JP2002284848A - Thermosetting resin composition, epoxy resin molding material and semiconductor device - Google Patents

Thermosetting resin composition, epoxy resin molding material and semiconductor device

Info

Publication number
JP2002284848A
JP2002284848A JP2001090825A JP2001090825A JP2002284848A JP 2002284848 A JP2002284848 A JP 2002284848A JP 2001090825 A JP2001090825 A JP 2001090825A JP 2001090825 A JP2001090825 A JP 2001090825A JP 2002284848 A JP2002284848 A JP 2002284848A
Authority
JP
Japan
Prior art keywords
group
compound
epoxy resin
molding material
resin molding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001090825A
Other languages
Japanese (ja)
Other versions
JP4595223B2 (en
Inventor
Hiroshi Nagata
永田  寛
Yoshiyuki Go
義幸 郷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP2001090825A priority Critical patent/JP4595223B2/en
Priority to TW91121186A priority patent/TWI278487B/en
Publication of JP2002284848A publication Critical patent/JP2002284848A/en
Application granted granted Critical
Publication of JP4595223B2 publication Critical patent/JP4595223B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an epoxy resin molding material which reconciles quick curability and storage stability. SOLUTION: The epoxy resin molding material comprises (A) a compound having two or more epoxy groups in the molecule, (B) a compound having two or more phenolic hydroxyl groups in the molecule, (C) a compound to be represented by formula (1) (wherein P is a phosphorus atom; R1 , R2 , R3 and R4 are each substituted or nonsubstituted aromatic group or an alkyl group; A1 is a divalent aromatic group; B1 is a single bond or a divalent substituent to be selected from an ether group, a sulfone group, a sulfide group, and a carbonyl group or a divalent organic group composed of 1-13 carbon atoms; and m is a number of 0<=m<1) or formula (2) (wherein P is a phosphorus atom; R1 , R2 , R3 and R4 are each substituted or nonsubstituted aromatic group or an alkyl group; A2 is a divalent aromatic group; and m is a number of 0<=m<1), and (D) an inorganic filler as the essential components.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、硬化性と保存性が
良好で、電気・電子材料分野に有用な熱硬化性樹脂組成
物およびこれを用いたエポキシ樹脂成形材料ならびに半
導体装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermosetting resin composition having good curability and preservability and useful in the field of electric and electronic materials, an epoxy resin molding material using the same, and a semiconductor device. .

【0002】[0002]

【従来の技術】電気・電子材料、特に半導体用封止材料
は、近年生産効率の向上を目的とした速硬化性と、物流
・保管時の取扱い性向上のための保存性の向上とが求め
られるようになってきている。従来、電気・電子材料分
野向けエポキシ樹脂には、硬化触媒として、アミン類、
イミダゾール系化合物、ジアザビシクロウンデセンなど
の含窒素複素環式化合物、第四級アンモニウム、ホスホ
ニウムあるいはアルソニウム化合物などの種々の化合物
が使用されている。アミン類、特にイミダゾール類など
は優れた硬化性を示すものの半導体封止材料として高温
高湿度条件下において内部配線腐食が生じる原因、すな
わち耐湿信頼性が低い傾向となっており、電気・電子材
料分野の使用には問題があり、ホスホニウム化合物など
のリン系化合物の使用が一般的となっている。これら一
般に使用される硬化触媒は、常温などの比較的低温にお
いても、硬化促進作用を示す場合が多い。このことは、
樹脂組成物の製造時および保存時の粘度上昇や、流動性
の低下、硬化性のばらつきなど樹脂組成物としての品質
を低下させる原因となっている。
2. Description of the Related Art In recent years, electrical and electronic materials, particularly semiconductor encapsulating materials, have been required to have rapid curability for the purpose of improving production efficiency and to improve storability for improving handling during distribution and storage. It is becoming possible. Conventionally, epoxy resins for electric and electronic materials have used amines,
Various compounds such as imidazole compounds, nitrogen-containing heterocyclic compounds such as diazabicycloundecene, quaternary ammonium, phosphonium and arsonium compounds have been used. Although amines, especially imidazoles, show excellent curability, they cause corrosion of internal wiring under high temperature and high humidity conditions as a semiconductor encapsulant, that is, they tend to have low moisture resistance reliability. There is a problem with the use of phosphorus, and the use of phosphorus compounds such as phosphonium compounds has become common. These generally used curing catalysts often exhibit a curing promoting action even at a relatively low temperature such as room temperature. This means
This is a cause of lowering the quality of the resin composition such as an increase in viscosity during production and storage of the resin composition, a decrease in fluidity, and a variation in curability.

【0003】この問題を解決すべく、近年では低温での
粘度、流動性の経時変化を抑え、成形、成形時の加熱に
よってのみ、硬化反応を発現する、いわゆる潜伏性硬化
促進剤の研究が盛んになされている。その手段として硬
化促進剤の活性点をイオン対により保護することで、潜
伏性を発現する研究がなされており、特開平8−412
90号公報では、種々の有機酸とホスホニウムイオンと
の塩構造を有する潜伏性硬化促進剤が開示されている。
しかしこのホスホニウム塩は、特定の高次の分子構造を
有さず、イオン対が比較的容易に外部環境の影響を受け
るため、近年の低分子エポキシ樹脂やフェノールアラル
キル樹脂のような分子の動きやすいフェノール樹脂硬化
剤を用いる半導体用封止材料では、保存性が低下する問
題が生じている。
In order to solve this problem, in recent years, studies on so-called latent curing accelerators, which suppress changes over time in viscosity and fluidity at low temperatures and develop a curing reaction only by molding and heating during molding, have been actively conducted. Has been made. As a means for protecting the active site of the curing accelerator with an ion pair, studies have been made to develop latentness.
No. 90 discloses a latent curing accelerator having a salt structure of various organic acids and phosphonium ions.
However, since this phosphonium salt does not have a specific higher molecular structure and the ion pair is relatively easily affected by the external environment, molecules such as low molecular weight epoxy resin and phenol aralkyl resin in recent years are easy to move. In the case of a semiconductor sealing material using a phenol resin curing agent, there is a problem that storage stability is reduced.

【0004】[0004]

【発明が解決しようとする課題】本発明は、硬化性と保
存性が良好で、電気・電子材料分野に有用な熱硬化性樹
脂組成物およびこれを用いたエポキシ樹脂成形材料なら
びに耐湿信頼性に優れる半導体装置を提供することを目
的とするものである。
SUMMARY OF THE INVENTION The present invention relates to a thermosetting resin composition having good curability and preservability, and useful in the field of electric and electronic materials, an epoxy resin molding material using the same, and moisture resistance reliability. It is an object to provide an excellent semiconductor device.

【0005】[0005]

【課題を解決するための手段】本発明は、[1]1分子
内にエポキシ基を2個以上有する化合物(A)、1分子
内にフェノール性水酸基を2個以上有する化合物(B)
および一般式(1)もしくは一般式(2)で表される分
子化合物(C)を必須成分とすることを特徴とする熱硬
化性樹脂組成物、
According to the present invention, there is provided [1] a compound having two or more epoxy groups in one molecule (A), and a compound (B) having two or more phenolic hydroxyl groups in one molecule.
And a thermosetting resin composition comprising a molecular compound (C) represented by the general formula (1) or (2) as an essential component;

【化5】 (Pはリン原子、R1、R2、R3およびR4は置換もしく
は無置換の芳香族基、またはアルキル基、A1は2価の
芳香族基、B1は単結合またはエーテル基、スルホン
基、スルフィド基、カルボニル基から選ばれる2価の置
換基または炭素原子数1〜13で構成される2価の有機
基を表す。mは0≦m<1の数を示す。)
Embedded image (P is a phosphorus atom, R 1 , R 2 , R 3 and R 4 are a substituted or unsubstituted aromatic group or an alkyl group, A 1 is a divalent aromatic group, B 1 is a single bond or an ether group, Represents a divalent substituent selected from a sulfone group, a sulfide group, and a carbonyl group, or a divalent organic group having 1 to 13 carbon atoms, and m is a number satisfying 0 ≦ m <1.)

