JP2002299243A - Vapor growth equipment and vapor growth method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide vapor growth equipment or a vapor growth method, which enables effectively vapor growth of a uniform semiconductor film excellent in crystallinity on a substrate, when vapor growth of a large substrate or simultaneous vapor growth of a plurality of substrates is performed, and when a vapor growth temperature is set at a high temperature and vapor growth is performed, in vapor growth using a horizontal type reaction tube. SOLUTION: The vapor growth equipment has a constitution where an interval between a susceptor and a reaction tube wall part facing the susceptor is narrower than an interval in the vertical direction in a reaction tube wall between a gas supplying pot of a material gas inlet part and the upper stream side end portion of a material gas channel of the susceptor. Gas containing material gas is supplied to the horizontal-type reaction tube of the vapor growth equipment, thereby performing vapor growth.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for vapor-phase growth of a semiconductor film, and more particularly, to a method of supplying a source gas into a reaction tube so as to be substantially parallel to a substrate. A vapor growth apparatus and a vapor phase for supplying a gas containing a raw material gas from a gas introduction portion of an arranged horizontal reaction tube to efficiently vapor-grow a semiconductor film having good uniform crystallinity on a heated substrate. Regarding the growth method.

[0002]

2. Description of the Related Art In recent years, gallium nitride-based compound semiconductors have been
As elements such as light emitting diodes and laser diodes,
Demand is growing rapidly, especially in the optical communication field. As a method for producing a gallium nitride-based compound semiconductor, for example, an organic metal gas such as trimethylgallium, trimethylindium, or trimethylaluminum is used as a Group III metal source, ammonia is used as a nitrogen source, and sapphire or the like is set in a reaction tube in advance. There is known a method of forming a gallium nitride-based compound semiconductor film on a substrate by vapor-phase growth.

Further, as an apparatus for manufacturing the gallium nitride-based compound semiconductor, a susceptor for mounting a substrate, a heater for heating the substrate, and a supply direction of a raw material gas into a reaction tube are parallel to the substrate. There is a vapor phase growth apparatus comprising a horizontal reaction tube provided with a source gas inlet and a reaction gas outlet arranged as described above. In a vapor phase growth apparatus having this horizontal reaction tube, the substrate is placed on a susceptor in the reaction tube, heated by a heater, and then a gas containing a source gas is supplied from a direction parallel to the substrate, whereby a semiconductor film is formed on the substrate. Is formed by vapor-phase growth.

In such a horizontal reaction tube, the source gas diffuses due to thermal convection near the substrate and does not reach the substrate efficiently, so that a uniform and good crystallinity semiconductor film cannot be obtained or the growth rate is low. There was a problem. However, in recent years, a pressurized gas introducing portion is provided on a reaction tube wall facing the substrate, and a pressurized gas which does not affect the reaction such as a carrier gas is supplied into the reaction tube in a direction perpendicular to the substrate, thereby reducing the flow of the raw material gas. A vapor phase growth apparatus or a vapor phase growth method in which the direction of spraying onto a substrate is changed has been developed. According to this, the flow rate of the pressurized gas, the type and flow rate of the raw material gas,
It is described that a semiconductor film with good crystallinity can be obtained by appropriately controlling the temperature of the substrate according to the heating temperature.

[0005]

However, in the vapor phase growth apparatus or the vapor phase growth method described above, since the gas flows orthogonal to each other, that is, the gas containing the source gas and the pressing gas are mixed on the substrate, the gas flow There was a case where disturbance was easily generated and control was difficult. For example, when performing vapor phase growth of a large substrate or simultaneous vapor phase growth of a plurality of substrates,
It has been difficult to supply the source gas at a uniform concentration over a wide range on the substrate. Also, in the vapor phase growth using the above-mentioned trimethylgallium, trimethylindium, or trimethylaluminum as a raw material, a high temperature of 1000 ° C. or more is required as a substrate heating temperature, so that a complicated gas flow is generated on the substrate. It was difficult to control.

