, the coating thickness of the low melting point glass can be suppressed, which is suitable for forming a thin low melting point glass on the base 3. .

  Further, as shown in FIG. 1, a part 71 of the bonding material 7 is formed as an inner meniscus when the base 3 and the lid 4 are joined, and is formed in the internal space 6 formed by the base 3 and the lid 4. It is arranged. Disposing the part 71 of the bonding material 7 in the internal space 6 here means not only facing the part 71 of the bonding material 7 in the internal space 6 but also a part of the bonding material 7 in the internal space 6. It means a state in which 71 is projected. Specifically, a part 71 of the bonding material 7 is overhanged on the inner space 6 side with respect to the bank portion 32 of the base 3. As shown in FIG. 1, a part 71 of the bonding material 7 is overhanging from the entire bank portion 32 of the base 3 to the internal space 6 side.

  As shown in FIGS. 1 and 2, the quartz crystal resonator element 2 is formed of an AT cut quartz plate (not shown), and is formed into a single rectangular parallelepiped on a rectangular plan view. On both main surfaces 21 and 22 of the crystal vibrating piece 2, the excitation electrodes 23 and 24 are electrically connected to the external electrodes (in this embodiment, the electrode pads 361 of the base 3). In order to connect, extraction electrodes 25 and 26 extracted from the excitation electrodes 23 and 24 are formed. These excitation electrodes 23 and 24 and extraction electrodes 25 and 26 are, for example, in the order of chrome-gold, chrome-gold-chrome, chrome-silver, or chrome-silver-chromium from the quartz diaphragm side. The layers are stacked in this order. Then, the extraction electrodes 25 and 26 of the crystal vibrating piece 2 and the electrode pad 361 of the base 3 are joined by the conductive adhesive 81, and the crystal vibrating piece 2 is held by the base 3 as shown in FIGS. Has been.

  A conductive adhesive 81 is used as an adhesive for the piezoelectric vibrating piece for bonding and holding the crystal vibrating piece 2 to the base 3. The conductive adhesive 81 is composed of an undercoat adhesive 81a and an overcoat adhesive 81b. The undercoat adhesive 81a provides conduction between the crystal vibrating piece 2 and the electrode pad 361 and uses the crystal vibrating piece 2 as a base 3. It holds and reinforces the holding of the quartz crystal vibrating piece 2 to the base 3 by the top coating adhesive 81b.

  A lid in which the crystal vibrating piece 2 is electromechanically bonded and held to the base 3 having the above-described configuration via the conductive adhesive 81, and the bonding material 7 is sputter-formed on the base 3 that holds and holds the crystal vibrating piece 2 4 is heated and melt bonded in a vacuum heating furnace to manufacture the crystal unit 1.

  As described above, according to the crystal unit 1 according to the present embodiment, the lid 4 is made of a metal material, the bonding material 7 is composed of the insulating portion 72 and the conductive portion 73, and the electrode portion 362 is provided on the base 3. Since the lid 4, the conductive portion 73, and the electrode portion 362 are electrically connected, the thickness of the lid 4 can be suppressed and the crystal resonator 1 can be reduced in height. According to the present embodiment, the height of the quartz crystal resonator 1 can be reduced, and the lid 4 can be connected to the GND even when a metal material is used for the lid 4. It is possible to suppress the deterioration of the characteristics of the crystal unit 1 such that electromagnetic interference from the external environment to the piece 2 can be suppressed (EMI countermeasures can be taken).

  In addition, since the melting points of the insulating portion 72 and the conductive portion 73 are the same or approximate, when the base 3 and the lid 4 are joined, a portion of the joining material 7 is excessively melted or the joining material 7 is present. It is possible to suppress the occurrence of bonding failure without melting the portion, and even when the insulating material 72 and the conductive material 73 are provided in the bonding material 7, the base 3 and the lid 4 can be stably formed. Bonding can be performed.

  Further, since the crystal vibrating piece 2 is bonded and held to the base 3 using the conductive adhesive 81 and the melting point is 290 to 320 ° C., outgas is generated when the base 3 and the lid 4 are bonded. Can be suppressed. Specifically, when the heat resistance temperature of the silicone resin is about 300 ° C. and the base 3 and the lid 4 are joined at a temperature exceeding the heat resistance temperature, outgas is generated, and the outgas is generated by the crystal resonator 1. However, according to this configuration, generation of outgas can be suppressed and deterioration of the characteristics of the crystal unit 1 can be suppressed.

