JP2002313731A - Organic metal vapor growth equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide organic metal vapor growth equipment wherein the cost can be reduced and productivity can be increased without deteriorating the quality of products. SOLUTION: This organic metal vapor growth equipment is provided with organic metal material gas supplying sources 1-3, a material gas supply means 5 for introducing organic metal material gas from the supply sources 1-3, and a plurality of reactors 7, 8 wherein a film is formed by organic metal vapor growth using the organic metal material gas from the supply means 5. The supply means 5 is constituted in such a manner that the organic metal material gas can be divided and supplied to the reactors 7, 8.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a metal organic chemical vapor deposition apparatus for forming a thin film of a compound semiconductor or the like.

[0002]

2. Description of the Related Art Conventionally, MOCVD (Metal Organic Chemistry)
Metal-organic vapor phase epitaxy (M) that forms a thin film of a compound semiconductor or the like on a substrate by the ical vapor deposition method
OCVD apparatus). In recent years, in order to increase productivity, an MOCVD apparatus including a reactor capable of accommodating a plurality of large substrates has been used. FIG. 6 shows an example of a conventional metal organic chemical vapor deposition apparatus (MOCVD apparatus). In the figure, reference numerals 1 to 3 denote an organic metal storage container serving as an organic metal source gas supply source, and reference numeral 4 denotes a container 1. Carrier gas introduction line for introducing a carrier gas such as hydrogen into -3, reference numeral 35
Denotes a source gas supply line for guiding the organometallic source gas from the containers 1 to 3, and 37 denotes a reactor for forming a thin film on a substrate. In this MOCVD apparatus, the reactor 37 is capable of accommodating a plurality of large substrates, and is capable of simultaneously forming a thin film on the plurality of substrates.

In this MOCVD apparatus, since a plurality of substrates are used, it is difficult to form a uniform thin film on all of these substrates. Therefore, for the purpose of forming a uniform thin film, a shower head having a plurality of gas outlets is often used as a source gas supply head in the reactor 37. Further, a mechanism for rotating or revolving the substrate in the reactor 37 is often used.

When using this MOCVD apparatus, a carrier gas such as hydrogen gas is introduced from the carrier gas introduction line 4 to the containers 1 to 3, and the organic metal is vaporized to obtain a raw material gas containing the organic metal. Each source gas from the containers 1 to 3 is introduced into the reactor 37 through the source gas supply line 35.
In this reactor 37, a thin film is formed on a plurality of substrates by metal organic chemical vapor deposition. Usually, thin film formation is performed under reduced pressure for homogenization of the thin film. According to this MOCVD apparatus, thin films can be formed on a plurality of substrates, so that productivity can be improved.

[0005]

However, in an MOCVD apparatus having a reactor capable of accommodating a plurality of substrates,
In some cases, the composition and thickness of the formed thin film became non-uniform for each substrate, and the quality of the product was unsatisfactory. When a shower head is used as the source gas supply head, the components of the source gas are easily adsorbed on the head, and when the operation is restarted after maintenance, the source gas supply to the substrate becomes insufficient, so that a thin film to be formed is formed. The quality of the product was adversely affected. In particular, the reproducibility of doping of Mg, Zn, or the like may decrease, or the impurity concentration of the non-doped compound semiconductor may increase. In addition, when a shower head is used, it is difficult in principle to form a thin film under a pressure close to the atmospheric pressure, and it is difficult to form a film that requires a pressure as high as the atmospheric pressure. In addition, when a mechanism for rotating the substrate on its own axis is provided, the cost of the apparatus is increased due to the complicated structure of the apparatus and the susceptor for fixing the substrate being easily deteriorated. Further, when this self-revolution mechanism is used, there is a problem that the temperature control in the reactor becomes difficult, and the quality of the thin film is easily deteriorated.

