JP2002244154A - Electro-optical device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase the light resistance in an electro-optic device, such as a liquid crystal device and to display high-quality images. SOLUTION: The electro-optic device has pixel electrodes (9a), TFTs (30) connected to the pixels, lines (3a, 3b) connected to the TFTs, upper light- shielding layers (300, 6a) for covering at least the channel region of the TFTs from the upper side, and lower light-shielding layers (11a) for covering at least the channel region of the TFTs from the lower side, with elements being disposed on the TFT array substrate (10). The substrate is carved to form grooves (10CV) in a lattice or stripe state, in the region facing the lines and further carved to form a recessed part (401), in the region facing to the channel region in the above groove. The lower light-shielding film is formed in the recessed part.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention belongs to the technical field of an electro-optical device of an active matrix driving system and an electronic apparatus having the same, and in particular, a thin film transistor for pixel switching (hereinafter referred to as TFT as appropriate). In a laminated structure on a substrate, and a technical field of an electronic apparatus having the same.

[0002]

2. Description of the Related Art In an electro-optical device of a TFT active matrix drive type, when incident light is applied to a channel region of a pixel switching TFT provided in each pixel, light leakage current is generated by excitation by light, and characteristics of the TFT are increased. Changes. In particular, in the case of an electro-optical device for a light valve of a projector, since the intensity of incident light is high, it is important to shield the TFT channel region and its peripheral region from incident light.

Therefore, conventionally, the channel region is formed by a light-shielding film that defines an opening region of each pixel provided on the opposite substrate or by a data line that passes over the TFT and is made of a metal film such as Al (aluminum). And its surrounding area are shielded from light. Further, a light-shielding film made of, for example, a refractory metal may be provided on the TFT array substrate at a position facing the pixel switching TFT, that is, below the TFT. If a light-shielding film is provided below the TFT as described above, the reflected light from the back side of the TFT array substrate or a combination of a plurality of electro-optical devices via a prism or the like constitutes another optical system. Return light, such as projection light, which passes through a prism or the like from the electro-optical device described above, can be prevented from entering the TFT of the electro-optical device.

On the other hand, to prevent flicker in a displayed image,
From the viewpoint of preventing the deterioration of the liquid crystal due to the application of DC voltage,
For example, a scanning line inversion driving method in which the polarity of the liquid crystal driving voltage is inverted for each scanning line, a data line inversion driving method in which the potential polarity of the liquid crystal driving voltage is inverted for each data line, and the potential polarity of the liquid crystal driving voltage is inverted for each dot An inversion driving method such as a dot inversion driving method has been developed.

[0005]

However, the above-described various light-shielding techniques have the following problems.

That is, according to the technique of forming a light-shielding film on a counter substrate or a TFT array substrate, the space between the light-shielding film and the channel region is three-dimensionally viewed, for example, as a liquid crystal layer, an electrode, or an interlayer insulating film. And so on, so that the light obliquely incident between them is not sufficiently shielded. In particular, in a small electro-optical device used as a light valve of a projector, the incident light is a light beam obtained by focusing light from a light source with a lens, and a component obliquely incident cannot be ignored (for example, a light perpendicular to a substrate). (About 10% of a component tilted by about 10 to 15 degrees from a certain direction), and it is a practical problem that such oblique incident light is not sufficiently shielded.

Further, light entering the electro-optical device from a region having no light-shielding film is exposed to the upper surface of the substrate or the upper surface of the light-shielding film formed on the upper surface of the substrate or the lower surface of the data line, that is, the side facing the channel region. After being reflected on the inner surface, the reflected light or the multiple reflected light reflected on the upper surface of the substrate or the inner surface of the light-shielding film or the data line may eventually reach the channel region of the TFT.

In particular, as the electro-optical device has been improved in definition or the pixel pitch has been reduced in order to meet the general demand for higher quality display images in recent years, the light intensity of incident light has been increased in order to display brighter images. According to the conventional various light-shielding technologies described above, it becomes more difficult to perform sufficient light-shielding, and flicker occurs due to a change in the transistor characteristics of the TFT, thereby deteriorating the quality of a displayed image. There is a problem that it is.

In addition, as these various built-in light-shielding films and the like, storage capacitors, various wirings, and the like are formed on the TFT array substrate, the laminated structure on the TFT array substrate becomes complicated and enlarged, and the A step becomes more prominent on the ground under the electrode. And such a step,
There is a problem in that an operation failure of the electro-optical material such as an alignment failure of liquid crystal is caused, a contrast ratio is reduced and light leakage is caused, and finally the quality of a displayed image is also reduced.

On the other hand, according to the various inversion driving methods described above, a horizontal electric field is generated between adjacent pixel electrodes driven with different potential polarities. On the other hand, according to the research by the present applicant, it is possible to reduce the adverse effect of the lateral electric field by providing a convex portion having a predetermined pattern on the lower ground of the pixel electrode. It is very convenient if a convex portion having a predetermined pattern can be formed by a simple configuration or a simple manufacturing process. Conversely, if such a convex portion having a predetermined pattern cannot be formed, in the case of employing the inversion driving method, the quality of the displayed image will eventually deteriorate due to the adverse effect of the horizontal electric field to a greater or lesser extent. There is a problem.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide an electro-optical device which is excellent in light resistance and capable of displaying a bright and high-quality image. To provide an electro-optical device capable of reducing operation failure of an optical material and capable of displaying a high-quality image, and capable of forming a convex portion having a desired pattern on the ground under a pixel electrode, thereby enabling a high-quality image display. It is an object to provide a simple electro-optical device, and to provide an electronic apparatus including such an electro-optical device.

[0012]

According to a first aspect of the present invention, there is provided a first electro-optical device, comprising: a pixel electrode on a substrate; a thin film transistor connected to the pixel electrode; and a thin film transistor connected to the thin film transistor. A wiring, an upper light-shielding film disposed above the thin film transistor and covering at least a channel region of the thin film transistor from above, and a lower light shielding film disposed below the thin film transistor and covering at least the channel region of the thin film transistor from below. A light shielding film, a first groove is dug in the substrate in a region facing the wiring and the thin film transistor, and the substrate further faces the channel region in the first groove. A second groove is dug in a region to be formed, and the lower light-shielding film is formed in the second groove.

According to the first electro-optical device of the present invention, the pixel electrode is switched by the thin film transistor connected thereto, so that the driving by the active matrix driving method can be performed. Since at least the channel region of the thin film transistor is covered with the upper light-shielding film from above, light-shielding of incident light from a direction perpendicular to the substrate can be sufficiently enhanced by the upper light-shielding film. Further, since at least the channel region of the thin film transistor is covered with a lower light-shielding film from below, the reflected light on the back surface of the substrate and other electro-optical devices in a multi-plate type projector using a plurality of electro-optical devices as light valves. Shielding of return light such as light emitted from the device and penetrating through the combining optical system can be sufficiently enhanced by the lower light-shielding film. Here, the incident light and the return light include a component that enters the substrate in an oblique direction (hereinafter, referred to as oblique light). Further, the oblique light is reflected by the upper surface of the lower light-shielding film and the lower surface of the upper light-shielding film on the substrate, that is, the inner surface on the side facing the thin film transistor, so that oblique internal reflected light is generated in the electro-optical device. Is done. Furthermore, such oblique internal reflected light is reflected at another interface in the electro-optical device, and oblique multiple reflected light is generated.

