JP2002275243A - Epoxy resin molding material for sealing semiconductor and semiconductor device - Google Patents

Epoxy resin molding material for sealing semiconductor and semiconductor device

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Publication number
JP2002275243A
JP2002275243A JP2001080917A JP2001080917A JP2002275243A JP 2002275243 A JP2002275243 A JP 2002275243A JP 2001080917 A JP2001080917 A JP 2001080917A JP 2001080917 A JP2001080917 A JP 2001080917A JP 2002275243 A JP2002275243 A JP 2002275243A
Authority
JP
Japan
Prior art keywords
epoxy resin
resin
molding material
semiconductor
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001080917A
Other languages
Japanese (ja)
Inventor
Hiroshige Nakagawa
裕茂 中川
Hiroyuki Tanaka
宏之 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP2001080917A priority Critical patent/JP2002275243A/en
Publication of JP2002275243A publication Critical patent/JP2002275243A/en
Pending legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To manufacture an epoxy resin molding material for sealing semiconductors having good adhesivity between the resin and a lead frame, and having good reliability of the package after sealing the semiconductor device even in the case of high filling rate of an inorganic filler, and a semiconductor device sealed with the molding material. SOLUTION: The epoxy resin molding material for sealing semiconductors contains at least an epoxy resin, a curing agent and an inorganic filler as raw materials. The molding material contains an amide solvent as an essential component. The semiconductor device is sealed with the molding material.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体封止成形後
の樹脂とリ−ドフレ−ムとの密着性あるいは樹脂と半導
体素子との密着性が良く、パッケ−ジ信頼性が良好であ
るエポキシ樹脂成形材料及びその半導体装置の製造方法
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy having good adhesiveness between a resin and a lead frame after molding by encapsulation of a semiconductor or between a resin and a semiconductor element, and having good package reliability. The present invention relates to a resin molding material and a method for manufacturing the semiconductor device.

【0002】[0002]

【従来の技術】IC、LSI等の半導体素子の封止に
は、信頼性と生産性の観点から、トランスファ成形でき
るエポキシ樹脂成形材料が広く用いられている。エポキ
シ樹脂成形材料は、エポキシ樹脂、フェノ−ル樹脂、硬
化促進剤、シリカフィラ−、離型剤、難燃剤、カップリ
ング剤などから構成され、通常、構成材料を所定量秤量
したものをヘンシェルミキサ−などの攪拌混合機を用い
て予備混合し、次いで単軸押出機、ニ軸押出機、加熱ロ
−ル、連続ニ−ダなどの加熱混練機を用いて溶融混練す
ることによって、全成分を均一に混合・分散する製造方
法が採用されている。
2. Description of the Related Art Epoxy resin molding materials that can be transfer-molded are widely used for sealing semiconductor elements such as ICs and LSIs from the viewpoint of reliability and productivity. The epoxy resin molding material is composed of an epoxy resin, a phenol resin, a curing accelerator, a silica filler, a release agent, a flame retardant, a coupling agent, and the like. Usually, a predetermined amount of the constituent materials is weighed to obtain a Henschel mixer. Premixing using a stirring mixer such as-and then melt kneading using a heating kneader such as a single screw extruder, a twin screw extruder, a heating roll, a continuous kneader, etc. A manufacturing method of uniformly mixing and dispersing is adopted.

【0003】他方、電子機器の小型軽量化、高機能化の
動向に対応して、半導体パッケ−ジの小型化、薄型化、
狭ピッチ化が益々加速する中、半導体封止用エポキシ樹
脂成形材料には、封止成形後の半導体パッケ−ジの信頼
性に関連する半田耐熱性や耐湿性の向上が強く求められ
ている。このため、半導体パッケ−ジ内部の応力や吸湿
度を低減する目的で、エポキシ樹脂成形材料の成分は無
機充填材の含有率が高い材料へと移行している。しか
し、この移行は封止成形時の成形性を低下させるばかり
か、封止成形後の樹脂とリ−ドフレ−ムとの密着性低下
など、逆にパッケ−ジ信頼性を低下させる結果を招いて
いる。
On the other hand, in response to the trend toward smaller and lighter electronic devices and higher performance, smaller and thinner semiconductor packages have been developed.
As the pitch becomes narrower, the epoxy resin molding compound for semiconductor encapsulation is strongly required to have improved solder heat resistance and moisture resistance related to the reliability of the semiconductor package after encapsulation. For this reason, in order to reduce the stress and moisture absorption inside the semiconductor package, the components of the epoxy resin molding material have shifted to materials having a high content of inorganic filler. However, this shift not only reduces the moldability during encapsulation molding, but also results in a reduction in package reliability, such as a decrease in adhesion between the resin and the lead frame after encapsulation molding. Have been.