  Moreover, since the low melting point glass in which the filler component is uniformly distributed over the whole is used for the insulating portion 72, generation of voids in the insulating portion 72 can be suppressed. Specifically, since the filler component is uniformly distributed throughout the low-melting glass, voids in the low-melting glass are hardly generated or not generated.

  In addition, according to the crystal unit 1 according to the present embodiment, the filler component is contained in the low melting glass by the sputtering method, and therefore, unlike the screen printing, the filler component can be contained by fine particles. The filler component can be uniformly distributed with fine particles. Further, in the screen printing, the temporary fixing of the bonding material is an indispensable process, but according to the crystal resonator 1 according to the present embodiment, this process can be omitted, and the process can be simplified. Further, according to the crystal unit 1 according to the present embodiment, the thickness of the low melting point glass can be reduced by the formation of the insulating portion 72 by the sputtering method, and the crystal unit 1 can be reduced in height.

  Further, since the thermal expansion coefficient of the insulating portion 72 has a value that is similar to or the same as that of the base 3 and the lid 4, the stress applied when the base 3 and the lid 4 are joined can be suppressed due to the difference in thermal expansion coefficient. Cracks in the glass sealing portion or peeling of the glass sealing portion caused by stress at the time of bonding can be prevented.

  Further, since the bonding material 7 is formed with an inner meniscus, the bonding width of the bonding material 7 at the time of bonding the base 3 and the lid 4 can be secured, and a new bonding width of the bonding material 7 can be secured. There is no need to enlarge the main body casing 5, and the crystal unit 1 can be miniaturized.

  Further, since the conductive portions 73 of the bonding material 7 are formed at the respective corners in the plan view of the lid 4 and the electrode portions 363 are provided at the respective corners in the plan view of the bank portion 32, the lid 4 to the base 3 is provided. The joining direction is not limited at the time of joining, and the degree of freedom of joining of the lid 4 to the base 3 is high.

  In this embodiment, the AT-cut quartz crystal vibrating piece 2 is used as the piezoelectric vibrating piece. However, the present invention is not limited to this, and a tuning fork type quartz vibrating piece may be used.

  In this embodiment, a silicone resin is used for the conductive adhesive 81, but the present invention is not limited to this, and any other conductive adhesive may be used. For example, an epoxy resin, A polyimide resin or the like may be used.

In this embodiment, a ceramic material is used for the base 3, but the present invention is not limited to this. If the thermal expansion coefficients of the base 3, the lid 4, and the insulating portion 72 are approximate or the same value, For example, an additive may be included in the base of the ceramic material to approximate the thermal expansion coefficient to the lid 4 and the insulating portion 72. Specifically, the thermal expansion coefficient of the base 3 may be set to 4.5 to 5.5 × 10 ⁻⁶ (1 / ° C.).

  Further, in this embodiment, a single Kovar is used for the lid 4, but the present invention is not limited to this, and the thermal expansion coefficients of the base 3, the lid 4, and the insulating portion 72 are approximate or the same value. The lid 4 may be made of any material. For example, the lid 4 may be composed of a layer laminated in the order of nickel-kovar, a layer laminated in the order of nickel-kovar-nickel, 42 alloy, or the like.

  In the present embodiment, the thickness of the bonding material 7 is 10 μm, but this is a preferred example and is not limited thereto, and may be set to any thickness as long as it is 20 μm or less. In particular, when the thickness of the bonding material 7 is 10 μm or less, the thickness of the bonding material 7 that cannot be realized by the bonding material applied and formed by screen printing can be achieved, and the crystal resonator 1 can be reduced in height. Thus, in order to reduce the size of the crystal unit 1, it is desired to make the thickness of the bonding material 7 thinner.

  In this embodiment, the melting point of the insulating part 72 and the conductive part 73 is about 320 ° C. However, the present invention is not limited to this, and the melting point of the insulating part 72 and the conductive part 73 is 280 to 800 ° C., respectively. It is only necessary that the temperature is set to 330 ° C. and that the insulating portions 72 and the conductive portions 73 have the same or similar melting points.

