JP2002252252A - Semiconductor mounting apparatus for ultrasonic-flip chip connection and ultrasonic-flip chip connecting method - Google Patents

Semiconductor mounting apparatus for ultrasonic-flip chip connection and ultrasonic-flip chip connecting method

Info

Publication number
JP2002252252A
JP2002252252A JP2001051644A JP2001051644A JP2002252252A JP 2002252252 A JP2002252252 A JP 2002252252A JP 2001051644 A JP2001051644 A JP 2001051644A JP 2001051644 A JP2001051644 A JP 2001051644A JP 2002252252 A JP2002252252 A JP 2002252252A
Authority
JP
Japan
Prior art keywords
semiconductor chip
ultrasonic
circuit board
thermal expansion
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001051644A
Other languages
Japanese (ja)
Inventor
Naoto Nakatani
直人 中谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Avionics Co Ltd
Original Assignee
Nippon Avionics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Avionics Co Ltd filed Critical Nippon Avionics Co Ltd
Priority to JP2001051644A priority Critical patent/JP2002252252A/en
Publication of JP2002252252A publication Critical patent/JP2002252252A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides

Abstract

PROBLEM TO BE SOLVED: To provide an ultrasonic-flip chip mounting apparatus and its method which reduce distortion of a joint spot regardless of a material of circuit substrate and a size of chip and has high reliability of connection. SOLUTION: The ultrasonic-flip chip mounting apparatus heats the circuit substrate for mounting the semiconductor chip, and the semiconductor chip is mounted on the circuit substrate by applying ultrasonic frequency to an suction nozzle when sucking the semiconductor with the suction nozzle of an ultrasonic head. Moreover, the apparatus is provided with a heating section on the ultrasonic head, the ultrasonic vibration applied to the semiconductor chip in the state that the semiconductor chip is heated with the heating section so that the amount of thermal expansion of the semiconductor chip is approximately the same as that of the circuit substrate, thereby, the semiconductor chip is joined to the circuit substrate.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体ベアチップを
回路基板上に超音波フリップチップ実装する装置および
その方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for ultrasonically flip-chip mounting a semiconductor bare chip on a circuit board.

【0002】[0002]

【従来の技術】近年における電子機器の高性能化、小型
化に対する要求を満たすため、半導体ベアチップを回路
基板に直接接続する所謂フリップチップ実装が増加して
いる。回路基板にベアチップを接続するには、従来はん
だ付けが一般的であったが、半導体ベアチップの電極ピ
ッチが100μmあるいはそれ以下と狭いため、はんだ
付け以外の方法を採ることが多い。
2. Description of the Related Art In order to satisfy the recent demand for higher performance and smaller size of electronic equipment, so-called flip-chip mounting for directly connecting a semiconductor bare chip to a circuit board has been increasing. Conventionally, soldering is generally used to connect a bare chip to a circuit board. However, since the electrode pitch of a semiconductor bare chip is as narrow as 100 μm or less, a method other than soldering is often used.

【0003】はんだ付け以外のフリップチップ実装方法
の例として次のものが公知である。 ア) 半導体ベアチップ電極と回路基板パッド間に異方
性導電フィルムを介在させ、圧接する方法。 イ) 半導体ベアチップ電極と回路基板パッド間に非導
電性樹脂をアンダーフィル材として介在させ、加熱圧接
する方法。 ウ) 金めっきされた回路基板パッド上で半導体ベアチ
ップ電極に形成された金バンプを超音波振動させること
によりパッドとバンプを接合する方法。 上記方法の内、ウ)項の超音波による接合は、ア)項、
イ)項の圧接よりも接続信頼性が高く経年変化が少ない
ため、高信頼性を要求される電子機器のフリップチップ
実装に適している。
The following are known as examples of flip-chip mounting methods other than soldering. A) A method in which an anisotropic conductive film is interposed between a semiconductor bare chip electrode and a circuit board pad and pressed. B) A method in which a non-conductive resin is interposed between a semiconductor bare chip electrode and a circuit board pad as an underfill material, and heated and pressed. C) A method in which a gold bump formed on a semiconductor bare chip electrode is ultrasonically vibrated on a gold-plated circuit board pad to bond the pad and the bump. Of the above methods, the ultrasonic bonding of the item (c) is performed by the method (a),
Since the connection reliability is higher and the secular change is smaller than the pressure welding described in item a), it is suitable for flip-chip mounting of electronic equipment that requires high reliability.