The present invention has been made in view of the above circumstances, and provides a metal organic chemical vapor deposition apparatus capable of reducing costs and increasing productivity without deteriorating product quality. The purpose is to:

[0007]

According to the present invention, there is provided an organometallic vapor phase epitaxy apparatus, comprising: a source gas of an organometallic source gas; a source gas supply means for guiding the organometallic source gas from the source; A plurality of reactors for forming a film by metalorganic vapor phase growth using an organic metal source gas, so that the source gas supply means can distribute and supply the organic metal source gas to the plurality of reactors. It is characterized by comprising. In the organometallic vapor phase epitaxy apparatus of the present invention, the source gas supply means is provided with a pressure gauge for detecting the pressure of the source gas, and the pressure in the source gas supply means is determined based on the source gas pressure detected by the pressure gauge. A configuration including a flow rate adjusting means for adjusting the gas amount can be adopted. Specifically, the source gas supply means is provided with a source gas discharge means for discharging the source gas out of the system, and the flow rate adjusting means adjusts the discharge flow rate of the source gas discharge means based on the source gas pressure. A configuration that is an adjusting means can be adopted. Further, the flow rate adjusting means may be an introduction flow rate adjusting means for adjusting the flow rate of the source gas introduced into the reactor based on the source gas pressure.
Further, a carrier gas supply unit that supplies a carrier gas is connected to the source gas supply unit, and the flow rate adjustment unit is a carrier gas supply flow rate adjustment unit that adjusts a supply flow rate of the carrier gas based on the source gas pressure. It can also be. In the present invention, a plurality of organometallic source gas supply sources may be provided, and the source gas supply means may be provided with a mixer for mixing the source gases from the plurality of supply sources.

[0008]

FIG. 1 shows a first embodiment of a metal organic chemical vapor deposition apparatus (hereinafter, MOCVD apparatus) according to the present invention. In the figure, reference numerals 1 to 3 denote first to third organic metal storage containers serving as an organic metal raw material gas supply source, and reference numeral 4.
Is a carrier gas introduction line for introducing a carrier gas such as hydrogen into the containers 1 to 3, reference numeral 5 is a source gas supply line (source gas supply means) for guiding the organometallic source gas from the containers 1 to 3, and reference numeral 6 is A mixer for uniformly mixing the raw material gas from the containers 1 to 3, the carrier gas from the line 10, and the doping gas (silane) from the line 27;
Is a first and second reactor for forming a thin film on a substrate, and reference numeral 10 is a carrier gas supply line that directly guides the carrier gas from the introduction line 4 to the source gas supply line 5 without passing through the containers 1 to 3. (Carrier gas supply means), reference numeral 11 denotes a carrier gas discharge line capable of discharging the carrier gas out of the system.

The organometallic storage containers 1 to 3 serve as a supply source of an organometallic raw material gas, and are provided with a carrier gas introduction line 4.
A raw material gas containing an organic metal can be obtained by a bubbling method or a sublimation method using a carrier gas supplied from a company.

A source gas supply line 5 includes a mixer introduction line 5a for introducing a source gas, a carrier gas, and a doping gas to a mixer 6, and a mixed source gas from the mixer 6 into reactors 7 and 8.
And a mixed source gas distribution line (mixed source gas distribution means) 9. The mixed source gas distribution line 9 includes a source gas lead-out line 9a for leading the mixed source gas from the mixer 6 and a first reactor introduction line 9b for leading the mixed source gas from the lead-out line 9a to the first reactor 7. A second reactor introduction line 9c for introducing a raw material gas from the outlet line 9a to the second reactor 8 is provided.

The source gas deriving line 9a includes a line 9a
A pressure gauge P1 for detecting the pressure of the mixed raw material gas is provided. The first reactor introduction line 9b is provided with a mass flow controller M1, which is first introduction flow rate adjusting means for adjusting the flow rate of the mixed raw material gas introduced into the first reactor 7 through the line 9b. Second reactor introduction line 9
A mass flow controller M2, which is a second introduction flow rate adjusting means for adjusting the flow rate of the mixed raw material gas introduced into the second reactor 8 through the line 9c, is provided at c. Note that the mixed raw material gas distribution line may be configured so that the mixed raw material gas from the mixer 6 can be distributed to the two reactors 7 and 8. For example, the mixed raw material gas is directly guided from the mixer 6 to the first reactor 7. It is also possible to adopt a configuration including a first reactor introduction line and a second reactor introduction line for guiding the mixed raw material gas directly from the mixer 6 to the second reactor 8.

