JP2002268067A - Liquid crystal device and manufacturing method for substrate for liquid crystal device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal device which can be prevented from having a defect in the alignment of liquid crystal due to abnormality of alignment film caused by a defective vapor-deposition area of an inorganic material occurred at a slope and its vicinity of a projection or recessed part of a base layer of an alignment film. SOLUTION: The liquid crystal device is constituted by sandwiching a liquid crystal layer 50 between a couple of mutually opposite substrates 10 and 20 and provided with inorganic alignment films 36 and 42 formed by obliquely vapor-depositing an inorganic material on the surfaces of the substrates 10 and 20 on the sides of the liquid crystal layer 50 from one direction; and the base layer of at least one organic alignment film 36 between those inorganic alignment films has unevenness 80 on its surface so that the tilt angle (b) of the slope 81b in the oblique vapor-deposition direction SA of the inorganic material between the slopes 81a and 81b on both the sides of a projection part 81 is smaller than the tilt angle of the slope 81a on the side facing the oblique vapor-deposition direction of the inorganic material and the tilt angle (b) of the slope 81b is less than the angle between the vapor-deposition direction SA of the inorganic material and the substrate 10.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a liquid crystal device and a method of manufacturing a substrate for a liquid crystal device, and more particularly to a liquid crystal device suitable for use in a projection type light valve of a liquid crystal projector and a method of manufacturing a substrate for the liquid crystal device. Things.

[0002]

2. Description of the Related Art A projection type liquid crystal display device such as a liquid crystal projector has a three-panel type using three liquid crystal panels corresponding to three primary colors of red (R), green (G) and blue (B). When,
There is a single-panel type including one liquid crystal panel and color generation means. A liquid crystal panel, which is a component of the projection type liquid crystal display device, is composed of, for example, an active matrix type liquid crystal light valve and polarizing plates disposed before and after it. FIG. 15 is a sectional view showing an example of the configuration of this type of liquid crystal light valve.

As shown in FIG. 15, a liquid crystal light valve is one in which liquid crystal is sealed between two transparent substrates such as a glass substrate and a quartz substrate, and a thin film transistor (Thin Film Transistor, An array substrate 10 (hereinafter abbreviated as TFT) and an opposing substrate 20 which is the other substrate disposed opposite to the array substrate 10 are provided. The entire TFT array substrate 10 has a plurality of pixels formed in a matrix forming an image display area of a liquid crystal device. TF
The pixel electrode 9a and the pixel electrode 9
A plurality of pixel switching TFTs 30 for controlling the pixel signal a are formed in a matrix, and a data line 6a for supplying an image signal is connected to the TFT through the contact hole 5.
It is electrically connected to 30 source regions 1d. Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and is configured to sequentially apply a scanning signal to the scanning line 3a in a pulsed manner at a predetermined timing. The pixel electrode 9a is electrically connected to the drain region 1e of the pixel switching TFT 30 through the contact hole 8, and is supplied from the data line 6a by closing the pixel switching TFT 30 as a switching element for a certain period of time. The written image signal is written at a predetermined timing.

An image signal of a predetermined level written in the liquid crystal via the pixel electrode 9a is held for a certain period between the counter electrode 21 formed on the counter substrate 20, and the held image signal is usually In order to prevent leakage, a storage capacitor 70 is added in parallel with a liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode 21. Here, the storage capacity 7
As a method of forming 0, a capacitance line 3b, which is a wiring for forming a capacitance, is provided. Further, on the pixel electrode 9a,
Alignment film 16 that has been subjected to a predetermined alignment treatment such as a rubbing treatment
Is provided. The pixel electrode 9a is made of, for example, ITO (In
It is formed from a transparent conductive film such as a dium tin oxide film. The alignment film 16 is generally formed from an organic film such as a polyimide film. In FIG. 15, reference numerals 4 and 7 denote first and second interlayer insulating films.

On the other hand, a counter electrode (common electrode) 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 on which a predetermined alignment process such as rubbing is performed is provided below the counter electrode (common electrode). Have been. Like the pixel electrode 9a, the counter electrode 21 is formed of a transparent conductive film such as an ITO film. The alignment film 22 is also formed on the TFT array substrate 10.
Like the alignment film 16 on the side, it is formed of an organic film such as a polyimide film. Further, the opposing substrate 20 is provided with a light shielding film 23 in a region other than the display region of each pixel. The light-shielding film 23 is formed so that incident light from the side of the counter substrate 20 is applied to the channel region 1a of the semiconductor layer 1a of the pixel switching TFT 30.
a ', source regions 1b, 1d, drain regions 1c, 1e
This is to prevent intrusion into the like. further,
The light-shielding film 23 has a function of improving a contrast ratio, preventing color mixture of color materials, and the like, and is also called a so-called black matrix.

Each substrate has such a structure, and a TF is disposed such that the pixel electrode 9a and the counter electrode 21 face each other.
The T-array substrate 10 and the opposing substrate 20 are respectively adhered at predetermined intervals at the peripheral portion of the substrate via a sealing material, and liquid crystal is sealed in a space surrounded by the sealing material between the TFT array substrate 10 and the opposing substrate 20. Thus, a liquid crystal layer 50 is formed. The liquid crystal layer 50 assumes a predetermined alignment state by the action of the alignment film when no electric field is applied from the pixel electrode 9a (no voltage is applied). A liquid crystal projector may employ a vertical alignment mode in order to realize a high contrast ratio.
2 is a rubbing treatment of the organic film in a vertical alignment state, and the liquid crystal molecules are in a vertical alignment state having a pre-tilt angle of several degrees in a state where no electric field is applied.

However, in recent years, with the miniaturization of liquid crystal light valves accompanying higher definition, higher luminance, and lower cost of liquid crystal projectors, the intensity of light incident on the light valves has increased. Therefore, in a liquid crystal light valve using an organic alignment film such as a polyimide film, the alignment film is deteriorated by light or heat, and as a result, the alignment regulating force of the liquid crystal molecules by the alignment film is reduced, and the alignment state of the liquid crystal molecules is disturbed. In some cases, display defects such as a decrease in contrast ratio may occur.
The cause of such a problem is that an organic film such as polyimide has a slight absorption in a visible light region around 400 nm to 450 nm, and the alignment film is deteriorated due to this absorption,
This is because the alignment disorder of the liquid crystal occurs near the position where the alignment film has deteriorated as shown by the reference numeral 59 in FIG.

In order to solve such a problem, the alignment film is not made of an organic film such as polyimide, but is made of silicon oxide (SiO) or the like having a predetermined surface shape capable of aligning liquid crystal molecules. A liquid crystal light valve constituted by an inorganic obliquely deposited film made of an inorganic material has been proposed. The orientation film made of the inorganic obliquely deposited film is formed by depositing an inorganic material from one direction while fixing the substrate at a certain angle, specifically, about 60 to 80 degrees from the normal direction of the substrate (3 degrees from the substrate).
An inorganic material can be vapor-deposited from the inclined direction S (about 0 to 10 degrees), and can be formed by an oblique vapor deposition method in which columnar crystals arranged at a predetermined angle with respect to the substrate are grown.
Since the alignment film formed in this manner is made of an inorganic material, it has excellent light resistance and heat resistance as compared with those made of an organic material such as polyimide, and improves the durability of the liquid crystal light valve. It has the advantage of being able to.

[0009]

However, in an active matrix type liquid crystal device using the TFT element 30, a plurality of wirings and a plurality of insulating films are laminated on a substrate (particularly, a TFT array substrate 10). As shown in FIG. 16, a wiring or an insulating film as a base layer of the alignment film 26 formed of the inorganic obliquely evaporated film has irregularities 40. Specifically, the projections and depressions 40 of the pixel electrode 9a formed on the capacitance line 3b, the depression 42 of the pixel electrode 9a formed in the contact hole 8, and the projection 41 of the second interlayer insulating film 7 And so on. The side surfaces of these convex portions 41,
The inner surface of the concave portion 42 generally has a slope,
The inclination angles a and b of the left and right slopes 41a and 41b (the slope facing the oblique deposition direction of the inorganic material and the slope facing the oblique deposition direction of the inorganic material) of the convex portion 41 are also substantially equal. Specifically, the inclination angles a and b of the slopes 41a and 41b (the angle between the slopes and the substrate) are about 30 to 45 degrees. In addition, in FIG. 16, the code | symbol S is the oblique vapor deposition direction of an inorganic material at the time of performing inorganic oblique vapor deposition. The inclination angle a or b is larger than the angle θ between the oblique deposition direction S and the TFT array substrate 10.

When the inorganic material is obliquely vapor-deposited from the one direction S on the surface of the underlayer having such irregularities 40, as shown in FIG. The slope 41a on the side facing the one side vapor deposition direction and the vicinity thereof can favorably vapor-deposit the inorganic material, but the slope 41b on the side along the oblique vapor deposition direction of the inorganic material and the vicinity thereof have the portions indicated by reference numeral 60 in FIG. As described above, a non-uniform deposition of an inorganic material or a poorly-deposited region where no deposition is performed is generated, and this poorly-deposited region becomes a defective region of the alignment film. In addition, the slope 42b on the side facing the oblique deposition direction of the inorganic material on the slope of the concave portion 42 of the base layer and the vicinity thereof can favorably deposit the inorganic material, but the slope on the side along the oblique deposition direction of the inorganic material. In the area 42a and its vicinity, as shown by the reference numeral 60 in FIG. 16, unevenness in the deposition of the inorganic material or a poorly-deposited area that is not deposited is formed, and this poorly-deposited area becomes an abnormal area of the alignment film.