【0004】密着性を向上させる手段として最近分子内
にリン酸エステル構造を有するアルミニウムキレ−ト化
合物を添加する方法(特開平11−302502号公
報)、インデン系ポリマ−と有機チタン化合物及び/ま
たは金属アセチルアセトナ−ト錯体を添加する方法(特
開平11−012438号公報)、ジエチルジチオカル
バメ−ト亜鉛を添加する方法(特開平11−22879
1号公報)等、樹脂と界面の密着力を向上させる方法
や、ビフェニル型エポキシ樹脂とナフタレン構造を有す
るフェノ−ル樹脂硬化剤にトリフェニルホスヒンとベン
ゾキノン付加物硬化促進剤を使用する方法(特開平11
−166036)、ビフェニル型エポキシ樹脂とノボラ
ック型フェノ−ル樹脂系硬化剤に特定の有機リン系硬化
促進剤を使用する方法(特開平11−001541)
等、樹脂の硬化度を向上させる方法が開示されている
が、これらの方法では密着性向上は十分ではないという
問題があった。
As a means for improving the adhesion, a method of recently adding an aluminum chelate compound having a phosphate ester structure in the molecule (JP-A-11-302502), an indene-based polymer and an organic titanium compound and / or A method of adding a metal acetylacetonate complex (JP-A-11-012438) and a method of adding zinc diethyldithiocarbamate (JP-A-11-22879)
No. 1), a method of improving the adhesion between a resin and an interface, and a method of using triphenylphosphine and a benzoquinone adduct curing accelerator as a biphenyl-type epoxy resin and a phenolic resin curing agent having a naphthalene structure ( JP 11
166060), a method of using a specific organic phosphorus-based curing accelerator as a biphenyl-type epoxy resin and a novolak-type phenol resin-based curing agent (JP-A-11-001541)
For example, methods for improving the degree of curing of a resin have been disclosed, but these methods have a problem that the adhesion is not sufficiently improved.

【0005】[0005]

【発明が解決しようとする課題】本発明の目的は、半導
体封止成形後の樹脂とリ−ドフレ−ムとの密着性あるい
は樹脂と半導体素子との密着性が良く、パッケ−ジ信頼
性が良好なエポキシ樹脂成形材料及び半導体装置を提供
することである。
SUMMARY OF THE INVENTION An object of the present invention is to improve the adhesiveness between a resin and a lead frame after semiconductor encapsulation molding or the adhesiveness between a resin and a semiconductor element and to improve the package reliability. An object is to provide a good epoxy resin molding material and a semiconductor device.

【0006】[0006]

【課題を解決するための手段】本発明はこのような情勢
を鑑み研究を進めた結果、アミド系溶媒を添加すること
により樹脂成分の混合が向上し、樹脂と界面との密着力
を向上させるだけでなく、アミド系溶媒が樹脂の硬化反
応を促進させるため樹脂の硬化度が均一となり、得られ
る半導体封止成形後の樹脂とリ−ドフレ−ムとの密着性
あるいは樹脂と半導体素子との密着性が向上することを
見出した。すなわち本発明は、エポキシ樹脂、硬化剤、
無機充填材及びアミド系溶媒を含有してなることを特徴
とする半導体封止用エポキシ樹脂成形材料であり、アミ
ド系溶媒が、 N−メチル−2−ピロリドンまたはN,
N−ジメチルホルムアミドである前記の半導体封止用エ
ポキシ樹脂成形材料であり、これらの半導体封止用エポ
キシ樹脂成形材料で封止された半導体装置である。
The present invention has been studied in view of such circumstances, and as a result, the addition of an amide-based solvent improves the mixing of the resin components and improves the adhesion between the resin and the interface. Not only that, the amide-based solvent accelerates the curing reaction of the resin, so that the degree of curing of the resin becomes uniform, and the resulting resin after encapsulation molding has good adhesion between the resin and the lead frame or between the resin and the semiconductor element. It has been found that the adhesion is improved. That is, the present invention provides an epoxy resin, a curing agent,
An epoxy resin molding compound for semiconductor encapsulation, comprising an inorganic filler and an amide solvent, wherein the amide solvent is N-methyl-2-pyrrolidone or N,
An epoxy resin molding material for semiconductor encapsulation, which is N-dimethylformamide, and a semiconductor device encapsulated with these epoxy resin molding materials for encapsulating semiconductor.

