JP2002289081A - Electrostatic microrelay and radio device and measuring device using the same - Google Patents

Electrostatic microrelay and radio device and measuring device using the same

Info

Publication number
JP2002289081A
JP2002289081A JP2001089900A JP2001089900A JP2002289081A JP 2002289081 A JP2002289081 A JP 2002289081A JP 2001089900 A JP2001089900 A JP 2001089900A JP 2001089900 A JP2001089900 A JP 2001089900A JP 2002289081 A JP2002289081 A JP 2002289081A
Authority
JP
Japan
Prior art keywords
substrate
movable
contact
fixed
electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001089900A
Other languages
Japanese (ja)
Other versions
JP3651404B2 (en
JP2002289081A5 (en
Inventor
Tomonori Seki
知範 積
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Corp
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corp, Omron Tateisi Electronics Co filed Critical Omron Corp
Priority to JP2001089900A priority Critical patent/JP3651404B2/en
Priority to TW091105215A priority patent/TW550616B/en
Priority to KR10-2002-0015990A priority patent/KR100455949B1/en
Priority to EP02252164.5A priority patent/EP1246216B1/en
Priority to CNB021082308A priority patent/CN1234144C/en
Publication of JP2002289081A publication Critical patent/JP2002289081A/en
Publication of JP2002289081A5 publication Critical patent/JP2002289081A5/ja
Application granted granted Critical
Publication of JP3651404B2 publication Critical patent/JP3651404B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00Electrostatic relays; Electro-adhesion relays
    • H01H59/0009Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00Electrostatic relays; Electro-adhesion relays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00Electrostatic relays; Electro-adhesion relays
    • H01H59/0009Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H01H2059/0063Electrostatic relays; Electro-adhesion relays making use of micromechanics with stepped actuation, e.g. actuation voltages applied to different sets of electrodes at different times or different spring constants during actuation

Abstract

PROBLEM TO BE SOLVED: To obtain the suitable contact separation force excellent in a high frequency characteristic with a simple and small-size structure that can be easily manufactured with low cost. SOLUTION: Signal lines 5a, 5b formed on a fixed substrate 1 are arranged on the same line. A movable substrate 2 is elastically supported on the fixed substrate 1 through a beam part 11 arranged in two places of point symmetry positions by using a movable contact 16 as a center point. The part facing to the signal lines 5a, 5b is removed from the movable substrate 2. The movable contact is elastically supported on two places orthogonal to the line where the signal lines 5a, 5b are arranged as well as not facing to the signal lines 5a, 5b. A pair of projections 17 are formed in point symmetry to the movable contact 16 as a center on a position attaching to either of the substrates 1, 2 that faces first.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電極間に発生する
静電引力に基づいて駆動することにより、信号線を開閉
する静電マイクロリレー、並びに、該静電マイクロリレ
ーを利用した無線装置及び計測装置に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic microrelay that opens and closes a signal line by being driven based on an electrostatic attraction generated between electrodes, a radio device using the electrostatic microrelay, and a radio device using the electrostatic microrelay. It relates to a measuring device.

【0002】[0002]

【従来の技術】従来、静電マイクロリレーとして、例え
ば、特開2000−164104号公報や特開2000−113792号公報
に開示のものがある。
2. Description of the Related Art Conventionally, as an electrostatic micro relay, for example, there are those disclosed in JP-A-2000-164104 and JP-A-2000-113792.

【0003】前者では、電極間に電圧を印加して静電引
力を発生させ、可動基板を駆動することにより、可動接
点を固定接点に閉成し、固定基板上に並設した信号線を
互いに電気接続する。可動基板には、可動接点の両側に
スリットが形成され、又、下面には4箇所に凸部が形成
されることにより、接点開離力が高められている。
[0003] In the former, a movable contact is closed to a fixed contact by applying a voltage between the electrodes to generate an electrostatic attraction and drive the movable substrate, and the signal lines arranged on the fixed substrate are mutually connected. Make an electrical connection. Slits are formed on both sides of the movable contact on the movable substrate, and projections are formed at four locations on the lower surface, thereby increasing the contact separating force.

【0004】後者では、固定基板上に可動基板を2箇所
で弾性支持し、固定基板上に信号線を同一直線上に設
け、その両側に配設した固定電極を高周波GND電極と
兼用している。
In the latter, a movable substrate is elastically supported at two positions on a fixed substrate, signal lines are provided on the fixed substrate on the same straight line, and fixed electrodes disposed on both sides thereof are also used as high-frequency GND electrodes. .

【0005】[0005]

【発明が解決しようとする課題】しかしながら、前者で
は、信号線が並設されているため、高周波信号の開閉に
は適さない。凸部は、接点閉成前に対向する基板に当接
するが、その位置は動作特性を高めるのに最も適した位
置とは言えない。
However, the former is not suitable for opening and closing high-frequency signals because the signal lines are arranged in parallel. The protrusion contacts the opposing substrate before closing the contact, but its position is not the most suitable position for improving the operation characteristics.

【0006】一方、後者では、高周波信号の開閉には適
しているが、接点開離力を高めるための凸部等の構成が
考慮されていない。単に、前者の凸部を採用するだけで
は、その凸部を設けるのに最適な位置が特定されていな
い以上、所望の動作特性を得ることは困難である。
On the other hand, the latter is suitable for opening and closing high-frequency signals, but does not take into account the configuration of a convex portion or the like for increasing the contact separating force. It is difficult to obtain desired operating characteristics by simply adopting the former convex portion, since an optimal position for providing the convex portion is not specified.

