JP2002231554A - Method of manufacturing magnetic alloy film and magnetic head - Google Patents

Method of manufacturing magnetic alloy film and magnetic head

Info

Publication number
JP2002231554A
JP2002231554A JP2001026418A JP2001026418A JP2002231554A JP 2002231554 A JP2002231554 A JP 2002231554A JP 2001026418 A JP2001026418 A JP 2001026418A JP 2001026418 A JP2001026418 A JP 2001026418A JP 2002231554 A JP2002231554 A JP 2002231554A
Authority
JP
Japan
Prior art keywords
target
magnetic
alloy film
magnetic alloy
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001026418A
Other languages
Japanese (ja)
Inventor
Hiroshi Adachi
博史 足立
Akihiro Ashida
晶弘 芦田
Shunsaku Muraoka
俊作 村岡
Hitoshi Yamanishi
斉 山西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001026418A priority Critical patent/JP2002231554A/en
Publication of JP2002231554A publication Critical patent/JP2002231554A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183Sputtering targets therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PROBLEM TO BE SOLVED: To solve the problem that, in a process of manufacturing an FeTaZnN magnetic alloy film having superior magnetic characteristics and high corrosion resistance, a composition control is very difficult in the melting manufacture of an FeTaZn sputtering target, because of a low boiling point of Zn, and residual gas in a target made by sintering deteriorates the magnetic characteristics of an obtained magnetic alloy film. SOLUTION: An FeTa target and a Zn target made by melting are electrically discharged at once to make a magnetic alloy film. Zn has an extremely low melting point, compared with Fe and Ta and hence it is difficult to make a Zn alloy sputtering target, but easy to make a high corrosion resistance FeTaZnN magnetic alloy film having uniform and superior magnetic characteristics with a very little impurity content of the residual gas, etc., by sputtering.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、優れた磁気特性を
有しつつ高耐食性を示すFeTaZnN磁性合金膜の製
造方法およびそれを用いた磁気ヘッドに関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a FeTaZnN magnetic alloy film having excellent magnetic properties and high corrosion resistance, and a magnetic head using the same.

【0002】[0002]

【従来の技術】近年、磁気記録の高密度化に対する要請
に応えるため、高飽和磁束密度を有する軟磁性合金膜が
磁気ヘッド用として開発されている。中でも特開昭62
−210607号公報(特許第2136863号)や特
開平3−20444号公報(特許第2721562号)
で開示されているように、Feを主成分としNb,Z
r,Hf,Ta,Tiなどの遷移金属とN,Cなどの非
金属元素を含む微結晶構造膜は、優れた軟磁性と高い飽
和磁束密度、熱安定性を有しており、それらの応用例も
多い。
2. Description of the Related Art In recent years, soft magnetic alloy films having a high saturation magnetic flux density have been developed for magnetic heads in order to meet the demand for higher density of magnetic recording. Above all, JP 62
-210607 (Japanese Patent No. 2136863) and JP-A-3-20444 (Japanese Patent No. 2721562).
As disclosed in US Pat.
A microcrystalline structure film containing a transition metal such as r, Hf, Ta, and Ti and a nonmetallic element such as N and C has excellent soft magnetism, high saturation magnetic flux density, and thermal stability. There are many examples.

【0003】[0003]

【発明が解決しようとする課題】しかしながら上記のよ
うな磁性合金膜は、一部の環境下における信頼性に欠け
る場合がある。すなわち結露やダストなどにより腐食性
物質が磁性合金膜上に付着することで磁性合金膜の腐食
が生じ、磁気特性を劣化させてしまうことがある。また
磁気ヘッドの製造工程においても防食の手段としてハロ
ゲンイオンなどによる洗浄液や加工水の汚染度を厳しく
管理する必要が有り、製造コストが高くなる要因でもあ
る。そこで現在はこれらの磁性合金膜にCr、Al、R
hなどの異種の元素を添加することにより磁気特性を保
持しながら耐食性を向上させる検討が行なわれている。
特にZnはそれ自身が犠牲電極となり膜中のα−Feの
腐食を防止する効果(犠牲防食)があり、わずか1〜2
原子パーセント程度の添加でも著しく耐食性を改善する
ことができる。
However, the magnetic alloy film as described above may lack reliability under some environments. That is, when the corrosive substance adheres to the magnetic alloy film due to dew condensation, dust, or the like, corrosion of the magnetic alloy film occurs, and the magnetic characteristics may be deteriorated. Also, in the manufacturing process of the magnetic head, it is necessary to strictly control the degree of contamination of the cleaning liquid or processing water by halogen ions or the like as a means of preventing corrosion, which is a factor that increases the manufacturing cost. Therefore, at present, Cr, Al, R
Studies have been made to improve the corrosion resistance while maintaining the magnetic properties by adding a different element such as h.
In particular, Zn itself becomes a sacrificial electrode and has an effect of preventing corrosion of α-Fe in the film (sacrificial corrosion prevention).
Even with the addition of about atomic percent, the corrosion resistance can be significantly improved.