Therefore, the problem to be solved by the present invention is that even when performing vapor phase growth of a large substrate or simultaneous vapor phase growth of a plurality of substrates in vapor phase growth using a horizontal reaction tube, Even in the case where the vapor phase growth temperature is set to a high temperature, the vapor phase growth apparatus or the vapor phase growth apparatus which can efficiently vapor-grow a semiconductor film having good crystallinity uniformly on a substrate. It is to provide a phase growth method.

[0007]

Means for Solving the Problems As a result of intensive studies to solve these problems, the present inventors have found that in vapor phase growth using a horizontal reaction tube, the gap between the susceptor and the wall of the reaction tube facing the susceptor is reduced. The present invention was found to be able to suppress the gas flow turbulence due to thermal convection near the substrate or the diffusion of the raw material gas by using a configuration narrower than the vertical gap of the reaction tube wall between the raw material gas inlet and the susceptor. did.

That is, according to the present invention, there is provided a susceptor for mounting a substrate, a heater for heating the substrate, and a source gas arranged such that a supply direction of the source gas into the reaction tube is substantially parallel to the substrate. An apparatus for vapor-phase growth of a semiconductor film comprising a horizontal reaction tube having an introduction part and a reaction gas discharge part, wherein a gap between a susceptor and a wall of the reaction tube facing the susceptor has a gas supply port of a source gas introduction part. A vapor phase growth apparatus characterized in that the susceptor is narrower than a vertical gap in a wall of a reaction tube between upstream ends of source gas flow paths of the susceptor.

Further, according to the present invention, a substrate is placed on a susceptor in a horizontal reaction tube, the substrate is heated by a heater, and a gas containing a source gas is supplied to the substrate from a direction substantially parallel to the substrate.
A method of vapor-phase growing a semiconductor film on the substrate, wherein a gap between a susceptor and a wall of a reaction tube facing the susceptor is formed by a gas supply port of a source gas introduction unit and an upstream end of a source gas flow path of the susceptor. The gas phase growth method is characterized in that a gas containing a raw material gas is supplied into a horizontal reaction tube having a configuration narrower than a vertical gap in the wall of the reaction tube during the gas phase growth.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION In a vapor phase growth apparatus and a vapor phase growth method according to the present invention, a substrate is placed on a susceptor in a horizontal reaction tube, heated by a heater, and then a gas containing a source gas is supplied from a direction parallel to the substrate. Accordingly, the present invention is applied to a vapor phase growth apparatus and a vapor phase growth method for forming a semiconductor film on a substrate by vapor phase growth. In the vapor phase growth apparatus according to the present invention, the gap between the susceptor and the reaction tube wall facing the susceptor is perpendicular to the reaction tube wall between the gas supply port of the source gas inlet and the upstream end of the source gas flow path of the susceptor. This is a vapor phase growth apparatus configured to be narrower than the gap in the direction. Further, in the vapor phase growth method of the present invention, the gap between the susceptor and the reaction tube wall facing the susceptor may be such that the reaction tube wall between the gas supply port of the source gas introduction unit and the upstream end of the source gas flow path of the susceptor. Is a vapor phase growth method in which a gas containing a raw material gas is supplied into a horizontal reaction tube having a configuration narrower than the vertical gap in and vapor-phase grown.

In the vapor phase growth apparatus and the vapor phase growth method of the present invention, there is no particular limitation on the type, size and quantity of the substrate, or the type and flow rate of the raw material. But,
With respect to the substrate, particularly when performing vapor phase growth of a large substrate of 4 inches or more or simultaneous vapor phase growth of six substrates, gas turbulence and diffusion of source gas due to thermal convection over a wide range on the substrate can be reduced. Thus, the effect of the present invention can be sufficiently exhibited. Incidentally, examples of the type of the substrate include sapphire, SiC, bulk gallium nitride, and the like.