【0007】そこで、本発明は、安価で容易に製作でき
る簡単かつ小型の構造で、しかも適切な接点開離力を得
ることのできる静電マイクロリレー、並びに、該静電マ
イクロリレーを利用した無線装置及び計測装置を提供す
ることを課題とする。
Therefore, the present invention provides an electrostatic microrelay that has a simple and small structure that can be easily manufactured at low cost and that can obtain an appropriate contact separating force, and a radio using the electrostatic microrelay. It is an object to provide a device and a measuring device.

【0008】[0008]

【課題を解決するための手段】本発明は、前記課題を解
決するための手段として、固定基板の固定電極と、固定
基板に梁部を介して支持した可動基板の可動電極との間
に発生させる静電引力に基いて可動基板を駆動し、固定
基板に形成した2つの信号線にそれぞれ設けた固定接点
に、前記可動基板に絶縁膜を介して形成した可動接点を
接離することにより、前記信号線を電気的に開閉するよ
うにした静電マイクロリレーにおいて、前記梁部は、前
記可動接点を中心とする点対称の位置2個所で、前記可
動基板を弾性支持し、前記信号線は、一端部の各固定接
点が所定間隔で隣接するように、固定基板上の同一直線
上に配設し、前記可動基板は、少なくとも信号線に対向
する部分を除去され、前記可動接点を、前記信号線が配
設される直線に直交し、かつ、前記信号線に対向しない
2箇所で弾性支持し、前記基板のいずれか一方に、接点
閉成後、最初に対向する基板に当接する部分に、一対の
凸部を、前記可動接点を中心として点対称に形成したも
のである。
According to the present invention, there is provided, as a means for solving the above-mentioned problems, a method which is performed between a fixed electrode of a fixed substrate and a movable electrode of a movable substrate supported on the fixed substrate via a beam. By driving the movable substrate based on the electrostatic attraction to be applied, by moving the movable contact formed through the insulating film on the movable substrate to the fixed contact provided on each of the two signal lines formed on the fixed substrate, In the electrostatic microrelay configured to electrically open and close the signal line, the beam portion elastically supports the movable substrate at two point-symmetric positions around the movable contact, and the signal line is The fixed contacts on one end are arranged on the same straight line on the fixed substrate so as to be adjacent to each other at a predetermined interval, and the movable substrate has at least a portion facing a signal line removed, and Directly on the straight line where the signal line is And elastically supported at two places not opposed to the signal line, and a pair of convex portions are provided on one of the substrates at a portion that first comes into contact with the opposed substrate after the contact is closed. Are formed point-symmetrically with respect to the center.

【0009】この構成により、高周波信号の開閉に適し
た構成であるにも拘わらず、接点開離力を、静電引力の
変化に対応させて2段階で切り替えることができる。つ
まり、静電引力の弱い範囲では、凸部が対向する基板に
当接せず、可動基板は静電引力に従って容易に変形す
る。そして、静電引力が強い範囲では、凸部が対向する
基板に当接することにより可動基板の弾性力が大きくな
る。しかも、凸部は、接点閉成後、最初に対向する基板
に当接する部分に設けられている。したがって、静電引
力曲線に対して最も適した位置で、可動基板の可動接点
側の弾性力を変化させることができ、接点開離性を向上
させることが可能となる。
With this configuration, the contact opening force can be switched in two stages in accordance with the change in the electrostatic attraction, although the structure is suitable for opening and closing high-frequency signals. That is, in the range where the electrostatic attraction is weak, the convex portion does not come into contact with the opposing substrate, and the movable substrate is easily deformed according to the electrostatic attraction. Then, in a range where the electrostatic attraction is strong, the elastic force of the movable substrate is increased by the projections abutting on the opposing substrate. In addition, the projection is provided at a portion that first comes into contact with the opposing substrate after the contact is closed. Therefore, the elastic force on the movable contact side of the movable substrate can be changed at the position most suitable for the electrostatic attractive force curve, and the contact opening property can be improved.

【0010】前記基板のいずれか一方に、凸部が対向す
る基板に当接した後、さらに対向する基板に当接する部
分に、順次配設すると、凸部が対向する基板に当接する
毎に、可動接点側の弾性力が大きくなって静電引力曲線
に沿わせることができるので、適切な接点開離力を得る
ことが可能となる点で好ましい。
[0010] After the convex portion contacts one of the substrates, the convex portion abuts on the opposing substrate. Then, the convex portion abuts on the opposing substrate. Since the elastic force on the movable contact side increases and can follow the electrostatic attraction curve, it is preferable in that an appropriate contact opening force can be obtained.

【0011】前記凸部は絶縁材料で構成すればよい。The projection may be made of an insulating material.

【0012】前記基板のうち、少なくとも前記凸部が接
離する部分から電極を除去すると、凸部と対向する電極
との間に有機物等が付着することがなく、長期に亘って
設計通りの安定した動作特性を得ることができる点で好
ましい。
When the electrode is removed from at least the portion of the substrate at which the convex portion comes into contact with / separates from the convex portion, an organic substance or the like does not adhere between the convex portion and the electrode facing the convex portion. This is preferable in that the operating characteristics described above can be obtained.

【0013】なお、前記構成の静電マイクロリレーは、
無線装置や計測装置等の高周波信号を取り扱う機器に於
ける接点の開閉に適している。
Incidentally, the electrostatic microrelay having the above-mentioned structure is
It is suitable for opening and closing contacts in devices that handle high-frequency signals, such as wireless devices and measuring devices.

【0014】[0014]

【発明の実施の形態】以下、本発明に係る実施形態を添
付図面に従って説明する。図1及び図2は、本実施形態
に係る静電マイクロリレーを示す。この静電マイクロリ
レーMRは、固定基板1の上面に可動基板2を設けた構
成である。
Embodiments of the present invention will be described below with reference to the accompanying drawings. 1 and 2 show an electrostatic micro relay according to the present embodiment. The electrostatic micro relay MR has a configuration in which a movable substrate 2 is provided on an upper surface of a fixed substrate 1.