  Further, in this embodiment, willemite is used as the filler component contained in the insulating portion 72, but is not limited to this, and the thermal expansion coefficient of the insulating portion 72 is similar to or the same as that of the base 3 and the lid 4. If it becomes a value, you may use another material. Specifically, cordierite, zirconium phosphate, silica filler or the like may be used as the filler component.

  In this embodiment, lead oxide is used as the low melting point glass. However, the present invention is not limited to this, and the melting point of the insulating part 72 is equal to or close to the melting point of the conductive part 73. Other materials may be used as long as they are present. Specifically, lead-free glass may be used.

  In this embodiment, the conductive adhesive 81 is composed of the undercoat adhesive 81a and the topcoat adhesive 81b. However, the present invention is not limited to this, and the conductive adhesive 81 is replaced with the undercoat adhesive 81a. It may be configured.

  In this embodiment, the conductive adhesive 81 is used as an adhesive, but the present invention is not limited to this. As shown in FIGS. 6 and 7, a conductive bump 82 made of gold or the like is used as the adhesive. The crystal vibrating piece 2 may be electromechanically joined to the base 3 by the FCB method. In this case, it is an example suitable for miniaturization of the main body housing 5, and generation of outgas from the adhesive can be eliminated when the base 3 and the lid 4 are joined.

  In this embodiment, the bonding material 7 is formed on the lid 4 made of a metal material in a vacuum atmosphere. However, the bonding material 7 is formed on the lid 4 made of a metal material in an atmosphere of an inert gas (nitrogen or the like). It may be formed. However, when the bonding material 7 is formed in a vacuum atmosphere, the generation of voids in the bonding material 7 is suppressed and the CI value of the crystal resonator 1 is reduced compared to the case where the bonding material 7 is formed in an inert gas atmosphere. It can be suppressed to 2/3 or less, and it is preferable to form the bonding material 7 in a vacuum atmosphere. In particular, this is remarkable with respect to the manufacture of the crystal resonator 1 for low frequencies.

  Further, in this embodiment, the bonding material 7 is formed in the bonding region 41 of the lid 4 by the sputtering method. However, the present invention is not limited to this, and the bonding region 33 of the base 3 and the bonding region of the lid 4 are not limited to this. The bonding material 7 may be formed on both, or the bonding material 7 may be formed only on the region 33 of the base 3.

  Specifically, as shown in FIGS. 8 to 11, the bonding material 7 may be formed by sputtering on the bonding region 33 of the base 3 by a sputtering method. 8 and 9 show an example in which the entire upper surface of the bank portion 32 of the base 3 is the bonding region 33, and FIGS. 10 and 11 show the entire upper surface of the bank portion 32 of the base 3 on the short side thereof. An example in which the inside of the base 3 of the formed castellation 34 is the joining region 33 is shown. Note that the bonding material 7 may be formed in both the bonding region 41 of the lid 4 shown in FIGS. 3 to 5 and the bonding region 33 of the base 3 shown in FIGS. In this case, it is preferable to use the bonding material 7 formed in the bonding region 33 of the base 3 as an auxiliary structure for improving the bonding between the bonding material 7 formed on the lid 4 and the base 3. In order to reduce the height of the vibrator 1, the thickness of the bonding material 7 formed in the bonding region 33 of the base 3 is preferably made thinner than the thickness of the bonding material 7 formed on the lid 4.

  In the present embodiment, the lid 4, the conductive portion 73, and the electrode portion 362 are electrically connected via the castellation 34, but the present invention is not limited to this. For example, FIGS. 13, a through hole 321 may be provided in the bank portion 32 of the base 3, and the lid 4, the conductive portion 73, and the electrode portion 362 may be electrically connected via the through hole 321.

  In this embodiment, four conductive portions 73 are provided. However, the number of conductive portions 73 is not limited to this, and the number can be arbitrarily set. For example, the conductive portions 73 are arranged in four corners in the plan view of the lid 4. One of them may be provided at one corner.

  In the present embodiment, the electrode portions 382 are provided at the four corners in plan view of the bank portion 32, but the positions where the electrode portions 382 are provided are not limited thereto, and the lid 4 and the electrodes are interposed via the conductive portions 73. The electrode portion 362 may be provided at a position as shown in FIG. 13 as long as the portion is electrically connected to the portion 362. In FIG. 13, the electrode portion 362 is provided at the center of the short side facing the bank portion 32. In the lid 4 corresponding to the base 3 shown in FIG. 13, the conductive portion 73 is provided in a circular shape in a plan view along the short side of the lid 4 (see FIG. 14). Further, as shown in FIG. 14, the conductive portion 73 may be provided at any position other than the four corners of the lid 4 in plan view, corresponding to the position of the electrode portion 382 provided on the base 3. The shape of 382 is not limited.