【0004】ところで現在広く磁気ヘッド用として用い
られているFeTaN系の磁性合金膜は、一般的にF
e、Taを主材料にしたスパッタリングターゲットをA
r中にN2を導入した雰囲気中で反応性スパッタリング
を行うことにより容易に作製することができる。ここで
使用するスパッタリングターゲットは通常FeとTa等
を真空溶解して作製された、不純物が少なく安定した組
成のものである。しかしながらこれに数%のZnを添加
したスパッタリングターゲットを作製するとき、Znの
沸点を超えた温度での溶解となりZnが蒸気となって抜
けてしまうため組成の制御が極めて困難である。一方F
e、Ta、Znの粉末を調合し、不活性ガス中で焼結す
ることによりスパッタリングターゲットを作製すること
ができる。この場合、均一組成のスパッタリングターゲ
ットを作製することができる反面、ターゲット内の残留
ガスの影響で所望の特性を有した磁性合金膜を得ること
が困難な場合が多い。
Incidentally, FeTaN-based magnetic alloy films widely used at present for magnetic heads are generally made of F
e, a sputtering target using Ta as a main material
It can be easily manufactured by performing reactive sputtering in an atmosphere in which N2 is introduced into r. The sputtering target used here has a stable composition with few impurities, usually prepared by melting Fe and Ta in vacuum. However, when manufacturing a sputtering target to which several percent of Zn is added, Zn is dissolved at a temperature exceeding the boiling point of Zn, and Zn is vaporized and escapes, so that it is extremely difficult to control the composition. On the other hand, F
A sputtering target can be manufactured by preparing powders of e, Ta, and Zn and sintering them in an inert gas. In this case, although a sputtering target having a uniform composition can be produced, it is often difficult to obtain a magnetic alloy film having desired characteristics due to the influence of residual gas in the target.

【0005】本発明は上記課題に鑑み、磁気ヘッド材料
に好適な優れた磁気特性と耐食性を併せ持つFeTaZ
nN磁性合金膜を安定的に成膜する製造方法を提供する
ことを目的とする。
SUMMARY OF THE INVENTION In view of the above problems, the present invention provides FeTaZ having both excellent magnetic properties and corrosion resistance suitable for a magnetic head material.
An object of the present invention is to provide a manufacturing method for stably forming an nN magnetic alloy film.

【0006】[0006]

【課題を解決するための手段】本発明は上記目的を達成
するため、従来から使用されている真空溶解して作製さ
れたFeTa合金ターゲットとZn単体のターゲットを
同時放電させることにより磁性合金膜を作製する。この
とき同一のバッキングプレート上にFeTaピースとZ
nピースを貼り合わせた複合ターゲットで放電させる場
合と、FeTa合金ターゲットとZn単体ターゲットを
各々取り付けた電極を同時放電させる場合に大別され
る。前者は固定成膜、回転成膜いずれも可能であり、特
に固定成膜であれば成膜速度を高めたり、ターゲット上
のFeTaピースとZnピースの大きさや配置を工夫す
ることにより、例えばZnの濃度勾配を有したFeTa
ZnN膜を作製することもできる。一方後者の場合は回
転成膜を行うことが必須であるが、Zn単体ターゲット
電極のパワーを制御することにより容易に組成制御がで
きるという利点を持つ。ただしこの方法ではZnが熱処
理のとき、膜中に充分拡散できるよう各ターゲット電極
のパワーを制御しなければならない。また、FeTa合
金ターゲットとFeTaZn複合ターゲットを同時に用
い、パワー制御しながら回転成膜を行う方法もある。い
ずれの方法でもZnが膜中に均一に分散したFeTaZ
nN膜を安定して得ることができる。
According to the present invention, in order to achieve the above object, a magnetic alloy film is formed by simultaneously discharging a conventionally used FeTa alloy target manufactured by vacuum melting and a target of Zn alone. Make it. At this time, the FeTa piece and Z are placed on the same backing plate.
The discharge is roughly divided into a case where the discharge is performed by the composite target to which the n pieces are bonded, and a case where the electrodes provided with the FeTa alloy target and the Zn single target are simultaneously discharged. The former can be either fixed film formation or rotational film formation. In particular, in the case of fixed film formation, by increasing the film formation speed or devising the size and arrangement of the FeTa piece and Zn piece on the target, for example, Zn FeTa with concentration gradient
A ZnN film can also be manufactured. On the other hand, in the latter case, it is indispensable to perform spin film formation, but there is an advantage that the composition can be easily controlled by controlling the power of the Zn simple substance target electrode. However, in this method, the power of each target electrode must be controlled so that Zn can be sufficiently diffused into the film during the heat treatment. There is also a method in which a FeTa alloy target and a FeTaZn composite target are used at the same time, and a rotary film is formed while controlling the power. In any method, FeTaZ in which Zn is uniformly dispersed in the film
An nN film can be obtained stably.

