JP2002222912A - 高周波マルチチップモジュール及び製造方法 - Google Patents

高周波マルチチップモジュール及び製造方法

Info

Publication number
JP2002222912A
JP2002222912A JP2001018194A JP2001018194A JP2002222912A JP 2002222912 A JP2002222912 A JP 2002222912A JP 2001018194 A JP2001018194 A JP 2001018194A JP 2001018194 A JP2001018194 A JP 2001018194A JP 2002222912 A JP2002222912 A JP 2002222912A
Authority
JP
Japan
Prior art keywords
substrate
chip
frequency multi
chip module
functional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001018194A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002222912A5 (cg-RX-API-DMAC7.html
Inventor
Taku Fujita
卓 藤田
Kazuaki Takahashi
和晃 高橋
Hiroshi Ogura
洋 小倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001018194A priority Critical patent/JP2002222912A/ja
Publication of JP2002222912A publication Critical patent/JP2002222912A/ja
Publication of JP2002222912A5 publication Critical patent/JP2002222912A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6661High-frequency adaptations for passive devices
    • H01L2223/6677High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15321Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA

Landscapes

  • Control Of Motors That Do Not Use Commutators (AREA)
  • Waveguides (AREA)
JP2001018194A 2001-01-26 2001-01-26 高周波マルチチップモジュール及び製造方法 Withdrawn JP2002222912A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001018194A JP2002222912A (ja) 2001-01-26 2001-01-26 高周波マルチチップモジュール及び製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001018194A JP2002222912A (ja) 2001-01-26 2001-01-26 高周波マルチチップモジュール及び製造方法

Publications (2)

Publication Number Publication Date
JP2002222912A true JP2002222912A (ja) 2002-08-09
JP2002222912A5 JP2002222912A5 (cg-RX-API-DMAC7.html) 2007-11-29

Family

ID=18884252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001018194A Withdrawn JP2002222912A (ja) 2001-01-26 2001-01-26 高周波マルチチップモジュール及び製造方法

Country Status (1)

Country Link
JP (1) JP2002222912A (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8432316B2 (en) 2009-08-27 2013-04-30 Sony Corporation High frequency device
JP2013247495A (ja) * 2012-05-25 2013-12-09 Nippon Telegr & Teleph Corp <Ntt> ホーンアンテナ一体型mmicパッケージ
WO2021255963A1 (ja) 2020-06-17 2021-12-23 株式会社フジクラ 無線モジュール

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8432316B2 (en) 2009-08-27 2013-04-30 Sony Corporation High frequency device
JP2013247495A (ja) * 2012-05-25 2013-12-09 Nippon Telegr & Teleph Corp <Ntt> ホーンアンテナ一体型mmicパッケージ
WO2021255963A1 (ja) 2020-06-17 2021-12-23 株式会社フジクラ 無線モジュール
CN114158256A (zh) * 2020-06-17 2022-03-08 株式会社藤仓 无线模块
US11901317B2 (en) 2020-06-17 2024-02-13 Fujikura Ltd. Wireless module

Similar Documents

Publication Publication Date Title
US8760342B2 (en) Circuit board, high frequency module, and radar apparatus
JP3141692B2 (ja) ミリ波用検波器
EP1515389B1 (en) Multilayer high frequency device with planar antenna thereon and manufacturing method thereof
US7768457B2 (en) Integrated antenna and chip package and method of manufacturing thereof
CN102782934B (zh) 用于表面安装的微型微波部件
JP3472430B2 (ja) アンテナ一体化高周波回路
JP3378435B2 (ja) 超高周波帯無線通信装置
Goettel et al. Packaging solution for a millimeter-wave system-on-chip radar
JP5209610B2 (ja) 高周波回路基板、高周波回路モジュールおよびレーダ装置
JP6314705B2 (ja) 高周波モジュール及びその製造方法
US20030080836A1 (en) High frequency circuit module
JP2009038696A (ja) アンテナ付き集積回路パッケージ
Zwick et al. Pea-sized mmW transceivers: QFN-? Based packaging concepts for millimeter-wave transceivers
JPH10125830A (ja) 高周波モジュールおよびその製造方法
JP3969321B2 (ja) 高周波送受信モジュール
JP2003007910A (ja) 半導体装置
JP2001036309A (ja) マルチチップモジュール接続構造
JP2002222912A (ja) 高周波マルチチップモジュール及び製造方法
CN221747224U (zh) 高频芯片封装结构
CN208111437U (zh) 混合印刷电路板
JP2003332517A (ja) マイクロ波集積回路及びその製造方法並びに無線装置
JP2798070B2 (ja) 複合マイクロ波集積回路
JP3314163B2 (ja) 半導体素子収納用パッケージ
CN108550570A (zh) 集成垂直辐射天线的高频集成电路模块及其封装方法
CN208111438U (zh) 混合印刷电路板

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20071005

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071012

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071012

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071107

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20071114

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071121

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20071128

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071205

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071212

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080327

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20090914