【0007】[0007]

【発明の実施の形態】以下に本発明を詳細に説明する。
本発明に使用されるエポキシ樹脂は、1分子中に2個以
上のエポキシ基を有し、常温で固形のものであれば、特
に限定するものではないが、例えばビスフェノ−ル型エ
ポキシ樹脂、ビフェニル型エポキシ樹脂、フェノ−ルノ
ボラック型エポキシ樹脂、クレゾ−ルノボラック型エポ
キシ樹脂、アルキル変性トリフェノ−ルメタン型エポキ
シ樹脂などが挙げられ、これらを単独で用いても、混合
して用いても構わない。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail.
The epoxy resin used in the present invention is not particularly limited as long as it has two or more epoxy groups in one molecule and is solid at room temperature. Examples thereof include bisphenol type epoxy resin and biphenyl. Type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, alkyl-modified triphenol methane type epoxy resin, and the like. These may be used alone or in combination.

【0008】本発明に使用される硬化剤としてはフェノ
−ル樹脂を用い、常温で固形のものであれば特に限定す
るものではないが、例えば、フェノ−ルノボラック樹
脂、クレゾ−ルノボラック樹脂、ジシクロペンタジエン
変性フェノ−ル樹脂、フェノ−ルアラルキル樹脂、ナフ
ト−ルアラルキル樹脂、テンペン変性フェノ−ル樹脂な
どが挙げられ、これらを単独で用いても、混合して用い
ても構わない。
The curing agent used in the present invention is not particularly limited as long as it is a phenol resin and is a solid at room temperature. Examples thereof include phenol novolak resin, cresol novolak resin, and dicyclohexane resin. Examples thereof include a pentadiene-modified phenol resin, a phenol-aralkyl resin, a naphthol-aralkyl resin, and a tempene-modified phenol resin. These may be used alone or in combination.

【0009】本発明に使用される無機充填材は、アルミ
ナ粉末、溶融シリカ粉末、結晶シリカ粉末、窒化珪素な
どが挙げられ、これらを単独で用いても、混合して用い
ても構わない。また、無機充填材は予めシランカップリ
ング剤で表面処理されているものを用いてもよい。溶融
シリカ粉末を使用する場合には、形状は球状のものを用
い、シリカの含有量は成形加工性と信頼性のバランスを
考慮して、全組成物中の60〜94重量%にすることが
好ましい。
The inorganic filler used in the present invention includes alumina powder, fused silica powder, crystalline silica powder, silicon nitride and the like, and these may be used alone or as a mixture. Further, as the inorganic filler, a material which has been surface-treated with a silane coupling agent in advance may be used. When using a fused silica powder, a spherical shape should be used, and the content of silica should be 60 to 94% by weight in the whole composition in consideration of a balance between moldability and reliability. preferable.

【0010】本発明で得られる半導体封止用エポキシ樹
脂成形材料はこれまで説明した必須成分のほかに、必要
に応じて、γ−グリシドキシプロピルトリメトキシシラ
ンなどの充填材に用いる表面処理剤、カ−ボンブラック
などの着色剤、カルバナワックスなどの離型剤、シリコ
−ンオイルなどの低応力剤、三酸化アンチモンなどの難
燃剤などを配合することができる。
The epoxy resin molding material for encapsulating a semiconductor obtained by the present invention is, if necessary, a surface treating agent used for a filler such as γ-glycidoxypropyltrimethoxysilane in addition to the essential components described above. And a colorant such as carbon black, a release agent such as carbana wax, a low stress agent such as silicone oil, and a flame retardant such as antimony trioxide.

【0011】本発明ではアミド系溶媒を上述の原料に添
加することが特徴である。アミド系溶媒としてはN−メ
チル−2−ピロリドン(NMP)、 N,N−ジメチル
ホルムアミド(DMF)等が挙げられる。アミド系溶媒
は樹脂との相溶性が良く、添加することにより樹脂成分
の混合が促進され、そのことにより樹脂とリ−ドフレ−
ムあるいは樹脂と半導体素子との密着力が向上する。ま
た、アミド系溶媒は樹脂の硬化反応を促進させるため樹
脂の硬化度が均一になり、使用中も硬化ムラによる樹脂
とリ−ドフレ−ムあるいは樹脂と半導体素子との剥離が
起こらないため密着性が向上する。従来、硬化促進材と
して使用されてきたイミダゾ−ル、アミン系化合物、有
機スルホン酸化合物等は固体であり、エポキシ樹脂との
相溶性が悪いため分散しにくく、少量の添加では樹脂が
硬化せず、イミダゾ−ル等の硬化促進材を分散させるた
めには過剰に添加せざるを得ない。過剰に添加しても、
硬化ムラによる樹脂とリ−ドフレ−ムあるいは樹脂と半
導体素子との剥離が起こり密着性が低下するため好まし
くない。アミド系溶媒を単独で用いても良いが必要に応
じて他の物質、例えばアミン系化合物、有機スルホン酸
化合物、イミダゾ−ル化合物などと併用して用いても良
い。
The present invention is characterized in that an amide solvent is added to the above-mentioned raw materials. Examples of the amide solvent include N-methyl-2-pyrrolidone (NMP) and N, N-dimethylformamide (DMF). The amide-based solvent has good compatibility with the resin, and the addition of the amide-based solvent promotes the mixing of the resin components.
The adhesion between the semiconductor device and the memory or resin is improved. In addition, the amide-based solvent promotes the curing reaction of the resin, so that the degree of curing of the resin becomes uniform. Even during use, the resin and the lead frame or the resin and the semiconductor element do not peel off due to uneven curing, so that the adhesive property is not increased. Is improved. Conventionally, imidazole, amine compounds, organic sulfonic acid compounds, etc., which have been used as curing accelerators, are solids, have poor compatibility with epoxy resins, and are difficult to disperse. In order to disperse a curing accelerator such as imidazole or the like, it must be added in excess. Even if added in excess,
It is not preferable because the resin and the lead frame or the resin and the semiconductor element are peeled off due to uneven curing and the adhesion is reduced. The amide solvent may be used alone, or may be used in combination with another substance, for example, an amine compound, an organic sulfonic acid compound, an imidazole compound, or the like, if necessary.

【0012】予備混合の方法としてはエポキシ樹脂また
は硬化剤またはエポキシ樹脂と硬化剤を混合したものに
対し、アルミナ粉末と他の無機充填材を添加し、エポキ
シ樹脂と硬化剤の融点以上に加熱した混合機の中でボ−
ル状のメディアを通過させて無機充填材を分散させる混
合機を用いるのが好適である。
As a pre-mixing method, an alumina resin and another inorganic filler are added to an epoxy resin or a curing agent or a mixture of an epoxy resin and a curing agent, and the mixture is heated to a temperature equal to or higher than the melting point of the epoxy resin and the curing agent. In the mixing machine
It is preferable to use a mixer that allows the inorganic filler to be dispersed by passing the inorganic filler through the medium.

【0013】[0013]

【実施例】以下に実施例と比較例を示し、本発明を具体
的に説明するが、本発明は下記の実施例に限定されるも
のではない。 <配合> エポキシ樹脂[3,3’,5,5’−テトラメチルビフ
ェノ−ルジグリシジルエ−テル樹脂、融点103℃、エ
ポキシ当量195] フェノ−ル樹脂[フェノ−ルノボラック樹脂、融点40
℃、水酸基当量175] 臭素化ビスフェノ−ルA型エポキシ樹脂 [油化シェル
エポキシ社製、エピコ−ト5050] 球状シリカ粉末 [電気化学工業社製、FB−74] γ−グリシドキシプロピルトリメトキシシラン カ−ボンブラック カルナバワックス 三酸化アンチモン 硬化促進剤[N−メチル−2−ピロリドン(NMP)] 硬化促進剤[N,N−ジメチルホルムアミド(DM
F)] 硬化促進剤[イミダゾ−ル]
EXAMPLES The present invention will be specifically described below with reference to examples and comparative examples, but the present invention is not limited to the following examples. <Blending> Epoxy resin [3,3 ′, 5,5′-tetramethylbiphenol diglycidyl ether resin, melting point 103 ° C., epoxy equivalent 195] Phenol resin [phenol novolak resin, melting point 40]
° C, hydroxyl equivalent: 175] Brominated bisphenol A type epoxy resin [Epicoat 5050, manufactured by Yuka Shell Epoxy Co., Ltd.] Spherical silica powder [FB-74, manufactured by Denki Kagaku Kogyo Co., Ltd.] γ-glycidoxypropyltrimethoxy Silane Carbon black Carnauba wax Antimony trioxide Curing accelerator [N-methyl-2-pyrrolidone (NMP)] Curing accelerator [N, N-dimethylformamide (DM
F)] Curing accelerator [imidazole]

【0014】<製造方法>上記の処方通り配合したもの
を室温状態に設定したヘンシェルミキサ−(容量15リ
ットル、回転数、1500rpm.)で2分間予備混合
したものを同方向噛み合いニ軸押出混練機(スクリュ径
D=30mm、押出機長さ=1mm、ニ−ディングディ
スク長=6D、スクリュ回転数300rpm.、吐出量
20kg/hr)で樹脂温が105℃となる様、加熱混
練した。加熱混練したものを冷却後粉砕し、これをタブ
レット化し、低圧トランスファ−成形機にて175℃、
70kg/cm2、120秒の条件で半田クラック試
験、温度サイクル試験用として9×9mmの半導体素子
を80pQFPに封止した。実施例1〜4及び比較例1
〜2の結果を表1に示した。
<Production method> A premixed mixture of the above-mentioned components in a Henschel mixer (volume: 15 liters, rotation speed: 1500 rpm) set at room temperature for 2 minutes is meshed in the same direction with a twin-screw extruder. (Screw diameter D = 30 mm, extruder length = 1 mm, kneading disk length = 6 D, screw rotation speed 300 rpm, discharge rate 20 kg / hr), and the mixture was heated and kneaded so that the resin temperature became 105 ° C. The mixture obtained by heating and kneading is cooled and then pulverized, tableted, and then subjected to low-pressure transfer molding at 175 ° C.
Solder cracking test under the conditions of 70 kg / cm 2, 120 seconds, sealing the semiconductor element 9 × 9 mm for the temperature cycle test to 80PQFP. Examples 1 to 4 and Comparative Example 1
Table 2 shows the results of Nos. 1 to 2.

【0015】<評価方法> スパイラルフロ−:成形温度175℃、成形圧力70k
g/cm2でトランスファ−成形により測定。 半田クラック試験:封止したテスト用素子を85℃、相
対湿度60%、168次間の条件で吸湿させた後、IR
リフロ−(240℃、10秒)を3回行い、パッケ−ジ
クラックの有無を判定。n=10。 温度サイクル試験:封止したテスト用素子を−65℃〜
150℃で1000サイクル繰り返し、パッケ−ジクラ
ックの有無を判定。n=10。 吸湿率:溶融混練直前の材料をφ30mmのアルミカッ
プに各3g秤量し、150℃×15min.熱処理を施
し材料を固化させる。固化した材料を50℃×100%
RH×24Hr処理し、処理後の重量増加分から吸湿率
を計算により求めた(単位%)。 密着性:半田クラック試験後のテスト用素子を超音波探
傷機で、半導体素子と樹脂組成物の成形品との界面の剥
離を観察。n=10。 パッケ−ジ表面の外観不良:半田クラック試験後に封止
した80pQFPの表面の外観を肉眼で観察し、微粒子
に起因する外観不良の有無を観察。n=10。
<Evaluation method> Spiral flow: molding temperature 175 ° C, molding pressure 70k
Measured by transfer molding at g / cm 2 . Solder crack test: After the sealed test element was absorbed under the conditions of 85 ° C., 60% relative humidity and 168 orders, IR
Perform reflow (240 ° C., 10 seconds) three times to determine the presence or absence of package cracks. n = 10. Temperature cycle test: Sealed test element at -65 ° C ~
Repeat at 1000 cycles at 150 ° C to determine the presence of package cracks. n = 10. Moisture absorption: 3 g each of the material immediately before the melt-kneading was weighed into an aluminum cup having a diameter of 30 mm. A heat treatment is applied to solidify the material. 50% x 100% of solidified material
RH × 24Hr treatment, and the moisture absorption was calculated from the weight increase after the treatment (unit%). Adhesion: The test element after the solder crack test was observed with an ultrasonic flaw detector at the interface between the semiconductor element and the molded article of the resin composition. n = 10. Poor appearance of package surface: The appearance of the surface of 80pQFP sealed after the solder crack test was observed with the naked eye, and the presence or absence of an external defect caused by fine particles was observed. n = 10.

【0016】[0016]

【表1】 [Table 1]

【0017】[0017]

【発明の効果】本発明によれば、たとえ無機充填材の充
填率が高くても、半導体封止成形後の樹脂とリ−ドフレ
−ムとの密着性が良く、パッケ−ジ信頼性が良好である
半導体封止用エポキシ樹脂成形材料及びその半導体装置
を製造することができる。
According to the present invention, even if the filling rate of the inorganic filler is high, the adhesion between the resin and the lead frame after the semiconductor encapsulation molding is good and the package reliability is good. And a semiconductor device using the same.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4J002 CC04X CC05X CD04W CD05W CD06W CE00X DE146 DJ006 DJ016 EP017 EU027 FD016 FD142 FD157 GQ05 4J036 AA01 DA01 DC21 DC38 FA01 FA02 FA05 JA07 4M109 AA01 EA02 EB03 EB04 EB06 EB12 EB18 EC09  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4J002 CC04X CC05X CD04W CD05W CD06W CE00X DE146 DJ006 DJ016 EP017 EU027 FD016 FD142 FD157 GQ05 4J036 AA01 DA01 DC21 DC38 FA01 FA02 FA05 JA07 4M109 AA01 EA02 EB03 EB04 EB09

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】エポキシ樹脂、硬化剤、無機充填材及びア
ミド系溶媒を含有してなることを特徴とする半導体封止
用エポキシ樹脂成形材料。
An epoxy resin molding material for semiconductor encapsulation, comprising an epoxy resin, a curing agent, an inorganic filler and an amide solvent.
【請求項2】 アミド系溶媒が、 N−メチル−2−ピ
ロリドンまたはN,N−ジメチルホルムアミドである請
求項1記載の半導体封止用エポキシ樹脂成形材料。
2. The epoxy resin molding material for semiconductor encapsulation according to claim 1, wherein the amide-based solvent is N-methyl-2-pyrrolidone or N, N-dimethylformamide.
【請求項3】請求項1または2記載の半導体封止用エポ
キシ樹脂成形材料で封止された半導体装置。
3. A semiconductor device sealed with the epoxy resin molding material for semiconductor sealing according to claim 1.
JP2001080917A 2001-03-21 2001-03-21 Epoxy resin molding material for sealing semiconductor and semiconductor device Pending JP2002275243A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001080917A JP2002275243A (en) 2001-03-21 2001-03-21 Epoxy resin molding material for sealing semiconductor and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001080917A JP2002275243A (en) 2001-03-21 2001-03-21 Epoxy resin molding material for sealing semiconductor and semiconductor device

Publications (1)

Publication Number Publication Date
JP2002275243A true JP2002275243A (en) 2002-09-25

Family

ID=18937109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001080917A Pending JP2002275243A (en) 2001-03-21 2001-03-21 Epoxy resin molding material for sealing semiconductor and semiconductor device

Country Status (1)

Country Link
JP (1) JP2002275243A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011213716A (en) * 2010-03-15 2011-10-27 Mitsubishi Chemicals Corp Method for producing polyallyloxy compound and method for producing polyglycidyloxy compound

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011213716A (en) * 2010-03-15 2011-10-27 Mitsubishi Chemicals Corp Method for producing polyallyloxy compound and method for producing polyglycidyloxy compound

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