【0004】この超音波による接合は、半導体チップの
電極の上に金製のバンプをワイヤボンディングまたはめ
っきなどによって形成し、この半導体チップを吸着ノズ
ルによって吸着、保持して取り扱い、位置決めされた回
路基板上の表面が金めっきされたパッドに対向させて載
置し、前記バンプを回路基板のパッドに押し当てた状態
で、吸着ノズルの揺動できるように支持された支持点と
吸着面との間に超音波振動を与えて半導体チップを振動
させることにより、バンプとパッド間を摩擦させ、この
摩擦熱により接合するものである。
[0004] This ultrasonic bonding is performed by forming a gold bump on the electrode of a semiconductor chip by wire bonding or plating, adsorbing, holding, handling, and positioning the semiconductor chip by an adsorption nozzle. The upper surface is placed facing the gold-plated pad, and in a state where the bump is pressed against the pad of the circuit board, between the support point supported so that the suction nozzle can swing and the suction surface. By applying ultrasonic vibration to the semiconductor chip to vibrate the semiconductor chip, the bump and the pad are rubbed, and the bump and the pad are joined by the frictional heat.

【0005】[0005]

【発明が解決しようとする課題】このような超音波によ
る接合に供する従来の超音波フリップチップ接続用半導
体実装装置は、吸着ノズルを常温に保ち、半導体チップ
が実装される回路基板側の温度をステージ上のホットプ
レートにより摂氏100〜250度に加熱することで接
合性を高める方式が取られている。従って、この従来の
方式では半導体チップと回路基板との接合が行われる時
点では熱膨張率の大きな樹脂系回路基板の温度が高く、
熱膨張率の小さい半導体チップの温度が低い状態にある
ので接合が完了して常温に復帰した時点では、より熱膨
張率が大きく温度が高かった回路基板側が半導体チップ
側と比較して大きく収縮することになるから接合部分に
大きな歪みが残るという問題があった。この傾向は、ガ
ラスエポキシ等の樹脂基板に限らず、ガラス基板やセラ
ミック基板の場合でも程度の差こそあれ同様である。
A conventional ultrasonic flip-chip connecting semiconductor mounting apparatus for performing such ultrasonic bonding is to maintain a suction nozzle at a normal temperature and to maintain a temperature on a circuit board side on which a semiconductor chip is mounted. A method is adopted in which the bonding property is increased by heating the stage to 100 to 250 degrees Celsius using a hot plate on a stage. Therefore, in this conventional method, when the semiconductor chip and the circuit board are joined, the temperature of the resin-based circuit board having a large coefficient of thermal expansion is high,
Since the temperature of the semiconductor chip having a small coefficient of thermal expansion is low, when the bonding is completed and the temperature is returned to normal temperature, the circuit board side having a larger coefficient of thermal expansion and higher temperature contracts more than the semiconductor chip side. As a result, there is a problem that large distortion remains at the joint. This tendency is not limited to a resin substrate such as a glass epoxy or the like, but is the same to some extent even in the case of a glass substrate or a ceramic substrate.