However, in the first electro-optical device of the present invention,
For example, a wiring and a thin film transistor are at least partially buried in a first groove dug in the substrate in a stripe shape, a lattice shape, or the like via an interlayer insulating film or the like.
A channel region of the thin film transistor is at least partially buried in the second groove further dug in the first groove via an interlayer insulating film or the like. Since the lower light-shielding film is formed in the second groove, the channel region is surrounded by the lower light-shielding film from below.
For example, if the second groove is sufficiently deep, the channel region can be embedded in the second groove covered with the lower light-shielding film. Therefore, depending on the degree of surrounding from the lower side by the lower light shielding film in the second groove, the above-described oblique return light, oblique internal reflection light and multiple reflection light mainly on the substrate near the channel region. Light can be shielded from the lower side to the upper side, and components of such oblique light that finally reach the channel region can be reduced. As a result, a high-quality image can be displayed by a thin film transistor having favorable transistor characteristics, which is advantageous particularly when a bright image is displayed using incident light of high light intensity.

In addition, according to the first electro-optical device of the present invention, for example, the wiring and the wiring are formed via the interlayer insulating film in the first groove dug in the substrate in the form of stripes, lattices, etc. along the wiring. Since the thin film transistor is provided, it is possible to reduce a step on the ground below the pixel electrode in accordance with the presence of the wiring and the thin film transistor. As a result,
Malfunction of the electro-optical material such as poor alignment of liquid crystal due to the step can be reduced, and a high-quality image can be displayed.

In the first electro-optical device according to the present invention, a part of the wiring may also serve as the upper light shielding film.

In one embodiment of the first electro-optical device of the present invention,
The side wall of the second groove is tapered.

According to this aspect, for example, from 45 degrees to 80 degrees
The lower light-shielding film formed in the second groove having a degree of taper makes it possible to satisfactorily shield the oblique light in the channel region located above the light-shielding film over a wide range.

In this aspect, the lower light-shielding film is formed at least on a bottom surface and a side wall of the second groove, and an edge of the lower light-shielding film is at least partially provided on the substrate. You may comprise so that it may correspond to the edge part of two grooves.

According to this structure, the lower light-shielding film formed on the bottom surface and the side wall of the second groove can effectively shield light in the channel region over a wide range. In addition, at the edge of the lower light-shielding film that coincides with the edge of the second groove, incident light including oblique light from above is reflected on the upper surface of the lower light-shielding film portion outside the second groove, and The situation of invading the space above the two grooves can be prevented. That is, the light shielding performance for the channel region can be improved.

In another aspect of the first electro-optical device of the present invention, the planar shape of the lower light-shielding film is slightly smaller than the planar shape of the upper light-shielding film.

According to this aspect, it is possible to prevent a situation where oblique light passing through the side of the upper light-shielding film and entering from above is reflected on the upper surface of the lower light-shielding film and enters the space above the second groove. That is, the light shielding performance for the channel region can be improved.

In another aspect of the first electro-optical device of the present invention, the wiring includes one wiring made of a light guide film and another wiring made of a light shielding film, and the second groove is formed in the channel region. In addition to the region facing the one wiring, the region facing the one wiring is also dug.

According to this aspect, since one wiring is formed of a light guide film such as a polysilicon film, for example, if oblique light is incident on any part of the one wiring, the light is guided by one wiring. To the channel region. However, the second groove is dug in a stripe shape, for example, following the one wiring in the region facing the one wiring in addition to the region facing the channel region. For this reason, by surrounding one wiring made of the light guide film from below with the lower light-shielding film formed in the second film, the possibility of oblique light entering the one wiring can be reduced.

In another aspect of the first electro-optical device of the present invention, the wiring includes a gate electrode of the thin film transistor and a scanning line formed wide at the gate electrode, and the second groove has , Are dug in the region facing the scanning line in addition to the region facing the channel region.

According to this aspect, since the wiring includes the scanning line including the gate electrode, for example, when the scanning line is formed from a polysilicon film or the like suitable for the gate electrode, the oblique light is applied to any part of the scanning line. May be guided by the scanning line and reach the channel region facing the gate electrode. However, the second groove is also dug in a region facing the scanning line, and is dug so as to have a planar shape corresponding to the scanning line formed wide at the gate electrode portion. For this reason, by surrounding the scanning line including the gate electrode portion from below with the lower light-shielding film formed in the second film, oblique light enters the scanning line,
The possibility of reaching the gate electrode can be reduced.

As described above, in order to improve the light-shielding performance against oblique light from below in one wiring or scan line made of a light-guiding film, the area for forming the lower light-shielding film may be expanded. However, if the area for forming the lower light-shielding film is simply enlarged, it is fundamentally difficult to increase the aperture ratio of each pixel in order to improve the brightness of the displayed image. Occurs. In addition, considering that the lower light-shielding film causes internal reflection and multiple reflection light due to oblique light, it is necessary to expand the area in which the lower light-shielding film is formed. There is also a difficult problem to be solved that causes an increase in reflected light. Therefore, the above-described embodiment of the first electro-optical device of the present invention is very advantageous.

In another aspect of the first electro-optical device of the present invention, the second groove is dug not only in the channel region but also in a region of the semiconductor layer opposed to a region adjacent to the channel region. I have.

According to this aspect, in addition to the channel region, the light shielding performance in a region opposed to a region adjacent to the channel region such as an LDD (Lightly Doped Drain) region and an offset region is also improved. Therefore, a high-quality image can be displayed by a thin film transistor having favorable transistor characteristics, which is advantageous particularly when a bright image is displayed using incident light having high light intensity.

In another aspect of the first electro-optical device according to the present invention, the lower light-shielding film is made of a film containing a high melting point metal.

According to this aspect, the lower side light-shielding layer made of a film containing a high melting point metal can satisfactorily shield light below the thin film transistor. Examples of the film containing a high melting point metal include at least one of high melting point metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), Mo (molybdenum), and Pb (lead). , A metal simple substance, an alloy, a metal silicide, a polysilicide, a laminate of these, and the like.

In another aspect of the first electro-optical device of the present invention, the device further comprises a storage capacitor connected to the pixel electrode, wherein the upper light-shielding film at least partially forms the storage line. Alternatively, it is composed of a capacitor electrode.

According to this aspect, at least a portion of the upper light-shielding film is formed of, for example, a capacitor line or a capacitor electrode formed of a film containing a high-melting-point metal, so that the laminated structure on the substrate and the manufacturing process can be simplified.

A part of the upper light-shielding film may be composed of a data line composed of, for example, an Al film, or may be composed of an intermediate conductive layer for relay-connecting the thin film transistor and the pixel electrode.

According to another aspect of the first electro-optical device of the present invention, the electro-optical device further includes an opposing substrate disposed to oppose the substrate via an electro-optical material, in place of or in addition to the upper light-shielding film. A light shielding film that covers at least the channel region from above on the counter substrate.

According to this aspect, at least the channel region of the thin film transistor is covered with another light shielding film formed on the opposing substrate in addition to or instead of the upper light shielding film from the upper side. Can be shielded from incident light from the camera.

In order to solve the above-mentioned problem, the second electro-optical device of the present invention comprises an electro-optical material sandwiched between a pair of first and second substrates, and a pixel electrode and a pixel electrode are provided on the first substrate.
A thin film transistor connected to the pixel electrode, a first wiring connected to the thin film transistor and extending in a first direction, and a second wiring connected to the thin film transistor and extending in a second direction intersecting the first direction. Wherein the substrate has a first groove dug in a region facing at least one of the first wiring and the second wiring, and the substrate further includes the first groove in the first groove. First
An island-shaped second groove is dug in a region where the wiring and the second wiring intersect.