【0007】[0007]

【発明の実施の形態】本発明の請求項1に記載の発明
は、溶解して作製したFeTa合金ターゲットとZn単
体のターゲットを同時に放電させ、Arガス中にN2ガ
スを導入した雰囲気中でスパッタリングを行うことによ
り、FeTaZnNの組成を有する磁性合金膜を成膜す
ることを特徴とする磁性合金膜の製造方法であり、沸点
がFe、Taと比較して極端に低く合金のスパッタリン
グターゲットとしては作製困難なZnであっても、均一
で且つ焼結ターゲットを使用した場合のように残留ガス
などの不純物含有量が極めて少ない、高性能、高耐食性
のFeTaZnN磁性合金膜をスパッタリングにより容
易に作製できるものである。
DETAILED DESCRIPTION OF THE INVENTION The invention according to claim 1 of the present invention is a method in which an FeTa alloy target and a Zn single target produced by melting are simultaneously discharged, and sputtering is performed in an atmosphere in which N2 gas is introduced into Ar gas. Is carried out to form a magnetic alloy film having a composition of FeTaZnN. The method for producing a magnetic alloy film has a boiling point extremely lower than that of Fe or Ta, and is used as an alloy sputtering target. Even if difficult Zn is used, a high-performance, high-corrosion-resistant FeTaZnN magnetic alloy film that is uniform and has extremely low impurity content such as residual gas as in the case of using a sintered target can be easily produced by sputtering. It is.

【0008】本発明の請求項2に記載の発明は、溶解し
て作製したFeTa合金とZn単体を各々少なくとも1
ピース同一のバッキングプレート上に分散して配置した
複合ターゲットを用いることを特徴とする請求項1記載
の磁性合金膜の製造方法であり、固定成膜、回転成膜い
ずれも可能で自由度が有り、特に固定成膜であれば成膜
速度を高めたり、ターゲット上のFeTaピースとZn
ピースの大きさや配置を工夫することにより、例えばZ
nの濃度勾配を有したFeTaZnN膜を作製すること
ができるものである。
According to a second aspect of the present invention, at least one of an FeTa alloy and a Zn simple substance produced by melting is used.
2. The method for producing a magnetic alloy film according to claim 1, wherein a composite target dispersed and arranged on the same backing plate of the pieces is used. In particular, in the case of fixed film formation, it is possible to increase the film formation speed or to make the FeTa piece and Zn on the target
By devising the size and arrangement of the pieces, for example, Z
An FeTaZnN film having a concentration gradient of n can be manufactured.

【0009】本発明の請求項3に記載の発明は、溶解し
て作製したFeTa合金ターゲットと、Zn単体または
請求項2記載の複合ターゲットを各々取り付けた電極を
同時に放電させるとともに基板を回転させながら成膜す
ることを特徴とする請求項1記載の磁性合金膜の製造方
法であり、Znを含んだターゲット電極のパワーを制御
することにより容易に組成制御ができるものである。
According to a third aspect of the present invention, an electrode provided with a FeTa alloy target manufactured by melting and a Zn target or a composite target according to the second aspect is simultaneously discharged and the substrate is rotated. The method for producing a magnetic alloy film according to claim 1, wherein the composition is easily controlled by controlling the power of a target electrode containing Zn.