The slope 42b on the side facing the oblique vapor deposition direction of the inorganic material in the slope of the concave portion 42 of the underlayer can be said to be the slope facing the oblique deposition direction of the inorganic material on the projection 41. The slope 42a on the side along the oblique vapor deposition direction of the inorganic material can be said to be the slope on the side along the oblique vapor deposition direction of the inorganic material of the projection 41. In the liquid crystal light valve using the inorganic alignment film having the above-mentioned defective region of the inorganic material, the same disorder of the alignment of the liquid crystal as that indicated by the reference numeral 59 in FIG. There is a problem in that display defects such as a decrease in display quality occur.

[0012] The above problems are caused by 3
The problem is not limited to the active matrix type liquid crystal device using the terminal type element, but may be a problem such as an active matrix type liquid crystal device using the two terminal type element represented by a TFD (Thin-Film Diode) element. This is also a problem that occurs in a liquid crystal device using an alignment film formed of an inorganic oblique deposition film formed on a ground layer.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide an alignment film having an abnormal orientation film due to a poorly deposited inorganic material deposited on an inclined surface of a convex portion or a concave portion of a base layer of the orientation film and the vicinity thereof. It is an object of the present invention to provide a liquid crystal device capable of preventing poor alignment of liquid crystal due to the above and suppressing occurrence of display failure, and a method for manufacturing such a liquid crystal device substrate. It is another object of the present invention to provide a projection display device having high display quality using the liquid crystal device.

[0014]

Means for Solving the Problems The present inventor has proposed an alignment film abnormality caused by an inorganic material evaporation defect region generated on a slope of a convex portion or a concave portion of a base layer of an alignment film formed from an inorganic obliquely deposited film or in the vicinity thereof. As a result of repeated experiments and studies in order to prevent the occurrence of the above problems, the cause of the above-mentioned problem is that the element substrate on which a plurality of wirings and a plurality of insulating films are formed is fixed at a certain angle and the inorganic material is fixed from one direction. When forming an orientation film consisting of an inorganic oblique deposition film by vapor deposition, if there is unevenness on the surface of the underlying layer of the orientation film, the slopes on the side along the oblique deposition direction of the inorganic material of the protrusions or recesses and It has been found that the region near the region becomes a shadow of the convex portion or the concave portion, so that the inorganic material is not easily deposited.
Furthermore, as a result of repeated experiments and studies, the present inventor has found that the underlayer of the inorganic alignment film formed of the inorganic obliquely deposited film provided on the liquid crystal layer side surfaces of the pair of substrates facing each other has irregularities on the surface. In the case of having, the slope angle of the slope facing the oblique deposition direction of the inorganic material and the slope facing the oblique deposition direction of the inorganic material of the convex portion or the recess portion of the underlayer is different. Preferably, the slope on the side facing the oblique deposition direction of the inorganic material, the slope angle of the slope along the oblique deposition direction of the inorganic material among the slopes on both sides of the projection or the recess on the surface of the underlayer. It is more preferable to set the magnitude of the inclination angle of the slope on the side along the oblique deposition direction of the inorganic material out of the slopes on both sides of the convex or concave portion to be smaller than the slope angle of the inorganic material and the substrate. Be smaller than the angle between More, to investigate the ability to solve the above problems, it was completed the present invention.

In order to achieve the above object, a liquid crystal device according to the present invention comprises a liquid crystal layer sandwiched between a pair of substrates facing each other, and the surface of the pair of substrates facing the liquid crystal layer is coated with an inorganic material from one direction. An inorganic alignment film formed by obliquely vapor-depositing a material is provided, and the underlayer of at least one of the inorganic alignment films among these inorganic alignment films has an uneven surface, and a convex portion or The inclined surface of the concave portion on the side along the oblique vapor deposition direction of the inorganic material is different from the inclined surface on the side facing the oblique vapor deposition direction of the inorganic material. In the liquid crystal device having such a configuration, the inclination angle of the slope on the side facing the oblique deposition direction of the inorganic material and the slope on the side facing the oblique deposition direction of the inorganic material in the convex or concave portion of the base layer of the inorganic alignment film are Since it is different, when forming an inorganic alignment film by obliquely vapor-depositing an inorganic material on the underlayer from one direction, it is possible to reduce the shadowed area of the convex portion or the concave portion, Or, it is possible to reduce the occurrence of uneven deposition of the inorganic material or a poorly-deposited region where the inorganic material is not deposited on the slope on the side along the oblique deposition direction of the inorganic material in the concave portion and a region in the vicinity thereof. There is no abnormality in the formed inorganic alignment film, and it is possible to prevent poor alignment of the liquid crystal due to the abnormality in the alignment film, and to prevent occurrence of display failure such as a decrease in contrast ratio.

In the liquid crystal device according to the present invention, liquid crystal is sandwiched between a pair of substrates facing each other, and a plurality of pixel electrodes arranged in a matrix on one of the pair of substrates. A plurality of switching means for driving the plurality of pixel electrodes, a plurality of data lines and a plurality of scanning lines respectively connected to the plurality of switching means, and the other of the pair of substrates A counter electrode is provided on the substrate, and an inorganic alignment film formed by obliquely depositing an inorganic material from one direction is provided on the surface of the pair of substrates on the liquid crystal layer side, and at least one of the inorganic alignment films is provided. The underlayer of the inorganic alignment film on the substrate side provided with the switching means has irregularities on the surface, and the convex or concave portions of the underlayer on the side along the oblique vapor deposition direction of the inorganic material. Oblique inclination angle of the side of the slope facing the deposition direction of the plane and the inorganic materials may be different. In the liquid crystal device having such a configuration, at least one of the slopes on the side of the underlayer of the inorganic alignment film that faces the oblique deposition direction of the inorganic material and the slope of the slope facing the oblique deposition direction of the inorganic material is also used. Since the inclination angle is different, when forming an inorganic alignment film by obliquely vapor-depositing an inorganic material from one direction on the underlayer, it is possible to reduce a region that becomes a shadow of the convex portion or the concave portion, It is possible to reduce the occurrence of uneven deposition of the inorganic material and poor deposition areas where the inorganic material is not deposited on the slope and the vicinity of the slope along the oblique deposition direction of the inorganic material in the convex portion or the concave portion of the base layer of the inorganic alignment film. In addition, there is no abnormality in the inorganic alignment film formed on the underlayer having irregularities on the surface, and it is possible to prevent poor alignment of the liquid crystal due to the abnormality of the alignment film, and to prevent display defects such as a decrease in contrast ratio.

In the liquid crystal device of the present invention, the slope on the side facing the oblique vapor deposition direction of the inorganic material is the slope on the side facing the oblique vapor deposition direction of the inorganic material. Is preferably smaller than the inclination angle. In the liquid crystal device having such a configuration, among the slopes on both sides of the convex portion or the concave portion of the underlayer of the inorganic alignment film, the inclination angle of the slope along the oblique vapor deposition direction of the inorganic material is in the oblique vapor deposition direction of the inorganic material. Since the inclination angle of the slope on the side facing the surface is made smaller, the region which becomes a shadow of the convex portion or the concave portion when forming an inorganic alignment film by obliquely depositing an inorganic material on the underlayer from one direction is reduced. As a result, it is possible to reduce the occurrence of unevenness in deposition of the inorganic material and poor deposition areas in which the inorganic material is not deposited on the slope on the side along the oblique deposition direction of the inorganic material in the convex portion or the concave portion of the underlayer of the inorganic alignment film and in the vicinity thereof. Therefore, there is no abnormality in the inorganic alignment film formed on the underlying layer having the irregularities on the surface, and it is possible to prevent the liquid crystal from being defectively aligned due to the alignment film abnormality, and to prevent the occurrence of display defects such as a decrease in contrast ratio. .

Further, in the liquid crystal device of the present invention, the inclination angle of the inclined surface on the side along the oblique vapor deposition direction of the inorganic material among the inclined surfaces on both sides of the convex portion or the concave portion on the surface of the underlayer is different from the vapor deposition direction of the inorganic material. It is more preferable that the angle is smaller than the angle formed by the substrate, and more preferably, the slope angle of the slope along the oblique evaporation direction of the inorganic material is more preferably the slope angle of the slope on both sides of the protrusion or the recess. That is, the size is smaller than the angle between the direction and the substrate. In the liquid crystal device having such a configuration, the inclination angle of the slope on the side along the oblique deposition direction of the inorganic material among the slopes on both sides of the convex portion or the concave portion of the base layer of the inorganic alignment film has the inorganic material deposition direction and the substrate. By forming the inorganic alignment film by obliquely vapor-depositing an inorganic material in one direction on the underlayer, it is possible to eliminate a region serving as a shadow of the convex portion or the concave portion by forming the inorganic orientation film in one direction. Therefore, the uneven surface of the inorganic material and the poor deposition area where the inorganic material is not deposited are not generated on the slope on the side along the oblique deposition direction of the inorganic material in the convex portion or the concave portion of the underlayer of the inorganic alignment film, and in the vicinity thereof, Therefore, there is no abnormality in the inorganic alignment film formed on the underlying layer having the unevenness on the surface, and it is possible to prevent the alignment defect of the liquid crystal due to the alignment film abnormality, and to prevent the occurrence of display defects such as a decrease in contrast ratio.

In the liquid crystal device of the present invention, an oblique deposition film made of silicon oxide can be used as the inorganic alignment film.