【0015】固定基板1は、ガラス基板3の上面に固定
電極4及び信号線5a,5bを形成したものである。固
定電極4の表面は絶縁膜6で被覆されている。信号線5
a,5bは、同一直線上に配置され、ガラス基板3の中
央部に所定間隔で隣接する固定接点7a,7bを有して
いる。信号線5a,5bは接続パッド8a,8bにそれ
ぞれ接続されている。また、信号線5bの側方には、配
線パターン9aを介して接続パッド8cが形成されてい
る。この配線パターン9a及び接続パッド8cには、可
動基板2の可動電極12が電気接続される。固定電極4
には、電圧印加用の接続パッド8dと、GND接続され
る接続パッド8eとが形成されている。接続パッド8e
は、信号線5a,5bで高周波信号を伝達させる場合に
信号の漏れを防止する役割を果す。
The fixed substrate 1 has a fixed electrode 4 and signal lines 5a and 5b formed on an upper surface of a glass substrate 3. The surface of the fixed electrode 4 is covered with an insulating film 6. Signal line 5
a and 5b are arranged on the same straight line, and have fixed contacts 7a and 7b adjacent to the center of the glass substrate 3 at a predetermined interval. The signal lines 5a and 5b are connected to the connection pads 8a and 8b, respectively. A connection pad 8c is formed on the side of the signal line 5b via a wiring pattern 9a. The movable electrode 12 of the movable substrate 2 is electrically connected to the wiring pattern 9a and the connection pad 8c. Fixed electrode 4
Are formed with connection pads 8d for voltage application and connection pads 8e to be connected to GND. Connection pad 8e
Plays a role of preventing signal leakage when transmitting high-frequency signals through the signal lines 5a and 5b.

【0016】可動基板2は、図3に示すように、前記固
定基板1の上面に立設される支持部10から側方に延在
する2本の第1梁部11に可動電極12を均等に支持し
たものである。可動電極12は、第1梁部11、支持部
10、及び、固定基板1の上面に設けたプリント配線9
aを介して接続パッド8cに電気接続されている。可動
電極12の中央部には一対の第2梁部13によって接点
台14が弾性支持されている。接点台14の下面には、
絶縁膜15を介して可動接点16が設けられている。可
動接点16は、前記固定接点7に接離して信号線5a,
5bを開閉する。また、可動電極12の下面には、可動
接点16を中心として点対称の位置、詳しくは、接点閉
成後、可動電極12が最初に固定電極4に当接する位置
に凸部17がそれぞれ形成されている。これにより、静
電引力が作用して可動基板2が撓むと、接点閉成前に、
必ず凸部17が固定基板1に当接する。そして、当接後
の開離力増分とそれに伴う接触力減分の割合が理想的な
状態になる。また、凸部17は、固定基板1への当接
時、可動電極12と固定電極4の距離が、離間した固定
基板1と可動基板2の間隔の1/3以下となるように形
成されている。これにより、凸部17が固定基板1に当
接した時点で、静電引力が急激に大きくなり、凸部17
の存在に拘わらず、確実に固定電極4に可動電極12を
吸着させることが可能である。
As shown in FIG. 3, the movable substrate 2 is provided with a movable electrode 12 uniformly on two first beam portions 11 extending laterally from a support portion 10 erected on the upper surface of the fixed substrate 1. This is what we support. The movable electrode 12 includes the first beam portion 11, the support portion 10, and the printed wiring 9 provided on the upper surface of the fixed substrate 1.
a, and is electrically connected to the connection pad 8c. A contact base 14 is elastically supported by a pair of second beams 13 at the center of the movable electrode 12. On the lower surface of the contact stand 14,
A movable contact 16 is provided via an insulating film 15. The movable contact 16 is brought into contact with and separated from the fixed contact 7 and the signal line 5a,
Open and close 5b. On the lower surface of the movable electrode 12, projections 17 are respectively formed at positions symmetrical with respect to the point around the movable contact 16, more specifically, at positions where the movable electrode 12 first contacts the fixed electrode 4 after the contact is closed. ing. As a result, when the movable substrate 2 bends due to the electrostatic attraction, before the contact is closed,
The projection 17 always comes into contact with the fixed substrate 1. Then, the separation force after contact and the rate of decrease in contact force associated therewith become an ideal state. The projection 17 is formed such that the distance between the movable electrode 12 and the fixed electrode 4 at the time of contact with the fixed substrate 1 is equal to or less than 1 / of the distance between the fixed substrate 1 and the movable substrate 2 that are separated. I have. Thereby, at the time when the convex portion 17 comes into contact with the fixed substrate 1, the electrostatic attraction suddenly increases, and the convex portion 17
Irrespective of the presence of, the movable electrode 12 can be surely adsorbed to the fixed electrode 4.

【0017】ところで、前記凸部17は、他の部分(可
動電極12)に比べて対向する固定電極4に接近してい
る。このため、静電引力が大きくなって電界が集中す
る。そして、周囲に有機物等の異物が存在すれば、この
異物は電界の集中する凸部17に引き寄せらて付着す
る。この場合、凸部17の高さが変化して動作特性が不
安定となる恐れがある。このため、図2に示すように、
凸部17に対向する部分には固定電極4を除去した非電
極部18が形成されている。但し、前記凸部17を絶縁
物、例えば酸化膜で形成すれば、発生する静電引力が抑
制されるので、前記非電極部18は必ずしも必要ではな
い。また、前記凸部17を、例えば半円柱状に形成すれ
ば、電界集中を抑制でき、異物を引き寄せにくい構造と
することができる。
Incidentally, the convex portion 17 is closer to the fixed electrode 4 facing the other portion (movable electrode 12). For this reason, the electrostatic attraction increases and the electric field concentrates. If there is a foreign substance such as an organic substance in the surroundings, the foreign substance is attracted to and adheres to the convex portion 17 where the electric field is concentrated. In this case, there is a possibility that the operating characteristics become unstable due to a change in the height of the convex portion 17. Therefore, as shown in FIG.
A non-electrode portion 18 from which the fixed electrode 4 is removed is formed in a portion facing the projection 17. However, if the convex portion 17 is formed of an insulator, for example, an oxide film, the generated electrostatic attraction is suppressed, and thus the non-electrode portion 18 is not necessarily required. Further, when the convex portion 17 is formed in, for example, a semi-cylindrical shape, the electric field concentration can be suppressed, and a structure in which a foreign substance is not easily attracted can be obtained.