The carrier gas supply line 10 is for adding a carrier gas to the source gas, and branches off from the carrier gas introduction line 4 on the primary side (upstream side) of the containers 1 to 3. Part of the carrier gas can be directly guided to the source gas supply line 5. The carrier gas supply line 10 is provided with a mass flow controller M3 which is a carrier gas supply flow rate adjusting means for adjusting the flow rate of the carrier gas in the line 10.

The carrier gas discharge line 11 branches off from the carrier gas supply line 10 so that the carrier gas in the carrier gas supply line 10 can also be discharged outside the system.

The mixed source gas distribution line 9 is provided with a mixed source gas discharge line (source gas discharging means) 12 for guiding the mixed source gas to an exhaust line 11. The mixed source gas discharge line 12 is provided with a mass flow controller M4 which is a discharge flow rate adjusting means for adjusting the discharge flow rate of the mixed source gas. The mass flow controller M4 can adjust the mixed material gas discharge flow rate of the mixed material gas discharge line 12 based on the material gas pressure detected by the pressure gauge P1.

In FIG. 1, reference numerals 21 and 22 denote ammonia supply lines for supplying ammonia (group V source gas) to the first and second reactors 7 and 8, respectively, and reference numeral 23 denotes an ammonia for discharging ammonia to the outside of the system. The discharge lines, reference numerals 24 and 25, transfer the carrier gas to the ammonia supply line 21,
Reference numeral 26 denotes a carrier gas supply line for supplying a carrier gas to the ammonia discharge line 23, and reference numeral 27 denotes a silane supply line for supplying silane (doping gas) to the source gas supply line 5. Show. M5 to M14 indicate mass flow controllers provided on each line, and P2 to P4 indicate pressure gauges.

Hereinafter, an example of a method of using the MOCVD apparatus will be described. Organic metals such as trimethylgallium (TMG), trimethylaluminum (TMA), and trimethylindium (TMI) are stored in containers 1 to 3 in advance. A carrier gas such as hydrogen gas is introduced from the carrier gas introduction line 4 to the containers 1 to 3 via the lines 4a to 4c, and the organic metal is vaporized by a bubbling method or a sublimation method using the carrier gas. Get the gas.

The raw material gas from each of the containers 1 to 3 is supplied to a line 4
d to 4f, source gas supply line 5 (mixer introduction line 5
It is introduced into the mixer 6 through a). At the same time, the carrier gas from the carrier gas supply line 10 and the silane (doping gas) from the line 27 are also introduced into the mixer 6 through the source gas supply line 5 (mixer introduction line 5a), and these source gas, carrier gas, Silane is uniformly mixed to form a mixed raw material gas. The mixed raw material gas is divided into two by a mixed raw material gas distribution line 9 and introduced into the first and second reactors 7 and 8. That is, part of the mixed raw material gas is
The first reactor introduction line 9 via the raw material gas derivation line 9a
b to the first reactor 7, and the other part is introduced into the second reactor 8 from the second reactor introduction line 9 c via the raw gas outlet line 9 a. In the first and second reactors 7 and 8, a thin film is formed on a substrate by metal organic chemical vapor deposition using a mixed source gas.

The MOCVD apparatus of the present embodiment includes two reactors 7 and 8, and a raw material gas supply line 5 has a mixed raw material gas distribution line 9 for distributing and supplying a mixed raw material gas to the two reactors 7 and 8. So that these two reactors 7,
8, a thin film can be formed. For this reason, it is possible to eliminate the need for a shower head or a substrate revolving mechanism for the substrate without lowering the productivity. Therefore,
It is possible to prevent an increase in device cost and an increase in size of the device due to the shower head and the substrate rotation mechanism. In addition, it is possible to prevent the conditions for forming the thin film in the reactor from being uneven by the shower head or the substrate rotation mechanism, and to form a thin film having excellent quality. Therefore, it is possible to prevent a cost increase and an increase in the size of the apparatus, and efficiently form a thin film having excellent quality.

