JP2002289722A - Package for semiconductor and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package for a semiconductor using a heat sink that has no defect and can be stably supplied and is inexpensive, and to provide its manufacturing method. SOLUTION: By bonding a frame 11 consisting of metal or ceramic to the heat sink 12 that consists of an Fe-Ni-Co alloy or an Fe-Ni alloy and is partially provided with installation holes 13 and where the installation holes 13 and the contour are formed with a punching die, a cavity part 15 for accommodating the semiconductor element is formed inside the frame 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package provided with a heat sink serving as a bottom of a cavity for accommodating a semiconductor element for optical communication or high frequency, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Semiconductor devices for optical communication and high frequency are housed.
The semiconductor package used for
And metal, and the external connection terminal has a dual joint shape
In-line (Dual in Line) type and butterfly
There is a Butterfly type package and the like. An example
For example, as shown in FIG. 3, the frame is made of metal and a butterfly type
Of the semiconductor package 50 for optical communication is excellent in heat dissipation.
A heat sink 51 made of a metal member such as copper tungsten,
Metal parts such as Kovar that have similar thermal expansion coefficients to ceramic
The frame 52 made of a material is joined and a semiconductor element is mounted inside.
A cavity 53 for mounting is formed. This frame
A through hole is formed in one side surface of the body 52, and through the through hole.
Has a cavity for passing an optical signal through the cavity 53
Through a metal fixing member 54 made of a metal material such as Kovar.
It is brazed to the through hole position. In addition, other than the frame 52
A window frame-like hole is formed on the side of
(Al _Two O_Three ) Etc.
-Metallize the substrate 55 in the part that contacts the window frame-shaped hole
A pattern is formed and brazed. This fee
The through-hole board 55 is connected to the frame 52 from the cavity 53 side.
Conductor pattern 5 formed to be conductive to the outside of
6 on the outer side conductor wiring pattern 56 from outside.
Metal parts such as Kovar for electrical connection of
The external connection terminal 57 is brazed and joined in a butterfly shape.
I have.

In the semiconductor package 50, a semiconductor element for optical communication is mounted in the cavity 53, and the semiconductor element and the conductor wiring pattern 56 on the cavity 53 are connected by a bonding wire or the like, so that external connection terminals are provided. 57
And a conduction state. After welding the optical fiber member to the metal fixing member 54 using a laser such as YAG, a lid 58 made of metal, ceramic, or the like is sealed on the upper surface of the frame 52 with glass, brazing material, resin, or the like. The optical semiconductor device is formed by joining with a stopper, and is screwed to an external fixing member with a screw through the mounting hole 59.

[0004] Usually, Cu-W (porous tungsten impregnated with copper), CMC (Cu-Mo-C) are used as heat sinks of semiconductor packages for optical communication and high frequency.
u bonding plate), KV
(Fe-Ni-Co alloy, trade name "Kovar"),
A metal plate having a thermal expansion coefficient similar to that of a 42 alloy (Ni—Fe alloy) or the like and having excellent heat radiation characteristics is used. The heat radiating plate made of KV or 42 alloy is usually formed by drilling a mounting hole with a drill or the like in a plate-like member and cutting the outer shape with a dicing saw or a wire saw.

[0005]

However, the conventional semiconductor package and the method of manufacturing the same as described above have the following problems. (1) The heat sink made of KV or 42 alloy is usually manufactured by drilling the mounting holes and cutting the outer shape, so that the manufacturing period is long. Further, the manufacturing cost is high because the processing cost is high. (2) Since cutting is usually performed in a wet state, cleaning and drying are required after cutting, and the work period is prolonged and the cost is increased. (3) When a heat sink made of KV or 42 alloy is punched at once with a punching die, the thickness of the plate is large, and the distance from the outer end to the mounting hole is small, so that defects such as cracks and cracks are generated. appear. The present invention has been made in view of such circumstances,
An object of the present invention is to provide a semiconductor package using a heat sink that is inexpensive, can be supplied stably and is inexpensive, and a method for manufacturing the same.