【0006】例えば、回路基板として熱膨張率7ppm
/℃のセラミック基板を使用した場合、室温25℃にお
いて、回路基板下のステージ上のホットプレートを15
0℃に設定し、半導体チップを保持するノズルの加熱を
なしとする。このような場合、チップ長15mmに相当
する回路基板15mm分の25℃から150℃までの熱
膨張量が約13μmであり、一方半導体チップは25℃
のままで寸法は変わらないので、接合後常温に復帰した
際に、半導体チップはセラミック基板から約13μm収
縮しようとする応力を受けることになる。また、この応
力による接合部分の歪みは、チップサイズが大きくなる
ほど顕著になり、それに伴って接続信頼性が低下すると
いう欠点があった。本発明は、上記課題を解決するため
になされたもので、回路基板材質およびチップサイズに
よらず接合箇所の歪みを少なくすることで接続信頼性を
高めることができる超音波フリップチップ接続用半導体
実装装置および超音波フリップチップ接続方法を提供す
ることを目的とする。
For example, a circuit board has a thermal expansion coefficient of 7 ppm.
When using a ceramic substrate at a temperature of 25 ° C., the hot plate on the stage
The temperature is set to 0 ° C., and the nozzle holding the semiconductor chip is not heated. In such a case, the amount of thermal expansion from 25 ° C. to 150 ° C. for 15 mm of the circuit board corresponding to a chip length of 15 mm is about 13 μm, while the semiconductor chip is at 25 ° C.
Since the dimensions do not change as they are, the semiconductor chip receives a stress of about 13 μm shrinking from the ceramic substrate when returning to normal temperature after bonding. In addition, the distortion of the joint due to the stress becomes more remarkable as the chip size increases, and there is a disadvantage that the connection reliability is reduced accordingly. SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and it is an ultrasonic flip-chip connection semiconductor mounting that can improve connection reliability by reducing distortion at a joint regardless of a circuit board material and a chip size. It is an object to provide an apparatus and an ultrasonic flip chip connection method.

【0007】本発明は、従来の超音波フリップチップ接
続方法が回路基板のみの加熱であるため接合後の冷却で
回路基板のみが収縮し、接合部に歪みが生ずることに着
目してなされたものであり、回路基板と同時に半導体チ
ップもその熱膨張率に応じた温度に加熱することで略同
じ熱膨張量となるようにすることで常温への冷却後の歪
みをなくすことができることに思い至ったものである。
The present invention has been made by paying attention to the fact that the conventional ultrasonic flip chip connection method heats only the circuit board, so that only the circuit board shrinks due to cooling after joining, and distortion occurs at the joint. By heating the circuit board and the semiconductor chip to a temperature corresponding to the coefficient of thermal expansion at the same time as the circuit board so that they have substantially the same amount of thermal expansion, it is possible to eliminate distortion after cooling to room temperature. It is something.

【0008】[0008]

【課題を解決するための手段】請求項1の超音波フリッ
プチップ接続用半導体実装装置は半導体チップを実装す
る回路基板を加熱すると共に吸着ノズルを備える超音波
ヘッドで半導体チップを吸着しながら、この吸着ノズル
に超音波振動を与えて、この半導体チップを前記回路基
板上に実装する半導体実装装置において、前記超音波ヘ
ッドに加熱部を備え、この加熱部で前記半導体チップを
前記回路基板の熱膨張量と略同量の熱膨張量となるよう
に加熱した状態で超音波振動を与えて半導体チップを回
路基板に接合することを特徴とするものである。
According to a first aspect of the present invention, there is provided an ultrasonic flip-chip connecting semiconductor mounting apparatus which heats a circuit board on which a semiconductor chip is mounted and adsorbs the semiconductor chip by an ultrasonic head having an adsorption nozzle. In a semiconductor mounting apparatus for applying an ultrasonic vibration to a suction nozzle to mount the semiconductor chip on the circuit board, the ultrasonic head is provided with a heating section, and the heating section causes the semiconductor chip to thermally expand the circuit board. The method is characterized in that the semiconductor chip is joined to the circuit board by applying ultrasonic vibration in a state where the semiconductor chip is heated so as to have a thermal expansion amount substantially equal to the amount.