【0018】続いて、前記構成の静電マイクロリレーM
Rの製造方法を説明する。
Subsequently, the electrostatic micro relay M having the above configuration
A method for manufacturing R will be described.

【0019】まず、図4(a)に示すパイレックス(登
録商標)等のガラス基板3に図4(b)に示すように固
定電極4、固定接点7a,7b(ここでは、7aのみ図
示)を形成する。また同時に、図4には図示しないプリ
ント配線9a、接続パッド8a等を形成する。そして、
前記固定電極4に絶縁膜6を形成することにより、図4
(c)に示す固定基板1が完成する。なお、前記絶縁膜
6として比誘電率3〜6のシリコン酸化膜あるいは比誘
電率7〜8のシリコン窒化膜を用いれば、大きな静電引
力が得られ、接触力を増加させることができる。
First, as shown in FIG. 4B, a fixed electrode 4 and fixed contacts 7a and 7b (only 7a is shown) are placed on a glass substrate 3 such as Pyrex (registered trademark) shown in FIG. Form. At the same time, printed wiring 9a, connection pads 8a, etc., not shown in FIG. 4 are formed. And
By forming an insulating film 6 on the fixed electrode 4, FIG.
The fixed substrate 1 shown in (c) is completed. If a silicon oxide film having a relative dielectric constant of 3 to 6 or a silicon nitride film having a relative dielectric constant of 7 to 8 is used as the insulating film 6, a large electrostatic attraction can be obtained and the contact force can be increased.

【0020】一方、図4(d)に示すように、上面側か
らシリコン層101,酸化シリコン層102及びシリコ
ン層103からなるSOIウエハ100の下面に、接点
間ギャップを形成するため、例えば、シリコン酸化膜を
マスクとするTMAHによるウェットエッチングを行
い、図4(e)に示すように、下方側に突出する支持部
10と凸部17とを形成する。そして、図4(f)に示
すように、絶縁膜15を設けた後、可動接点16を形成
する。
On the other hand, as shown in FIG. 4D, in order to form a contact gap on the lower surface of the SOI wafer 100 composed of the silicon layer 101, the silicon oxide layer 102 and the silicon layer 103 from the upper surface side, for example, silicon By performing wet etching using TMAH using the oxide film as a mask, as shown in FIG. 4E, a support portion 10 and a convex portion 17 protruding downward are formed. Then, as shown in FIG. 4F, after the insulating film 15 is provided, the movable contact 16 is formed.

【0021】次いで、図4(g)に示すように、前記固
定基板1に前記SOIウエハ100を陽極接合で接合一
体化する。そして、図4(h)に示すように、SOIウ
エハ100の上面をTMAH,KOH等のアルカリエッ
チング液で酸化膜である酸化シリコン層102までエッ
チングして薄くする。さらに、フッ素系エッチング液で
前記酸化シリコン層102を除去して、図4(i)に示
すようにシリコン層103すなわち可動電極12を露出
させる。そして、RIE等を用いたドライエッチングで
型抜きエッチングを行い、第1,第2梁部11,13を
切り出し、可動基板2が完成する。なお、固定基板1は
ガラス基板3に限らず、少なくとも上面を絶縁膜6で被
覆した単結晶シリコン基板で形成してもよい。
Next, as shown in FIG. 4 (g), the SOI wafer 100 is bonded and integrated to the fixed substrate 1 by anodic bonding. Then, as shown in FIG. 4H, the upper surface of the SOI wafer 100 is etched down to a silicon oxide layer 102 as an oxide film with an alkaline etchant such as TMAH or KOH. Further, the silicon oxide layer 102 is removed with a fluorine-based etchant to expose the silicon layer 103, that is, the movable electrode 12, as shown in FIG. Then, die cutting etching is performed by dry etching using RIE or the like, and the first and second beam portions 11 and 13 are cut out to complete the movable substrate 2. Note that the fixed substrate 1 is not limited to the glass substrate 3 and may be formed of a single crystal silicon substrate having at least an upper surface covered with an insulating film 6.

【0022】次に、前記構成の静電マイクロリレーMR
の動作について図5の模式図を参照して説明する。
Next, the electrostatic micro relay MR having the above configuration
Will be described with reference to the schematic diagram of FIG.

【0023】両電極間に電圧を印加せず、静電引力を発
生させていない状態では、図5(a)に示すように、第
1梁部11は弾性変形せず、支持部10から水平に延び
た状態を維持するので、可動基板2は固定基板1と所定
間隔で対向する。したがって、可動接点16は、両固定
接点7a,7bから開離している。
In a state where no voltage is applied between the two electrodes and no electrostatic attraction is generated, the first beam portion 11 is not elastically deformed as shown in FIG. The movable substrate 2 faces the fixed substrate 1 at a predetermined interval. Therefore, the movable contact 16 is separated from the fixed contacts 7a and 7b.