Further, the method of manufacturing a substrate for a liquid crystal device according to the present invention is directed to a method for forming an inorganic alignment film by obliquely depositing an inorganic material from one direction on a base layer having an uneven surface formed on the substrate. In the method of manufacturing a substrate, a gray mask having a gradient of the amount of transmitted light is used when forming the projections of the underlayer by a photolithography process.
According to the method of manufacturing a substrate for a liquid crystal device having such a configuration, by changing the gradient of the amount of transmitted light of the gray mask, the convex portion or the concave portion of the underlayer can be formed in a desired shape. The concave portion can be formed to have a desired shape, and in particular, the inclined surface on the side facing the oblique deposition direction of the inorganic material of the convex portion or the concave portion and the inclined surface on the side facing the oblique deposition direction of the inorganic material have a desired inclination angle. Accordingly, a substrate which can be provided in the liquid crystal device of the present invention having any one of the above structures can be manufactured.

Further, in the method for manufacturing a substrate for a liquid crystal device according to the present invention, the inclination angle of the slope along the oblique vapor deposition direction of the inorganic material among the slopes on both sides of the convex portion or the concave portion of the underlayer is determined. It is preferable that the size be equal to or smaller than the angle between the deposition direction and the substrate. According to the method for manufacturing a substrate for a liquid crystal device having such a configuration, when the inorganic alignment film is formed by obliquely depositing an inorganic material from one direction on an underlayer having an uneven surface, the projections or recesses are shadowed. Area can be reduced,
This is preferable in that a region in which the deposition of the inorganic material is poor is reduced and a favorable inorganic alignment film having no abnormality in the alignment film can be formed. Further, in the method for manufacturing a substrate for a liquid crystal device of the present invention, when forming an inorganic alignment film by obliquely vapor-depositing an inorganic material from one direction on a base layer having irregularities on the surface, the deposition direction of the inorganic material and the substrate Of the slopes on both sides of the convex portion or the concave portion of the underlayer is preferably equal to or larger than the slope angle of the slope on the side along the oblique deposition direction of the inorganic material, and more preferably the deposition of the inorganic material. The angle between the direction and the substrate is set to be larger than the inclination angle of the inclined surface on the side along the oblique deposition direction of the inorganic material among the inclined surfaces on both sides of the convex portion or the concave portion of the underlayer. According to the method of manufacturing a liquid crystal device substrate having such a configuration,
When forming an inorganic alignment film by obliquely vapor-depositing an inorganic material from one direction on a base layer having irregularities on the surface, it is possible to eliminate a region that is a shadow of the convex portion or the concave portion, and a defective deposition region of the inorganic material is eliminated. This is preferable because a favorable inorganic alignment film can be formed.

According to a second aspect of the present invention, there is provided a projection type display device including the liquid crystal device according to the present invention, wherein the light source and the light emitted from the light source are modulated. The liquid crystal device includes: a liquid crystal device; and an enlargement projection optical system that enlarges and projects light modulated by the liquid crystal device onto a projection surface. According to the projection type display device of the present invention having such a configuration, by using the liquid crystal device of the present invention having any one of the above configurations, a display device with high display quality can be realized without a decrease in contrast ratio or the like. Can be.

[0023]

DESCRIPTION OF THE PREFERRED EMBODIMENTS [Configuration of Liquid Crystal Device of First Embodiment] The configuration of a liquid crystal device of a first embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming an image display area of a liquid crystal device. FIG. 2 is a plan view of a plurality of adjacent pixel groups on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed. FIG. 3 is a sectional view taken along line AA ′ of FIG.
FIG. 3 is a sectional view taken along the line CC ′ of FIG. 2. In FIGS. 3 and 4, the scale of each layer and each member is different so that each layer and each member have a size recognizable in the drawings.

As shown in FIG. 1, in the liquid crystal device according to the present embodiment, a plurality of pixels formed in a matrix forming an image display area include a pixel electrode 9a and the pixel electrode 9a.
A plurality of pixel switching TFTs 30 for controlling the pixel signal are formed in a matrix, and a data line 6a for supplying an image signal is electrically connected to a source region of the TFT 30. The image signal S1 written to the data line 6a,
S2,..., Sn may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a for each group. In addition, TFT3
The scanning line 3a is electrically connected to the gate of the scanning signal G.
, Gm are applied line-sequentially in this order. The pixel electrode 9a is electrically connected to the drain region of the pixel switching TFT 30, and is a pixel switching TFT which is a switching element.
By closing the switch for a certain period of time,
The image signals S1, S2,... Supplied from the data line 6a
Sn is written at a predetermined timing.

The image signals S1, S2,..., Sn of a predetermined level written in the liquid crystal via the pixel electrodes 9a are exchanged with a counter electrode (described later) formed on a counter substrate (described later) for a certain period. Will be retained. Here, in order to prevent the held image signal from leaking, a storage capacitor 70 is added in parallel with a liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. For example, the voltage of the pixel electrode 9a is held by the storage capacitor 70 for a time that is three orders of magnitude longer than the time when the source voltage is applied. As a method of forming the storage capacitor 70,
A capacitance line 3b, which is a wiring for forming a capacitance with the semiconductor layer, is provided. Instead of providing the capacitance line 3b, a capacitance may be formed between the pixel electrode 9a and the preceding scanning line 3a.

As shown in FIG. 2, a plurality of transparent pixel electrodes 9a are provided in a matrix on the TFT array substrate of the liquid crystal device according to the present embodiment, and each pixel electrode 9a extends along the vertical and horizontal boundaries of the pixel electrodes 9a. A data line 6a, a scanning line 3a and a capacitance line 3b are provided. The data line 6a is connected to the semiconductor layer 1 made of a polysilicon film through the contact hole 5.
a is electrically connected to a source region described later,
The pixel electrode 9a is electrically connected to a drain region described later in the semiconductor layer 1a via the contact hole 8. The scanning line 3a is opposed to a channel region described later (a hatched region falling rightward in the figure) in the semiconductor layer 1a.
Is arranged.

Next, looking at the cross-sectional structure, as shown in FIG. 3, the liquid crystal device of the present embodiment has a pair of transparent substrates, one of which is a TFT array substrate 10, and the other is a TFT array substrate.
And an opposing substrate 20 which is the other substrate disposed to oppose this. The TFT array substrate 10 is made of, for example, a quartz substrate, and the counter substrate 20 is made of, for example, a glass substrate or a quartz substrate. In the TFT array substrate 10,
For example, a pixel electrode 9a made of a transparent conductive film such as an ITO film
Are provided, and each pixel electrode 9a on the TFT array substrate 10 is provided.
A pixel switching TFT 30 for controlling switching of each pixel electrode 9a is provided at a position adjacent to the pixel electrode 9a.
The pixel switching TFT 30 is an LDD (Lightly Do
a scanning line 3a, a channel region 1a 'of the semiconductor layer 1a where a channel is formed by an electric field from the scanning line 3a, the scanning line 3a and the semiconductor layer 1a.
Thin film 2, data line 6a, semiconductor layer 1a for insulating
Lightly doped source region 1b and lightly doped drain region 1
c, a high-concentration source region 1d and a high-concentration drain region 1e of the semiconductor layer 1a.

On the TFT array substrate 10 including the scanning line 3a and the insulating thin film 2, a contact hole 5 and a high concentration drain region 1 leading to the high concentration source region 1d are provided.
The first interlayer insulating film 4 in which the contact holes 8 each leading to e are formed. That is, the data line 6a
Is electrically connected to the high-concentration source region 1d via a contact hole 5 penetrating the first interlayer insulating film 4. Further, on the data line 6a and the first interlayer insulating film 4, a second interlayer insulating film 7 having a contact hole 8 leading to the high-concentration drain region 1e is formed.
That is, the high-concentration drain region 1e is
And contact hole 8 penetrating through second interlayer insulating film 7
Is electrically connected to the pixel electrode 9a via the. The second interlayer insulating film 7 and the pixel electrode 9a serve as a base layer of an inorganic alignment film 36 described later, and the surface of the base layer has irregularities 80. Specifically, the projections and depressions 80 here are the projection 81 of the pixel electrode 9a formed on the capacitance line 3b, the depression 82 near the projection 81, the depression 82 of the pixel electrode 9a formed in the contact hole 8, and the like. The protrusions 81 of the second interlayer insulating film 7 and the like. The pixel electrode 9a and the high-concentration drain region 1e are connected to the same Al film or the scanning line 3b as the data line 6a.
A structure may be employed in which the same polysilicon film is relayed and electrically connected.

The pixel switching TFT 30 preferably has an LDD structure as described above, but may have an offset structure in which impurity ions are not implanted into the low concentration source region 1b and the low concentration drain region 1c.
A self-aligned TFT in which impurity ions are implanted at a high concentration using the gate electrode as a mask to form high-concentration source and drain regions in a self-aligned manner may be used. Further, in the present embodiment, a single gate structure in which only one gate electrode composed of a part of the scanning line 3a of the pixel switching TFT 30 is arranged between the source / drain regions is used. Electrodes may be arranged. At this time, the same signal is applied to each gate electrode. When a TFT is formed with a dual gate (double gate) or triple gate or more as described above, a leak current at a junction between a channel and a source / drain region can be prevented, and a current in an off state can be reduced.
At least one of these gate electrodes may have an LDD structure or an offset structure.