【0006】[0006]

【化6】 (Pはリン原子、R1、R2、R3およびR4は置換もしく
は無置換の芳香族基、またはアルキル基、A2は2価の
芳香族基を示す。mは0≦m<1の数を示す。)
Embedded image (P is a phosphorus atom, R 1 , R 2 , R 3 and R 4 are a substituted or unsubstituted aromatic group or an alkyl group, and A 2 is a divalent aromatic group. M is 0 ≦ m <1. Indicates the number.)

【0007】[2]1分子内にエポキシ基を2個以上有
する化合物(A)、1分子内にフェノール性水酸基を2
個以上有する化合物(B)、一般式(1)もしくは一般
式(2)で表される分子化合物(C)および無機充填材
(D)を必須成分とすることを特徴とするエポキシ樹脂
成形材料、
[2] A compound (A) having two or more epoxy groups in one molecule, and a phenolic hydroxyl group in one molecule.
An epoxy resin molding material comprising, as essential components, a compound (B) having at least one compound (B), a molecular compound (C) represented by the general formula (1) or (2), and an inorganic filler (D).

【化7】 (Pはリン原子、R1、R2、R3およびR4は置換もしく
は無置換の芳香族基、またはアルキル基、A1は2価の
芳香族基、B1は単結合またはエーテル基、スルホン
基、スルフィド基、カルボニル基から選ばれる2価の置
換基または炭素原子数1〜13で構成される2価の有機
基を表す。mは0≦m<1の数を示す。)
Embedded image (P is a phosphorus atom, R 1 , R 2 , R 3 and R 4 are a substituted or unsubstituted aromatic group or an alkyl group, A 1 is a divalent aromatic group, B 1 is a single bond or an ether group, Represents a divalent substituent selected from a sulfone group, a sulfide group, and a carbonyl group, or a divalent organic group having 1 to 13 carbon atoms, and m is a number satisfying 0 ≦ m <1.)

【0008】[0008]

【化8】 (Pはリン原子、R1、R2、R3およびR4は置換もしく
は無置換の芳香族基、またはアルキル基、A2は2価の
芳香族基を示す。mは0≦m<1の数を示す。)
Embedded image (P is a phosphorus atom, R 1 , R 2 , R 3 and R 4 are a substituted or unsubstituted aromatic group or an alkyl group, and A 2 is a divalent aromatic group. M is 0 ≦ m <1. Indicates the number.)

【0009】[3]一般式(1)もしくは一般式(2)
で表される分子化合物(C)においてmの値がm=0あ
るいは0.5で示される第[2]項記載のエポキシ樹脂
成形材料、[4]一般式(1)のフェノール成分がビス
(4−ヒドロキシフェニル)スルホン、2,2−ビス
(4−ヒドロキシフェニル)1,1,1−3,3,3−
ヘキサフルオロプロパン、ビス(4−ヒドロキシフェニ
ル)エーテルである[3]項記載のエポキシ樹脂成形材
料、[5]一般式(2)のフェノール成分が2,3−ジ
ヒドロキシナフタレンである第[3]項記載のエポキシ
樹脂成形材料、[6]第[2]項、[3]項、[4]項
または[5]項のいずれかに記載のエポキシ樹脂成形材
料で半導体素子を封止してなることを特徴とする半導体
装置、である。これらを用いることにより、極めて硬化
性と保存性が良好なエポキシ樹脂成形材料を得ることが
できる。
[3] General formula (1) or general formula (2)
In the molecular compound (C) represented by the formula (2), the value of m is represented by m = 0 or 0.5, the epoxy resin molding material according to the item [2], [4] wherein the phenol component of the general formula (1) is bis ( 4-hydroxyphenyl) sulfone, 2,2-bis (4-hydroxyphenyl) 1,1,1-3,3,3-
The epoxy resin molding material according to item [3], which is hexafluoropropane or bis (4-hydroxyphenyl) ether; [5] the item [3], wherein the phenol component of the general formula (2) is 2,3-dihydroxynaphthalene. [6] A semiconductor element is sealed with the epoxy resin molding material according to any one of [6], [2], [3], [4] or [5]. Semiconductor device characterized by the above-mentioned. By using these, it is possible to obtain an epoxy resin molding material having extremely excellent curability and storage stability.

【0010】[0010]

【発明の実施の形態】本発明に用いる1分子内にエポキ
シ基を2個以上有する化合物(A)は、1分子内にエポ
キシ基を2個以上有するものであれば、何ら制限はな
く、例えばビフェニル型エポキシ樹脂、ノボラック型エ
ポキシ樹脂、ナフタレン型エポキシ樹脂などビフェノー
ルなどのフェノール類やフェノール樹脂、ナフトール類
などの水酸基にエピクロロヒドリンを反応させて得られ
るエポキシ樹脂、エポキシ化合物などが挙げられる。そ
の他に脂環式エポキシ樹脂のようにオレフィンを過酸を
用いて酸化させエポキシ化したエポキシ樹脂や、ハイド
ロキノン等のジヒドロキシベンゼン類をエピクロロヒド
リンでエポキシ化したものなどが挙げられる。
BEST MODE FOR CARRYING OUT THE INVENTION The compound (A) having two or more epoxy groups in one molecule used in the present invention is not limited as long as it has two or more epoxy groups in one molecule. Examples thereof include phenols such as biphenol, phenol resins such as biphenol type epoxy resin, novolak type epoxy resin, and naphthalene type epoxy resin, and epoxy resins and epoxy compounds obtained by reacting epichlorohydrin with hydroxyl groups such as naphthols. Other examples include an epoxy resin such as an alicyclic epoxy resin obtained by oxidizing an olefin using a peracid and epoxidizing it, and a resin obtained by epoxidizing dihydroxybenzenes such as hydroquinone with epichlorohydrin.

【0011】また1分子内にフェノール性水酸基を2個
以上有する化合物(B)は、1分子内にエポキシ基を2
個以上有する化合物(A)の硬化剤として作用するもの
である。具体的にはフェノールノボラック樹脂、クレゾ
ールノボラック樹脂、アルキル変性ノボラック樹脂(シ
クロアルケンの二重結合をフリーデルクラフツ型の反応
でフェノール類と反応、共縮合した樹脂を含む)、フェ
ノールアラルキル樹脂、ナフトール類とフェノール類を
カルボニル基含有化合物と共縮合した樹脂などが例示さ
れるが、1分子内で芳香族性の環に結合する水素原子
が、水酸基で2個以上置換された化合物であればよい。
The compound (B) having two or more phenolic hydroxyl groups in one molecule has two epoxy groups in one molecule.
It acts as a curing agent for the compound (A) having at least one compound. Specifically, phenol novolak resins, cresol novolak resins, alkyl-modified novolak resins (including resins obtained by reacting and co-condensing double bonds of cycloalkene with phenols by a Friedel-Crafts type reaction), phenol aralkyl resins, naphthols Examples thereof include resins obtained by co-condensing phenols and phenols with a carbonyl group-containing compound. A compound in which two or more hydrogen atoms bonded to an aromatic ring in one molecule are substituted with a hydroxyl group may be used.