【0024】ここで、両電極間に電圧を印加して静電引
力を発生させると、第1梁部11が弾性変形し、可動基
板2が固定基板1に接近する。これにより、図5(b)
に示すように、凸部17が固定基板1に当接する。前記
静電引力は、図6に示すように、電極間距離が小さくな
るに従って増加する傾向にある。そして、凸部17が固
定基板1に当接するまで接近すると、両電極4,12間
に作用する静電引力は急激に増大するように設定してい
る。したがって、可動基板2は、凸部17の周囲をも部
分的に弾性変形させることにより、可動電極12は固定
電極4に吸着される。この結果、図5(c)に示すよう
に、可動接点16が固定接点7に閉成する。そして、可
動接点16が固定接点7に当接した後は、図5(d)に
示すように、第1梁部11に加えて第2梁部13が撓
み、可動電極12が固定電極4に吸着される。したがっ
て、可動接点16は、その周囲の可動電極12が固定電
極4に吸着されることにより、第2梁部13を介して固
定接点7に押し付けられる。このため、片当たりが発生
せず、接触信頼性が向上する。
Here, when a voltage is applied between the two electrodes to generate an electrostatic attraction, the first beam portion 11 is elastically deformed, and the movable substrate 2 approaches the fixed substrate 1. As a result, FIG.
As shown in (1), the convex portion 17 contacts the fixed substrate 1. As shown in FIG. 6, the electrostatic attraction tends to increase as the distance between the electrodes decreases. When the protrusion 17 approaches the fixed substrate 1 until it comes into contact with the fixed substrate 1, the electrostatic attraction acting between the electrodes 4 and 12 is set to increase sharply. Accordingly, the movable electrode 12 is attracted to the fixed electrode 4 by partially elastically deforming the periphery of the convex portion 17 of the movable substrate 2. As a result, the movable contact 16 closes to the fixed contact 7 as shown in FIG. After the movable contact 16 comes into contact with the fixed contact 7, as shown in FIG. 5D, the second beam 13 bends in addition to the first beam 11, and the movable electrode 12 contacts the fixed electrode 4. Adsorbed. Therefore, the movable contact 16 is pressed against the fixed contact 7 via the second beam 13 by the surrounding movable electrode 12 being attracted to the fixed electrode 4. Therefore, there is no one-side contact, and the contact reliability is improved.

【0025】このとき、第1、第2梁部11,13が可
動電極12を上方に引張る力をFs1,Fs2、凸部17が固
定基板1に当接してから接点部が閉性するまでの凸部周
囲の弾性変形による可動電極12を上方に引張る力をFs
3、絶縁膜6を介した可動電極12と固定電極4との間
の静電引力をFe、絶縁膜6の表面からの抗力をFnとする
と下記(数1)の関係があり、第1,第2梁部11,1
3のバネ係数、可動電極12と固定電極4との初期ギャ
ップ、接点の厚み等を設計することによりFn、Fs1を小
さくし、Fs2、すなわち接触力の(理想モデルからの)
低下を抑えることが可能である。
At this time, the first and second beam portions 11 and 13 apply a force for pulling the movable electrode 12 upward Fs1 and Fs2, and the convex portion 17 comes into contact with the fixed substrate 1 until the contact portion closes. The force that pulls the movable electrode 12 upward due to elastic deformation around the part is Fs
3. If the electrostatic attractive force between the movable electrode 12 and the fixed electrode 4 via the insulating film 6 is Fe, and the drag force from the surface of the insulating film 6 is Fn, there is the following relationship (Equation 1). 2nd beam part 11, 1
By designing the spring coefficient of 3, the initial gap between the movable electrode 12 and the fixed electrode 4, the thickness of the contact, etc., Fn and Fs1 are reduced, and Fs2, that is, the contact force (from the ideal model)
It is possible to suppress the decrease.

【0026】[0026]

【数1】Fe=Fs1+Fs2+Fs3+Fn[Equation 1] Fe = Fs1 + Fs2 + Fs3 + Fn

【0027】その後、両電極間の印加電圧を除去する
と、第1、第2梁部11,13の弾性力のみならず、凸
部17近傍の変形に伴う弾性力をも接点開離力として作
用させることができる。したがって、たとえ接点間に粘
着や溶着等が発生していても、確実に開離させることが
可能となる。そして、接点開離後、凸部17が離れるま
では凸部17の周囲の弾性力によって、凸部17の開離
後、可動基板2は第1梁部11の弾性力によって元の位
置に復帰する。
Thereafter, when the voltage applied between the two electrodes is removed, not only the elastic force of the first and second beam portions 11 and 13 but also the elastic force due to deformation near the convex portion 17 acts as a contact separating force. Can be done. Therefore, even if adhesion or welding occurs between the contacts, the contacts can be reliably separated. After the contact is separated, the movable substrate 2 returns to its original position by the elastic force of the first beam portion 11 after the convex portion 17 is separated by the elastic force around the convex portion 17 until the convex portion 17 is separated. I do.

【0028】このように、前記実施形態では、凸部17
を形成したので、接点開離力を大幅に増大させることが
でき、印加電圧除去時の可動基板2の動作をスムーズに
行わせることが可能となる。
As described above, in the above embodiment, the protrusion 17
Is formed, the contact separating force can be greatly increased, and the operation of the movable substrate 2 when removing the applied voltage can be performed smoothly.

【0029】また、可動基板2全体をシリコンウェハ単
体で形成すると共に、左右点対称,断面線対称となるよ
うに形成されている。このため、可動電極12に反りや
捩りが生じにくい。したがって、動作不能,動作特性の
バラツキを効果的に防止できると共に、円滑な動作特性
を確保可能となる。
Further, the entire movable substrate 2 is formed of a single silicon wafer, and is formed so as to be symmetric with respect to right and left points and symmetrical in cross section. Therefore, the movable electrode 12 is unlikely to be warped or twisted. Therefore, inoperability and variation in operating characteristics can be effectively prevented, and smooth operating characteristics can be ensured.