According to the second electro-optical device of the present invention, by performing switching control of the pixel electrode by the thin film transistor connected thereto, driving by the active matrix driving method can be performed. Here, in particular, the wiring is at least partially buried through the interlayer insulating film or the like in the first groove dug in the substrate in a stripe shape, a lattice shape, or the like along the wiring. Therefore, as much as the wiring is embedded,
A step on the ground below the pixel electrode can be reduced, and an operation failure of the electro-optical material such as a liquid crystal alignment defect caused by the step can be reduced. In addition, the second groove further dug into the first groove
Wiring portions that intersect with each other via an interlayer insulating film or the like are at least partially buried in the grooves. In other words, in a region where the wirings intersect and the thicknesses of the two wirings are summed up and the step on the ground below the pixel electrode is locally very large, the groove is dug deeply in two steps. Can be reduced. Therefore. Malfunction of the electro-optical material such as poor alignment of liquid crystal due to the step can be reduced, and finally a high-quality image can be displayed.

In one embodiment of the second electro-optical device according to the present invention,
The second groove is dug in a region facing the first wiring or the second wiring in addition to a region where the first wiring and the second wiring intersect.

According to this aspect, the second groove is dug not only in the intersecting region but also in the region facing one of the first and second wirings. For example, the second groove is dug in a stripe shape or a lattice shape along the wiring as viewed in plan. On the other hand, only the first groove is dug in the region facing the other of the first and second wirings. Therefore, the height of the lower ground of the pixel electrode above the other of the first and second wirings can be higher than the height of the lower ground of the pixel electrode above one of the first and second wirings. That is, depending on the presence or absence of the groove, it is possible to form a protrusion on the lower ground of the pixel electrode above the other of the first and second wirings. As a result, for example, the adverse effect of the lateral electric field in the various inversion driving methods described above can be reduced by using such a convex portion. Moreover, such a convex portion can be formed relatively easily by the presence or absence of the first groove and the second groove in the substrate.

In another aspect of the second electro-optical device according to the present invention, the channel region of the thin-film transistor is the first electro-optical device.
The wiring is located in a region where the wiring and the second wiring intersect.

According to this aspect, the first and second wirings and the semiconductor layer constituting the channel region are overlapped,
The thickness of the stacked body on the substrate is locally increased in this region. However, since the second groove is dug in the first groove in this region, the step on the lower ground of the pixel electrode in this region can be reduced.

In another aspect of the second electro-optical device of the present invention, the device further comprises a storage capacitor connected to the pixel electrode, wherein the first wiring or the second wiring is a capacitor constituting the storage capacitor. Including lines.

According to this aspect, the first or second wiring is
For example, since it includes a capacitance line made of a film containing a high melting point metal,
The stacked structure on the substrate and the manufacturing process can be simplified.

The wiring may include, for example, a scanning line made of a polysilicon film, a data line made of an Al film, and the like.

According to a third aspect of the invention, there is provided an electro-optical device comprising: a pixel electrode on a substrate; a thin film transistor connected to the pixel electrode and laminated below the pixel electrode; And a wiring laminated below the pixel electrode,
The thin film transistor and the wiring are stacked and formed so as to partially overlap each other, and the substrate is formed on the substrate in an area where the thin film transistor and the wiring overlap with each other so that the lower ground of the pixel electrode is flattened. In a region where the wiring does not overlap with the thin film transistor in a region where the wiring is formed, a multi-step groove including a groove having a depth corresponding to the thickness of the wiring is dug. Have been.

According to the third electro-optical device of the present invention, the pixel electrode is switched by the thin film transistor connected thereto, so that it can be driven by the active matrix driving method. Here, in particular, the thin film transistor and the wiring are laminated so as to partially overlap with each other. However, in a region where the thin film transistor and the wiring overlap, a groove having a depth corresponding to the film thickness of the thin film transistor and the wiring are formed on the substrate. In a region where the wiring and the thin film transistor do not overlap in the formation region, a multi-step groove including a groove having a depth corresponding to the film thickness of the wiring is dug, whereby the lower ground of the pixel electrode is flattened. Therefore, it is possible to reduce the operation failure of the electro-optical material such as the alignment failure of the liquid crystal due to the step on the ground below the pixel electrode, and finally, it is possible to display a high-quality image.

According to a fourth aspect of the present invention, there is provided an electro-optical device, comprising: a pixel electrode on a substrate; a thin film transistor connected to the pixel electrode and laminated below the pixel electrode; And a wiring laminated below the pixel electrode,
The thin film transistor and the wiring are stacked so as to partially overlap with each other, and the thickness of the thin film transistor is formed on the substrate such that a lower ground surface of the pixel electrode has a convex portion having a predetermined planar pattern. A large number of trenches are dug in accordance with the planar layout, the film thickness of the wiring, and the planar layout.

According to the fourth electro-optical device of the present invention, by performing switching control of the pixel electrode by the thin film transistor connected thereto, it is possible to drive the pixel electrode by the active matrix driving method. Here, in particular, the thin film transistor and the wiring are laminated so as to partially overlap with each other, but a plurality of grooves are formed on the substrate according to the film thickness and the planar layout of the thin film transistor and the film thickness and the planar layout of the wiring. As a result, the ground below the pixel electrode has a convex portion having a predetermined plane pattern. That is, the convexities having a planar pattern that reduces the adverse effect of the lateral electric field in the various inversion driving methods described above can be relatively easily formed by the multi-step grooves. By digging a large number of grooves in this way, it is possible to reduce malfunctions of the electro-optical material such as poor alignment of the liquid crystal due to a step on the ground below the pixel electrode, and finally it is possible to display a high-quality image. Become.

In one embodiment of the fourth electro-optical device of the present invention,
An opposing substrate disposed opposite to the substrate via an electro-optical material, and an opposing electrode formed on the opposing substrate and opposing the pixel electrode; A plurality of pixels arranged in a plane including a first pixel electrode group for inversion driving at a period of and a second pixel electrode group for inversion driving at a second period complementary to the first period. An electrode, and the protrusion is formed in a region between adjacent pixel electrodes included in different pixel electrode groups included in a region serving as a gap between adjacent pixel electrodes in a plan view. ing.

According to this aspect, a voltage is applied to each pixel electrode by an inversion drive method such as the above-described scan line inversion drive method, data line inversion drive method, and dot inversion method. Here, since the convex portion is provided in the gap region where the horizontal electric field is generated, the edge of the pixel electrode in the region where the horizontal electric field is generated is brought closer to the counter electrode, so that the vertical electric field between the pixel electrode and the counter electrode is reduced. Can be relatively strong. As a result, poor alignment of the electro-optical material such as poor alignment of the liquid crystal, which is adversely affected by the lateral electric field, can be reduced.

According to another aspect of the invention, an electronic apparatus includes a light valve including any one of the above-described first to fourth electro-optical devices (including various aspects thereof). A light source that irradiates the light valve with projection light, and an optical system that projects the projection light emitted from the light valve.

According to the electronic apparatus of the present invention, the projection light from the light source is applied to the light valve, and the projection light emitted from the light valve is projected on the screen or the like by the optical system. At this time, since the light valve is made of the electro-optical device of the present invention described above, even if the projection high intensity is increased, the pixel electrode can be favorably formed by the thin film transistor in which the light leakage current is reduced by the excellent light shielding performance as described above. Switching can be controlled. Alternatively, light can be modulated by a light valve composed of an electro-optical device in which operation defects of the electro-optical material such as defective alignment of liquid crystal are reduced. As a result, finally, a high-quality image can be displayed.

The operation and other advantages of the present invention will become more apparent from the embodiments explained below.

[0055]

Embodiments of the present invention will be described below with reference to the drawings. In the following embodiments, the electro-optical device according to the invention is applied to a liquid crystal device.

First Embodiment First, the configuration of a pixel portion of an electro-optical device according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming an image display area of the electro-optical device.
FIG. 2 shows a T-shaped substrate on which data lines, scanning lines, pixel electrodes and the like are formed.
FIG. 3 is a plan view of a plurality of pixel groups adjacent to each other on the FT array substrate. FIG. 3 is a sectional view taken along line AA ′ of FIG. In FIG. 3, the scale of each layer and each member is different so that each layer and each member have a size that can be recognized in the drawing.