Regarding the kind of the raw material, particularly when performing vapor phase growth in which the heating temperature of the substrate needs to be 1000 ° C. or higher, gas turbulence and diffusion of the raw material gas due to rapid thermal convection on the substrate are reduced. The effect of the present invention can be sufficiently exhibited in that it can be reduced. As the vapor phase growth using such a raw material, trimethyl gallium, triethyl gallium, trimethyl indium, triethyl indium, trimethyl aluminum, or triethyl aluminum as a group III metal source, ammonia, monomethyl hydrazine, dimethyl hydrazine, tert-butyl hydrazine Or a vapor phase growth of a gallium nitride-based compound semiconductor using trimethylamine as a nitrogen source.

Hereinafter, the vapor phase growth apparatus of the present invention will be described in detail with reference to FIG. 1, but the present invention is not limited thereto. FIG. 1 is a vertical sectional view showing one example of the vapor phase growth apparatus of the present invention. The vapor phase growth apparatus of the present invention
As shown in FIG. 1, a substrate 2, a susceptor 3 for holding and rotating the substrate, a heater 4 for heating the substrate, and a source gas supply direction arranged in a reaction tube are substantially parallel to the substrate. And a gap between the susceptor 3 and the reaction tube wall 7 opposed to the susceptor 3. Upstream end 12 of raw gas flow path
Is a vapor phase growth apparatus configured to be narrower than the vertical gap in the reaction tube wall 8 between the two.

In the vapor phase growth apparatus according to the present invention, the gap between the susceptor and the wall of the reaction tube facing the susceptor is, on average, between the gas supply port of the source gas inlet and the upstream end of the source gas flow path of the susceptor. Of the vertical gap in the reaction tube wall between 20 and
It is 99%, preferably 30-95%. If the gap between the susceptor and the reaction tube wall facing the susceptor is less than 20% of the vertical gap between the reaction gas wall and the susceptor, the flow of the gas containing the material gas becomes too fast, There is a possibility that the source gas will not be sufficiently used for the vapor phase growth reaction and will be discharged from the reaction gas discharge part. If it exceeds 99%, the effect of suppressing the turbulence of the gas flow due to the thermal convection near the substrate or the diffusion of the source gas decreases.

In the vapor phase growth apparatus of the present invention, in order to achieve the above-described configuration, the gas supply port 11 of the raw material gas inlet and the raw material of the susceptor are usually arranged from upstream to downstream of the raw material gas flow path. At a position between the gas flow path upstream end portions 12,
The gap in the vertical direction of the reaction tube wall starts to narrow, and at the position where the susceptor is disposed (between 12 and 14), the gap between the susceptor and the reaction tube wall facing the susceptor is set to be constant. . In the vapor phase growth apparatus of FIG.
The reaction tube wall 8 between 1 and 12 is set so that both the upper reaction tube wall and the lower reaction tube wall are inclined to narrow the gap toward the downstream direction. The gap can also be set so that the gap becomes narrower in the downstream direction when one of the reaction tube walls is inclined. In such a configuration, the gap between the susceptor and the wall of the reaction tube facing the susceptor is preferably 10 to 98% of the vertical gap at the gas supply port 5 of the raw material gas introduction unit. The gap between the susceptor and the wall of the reaction tube facing the susceptor is usually 20 mm or less, preferably 10 mm or less.

In the horizontal reaction tube of the present invention, the reaction tube wall facing the susceptor is heated to a high temperature.
There is a problem that a thermal decomposition reaction of the raw material gas occurs in the vicinity thereof, and a decomposition product or a reaction product is easily deposited on the wall of the reaction tube. Therefore, in the vapor phase growth apparatus of the present invention, the reaction tube wall 7 facing the susceptor is formed as a gas-permeable microporous portion, and gas containing no raw material is introduced into the reaction tube through the microporous portion. Introduction section 9 for supply
Is preferably provided so that deposition of decomposition products or reaction products during vapor phase growth can be suppressed. Instead of the above-described configuration, the constituent material on the surface of the reaction tube wall facing the susceptor may be quartz in which decomposition products or reaction products are unlikely to precipitate.