[0006]

According to the present invention, there is provided a semiconductor package according to the present invention, comprising a frame made of metal or ceramic, and an Fe-Ni-Co alloy or an Fe-Ni alloy. A mounting hole is provided, and the mounting hole and its outer shape are joined to a heat sink formed by a punching die, so that a cavity for accommodating a semiconductor element is formed inside the frame. This makes it possible to obtain an optical communication package including a heat sink that is inexpensive, has a short manufacturing period, and is free from defects such as cracks and cracks.

A method of manufacturing a semiconductor package according to the present invention, which meets the above object, comprises joining a frame made of metal or ceramic and a heat radiating plate made of an Fe—Ni—Co alloy or an Fe—Ni alloy to form the frame. In a method for manufacturing a semiconductor package in which a cavity portion capable of accommodating a semiconductor element is formed inside a heat sink, a mounting hole is punched out with a pin type in a part of a plate-like member larger than an outer dimension of a heat sink. Is punched out with a punching die to produce a heat sink. This makes it possible to manufacture a heat sink that is inexpensive, has a short manufacturing period, and is free from defects such as cracks and cracks.

Here, it is preferable that after the mounting hole is punched out with a pin type, the outer shape of the heat sink is punched out with a punching die in a state where the pin type is inserted into the mounting hole after the punching.
Thus, even when the distance between the mounting hole of the heat sink and the outer end is small, a heat sink without defects such as cracks and cracks can be manufactured.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the accompanying drawings to provide an understanding of the present invention. Here, FIGS. 1A and 1B are a plan view and a cross-sectional view of a semiconductor package according to one embodiment of the present invention, and FIG. 2 is a view of a semiconductor package according to another embodiment of the present invention. It is a perspective view.

As shown in FIGS. 1A and 1B, a semiconductor package 10 according to an embodiment of the present invention has a rectangular shape in plan view, and has mounting holes 13 at both ends in the longitudinal direction.
And a heat radiating plate 12 made of an Fe—Ni—Co alloy, for example, KV (Kovar) or an Fe—Ni alloy, for example, 42 alloy, and a metal frame 11 are brazed and joined. A cavity 15 for mounting a semiconductor element for optical communication is formed in the inside. Heat sink 12
The mounting hole 13 and its outer shape are formed by punching with a punching die. The shortest distance between the longitudinal outer end 14 of the heat sink 12 and the outer peripheral edge of the mounting hole 13 is 40% of the thickness of the heat sink 12. That's it. Thereby, defects such as cracks and cracks due to punching do not occur in the heat sink 12.

A window frame-like hole 16 communicating with the cavity portion 15 is provided on a side surface of the frame 11 of the semiconductor package 10 opposite to the frame body 11, and a ceramic feed hole is formed on an inner peripheral wall surface of the window frame-like hole 16. The through substrate 17 is joined by brazing. The feed-through board 17 includes a conductor pattern 19 for brazing a lead frame 18 serving as an external connection terminal outside the frame body 11 into a butterfly shape, and connecting a semiconductor element by wire bonding or the like on the cavity 15 side. ing. A through-hole 20 communicating with the cavity 15 is formed in one side surface of the frame 11 to which the feed-through board 17 is not joined.
A metal fixing member 21 whose optical axis is aligned with the tip of the optical fiber is inserted and joined.

Next, a method of manufacturing the semiconductor package 10 according to one embodiment of the present invention will be described. Cutting metal lumps such as KV, 42 alloy, etc., whose thermal expansion coefficients are similar to those of ceramics, or cutting pipes into circular sections and pressing and bending them.
A substantially rectangular window frame-shaped hole 16 communicating with the cavity portion 15 is formed on each of two opposing side surfaces of the four side surfaces.
A substantially circular through-hole 20 communicating with the cavity 15 is formed on one of the two side surfaces on which the 6 is not formed, and the frame 11 is formed.

On the other hand, a ceramic excellent in dissipating heat generated from a semiconductor element and a Fe—Ni alloy having a thermal expansion coefficient similar to that of a ceramic are used.
The heat radiating plate 12 made of a metal plate of a Co-based alloy or an Fe-Ni alloy is formed. The forming process is as follows. Fe-Ni-Co based alloy, for example, KV (trade name "K
ovar ") or a plate member made of an Fe-Ni alloy, for example, 42 alloy and having a thickness of, for example, about 1.5 mm and a larger outer dimension of about 30 mm × 13 mm. Next, mounting holes 13 are formed on both sides in the longitudinal direction of the plate-like member by punching with a pin type having a pin diameter equivalent to the hole diameter. Next, the heat sink 12 is manufactured by punching out the outer shape with a punching die comparable to the product outer size.