【0012】本発明において硬化促進剤として作用する
分子化合物(C)は、一般式(1)または一般式(2)
で示され、テトラ置換ホスホニウムとフェノール化合物
との分子会合体である。1個のテトラ置換ホスホニウム
カチオンと、1個以上3個未満のフェノール性水酸基お
よび1個のフェノキシドアニオンの単位で構成され、テ
トラ置換ホスホニウムイオンの正電荷の周囲を1個以上
3個未満のフェノール性水酸基と1個のフェノキシドア
ニオンが取り囲み、安定化した構造となっているものと
考えられる。
In the present invention, the molecular compound (C) acting as a curing accelerator is represented by the general formula (1) or (2):
And a molecular association of a tetra-substituted phosphonium and a phenol compound. Consisting of one tetra-substituted phosphonium cation, one or more and less than three phenolic hydroxyl groups and one phenoxide anion unit, and one or more and less than three phenolic groups around the positive charge of the tetra-substituted phosphonium ion It is considered that the structure is stabilized by surrounding the hydroxyl group and one phenoxide anion.

【0013】このような構造をとり得るホスホニウムイ
オンは、置換または無置換のアリール基やアルキル基を
置換基として有するテトラ置換ホスホニウムイオンが、
熱や加水分解に対して安定であり好ましく、具体的には
テトラフェニルホスホニウム、テトラトリルホスホニウ
ムなどのテトラアリール置換ホスホニウム、トリフェニ
ルメチルホスニウムなどのトリアリールホスフィンとア
ルキルハライドから合成されたトリアリールモノアルキ
ルホスホニウム、テトラブチルホスホニウムなどのテト
ラアルキル置換ホスホニウムなどが例示される。
A phosphonium ion having such a structure is a tetra-substituted phosphonium ion having a substituted or unsubstituted aryl or alkyl group as a substituent.
It is stable against heat and hydrolysis and is preferable. Specifically, triarylmonophosphorium such as tetraphenylphosphonium and tetratolylphosphonium, and triarylmono synthesized from triarylphosphine such as triphenylmethylphosphonium and alkyl halide Examples thereof include tetraalkyl-substituted phosphonium such as alkylphosphonium and tetrabutylphosphonium.

【0014】また分子化合物(C)を形成するもう一方
の成分である、フェノール化合物としては、ビスフェノ
ールA(2,2−ビス(4−ヒドロキシフェニル)プロ
パン)、ビスフェノールF(4,4’−メチレンビスフ
ェノール、2,4’−メチレンビスフェノール、2,2
−メチレンビスフェノール)、ビス(4−ヒドロキシフ
ェニル)スルホン(ビスフェノールS)、ビスフェノー
ルE(4,4’−エチリデンビスフェノール)、ビスフ
ェノールフルオレン(4,4’−(9H−フルオレン−
9−イリデン)ビスフェノール)、4,4’−メチリデ
ンビス(2,6−ジメチルフェノール)、ビス(4−ヒ
ドロキシフェニル)メタノンなどのビスフェノール類、
4,4’−ビフェノール、2,2’−ビフェノール、
3,3’,5,5’−テトラメチルビフェノール、2,
2−ビス(4−ヒドロキシフェニル)1,1,1−3,
3,3−ヘキサフルオロプロパンなどのビフェノール
類、ヒドロキノン、レゾルシノール、カテコール、ビス
(4−ヒドロキシフェニル)エーテル、2,6−ジヒド
ロキシナフタレン、1,4−ジヒドロキシナフタレン、
2,3−ジヒドロキシナフタレン、1,6−ジヒドロキ
シナフタレン、1,1’−ビ−2−ナフトール、1,4
−ジヒドロキシアントラキノンなどが例示されるが、分
子化合物の安定性や硬化性、硬化物物性の点で、ビスフ
ェノールA、ビスフェノールF(4,4’−メチレンビ
スフェノール、2,4’−メチレンビスフェノール、
2,2’−メチレンビスフェノールや、本州化学工業
(株)製ビスフェノールF−Dのようなこれらの異性体
混合物を含む)、ビスフェノールS、4,4’−ビフェ
ノール、2,2−ビス(4−ヒドロキシフェニル)1,
1,1−3,3,3−ヘキサフルオロプロパン、ビス
(4−ヒドロキシフェニル)エーテル2,3−ジヒドロ
キシナフタレンが好適である。
Phenol compounds which are the other components forming the molecular compound (C) include bisphenol A (2,2-bis (4-hydroxyphenyl) propane) and bisphenol F (4,4'-methylene). Bisphenol, 2,4'-methylenebisphenol, 2,2
-Methylenebisphenol), bis (4-hydroxyphenyl) sulfone (bisphenol S), bisphenol E (4,4'-ethylidenebisphenol), bisphenolfluorene (4,4 '-(9H-fluorene-
Bisphenols such as 9-ylidene) bisphenol), 4,4′-methylidenebis (2,6-dimethylphenol) and bis (4-hydroxyphenyl) methanone;
4,4′-biphenol, 2,2′-biphenol,
3,3 ′, 5,5′-tetramethylbiphenol, 2,
2-bis (4-hydroxyphenyl) 1,1,1-3,
Biphenols such as 3,3-hexafluoropropane, hydroquinone, resorcinol, catechol, bis (4-hydroxyphenyl) ether, 2,6-dihydroxynaphthalene, 1,4-dihydroxynaphthalene,
2,3-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 1,1′-bi-2-naphthol, 1,4
-Dihydroxyanthraquinone, etc., but in view of the stability, curability and physical properties of the cured product of the molecular compound, bisphenol A, bisphenol F (4,4′-methylenebisphenol, 2,4′-methylenebisphenol,
2,2'-methylenebisphenol and a mixture of these isomers such as bisphenol FD manufactured by Honshu Chemical Industry Co., Ltd.), bisphenol S, 4,4'-biphenol, 2,2-bis (4- Hydroxyphenyl) 1,
1,1-3,3,3-hexafluoropropane and bis (4-hydroxyphenyl) ether 2,3-dihydroxynaphthalene are preferred.

【0015】分子化合物(C)は、前述のようなフェノ
ール化合物と最終的に脱ハロゲン化水素を助ける塩基、
例えば水酸化ナトリウム、水酸化カリウムなどのアルカ
リ金属水酸化物や、ピリジン、トリエチルアミンなどの
有機塩基をアルコールなどの溶媒に溶解し、続いて適当
な溶媒に溶解した前記テトラ置換ホスホニウムのハライ
ドを添加し反応させて、最終的には再結晶や再沈殿など
の操作により固形分として取り出す方法や、テトラ置換
ホスホニウムテトラ置換ボレートとフェノール化合物を
熱反応後、アルコールなどの溶媒中で加熱反応させる方
法で合成可能である。
The molecular compound (C) comprises a phenol compound as described above and a base which ultimately assists dehydrohalogenation,
For example, an alkali metal hydroxide such as sodium hydroxide or potassium hydroxide, or an organic base such as pyridine or triethylamine is dissolved in a solvent such as an alcohol, and then the tetra-substituted phosphonium halide dissolved in an appropriate solvent is added. It is synthesized by a method of reacting and finally taking out as a solid content by an operation such as recrystallization or reprecipitation, or a method of thermally reacting a tetra-substituted phosphonium tetra-substituted borate and a phenol compound and then heating and reacting in a solvent such as alcohol. It is possible.