【0009】請求項2の超音波フリップチップ接続方法
は、半導体チップを実装する回路基板を加熱すると共に
吸着ノズルを備える超音波ヘッドで半導体チップを吸着
しながら、この吸着ノズルに超音波振動を与えて、この
半導体チップを前記回路基板上に実装する半導体実装装
置において、前記超音波ヘッドに加熱部を備え、この加
熱部で前記半導体チップを前記回路基板の熱膨張量と略
同量の熱膨張量となるように加熱した状態で超音波振動
を与えて半導体チップを回路基板に接合することを特徴
とするものである。
According to a second aspect of the present invention, an ultrasonic vibration is applied to the suction nozzle while heating the circuit board on which the semiconductor chip is mounted and suctioning the semiconductor chip with an ultrasonic head having a suction nozzle. In a semiconductor mounting apparatus for mounting the semiconductor chip on the circuit board, the ultrasonic head is provided with a heating section, and the heating section causes the semiconductor chip to expand by approximately the same amount as the thermal expansion of the circuit board. The method is characterized in that the semiconductor chip is bonded to the circuit board by applying ultrasonic vibration in a state where the semiconductor chip is heated to a certain amount.

【0010】請求項3の超音波フリップチップ接続用半
導体実装装置は、半導体チップを実装する回路基板を加
熱すると共に吸着ノズルを備える超音波ヘッドで半導体
チップを吸着しながら、この吸着ノズルに超音波振動を
与えて、この半導体チップを前記回路基板上に実装する
半導体実装装置において、前記超音波ヘッドに加熱部
と、この加熱部の温度を設定するものであって、別途設
けた入力装置から入力される前記回路基板の加熱温度、
この回路基板の熱膨張率および前記半導体チップの熱膨
張率により、この回路基板とこの半導体チップの熱膨張
量が略同量となるように温度設定をする加熱温度設定部
とを備えたことを特徴とするものである。
According to a third aspect of the present invention, there is provided a semiconductor mounting apparatus for connecting an ultrasonic flip chip, which heats a circuit board on which a semiconductor chip is mounted and suctions the semiconductor chip with an ultrasonic head having a suction nozzle. In a semiconductor mounting device that applies vibration and mounts the semiconductor chip on the circuit board, a heating unit and a temperature of the heating unit are set on the ultrasonic head, and an input is provided from an input device provided separately. Heating temperature of the circuit board,
A heating temperature setting unit for setting the temperature so that the thermal expansion of the circuit board becomes substantially equal to the thermal expansion of the semiconductor chip based on the coefficient of thermal expansion of the circuit board and the coefficient of thermal expansion of the semiconductor chip. It is a feature.

【0011】請求項1または請求項2の発明によれば、
回路基板と半導体チップとをそれぞれの熱膨張率に応じ
た温度に加熱して接合することで接合時の熱膨張量を略
同じになるようにしたので常温復帰時に回路基板と半導
体チップとで略同量の収縮を得るように設定することが
できるから常温時における接合部の歪みが少ない接続信
頼性の高いフリップチップ実装が可能となる。
According to the first or second aspect of the present invention,
The circuit board and the semiconductor chip were heated to a temperature corresponding to their respective coefficients of thermal expansion and joined so that the amounts of thermal expansion at the time of joining were substantially the same. Since the same amount of shrinkage can be set, flip-chip mounting with low connection distortion at room temperature and high connection reliability is possible.

【0012】請求項3の発明によれば、回路基板の加熱
温度と回路基板の熱膨張率および半導体チップの熱膨張
率を入力することで回路基板と半導体チップの熱膨張量
が略等しくなるように自動的に半導体チップの温度が設
定されるので、請求項2の発明になる超音波フリップチ
ップ接続方法を実行するにあたり面倒な計算が不要にな
り間違いも防ぐことができる。
According to the third aspect of the present invention, by inputting the heating temperature of the circuit board, the coefficient of thermal expansion of the circuit board, and the coefficient of thermal expansion of the semiconductor chip, the amounts of thermal expansion of the circuit board and the semiconductor chip become substantially equal. Since the temperature of the semiconductor chip is automatically set at the time of execution, complicated calculations are not required when the ultrasonic flip chip connecting method according to the second aspect of the present invention is executed, and errors can be prevented.