Further, since the number of substrates accommodated in one reactor can be reduced without lowering the productivity, the number of thin films formed on a large number of substrates in one reactor can be reduced. Can be made uniform. For this reason, it is possible to form a thin film that is superior in quality. Further, since a shower head can be eliminated, a thin film can be formed under a high pressure (for example, normal pressure) condition without deteriorating the quality of the thin film, and a film requiring a high pressure condition can be formed.

In this MOCVD apparatus, as described above,
The mixed source gas distribution line 9 is provided with a mixed source gas discharge line 12 for guiding the mixed source gas to the discharge line 11 and a pressure gauge P1 for detecting the pressure of the mixed source gas. A mass flow controller M4 for adjusting the flow rate of the mixed raw material gas in the discharge line 12 based on the mixed raw material gas pressure detected by the meter P1 is provided. Therefore, for example, when the pressure of the mixed raw material gas falls below the set range, the mass flow controller M
4 to reduce the gas discharge flow rate to increase the gas amount in the supply line 5, and when the gas pressure exceeds the set range, adjust the mass flow controller M4 to increase the gas discharge flow rate and increase the gas discharge flow rate in the supply line 5. An operation method in which the gas amount is reduced can be adopted. Therefore, the pressure of the mixed source gas in the mixed source gas distribution line 9 can be maintained within a certain range, and the mixed source gas can be stably supplied to the reactors 7 and 8. Therefore, the thin film forming conditions in the reactors 7 and 8 can always be optimized, and an excellent thin film can be formed.

In the present invention, the mass flow controller M4
Can be used instead of the pressure control valve. However, when a mass flow controller is used, the total gas supply flow rate measured by the mass flow controllers M3 and M5 to M7 and the mass flow controllers M1 and M2
The difference from the gas introduction flow rate to the reactors 7 and 8 measured by the above can be compared with the gas flow rate measured by the mass flow controller M4. For this reason, by appropriately adjusting the set flow rate of the mass flow controller M3 or the like, the pressure of the mixed raw material gas is reliably maintained within a certain range, and the mixed raw material gas discharged through the discharge line 12 can be minimized. Become. Therefore, the raw material cost can be reduced.

Further, since the mixer 6 is provided in the source gas supply line 5, each source gas from the containers 1 to 3 and the line 10
And the silane (doping gas) from the line 27 can be uniformly mixed. For this reason,
A uniform mixed source gas can be supplied to the reactors 7 and 8, and a uniform thin film can be formed.

FIG. 2 shows a second embodiment of the MOCVD apparatus according to the present invention. The MOCVD apparatus shown here is not provided with the mixed material gas discharge line 12 and the mass flow controller M4, but is provided with a control unit (computer) 13 instead of this, as shown in FIG.
It differs from the MOCVD apparatus of the embodiment. The control unit 13 adjusts the mass flow controllers M1 and M2 based on the pressure detected by the pressure gauge P1, and can control the flow rate of the mixed raw material gas introduced into the reactors 7 and 8. .

In this MOCVD apparatus, the mass flow controllers M1 and M2 are controlled according to the pressure of the mixed material gas in the mixed material gas distribution line 9 detected by the pressure gauge P1.
And an operation method of controlling the flow rate of the mixed raw material gas introduced into the reactors 7 and 8 can be adopted. For example, when the pressure of the mixed raw material gas falls below the set range, the mass flow controllers M1 and M2 are adjusted to reduce the gas introduction flow rate, and when the mixed raw material gas pressure exceeds the set range, the mass flow controllers M1 and M2 are adjusted. Therefore, it is possible to take an operation method of increasing the gas introduction flow rate. Therefore, the pressure of the mixed source gas introduced into the reactors 7 and 8 through the mixed source gas distribution line 9 is maintained within a certain range,
8 can always optimize the thin film forming conditions, and an excellent thin film can be formed.