【0016】本発明に用いる分子化合物(C)は、前述
のようにホスホニウム−フェノキシド型の塩を構造に有
するが、これが従来のホスホニウム−有機酸アニオン塩
型の化合物と異なる点は、分子化合物(C)では、フェ
ノール性水酸基のプロトンが関与した水素結合による高
次構造が、このイオン結合を取り囲んでいる点である。
従来の塩では、イオン結合の強さのみにより反応性を制
御していたのに対し、分子化合物(C)では、常温では
反応活性点のイオン対が高次構造により囲い込まれて活
性点が保護され、一方実際の成形の段階においては、こ
の高次構造が崩れることで活性点がむき出しになり、反
応性を発現する、いわゆる潜伏性が付与されている。
The molecular compound (C) used in the present invention has a phosphonium-phenoxide-type salt in its structure as described above, which is different from the conventional phosphonium-organic acid anion salt-type compound in that the molecular compound (C) In C), a tertiary structure due to a hydrogen bond involving a proton of a phenolic hydroxyl group surrounds this ionic bond.
In the conventional salt, the reactivity was controlled only by the strength of the ionic bond. On the other hand, in the molecular compound (C), the ion pair of the reaction active site was surrounded by the higher-order structure at room temperature, and the active site was controlled. On the other hand, at the stage of actual molding, the active sites are exposed due to the collapse of this higher-order structure, and so-called latency, which expresses reactivity, is imparted.

【0017】本発明に用いる硬化促進剤として作用する
分子化合物(C)の配合量は、1分子内にエポキシ基を
2個以上有する化合物(A)と硬化剤として作用する1
分子内にフェノール性水酸基を2個以上有する化合物
(B)の合計重量を100重量部とした場合、0.5〜
20重量部程度が硬化性、保存性、他特性のバランスが
よく好適である。また1分子内にエポキシ基を2個以上
有する化合物(A)と1分子内にフェノール性水酸基を
2個以上有する化合物(B)の配合比率は、1分子内に
エポキシ基を2個以上有する化合物(A)のエポキシ基
1モルに対し、1分子内にフェノール性水酸基を2個以
上有する化合物(B)のフェノール性水酸基と分子化合
物(C)に含まれるフェノール性水酸基との合算にて
0.5〜2モル、好ましくは0.8〜1.2程度のモル
比となるよう用いると、硬化性、耐熱性、電気特性等が
より良好となる。
The compounding amount of the molecular compound (C) acting as a curing accelerator used in the present invention is such that the compound (A) having two or more epoxy groups in one molecule and the compound (A) acting as a curing agent are used.
When the total weight of the compound (B) having two or more phenolic hydroxyl groups in the molecule is 100 parts by weight, 0.5 to
About 20 parts by weight is suitable because of good balance of curability, storage stability and other properties. The compounding ratio of the compound (A) having two or more epoxy groups in one molecule to the compound (B) having two or more phenolic hydroxyl groups in one molecule is such that the compound having two or more epoxy groups in one molecule is used. The sum of the phenolic hydroxyl group of the compound (B) having two or more phenolic hydroxyl groups in one molecule and the phenolic hydroxyl group contained in the molecular compound (C) is 0. When used in a molar ratio of about 5 to 2 mol, preferably about 0.8 to 1.2, the curability, heat resistance, electric properties, and the like are further improved.

【0018】本発明に用いる無機充填材(D)の種類に
ついては、特に制限はなく、一般に封止材料に用いられ
ているものを使用することができる。例えば溶融破砕シ
リカ粉末、溶融球状シリカ粉末、結晶シリカ粉末、2次
凝集シリカ粉末、アルミナ、チタンホワイト、水酸化ア
ルミニウム、タルク、クレー、ガラス繊維等が挙げら
れ、特に溶融球状シリカ粉末が好ましい。形状は限りな
く真球状であることが好ましく、又、粒子の大きさの異
なるものを混合することにより充填量を多くすることが
できる。
The type of the inorganic filler (D) used in the present invention is not particularly limited, and those generally used for a sealing material can be used. For example, fused crushed silica powder, fused spherical silica powder, crystalline silica powder, secondary agglomerated silica powder, alumina, titanium white, aluminum hydroxide, talc, clay, glass fiber, etc., are preferred, and fused spherical silica powder is particularly preferred. The shape is preferably infinitely spherical, and the filling amount can be increased by mixing particles having different particle sizes.

【0019】この無機充填材の配合量としては、1分子
内にエポキシ基を2個以上有する化合物(A)と1分子
内にフェノール性水酸基を2個以上有する化合物(B)
の合計量100重量部あたり、200〜2400重量部
が好ましい。200重量部未満だと無機充填材による補
強効果が充分に発現しないおそれがあり、2400重量
部を越えると、成形材料の流動性が低下し成形時に充填
不良等が生じるおそれがあるので好ましくない。特に無
機充填材の配合量が、前記成分(A)と(B)の合計量
100重量部あたり、250〜1400重量部であれ
ば、成形材料の硬化物の吸湿率が低くなり、半田クラッ
クの発生を防止することができ、更に溶融時の成形材料
の粘度が低くなるため、半導体装置内部の金線変形を引
き起こすおそれがなく、より好ましい。又無機充填材
は、予め充分混合しておくことが好ましい。
The compounding amount of the inorganic filler is a compound (A) having two or more epoxy groups in one molecule and a compound (B) having two or more phenolic hydroxyl groups in one molecule.
Is preferably 200 to 2400 parts by weight per 100 parts by weight of the total amount of If the amount is less than 200 parts by weight, the reinforcing effect of the inorganic filler may not be sufficiently exhibited. If the amount exceeds 2400 parts by weight, the fluidity of the molding material may be reduced, and poor filling may occur at the time of molding. In particular, if the compounding amount of the inorganic filler is 250 to 1400 parts by weight per 100 parts by weight of the total of the components (A) and (B), the moisture absorption of the cured product of the molding material is low, and the solder cracks Since generation can be prevented and the viscosity of the molding material at the time of melting is reduced, there is no possibility of causing gold wire deformation inside the semiconductor device, which is more preferable. It is preferable that the inorganic filler is sufficiently mixed in advance.

【0020】本発明のエポキシ樹脂成形材料は、(A)
〜(D)成分の他に、必要に応じてγ−グリシドキシプ
ロピルトリメトキシシラン等のカップリング剤、カーボ
ンブラック等の着色剤、臭素化エポキシ樹脂、酸化アン
チモン、リン化合物等の難燃剤、シリコーンオイル、シ
リコーンゴム等の低応力成分、天然ワックス、合成ワッ
クス、高級脂肪酸もしくはその金属塩類、パラフィン等
の離型剤、酸化防止剤等の各種添加剤を配合することが
でき、また、本発明において硬化促進剤として機能する
分子化合物(C)の特性を損なわない範囲で、トリフェ
ニルホスフィン、1,8−ジアザビシクロ(5,4,
0)ウンデセン−7、2−メチルイミダゾール等の触媒
と併用しても何ら問題はない。
The epoxy resin molding material of the present invention comprises (A)
In addition to the components (D), if necessary, a coupling agent such as γ-glycidoxypropyltrimethoxysilane, a coloring agent such as carbon black, a brominated epoxy resin, an antimony oxide, a flame retardant such as a phosphorus compound, Various additives such as low-stress components such as silicone oil and silicone rubber, natural wax, synthetic wax, higher fatty acids or metal salts thereof, release agents such as paraffin, antioxidants and the like can be blended. And triphenylphosphine, 1,8-diazabicyclo (5,4,4) in a range that does not impair the properties of the molecular compound (C) that functions as a curing accelerator in
0) There is no problem even when used in combination with a catalyst such as undecene-7, 2-methylimidazole.