In FIG. 1, each of a plurality of pixels formed in a matrix forming an image display area of the electro-optical device according to this embodiment has a pixel electrode 9a and a TFT 30 for controlling the switching of the pixel electrode 9a. Are formed, and the data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a for each group. good. The scanning line 3 is connected to the gate of the TFT 30.
a is electrically connected to the scanning line 3a at predetermined timings in a pulsed manner with the scanning signals G1, G2,.
Are applied in this order in a line-sequential manner.
The pixel electrode 9a is electrically connected to the drain of the TFT 30, and by closing the switch of the TFT 30 as a switching element for a certain period, the data line 6 is turned off.
The image signals S1, S2,..., Sn supplied from a are written at a predetermined timing. The image signals S1, S2,..., Sn of a predetermined level written in the liquid crystal as an example of the electro-optical material via the pixel electrode 9a are connected to a counter electrode (described later) formed on a counter substrate (described later). For a fixed period of time. The liquid crystal modulates light by changing the orientation and order of the molecular assembly according to the applied voltage level, thereby enabling gray scale display. In the normally white mode, the transmittance for the incident light decreases according to the voltage applied in each pixel unit. In the normally black mode, the light enters according to the voltage applied in each pixel unit. Light transmittance is increased, and light having a contrast corresponding to an image signal is emitted from the electro-optical device as a whole. Here, in order to prevent the held image signal from leaking, a storage capacitor 70 is added in parallel with a liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode.

In FIG. 2, a plurality of transparent pixel electrodes 9 are arranged in a matrix on a TFT array substrate of an electro-optical device.
a (the outline is indicated by a dotted line portion 9a '), and the data line 6a and the scanning line 3a are provided along the vertical and horizontal boundaries of the pixel electrode 9a, respectively.

A scanning line 3a is arranged so as to face a channel region 1a 'indicated by a finely hatched region in the semiconductor layer 1a, which rises to the right in the figure, and the scanning line 3a functions as a gate electrode. Particularly, in the present embodiment, the scanning line 3
“a” is formed to be wide in a portion to be the gate electrode. In this manner, at the intersections of the scanning lines 3a and the data lines 6a, the scanning lines 3a and
A pixel switching TFT 30 is provided in which a is opposed to each other as a gate electrode.

As shown in FIG. 2 and FIG.
Are formed on the scanning lines 3a. The capacitance line 300 is
A main line portion extending in a stripe shape along the scanning line 3a when viewed in a plan view, and a protruding portion vertically protruding in FIG. 2 along the data line 6a from the main line portion at the intersection of the scanning line 3a and the data line 6 Comprising. The capacitance line 300 is made of, for example, a metal silicide film containing a high melting point metal. However, the capacitance line 300 may be configured to have a multilayer structure in which a first film made of a conductive polysilicon film or the like and a second film made of a metal silicide film containing a refractory metal are stacked. . The capacitance line 300 has a function as a fixed-potential-side capacitance electrode of the storage capacitor 70 in addition to the function of the capacitance line.
It has a function as an upper light-shielding film that shields the TFT 30 from incident light above the light 30.

On the other hand, the dielectric film 7
The relay layer 71 that is disposed to face through the storage capacitor 5 includes a storage capacitor 70.
And has a function as an intermediate conductive layer that relay-connects the pixel electrode 9a and the high-concentration drain region 1e of the TFT 30.

As described above, in the present embodiment, the storage capacitor 70
Is a relay layer 7 serving as a pixel potential side capacitance electrode connected to the high concentration drain region 1e of the TFT 30 and the pixel electrode 9a.
1 and a part of the capacitance line 300 as the fixed potential side capacitance electrode are arranged to face each other with the dielectric film 75 interposed therebetween.

The data lines 6a extending in the vertical direction in FIG. 2 and the capacitance lines 300 extending in the horizontal direction in FIG.
On the upper side of the upper TFT 30, a lattice-shaped upper light-shielding film is formed in a plan view, and defines an opening area of each pixel.

On the other hand, T on the TFT array substrate 10
Below the FT 30, a lower light-shielding film 11a is provided in a lattice shape.

The capacitance line 300 and the lower light-shielding film 11a which constitute one example of these upper light-shielding films are made of, for example, Ti,
It is made of a single metal, an alloy, a metal silicide, a polysilicide, or a laminate of any of these, including at least one of high melting point metals such as Cr, W, Ta, Mo, and Pb.

In FIG. 3, a dielectric film 75 disposed between the relay layer 71 as a capacitor electrode and the capacitor line 300 is used.
Is a relatively thin HTO having a thickness of, for example, about 5 to 200 nm.
It is composed of a film, a silicon oxide film such as an LTO film, or a silicon nitride film. From the viewpoint of increasing the storage capacitance 70, the thinner the dielectric film 75 is, the better the reliability of the film can be obtained.

As shown in FIGS. 2 and 3, the pixel electrode 9a
Is electrically connected to the high-concentration drain region 1e of the semiconductor layer 1a through the contact holes 83 and 85 by relaying the relay layer 71. If the relay layer 71 is used as a relay layer in this way, even if the interlayer distance is as long as about 2000 nm, for example, two or more of relatively small diameters can be avoided while avoiding the technical difficulty of connecting them with one contact hole. The contact holes can be satisfactorily connected by the series contact holes, and the pixel aperture ratio can be increased, which also helps to prevent penetration of the etching when the contact holes are opened.

On the other hand, the data line 6a is electrically connected to the high-concentration source region 1d of the semiconductor layer 1a made of, for example, a polysilicon film via the contact hole 81. Incidentally, the data line 6a and the high-concentration source region 1a can be connected via a relay layer.

The capacitance line 300 extends from the image display area where the pixel electrode 9a is arranged to the periphery thereof, is electrically connected to a constant potential source, and has a fixed potential. As such a constant potential source, a scanning line driving circuit (described later) for supplying a scanning signal for driving the TFT 30 to the scanning line 3a or a data line driving circuit for controlling a sampling circuit for supplying an image signal to the data line 6a. A constant potential source such as a positive power supply or a negative power supply supplied to a circuit (described later) or a constant potential supplied to the counter electrode 21 of the counter substrate 20 may be used. Further, in order to prevent the potential fluctuation of the lower light-shielding film 11a from adversely affecting the TFT 30, the capacitance line 30 is also used.
Similarly to 0, it is preferable to extend from the image display area to the periphery thereof and connect to a constant potential source.

In FIG. 2 and FIG. 3, the electro-optical device is
The device includes a transparent TFT array substrate 10 and a transparent opposing substrate 20 disposed opposite to the TFT array substrate 10. The TFT array substrate 10 is made of, for example, a quartz substrate, a glass substrate, or a silicon substrate, and the counter substrate 20 is made of, for example, a glass substrate or a quartz substrate.

Although not shown in FIG. 2, the TFT array substrate 10 has a grid-shaped groove 10cv larger than the lower light-shielding film in plan view, as shown in FIG. Wirings and elements such as the scanning lines 3a, the data lines 6a, and the TFTs 30 are buried in the grooves 10cv. As a result, the step between the region where the wiring, the element, and the like are present and the region where the wiring, the element, and the like are not present is reduced, and ultimately, image defects such as defective alignment of the liquid crystal due to the step can be reduced.

In this embodiment, in particular, an island-shaped concave portion 401 is formed on the bottom surface of the groove 10cv at a position facing the channel region 1a 'and its adjacent region. The configuration and the operation and effect of such a concave portion 401 will be described later in detail with reference to FIGS.