【0013】[0013]

【発明の実施の形態】以下、本発明の一実施形態を図面
に基づいて説明する。図1は、本発明の一実施の形態で
ある超音波フリップチップ接続用半導体実装装置の模式
図である。図1において、1は半導体チップ、2は半導
体チップ1の電極に形成した金バンプ、3は半導体チッ
プ1を実装する回路基板、4は回路基板3に形成したパ
ッド、5は吸着ノズル5a、加熱部5bおよび超音波振
動伝達部5cを備えた超音波ヘッド、6は回路基板3を
載置すると共に回路基板3を所定温度に加熱するホット
プレート、7は吸着ノズル5aに超音波振動を加える超
音波振動源である超音波発生部、8は超音波ヘッド5に
備えられた加熱部5bの温度制御を行なうとともにホッ
トプレート6を所定の温度に制御する加熱温度設定部で
ある。
DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic view of an ultrasonic flip-chip connecting semiconductor mounting device according to an embodiment of the present invention. In FIG. 1, 1 is a semiconductor chip, 2 is a gold bump formed on an electrode of the semiconductor chip 1, 3 is a circuit board on which the semiconductor chip 1 is mounted, 4 is a pad formed on the circuit board 3, 5 is a suction nozzle 5a, An ultrasonic head having a unit 5b and an ultrasonic vibration transmitting unit 5c; 6, a hot plate for mounting the circuit board 3 and heating the circuit board 3 to a predetermined temperature; An ultrasonic generator 8 serving as an ultrasonic vibration source is a heating temperature setting unit that controls the temperature of the heating unit 5b provided in the ultrasonic head 5 and controls the hot plate 6 at a predetermined temperature.

【0014】ここで、半導体チップ1の電極上に形成す
る金バンプ2は、めっきによるバンプでもワイヤボンダ
によるバンプでもよい。また、回路基板3に形成したパ
ッド4の表面には金めっきを施すことが必要である。半
導体チップ1を保持する吸着ノズル5aは、超音波発生
部7から超音波振動伝達部5cを経由して超音波振動す
る構造となっている。また、超音波ヘッド5には加熱部
5bが設けられているが、超音波振動に悪影響を与えな
いような取付方法と質量を備えた構造となっている。例
えば、ペルチェ素子を超音波振動伝達部5cと吸着ノズ
ル5aの中間に耐熱性接着剤で固定する方法を用いるこ
とができる。ここで、加熱方式は単純な常時加熱方式で
もパルスヒート方式でもかまわない。
Here, the gold bump 2 formed on the electrode of the semiconductor chip 1 may be a bump formed by plating or a bump formed by a wire bonder. Further, it is necessary to apply gold plating to the surface of the pad 4 formed on the circuit board 3. The suction nozzle 5a that holds the semiconductor chip 1 has a structure that performs ultrasonic vibration from the ultrasonic generator 7 via the ultrasonic vibration transmitter 5c. Although the heating section 5b is provided in the ultrasonic head 5, it has a structure having a mounting method and a mass that do not adversely affect the ultrasonic vibration. For example, a method of fixing the Peltier element between the ultrasonic vibration transmitting unit 5c and the suction nozzle 5a with a heat-resistant adhesive can be used. Here, the heating method may be a simple constant heating method or a pulse heating method.

【0015】次に、本発明になる超音波フリップチップ
接続の動作について説明する。最初に、図示しない別途
設けた入力装置から加熱温度設定部8に対し、回路基板
3の熱膨張率α2と回路基板3の加熱温度t2および半導
体チップ1の熱膨張率α1を入力する。続いて、回路基
板3をホットプレート6に載置し、加熱温度設定部8か
らの設定のもとホットプレート6を加熱し、回路基板3
を加熱する。続いて、吸着ノズル5aで半導体チップ1
を吸着保持し、回路基板3の半導体チップ実装位置に位
置合わせして載置する。
Next, the operation of the ultrasonic flip chip connection according to the present invention will be described. First, with respect to the heating temperature setting unit 8 from the input device separately provided (not shown), and inputs the thermal expansion coefficient alpha 1 of the heating temperature t 2 and the semiconductor chip 1 in thermal expansion coefficient alpha 2 and the circuit board 3 of the circuit board 3 . Subsequently, the circuit board 3 is placed on the hot plate 6, and the hot plate 6 is heated under the setting from the heating temperature setting unit 8.
Heat. Subsequently, the semiconductor chip 1 is sucked by the suction nozzle 5a.
Is held by suction, and is positioned and mounted on the semiconductor chip mounting position of the circuit board 3.