【0021】本発明のエポキシ樹脂成形材料は、(A)
〜(D)成分及びその他の添加剤等をミキサーを用いて
常温混合し、ロール、押出機等の混練機で混練し、冷却
後粉砕して得られる。本発明のエポキシ樹脂成形材料を
用いて、半導体等の電子部品を封止し、半導体装置を製
造するには、トランスファーモールド、コンプレッショ
ンモールド、インジェクションモールド等の成形方法で
硬化成形することができる。本発明のエポキシ樹脂成形
材料の硬化物で封止された半導体装置は、本発明の技術
的範囲に含まれ、優れた耐湿性を示す。
The epoxy resin molding material of the present invention comprises (A)
To (D) are mixed at room temperature using a mixer, kneaded with a kneader such as a roll or an extruder, cooled, and pulverized. In order to manufacture a semiconductor device by encapsulating an electronic component such as a semiconductor using the epoxy resin molding material of the present invention, the molding can be performed by a molding method such as a transfer mold, a compression mold, and an injection mold. The semiconductor device sealed with the cured product of the epoxy resin molding material of the present invention is included in the technical scope of the present invention and exhibits excellent moisture resistance.

【0022】[0022]

【実施例】以下に、本発明の実施例を示すが、本発明は
これにより何ら制限を受けるものではない。 [硬化促進剤の合成]以下、合成した分子化合物(C)の
構造確認は、NMR、元素分析および次の方法による中
和滴定(ホスホニウムフェノキシド当量の測定)により
実施した。合成した分子化合物(C)をメタノール/水
系溶媒中で、重量既知の過剰のシュウ酸と反応させ、
残余のシュウ酸を規定度既知の水酸化ナトリウム水溶液
で定量して、分子化合物(C)の重量あたり規定度(N
/g)を算出した。この値の逆数がホスホニウムフェノ
キシド当量となる。
EXAMPLES Examples of the present invention will be described below, but the present invention is not limited by these examples. [Synthesis of Curing Accelerator] The structure of the synthesized molecular compound (C) was confirmed by NMR, elemental analysis and neutralization titration (measurement of phosphonium phenoxide equivalent) by the following method. Reacting the synthesized molecular compound (C) with a known excess amount of oxalic acid in a methanol / water solvent,
The remaining oxalic acid was quantified with an aqueous sodium hydroxide solution having a known normality, and the normality (N) per weight of the molecular compound (C) was determined.
/ G) was calculated. The reciprocal of this value is the phosphonium phenoxide equivalent.

【0023】(合成例1)撹拌装置付きの1リットルの
セパラブルフラスコに日華化学工業(株)・製BPS−
N(4,4’−ビスフェノールSを主成分とする)3
7.5g(0.15モル)、メタノール100mlを仕
込み、室温で撹拌溶解し、さらに攪拌しながら水酸化ナ
トリウム4.0g(0.1モル)を予め、50mlのメ
タノールで溶解した溶液を添加した。次いで予めテトラ
フェニルホスホニウムブロマイド41.9g(0.1モ
ル)を150mlのメタノールに溶解した溶液を加え
た。しばらく攪拌を継続し、300mlのメタノールを
追加した後、フラスコ内の溶液を大量の水に撹拌しなが
ら滴下し、白色沈殿を得た。沈殿を濾過、乾燥し、白色
結晶66.0gを得た。この化合物をC1とする。C1
は、NMR、マスペクトル、元素分析の結果から、テト
ラフェニルホスホニウム1分子と4,4’−ビスフェノ
ールSとが、モル比1:1.5で錯化した目的の分子化
合物であることが確認された。また中和滴定の値からホ
スホニウムフェノキシド当量が、理論値713に近く、
前述の構造を示した。合成の収率は92.6%であっ
た。 (合成例2〜6)合成例2〜6では、表1に示した条件
により、基本的な操作はすべて合成例1と同様に行い、
それぞれ化合物C2〜C6を調製した。結果を表1に示
す。
(Synthesis Example 1) A 1-liter separable flask equipped with a stirrer was charged with BPS- manufactured by Nikka Chemical Co., Ltd.
N (mainly composed of 4,4'-bisphenol S) 3
7.5 g (0.15 mol) and 100 ml of methanol were charged, and dissolved by stirring at room temperature. A solution in which 4.0 g (0.1 mol) of sodium hydroxide was previously dissolved in 50 ml of methanol was added while stirring. . Next, a solution in which 41.9 g (0.1 mol) of tetraphenylphosphonium bromide was dissolved in 150 ml of methanol in advance was added. Stirring was continued for a while, and after adding 300 ml of methanol, the solution in the flask was dropped into a large amount of water while stirring to obtain a white precipitate. The precipitate was filtered and dried to obtain 66.0 g of white crystals. This compound is designated as C1. C1
Is a target molecular compound in which one molecule of tetraphenylphosphonium and 4,4′-bisphenol S are complexed at a molar ratio of 1: 1.5 from the results of NMR, mass spectrum, and elemental analysis. Was. Also, from the value of the neutralization titration, the phosphonium phenoxide equivalent was close to the theoretical value of 713,
The structure described above is shown. The yield of the synthesis was 92.6%. (Synthesis Examples 2 to 6) In Synthesis Examples 2 to 6, the basic operations were all performed in the same manner as in Synthesis Example 1 under the conditions shown in Table 1.
Compounds C2 to C6 were prepared respectively. Table 1 shows the results.

【0024】(比較合成例1)撹拌装置付きの1リット
ルのセパラブルフラスコに、ビス(4−ヒドロキシ−
3,5−ジメチルフェニル)メタンを12.8g(0.
05モル)、メタノール50mlを仕込み、室温で撹拌
溶解し、さらに攪拌しながら水酸化ナトリウム4.0g
(0.1モル)を、予め50mlのメタノールで溶解し
た溶液を添加した。次いで、予めテトラブチルホスホニ
ウムブロマイド33.9g(0.1モル)を150ml
のメタノールに溶解した溶液を加えた。しばらく攪拌を
継続し、フラスコ内に純水100mlを撹拌しながら滴
下し、さらに2−プロパノール100mlを加え白色沈
殿を得た。沈殿を濾過、乾燥し、白色結晶を得た。この
化合物をD1とする。合成例1と同様の分析を行った結
果、ビス(4−ヒドロキシ−3,5−ジメチルフェニ
ル)メタンの2個の水酸基のプロトンが解離した各々の
フェノキシドに、各1分子のテトラブチルホスホニウム
が、1:2でイオン結合した化合物であった。このD1
は、単なるホスホニウム塩であって、本発明に用いる分
子化合物ではない。
(Comparative Synthesis Example 1) A 1-liter separable flask equipped with a stirrer was charged with bis (4-hydroxy-
12.8 g of 3,5-dimethylphenyl) methane (0.
05 mol) and 50 ml of methanol, stirred and dissolved at room temperature, and 4.0 g of sodium hydroxide with further stirring.
(0.1 mol) was previously dissolved in 50 ml of methanol. Then, 33.9 g (0.1 mol) of tetrabutylphosphonium bromide was previously added to 150 ml.
Was dissolved in methanol. Stirring was continued for a while, and 100 ml of pure water was dropped into the flask while stirring, and 100 ml of 2-propanol was further added to obtain a white precipitate. The precipitate was filtered and dried to obtain white crystals. This compound is designated as D1. As a result of performing the same analysis as in Synthesis Example 1, one molecule of tetrabutylphosphonium was added to each phenoxide in which the protons of two hydroxyl groups of bis (4-hydroxy-3,5-dimethylphenyl) methane were dissociated. The compound was ionically bonded at 1: 2. This D1
Is a simple phosphonium salt, not a molecular compound used in the present invention.