【0010】本発明の請求項4に記載の発明は、請求項
1,2および3のいずれかに記載の製造方法で成膜され
た磁性合金膜を磁気コアとして用いたことを特徴とする
磁気ヘッドであり、均一で残留ガスなどの不純物含有量
が極めて少ない安定組成を有する高性能、高耐食性のF
eTaZnN磁性合金膜を用いることにより、電磁変換
特性に優れ信頼性が極めて高いものである。
According to a fourth aspect of the present invention, there is provided a magnetic device using a magnetic alloy film formed by the manufacturing method according to any one of the first, second and third aspects as a magnetic core. High-performance, high-corrosion-resistant F with a stable composition that is uniform and has a very low content of impurities such as residual gas.
By using the eTaZnN magnetic alloy film, the electromagnetic conversion characteristics are excellent and the reliability is extremely high.

【0011】以下、本発明の実施の形態について、図1
〜2を用いて説明する。
Hereinafter, an embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIGS.

【0012】(実施の形態1)図1は本実施の形態の磁
性合金膜の製造方法を説明するための斜視図で、図1に
おいて、1はFeTa合金、2は純Zn、3はパッキン
グプレート、40はFeTaZnターゲット、41はF
eTaターゲット、5は基板である、以上のように構成
された本実施の形態の磁性合金膜の製造方法について、
以下その動作について説明する。
(Embodiment 1) FIG. 1 is a perspective view for explaining a method of manufacturing a magnetic alloy film according to the present embodiment. In FIG. 1, 1 is an FeTa alloy, 2 is pure Zn, and 3 is a packing plate. , 40 are FeTaZn targets, 41 is F
An eTa target, 5 is a substrate, and the method of manufacturing the magnetic alloy film of the present embodiment configured as described above is as follows.
The operation will be described below.

【0013】図1(a)に示すように、真空溶解にて作
製したFeTa合金1を4ピースと、純Zn2を3ピー
スとを、矩形のバッキングプレート3上に交互に配置
し、FeTaZnターゲット40とした。FeTa合金
1とZn2は表面積比で約90:10とした。各ピース
の大きさや形状、配列の方法には自由度があり、基板の
大きさや位置関係、目標組成に応じて変更できるので、
本実施の形態のような形状に限定されるものではない。
As shown in FIG. 1A, four pieces of FeTa alloy 1 and three pieces of pure Zn2 prepared by vacuum melting are alternately arranged on a rectangular backing plate 3, and a FeTaZn target 40 is formed. And The surface area ratio of FeTa alloy 1 and Zn2 was about 90:10. There is a degree of freedom in the size and shape of each piece, and the method of arrangement, and it can be changed according to the size and positional relationship of the substrate, the target composition,
It is not limited to the shape as in the present embodiment.

【0014】このFeTaZnターゲット40を2枚、
通常のFeTaターゲット41を2枚準備し、カルーセ
ルタイプのRFマグネトロンスパッタ装置の4電極に各
々設置した。その様子を図1(b)に示す。
The two FeTaZn targets 40 are
Two ordinary FeTa targets 41 were prepared and placed on four electrodes of a carousel type RF magnetron sputtering apparatus, respectively. This is shown in FIG.

【0015】基板5を回転させるとFeTaZnターゲ
ット40、FeTaターゲット41を交互に通過するよ
うに設置している。各ターゲットの取付け枚数や位置は
装置の仕様、性能に依存するが、今回はZnが熱処理後
に充分拡散し、かつ成膜速度が高められる配置とした。
When the substrate 5 is rotated, it is set so as to pass through the FeTaZn target 40 and the FeTa target 41 alternately. Although the number and position of each target to be attached depend on the specifications and performance of the apparatus, this time, the Zn was diffused sufficiently after the heat treatment, and the arrangement was such that the deposition rate was increased.

【0016】そして、溶解して作製したFeTa合金と
Zn単体のターゲットを同時に放電させ、Arガス中に
N2ガスを導入した雰囲気中で非磁性セラミック基板上
に約3マイクロメートルの成膜を行った。このときFe
Taターゲット41への印加電力は2.0kWで固定
し、FeTaZnターゲット40への印加電力は1.0
kW/1.5kW/2.0kWの3種類で行った。(表
1)に本実施の形態の成膜条件を示す。
Then, the melted FeTa alloy and the target of Zn alone were simultaneously discharged, and a film having a thickness of about 3 μm was formed on the nonmagnetic ceramic substrate in an atmosphere in which N 2 gas was introduced into Ar gas. . At this time, Fe
The power applied to the Ta target 41 was fixed at 2.0 kW, and the power applied to the FeTaZn target 40 was 1.0 kW.
kW / 1.5 kW / 2.0 kW. Table 1 shows the film forming conditions of the present embodiment.

【0017】[0017]

【表1】 [Table 1]

【0018】続いてこれらの試料を540℃1時間の真
空中熱処理を施した後、1MHzの透磁率を8の字コイ
ル法で、保磁力をB−Hループトレーサで測定した。ま
た膜組成をEPMA(電子プローブ微小部分析法)によ
り求めた。その結果を、比較のため従来の溶解FeTa
ターゲット41を使用して作製したFeTaN磁性合金
膜(試料NO.1)および焼結FeTaZnターゲット
を使用して作製したFeTaZnN磁性合金膜(試料N
O.2)と併せて(表2)に示す。
Subsequently, these samples were subjected to a heat treatment in vacuum at 540 ° C. for 1 hour, and then the magnetic permeability at 1 MHz was measured by a figure 8 coil method and the coercive force was measured by a BH loop tracer. The film composition was determined by EPMA (electron probe micropart analysis). The results were compared with those of the conventional molten FeTa for comparison.
An FeTaN magnetic alloy film (sample No. 1) manufactured using the target 41 and a FeTaZnN magnetic alloy film (sample N) manufactured using the sintered FeTaZn target
O. It is shown in Table 2 together with 2).

【0019】[0019]

【表2】 [Table 2]

【0020】この表からわかるように、Zn含有量はF
eTaZnターゲット40への印加電力によって制御で
き、かつ残留ガスの影響を受けず、良好な磁気特性を持
つFeTaZnN磁性合金膜を得ることができた。
As can be seen from this table, the Zn content is F
A FeTaZnN magnetic alloy film which can be controlled by the electric power applied to the eTaZn target 40 and has good magnetic properties without being affected by the residual gas can be obtained.

【0021】またTEM(透過電子顕微鏡)による膜構
造観察を行ったところ、Znもしくはその化合物が粒界
付近に均一に分散した構造であることが確認できた。
When the film structure was observed with a TEM (transmission electron microscope), it was confirmed that Zn or its compound was uniformly dispersed near the grain boundaries.

【0022】以上のように本実施の形態によれば、磁気
ヘッド材料に好適な、優れた磁気特性と耐食性を併せ持
つFeTaZnN磁性合金膜を安定的に成膜することが
できた。
As described above, according to the present embodiment, a FeTaZnN magnetic alloy film having both excellent magnetic properties and corrosion resistance suitable for a magnetic head material can be stably formed.

【0023】(実施の形態2)(表2)に示したNo.
1、2(従来例)とNo.4(本実施例)の各磁性合金
膜を使用して図2に示すようなメタル・イン・ギャップ
型の磁気ヘッドを作製した。すなわち、各磁性合金膜6
をトラック幅規制加工後のMn−Zn単結晶フェライト
8上に成膜し、磁気ギャップ7を介してトラックを突き
合わせた後、接合ガラス9にて封着したものである。な
お、磁気ヘッドのディメンジョンはトラック幅11マイ
クロメートル、実効ギャップ長0.2マイクロメートル
である。
(Embodiment 2) No. 2 shown in (Table 2)
Nos. 1 and 2 (conventional examples) and A metal-in-gap type magnetic head as shown in FIG. 2 was manufactured using each magnetic alloy film of Example 4 (Example). That is, each magnetic alloy film 6
Is formed on the Mn—Zn single crystal ferrite 8 after the track width regulation processing, the tracks are butted via the magnetic gap 7, and then sealed with the bonding glass 9. The dimensions of the magnetic head are a track width of 11 micrometers and an effective gap length of 0.2 micrometers.