  Furthermore, the present invention can be applied to a crystal oscillator that integrally stores other electronic components such as a crystal vibrating piece and an IC, or a crystal oscillator that individually stores other electronic components such as a crystal vibrating piece and an IC. it can.

  It should be noted that the present invention can be implemented in various other forms without departing from the spirit, gist, or main features. For this reason, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

  The present invention can be applied to a piezoelectric vibration device, and is particularly suitable for a crystal resonator or the like.

FIG. 1 is a schematic configuration diagram of a crystal resonator according to the present embodiment, and is a schematic cross-sectional view taken along line AA of FIG. FIG. 2 is a schematic plan view of a base according to the present embodiment, in which a crystal vibrating piece is held in one piece. FIG. 3 is a schematic plan view in which a bonding material is formed on the bonding surface with the base of the lid according to the present embodiment, and a schematic cross-sectional view along the line BB. FIG. 4 is a schematic plan view of a lid according to another example of the present embodiment in which a bonding material is formed on a bonding surface with a base, and a schematic cross-sectional view taken along line B′-B ′. FIG. 5 is a schematic plan view of a lid according to another example of the present embodiment in which a bonding material is formed on the bonding surface with the base, and a schematic cross-sectional view taken along line B ″ -B ″. FIG. 6 is a schematic configuration diagram of a crystal resonator according to another example of the present embodiment, and is a schematic cross-sectional view taken along the line A′-A ′ of FIG. 7. FIG. 7 is a schematic plan view of a base according to another example of the present embodiment in which a quartz crystal vibrating piece is held in one piece. FIG. 8 is a schematic plan view of a base according to another example of the present embodiment in which a bonding material is formed on the bonding surface with the lid. FIG. 9 is a schematic cross-sectional view of the base shown in FIG. 8 taken along line A ″ -A ″. FIG. 10 is a schematic plan view of a base according to another example of the present embodiment in which a bonding material is formed on the bonding surface with the lid. FIG. 11 is a schematic cross-sectional view of the base shown in FIG. 10 taken along the line A ""-A "". FIG. 12 is a schematic configuration diagram of a base according to another example of the present embodiment. FIG. 13 is a schematic configuration diagram of a base according to another example of the present embodiment. FIG. 14 is a schematic plan view of a lid corresponding to the base shown in FIG. 13 in which a bonding material is formed on a bonding surface with the base, and a schematic cross-sectional view taken along line B ″ ″-B ″ ′.

Explanation of symbols

1 Crystal resonator (piezoelectric vibration device)
2 Quartz vibrating piece (piezoelectric vibrating piece)
3 Base 362 Electrode part 364 Terminal electrode 4 Lid 7 Bonding material 72 Insulating part 73 Conductive part

Claims (5)

A base that holds the piezoelectric vibrating piece and a lid that is bonded to the base to hermetically seal the piezoelectric vibrating piece held on the base are provided, and the base and the lid are bonded via a bonding material. In piezoelectric vibration devices,
The lid is made of a metal material,
The bonding material is composed of an insulating portion and a conductive portion, and the melting points of the insulating portion and the conductive portion are the same or approximate,
The base is provided with an electrode portion routed to a terminal electrode that is electrically connected to the outside,
The piezoelectric vibration device, wherein the lid, the conductive portion, and the electrode portion are electrically connected. The piezoelectric vibrating piece is bonded and held to the base using an adhesive made of a silicone resin,
The piezoelectric vibration device according to claim 1, wherein the melting point is 280 to 330 ° C.   3. The piezoelectric vibration device according to claim 1, wherein the insulating portion is made of low melting point glass in which a filler component is uniformly distributed throughout.   The piezoelectric vibration device according to claim 3, wherein the insulating portion is formed by a sputtering method.   5. The piezoelectric vibration device according to claim 1, wherein a coefficient of thermal expansion of the insulating part is approximately or the same as that of the base and the lid.

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