【0025】(比較合成例2)撹拌装置付きの1リット
ルのセパラブルフラスコに、p−フェニルフェノール1
7.0g(0.1モル)、メタノール50mlを仕込み
室温で撹拌溶解し、さらに攪拌しながら水酸化ナトリウ
ム4.0g(0.1モル)を、予め50mlのメタノー
ルで溶解した溶液を添加した。次いで、予めテトラフェ
ニルホスホニウムブロミド41.9g(0.1モル)を
150mlのメタノールに溶解した溶液を加えた。しば
らく攪拌を継続し、フラスコ内に純水100mlを撹拌
しながら滴下し、さらに2−プロパノール100mlを
加え白色沈殿を得た。沈殿を濾過、乾燥し、白色結晶を
得た。この化合物をD2とする。合成例1と同様の分析
を行った結果、p−フェニルフェノールの水酸基のプロ
トンが脱離したフェノキシドに、1分子のテトラフェニ
ルホスホニウムが、1:1でイオン結合した化合物であ
った。このD2は、単なるホスホニウム塩であって、本
発明に用いる分子化合物ではない。
(Comparative Synthesis Example 2) p-Phenylphenol 1 was placed in a 1-liter separable flask equipped with a stirrer.
A solution in which 4.0 g (0.1 mol) of sodium hydroxide was previously dissolved in 50 ml of methanol was added while stirring and dissolving 7.0 g (0.1 mol) of methanol and 50 ml of methanol at room temperature. Next, a solution in which 41.9 g (0.1 mol) of tetraphenylphosphonium bromide was dissolved in 150 ml of methanol in advance was added. Stirring was continued for a while, and 100 ml of pure water was dropped into the flask while stirring, and 100 ml of 2-propanol was further added to obtain a white precipitate. The precipitate was filtered and dried to obtain white crystals. This compound is designated as D2. As a result of performing the same analysis as in Synthesis Example 1, it was a compound in which one molecule of tetraphenylphosphonium was ion-bonded 1: 1 to phenoxide from which the proton of the hydroxyl group of p-phenylphenol was eliminated. D2 is a simple phosphonium salt and not a molecular compound used in the present invention.

【0026】(比較合成例3)撹拌装置付きの1リット
ルセパラブルフラスコに、安息香酸12.2g(0.1
モル)、メタノール50mlを仕込み室温で撹拌溶解
し、さらに攪拌しながら水酸化ナトリウム4.0g
(0.1モル)を、予め50mlのメタノールで溶解し
た溶液を添加した。次いで、予めテトラフェニルホスホ
ニウムブロミド41.9g(0.1モル)を150ml
のメタノールに溶解した溶液を加えた。しばらく攪拌を
継続し、フラスコ内の溶液を100mlの水に撹拌しな
がら滴下し、さらに2−プロパノール100mlを加え
白色沈殿を得た。沈殿を濾過、乾燥し、白色結晶を得
た。この化合物をD3とする。合成例1と同様の分析を
行った結果、安息香酸のカルボキシル基のプロトンが脱
離したカルボキシラートに、1分子のテトラフェニルホ
スホニウムが、1:1でイオン結合した化合物であっ
た。このD3は、単なるホスホニウム塩であって、本発
明に用いる分子化合物ではない。比較合成例の結果も、
他の合成例と同様に表1にまとめた。
(Comparative Synthesis Example 3) In a 1-liter separable flask equipped with a stirrer, 12.2 g (0.1
Mol) and methanol (50 ml), stirred and dissolved at room temperature, and further stirred to obtain 4.0 g of sodium hydroxide.
(0.1 mol) was previously dissolved in 50 ml of methanol. Next, 41.9 g (0.1 mol) of tetraphenylphosphonium bromide was added to 150 ml in advance.
Was dissolved in methanol. Stirring was continued for a while, and the solution in the flask was added dropwise to 100 ml of water while stirring, and 100 ml of 2-propanol was further added to obtain a white precipitate. The precipitate was filtered and dried to obtain white crystals. This compound is designated as D3. As a result of performing the same analysis as in Synthesis Example 1, it was a compound in which one molecule of tetraphenylphosphonium was ion-bonded 1: 1 to the carboxylate from which the proton of the carboxyl group of benzoic acid was eliminated. This D3 is a simple phosphonium salt and not a molecular compound used in the present invention. The result of the comparative synthesis example is also
Table 1 summarizes the results as in the other synthesis examples.

【0027】[0027]

【表1】 [Table 1]

【0028】[熱硬化性樹脂組成物の評価]まず、合成し
た分子化合物(C)を、1分子内にエポキシ基を2個以
上有する化合物(A)と、1分子内にフェノール性水酸
基を2個以上有する化合物(B)、に加えて粉砕混合
し、さらに100℃で5分間、熱板上で溶融混練した
後、冷却粉砕して組成物のサンプルを調製し評価を行っ
た。評価方法は、下記のとおりである。 (1)硬化トルク 前記のサンプル調製方法により作製した組成物を用い
て、キュラストメーター(オリエンテック社・製、JS
RキュラストメーターPS型)により、175℃で、4
5秒後のトルクを求めた。キュラストメーターにおける
トルクは、硬化性のパラメータであり、この値の大きい
方が硬化性は良好である。単位はkgf・cm。 (2)硬化発熱量残存率(保存性評価) 前記のサンプル調製方法により作製した組成物を用い
て、調製直後の初期硬化発熱量および40℃で3日間保
存処理後の硬化発熱量を測定し、初期硬化発熱量(mJ
/mg)に対する保存処理後の硬化発熱量(mJ/m
g)の百分率を算出した。尚硬化発熱量の測定は、昇温
速度10℃/分の条件で、示差熱分析により測定した。
この値が大きいほど、保存性が良好であることを示す。
[Evaluation of Thermosetting Resin Composition] First, the synthesized molecular compound (C) was compounded with a compound (A) having two or more epoxy groups in one molecule and a phenolic hydroxyl group in one molecule. In addition to the above compound (B), the mixture was pulverized and mixed, further melt-kneaded at 100 ° C. for 5 minutes on a hot plate, and then cooled and pulverized to prepare a sample of the composition for evaluation. The evaluation method is as follows. (1) Curing torque Using a composition prepared by the above-described sample preparation method, a curast meter (manufactured by Orientec Co., Ltd., JS
R Curastometer PS) at 175 ° C
The torque after 5 seconds was determined. The torque in the curast meter is a parameter of curability, and the larger the value, the better the curability. The unit is kgf · cm. (2) Residual rate of curing heat generation (evaluation of storage stability) Using the composition prepared by the above-described sample preparation method, the initial curing heat generation immediately after preparation and the curing heat generation after storage at 40 ° C for 3 days were measured. , Initial curing heat value (mJ
/ Mg) of curing heat after storage (mJ / m
The percentage of g) was calculated. In addition, the measurement of the calorific value of the curing was performed by differential thermal analysis under the condition of a heating rate of 10 ° C./min.
A larger value indicates better storage stability.

【0029】(実施例1〜6および比較例1〜4)実施
例1〜6および比較例1〜4について、表2に示した配
合により、前記の方法で、組成物のサンプルを調製し評
価した。比較例1では、実施例における化合物(C)に
かえてトリフェニルホスフィンを、比較例2〜4では、
前述比較合成例1〜3で合成された化合物D1〜D3を
用いた。得られた各組成物の評価結果は、表2に示した
通りであった。
(Examples 1 to 6 and Comparative Examples 1 to 4) With respect to Examples 1 to 6 and Comparative Examples 1 to 4, samples of the compositions were prepared by the above-described method according to the formulations shown in Table 2, and evaluated. did. In Comparative Example 1, triphenylphosphine was used instead of the compound (C) in Examples, and in Comparative Examples 2 to 4,
Compounds D1 to D3 synthesized in Comparative Synthesis Examples 1 to 3 were used. The evaluation results of the obtained compositions were as shown in Table 2.