【0016】その後、加熱温度設定部8からの設定のも
とに超音波ヘッド5に備えた加熱部5bを所定温度に加
熱し、超音波発生部7で超音波を発生させ、超音波振動
伝達部5cを介して吸着ノズル5aに超音波を伝達し、
吸着ノズル5aに超音波振動を与えて吸着保持されてい
る半導体チップ1を振動させることにより、金バンプ2
とパッド4間を摩擦させ、この摩擦熱により半導体チッ
プ1を回路基板3に超音波接合する。
Thereafter, the heating unit 5b provided in the ultrasonic head 5 is heated to a predetermined temperature under the setting of the heating temperature setting unit 8, and the ultrasonic wave is generated by the ultrasonic wave generating unit 7, and the ultrasonic vibration is transmitted. The ultrasonic wave is transmitted to the suction nozzle 5a via the portion 5c,
By applying ultrasonic vibration to the suction nozzle 5a to vibrate the semiconductor chip 1 held by suction, the gold bump 2
The semiconductor chip 1 is ultrasonically bonded to the circuit board 3 by the frictional heat.

【0017】この時の超音波ヘッド5に備えた加熱部5
bの温度は、回路基板3の熱膨張量と半導体チップ1の
熱膨張量が等しくなるように、下記式(1)が成立する
1を求めることにより設定する。 (t1―t0)α1=(t2―t0)α2 ………(1) ここで、t0は常温、t1は半導体チップ加熱温度、t2
は回路基板加熱温度、α1は半導体チップ熱膨張率、α2
は回路基板熱膨張率を示す。
At this time, the heating unit 5 provided in the ultrasonic head 5
temperature b is set by obtaining the t 1 of the thermal expansion amount of the circuit board 3 and the thermal expansion of the semiconductor chip 1 is to be equal, the following equation (1) is satisfied. (T 1 −t 0 ) α 1 = (t 2 −t 0 ) α 2 (1) where t 0 is room temperature, t 1 is a semiconductor chip heating temperature, and t 2
Is the circuit board heating temperature, α 1 is the coefficient of thermal expansion of the semiconductor chip, α 2
Indicates the coefficient of thermal expansion of the circuit board.

【0018】以下、具体的な数値をあてはめて説明す
る。「発明が解決しようとする課題」で述べた例と同じ
条件、すなわち回路基板3として熱膨張率α2=7pp
m/℃のセラミック基板を使用したとき、室温25℃に
おいてホットプレート6を150℃に設定して回路基板
3の加熱温度t2を150℃とした場合、熱膨張率α1
3ppm/℃の半導体チップ1の加熱温度t1は式
(1)から316℃となる。吸着ノズル5aをこの温度
に加熱して、半導体チップ1を回路基板3に接合するこ
とにより、接合完了後25℃の室温に戻った時、半導体
チップ1は回路基板3と同様に加熱状態から約13μm
収縮するので回路基板3と半導体チップ1間に応力の少
ない接合が可能となる。
In the following, description will be made by applying specific numerical values. The same conditions as in the example described in “Problems to be Solved by the Invention”, that is, the thermal expansion coefficient α 2 = 7 pp for the circuit board 3
When a ceramic substrate of m / ° C. is used, when the hot plate 6 is set to 150 ° C. at a room temperature of 25 ° C. and the heating temperature t 2 of the circuit board 3 is set to 150 ° C., the coefficient of thermal expansion α 1 =
The heating temperature t 1 of the semiconductor chip 1 of 3 ppm / ° C. is 316 ° C. from the equation (1). By heating the suction nozzle 5a to this temperature and joining the semiconductor chip 1 to the circuit board 3, when the temperature of the semiconductor chip 1 is returned to room temperature of 25 ° C. after the completion of the joining, the semiconductor chip 1 is moved from the heating state similarly to the circuit board 3. 13 μm
Because of contraction, bonding with less stress between the circuit board 3 and the semiconductor chip 1 becomes possible.