As shown in FIG. 3, the TFT array substrate 10
Is provided with a pixel electrode 9a, and above it,
Alignment film 16 that has been subjected to a predetermined alignment treatment such as a rubbing treatment
Is provided. The pixel electrode 9a is made of, for example, ITO (In
It is composed of a transparent conductive film such as a dium tin oxide film. The alignment film 16 is made of, for example, an organic film such as a polyimide film.

On the other hand, a counter electrode 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 on which a predetermined alignment process such as a rubbing process is performed is provided below the counter electrode 21. I have. The counter electrode 21 is made of, for example, a transparent conductive film such as an ITO film. The alignment film 22 is made of an organic film such as a polyimide film.

The space between the TFT array substrate 10 and the opposing substrate 20 having the pixel electrode 9a and the opposing electrode 21 arranged in such a manner as to face each other is provided in a space surrounded by a sealing material described later. Liquid crystal, which is an example of an electro-optical material, is sealed, and a liquid crystal layer 50 is formed. The liquid crystal layer 50 holds the alignment film 1 in a state where no electric field is applied from the pixel electrode 9a.
A predetermined orientation state is taken by 6 and 22. Liquid crystal layer 50
Is composed of, for example, a liquid crystal in which one or several kinds of nematic liquid crystals are mixed. The sealing material is used for bonding the TFT array substrate 10 and the opposing substrate 20 around them.
For example, it is an adhesive made of a photo-curing resin or a thermosetting resin, and a gap material such as glass fiber or glass beads for mixing the two substrates at a predetermined distance is mixed.

Further, under the pixel switching TFT 30, a base insulating film 12 is provided. Base insulating film 1
2 has a function of interlayer insulating the TFT 30 from the lower light-shielding film 11a, and is formed on the entire surface of the TFT array substrate 10 so that the surface of the TFT array substrate 10 can be roughened during polishing or stains remaining after cleaning. T for pixel switching
It has a function of preventing deterioration of the characteristics of the FT 30.

In FIG. 3, the pixel switching TFT
Reference numeral 30 denotes an LDD (Lightly Doped Drain) structure, and includes a scanning line 3a and a channel region 1 of a semiconductor layer 1a in which a channel is formed by an electric field from the scanning line 3a.
a ', an insulating film 2 including a gate insulating film for insulating the scanning line 3a from the semiconductor layer 1a, a low-concentration source region 1b and a low-concentration drain region 1c of the semiconductor layer 1a, a high-concentration source region 1d of the semiconductor layer 1a, and a high-concentration source region. It has a concentration drain region 1e.

On the scanning line 3a, a high concentration source region 1d
A first interlayer insulating film 41 is formed in which a contact hole 81 leading to the contact hole 81 and a contact hole 83 leading to the high concentration drain region 1e are respectively opened.

A relay layer 71 and a capacitor line 300 are formed on the first interlayer insulating film 41, and a second interlayer insulating film 42 having contact holes 81 and 85 formed thereon is formed thereon. Are formed.

The data lines 6 a are formed on the second interlayer insulating film 42, and a third interlayer insulating film 43 having a contact hole 85 leading to the relay layer 71 is formed thereon.
Are formed. The pixel electrode 9a is provided on the upper surface of the third interlayer insulating film 43 configured as described above.

Next, referring to FIGS. 4 to 6, a groove 10 which is an example of a first groove dug in the substrate 10 in this embodiment will be described.
The configuration and the light blocking function of the concave portion 401 as an example of the cv and the second groove will be described in detail. FIG. 4 is a partially enlarged perspective view showing the base insulating film 12 on the concave portion 401 and the semiconductor layer 1a disposed thereon. FIG. 5 shows the groove 10cv.
FIG. 4 is a partially enlarged perspective view showing an upper surface of a substrate 10 in which a concave portion 401 is dug. FIG. 6 shows an upper light-shielding film (capacitance line 300 and data line 6a) above and below channel region 1a 'of TFT 30 in the basic configuration of the above-described embodiment.
FIG. 9 is a schematic pseudo-sectional view two-dimensionally showing a state of light shielding by a lower light-shielding film 11a. Although the actual shapes and arrangements of the respective films and concave portions in FIG. 6 are three-dimensional and more complicated than those shown in FIG. 6, here, the channel region 1a 'is used.
The relationship between the incident light and the return light in the vicinity of light shielding is schematically shown. In FIG. 6, the channel region 1a 'and its upper and lower light shielding films are extracted from the laminated structure on the substrate 10, and the relationship between these and the incident light and the return light is shown.

FIGS. 4 and 5 and FIGS. 2 and 3 described above.
As shown in FIG. 5, in the present embodiment, an island-shaped concave portion 401 is dug in the substrate 10 at least in a region of each semiconductor layer 1a facing at least the channel region 1a '. Such a concave portion 401 is provided in a groove 10cv dug in a grid along the scanning line 3a and the data line 6a, and is located at the intersection of the scanning line 3a and the data line 6a.

According to the present embodiment, the channel region 1a '
In addition, since the low-concentration source region 1b and the low-concentration drain region 1c (see FIG. 3) adjacent thereto are covered from above by the capacitance line 300 and the data line 6a, which are upper light-shielding films, as shown in FIG. Incident light L1 including incident light L1s and oblique incident light L1i from a direction perpendicular to the substrate 10
Can be sufficiently enhanced by the capacitance line 300 and the data line 6a as the upper light-shielding film. On the other hand, the channel region 1a 'and the low-concentration source region 1b and the low-concentration drain region 1c adjacent to the channel region 1a (see FIG. 3) are covered by the lower light-shielding film 11a from below, as shown in FIG. Return light L2 such as reflected light from the back surface of the substrate 10 or light emitted from another electro-optical device in a multi-plate type projector using a plurality of electro-optical devices as light valves and penetrating through the combined optical system. The light blocking of the return light L2 perpendicular to 10 can be sufficiently enhanced by the lower light blocking film 11a.

Here, as shown in FIG. 6, the incident light L1 and the return light L2S include oblique light L1i and L2i incident on the substrate 10 from an oblique direction, respectively. For example,
The component whose incident angle deviates from vertical to about 10 to 15 degrees is 1
It contains about 0%.

Then, for the oblique incident light L1i,
In the present embodiment, by making the widths of the capacitance line 300 and the data line 6a, which are the upper light-shielding films, each slightly larger than the width of the lower light-shielding film 11a, the oblique incident light L1i passing through the upper light-shielding film becomes Lower light-shielding film 11 formed on substrate 10
The light is prevented from being reflected on the upper surface of a and reaching the channel region 1a '.

On the other hand, with respect to the oblique return light L2i, in the present embodiment, the channel region 1a is formed by forming the concave portion 401 under the lower light shielding film 11a and forming the lower light shielding film 11a in the concave portion 401. 'Is inserted into the space surrounded by the lower light-shielding film 401 via the base insulating film 12 to some extent. Thereby, even if the width is smaller than the upper light-shielding film, the lower light-shielding film 11a causes the oblique inner reflected light L3 (shown by a broken line in FIG. 6) caused by the oblique return light L2i to reach the channel region 1a. ) Can be prevented. In particular, in the present embodiment, the lower light-shielding film 11a is
01, and the edge of the lower light-shielding film 11a is configured to partially coincide with the edge of the concave portion 401 on the substrate 10 (see FIG. 6). Therefore,
The light shielding in the channel region 1a 'can be favorably performed over a wide range, and at the same time, the oblique light L1
It is possible to effectively prevent a situation in which i is reflected on the upper surface of the lower light-shielding film portion outside the concave portion 401 and enters the space above the concave portion 401.

As described above, according to the present embodiment, high light-shielding performance can be obtained with respect to the incident light L1 and the return light L2.