FIG. 3 shows a third embodiment of the MOCVD apparatus according to the present invention. The MOCVD apparatus shown here does not include the mixed raw material gas discharge line 12 and the mass flow controller M4, and the carrier gas supply line 1
The mass flow controller M3 provided at 0 is capable of controlling the supply flow rate of the carrier gas based on the pressure detected by the pressure gauge P1.

In this MOCVD apparatus, it is possible to adopt an operation method in which the supply flow rate of the carrier gas from the carrier gas supply line 10 is adjusted according to the pressure of the mixed source gas in the mixed source gas distribution line 9. For example, when the pressure of the mixed raw material gas falls below the set range, the mass flow controller M
3, the carrier gas supply flow rate can be increased, and the mass flow controller M3 can be adjusted to reduce the carrier gas supply flow rate when the mixed raw material gas pressure exceeds the set range. Therefore, the pressure of the mixed source gas introduced into the reactors 7 and 8 through the mixed source gas distribution line 9 is maintained within a certain range, the thin film forming conditions in the reactors 7 and 8 are always optimized, and a thin film having excellent quality is formed. Can be formed. In the above-described embodiment, the MOCVD apparatus including three organic metal storage containers 1 to 3 is exemplified. However, in the present invention, the number of the organic metal storage containers is not limited thereto.
It can be arbitrary (for example, two or more). Also, the MOCVD apparatus having two reactors 7 and 8 has been illustrated,
The same effect can be obtained when the number of reactors is not limited to two but is three or more.

[0027]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The MOCVD apparatus of the present invention will be described below with reference to specific examples. (Example 1) A thin film formation test was performed using the MOCVD apparatus shown in FIG. Mass flow controllers M1 to M14
Was set as shown in Table 1. That is, after setting the set value of the gas flow rate to the value shown in the flow pattern 1,
The values shown in the flow pattern 2 were set, and then the values shown in the flow pattern 3 were set. At this time, the set value of the pressure of the mixed raw material gas is set to 0.15 MPa, and when the pressure of the mixed raw material gas measured by the pressure gauge P1 falls below this set value, the gas discharge flow rate from the discharge line 12 is reduced. An operation method that increases the gas discharge flow rate when the set value was exceeded was adopted.
FIG. 4 shows a change in the measured value of the pressure of the mixed raw material gas in the pressure gauge P1 when the gas flow rate is set as shown in Table 1. FIG. 5 shows a mass flow controller M
3 shows a change in an actually measured value of the flow rate of the mixed raw material gas introduced in FIG. The measurement of these pressures and flow rates is 3
Performed every 0 seconds.

[0028]

[Table 1]

4 and 5, the pressure of the mixed raw material gas is in the range of ± 0.001 Pa and the flow rate is ± 0.1 SL.
Since it is in the range of M, it is understood that the source gas pressure and the flow rate introduced into the reactor could be maintained almost constant.

Example 2 A thin film was formed on a sapphire substrate (outside diameter of 2 inches) on which a GaN buffer layer was formed by using the MOCVD apparatus shown in FIG. That is, the hydrogen gas is supplied to the trimethyl gallium (TM
The TMG-containing raw material gas obtained by blowing into G) was divided into two by a distribution line 9 and introduced into reactors 7 and 8, respectively. At the same time, ammonia was supplied to the reactors 7 and 8 through the supply lines 21 and 22, and silane was supplied to the reactors 7 and 8 through the supply line 27. This gives S
An i-doped GaN thin film was formed on the substrate. The growth time of Si-doped GaN was 30 minutes. The pressure condition was set to be equal to the atmospheric pressure. The set pressure of the pressure gauge P1 was 0.15 Pa. At this time, the set value of the pressure of the mixed raw material gas was set to 0.15 MPa, and when the pressure of the mixed raw material gas measured by the pressure gauge P1 became lower than the set value, the mass flow controllers M1 and M2 were adjusted to adjust the gas introduction flow rate. Was reduced and the mass flow controllers M1 and M2 were adjusted to increase the gas introduction flow rate when the set value was exceeded. The film formation by the above operation was performed 9 times.
Table 2 shows the measurement results of the film thickness, carrier density, and electron mobility of the thin film formed in each of the two reactors 7 and 8.

[0031]

[Table 2]

As shown in Table 2, in the MOCVD apparatus of the embodiment,
It can be seen that there is little variation in any of the thickness, carrier density, and mobility of the thin film, and a stable thin film can be formed.

(Embodiment 3) The M shown in FIG.
A thin film was formed using an OCVD apparatus. That is, the hydrogen gas is supplied to the TMG in the container 1 and the TMA in the container 2.
The raw material gas obtained by blowing into the reactor was mixed by a mixer 6, and the mixed raw material gas was distributed into two by a distribution line 9 and introduced into reactors 7 and 8, respectively. At the same time, the supply line 21,
Ammonia was supplied to reactors 7 and 8 through 22. Thus, a thin film of Al _x Ga ₁ -xN was formed on the substrate. The growth time of Si-doped GaN was 30 minutes. The pressure condition during the formation of the thin film was set to 0.02 MPa. At this time, the set value of the pressure of the mixed raw material gas is set to 0.15 MPa, and when the pressure of the mixed raw material gas measured by the pressure gauge P1 falls below this set value, the mass flow controller M
3 was used to increase the carrier gas supply flow rate, and when the set value was exceeded, the mass flow controller M3 was adjusted to reduce the carrier gas supply flow rate. Table 3 shows the results of examining the film thickness and composition (composition ratio of Al) of the formed Al _x Ga ₁ -xN thin film.

[0034]

[Table 3]

From Table 3, it can be seen that the thin films formed in the first and second reactors 7 and 8 are almost constant in both thickness and component composition.

Example 4 A thin film was formed on the above substrate using the MOCVD apparatus shown in FIG. That is, a raw material gas obtained by blowing hydrogen gas into TMG in the container 1 and TMA in the container 2 is mixed in the mixer 6, and the mixed raw material gas is distributed into two by the distribution line 9 to be reacted. It was introduced into vessels 7 and 8. At the same time, supply lines 21, 2
Ammonia was supplied to reactors 7 and 8 through 2. Thus, a thin film of Al _x Ga ₁ -xN was formed on the substrate.
The growth time of Si-doped GaN was 30 minutes. The pressure conditions during the formation of the thin film were set at 0.1 MPa. On this occasion,
The set value of the pressure of the mixed raw material gas is set to 0.15 MPa. When the pressure of the mixed raw material gas measured by the pressure gauge P1 falls below this set value, the mass flow controllers M1, M
2 to reduce the gas flow rate, and when the mixed raw material gas pressure exceeds the set value, the mass flow controllers M1, M
An operation method of increasing the gas flow rate by adjusting 2 was adopted. Film formation by the above operation was performed five times. Al _x G formed
Table 4 shows the results obtained by examining the thickness and composition (composition ratio of Al) of the a _1-x N thin film.

[0037]

[Table 4]

Table 4 shows that a thin film having a uniform thickness and a uniform composition could be formed.

[0039]

The metalorganic vapor phase epitaxy apparatus of the present invention has a plurality of reactors, and is configured so that the metalorganic source gas can be distributed and supplied to these reactors.
A thin film can be formed in each of a plurality of reactors, and productivity can be increased. In addition, since the shower head and the substrate rotation mechanism can be omitted without lowering the productivity, it is possible to prevent the shower head and the substrate rotation mechanism from increasing the device cost and increasing the size of the device. Further, it is possible to prevent the conditions for forming the thin film in the reactor from being uneven by the shower head or the substrate rotation mechanism, and to form a thin film having excellent quality. Therefore, a thin film having excellent quality can be efficiently formed at low cost.
In addition, the number of substrates accommodated in one reactor can be reduced without lowering the productivity, so that the thin film formation in the reactor is smaller than the case where the thin film is formed on many substrates in one reactor. The conditions can be made uniform, and a thin film excellent in quality can be formed.

A pressure gauge for detecting the pressure of the source gas is provided in the source gas supply means, and a flow rate adjusting means for adjusting the amount of gas in the source gas supply means based on the source gas pressure detected by the pressure gauge. With the configuration including the means, the pressure of the source gas can be maintained within a certain range, and the source gas can be stably supplied to the reactor. Therefore, the conditions for forming the thin film in the reactor can always be optimized, and an excellent thin film can be formed.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a first embodiment of a metal organic chemical vapor deposition apparatus of the present invention.

FIG. 2 is a configuration diagram showing a second embodiment of the metal organic chemical vapor deposition apparatus of the present invention.

FIG. 3 is a configuration diagram showing a third embodiment of the metal organic chemical vapor deposition apparatus of the present invention.

FIG. 4 is a graph showing test results.

FIG. 5 is a graph showing test results.

FIG. 6 is a configuration diagram showing an example of a conventional metal organic chemical vapor deposition apparatus.

[Explanation of symbols]

1, 2, 3 ... organic metal storage container (organic metal supply source),
5 ... source gas supply line (source gas supply means), 6 ...
Mixer, 7 first reactor, 8 second reactor, 9 mixed material gas distribution line, 10 carrier gas supply line (carrier gas supply means), 11 ... Carrier gas discharge line,
12 ... mixed material gas discharge line (raw material gas discharge means), 13 ... control unit, P1 ... pressure gauge, M1, M2 ...
Mass flow controller (introduction flow rate adjusting means), M3
・ Mass flow controller (carrier gas supply flow rate adjusting means), M4 ... Mass flow controller (discharge flow rate adjusting means)

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Akira Yamaguchi 1-16-7 Nishi-Shimbashi, Minato-ku, Tokyo F-term within Nippon Oxide Co., Ltd. 4K030 AA11 EA03 HA15 JA05 KA39 KA41 LA12 5F045 AA04 AC08 AC12 AE25 AE29 EE03 EE04 EE14 EG06

Claims (6)

[Claims] 1. An organometallic source gas supply source, a source gas supply means for guiding an organometallic source gas from the source, and a film formed by metalorganic vapor phase growth using the organometallic source gas from the supply means. A plurality of reactors to be formed, and the source gas supply means is configured to be capable of distributing and supplying an organic metal source gas to the plurality of reactors. . 2. A pressure gauge for detecting a pressure of a source gas is provided in a source gas supply means, and based on the source gas pressure detected by the pressure gauge,
2. The metal organic chemical vapor deposition apparatus according to claim 1, further comprising a flow rate adjusting means for adjusting a gas amount in the source gas supply means. 3. A source gas supply means, which is provided with a source gas discharge means for discharging a source gas out of the system, and a flow rate adjusting means for adjusting a discharge flow rate of the source gas discharge means based on the source gas pressure. 3. The metal organic chemical vapor deposition apparatus according to claim 2, wherein said apparatus is an adjusting means. 4. The organometallic vapor phase epitaxy apparatus according to claim 2, wherein the flow rate adjusting means is an introduction flow rate adjusting means for adjusting a flow rate of the source gas introduced into the reactor based on the pressure of the source gas. 5. A carrier gas supply unit for supplying a carrier gas is connected to the source gas supply unit, and the flow rate adjustment unit is a carrier gas supply flow rate adjustment unit that adjusts a supply flow rate of the carrier gas based on the source gas pressure. 3. The metal organic chemical vapor deposition apparatus according to claim 2, wherein: 6. A method according to claim 1, wherein a plurality of organic metal source gas supply sources are provided, and said source gas supply means is provided with a mixer for mixing the source gases from the plurality of supply sources. 6. The metal organic chemical vapor deposition apparatus according to claim 5.