【0024】これら3種類のヘッドに対し、20MHz
におけるC/Nをドラムテスターで測定した後、2pp
mのHClを含む40℃、相対湿度80%の環境に96
時間放置し、取り出して再び同条件でヘッドのC/Nを
測定した。その結果を従来例(FeTaN)との相対比
較で(表3)に示す。
For these three types of heads, 20 MHz
After measuring C / N in the drum tester, 2pp
96 ° C in an environment of 40 ° C and 80% relative humidity containing
The head was left for a while, taken out, and the C / N of the head was measured again under the same conditions. The results are shown in Table 3 in comparison with the conventional example (FeTaN).

【0025】[0025]

【表3】 [Table 3]

【0026】この表からわかるように、従来例と比較し
て本発明の製造方法により作製したFeTaZnN磁性
合金膜を用いたメタル・イン・ギャップ型の磁気ヘッド
は良好な電磁変換特性を示し、且つ環境試験後の特性劣
化がほとんど無く、実使用環境下で優れた耐食性をもっ
ていることがわかった。
As can be seen from this table, the metal-in-gap type magnetic head using the FeTaZnN magnetic alloy film manufactured by the manufacturing method of the present invention has better electromagnetic conversion characteristics than the conventional example, and It was found that there was almost no characteristic deterioration after the environmental test, and that it had excellent corrosion resistance under the actual use environment.

【0027】[0027]

【発明の効果】以上のように本発明によれば、沸点がF
e、Taと比較して極端に低く合金のスパッタリングタ
ーゲットとしては作製困難なZnであっても、均一で且
つ焼結ターゲットを使用した場合のように残留ガスなど
の不純物が無く、優れた磁気特性を持った高耐食性のF
eTaZnN磁性合金膜をスパッタリングにより容易に
作製できる。この製造方法によって信頼性が極めて高く
電磁変換特性の優れた磁気ヘッドを安定的に得ることが
できる。
As described above, according to the present invention, the boiling point is F
e, even Zn, which is extremely low compared to Ta and difficult to produce as an alloy sputtering target, is uniform and free from impurities such as residual gas as in the case of using a sintered target, and has excellent magnetic properties. High corrosion resistance F with
An eTaZnN magnetic alloy film can be easily formed by sputtering. According to this manufacturing method, a magnetic head having extremely high reliability and excellent electromagnetic conversion characteristics can be stably obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態1による磁性合金膜の製
造方法を示す斜視図
FIG. 1 is a perspective view showing a method for manufacturing a magnetic alloy film according to a first embodiment of the present invention.

【図2】本発明の一実施の形態2による磁気ヘッドの斜
視図
FIG. 2 is a perspective view of a magnetic head according to Embodiment 2 of the present invention;

【符号の説明】[Explanation of symbols]

1 FeTa合金 2 Zn 3 バッキングプレート 5 基板 6 磁性合金膜 7 磁気ギャップ 8 Mn−Znフェライト基板 9 接合ガラス 40 スパッタターゲット(FeTaZn) 41 スパッタターゲット(FeTa) DESCRIPTION OF SYMBOLS 1 FeTa alloy 2 Zn 3 Backing plate 5 Substrate 6 Magnetic alloy film 7 Magnetic gap 8 Mn-Zn ferrite substrate 9 Bonding glass 40 Sputter target (FeTaZn) 41 Sputter target (FeTa)

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) G11B 5/187 G11B 5/187 F H01F 10/14 H01F 10/14 (72)発明者 村岡 俊作 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 山西 斉 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Fターム(参考) 4K029 BA58 BC01 BC06 BD00 CA06 DC03 DC04 DC15 DC16 5D111 AA01 AA13 BB33 BB48 FF05 GG14 HH01 JJ05 KK20 5E049 AA01 AA09 BA12 CC01 GC02──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) G11B 5/187 G11B 5/187 F H01F 10/14 H01F 10/14 (72) Inventor Toshisaku Muraoka Kadoma, Osaka 1006 Kadoma, Ichidai-ji Matsushita Electric Industrial Co., Ltd. BB33 BB48 FF05 GG14 HH01 JJ05 KK20 5E049 AA01 AA09 BA12 CC01 GC02