【0019】熱膨張率7ppm/℃のセラミック基板を
例に採って説明したが、熱膨張率が異なるガラス基板や
樹脂基板においても、式(1)により常温への冷却後に
最も応力が少なくなるように超音波接合時の半導体チッ
プ加熱温度を設定することができる。ただし、半導体チ
ップ加熱温度計算結果が半導体チップの耐熱限界を超え
る場合には、半導体チップの耐熱限界に温度設定するこ
とで可能な限り歪みが少なくなるようにする必要があ
る。
Although a ceramic substrate having a coefficient of thermal expansion of 7 ppm / ° C. has been described by way of example, even a glass substrate or a resin substrate having a different coefficient of thermal expansion has the lowest stress after cooling to room temperature according to equation (1). The semiconductor chip heating temperature at the time of ultrasonic bonding can be set. However, if the semiconductor chip heating temperature calculation result exceeds the heat resistance limit of the semiconductor chip, it is necessary to set the temperature at the heat resistance limit of the semiconductor chip so that the distortion is reduced as much as possible.

【0020】[0020]

【発明の効果】本発明によれば、半導体チップを実装す
る回路基板を加熱すると共に半導体チップを吸着ノズル
を備える超音波ヘッドで吸着しながら、この吸着ノズル
に超音波振動を与えて、この半導体チップを前記回路基
板上に実装する半導体実装装置において、前記超音波ヘ
ッドに加熱部を備え、この加熱部で前記半導体チップを
前記回路基板の熱膨張量と略同量の熱膨張量となるよう
に加熱した状態で超音波振動を与えて半導体チップを回
路基板に接合するようにしたので接合完了後常温に復帰
したときの収縮量が略同量となり応力による歪みが少な
くなるから接続信頼性が高い超音波フリップチップ接続
用半導体実装装置および超音波フリップチップ接続方法
を提供することができる。
According to the present invention, an ultrasonic vibration is applied to the suction nozzle while heating the circuit board on which the semiconductor chip is mounted and suctioning the semiconductor chip with the ultrasonic head having the suction nozzle. In a semiconductor mounting device for mounting a chip on the circuit board, the ultrasonic head is provided with a heating unit, and the heating unit causes the semiconductor chip to have a thermal expansion amount substantially equal to a thermal expansion amount of the circuit board. The semiconductor chip is bonded to the circuit board by applying ultrasonic vibration in a heated state, so that the shrinkage when returning to room temperature after the bonding is completed is almost the same and distortion due to stress is reduced, so connection reliability is reduced. It is possible to provide a high ultrasonic flip chip connection semiconductor mounting device and an ultrasonic flip chip connection method.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態である超音波フリップチ
ップ接続用半導体実装装置の模式図である。
FIG. 1 is a schematic view of a semiconductor mounting device for ultrasonic flip-chip connection according to an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 半導体チップ 2 金バンプ 3 回路基板 4 パッド 5 超音波ヘッド 5a 吸着ノズル 5b 加熱部 5c 超音波振動伝達部 6 ホットプレート 7 超音波発生部 8 加熱温度設定部 DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Gold bump 3 Circuit board 4 Pad 5 Ultrasonic head 5a Suction nozzle 5b Heating part 5c Ultrasonic vibration transmission part 6 Hot plate 7 Ultrasonic wave generating part 8 Heating temperature setting part