After the mounting holes 13 of the heat sink 12 are punched out with a pin type, the pin type is
It is preferable to form the heat radiating plate 12 by punching the outer shape with a punching die in a state of being inserted into the heat sink 3. This allows
Even when the mounting hole 13 is slightly separated from the outer end 14 of the heat radiating plate 12 (for example, a distance of 40% or more of the thickness of the heat radiating plate is sufficient), the mounting hole 13 and the outer end 1 may be used.
The heat radiating plate 12 can be formed without generating a defect such as a crack or a crack between the radiating plate 12 and the heat radiating plate 12.

After the frame 11 and the radiator plate 12 are plated with Ni, a high-temperature brazing material such as an Ag-Cu brazing material is sandwiched between the joints, heated, and brazed to join the light to the inside. A cavity portion 15 for mounting a semiconductor device such as a communication laser diode or a light emitting diode is formed.

The feed-through substrate 17 joined to the window frame-like hole 16 is formed by forming a conductor pattern on each ceramic green sheet forming a ceramic such as alumina as an insulator with a high melting point metal such as tungsten or molybdenum. A laminate formed by laminating ceramic green sheets is formed by firing. One of the conductor patterns formed on the feed-through board 17 is in contact with the window frame-shaped hole 16 of the feed-through board 17 in order to fit the feed-through board 17 into the window frame-shaped hole 16 and to perform brazing. After being formed on the outer peripheral portion and subjected to Ni plating, a high-temperature brazing material such as an Ag-Cu brazing material is sandwiched between the joints and heated to be brazed. The conductor pattern other than the above forms the conductor pattern 19 for conduction between the inside and the outside of the frame 11. And the frame 11
A lead frame 18 serving as an external connection terminal is abutted on the outer conductor pattern 19 in a butterfly shape.
Brazing with high-temperature brazing material such as brazing material. The conductor pattern 19 on the side of the cavity 15 is used for connecting the semiconductor element with a bonding wire or the like. In the case of brazing with a high-temperature brazing material such as the above-described Ag-Cu brazing material, there are cases in which the respective joints are heat-joined together at one time, and cases in which the heat-joining is performed a plurality of times.

Then, a metal fixing member 21 for aligning the optical axis of the optical fiber is inserted into the through hole 20 of the frame 11,
The semiconductor package 10 for optical communication is manufactured by heating and brazing with a low-temperature brazing material between the frame 11 and the frame body 11.

Next, a semiconductor package 10a according to another embodiment of the present invention will be described. As shown in FIG. 2, the semiconductor package 10 a includes a ring-shaped frame 1.
1a is made of ceramic and is manufactured by laminating and firing ceramic green sheets. It has a rectangular shape in a plan view, and has mounting holes 13 at both ends in the longitudinal direction.
A heat sink 12 made of a Ni-Co alloy, for example, KV, or an Fe-Ni alloy, for example, 42 alloy;
a is joined by brazing via a metallized pattern formed on the back surface side, and a cavity portion 15a for mounting a high-frequency semiconductor element is formed inside. The heat radiating plate 12 is, like the semiconductor package 10,
The mounting hole 13 and its outer shape are formed by punching with a punching die.

This high-frequency semiconductor package 10a
A lead 23 made of KV, 42 alloy, or the like for connecting to the outside via a conductor pattern 22 formed on the front surface side is brazed to the ring-shaped ceramic frame 11a. After the heat sink 12, the frame 11a, and the lead 23 are brazed, the metal surface is plated with Ni or Au, and after the high frequency semiconductor element is mounted in the cavity 15a, it is air-sealed with resin or the like. Hermetically sealed.

Next, a method of manufacturing a semiconductor package 10a according to another embodiment of the present invention will be described. In the semiconductor package 10a, the frame 11a is made of ceramic,
For example, one ceramic green sheet such as alumina
It is manufactured by laminating or firing a plurality of sheets. The ceramic green sheet is obtained by adding an appropriate amount of a sintering aid such as magnesia, silica, and calcia to alumina powder, a plasticizer such as dioxyl phthalate, a binder such as an acrylic resin, and toluene, xylene, and alcohols. , And kneaded thoroughly, defoamed and had a viscosity of 2.
A slurry of 000 to 40000 cps is prepared, and a roll-shaped sheet having a thickness of, for example, 0.25 mm is formed by a doctor blade method or the like, and cut into an appropriate size to prepare a rectangular sheet.

Next, a conductor pattern 22 is screen-printed on the surface of the ceramic green sheet using a refractory metal such as tungsten or molybdenum, and punched into a ring to form a space for obtaining the cavity 15a.
The frame 11a is formed by firing in a reducing atmosphere at 550 ° C. Further, in order to obtain the required height of the ring-shaped ceramic frame 11a, a plurality of ceramic green sheets may be formed by lamination. The material of the ceramic is not particularly limited, and ceramics such as alumina, aluminum nitride, and low-temperature fired glass ceramic can be used. This frame 11a is also provided with a conductor pattern on the back surface thereof in contact with the heat radiating plate 12, so that a high-temperature brazing material,
For example, it is joined to the heat sink 12 with an Ag-Cu brazing material. Also, the conductor pattern 22 formed on the front surface side has, for example, A
The lead 23 is joined with a g-Cu brazing material. The semiconductor package 1 on which the high-frequency semiconductor element is mounted.
The heat radiating plate 12 used for Oa is manufactured by the same method as the method of forming the heat radiating plate 12 of the semiconductor package 10 according to the above embodiment.

[0022]

According to the first aspect of the present invention, there is provided a semiconductor package.
Since it has a mounting hole and a radiator plate whose outer shape is punched by a punching die, it is possible to obtain a semiconductor package for optical communication having a radiator plate that is inexpensive, has a short production period, and has no defects such as cracks and cracks. it can.

According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor package, wherein a mounting hole is punched in a part of a plate-like member larger than the outer size of the heat sink with a pin type, and then the outer shape is punched. Since the heat sink is manufactured by punching, a semiconductor package having a heat sink that is inexpensive, has a short manufacturing period, and is free from defects such as cracks and cracks can be manufactured.

According to a third aspect of the present invention, in the method of manufacturing a semiconductor package, the outer shape of the heat radiating plate is punched out after the mounting hole is punched with a pin type and the pin type is inserted into the mounting hole after the punching. Since the die is punched out, a heat sink having no defects such as cracks and cracks can be manufactured even when the distance between the mounting hole of the heat sink and the outer end is small.

[Brief description of the drawings]

FIGS. 1A and 1B are a plan view and a cross-sectional view, respectively, of a semiconductor package according to an embodiment of the present invention.

FIG. 2 is a perspective view of a semiconductor package according to another embodiment of the present invention.

FIG. 3 is a perspective view of a semiconductor package according to a conventional example.

[Explanation of symbols]

10, 10a: semiconductor package, 11, 11a: frame, 12: heat sink, 13: mounting hole, 14: outer end,
15, 15a: cavity portion, 16: window frame-like hole, 17:
Feedthrough board, 18: lead frame, 19, 2
2: conductor pattern, 20: through hole, 21: metal fixing member, 23: lead

Claims (3)

[Claims] 1. A frame made of metal or ceramic;
e-Ni-Co-based alloy or Fe-Ni alloy, a part of which is provided with a mounting hole, and the mounting hole is joined to a heat sink formed by a punching die to form a semiconductor element. A semiconductor package, wherein a cavity portion for housing is formed inside the frame. 2. A frame made of metal or ceramic;
A method of manufacturing a semiconductor package, comprising joining a heat radiating plate made of an e-Ni-Co-based alloy or an Fe-Ni alloy to form a cavity capable of accommodating a semiconductor element inside the frame body. A method for manufacturing a semiconductor package, characterized in that a mounting hole is punched in a part of a plate-like member having a size larger than a dimension by a pin type, and then the outer shape is punched by a punching die to manufacture the heat sink. 3. The method for manufacturing a semiconductor package according to claim 2, wherein after the mounting hole is punched out with the pin type, the heat radiation is performed in a state where the pin type is inserted into the mounting hole after punching. A method for manufacturing a semiconductor package, comprising punching an outer shape of a plate with the punching die.