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 溶解して作製したFeTa合金ターゲッ
トとZn単体のターゲットを同時に放電させ、Arガス
中にN2ガスを導入した雰囲気中でスパッタリングを行
うことにより、FeTaZnNの組成を有する磁性合金
膜を成膜することを特徴とする磁性合金膜の製造方法。
1. A magnetic alloy film having a composition of FeTaZnN is formed by simultaneously discharging an FeTa alloy target and a Zn single target produced by melting and performing sputtering in an atmosphere in which N2 gas is introduced into Ar gas. A method for producing a magnetic alloy film, comprising forming a film.
【請求項2】 溶解して作製したFeTa合金とZn単
体を各々少なくとも1ピース同一のバッキングプレート
上に分散して配置した複合ターゲットを用いることを特
徴とする請求項1記載の磁性合金膜の製造方法。
2. A magnetic alloy film according to claim 1, wherein a composite target is used in which at least one piece of a FeTa alloy and a simple substance of Zn prepared by melting are dispersed and arranged on at least one piece of the same backing plate. Method.
【請求項3】 溶解して作製したFeTa合金ターゲッ
トと、Zn単体または請求項2記載の複合ターゲットを
各々取り付けた電極を同時に放電させるとともに基板を
回転させながら成膜することを特徴とする請求項1記載
の磁性合金膜の製造方法。
3. An electrode provided with a FeTa alloy target produced by melting and Zn alone or the composite target according to claim 2 is simultaneously discharged, and a film is formed while rotating the substrate. 2. The method for producing a magnetic alloy film according to item 1.
【請求項4】 請求項1,2および3のいずれかに記載
の製造方法で成膜された磁性合金膜を磁気コアとして用
いたことを特徴とする磁気ヘッド。
4. A magnetic head using a magnetic alloy film formed by the method according to claim 1, 2 or 3 as a magnetic core.
JP2001026418A 2001-02-02 2001-02-02 Method of manufacturing magnetic alloy film and magnetic head Pending JP2002231554A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001026418A JP2002231554A (en) 2001-02-02 2001-02-02 Method of manufacturing magnetic alloy film and magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001026418A JP2002231554A (en) 2001-02-02 2001-02-02 Method of manufacturing magnetic alloy film and magnetic head

Publications (1)

Publication Number Publication Date
JP2002231554A true JP2002231554A (en) 2002-08-16

Family

ID=18891236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001026418A Pending JP2002231554A (en) 2001-02-02 2001-02-02 Method of manufacturing magnetic alloy film and magnetic head

Country Status (1)

Country Link
JP (1) JP2002231554A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020517832A (en) * 2017-04-27 2020-06-18 エヴァテック・アーゲー Soft magnetic multilayer deposition apparatus, method of manufacture, and magnetic multilayer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020517832A (en) * 2017-04-27 2020-06-18 エヴァテック・アーゲー Soft magnetic multilayer deposition apparatus, method of manufacture, and magnetic multilayer

Similar Documents

Publication Publication Date Title
WO2001093286A1 (en) Magnetic thin film, production method therefor, evaluation method therefor and magnetic head using it, magnetic refcording device and magnetic device
JPS63119209A (en) Soft magnetic thin-film
EP0032180B1 (en) Amorphous magnetic alloy containing at least co and ti
JP2002231554A (en) Method of manufacturing magnetic alloy film and magnetic head
JPS6122852B2 (en)
WO1996027877A1 (en) Magnetic recording medium and method of manufacturing the same
JPH06140687A (en) Magnetic film for magnetoresistance element and its manufacture
US5411813A (en) Ferhgasi soft magnetic materials for inductive magnetic heads
JP2996553B2 (en) Soft magnetic alloy thin film
JPS59157828A (en) Magnetic recording medium
JPH03265105A (en) Soft magnetic laminate film
JPH0744107B2 (en) Soft magnetic thin film
EP0522982B1 (en) An FeGaSi-based magnetic material with Ir as an additive
JP2774705B2 (en) High saturation magnetic flux density soft magnetic film
JP2728715B2 (en) Garnet-based magnetic material
JPH0665662A (en) Soft magnetic alloy
JP3087265B2 (en) Magnetic alloy
JPH0512765B2 (en)
JPS6315654B2 (en)
JPS59157831A (en) Magnetic recording medium
JPH0423413A (en) Magnetic thin film and manufacture thereof and magnetic head
JPS62269305A (en) Thin film of magnetic material and manufacture thereof
JPH0410402A (en) Soft magnetic thin film, its manufacture, and magnetic head
JPH0261819A (en) Perpendicular magnetic recording medium
JPH0744106B2 (en) Soft magnetic thin film