In addition, according to the present embodiment, the groove 10cv
Inside, the TFT 30, the scanning line 3a,
Since the data line 6a, the capacitance line 300, and the like are arranged,
Steps on the surface of the third interlayer insulating film 43 serving as the lower ground of the pixel electrode 9a according to the existence thereof can be reduced. In particular,
Since these are overlapped and the concave portion 401 is dug in a region on the substrate 10 where the thickness of the laminate is the largest, the step can be reduced extremely efficiently. As a result, defective alignment of the liquid crystal due to the step can be reduced.

From the above viewpoint, the depth of the concave portion 401 is, for example, about several hundred to several thousand nm. Such recess 401
Can be formed by etching after the grooves 10cv are formed on the substrate 10 by etching, so that the manufacturing process can be simplified. The oblique light L2i reaching the lower light-shielding film 11a formed on the side wall of the concave portion 401 is reflected in a direction deviating from the channel region 1a 'according to the formation region of the upper light-shielding film, the type of light from the light source, and the like. As shown in the recess 401
Is preferably tapered, for example, from about 45 degrees to about 80 degrees.

In the embodiment described above, a large number of conductive layers are stacked as shown in FIG.
The occurrence of a step in the region along the data line 6a and the scanning line 3a on the lower ground (ie, the surface of the third interlayer insulating film 43) indicates that the groove 10cv and the recess 4 are formed in the TFT array substrate 10.
In addition, the base insulating film 12, the first interlayer insulating film 41, and the second interlayer insulating film 4
Second, a flattening process may be performed by digging a groove in the third interlayer insulating film 43 and burying the wiring such as the data line 6a or the TFT 30 or the like, or the third interlayer insulating film 43 or the second interlayer insulating film 42. The step on the upper surface of the
lishing) process, or by polishing organic S
The flattening process may be performed by forming a flat surface using OG (Spin On Glass).

In the embodiment described above, the pixel switching TFT 30 preferably has the LDD structure as shown in FIG. 3, but does not implant impurities into the low-concentration source region 1b and the low-concentration drain region 1c. An impurity may be implanted at a high concentration using an offset structure, or using a gate electrode composed of a part of the scanning line 3a as a mask.
A self-aligned TFT that forms high-concentration source and drain regions in a self-aligned manner may be used. In the present embodiment, the gate switching TFT 30 has a single gate structure in which only one gate electrode is disposed between the high-concentration source region 1d and the high-concentration drain region 1e, but two or more gate electrodes are provided between them. It may be arranged. In this way, the TF is more than dual gate or triple gate.
When T is formed, a leak current at a junction between the channel and the source / drain region can be prevented, and a current at the time of off can be reduced.

(Second Embodiment) Next, an electro-optical device according to a second embodiment of the present invention will be described with reference to FIGS. Here, FIG. 7 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in the second embodiment. FIG.
FIG. 8 is a sectional view taken along the line BB ′ of FIG. 7. In FIG. 8, the scale of each layer and each member is different for each layer and each member in order to make the size recognizable in the drawing.
FIG. 9 is a partially enlarged perspective view showing a base insulating film on a concave portion and a semiconductor layer disposed on the base insulating film in the second embodiment. FIG. 10 is a partially enlarged perspective view showing the upper surface of a substrate in which a groove and a concave portion are dug. FIG. 11 is a schematic pseudo cross-sectional view two-dimensionally showing the state of light shielding by the upper light shielding film and the lower light shielding film above and below the channel region of the TFT in the basic configuration of the second embodiment. . FIG.
Although the actual shapes and arrangements of the films and the concave portions are three-dimensional and more complicated than those shown in FIG. It will be shown. In FIG. 11,
The channel region and its upper and lower light-shielding films are extracted from the laminated structure on the substrate, and the relationship between these and incident light and return light is shown. 7 to 11 according to the second embodiment, the same components as those in FIGS. 2 to 6 according to the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.

As shown in FIGS. 7 to 10, in the second embodiment, instead of the island-shaped concave portion 402 in the first embodiment, a stripe shape along the scanning line 3a and a wide scanning line 3a are used. The difference is that the concave portion 402 which is widened according to the formed gate electrode portion is dug in the groove 10cv. Other configurations are the same as those of the first embodiment.

Therefore, according to the second embodiment, the scanning lines 3a
The problem is that oblique light is incident on any part of the scanning line 3a and is guided by the scanning line 3a to reach the channel region 1a 'even if it is made of a light guide film such as a polysilicon film. As shown in FIG. 11, the scanning line 3a is effectively prevented by surrounding the scanning line 3a from below with the lower light shielding film 11a formed in the concave portion 402. In addition, increasing the light-shielding performance by surrounding the scanning lines 3a in this way leads to not increasing the width of the lower light-shielding film 11a, which helps to improve the aperture ratio of each pixel.

(Modifications) Various modifications are conceivable in the embodiment described above.

As a modification, a groove 10cv or a concave portion 401 or 4 formed in a region facing the scanning line 3a is used.
By making the 02 relatively shallow, a stripe-shaped convex portion along the scanning line 3a may be formed on the surface of the third interlayer insulating film 43 that is the ground below the pixel electrode 9a. Accordingly, in a case where the scanning line inversion driving method in which the polarity of the voltage applied to the pixel electrode 9a is inverted for each scanning line 3a and the driving is performed,
The adverse effect of the horizontal electric field generated between the pixel electrodes 9a adjacent to each other in the data line direction can be reduced by raising the edge of the pixel electrode 9a with the above-mentioned protrusions to strengthen the vertical electric field in a region where the horizontal electric field is generated.

Similarly, by making the groove 10cv or the concave portion 401 or 402 dug in the region opposed to the data line 6a relatively shallow, the stripe-shaped convex portion along the data line 6a is grounded below the pixel electrode 9a. May be formed on the surface of the third interlayer insulating film 43. Thus, when a data line inversion driving method in which the polarity of the voltage applied to the pixel electrode 9a is inverted for each data line 6a is employed, the adverse effect of the lateral electric field generated between the pixel electrodes 9a adjacent in the scanning line direction. Can be reduced by raising the edge of the pixel electrode 9a with the above-mentioned convex portion to strengthen the vertical electric field in a region where the horizontal electric field is generated.

Another variation is to not only dig the recess 401 or 402 in the groove 10cv, ie, dig the groove in two steps, but also dig a further recess in the recess 401 or 402, ie, dig the groove in three steps. More generally, it is also possible to dig a groove in n (n: a natural number of 2 or more) steps, and the third interlayer insulation which is the lower ground of the pixel electrode 9a by etching the substrate 10 a plurality of times. It is also possible to form a desired pattern on the surface of the film 43.

As another modification, another light-shielding film that covers at least the channel region 1a 'from above may be provided on the counter substrate 20 in place of the capacitance line 300 and the data line 6a as the upper light-shielding film. Alternatively, in addition to the capacitance line 300 and the data line 6a serving as the upper light-shielding film,
Another light-shielding film that covers at least the channel region 1a 'from above may be provided. In the latter case, it is preferable that the width of the light-shielding film on the opposing substrate 20 is slightly narrowed so as to prevent the opening area of each pixel from becoming small due to misalignment between the two substrates. Such a light-shielding film on the counter substrate 20 is effective for preventing a temperature rise of the liquid crystal layer 50, the TFT 30, and the like.

(Overall Configuration of Electro-Optical Device) The overall configuration of the electro-optical device in each embodiment configured as described above will be described with reference to FIG. 12 and FIG. FIG.
FIG. 13 is a plan view of the TFT array substrate 10 together with the components formed thereon as viewed from the counter substrate 20, and FIG. 13 is a cross-sectional view taken along the line HH ′ of FIG.