【0030】[0030]

【表2】 [Table 2]

【0031】実施例に示すように、本発明の熱硬化性樹
脂組成物は、硬化性、保存性が良好であるのに対し、比
較例1のトリフェニルホスフィンを硬化促進剤に用いた
樹脂組成物は、硬化性、保存性とも悪く、比較例2〜4
の本発明に用いる分子化合物ではないホスホニウム塩
は、硬化性はよいものの保存性が劣る。
As shown in the Examples, the thermosetting resin composition of the present invention has good curability and storage stability, whereas the resin composition using triphenylphosphine of Comparative Example 1 as a curing accelerator. The products were also poor in curability and storage stability, and Comparative Examples 2 to 4
The phosphonium salt which is not a molecular compound used in the present invention has good curability but poor storage stability.

【0032】 [エポキシ樹脂成形材料の評価] (実施例7) 油化シェルエポキシ(株)製YX−4000H(ビフェニル型エポキシ樹脂 52重量部 三井化学(株)製XL−225(フェノールアラルキル樹脂) 48重量部 分子化合物C1 2.9重量部 溶融球状シリカ(平均粒径15μm) 500重量部 カーボンブラック 2重量部 臭素化ビスフェノールA型エポキシ樹脂 2重量部 カルナバワックス 2重量部 を混合し、熱ロールを用いて、95℃で8分間混練して
冷却後粉砕し、エポキシ樹脂成形材料を得た。得られた
エポキシ樹脂成形材料を、以下の方法で評価した。結果
を表3に示す。
[Evaluation of Epoxy Resin Molding Material] (Example 7) YX-4000H manufactured by Yuka Shell Epoxy Co., Ltd. (52 parts by weight of biphenyl type epoxy resin) XL-225 (phenol aralkyl resin) manufactured by Mitsui Chemicals, Inc. 48 2.9 parts by weight Molecular compound C1 2.9 parts by weight Fused spherical silica (average particle size 15 μm) 500 parts by weight Carbon black 2 parts by weight Brominated bisphenol A type epoxy resin 2 parts by weight Carnauba wax 2 parts by weight and mixed using a hot roll Then, the mixture was kneaded for 8 minutes at 95 ° C., cooled and pulverized to obtain an epoxy resin molding material, and the obtained epoxy resin molding material was evaluated by the following method.

【0033】評価方法 (1)スパイラルフローは、EMMI−I−66に準じ
たスパイラルフロー測定用の金型を用い、金型温度17
5℃、注入圧力70kg/cm2、硬化時間2分で測定
した。スパイラルフローは、流動性のパラメータであ
り、大きい数値を示す方が良好な流動性を示す。単位は
cm。 (2)硬化トルクは、キュラストメーター(オリエンテ
ック(株)製、JSRキュラストメーターIVPS型)
を用い、175℃、45秒後のトルクを測定した。この
値の大きい方が硬化性は良好である。単位はkgf・c
m (3)フロー残存率は、調製直後と30℃で1週間保存
した後のスパイラルフローを測定し、調製直後のスパイ
ラルフローに対する保存後の百分率として表した。単位
は%。 (4)耐湿信頼性は、金型温度175℃、圧力70kg
/cm2、硬化時間2分で16pDIPを成形し、この
成形物を175℃で8時間の後硬化を行った後、125
℃、相対湿度100%の水蒸気中で、20Vの電圧を1
6pDIPに印加して、断線不良を調べた。15個のパ
ッケージの内の8個以上に不良が出るまでの時間を不良
時間とした。単位は時間。なお測定時間は、最長で50
0時間とし、その時点で不良パッケージ数が7個以下で
あったものは、不良時間を500時間以上と示した。不
良時間が長いほど耐湿信頼性に優れる。
Evaluation method (1) Spiral flow was measured using a mold for measuring spiral flow according to EMMI-I-66.
The measurement was performed at 5 ° C., an injection pressure of 70 kg / cm 2 , and a curing time of 2 minutes. Spiral flow is a parameter of fluidity, and a larger value indicates better fluidity. The unit is cm. (2) Curing torque is measured by a curameter (Orientec Co., Ltd., JSR curameter IVPS type)
Was used to measure the torque after 175 ° C. and 45 seconds. The larger the value, the better the curability. The unit is kgf ・ c
m (3) The residual flow rate was measured as a spiral flow immediately after preparation and after storage for one week at 30 ° C., and expressed as a percentage of the spiral flow immediately after preparation after storage. Units%. (4) Moisture resistance reliability: mold temperature 175 ° C, pressure 70kg
/ Cm 2 , and a curing time of 2 minutes to form a 16pDIP. This molded product is post-cured at 175 ° C. for 8 hours,
In water vapor at 100 ° C. and 100% relative humidity, a voltage of 20 V
The voltage was applied to 6pDIP, and the disconnection defect was examined. The time until a defect appeared in eight or more of the 15 packages was defined as a defect time. The unit is time. The measurement time is up to 50
When the number of defective packages was 7 or less at that time, the defective time was indicated as 500 hours or more. The longer the failure time, the better the moisture resistance reliability.

【0034】(実施例8〜9、比較例5〜8)実施例8
〜9および比較例5〜8について、表3の配合に従い、
実施例7と同様にしてエポキシ樹脂成形材料を調製し評
価した。結果を表3に示す。
(Examples 8 to 9, Comparative Examples 5 to 8) Example 8
~ 9 and Comparative Examples 5 to 8 according to the formulation in Table 3,
An epoxy resin molding material was prepared and evaluated in the same manner as in Example 7. Table 3 shows the results.

【0035】[0035]

【表3】 [Table 3]

【0036】実施例7〜9の本発明のエポキシ樹脂成形
材料は、保存性、硬化性がきわめて良好であり、またこ
のエポキシ樹脂成形材料の硬化物で封止された半導体装
置は、耐湿性が良好であることがわかる。一方、比較例
5〜8のエポキシ樹脂成形材料は流動性、保存性、耐湿
信頼性のいずれかが実施例7〜9と比較し劣る。
The epoxy resin molding materials of the present invention of Examples 7 to 9 have extremely good preservability and curability, and the semiconductor device sealed with the cured product of the epoxy resin molding material has moisture resistance. It turns out that it is favorable. On the other hand, the epoxy resin molding materials of Comparative Examples 5 to 8 are inferior to those of Examples 7 to 9 in any of fluidity, storage stability, and moisture resistance reliability.

【0037】[0037]

【発明の効果】本発明の熱硬化性樹脂組成物及びエポキ
シ樹脂成形材料は、優れた硬化性、保存性を有し、これ
を用いて半導体素子を封止してなる半導体装置は、耐湿
信頼性に優れており、産業上有用である。
As described above, the thermosetting resin composition and the epoxy resin molding material of the present invention have excellent curability and preservability. It has excellent properties and is industrially useful.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 23/31 Fターム(参考) 4J002 CC04X CC05X CC07X CD04W CD05W CD06W CE00X DE137 DE147 DJ017 DJ047 DL007 EW176 FA047 FD017 FD130 FD156 FD160 FD200 GQ05 4J036 AA01 AD01 AF01 AF06 DB05 DD07 FA01 FA05 FB07 4M109 AA01 EA03 EB03 EB04 EB08 EB09 EB12 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 23/31 F-term (Reference) 4J002 CC04X CC05X CC07X CD04W CD05W CD06W CE00X DE137 DE147 DJ017 DJ047 DL007 EW176 FA047 FD017 FD130 FD156 FD160 FD200 GQ05 4J036 AA01 AD01 AF01 AF06 DB05 DD07 FA01 FA05 FB07 4M109 AA01 EA03 EB03 EB04 EB08 EB09 EB12