Further, the above-described structure of the present invention can be achieved by a vapor-phase growth apparatus having a single gas supply port of a source gas introduction section, or a gas flow path of a source gas introduction section which is vertically moved by a partition plate or a nozzle. The present invention can be applied to any of the vapor deposition devices partitioned in the direction. As an example of the configuration vertically divided by the partition plate or the nozzle, the upper gas flow path of the raw material gas introduction section, trimethyl gallium, triethyl gallium, trimethyl indium, triethyl indium, trimethyl aluminum, or a gas containing triethyl aluminum As a flow path for supplying, a gas phase growth apparatus in which a lower gas flow path is a flow path for supplying ammonia, monomethylhydrazine, dimethylhydrazine, tert-butylhydrazine, or trimethylamine can be given.

Next, the vapor phase growth method of the present invention will be described in detail. The vapor phase growth method of the present invention is a method of vapor phase growing a semiconductor film on a substrate using the above-described vapor phase growth apparatus of the present invention, wherein a gap between a susceptor and a reaction tube wall facing the susceptor is a raw material. A gas containing a source gas is supplied into a horizontal reaction tube having a configuration narrower than a vertical gap in a wall of a reaction tube between a gas supply port of a gas inlet and an upstream end of a source gas flow path of a susceptor, and vapor phase growth is performed. This is a vapor growth method.

In the vapor phase growth method of the present invention, the wall of the reaction tube facing the susceptor is formed as a microporous part having air permeability, and a gas containing no raw material is supplied from the microporous part. Therefore, it is preferable to carry out vapor phase growth while suppressing the deposition of decomposition products or reaction products of the source gas. The gas containing no raw material is not particularly limited as long as it does not affect the vapor phase growth reaction. In addition to inert gases such as helium and argon, hydrogen, nitrogen and the like can be used.

In the vapor phase growth method according to the present invention, the gap between the susceptor and the wall of the reaction tube facing the susceptor is narrow, and the gas flow is increased in this region. Therefore, the vapor phase growth reaction tends to occur on the downstream side as compared with the conventional horizontal reaction tube, and the progress of the vapor phase growth reaction is between a position corresponding to the center of the susceptor and a position corresponding to the downstream end of the susceptor. Can easily be set so as to reach the peak in the region of. As a result, deposition of decomposition products or reaction products is reduced at the reaction tube wall facing the susceptor, and increased at the downstream reaction tube wall. Can be prevented.

In performing such a vapor phase growth,
Preferably, the substrate is rotated and / or revolved. In the vapor phase growth method of the present invention, the maximum heating temperature of the substrate is 600 ° C.
It can be widely applied from vapor deposition at a relatively low temperature to vapor deposition at a relatively high temperature of 1000 ° C. or higher. In the vapor phase growth method of the present invention, the pressure in the horizontal reaction tube is not only normal pressure but also reduced pressure to 0.1 MPa / cm.
It is also possible to pressure such as ^{2 G.}

In the present invention, the raw material gas means a gas serving as a supply source of an element taken into a crystal as a crystal constituent element during crystal growth. Such a source gas for vapor phase growth depends on the intended semiconductor film, and includes, for example, metal hydrides such as arsine, phosphine, and silane; organometallic compounds such as trimethylgallium, trimethylindium, and trimethylaluminum; ammonia; and hydrazine. , Alkylamines and the like are used. Further, as the gas containing the source gas, a gas supplied by diluting the source gas with a gas such as hydrogen, helium, argon, or nitrogen can be used.

[0023]

Next, the present invention will be described in detail with reference to examples, but the present invention is not limited to these examples.

Example 1 (Production of vapor phase epitaxy apparatus) The same configuration as that of the vapor phase epitaxy apparatus shown in the vertical sectional view of FIG. Part), length 1500m
m) was manufactured. The vertical gap of the reaction tube wall at the gas supply port of the raw material gas introduction section is 20
mm, the gap between the susceptor and the wall of the reaction tube facing the susceptor is 1 mm.
It was set to 4 mm.

The wall of the reaction tube between the source gas inlet and the susceptor has a structure in which both the upper reaction tube wall and the lower reaction tube wall are inclined from a position 120 mm upstream from the upstream end of the susceptor. Was set as follows. The inclination angle of the reaction tube wall with respect to the source gas flow path direction was such that the inclination angle of the upper reaction tube wall was twice the inclination angle of the lower reaction tube wall.
The susceptor and heater are circular with an outer diameter of 260 mm.
One substrate having a diameter of 2 inches was set at the center of the susceptor and five at the periphery of the susceptor at equal intervals, and six substrates could be processed simultaneously.

(Vapor Phase Growth Experiment) Using this apparatus, GaN crystal was grown on a sapphire substrate having a diameter of 2 inches as follows. After the sapphire substrate was set on the susceptor and the inside of the reaction tube was replaced with hydrogen gas, 65 L / min of hydrogen was supplied from the upper gas flow path of the raw material gas introduction part, and hydrogen gas was supplied from the microporous part as a gas containing no raw material. Was supplied at a rate of 20 L / min, the substrate was heated to 1150 ° C., and the substrate was heat-treated for 10 minutes.

Next, the reaction temperature of the substrate was lowered to 500 ° C., and the substrate was left until it was stabilized. Subsequently, a mixed gas of ammonia and hydrogen (ammonia 4
0 L / min, hydrogen 10 L / min) and hydrogen gas containing trimethylgallium (trimethylgallium 240 μmol / min, hydrogen 50 L / min) from the upper gas passage.
min). At the same time, nitrogen gas was supplied at a rate of 50 L / min through the microporous portion, and low-temperature vapor growth of GaN was performed for 5 minutes.

After the formation of the low-temperature growth layer, the supply of trimethylgallium was stopped, the temperature was raised to 1100 ° C., and the system was left until it was stabilized. Next, a hydrogen gas containing trimethylgallium (240 μmol / min of trimethylgallium, 50 L / min of hydrogen) is again supplied from the upper gas passage of the source gas introduction section, and nitrogen gas 50 is continuously supplied through the microporous section.
L / min was supplied, and GaN vapor phase growth was performed for 60 minutes. During this time, the susceptor was rotated 12 times per minute and the substrate was also rotated 36 times per minute. Thus, the vapor phase growth was repeated five times.

(Evaluation of GaN Film, etc.) After completion of the vapor phase growth, it was examined whether or not solid matter was attached to the reaction tube wall facing the substrate. As a result, no solid matter was found to adhere. Further, the substrate was taken out and the film thickness distribution of GaN was measured to evaluate the uniformity. Since the substrate is rotating during the vapor phase growth, the film thickness distribution was measured from the center to the edge of the substrate. The film thickness and the fluctuation width thereof ((maximum value-one substrate) for one substrate placed at the center of the susceptor and five substrates placed at the periphery of the susceptor
Table 1 shows the results obtained by measuring (minimum value) / average value). FIGS. 2 and 3 show the state of the film thickness distribution. Further, in order to evaluate the crystal quality and electrical characteristics of the grown film,
X-ray diffraction (half-width of (002) plane) for six substrates
Table 1 shows the results of the hole measurement (mobility). The numerical value of the peripheral substrate is an average value of five substrates, and the same applies to the second and subsequent embodiments.

Example 2 A vapor phase growth apparatus similar to that of Example 1 except that the vertical gap of the reaction tube wall at the gas supply port of the source gas introduction section in the vapor phase growth apparatus of Example 1 was changed to 18 mm. Was made. A vapor phase growth experiment, evaluation of a GaN film, and the like were performed in the same manner as in Example 1 except that this vapor phase growth apparatus was used. The results are shown in Table 1, FIG. 2, and FIG.

Example 3 A vapor phase growth apparatus similar to that of Example 1 except that the vertical gap of the reaction tube wall at the gas supply port of the source gas introduction section in the vapor phase growth apparatus of Example 1 was changed to 16 mm. Was made. A vapor phase growth experiment, evaluation of a GaN film, and the like were performed in the same manner as in Example 1 except that this vapor phase growth apparatus was used. The results are shown in Table 1, FIG. 2, and FIG.

COMPARATIVE EXAMPLE 1 In the vapor phase growth apparatus of Example 1, the vertical gap between the reaction tube wall and the gas supply port of the source gas introduction section was made the same as the gap between the susceptor and the reaction tube wall facing the susceptor. Otherwise, a vapor phase growth apparatus similar to that of Example 1 was manufactured. A vapor phase growth experiment, evaluation of a GaN film, and the like were performed in the same manner as in Example 1 except that this vapor phase growth apparatus was used. The results are shown in Table 1, FIG. 2, and FIG.

[0033]

[Table 1]

From the above results, in the vapor phase growth apparatus and the vapor phase growth method of the present invention, in the vapor phase growth of GaN requiring a temperature of 1000 ° C. or more, the position of the susceptor is influenced by the central portion or the peripheral portion. It was recognized that a GaN film having uniform and excellent electrical characteristics was obtained without any problem.

[0035]

According to the vapor phase growth apparatus and the vapor phase growth method of the present invention, in the vapor phase growth using a horizontal reaction tube, the vapor phase growth of a large substrate or the simultaneous vapor phase growth of a plurality of substrates is performed. Even if the vapor phase growth temperature is set to a high temperature and the vapor phase growth is performed, it is possible to efficiently vapor-grow a semiconductor film having good crystallinity uniformly on the substrate. Was.

[Brief description of the drawings]

FIG. 1 is a vertical sectional view showing an example of a vapor phase growth apparatus of the present invention.

FIG. 2 is a diagram showing a state of a film thickness distribution (a substrate provided at a central portion of a susceptor) in Examples and Comparative Examples.

FIG. 3 is a view showing a state of a film thickness distribution (a substrate provided around a susceptor) of an example and a comparative example.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Horizontal reaction tube 2 Substrate 3 Susceptor 4 Heater 5 Material gas introduction part 6 Reaction gas discharge part 7 Reaction tube wall part opposed to susceptor 8 Gas supply port of material gas introduction part and material gas flow path upstream end of susceptor Reaction tube wall between 9 9 Introducing section for supplying gas containing no raw material into reaction tube 10 Partition plate 11 Gas supply port of raw gas introduction section 12 End of raw gas flow path upstream side of susceptor 13 Center of susceptor 14 Susceptor Downstream end of source gas flow path

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yuji Mori 5181 Tamura, Hiratsuka-shi, Kanagawa Japan, inside the Hiratsuka Plant of Pionix Japan Co., Ltd. Within the Faculty of Engineering (72) Inventor Yoshiyasu Ishihama 5181 Tamura, Hiratsuka-shi, Kanagawa Prefecture Inside the Hiratsuka Laboratory, Japan Pionics Co., Ltd. (Reference) 4K030 AA09 AA11 AA13 BA38 CA04 CA12 EA06 FA10 GA06 JA03 JA10 KA02 LA14 5F045 AA04 AB14 AB17 AB18 AC07 AC12 AC16 AC17 AD10 AD11 AD12 AD13 AD14 AD15 AF09 BB02 CA09 DP18 EB02 EC02 EF13

Claims (14)

[Claims] A susceptor for mounting the substrate, a heater for heating the substrate, a source gas introduction unit disposed so that a direction of supply of the source gas into the reaction tube is substantially parallel to the substrate; And a gap between a susceptor and a wall of the reaction tube facing the susceptor, wherein a gap between a susceptor and a wall of the reaction tube facing the susceptor has a gas supply port of a source gas introduction unit and a gas supply port of the susceptor. A vapor phase growth apparatus characterized in that it is configured to be narrower than a vertical gap in a wall of a reaction tube between upstream end portions of source gas flow paths. The gap between the susceptor and the reaction tube wall facing the susceptor is, on average, a reaction tube wall between the gas supply port of the source gas introduction section and the upstream end of the source gas flow path of the susceptor. 20% to 99% of the vertical gap at
3. The vapor phase growth apparatus according to claim 1. 3. A vertical gap of the reaction tube wall at a position between the gas supply port of the raw material gas introduction section and the upstream end of the raw material gas flow path of the susceptor from upstream to downstream of the raw material gas flow path. 2. The vapor phase growth apparatus according to claim 1, wherein the gap between the susceptor and the wall of the reaction tube facing the susceptor is set to be constant at a position where the susceptor is disposed. 4. The vapor phase growth apparatus according to claim 3, wherein a gap between the susceptor and a wall of the reaction tube facing the susceptor is 10 to 98% of a vertical gap at a gas supply port of the source gas introduction unit. . 5. A reaction tube wall portion facing the susceptor is formed as a gas-permeable microporous portion, and an introduction portion is provided for supplying a gas containing no raw material into the reaction tube through the microporous portion. The vapor phase growth apparatus according to claim 1. 6. The vapor phase growth apparatus according to claim 1, wherein the susceptor has a configuration on which a plurality of substrates are mounted. 7. The vapor phase growth apparatus according to claim 1, wherein the susceptor is configured to mount a large substrate of 4 inches or more. 8. The vapor phase growth apparatus according to claim 1, wherein the gas flow path of the source gas introduction section is vertically divided by a partition plate or a nozzle. 9. An upper gas flow path of the raw material gas introduction section is a flow path for supplying a gas containing trimethyl gallium, triethyl gallium, trimethyl indium, triethyl indium, trimethyl aluminum, or triethyl aluminum, and a lower gas flow path. The vapor phase growth apparatus according to claim 8, wherein is a flow path for supplying ammonia, monomethylhydrazine, dimethylhydrazine, tert-butylhydrazine, or trimethylamine. 10. A substrate is placed on a susceptor in a horizontal reaction tube, the substrate is heated by a heater, a gas containing a source gas is supplied from a direction substantially parallel to the substrate, and the semiconductor film is vaporized on the substrate. In the method for phase growth, a gap between a susceptor and a reaction tube wall facing the susceptor is formed in a reaction tube wall between a gas supply port of a source gas introduction unit and an upstream end of a source gas flow path of the susceptor. A vapor phase growth method comprising supplying a gas containing a source gas into a horizontal reaction tube having a configuration narrower than a vertical gap, and performing vapor phase growth. 11. The reactor according to claim 10, wherein the wall of the reaction tube facing the susceptor is a gas-permeable microporous portion, and a gas containing no raw material is supplied from the microporous portion to perform gas phase growth. Vapor phase growth method. 12. The method according to claim 10, wherein the substrate is rotated and / or revolved and the progress of the vapor phase growth reaction is set to reach a peak in a region between a center point of the susceptor and a downstream end of the susceptor. The vapor phase growth method according to the above. 13. The vapor phase growth method according to claim 10, wherein the maximum heating temperature of the substrate is 1000 ° C. or higher. 14. The method according to claim 14, wherein the vapor phase growth is performed using trimethylgallium, triethylgallium, trimethylindium, triethylindium, trimethylaluminum, or triethylaluminum as a Group III metal source, ammonia, monomethylhydrazine, dimethylhydrazine, tert-butylhydrazine, or trimethylamine. The vapor phase growth method according to claim 10, which is a vapor phase growth of a gallium nitride-based compound semiconductor using as a nitrogen source.