Referring to FIG. 12, a sealing material 52 is provided on the TFT array substrate 10 along the edge thereof. A film 53 is provided. In a region outside the sealing material 52, a data line driving circuit 101 for driving the data line 6a by supplying an image signal to the data line 6a at a predetermined timing and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10. A scanning line driving circuit 1 for driving a scanning line 3a by supplying a scanning signal to the scanning line 3a at a predetermined timing.
04 are provided along two sides adjacent to this one side. If the delay of the scanning signal supplied to the scanning line 3a does not matter, it goes without saying that the scanning line driving circuit 104 may be provided on only one side. In addition, the data line driving circuit 10
1 may be arranged on both sides along the side of the image display area 10a. Further, on one remaining side of the TFT array substrate 10, the scanning line driving circuits 10 provided on both sides of the image display area 10a are provided.
A plurality of wirings 105 are provided to connect the four wirings. In at least one of the corners of the counter substrate 20, a conductive material 106 for electrically connecting the TFT array substrate 10 and the counter substrate 20 is provided. Then, as shown in FIG. 13, the opposite substrate 20 having substantially the same contour as the sealing material 52 shown in FIG. 12 is fixed to the TFT array substrate 10 by the sealing material 52.

Note that, on the TFT array substrate 10, in addition to the data line driving circuit 101, the scanning line driving circuit 104, etc., a sampling circuit for applying an image signal to a plurality of data lines 6a at a predetermined timing, a plurality of Data line 6a
A precharge circuit for supplying a precharge signal of a predetermined voltage level prior to the image signal, an inspection circuit for inspecting the quality, defects, and the like of the electro-optical device during manufacturing or shipping. Good.

In the embodiment described above with reference to FIGS. 1 to 13, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, a TAB (Tape Automated bonding) substrate The driving LSI mounted thereon may be electrically and mechanically connected via an anisotropic conductive film provided on the periphery of the TFT array substrate 10. For example, TN (Twisted) is provided on each of the side of the opposite substrate 20 where the projection light is incident and the side where the emission light of the TFT array substrate 10 is emitted.
Nematic) mode, VA (Vertically Aligned) mode, PDLC (Polymer Dispersed Liquid Crystal) mode and other operation modes, and normally white mode / normally black mode. They are arranged in a predetermined direction.

Since the electro-optical device according to the above-described embodiment is applied to a projector, three electro-optical devices are used as light valves for RGB, and each light valve has a dichroic for RGB color separation. The light of each color decomposed via the mirror is respectively incident as projection light. Therefore, in each embodiment, the opposing substrate 20 is not provided with a color filter. However, an RGB color filter may be formed on the opposing substrate 20 in a predetermined area facing the pixel electrode 9a together with its protective film. In this way, the electro-optical device in each embodiment can be applied to a direct-view or reflective color electro-optical device other than the projector. Further, a micro lens may be formed on the counter substrate 20 so as to correspond to one pixel. Alternatively, it is also possible to form a color filter layer with a color resist or the like under the pixel electrode 9a facing the RGB on the TFT array substrate 10. With this configuration, a bright electro-optical device can be realized by improving the efficiency of collecting incident light. Furthermore, the counter substrate 2
A dichroic filter that creates RGB colors using light interference may be formed by depositing many interference layers having different refractive indices on the zero. According to the counter substrate with the dichroic filter, a brighter color electro-optical device can be realized.

(Embodiment of Electronic Apparatus) Next, an embodiment of a projection type color display device as an example of an electronic apparatus using the liquid crystal device described above in detail as a light valve will be described with reference to FIGS. 14 and 15. I do.

First, the circuit configuration of the projection type color display device of the present embodiment will be described with reference to the block diagram of FIG. FIG. 14 is a view showing a 3rd embodiment of the projection type color display device.
2 shows a circuit configuration of one of the light valves. Since all three light valves have basically the same configuration, only the portion related to the configuration of one circuit will be described here. However, strictly speaking, the input signals of the three light valves are different from each other (that is, each of them is driven by the signals for R, G, and B). And B
The difference is that the order of the image signals is reversed in each field or frame or the horizontal or vertical scanning direction is reversed so that the image is displayed in an inverted manner as compared with the case of using the image signal.

In FIG. 14, the projection type color display device includes a display information output source 1000, a display information processing circuit 100,
2, a driving circuit 1004, a liquid crystal device 100, a clock generation circuit 1008, and a power supply circuit 1010. The display information output source 1000 is a ROM (Read Onl
y), a memory such as a random access memory (RAM), an optical disk device, etc., a tuning circuit for tuning and outputting an image signal, and the like. Based on a clock signal from the clock generation circuit 1008, an image signal of a predetermined format is output. The display information is output to the display information processing circuit 1002. The display information processing circuit 1002 includes various known processing circuits such as an amplification / polarity inversion circuit, a phase expansion circuit, a rotation circuit, a gamma correction circuit, and a clamp circuit. Digital signals are sequentially generated from the information and output to the driving circuit 1004 together with the clock signal CLK. The drive circuit 1004 drives the liquid crystal device 100. The power supply circuit 1010 supplies a predetermined power to each of the above-described circuits. Note that the drive circuit 1004 may be mounted on the TFT array substrate included in the liquid crystal device 100, and in addition, the display information processing circuit 1002 may be mounted.

Next, with reference to FIG. 15, an overall configuration, particularly an optical configuration, of the projection type color display device of the present embodiment will be described. FIG. 15 is a schematic sectional view of the projection type color display device.

Referring to FIG. 15, a liquid crystal projector 1100 as an example of the projection type color display device according to the present embodiment.
Prepares three liquid crystal modules each including the liquid crystal device 100 in which the above-described drive circuit 1004 is mounted on a TFT array substrate, and respectively controls the RGB light valves 100R and 100R.
It is configured as a projector used as G and 100B. In the liquid crystal projector 1100, when the projection light is emitted from a lamp unit 1102 of a white light source such as a metal halide lamp, three mirrors 1106 and two dichroic mirrors 1108 are used to convert RGB light into three.
Light components R, G, and B corresponding to the primary colors are divided, and guided to light valves 100R, 100G, and 100B corresponding to the respective colors. At this time, in particular, the B light is used to prevent light loss due to a long optical path.
The light is guided through a relay lens system 1121 including a lens 123 and an output lens 1124. And the light valve 10
The light components corresponding to the three primary colors modulated by 0R, 100G, and 100B, respectively, are output to the dichroic prism 111.
After recombining the images, the image is projected as a color image on the screen 1120 via the projection lens 1114.

The present invention is not limited to the above-described embodiments, but can be appropriately modified without departing from the spirit or spirit of the invention which can be read from the claims and the entire specification. Such electro-optical devices and electronic equipment are also included in the technical scope of the present invention.

[Brief description of the drawings]

FIG. 1 is an equivalent circuit of various elements, wires, and the like provided in a plurality of pixels in a matrix forming an image display area in an electro-optical device according to a first embodiment of the present invention.

FIG. 2 is a plan view of a plurality of adjacent pixel groups of a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in the electro-optical device according to the first embodiment.

FIG. 3 is a sectional view taken along line A-A 'of FIG.

FIG. 4 is a partially enlarged perspective view showing a base insulating film on a concave portion and a semiconductor layer disposed on the base insulating film in the first embodiment.

FIG. 5 is a partially enlarged perspective view showing an upper surface of the substrate on which grooves and recesses are formed in the first embodiment.

FIG. 6 is a schematic pseudo sectional view two-dimensionally showing upper and lower light shielding films and a concave portion of a substrate in the first embodiment.

FIG. 7 is a plan view of a plurality of adjacent pixel groups of a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in the electro-optical device according to the second embodiment.

FIG. 8 is a sectional view taken along line B-B 'of FIG.