【0030】前記構成の静電マイクロリレーMRは、直
流電流から高周波信号までを低損失で良好に伝達する特
性を有するため、例えば、図7に示す無線装置110や
図8に示す計測装置120に採用することが可能であ
る。図7では、静電マイクロリレーMRは、内部回路1
12とアンテナ113の間に接続されている。図8で
は、静電マイクロリレーMRは、内部回路121から測
定対象物(図示せず)に至る各信号線の途中に接続され
ている。これによれば、従来素子に比べて、内部回路に
用いられる増幅器などへの負担を抑制しつつ、精度よく
信号を伝達可能となる。また、小型で、消費電力も少な
く、特に、バッテリー駆動の無線装置や複数使用される
計測装置で効果を発揮する。
Since the electrostatic microrelay MR having the above-described configuration has a characteristic of transmitting a DC signal to a high-frequency signal with low loss and good transmission, for example, the wireless device 110 shown in FIG. 7 and the measuring device 120 shown in FIG. It is possible to adopt. In FIG. 7, the electrostatic micro relay MR has an internal circuit 1
12 and an antenna 113. In FIG. 8, the electrostatic micro relay MR is connected in the middle of each signal line from the internal circuit 121 to the object to be measured (not shown). According to this, it is possible to transmit a signal more accurately while suppressing a load on an amplifier or the like used in an internal circuit as compared with a conventional element. In addition, it is small in size and consumes little power, and is particularly effective in a battery-powered wireless device and a plurality of measuring devices used.

【0031】なお、前記実施形態では、可動基板2を2
本の第1梁部11で支持するようにしたが、3本あるい
は4本の梁部で支持するようにしてもよい。これによ
り、面積効率の良い静電マイクロリレーを得ることが可
能となる。具体的に、可動基板2を4本の梁部で支持す
る構成を図9に示す。図9では、梁部11を4本とした
以外は図1と同様な構成である。
In the above embodiment, the movable substrate 2 is
Although the first beam portion 11 of the book is supported, it may be supported by three or four beam portions. This makes it possible to obtain an electrostatic microrelay with high area efficiency. Specifically, a configuration in which the movable substrate 2 is supported by four beams is shown in FIG. 9 has the same configuration as that of FIG. 1 except that four beams 11 are provided.

【0032】また、前記静電マイクロリレーMRは、図
10に示す構成としてもよい。すなわち、この静電マイ
クロリレーでは、支持部31が固定基板30の上面に設
けた矩形枠体で構成されている。可動基板40は、支持
部31の内縁から連結部32に片持ち支持されている。
可動基板40の下面には絶縁膜41が形成され、その自
由端側には可動接点42が設けられている。また、可動
接点42と連結部32の間には凸部43が形成され、可
動接点42が固定接点33に閉成する前に固定基板30
に当接するようになっている。凸部43は、接点閉成
後、最初に可動基板40が固定基板30に当接する位置
に設けると、接触力をもっとも大きくとることができ
る。また、さらに凸部43を設ける場合、次に可動基板
40が固定基板30に当接する位置に設けるのが好まし
い。
Further, the electrostatic micro relay MR may be configured as shown in FIG. That is, in this electrostatic micro relay, the support portion 31 is configured by a rectangular frame provided on the upper surface of the fixed substrate 30. The movable substrate 40 is cantilevered from the inner edge of the support portion 31 to the connecting portion 32.
An insulating film 41 is formed on the lower surface of the movable substrate 40, and a movable contact 42 is provided on a free end side thereof. A convex portion 43 is formed between the movable contact 42 and the connecting portion 32, and the fixed substrate 30 is closed before the movable contact 42 is closed to the fixed contact 33.
To come into contact with. If the convex portion 43 is provided at a position where the movable substrate 40 first comes into contact with the fixed substrate 30 after the contact is closed, the contact force can be maximized. When the projection 43 is further provided, it is preferable that the projection is provided at a position where the movable substrate 40 comes into contact with the fixed substrate 30 next.

【0033】また、前記実施形態では、可動電極12を
平坦形状としたが、その上面に凹所を形成して薄肉とし
てもよい。これにより、所望の剛性を確保しつつ、軽量
であっても、動作及び復帰速度をより一層向上させるこ
とが可能となる。また、前記可動電極12を梁部よりも
厚肉として剛性を大きくしてもよい。これにより、静電
引力のすべてを可動電極12に対する吸引力とすること
ができ、静電引力を効率良く第1梁部11又は第2梁部
13の変形に利用可能となる。
In the above-described embodiment, the movable electrode 12 has a flat shape. However, a concave portion may be formed on the upper surface to make the movable electrode 12 thin. Thereby, it is possible to further improve the operation and the return speed even if it is lightweight, while securing desired rigidity. Moreover, the rigidity may be increased by making the movable electrode 12 thicker than the beam portion. Thereby, all of the electrostatic attraction can be used as the attraction to the movable electrode 12, and the electrostatic attraction can be efficiently used for deformation of the first beam portion 11 or the second beam portion 13.

【0034】また、前記実施形態では、凸部17を可動
基板2に設けるようにしたが、固定基板1や双方の基板
に設けるようにしてもよい。また、前記凸部17は、接
点と支持部10の間に、二対以上設けるようにしてもよ
い。この場合、最初に凸部17が固定基板1に当接した
後、可動基板2が固定基板1に当接する位置に、順次次
の凸部17を設けるようにすればよい。これにより、凸
部17を一対だけ設ける場合に比べて、さらに接触力及
び開離力を安定させることが可能となる。
In the above-described embodiment, the convex portion 17 is provided on the movable substrate 2, but may be provided on the fixed substrate 1 or both substrates. Further, two or more pairs of the convex portions 17 may be provided between the contact point and the support portion 10. In this case, after the convex portion 17 first comes into contact with the fixed substrate 1, the next convex portion 17 may be sequentially provided at a position where the movable substrate 2 comes into contact with the fixed substrate 1. This makes it possible to further stabilize the contact force and the separating force as compared with the case where only one pair of the protrusions 17 is provided.