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 1分子内にエポキシ基を2個以上有する
化合物(A)、1分子内にフェノール性水酸基を2個以
上有する化合物(B)および一般式(1)もしくは一般
式(2)で表される分子化合物(C)を必須成分とする
ことを特徴とする熱硬化性樹脂組成物。 【化1】 (Pはリン原子、R1、R2、R3およびR4は置換もしく
は無置換の芳香族基、またはアルキル基、A1は2価の
芳香族基、B1は単結合またはエーテル基、スルホン
基、スルフィド基、カルボニル基から選ばれる2価の置
換基または炭素原子数1〜13で構成される2価の有機
基を表す。mは0≦m<1の数を示す。) 【化2】 (Pはリン原子、R1、R2、R3およびR4は置換もしく
は無置換の芳香族基、またはアルキル基、A2は2価の
芳香族基を示す。mは0≦m<1の数を示す。)
1. A compound (A) having two or more epoxy groups in one molecule, a compound (B) having two or more phenolic hydroxyl groups in one molecule, and a compound represented by the general formula (1) or (2). A thermosetting resin composition comprising the represented molecular compound (C) as an essential component. Embedded image (P is a phosphorus atom, R 1 , R 2 , R 3 and R 4 are a substituted or unsubstituted aromatic group or an alkyl group, A 1 is a divalent aromatic group, B 1 is a single bond or an ether group, Represents a divalent substituent selected from a sulfone group, a sulfide group, and a carbonyl group, or a divalent organic group having 1 to 13 carbon atoms, and m represents a number of 0 ≦ m <1.) 2] (P is a phosphorus atom, R 1 , R 2 , R 3 and R 4 are a substituted or unsubstituted aromatic group or an alkyl group, and A 2 is a divalent aromatic group. M is 0 ≦ m <1. Indicates the number.)
【請求項2】 1分子内にエポキシ基を2個以上有する
化合物(A)、1分子内にフェノール性水酸基を2個以
上有する化合物(B)、一般式(1)もしくは一般式
(2)で表される分子化合物(C)および無機充填材
(D)を必須成分とすることを特徴とするエポキシ樹脂
成形材料。 【化3】 (Pはリン原子、R1、R2、R3およびR4は置換もしく
は無置換の芳香族基、またはアルキル基、A1は2価の
芳香族基、B1は単結合またはエーテル基、スルホン
基、スルフィド基、カルボニル基から選ばれる2価の置
換基または炭素原子数1〜13で構成される2価の有機
基を表す。mは0≦m<1の数を示す。) 【化4】 (Pはリン原子、R1、R2、R3およびR4は置換もしく
は無置換の芳香族基、またはアルキル基、A2は2価の
芳香族基を示す。0≦m<1の数を示す。)
2. A compound having two or more epoxy groups in one molecule (A), a compound having two or more phenolic hydroxyl groups in one molecule (B), a compound represented by the general formula (1) or the general formula (2). An epoxy resin molding material, comprising the molecular compound (C) and the inorganic filler (D) represented as essential components. Embedded image (P is a phosphorus atom, R 1 , R 2 , R 3 and R 4 are a substituted or unsubstituted aromatic group or an alkyl group, A 1 is a divalent aromatic group, B 1 is a single bond or an ether group, Represents a divalent substituent selected from a sulfone group, a sulfide group, and a carbonyl group, or a divalent organic group having 1 to 13 carbon atoms, and m represents a number of 0 ≦ m <1.) 4] (P represents a phosphorus atom, R 1 , R 2 , R 3 and R 4 represent a substituted or unsubstituted aromatic group or an alkyl group, and A 2 represents a divalent aromatic group. Is shown.)
【請求項3】 一般式(1)もしくは一般式(2)で表
される分子化合物(C)においてmの値がm=0あるい
は0.5で示される請求項2記載のエポキシ樹脂成形材
料。
3. The epoxy resin molding material according to claim 2, wherein in the molecular compound (C) represented by the general formula (1) or (2), the value of m is represented by m = 0 or 0.5.
【請求項4】 一般式(1)のフェノール成分がビス
(4−ヒドロキシフェニル)スルホン、2,2−ビス
(4−ヒドロキシフェニル)1,1,1−3,3,3−
ヘキサフルオロプロパン、ビス(4−ヒドロキシフェニ
ル)エーテルである請求項3記載のエポキシ樹脂成形材
料。
4. The phenol component of the general formula (1) is bis (4-hydroxyphenyl) sulfone, 2,2-bis (4-hydroxyphenyl) 1,1,1-3,3,3-
The epoxy resin molding material according to claim 3, which is hexafluoropropane or bis (4-hydroxyphenyl) ether.
【請求項5】 一般式(2)のフェノール成分が2,3
−ジヒドロキシナフタレンである請求項3記載のエポキ
シ樹脂成形材料。
5. The phenol component of the general formula (2) contains a few
The epoxy resin molding material according to claim 3, which is -dihydroxynaphthalene.
【請求項6】 請求項2、3、4または5のいずれかに
記載のエポキシ樹脂成形材料で半導体素子を封止してな
ることを特徴とする半導体装置。
6. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin molding material according to claim 2.
JP2001090825A 2001-03-27 2001-03-27 Thermosetting resin composition, epoxy resin molding material and semiconductor device Expired - Fee Related JP4595223B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004269586A (en) * 2003-03-05 2004-09-30 Sumitomo Bakelite Co Ltd Cure accelerator, epoxy resin composition and semiconductor device
SG131750A1 (en) * 2002-09-18 2007-05-28 Sumitomo Bakelite Co Thermosetting resin composition, epoxy resin molding material and semiconductor device
WO2013157383A1 (en) * 2012-04-19 2013-10-24 セントラル硝子株式会社 Method for producing 2,2-bis(4-hydroxyphenyl)hexafluoropropane-quaternary phosphonium salt

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157594A (en) * 1979-05-23 1980-12-08 Dow Chemical Co Phosphonium phenoxide catalyst for accelerating reaction of epoxide and phenol and*or carboxylic acid
JP2001064366A (en) * 1999-08-30 2001-03-13 Sumitomo Bakelite Co Ltd Thermosetting resin composition, and epoxy resin molding material and semiconductor device prepared by using the same
JP2001098053A (en) * 1999-09-30 2001-04-10 Sumitomo Bakelite Co Ltd Thermosetting resin composition and epoxy resin molding material and semiconductor device using the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157594A (en) * 1979-05-23 1980-12-08 Dow Chemical Co Phosphonium phenoxide catalyst for accelerating reaction of epoxide and phenol and*or carboxylic acid
JPS58103527A (en) * 1979-05-23 1983-06-20 ザ ダウ ケミカル カンパニ− Previously catalyst-added epoxy resin composition
JP2001064366A (en) * 1999-08-30 2001-03-13 Sumitomo Bakelite Co Ltd Thermosetting resin composition, and epoxy resin molding material and semiconductor device prepared by using the same
JP2001098053A (en) * 1999-09-30 2001-04-10 Sumitomo Bakelite Co Ltd Thermosetting resin composition and epoxy resin molding material and semiconductor device using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG131750A1 (en) * 2002-09-18 2007-05-28 Sumitomo Bakelite Co Thermosetting resin composition, epoxy resin molding material and semiconductor device
JP2004269586A (en) * 2003-03-05 2004-09-30 Sumitomo Bakelite Co Ltd Cure accelerator, epoxy resin composition and semiconductor device
WO2013157383A1 (en) * 2012-04-19 2013-10-24 セントラル硝子株式会社 Method for producing 2,2-bis(4-hydroxyphenyl)hexafluoropropane-quaternary phosphonium salt
JP2013221024A (en) * 2012-04-19 2013-10-28 Central Glass Co Ltd Method for producing 2,2-bis(4-hydroxyphenyl)hexafluoropropane-quaternary phosphonium salt

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