JP2002246608A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2002246608A
JP2002246608A JP2001342686A JP2001342686A JP2002246608A JP 2002246608 A JP2002246608 A JP 2002246608A JP 2001342686 A JP2001342686 A JP 2001342686A JP 2001342686 A JP2001342686 A JP 2001342686A JP 2002246608 A JP2002246608 A JP 2002246608A
Authority
JP
Japan
Prior art keywords
thin film
tft
gate
semiconductor device
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001342686A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002246608A5 (enrdf_load_stackoverflow
Inventor
Jun Koyama
潤 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001342686A priority Critical patent/JP2002246608A/ja
Publication of JP2002246608A publication Critical patent/JP2002246608A/ja
Publication of JP2002246608A5 publication Critical patent/JP2002246608A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal Display Device Control (AREA)
JP2001342686A 2000-11-09 2001-11-08 半導体装置 Withdrawn JP2002246608A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001342686A JP2002246608A (ja) 2000-11-09 2001-11-08 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-342016 2000-11-09
JP2000342016 2000-11-09
JP2001342686A JP2002246608A (ja) 2000-11-09 2001-11-08 半導体装置

Publications (2)

Publication Number Publication Date
JP2002246608A true JP2002246608A (ja) 2002-08-30
JP2002246608A5 JP2002246608A5 (enrdf_load_stackoverflow) 2005-06-30

Family

ID=26603660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001342686A Withdrawn JP2002246608A (ja) 2000-11-09 2001-11-08 半導体装置

Country Status (1)

Country Link
JP (1) JP2002246608A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005055722A (ja) * 2003-08-06 2005-03-03 Nec Corp 表示駆動回路及びそれを用いた表示装置
JP2005065243A (ja) * 2003-07-30 2005-03-10 Semiconductor Energy Lab Co Ltd ソースフォロワを有する回路および半導体装置
JP2005115362A (ja) * 2003-09-19 2005-04-28 Semiconductor Energy Lab Co Ltd 表示装置及び表示装置の作製方法
WO2006041035A1 (ja) * 2004-10-13 2006-04-20 Rohm Co., Ltd 有機el駆動回路および有機el表示装置
JP2006140843A (ja) * 2004-11-12 2006-06-01 Sharp Corp 演算増幅器の駆動装置、それを備えた表示装置および電子機器、並びに演算増幅器の駆動方法
US7482179B2 (en) 2002-10-21 2009-01-27 Samsung Sdi Co., Ltd. Method of fabricating a thin film transistor using dual or multiple gates
US7522159B2 (en) 2002-11-08 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display appliance
WO2010082449A1 (en) * 2009-01-16 2010-07-22 Semiconductor Energy Laboratory Co., Ltd. Regulator circuit and rfid tag including the same
US8044574B2 (en) 2003-09-19 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
WO2024018888A1 (ja) * 2022-07-20 2024-01-25 学校法人立命館 信号生成回路

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7482179B2 (en) 2002-10-21 2009-01-27 Samsung Sdi Co., Ltd. Method of fabricating a thin film transistor using dual or multiple gates
US7522159B2 (en) 2002-11-08 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display appliance
JP2005065243A (ja) * 2003-07-30 2005-03-10 Semiconductor Energy Lab Co Ltd ソースフォロワを有する回路および半導体装置
JP2005055722A (ja) * 2003-08-06 2005-03-03 Nec Corp 表示駆動回路及びそれを用いた表示装置
JP2005115362A (ja) * 2003-09-19 2005-04-28 Semiconductor Energy Lab Co Ltd 表示装置及び表示装置の作製方法
US8362693B2 (en) 2003-09-19 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
US8044574B2 (en) 2003-09-19 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
JP5103017B2 (ja) * 2004-10-13 2012-12-19 ローム株式会社 有機el駆動回路および有機el表示装置
WO2006041035A1 (ja) * 2004-10-13 2006-04-20 Rohm Co., Ltd 有機el駆動回路および有機el表示装置
JPWO2006041035A1 (ja) * 2004-10-13 2008-05-15 ローム株式会社 有機el駆動回路および有機el表示装置
KR100872921B1 (ko) * 2004-10-13 2008-12-08 로무 가부시키가이샤 유기 el 구동 회로 및 유기 el 표시 장치
US7876297B2 (en) 2004-10-13 2011-01-25 Rohm Co., Ltd. Organic EL drive circuit with a D/A converter circuit and organic EL display device using the same
JP2006140843A (ja) * 2004-11-12 2006-06-01 Sharp Corp 演算増幅器の駆動装置、それを備えた表示装置および電子機器、並びに演算増幅器の駆動方法
CN102282523A (zh) * 2009-01-16 2011-12-14 株式会社半导体能源研究所 调节器电路以及包含调节器电路的rfid标签
WO2010082449A1 (en) * 2009-01-16 2010-07-22 Semiconductor Energy Laboratory Co., Ltd. Regulator circuit and rfid tag including the same
US8587286B2 (en) 2009-01-16 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Regulator circuit and RFID tag including the same in wireless communication to improve noise margin
US9092042B2 (en) 2009-01-16 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Regulator circuit and RFID tag including the same
WO2024018888A1 (ja) * 2022-07-20 2024-01-25 学校法人立命館 信号生成回路

Similar Documents

Publication Publication Date Title
US9099362B2 (en) Semiconductor device
US7791610B2 (en) Display device and display system using the same
US7602385B2 (en) Display device and display system using the same
JP5593424B2 (ja) 液晶表示装置
US8558241B2 (en) Semiconductor device and fabrication method thereof
US20050269639A1 (en) Method for manufacturing an electrooptical device
US20080251845A1 (en) Semiconductor Device and Manufacturing Method Thereof
JP2002246608A (ja) 半導体装置
JP5046439B2 (ja) 半導体装置の作製方法
JP2001210832A (ja) 半導体装置及びその作製方法
JP4986332B2 (ja) 半導体装置の作製方法
JP5244274B2 (ja) 半導体装置の作製方法
JP3993630B2 (ja) 半導体装置の作製方法
JP4850328B2 (ja) 半導体装置の作製方法
JP2001326178A (ja) 半導体装置及びその作製方法
JP2012109579A (ja) 半導体装置及びその作製方法
JP2003248469A (ja) 表示装置及びこれを用いた表示システム
JP2002196701A (ja) 表示装置の駆動回路及び表示装置の駆動方法
JP3934538B2 (ja) 半導体装置の作製方法
JP3934537B2 (ja) 半導体装置
JP3880919B2 (ja) 液晶表示装置
JP2001274405A (ja) 半導体装置およびその作製方法
JP2004186215A6 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041025

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041025

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20061228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080610

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20080623