【0035】[0035]

【発明の効果】以上の説明から明らかなように、本発明
によれば、半導体プロセスにより安価で容易に製作で
き、しかも簡単かつ小型の構造である。また、信号線が
同一直線上に配置され、対向する可動基板は除去されて
いるので、優れた高周波特性を発揮する。さらに、両基
板のうち、少なくともいずれか一方に凸部を形成するよ
うにしたので、接点閉成時、所望の均一な接点接触力を
得ると共に、接点開離力を増大させることができる。特
に、凸部は、接点閉成後、最初に対向する基板に当接す
る部分に形成するようにしたので、接点開放時、静電引
力曲線に対して最適な接点開離力を発揮させることが可
能となる。
As is apparent from the above description, according to the present invention, the structure can be easily manufactured at low cost by a semiconductor process, and the structure is simple and small. Further, since the signal lines are arranged on the same straight line and the opposing movable substrates are removed, excellent high-frequency characteristics are exhibited. Further, since the convex portion is formed on at least one of the two substrates, a desired uniform contact contact force can be obtained and the contact opening force can be increased when the contacts are closed. In particular, since the convex portion is formed at a portion that first comes into contact with the opposing substrate after the contact is closed, it is possible to exert an optimal contact separating force with respect to an electrostatic attraction curve when the contact is opened. It becomes possible.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 第1実施形態に係る静電マイクロリレーの組
立斜視図である。
FIG. 1 is an assembled perspective view of an electrostatic micro relay according to a first embodiment.

【図2】 図1の分解斜視図である。FIG. 2 is an exploded perspective view of FIG.

【図3】 図2に示す可動基板を反対側から見た状態を
示す斜視図である。
FIG. 3 is a perspective view showing a state in which the movable substrate shown in FIG. 2 is viewed from the opposite side.

【図4】 図1に示す静電マイクロリレーの加工プロセ
スを示す断面図である。
FIG. 4 is a cross-sectional view showing a processing process of the electrostatic micro relay shown in FIG.

【図5】 図1に示す静電マイクロリレーの動作状態を
示す模式図である。
FIG. 5 is a schematic diagram showing an operation state of the electrostatic micro relay shown in FIG.

【図6】 固定基板と可動基板の間隙寸法と静電引力及
び可動基板の弾性力との関係を示すグラフである。
FIG. 6 is a graph showing a relationship between a gap size between a fixed substrate and a movable substrate, an electrostatic attractive force, and an elastic force of the movable substrate.

【図7】 図1の静電マイクロリレーを無線装置に採用
した状態を示すブロック図である。
FIG. 7 is a block diagram showing a state where the electrostatic micro relay of FIG. 1 is employed in a wireless device.

【図8】 図1の静電マイクロリレーを計測装置に採用
した状態を示すブロック図である。
8 is a block diagram showing a state in which the electrostatic micro relay of FIG. 1 is employed in a measuring device.

【図9】 他の実施例に係る静電マイクロリレーの平面
図(a)及び断面図(b)である。
FIG. 9 is a plan view (a) and a sectional view (b) of an electrostatic micro relay according to another embodiment.

【図10】 他の実施例に係る静電マイクロリレーの平
面図(a)及び断面図(b)である。
FIG. 10 is a plan view (a) and a sectional view (b) of an electrostatic micro relay according to another embodiment.

【符号の説明】[Explanation of symbols]

1…固定基板 2…可動基板 4…固定電極 5a,5b…信号線 6…絶縁膜 7…固定接点 10…支持部 11…第1梁部 12…可動電極 13…第2梁部 16…可動接点 17…凸部 DESCRIPTION OF SYMBOLS 1 ... Fixed board 2 ... Movable board 4 ... Fixed electrode 5a, 5b ... Signal line 6 ... Insulating film 7 ... Fixed contact 10 ... Support part 11 ... 1st beam part 12 ... Movable electrode 13 ... 2nd beam part 16 ... Movable contact 17 ... convex part

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 固定基板の固定電極と、固定基板に梁部
を介して支持した可動基板の可動電極との間に発生させ
る静電引力に基いて可動基板を駆動し、固定基板に形成
した2つの信号線にそれぞれ設けた固定接点に、前記可
動基板に絶縁膜を介して形成した可動接点を接離するこ
とにより、前記信号線を電気的に開閉するようにした静
電マイクロリレーにおいて、 前記梁部は、前記可動接点を中心とする点対称の位置2
個所で、前記可動基板を弾性支持し、 前記信号線は、一端部の各固定接点が所定間隔で隣接す
るように、固定基板上の同一直線上に配設し、 前記可動基板は、少なくとも信号線に対向する部分を除
去され、前記可動接点を、前記信号線が配設される直線
に直交し、かつ、前記信号線に対向しない2箇所で弾性
支持し、 前記基板のいずれか一方に、接点閉成後、最初に対向す
る基板に当接する部分に、一対の凸部を、前記可動接点
を中心として点対称に形成したことを特徴とする静電マ
イクロリレー。
The movable substrate is formed on the fixed substrate by driving the movable substrate based on an electrostatic attraction generated between a fixed electrode of the fixed substrate and a movable electrode of the movable substrate supported on the fixed substrate via a beam. An electrostatic micro relay that electrically opens and closes the signal lines by contacting and separating a movable contact formed on the movable substrate via an insulating film with fixed contacts provided on the two signal lines, respectively. The beam portion is located at a point symmetric position 2 about the movable contact.
The movable substrate is elastically supported, and the signal lines are arranged on the same straight line on the fixed substrate so that the fixed contacts at one end are adjacent to each other at a predetermined interval. The portion facing the line is removed, and the movable contact is elastically supported at two points that are orthogonal to the straight line on which the signal line is provided, and that do not face the signal line, and on one of the substrates, An electrostatic microrelay, wherein a pair of convex portions are formed point-symmetrically with respect to the movable contact at a portion which first comes into contact with the opposing substrate after the contact is closed.
【請求項2】 前記基板のいずれか一方に、凸部が対向
する基板に当接した後、さらに対向する基板に当接する
部分に、順次配設したことを特徴とする請求項1に記載
の静電マイクロリレー。
2. The method according to claim 1, wherein after one of the substrates has the convex portion in contact with the opposing substrate, the convex portion is sequentially disposed in a portion in contact with the opposing substrate. Electrostatic micro relay.
【請求項3】 前記凸部は、絶縁材料からなることを特
徴とする請求項1又は2に記載の静電マイクロリレー。
3. The electrostatic micro relay according to claim 1, wherein the projection is made of an insulating material.
【請求項4】 前記基板のうち、少なくとも前記凸部が
接離する部分から電極を除去したことを特徴とする請求
項1又は2に記載の静電マイクロリレー。
4. The electrostatic microrelay according to claim 1, wherein an electrode is removed from at least a portion of the substrate at which the protrusion contacts and separates.
【請求項5】 前記請求項1に記載の静電マイクロリレ
ーを、アンテナと内部回路との間の電気信号を開閉する
ように設けたことを特徴とする無線装置。
5. A wireless device, wherein the electrostatic micro relay according to claim 1 is provided so as to open and close an electric signal between an antenna and an internal circuit.
【請求項6】 前記請求項1に記載の静電マイクロリレ
ーを、測定対象物と内部回路との間の電気信号を開閉す
るように設けたことを特徴とする計測装置。
6. A measuring apparatus, wherein the electrostatic micro relay according to claim 1 is provided so as to open and close an electric signal between an object to be measured and an internal circuit.
JP2001089900A 2001-03-27 2001-03-27 Electrostatic micro relay, and radio apparatus and measuring apparatus using the electrostatic micro relay Expired - Lifetime JP3651404B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001089900A JP3651404B2 (en) 2001-03-27 2001-03-27 Electrostatic micro relay, and radio apparatus and measuring apparatus using the electrostatic micro relay
TW091105215A TW550616B (en) 2001-03-27 2002-03-19 Electrostatic micro-relay, radio device and measuring device using the electrostatic micro-relay, and contact switching method
KR10-2002-0015990A KR100455949B1 (en) 2001-03-27 2002-03-25 Electrostatic Micro-Relay, Radio Device and Measuring Device Using the Electrostatic Micro-Relay, and Contact Switching Method
EP02252164.5A EP1246216B1 (en) 2001-03-27 2002-03-26 Electrostatic micro-relay, radio device and measuring device using the electrostatic micro-relay, and contact switching method
CNB021082308A CN1234144C (en) 2001-03-27 2002-03-27 Static micro relay, radio device and measuring device and contact point switching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001089900A JP3651404B2 (en) 2001-03-27 2001-03-27 Electrostatic micro relay, and radio apparatus and measuring apparatus using the electrostatic micro relay

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Publication Number Publication Date
JP2002289081A true JP2002289081A (en) 2002-10-04
JP2002289081A5 JP2002289081A5 (en) 2005-02-17
JP3651404B2 JP3651404B2 (en) 2005-05-25

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WO2006043542A1 (en) * 2004-10-22 2006-04-27 Matsushita Electric Industrial Co., Ltd. Electromechanical switch
US7619497B2 (en) 2004-10-21 2009-11-17 Fujitsu Component Limited Electrostatic relay

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AU2003279414A1 (en) * 2002-11-19 2004-06-15 Baolab Microsystems S.L. Miniature relay and corresponding uses thereof
DE102004010150B9 (en) 2004-02-27 2012-01-26 Eads Deutschland Gmbh High-frequency MEMS switch with bent switching element and method for its production
JP2014130767A (en) * 2012-12-28 2014-07-10 Omron Corp Electrostatic microrelay and manufacturing method therefor
KR101595453B1 (en) 2014-06-30 2016-02-19 대한민국 Stationary blind device for shadowing security light
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CA2072199C (en) * 1991-06-24 1997-11-11 Fumihiro Kasano Electrostatic relay
US6054659A (en) * 1998-03-09 2000-04-25 General Motors Corporation Integrated electrostatically-actuated micromachined all-metal micro-relays
JP3852224B2 (en) * 1998-10-08 2006-11-29 オムロン株式会社 Electrostatic micro relay
JP3796988B2 (en) * 1998-11-26 2006-07-12 オムロン株式会社 Electrostatic micro relay

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7619497B2 (en) 2004-10-21 2009-11-17 Fujitsu Component Limited Electrostatic relay
WO2006043542A1 (en) * 2004-10-22 2006-04-27 Matsushita Electric Industrial Co., Ltd. Electromechanical switch
US7843023B2 (en) 2004-10-22 2010-11-30 Panasonic Corporation Electromechanical switch

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EP1246216A3 (en) 2004-07-21
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TW550616B (en) 2003-09-01
EP1246216A2 (en) 2002-10-02
KR100455949B1 (en) 2004-11-08
JP3651404B2 (en) 2005-05-25
CN1234144C (en) 2005-12-28
CN1378225A (en) 2002-11-06

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