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体チップを実装する回路基板を加熱
すると共に吸着ノズルを備える超音波ヘッドで半導体チ
ップを吸着しながら、この吸着ノズルに超音波振動を与
えて、この半導体チップを前記回路基板上に実装する半
導体実装装置において、 前記超音波ヘッドに加熱部を備え、 この加熱部で前記半導体チップを前記回路基板の熱膨張
量と略同量の熱膨張量となるように加熱した状態で超音
波振動を与えて半導体チップを回路基板に接合するこ
と、 を特徴とする超音波フリップチップ接続用半導体実装装
置。
An ultrasonic vibration is applied to the suction nozzle while heating the circuit board on which the semiconductor chip is mounted and adsorbing the semiconductor chip with an ultrasonic head having a suction nozzle. In the semiconductor mounting device, the ultrasonic head is provided with a heating unit, and the heating unit heats the semiconductor chip to have a thermal expansion amount substantially equal to the thermal expansion amount of the circuit board. Bonding a semiconductor chip to a circuit board by applying ultrasonic vibration; and a semiconductor mounting device for connecting an ultrasonic flip chip.
【請求項2】 半導体チップを実装する回路基板を加熱
すると共に吸着ノズルを備える超音波ヘッドで半導体チ
ップを吸着しながら、この吸着ノズルに超音波振動を与
えて、この半導体チップを前記回路基板上に実装する半
導体実装装置において、 前記超音波ヘッドに加熱部を備え、 この加熱部で前記半導体チップを前記回路基板の熱膨張
量と略同量の熱膨張量となるように加熱した状態で超音
波振動を与えて半導体チップを回路基板に接合するこ
と、 を特徴とする超音波フリップチップ接続方法。
2. An ultrasonic vibration is applied to the suction nozzle while heating the circuit board on which the semiconductor chip is mounted and adsorbing the semiconductor chip by an ultrasonic head having a suction nozzle, so that the semiconductor chip is placed on the circuit board. In the semiconductor mounting device, the ultrasonic head is provided with a heating unit, and the heating unit heats the semiconductor chip to have a thermal expansion amount substantially equal to the thermal expansion amount of the circuit board. Bonding a semiconductor chip to a circuit board by applying ultrasonic vibration.
【請求項3】 半導体チップを実装する回路基板を加熱
すると共に吸着ノズルを備える超音波ヘッドで半導体チ
ップを吸着しながら、この吸着ノズルに超音波振動を与
えて、この半導体チップを前記回路基板上に実装する半
導体実装装置において、 前記超音波ヘッドに加熱部と、 この加熱部の温度を設定するものであって、別途設けた
入力装置から入力される前記回路基板の加熱温度、この
回路基板の熱膨張率および前記半導体チップの熱膨張率
により、この回路基板とこの半導体チップの熱膨張量が
略同量となるように温度設定をする加熱温度設定部と、 を備えたことを特徴とする請求項1記載の超音波フリッ
プチップ接続用半導体実装装置。
3. An ultrasonic vibration is applied to the suction nozzle while heating the circuit board on which the semiconductor chip is mounted and adsorbing the semiconductor chip with an ultrasonic head having a suction nozzle. A heating unit for the ultrasonic head, for setting a temperature of the heating unit, wherein a heating temperature of the circuit board input from an input device provided separately; A heating temperature setting unit that sets a temperature so that the thermal expansion of the circuit board and the semiconductor chip becomes substantially the same according to the coefficient of thermal expansion and the coefficient of thermal expansion of the semiconductor chip. The semiconductor mounting device for connecting an ultrasonic flip chip according to claim 1.
JP2001051644A 2001-02-27 2001-02-27 Semiconductor mounting apparatus for ultrasonic-flip chip connection and ultrasonic-flip chip connecting method Pending JP2002252252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001051644A JP2002252252A (en) 2001-02-27 2001-02-27 Semiconductor mounting apparatus for ultrasonic-flip chip connection and ultrasonic-flip chip connecting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001051644A JP2002252252A (en) 2001-02-27 2001-02-27 Semiconductor mounting apparatus for ultrasonic-flip chip connection and ultrasonic-flip chip connecting method

Publications (1)

Publication Number Publication Date
JP2002252252A true JP2002252252A (en) 2002-09-06

Family

ID=18912391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001051644A Pending JP2002252252A (en) 2001-02-27 2001-02-27 Semiconductor mounting apparatus for ultrasonic-flip chip connection and ultrasonic-flip chip connecting method

Country Status (1)

Country Link
JP (1) JP2002252252A (en)

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