Further, an insulating thin film 2 serving as a gate insulating film is extended from a position facing a gate electrode which is a part of the scanning line 3a and used as a dielectric film. By forming a capacitor electrode 1f and a part of the capacitor line 3b facing the capacitor electrode 1f as a second storage capacitor electrode,
A storage capacitor 70 is configured. More specifically, the high-concentration drain region 1e of the semiconductor layer 1a extends below the data line 6a and the scanning line 3a, and the insulating thin film 2 is formed on a portion of the capacitance line 3b which also extends along the data line 6a and the scanning line 3a. And a first storage capacitor electrode 1f. In particular, when the insulating thin film 2 as a dielectric of the storage capacitor 70 is a gate insulating film of the pixel switching TFT 30 formed on the polysilicon film by high-temperature oxidation,
It is possible to form a thin and high withstand voltage insulating film.
0 can be a relatively large area and a large storage capacity.

On the other hand, a first light-shielding film 23 is provided on the counter substrate 20 in a region facing the data line 6a, the scanning line 3a, and the pixel switching TFT 30 on the TFT array substrate 10, ie, a non-display region of each pixel. Is provided.
Further, on the counter substrate 20 including the first light shielding film 23,
A counter electrode (common electrode) 21 is provided over the entire surface. Like the pixel electrode 9a of the TFT array substrate 10, the counter electrode 21 is also formed of a transparent conductive film such as an ITO film. Due to the presence of the first light shielding film 23, the opposite substrate 20
Does not enter the channel region 1a ', the low-concentration source region 1b, or the low-concentration drain region 1c of the semiconductor layer 1a of the pixel switching TFT 30. Further, the first light-shielding film 23 has a function of improving a contrast ratio, preventing color mixture of color materials, and the like, that is, a function as a so-called black matrix.

In the case of the present embodiment, irregularities are formed on the pixel switching TFT 30 of the TFT array substrate 10, the second interlayer insulating film 7 corresponding to the formation area of the data line 6a and the scanning line 3a, and the pixel electrode 9a, that is, the surface. 80
An inorganic alignment film 36 made of an inorganic obliquely deposited film is provided on the underlayer having the above. This inorganic alignment film 36
TFT 30, first and second interlayer insulating films 4, 7, pixel electrode 9
The TFT array substrate 10 formed with the above is fixed at a certain angle, an inorganic material such as silicon oxide is vapor-deposited from one direction, and simple oblique vapor deposition is performed to grow columnar crystals arranged at a predetermined angle with respect to the substrate. It was formed. 2 and 4
The symbol SA represents the inorganic alignment film 3 on the TFT array substrate 10 side.
6 is the oblique deposition direction of the inorganic material when 6 was formed. The oblique deposition direction SA is a direction orthogonal to the scanning lines 3a and the capacitance lines 3b, and the angle θ formed with the TFT array substrate 10.
1 is in the range of 10 degrees to 30 degrees. The thickness of the inorganic alignment film 36 is about 10 to 50 nm.

As shown in FIGS. 3 and 4, the oblique vapor deposition direction SA of the inorganic material of the projection 81 of the underlayer of the inorganic alignment film 36 is used.
The inclination angle a of the slope 81a on the side facing is different from the inclination angle b of the slope 81b on the side along the oblique deposition direction SA of the inorganic material. The inclination angle b of the slope 81b is the slope 81a.
Is smaller than the inclination angle a. Also, the slope 81b
Is preferably equal to or smaller than the angle θ1 between the deposition direction SA of the inorganic material and the TFT array substrate 10. As an example of the magnitude of the inclination angle b of the convex portion 81 in FIG. 4, the angle θ1 is about 27 degrees, the height h1 of the slope 81b is 0.25 μm, and the horizontal direction (the direction along the substrate surface). When the length L1 is 0.6 μm, it is about 23 degrees. 3 and 4, the slope 8 of the side of the slope of the concave portion 82 of the base layer facing the oblique deposition direction SA of the inorganic material.
2b can be considered as a slope on the side facing the oblique vapor deposition direction SA of the inorganic material on the convex portion, and the slope 82a on the side along the oblique vapor deposition direction SA of the inorganic material on the slope of the concave portion 82 of the underlayer is a convex portion. Can be considered as a slope on the side along the oblique deposition direction SA of the inorganic material.

On the other hand, an inorganic alignment film 42 made of a similar material is also provided on the counter electrode 21 of the counter substrate 20 at a position facing the inorganic alignment film 36 on the TFT array substrate 10 side. The inorganic alignment film 42 is fixed at a certain angle to the counter substrate 20 on which the first light shielding film 23 and the counter electrode 21 are formed, and an inorganic material such as silicon oxide is vapor-deposited from one direction. Are formed by simple oblique vapor deposition for growing columnar crystals arranged in. FIG.
In FIG. 4, the symbol SB indicates the inorganic alignment film 42 on the counter substrate 20 side.
Is the direction of oblique vapor deposition of the inorganic material when is formed. The oblique vapor deposition direction SB has an angle of 10 to 30 degrees with the counter substrate 20. The thickness of the inorganic alignment film 42 is about 10 to 50 nm. This inorganic alignment film 4
The underlayer of No. 2 has a small surface unevenness. Therefore, when the inorganic material is obliquely vapor-deposited, the above-mentioned convex portions and concave portions are not shadowed, and a poor vapor deposition region does not occur. The inclination angles of the slopes on both sides of the portion or the concave side along the oblique deposition direction of the inorganic material and the slopes on the side facing the oblique deposition direction of the inorganic material are substantially the same. Note that the TFT array substrate 10 and the opposing substrate 20 are
The oblique deposition direction SA of the inorganic alignment film 36 provided on the 0 side and the oblique deposition direction of the inorganic alignment film 42 provided on the counter substrate 20 side are arranged to be opposite (shifted by 180 °).

The TFT array substrate 10 and the counter substrate 2
Numeral 0 indicates that the pixel electrode 9a and the counter electrode 21 are arranged so as to face each other.
1 (see FIGS. 11 and 12) is filled with a liquid crystal, and a liquid crystal layer 50 is formed. Liquid crystal layer 50
Takes a predetermined alignment state by the action of the inorganic alignment films 36 and 42 when no electric field is applied from the pixel electrode 9a (when no voltage is applied). On the other hand, when a voltage is applied, the orientation state of the liquid crystal molecules is changed, and the liquid crystal molecules can be displayed by optically identifying them. In this specification, “when no voltage is applied” and “when a voltage is applied” refer to “when the applied voltage to the liquid crystal layer is lower than the threshold voltage of the liquid crystal” and “when the applied voltage to the liquid crystal layer”, respectively. Is greater than or equal to the threshold voltage of the liquid crystal. "

The liquid crystal device of the present embodiment has an inorganic alignment film 36
The inclination angle b of the slope 81b on the side along the oblique vapor deposition direction SA of the inorganic material among the slopes on both sides of the convex portion 81 of the underlayer has a size equal to or less than the angle θ1 formed between the deposition direction SA of the inorganic material and the substrate 10. By doing so, when forming an inorganic alignment film by obliquely vapor-depositing an inorganic material on the underlayer from one direction, it is possible to eliminate a region that becomes a shadow of the convex portion 81. There is no unevenness in deposition of the inorganic material or a poor deposition area where the inorganic material is not deposited on the slope 81b on the side along the oblique deposition direction SA of the inorganic material of the convex portion 81 of the underlayer, and therefore, there is no unevenness on the surface. There is no abnormality in the inorganic alignment film 36 formed on the underlying layer having the above, and it is possible to prevent poor alignment of the liquid crystal due to the abnormality of the alignment film, and to prevent display defects such as a decrease in contrast ratio. In addition, since the inorganic alignment films 36 and 42 are formed of an inorganic obliquely deposited film, they have better light resistance and heat resistance than those formed of an organic film such as polyimide, and thus have improved durability. Liquid crystal device. In the liquid crystal device of the above embodiment, the inclination angle b of the slope 81 b of the projection 81 of the underlayer of the inorganic alignment film 36 on the TFT array substrate 10 side.
Is smaller than the inclination angle a of the inclined surface 81a, and the inclination angle b of the inclined surface 81b is set to be equal to or smaller than the angle θ1 formed between the deposition direction SA of the inorganic material and the TFT array substrate 10; When the unevenness of the surface of the underlayer of the inorganic alignment film 42 is large, the inclination angle of the slope of the protrusion or the recess of the underlayer of the inorganic alignment film 42 along the oblique deposition direction SB is changed to the oblique deposition direction SB. The inclination angle of the slope on the side along the oblique deposition direction SB should be smaller than the inclination angle of the slope on the side facing the substrate.
The angle may be equal to or less than the angle formed by zero.

[Manufacturing Process of Liquid Crystal Device of First Embodiment] Next, a manufacturing process of the first embodiment of the liquid crystal device having the above configuration will be described with reference to FIGS. FIGS. 5 to 9 are process diagrams showing each layer on the TFT array substrate 10 side in each process in a manner corresponding to the AA ′ section in FIG. 2 as in FIG. As shown in step (1) of FIG. 5, a TFT array substrate 10 such as a quartz substrate, a hard glass substrate, a silicon substrate, or the like is prepared. Here, preferably, under an atmosphere of an inert gas such as N2 (nitrogen), about 900 to
Annealing is performed at a high temperature of 1300 ° C., and pre-processing is performed so that distortion generated in the TFT array substrate 10 in a high-temperature process performed later is reduced. That is, the TFT array substrate 10 is preliminarily heat-treated at the same temperature or a higher temperature in accordance with the highest processing temperature at the highest temperature in the manufacturing process.

Next, on the TFT array substrate 10, about 45
In a relatively low temperature environment of 0 to 550 ° C., preferably about 500 ° C., amorphous silicon is formed by low pressure CVD (for example, CVD at a pressure of about 20 to 40 Pa) using a monosilane gas, a disilane gas, or the like at a flow rate of about 400 to 600 cc / min. Form a film. Thereafter, the amorphous silicon film is annealed in a nitrogen atmosphere at about 600 to 700 ° C. for about 1 to 10 hours, preferably for 4 to 6 hours, so that the polysilicon film 1 becomes about 50 to 60 hours. 20
Solid phase growth to a thickness of 0 nm, preferably about 100 nm.

At this time, when an n-channel type pixel switching TFT 30 is formed as the pixel switching TFT 30 shown in FIG.
V such as b (antimony), As (arsenic), and P (phosphorus)
The impurity ions of the group element may be slightly doped by ion implantation or the like. The pixel switching TFT 30
Is a p-channel type, B (boron), Ga
Impurity ions of group III elements such as (gallium) and In (indium) may be slightly doped by ion implantation or the like. The polysilicon film 1 may be directly formed by a low pressure CVD method or the like without passing through the amorphous silicon film. Alternatively, the polysilicon film 1 may be formed by implanting silicon ions into the polysilicon film 1 deposited by a low-pressure CVD method or the like to make the polysilicon film 1 amorphous once (amorphization), and then recrystallize by annealing or the like. .

Next, as shown in step (2), a semiconductor layer 1a having a predetermined pattern as shown in FIG. 2 is formed. That is, in particular, in the region where the capacitance line 3b is formed below the data line 6a and in the region where the capacitance line 3b is formed along the scanning line 3a, a third region extending from the semiconductor layer 1a constituting the pixel switching TFT 30 is provided. One storage capacitor electrode 1f is formed.

Next, as shown in step (3), the first storage capacitor electrode 1f is thermally oxidized together with the semiconductor layer 1a constituting the pixel switching TFT 30 at a temperature of about 900 to 1300 ° C., preferably about 1000 ° C. To form a relatively thin thermally oxidized silicon film having a thickness of about 30 nm, and further deposit a high-temperature silicon oxide film (HTO film) or a silicon nitride film to a relatively thin thickness of about 50 nm by a low pressure CVD method or the like. Then, an insulating thin film 2 serving as a gate insulating film of the pixel switching TFT 30 having a multilayer structure and serving as a dielectric film for forming a capacitor is formed (see FIG. 3). As a result, the thickness of the semiconductor layer 1a and the first storage capacitor electrode If is about 30 to 150 nm, preferably about 35 to 150 nm.
The thickness of the insulating thin film 2 is about 20 to 50 nm.
It will be 150 nm thick, preferably about 30-100 nm thick. By shortening the high-temperature thermal oxidation time as described above, it is possible to prevent warpage due to heat, particularly when a large substrate of about 8 inches is used. However, the insulating thin film 2 having a single-layer structure may be formed only by thermally oxidizing the polysilicon film 1. Although not particularly limited in the step (3), for example, a dose of about 3 × 1 of P ions is applied to the semiconductor layer portion to be the first storage capacitor electrode 1f.
The resistance may be reduced by doping at 0 ¹² / cm ² .

Next, as shown in step (4), low pressure CVD
After depositing the polysilicon film 3 by a method or the like, P is thermally diffused to make the polysilicon film 3 conductive. Alternatively, a doped silicon film in which P ions are introduced simultaneously with the formation of the polysilicon film 3 may be used. Next, as shown in a step (5), the polysilicon film 3 is patterned to form a scanning line 3a and a capacitor line 3b having a predetermined pattern as shown in FIG. The film thickness of the scanning line 3a and the capacitance line 3b is, for example, about 350 nm.

Next, as shown in step (6) in FIG. 6, when the pixel switching TFT 30 shown in FIG. 3 is an n-channel TFT having an LDD structure, the semiconductor layer 1a
First, in order to form the low-concentration source region 1b and the low-concentration drain region 1c, the impurity ions 60 of a group V element such as P are formed at a low concentration by using a gate electrode which is a part of the scanning line 3a as a diffusion mask (FIG. For example, 1 × 10 ¹³ P ions
(At a dose of about 3 × 10 ¹³ / cm ² ). Thereby, the semiconductor layer 1a below the scanning line 3a becomes the channel region 1a '. By the doping of the impurity ions, the capacitance line 3b and the scanning line 3a are also reduced in resistance.

Subsequently, as shown in step (7), the high-concentration source region 1 forming the pixel switching TFT 30 is formed.
After forming a resist layer 62 on the scanning line 3a using a mask wider than the scanning line 3a in order to form the high concentration drain region 1e and the high concentration drain region 1e, the impurity ions 61 of a group V element such as P are also doped with a high concentration. (For example, 1 × 10
Doping (at a dose of ^{15 to} 3 × 10 ¹⁵ / cm ² ).
When the pixel switching TFT 30 is a p-channel type, the semiconductor layer 1a includes a low-concentration source region 1b, a low-concentration drain region 1c, and a high-concentration source region 1d.
And to form the high-concentration drain region 1e,
Doping is performed using impurity ions of a group III element such as (boron). Note that, for example, a TFT having an offset structure may be used without doping low-concentration impurity ions.
Using the gate electrode that is a part of the scanning line 3a as a mask, P
A self-aligned TFT may be formed by an ion implantation technique using ions, B ions, or the like. The resistance of the capacitance line 3b and the scanning line 3a is further reduced by the doping of the impurity.

Further, by repeating the steps (6) and (7) again and performing an impurity ion of a group III element such as a B ion, a p-channel TFT can be formed. This makes it possible to form a data line driving circuit and a scanning line driving circuit, which will be described later, having a complementary structure composed of an n-channel TFT and a p-channel TFT in a peripheral portion on the TFT array substrate 10. As described above, if the semiconductor layer 1a constituting the pixel switching TFT 30 is formed of a polysilicon film, the data line driving circuit and the scanning line driving circuit can be formed in substantially the same steps when forming the pixel switching TFT 30. ,
This is advantageous in manufacturing.

Next, as shown in step (8), the scanning line 3a and the capacitor line 3b in the pixel switching TFT 30 are formed.
For example, TEOS (tetra-ethyl-ortho-silicate) gas, TEB (tetra-ethyl-borate) gas, T
NSG (non-silicate glass), PSG using MOP (tetramethyl oxyfoslate) gas, etc.
(Phosphorous silicate glass), silicate glass film such as BSG (boron silicate glass), BPSG (boron phosphorus silicate glass), and a first interlayer insulating film 4 composed of a single layer or a laminate of a silicon nitride film, a silicon oxide film, or the like. Form. The thickness of the first interlayer insulating film 4 is about 500
~ 1500 nm is preferred.

Next, in the step (9), an annealing process at about 1000 ° C. is performed for about 20 minutes in order to activate the high-concentration source region 1d and the high-concentration drain region 1e. The holes 5 are formed by dry etching such as reactive ion etching or reactive ion beam etching, or by wet etching. Also, a contact hole for connecting the scanning line 3a and the capacitor line 3b to a wiring (not shown) is formed in the same process as the contact hole 5 in the first interlayer insulating film 4.
The hole is opened.

Next, as shown in step (10) of FIG.
On the first interlayer insulating film 4, a low-resistance metal such as Al or a metal silicide having a light shielding property is deposited as a metal film 6 by sputtering or the like to a thickness of about 100 to 500 nm, preferably about 300 nm. As shown in the step (11), the data line 6a is formed by patterning the metal film 6 by a photolithography step, an etching step or the like. Next, as shown in step (12), for example, normal pressure or low pressure CVD or TEO is applied so as to cover the data line 6a.
Using S gas, NSG, PSG, BSG, BPSG
A second interlayer insulating film 7 formed of a single layer or a stacked layer of a silicate glass film, a silicon nitride film, a silicon oxide film, or the like is formed. The thickness of the second interlayer insulating film 7 is about 50
0-1500 nm is preferred.

Next, in the step (13), in the pixel switching TFT 30, a contact hole 8 for electrically connecting the pixel electrode 9a and the high-concentration drain region 1e is formed by reactive ion etching and reactive ion etching. It is formed by dry etching such as ion beam etching. Next, as shown in step (14) of FIG. 8, a transparent conductive film 9 such as an ITO film is deposited on the second interlayer insulating film 7 by sputtering or the like to a thickness of about 50 to 200 nm. . Next, as shown in a step (15), a positive resist 66 is applied on the transparent conductive film 9 and prebaked, and thereafter, a gray mask 67 is arranged above the resist 66 and exposed. The gray mask 67 has a gradient of the amount of transmitted light, and has a slope on the side along the oblique deposition direction SA of the inorganic material in a later step of the convex portion 83 of the transparent conductive film 9 below the resist 66. In the mask portion 67a on the slope 83b, which becomes 81b, the amount of transmitted light gradually increases from the lower portion to the upper portion of the slope 83b, and the mask portion 67 on the top portion 83c of the convex portion 83 and on the contact hole 8 is formed.
b and the mask portion 67c on the extended portion of the lower portion of the slope 83b have a constant transmitted light amount of substantially 0, and the mask portion 67d on the scanning line 3a side from the contact hole 8 has the transmitted light amount of the mask portion 67a which is the most. This is the same as the case where the number is large, and the transmitted light amount is constant.

Next, as shown in the step (16), after the resist 66 is developed, it is post-baked to form a resist pattern 68 on the transparent conductive film 9 in which the slopes on both sides are different. The resist pattern 6 thus formed
8, the inclination angle of the slope 68 b on the slope 83 b of the projection 83 of the transparent conductive film 9 is different from that of the projection 8 of the transparent conductive film 9.
The inclination angle is smaller than the inclination angle of the inclined surface 68a on the third inclined surface 83a.

Then, as shown in step (17) of FIG. 9, after etching, the resist pattern 68 is removed,
The pixel electrode 9a is formed. The inclination angle b of the slope 81b which becomes the slope on the side along the oblique deposition direction SA of the inorganic material in the subsequent step of the projection 81 of the pixel electrode 9a formed in this way.
Is smaller than the inclination angle a of the slope 81a which is the slope facing the oblique deposition direction SA of the inorganic material in a later step. When the liquid crystal device is used for a reflection type liquid crystal device, the pixel electrode 9a may be formed from an opaque material having a high reflectance such as Al.

Next, as shown in step (18), the substrate 10 on which the transparent conductive film 9 and the like are formed is fixed at a certain angle, and an inorganic material such as silicon oxide is vapor-deposited. By a simple oblique vapor deposition method for growing columnar crystals arranged at an angle of 10 to 5 nm as shown in FIG.
An inorganic alignment film 36 of about 0 nm is formed. Here, the oblique deposition direction SA when the inorganic material is obliquely deposited on the substrate 10.
Is a direction orthogonal to the scanning lines 3a and the capacitance lines 3b, and the angle θ1 with the TFT array substrate 10 is 10 degrees or more.
Within the range of 30 degrees. Also, the deposition direction SA of the inorganic material
Θ1 between the TFT array substrate 10 and the
1b, the angle of inclination b or more, preferably the slope 8
1b is made larger than the inclination angle b.

On the other hand, as for the counter substrate 20 shown in FIG. 3, a glass substrate or the like is first prepared, and the first light shielding film 23 and a second light shielding film 53 (see FIGS. 11 and 12) as a frame described later are provided. For example, after sputtering metal chromium, it is formed through a photolithography step and an etching step. Note that these light-shielding films may be formed of a material such as resin black in which carbon or Ti is dispersed in a photoresist, in addition to a metal material such as Cr, Ni (nickel), or Al.

Thereafter, a transparent conductive film such as ITO is formed on the entire surface of the counter substrate 20 by sputtering or the like for about 50 to 2
The counter electrode 21 is formed by depositing to a thickness of 00 nm. Further, similarly to the TFT array substrate 10 side, an inorganic alignment film 42 having a thickness of about 30 nm to 50 nm is formed by oblique evaporation. Here, the oblique deposition direction is the direction indicated by SB shown in FIGS.
6 is different from the oblique deposition direction SA by 180 degrees.

Finally, the T on which each layer is formed as described above
The FT array substrate 10 and the opposing substrate 20 are arranged so that the oblique deposition directions are opposite (shift by 180 °) (the arrangement direction of the columnar crystals in which the TFT array substrate 10 and the opposing substrate 20 are arranged at a predetermined angle is different). Then, the cells are stuck together with a sealing material 51 described later so that the cell thickness becomes 4 μm, and an empty panel is manufactured. As the liquid crystal, use a fluorine type negative type liquid crystal, enclose this liquid crystal in the panel,
The liquid crystal device of the present embodiment is obtained. In this embodiment, since the first light-shielding film 23, the counter electrode 21, and the alignment film 42 are provided in this order on the counter substrate 20 from the substrate side, there is an advantage that the liquid crystal driving voltage does not need to be increased. Instead of this configuration, the counter electrode 21, the first light shielding film 23, and the alignment film 42 may be provided in this order. In that case, the first light shielding film 23 and the alignment film 42
Can be collectively performed, and the advantage that the manufacturing process can be simplified can be obtained.

According to the method of manufacturing a substrate for a liquid crystal device of the present embodiment, by changing the gradient of the amount of transmitted light of the gray mask, the convex portion of the underlayer of the inorganic alignment film can be formed into a desired shape. That is, since the slope on the side facing the oblique deposition direction of the inorganic material and the slope on the side facing the oblique deposition direction of the inorganic material can be formed so as to have a desired inclination angle, A substrate that can be provided in the liquid crystal device of the present embodiment can be manufactured. In the liquid crystal device and the method of manufacturing the substrate for a liquid crystal device according to the above embodiment, the present invention relates to an active matrix type liquid crystal device using a three-terminal element represented by a TFT element and a method of manufacturing the substrate for the liquid crystal device. Was explained when applied to
The present invention can also be applied to an active matrix type liquid crystal device using a two-terminal type device represented by a TFD element and a method for manufacturing the substrate for the liquid crystal device, and a passive matrix type liquid crystal device and a method for manufacturing the substrate for the liquid crystal device. Further, the present invention can be applied to not only a transmission type liquid crystal device but also a reflection type liquid crystal device.

In the liquid crystal device of the above embodiment, the oblique deposition direction SA when the inorganic material is obliquely deposited on the surface of the underlayer is in a direction orthogonal to the scanning lines 3a and the capacitance lines 3b. When the angle θ1 with the TFT array substrate 10 is within the range of 10 degrees to 30 degrees, the protrusion 81
The example in which the inclination angle b of the inclined surface 81b is smaller than the inclination angle a of the inclined surface 81a and the inclination angle b of the inclined surface 81b is equal to or smaller than the angle θ1 between the deposition direction SA of the inorganic material and the TFT array substrate 10 has been described. However, as shown in FIG. 2, the oblique deposition direction SC when the inorganic material is obliquely deposited on the surface of the underlayer is a direction along the scanning line 3a or the capacitance line 3b,
The angle θ2 formed with the TFT array substrate 10 is 10 degrees to 30 degrees.
When the inclination angle b is within the range, the inclination angle b of the slope 81b on the side along the oblique deposition direction SC of the inorganic material of the projection 81 is changed to the inclination angle b of the slope 81a on the side facing the oblique deposition direction SC as shown in FIG. The inclination angle a may be smaller than the inclination angle a, and the inclination angle b of the slope 81 b may be smaller than the angle θ2 between the inorganic material deposition direction SC and the TFT array substrate 10. FIG. 10 is a sectional view taken along the line BB ′ of FIG. 2 when the oblique deposition direction is changed.
In FIG. 10, SD is the oblique deposition direction of the inorganic material when the inorganic alignment film 42 on the counter substrate 20 side is formed. Also in this liquid crystal device, the TFT array substrate 10 on which each layer is formed and the opposite substrate 20 have opposite oblique deposition directions (18).
0 °). As an example of the magnitude of the inclination angle b of the convex portion 81 in FIG.
2 is about 27 degrees, and the height h2 of the slope 81b is 0.93 μm.
m, the length L2 in the horizontal direction (along the substrate surface) is 2
In the case of μm, it is about 25 degrees. In the present embodiment, the magnitude of the tilt angle b is set to a target value by photolithography using a gray mask of ITO. However, when the target tilt angle cannot be obtained by this method when the substrate has large irregularities. Then, an organic or inorganic insulating film of about 1 to 2 μm is formed under the ITO film, a desired inclination angle is formed by photolithography using a gray mask, and then an ITO film is formed. However, in this case, it is necessary to make a contact hole in the insulating film and connect the ITO film and the drain region.

In this embodiment, the case where the present invention is applied to the case where an inorganic alignment film is formed on a base layer having irregularities on the surface formed on a TFT array substrate will be described. The present invention can also be applied to a case where a wiring layer or the like is embedded, and the underlying layer of the inorganic alignment film has a concave surface such as a contact hole formed on a smooth surface.

[Overall Configuration of Liquid Crystal Device] Next, the overall configuration of the liquid crystal device having the above configuration will be described with reference to FIGS. FIG. 11 is a plan view of the TFT array substrate 10 together with the components formed thereon as viewed from the counter substrate 20 side. FIG. It is H 'sectional drawing. 11 and 12, illustration of the first vertical alignment film and the second vertical alignment film is omitted. In FIG. 11, a sealing material 51 is provided on the TFT array substrate 10 along the edge thereof.
Second as a picture frame made of the same or different material
A light-shielding film 53 is provided. In a region outside the sealing material 51, a data line driving circuit 101 and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10, and a scanning line driving circuit 104 is provided on two sides adjacent to this one side. It is provided along. If the delay of the scanning signal supplied to the scanning line 3a does not matter, it goes without saying that the scanning line driving circuit 104 may be provided on only one side. Further, the data line driving circuits 101 may be arranged on both sides along the side of the image display area. For example, odd-numbered data lines 6
a supplies an image signal from a data line driving circuit arranged along one side of the image display area, and data lines in even-numbered columns are data arranged along the opposite side of the image display area. An image signal may be supplied from a line drive circuit. When the data lines 6a are driven in a comb-tooth shape in this manner, the area occupied by the data line driving circuit can be expanded, so that a complicated circuit can be formed.
Further, on the remaining one side of the TFT array substrate 10, a plurality of wirings 105 for connecting between the scanning line driving circuits 104 provided on both sides of the image display area are provided. Also,
At least one corner of the counter substrate 20 is provided with a conductive material 106 for establishing electrical connection between the TFT array substrate 10 and the counter substrate 20. Then, as shown in FIG. 12, the sealing material 5 shown in FIG.
1 has the same contour as the sealing material 5
1 is fixed to the TFT array substrate 10.

As described above, with reference to FIGS. 1 to 9, on the TFT array substrate 10 of the liquid crystal device in each of the embodiments, the quality, defects and the like of the liquid crystal device during the production and shipping are further inspected. May be formed. The data line driving circuit 101 and the scanning line driving circuit 10
Instead of providing the TFT 4 on the TFT array substrate 10, for example, a driving LSI mounted on a TAB (Tape Automated Bonding) substrate via an anisotropic conductive film provided on the periphery of the TFT array substrate 10. The connection may be made electrically and mechanically. For example, a TN (Twisted Nema) is provided on each of the side of the opposite substrate 20 on which the projected light is incident and the side of the TFT array substrate 10 on which the emitted light is emitted.
tic) mode, VA (Vertically Aligned) mode, PD
A polarizing film, a retardation film, a polarizing means, and the like are arranged in a predetermined direction according to an operation mode such as an LC (Polymer Dipersed Liquid Crystal) mode and a normally white mode / normally black mode.

The liquid crystal device in each of the embodiments described above is, for example, a color liquid crystal projector (projection display device).
Can be applied to In that case, three liquid crystal devices are used as light valves for RGB, and light of each color separated through a dichroic mirror for RGB color separation is incident on each light valve as projection light. become. Therefore, in each embodiment, the opposing substrate 20 is not provided with a color filter. However, the pixel electrode 9 on which the first light shielding film 23 is not formed
An RGB color filter may be formed on the opposing substrate 20 together with the protective film in a predetermined area opposing to a. With this configuration, a color liquid crystal projector can be provided even when light from a light source is directly incident on a light valve without performing color separation using a dichroic mirror. Further, the present invention can be applied to a color liquid crystal device such as a direct-view or reflection type color liquid crystal television other than the liquid crystal projector, to the liquid crystal device in each embodiment. Further, a micro lens may be formed on the counter substrate 20 so as to correspond to one pixel. In this case, a bright liquid crystal device can be realized by improving the efficiency of collecting incident light. Furthermore, a dichroic filter that produces RGB colors using light interference may be formed by depositing many layers of interference layers having different refractive indexes on the counter substrate 20. According to the counter substrate with a dichroic filter, a brighter color liquid crystal device can be realized. Also, the switching element provided in each pixel has been described as a normal stagger type or coplanar type polysilicon TFT.
Other forms of TF such as FT and amorphous silicon TFT
Each embodiment is also effective for T.

[Electronic Apparatus] As an example of an electronic apparatus using the liquid crystal device according to the embodiment of the present invention, a configuration of a projection display device will be described with reference to FIG. In FIG. 13, a projection type display device 1100 prepares three liquid crystal devices according to the above-described embodiments, and each of the liquid crystal devices 96 for RGB.
FIG. 2 shows a schematic configuration diagram of an optical system of a projection type liquid crystal device used as 2R, 962G and 962B. The optical system of the projection display device of this example includes a light source device 920 and a uniform illumination optical system 9.
23 are employed. The projection display apparatus further includes a color separation optical system 924 as a color separation unit that separates the light beam W emitted from the uniform illumination optical system 923 into red (R), green (G), and blue (B). Three light valves 925R, 9 as modulation means for modulating each color light flux R, G, B
25G, 925B, a color synthesizing prism 910 as a color synthesizing means for re-synthesizing the modulated color light flux, and a projection lens unit 906 as a projection means for enlarging and projecting the synthesized light flux onto the surface of the projection surface 100. Have. Further, a light guide system 927 for guiding the blue light flux B to the corresponding light valve 925B is also provided.

The uniform illumination optical system 923 includes two lens plates 921 and 922 and a reflection mirror 931. The two lens plates 921 and 922 are arranged so as to be orthogonal to each other with the reflection mirror 931 interposed therebetween. Uniform illumination optical system 923
The two lens plates 921 and 922 each include a plurality of rectangular lenses arranged in a matrix. The light beam emitted from the light source device 920 is transmitted to the first lens plate 92.
The light is split into a plurality of partial light beams by one rectangular lens.
Then, these partial light beams are divided into three light valves 925R and 925R by the rectangular lens of the second lens plate 922.
Superimposed around 5G and 925B. Therefore, by using the uniform illumination optical system 923, the three light valves 925R, 925G, and 925 can be used even when the light source device 920 has an uneven illuminance distribution in the cross section of the emitted light beam.
B can be illuminated with uniform illumination light.

Each color separation optical system 924 includes a blue-green reflecting dichroic mirror 941, a green reflecting dichroic mirror 942, and a reflecting mirror 943. First, in the blue-green reflecting dichroic mirror 941, the blue light beam B and the green light beam G included in the light beam W are reflected at right angles, and head toward the green reflecting dichroic mirror 942. The red light flux R passes through the mirror 941, is reflected at a right angle by the rear reflection mirror 943, and is emitted from the emission section 944 of the red light flux R to the color combining prism 910 side. Next, in the green reflection dichroic mirror 942, only the green light flux G among the blue and green light fluxes B and G reflected by the blue-green reflection dichroic mirror 941 is reflected at a right angle, and the color is emitted from the emission part 945 of the green light flux G. The light is emitted to the side of the combining optical system. The blue light flux B that has passed through the green reflection dichroic mirror 942 is emitted from the emission section 946 of the blue light flux B to the light guide system 927 side. In this example,
From the light emitting portion of the light beam W of the uniform illumination optical element, the light emitting portions 944, 945, and 94 of the respective color light beams in the color separation optical system 924.
6 are set to be approximately equal.

The red and green luminous flux R of the color separation optical system 924
Condensing lenses 951 and 952 are arranged on the emission sides of the G emission sections 944 and 945, respectively. Therefore,
The red and green luminous fluxes R and G emitted from the respective emission sections are incident on these condenser lenses 951 and 952 and are parallelized.
The red and green light fluxes R and G thus collimated enter the light valves 925R and 925G and are modulated, and image information corresponding to each color light is added. That is, the switching of these liquid crystal devices is controlled by driving means (not shown) in accordance with the image information, whereby each color light passing therethrough is modulated. On the other hand, the blue luminous flux B is
The light is guided to the corresponding light valve 925B via the light guide system 927, where the light is similarly modulated according to the image information. The light valves 925R, 925 of this example
G and 925B are additionally incident-side polarizing means 960, respectively.
R, 960G and 960B, and the output side polarization means 961R,
The liquid crystal light valve is composed of 961G, 961B and liquid crystal devices 962R, 962G, 962B disposed therebetween.

The light guide system 927 includes a light emitting portion 94 for the blue light beam B.
No. 6, a condenser lens 954 disposed on the exit side, an incident-side reflection mirror 971, an exit-side reflection mirror 972, an intermediate lens 973 disposed between these reflection mirrors, and a front side of the light valve 925B. And a condenser lens 953. The blue light flux B emitted from the condenser lens 954 is transmitted through the light guide system 927 to the liquid crystal device 962B.
And modulated. The optical path length of each color beam, that is,
Each liquid crystal device 962R, 962G, 9
The distance to 62B is the longest for the blue luminous flux B, and therefore the loss of light quantity of the blue luminous flux is the largest. However, by interposing the light guide system 927, the loss of light amount can be suppressed. Each light valve 925R, 925G,
Each of the color light beams R, G, and B modulated through 925B is incident on a color combining prism 910, where it is combined. Then, the light combined by the color combining prism 910 is enlarged and projected on the surface of the projection surface 100 at a predetermined position via the projection lens unit 906.

In this example, the liquid crystal devices 962R, 962
G and 962B are the liquid crystal devices according to the embodiment of the present invention described with reference to FIGS. Furthermore, when the liquid crystal device is used for a light valve of a projection display device, the intensity of incident light is higher than when the liquid crystal device is used as a direct-view type liquid crystal display device, and the alignment film is made of an organic alignment film such as polyimide. Although the deterioration of the film is remarkably easy to occur, the liquid crystal device 962R of the present embodiment reduces the occurrence of display defects due to the deterioration of the alignment film by forming the alignment film from an inorganic oblique evaporation film such as silicon oxide. 962G, 962B
Is provided, it is possible to realize a projection type display device with high display quality even after long use. Further, the liquid crystal devices 962R, 962G, 962B of the embodiment
Are the protrusions 81 of the underlying layer of the inorganic alignment film 36 as described above.
Since the slope b of the slope 81b on the side along the oblique deposition direction of the inorganic material is smaller than the angle between the deposition direction SA of the inorganic material and the substrate 10, the inorganic orientation There is no occurrence of uneven deposition of the inorganic material or defective deposition areas where the inorganic material is not deposited on the slope 81b on the side along the oblique deposition direction of the inorganic material of the convex portion 81 of the base layer of the film 36 and the vicinity thereof. Accordingly, such liquid crystal devices 962R and 962R
According to the projection display device provided with 62G and 962B, a display device with high display quality can be realized without a decrease in contrast ratio due to poor alignment of liquid crystal due to an alignment film abnormality.

[0068]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present inventor conducted experiments for demonstrating the effects of the liquid crystal device of the present invention. Hereinafter, the results of this experiment will be described. As an example, silicon oxide is applied to both the TFT array substrate on which the TFT elements and the pixel electrodes and the like shown in the first embodiment are formed, and the opposite substrate on which the black matrix (light shielding film) and the opposite electrodes are formed. Oblique deposition was performed so that the film thickness became 20 nm, and an inorganic alignment film was formed. The pixel electrode of the underlying layer of the inorganic alignment film is formed by a photolithography process using a gray mask, and the slope angle of the slope facing the oblique deposition direction among the slopes of the protrusions is 35 degrees, The inclination angle of the slope on the side along the oblique deposition direction was 25 degrees. Here, the oblique deposition direction when silicon oxide is obliquely deposited on the substrate is a direction orthogonal to the scanning lines and the capacitance lines formed on the TFT array substrate, and the angle between the substrate and the substrate is about 27 degrees. . The angle formed between the silicon oxide vapor deposition direction and the substrate was equal to or larger than the inclination angle of the slope on the side along the oblique vapor deposition direction of the projection on the surface of the pixel electrode. Then, a seal portion is formed on the surface of one of the substrates on the side to be the liquid crystal layer side by seal printing, leaving a liquid crystal injection port.
The FT array substrate and the opposing substrate are bonded together to form a liquid crystal panel, and a fluorine-based negative liquid crystal is injected into the panel from the liquid crystal injection port, and the injection port is closed with a sealing material. Produced. For comparison, when forming a pixel electrode in the photolithography process, a pixel electrode is formed using a normal mask instead of a gray mask, and an oblique deposition film (inorganic alignment film) made of silicon oxide is formed thereon. A liquid crystal device of Comparative Example 1 was manufactured in the same manner as in the above example except that the formed TFT array substrate was used. In the liquid crystal device of Comparative Example 1, the slopes on both sides of the convex portion of the pixel electrode of the underlayer of the oblique deposition film (inorganic alignment film) made of silicon oxide (the slope along the oblique deposition direction of the inorganic material and the inorganic material) (The slope facing the oblique vapor deposition direction) was 35 degrees, which was almost the same size.

The display characteristics of the liquid crystal device of the example thus manufactured and the liquid crystal device of Comparative Example 1 were examined using the device shown in FIG. 14 includes a light source 300, a first fly-eye lens 301, and a second fly-eye lens 30.
2, the polarization conversion optical system 303, the first polarizing plate 304, the second
, A projection lens 308, and an illuminometer 309. For the measurement of the display characteristics, the liquid crystal device manufactured as the sample 400 is disposed between the first and second polarizing plates 304 and 307, light is emitted from the light source 300, and the brightness (lx) is measured by the illuminometer 309. And the contrast was measured. As a result, the brightness of the liquid crystal device of Comparative Example 1 (l
x) is 94.3 and the contrast is 157, whereas the brightness (lx) of the liquid crystal device of the embodiment is 97.6 and the contrast is 326, and the liquid crystal device of the embodiment has brighter display. As a result, the contrast was at least twice as high as that of Comparative Example 1, indicating that the display quality was excellent.

When irradiation with light having an intensity of 5 lm / mm ² was performed and the irradiation time and the change in the liquid crystal display were examined, the light valve of the example showed that the initial alignment of the liquid crystal molecules caused by the deterioration of the alignment film was low. There was no disturbance, and the reliability was 5 times higher than that of the liquid crystal device of Comparative Example 2 using a vertical alignment film made of polyimide instead of the oblique deposition film made of silicon oxide.
From the above, it can be seen that when the liquid crystal device of this embodiment is used for a light valve, a light valve with good display quality and high reliability can be obtained.

[0071]

As described in detail above, according to the liquid crystal device of the present invention, when forming an inorganic alignment film by obliquely depositing an inorganic material from one direction on a base layer having irregularities on the surface. Since the shadowed area of the projections or the depressions can be reduced, the inorganic material is deposited on the slopes on the side along the oblique deposition direction of the inorganic materials of the projections or the depressions of the base layer of the inorganic alignment film and in the vicinity thereof. It is possible to reduce the occurrence of unevenness and poor deposition regions where vapor deposition is not performed.Therefore, there is no abnormality in the inorganic alignment film formed on the underlying layer having irregularities on the surface, and it is possible to prevent poor alignment of the liquid crystal due to the abnormality in the alignment film. It is possible to prevent display defects such as a reduction in the ratio. Then, by employing the present liquid crystal device, a projection display device with high display quality can be realized.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating an equivalent circuit such as various elements and wirings provided in a plurality of pixels in a matrix forming an image display area of a liquid crystal device according to a first embodiment of the present invention.

FIG. 2 is a plan view showing a plurality of pixel groups adjacent to each other on a TFT array substrate of the liquid crystal device.

FIG. 3 is a sectional view taken along line A-A 'of FIG.

FIG. 4 is a sectional view taken along line C-C 'of FIG.

FIG. 5 is a process sectional view showing the manufacturing process of the liquid crystal device in order.

FIG. 6 is a continuation of the same process sectional view.

FIG. 7 is a continuation of the same process sectional view.

FIG. 8 is a continuation of the same process sectional view.

FIG. 9 is a continuation of the same process sectional view.

FIG. 10 is a cross-sectional view of FIG.
It is B 'sectional drawing.

FIG. 11 is a plan view of the TFT array substrate of the liquid crystal device according to each embodiment together with the components formed thereon as viewed from the counter substrate side.

FIG. 12 is a sectional view taken along line H-H ′ of FIG. 11;

FIG. 13 is a schematic configuration diagram of a projection display device which is an example of an electronic apparatus using a liquid crystal device.

FIG. 14 is a schematic configuration diagram of a device used for measuring display characteristics of a liquid crystal device manufactured in an experimental example.

FIG. 15 is a cross-sectional view illustrating an example of a conventional liquid crystal device.

FIG. 16 is a schematic view showing a conventional liquid crystal device substrate on which a vertical alignment film made of an inorganic oblique deposition film is formed.

[Explanation of symbols]

 3a scanning line 6a data line 9a pixel electrode 10 TFT array substrate 20 counter substrate 30 pixel switching TFT 36, 42 inorganic alignment film 50 liquid crystal layer 66 resist 67 gray mask 68 resist pattern 80 unevenness 81 convex portion 81a slope 81b slope 82 recess 82a Slope 82b Slope a Inclination angle b Inclination angle

Claims (9)

[Claims] A liquid crystal layer is sandwiched between a pair of substrates opposed to each other, and an inorganic alignment film formed by obliquely depositing an inorganic material from one direction on a surface of the pair of substrates on a liquid crystal layer side. The underlayer of at least one of the inorganic alignment films is provided with irregularities on its surface, and the slopes on the side along the oblique deposition direction of the inorganic material of the protrusions or recesses of the underlayer are provided. A liquid crystal device characterized in that the inclination angle of the inclined surface facing the oblique deposition direction of the inorganic material is different from that of the inclined surface. 2. A liquid crystal is sandwiched between a pair of substrates facing each other, and one of the pair of substrates has
A plurality of pixel electrodes arranged in a matrix, a plurality of switching means for driving the plurality of pixel electrodes, a plurality of data lines and a plurality of scanning lines respectively connected to the plurality of switching means are provided. A counter electrode is provided on the other substrate of the pair of substrates, and an inorganic alignment film formed by obliquely depositing an inorganic material from one direction on the surface of the pair of substrates on the liquid crystal layer side is provided. At least the underlayer of the inorganic alignment film on the substrate side on which the switching means is provided among these inorganic alignment films has irregularities on the surface, and the oblique deposition of the inorganic material on the projections or depressions of the underlayer is performed. A liquid crystal device, characterized in that the slopes on the side facing the direction and the side facing the oblique deposition direction of the inorganic material have different inclination angles. 3. The liquid crystal device according to claim 1, wherein, of the slopes on both sides of the protrusion or the recess of the underlayer, the slope of the slope along the oblique vapor deposition direction of the inorganic material has an inclination angle of the inorganic material. A liquid crystal device characterized in that the inclination angle of the inclined surface facing the direction of vapor deposition is smaller than the inclination angle of the inclined surface. 4. An inclination angle of a slope on a side along an oblique vapor deposition direction of an inorganic material among slopes on both sides of a convex portion or a concave portion of the underlayer is smaller than an angle formed between the inorganic material deposition direction and a substrate. The liquid crystal device according to claim 3, wherein 5. The liquid crystal device according to claim 1, wherein the inorganic alignment film is an obliquely deposited film made of silicon oxide. 6. A method for manufacturing a substrate for a liquid crystal device, comprising forming an inorganic alignment film by obliquely depositing an inorganic material from one direction on a base layer having an uneven surface on a substrate formed on the substrate. The method for manufacturing a substrate for a liquid crystal device according to claim 1, wherein a gray mask having a gradient of the amount of transmitted light is used in the formation in the photolithography process. 7. An inclination angle of a slope on a side along an oblique vapor deposition direction of an inorganic material among slopes on both sides of a convex portion or a concave portion of the base layer, the inclination angle of which is equal to or smaller than an angle between the inorganic material deposition direction and the substrate. 7. The method for manufacturing a substrate for a liquid crystal device according to claim 6, wherein: 8. When forming an inorganic alignment film by obliquely depositing an inorganic material from one direction on a base layer having an uneven surface, the angle between the oblique deposition direction of the inorganic material and the substrate is set to the lower angle. 8. The substrate for a liquid crystal device according to claim 6, wherein a slope of the slope on both sides of the convex portion or the concave portion of the formation layer on the side along the oblique deposition direction of the inorganic material is equal to or larger than the slope angle. Production method. 9. A projection display device comprising the liquid crystal device according to claim 1, wherein the liquid crystal device modulates light emitted from the light source, and the liquid crystal device. And a magnifying projection optical system for magnifying and projecting the light modulated by the method on a projection surface.