FIG. 9 is a partially enlarged perspective view showing a base insulating film on a concave portion and a semiconductor layer disposed on the base insulating film in the second embodiment.

FIG. 10 is a partially enlarged perspective view showing an upper surface of a substrate in which a groove and a concave portion are formed in the second embodiment.

FIG. 11 is a schematic pseudo-cross-sectional view two-dimensionally showing upper and lower light shielding films and a concave portion of a substrate in the second embodiment.

FIG. 12 is a plan view of the TFT array substrate in the electro-optical device according to the embodiment together with the components formed thereon as viewed from the counter substrate side.

13 is a sectional view taken along the line H-H 'of FIG.

FIG. 14 is a block diagram showing a circuit configuration relating to a light valve in a projection type color display device which is an embodiment of the electronic apparatus of the present invention.

FIG. 15 is a schematic sectional view showing a color liquid crystal projector as an example of a projection type color display device which is an embodiment of the electronic apparatus of the invention.

[Explanation of symbols]

 1a ... semiconductor layer 1a '... channel region 1b ... low concentration source region 1c ... low concentration drain region 1d ... high concentration source region 1e ... high concentration drain region 2 ... insulating film 3a ... scanning line 6a ... data line 9a ... pixel electrode 10 ... TFT array substrate 10cv Groove 11a Lower light shielding film 12 Base insulating film 16 Alignment film 20 Counter substrate 21 Counter electrode 22 Alignment film 30 TFT 50 Liquid crystal layer 70 Storage capacitor 71 Relay layer 75 ... dielectric films 81, 83, 85 ... contact holes 300 ... capacitance lines 401, 402 ... recesses

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G09F 9/30 330 G09F 9/30 330Z 338 338 349 349C H01L 29/786 H01L 29/78 612D 21/336 619B 626C F term (reference) 2H088 EA12 HA08 HA14 HA28 MA20 2H091 FA34Y FA41Z GA13 LA30 MA07 2H092 GA29 JA24 JA37 JA46 JB22 JB31 JB51 KA04 NA01 PA13 RA05 5C094 AA01 AA16 BA03 BA43 CA19 DA14 EA04 EA05 DD03 DD03 GG02 GG13 HM14 HM15 NN02 NN03 NN27 NN42 NN44 NN45 NN46 NN72 NN73

Claims (18)

[Claims] 1. A pixel electrode, a thin film transistor connected to the pixel electrode, a wiring connected to the thin film transistor, a wiring connected to the thin film transistor, and at least a channel region of the thin film transistor disposed on the substrate from above. An upper light-shielding film that covers the thin-film transistor, and a lower light-shielding film that is disposed below the thin-film transistor and covers at least the channel region of the thin-film transistor from below. A first groove is dug in a region to be formed, and a second groove is dug in a region of the substrate facing the channel region in the first groove. An electro-optical device formed in two grooves. 2. The electro-optical device according to claim 1, wherein a side wall of the second groove is tapered. 3. The light-shielding film according to claim 2, wherein
3. The lower light-shielding film is formed on a bottom surface and a side wall of the groove, and an edge of the lower light-shielding film at least partially coincides with an edge of the second groove on the substrate. 4. Electro-optical device. 4. The electro-optical device according to claim 1, wherein the planar shape of the lower light-shielding film is slightly smaller than the planar shape of the upper light-shielding film. 5. The wiring includes one wiring made of a light guide film and another wiring made of a light shielding film, and the second groove is formed on the one wiring in addition to a region facing the channel region. The electro-optical device according to any one of claims 1 to 4, wherein the electro-optical device is also dug in an opposing area. 6. The wiring includes a gate electrode of the thin film transistor, and includes a scanning line formed wide at a portion of the gate electrode, and the second groove includes a gate electrode in addition to a region facing the channel region. The electro-optical device according to any one of claims 1 to 5, wherein the electro-optical device is also dug in a region facing the scanning line. 7. The semiconductor device according to claim 1, wherein the second groove is dug in a region facing the region adjacent to the channel region in the semiconductor layer in addition to the channel region. The electro-optical device according to claim 1. 8. The electro-optical device according to claim 1, wherein the lower light-shielding film is formed of a film containing a high melting point metal. 9. The storage device according to claim 1, further comprising a storage capacitor connected to the pixel electrode, wherein the upper light-shielding film is at least partially formed of a capacitor line or a capacitor electrode constituting the storage capacitor. 9. The electro-optical device according to any one of 1 to 8. 10. The semiconductor device according to claim 1, further comprising a counter substrate disposed to face the substrate via an electro-optical material, wherein at least the channel region is formed on the counter substrate instead of or in addition to the upper light-shielding film. The electro-optical device according to any one of claims 1 to 9, further comprising another light-shielding film that covers from above. 11. An electro-optical material is sandwiched between a pair of first and second substrates, and a pixel electrode, a thin film transistor connected to the pixel electrode, and a thin film transistor connected to the thin film transistor on the first substrate. A first wiring extending in a first direction, and a second wiring connected to the thin film transistor and extending in a second direction intersecting with the first direction. A first groove is dug in a region facing at least one of the second wirings, and the substrate further has an island shape in a region where the first wiring and the second wiring intersect in the first groove. An electro-optical device, wherein the second groove is dug. 12. The semiconductor device according to claim 1, wherein the second groove is dug not only in a region where the first wiring and the second wiring intersect but also in a region facing the first wiring or the second wiring. The electro-optical device according to claim 11, wherein 13. The electro-optical device according to claim 11, wherein a channel region of the thin film transistor is located in a region where the first wiring and the second wiring intersect. 14. The storage device according to claim 11, further comprising a storage capacitor connected to the pixel electrode, wherein the first wiring or the second wiring includes a capacitance line constituting the storage capacitor. 14. The electro-optical device according to any one of items 13 to 13. 15. A pixel electrode, a thin film transistor connected to the pixel electrode and stacked below the pixel electrode, and a wiring connected to the thin film transistor and stacked below the pixel electrode on the substrate. Wherein the thin film transistor and the wiring are stacked and formed so as to partially overlap each other, and the thin film transistor and the wiring are formed on the substrate so that the ground under the pixel electrode is planarized. Include a groove having a depth corresponding to the film thickness of the two in a region where the wiring overlaps, and a groove having a depth corresponding to the film thickness of the wiring in a region where the wiring and the thin film transistor do not overlap in the wiring formation region. An electro-optical device, wherein a multi-step groove is dug. 16. A pixel electrode on a substrate, a thin film transistor connected to the pixel electrode and stacked below the pixel electrode, and a wiring connected to the thin film transistor and stacked below the pixel electrode. Wherein the thin film transistor and the wiring are stacked and formed so as to partially overlap with each other, and the substrate has a convex portion having a predetermined plane pattern on a lower ground surface of the pixel electrode. An electro-optical device, wherein a plurality of grooves are dug in accordance with the thickness and planar layout of the thin film transistor and the thickness and planar layout of the wiring. 17. The pixel according to claim 17, further comprising: a counter substrate disposed to face the substrate via an electro-optical material; and a counter electrode formed on the counter substrate and facing the pixel electrode. A planar array including, as electrodes, a first pixel electrode group for inversion driving at a first cycle and a second pixel electrode group for inversion driving at a second cycle complementary to the first cycle. A plurality of pixel electrodes, wherein the protrusions are located between adjacent pixel electrodes included in different pixel electrode groups in a region serving as a gap between the adjacent pixel electrodes in plan view. The electro-optical device according to claim 16, wherein the electro-optical device is formed in a region. 18. A light valve comprising the electro-optical device according to claim 1, a light source for irradiating the light valve with projection light, and projecting projection light emitted from the light valve. An electronic apparatus comprising: