JP2002219329A - Noxious gas detoxifying apparatus - Google Patents

Noxious gas detoxifying apparatus

Info

Publication number
JP2002219329A
JP2002219329A JP2001018122A JP2001018122A JP2002219329A JP 2002219329 A JP2002219329 A JP 2002219329A JP 2001018122 A JP2001018122 A JP 2001018122A JP 2001018122 A JP2001018122 A JP 2001018122A JP 2002219329 A JP2002219329 A JP 2002219329A
Authority
JP
Japan
Prior art keywords
liquid
gas
circulation path
liquid tank
mixing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001018122A
Other languages
Japanese (ja)
Other versions
JP4805463B2 (en
Inventor
Masami Muto
正美 武藤
Takeaki Kasahara
丈明 笠原
Kokuka Jo
国華 徐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOUSETSU KK
Original Assignee
TOUSETSU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOUSETSU KK filed Critical TOUSETSU KK
Priority to JP2001018122A priority Critical patent/JP4805463B2/en
Publication of JP2002219329A publication Critical patent/JP2002219329A/en
Application granted granted Critical
Publication of JP4805463B2 publication Critical patent/JP4805463B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To detoxify noxious gas safely and efficiently. SOLUTION: A pump 3 and a gas-liquid mixing and stirring device 4 are provided on a circulating passage 5 communicating with a liquid tank 1 and a suction pipe 12 of noxious gas is provided to the gas-liquid mixing and stirring device 4, and a water supply line 8, an overflow pipe 9 and a pH meter 7 are provided on the liquid tank 1.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、半導体製造装置
や液晶製造装置等から排出される有害ガスを除害、回収
するための有害ガスの除害装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a harmful gas abatement apparatus for removing and collecting harmful gases discharged from a semiconductor manufacturing apparatus, a liquid crystal manufacturing apparatus and the like.

【0002】[0002]

【従来の技術】半導体製造ラインや液晶製造ラインから
排出されるガスには、SiO2やWO3等の微細な粉体と同時
に有害なガスが含まれているので、そのまま大気中に放
出することができない。そこで、従来、次の様な方法で
除害している。 (1)パンチングプレートの開口を通過させ、微細化す
る、いわゆる湿式のハ゛フ゛リンク゛方式、(2)充填物の表面に
形成された水膜と、ガスとの慣性衝突、微細粒子の拡散
付着によってダストの捕集を行う、いわゆる充填材方
式、(3)燃焼方式や加熱方式若しくは乾式による処理、
2. Description of the Related Art Gases discharged from a semiconductor production line or a liquid crystal production line contain harmful gases at the same time as fine powders such as SiO 2 and WO 3. Can not. Therefore, conventionally, the harm is removed by the following method. (1) The so-called wet-type of a hot-water-filling method, which passes through the opening of the punching plate and makes it finer. So-called filler method, which performs collection, (3) treatment by combustion method, heating method or dry method,

【0003】しかし、前記(1)(2)の方式では、除
害効率が悪く、特に塩素ではアルカリの添加が必要である。
しかし、この様な薬剤を用いると、安全性環境性などに
おいて問題が発生するので、好ましくない。前記(3)の
方式では、多くの電力を必要としたり、燃焼用のガスの
配管が必要で、火種があること等、欠点も多い。又、乾
式においてもランニングコストが高いという欠点を有し
ている。
[0003] However, in the methods (1) and (2), the abatement efficiency is poor. Particularly, chlorine requires the addition of an alkali.
However, the use of such a drug is not preferable because it causes problems in safety and environment. The method (3) requires a large amount of electric power, requires piping for a gas for combustion, and has many drawbacks such as the presence of a fire. In addition, there is a disadvantage that the running cost is high even in the dry type.

【0004】本発明は、上記事情に鑑み、安全に効率よ
く除害することを目的とする。
[0004] In view of the above circumstances, an object of the present invention is to safely and efficiently remove harm.

【0005】[0005]

【課題を解決するための手段】本発明は、有毒ガスを水
に混入せしめて除害する装置において、処理液を貯溜す
る液体槽と、該液体槽に連通する循環路と、該循環路に
配設され、吸気管から吸入された有毒ガスを処理液と混
合攪拌し微細な気泡にする気液混合・攪拌装置と、該循
環路に設けられ、処理液を強制循環せしめるポンプと、
を備えたことを特徴とする。
According to the present invention, there is provided an apparatus for removing harmful gas by mixing toxic gas into water, a liquid tank for storing a processing liquid, a circulation path communicating with the liquid tank, A gas-liquid mixing / stirring device which is disposed and mixes and agitates the toxic gas sucked from the suction pipe with the processing liquid to form fine bubbles, and a pump provided in the circulation path for forcibly circulating the processing liquid,
It is characterized by having.

【0006】この発明は、有毒ガスを水に混入せしめて
除害する装置において、処理液を貯溜する液体槽と、該
液体槽に連通する循環路と、該循環路に配設され、吸気
管から吸入された有毒ガスを処理液と混合攪拌し微細な
気泡にする気液混合・攪拌装置と、該循環路に設けら
れ、処理液を強制循環せしめるポンプと、該液体槽内の
処理液の使用限界を検出する監視手段と、該監視手段に
連動し、処理液を調整する給排手段と、を備えているこ
とを特徴とする。
According to the present invention, there is provided an apparatus for removing harmful gas by mixing toxic gas into water, a liquid tank for storing a processing liquid, a circulation path communicating with the liquid tank, and an intake pipe provided in the circulation path. A gas-liquid mixing / stirring device which mixes and agitates the toxic gas sucked from the processing liquid with the processing liquid to form fine bubbles, a pump provided in the circulation path for forcibly circulating the processing liquid, and a processing liquid in the liquid tank. It is characterized by comprising a monitoring means for detecting a usage limit, and a supply / discharge means for adjusting a processing liquid in conjunction with the monitoring means.

【0007】この発明は、半導体製造装置や液晶製造装
置に使用される有毒ガスを除害する装置において、液体
槽の外部に接続した循環路に気液混合・攪拌装置を介装
し、該循環路に前記製造装置から排気される有毒ガスを
導入するための吸気管を設け、該循環路に設けたポンプ
#により、該液体槽内の液を該循環路に循環させると共
に該吸気管より前記製造装置から排気される有毒ガスを
導入せしめ、該気液混合・攪拌装置により有毒ガスと液
を混合せしめて該液体槽に戻す機構と、該液体槽内の液
を入れ替えるための給液機構と排液機構と、処理後のガ
スを排気するための排気機構と、を有することを特徴と
する。
The present invention relates to a device for removing toxic gas used in a semiconductor manufacturing apparatus or a liquid crystal manufacturing apparatus, wherein a gas-liquid mixing / stirring device is interposed in a circulation path connected to the outside of a liquid tank, and the circulation is performed. A suction pipe for introducing toxic gas exhausted from the manufacturing apparatus into a passage, and a pump provided in the circulation passage
With #, the liquid in the liquid tank is circulated to the circulation path, and at the same time, the toxic gas exhausted from the manufacturing apparatus is introduced from the suction pipe, and the toxic gas and the liquid are mixed by the gas-liquid mixing / stirring device. It is characterized by having a mechanism for returning to the liquid tank, a liquid supply mechanism and a drainage mechanism for replacing the liquid in the liquid tank, and an exhaust mechanism for exhausting the gas after processing.

【0008】[0008]

【発明の実施の形態】本発明者は、水だけで除害効率を
上げ、塩素やアンモニア等の除害が可能になれば、前記諸問
題は解決するものと考えた。そこで、処理液を貯溜する
液体槽に循環路を連結し、該循環路にポンプと気液混合
・撹拌装置とを設け、該気液混合・攪拌装置に有毒ガス
を供給して混合し、除害効率を測定した。その結果、従
来方式の塩素除害効率は20% 前後であるのに対し、
本発明では99.999%以上の初期除害能力があり、従来の
方式に比べ、除害効率が飛躍的に向上することがわかっ
た。本発明は、上記研究結果に基づくものである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present inventor has considered that the above-mentioned problems will be solved if the abatement efficiency is increased by using only water and the abatement of chlorine, ammonia and the like becomes possible. Therefore, a circulation path is connected to a liquid tank for storing the processing liquid, and a pump and a gas-liquid mixing / stirring device are provided in the circulation path, and a toxic gas is supplied to the gas-liquid mixing / stirring device for mixing and removal. The harm efficiency was measured. As a result, the chlorine removal efficiency of the conventional method is around 20%,
The present invention has an initial abatement capacity of 99.999% or more, and it has been found that the abatement efficiency is dramatically improved as compared with the conventional system. The present invention is based on the above research results.

【0009】[0009]

【実施例】本発明の第1実施例を図1〜図4に基づいて
説明する。図1は、本発明の一実施例のフロー図であ
る。液体槽1には、処理液、例えば、水Wが貯溜されて
いる。この液体槽1には、その外部に液体槽1内の液W
を循環させるための循環路5が配置され、循環路5には
ポンプ3、圧力計PIA-1、流量計F-2並びに気液混合・攪
拌装置4が介装されている。ホ゜ンフ゜3は、インハ゛ーターIVの設
定値により回転数が可変出来、流量及び圧力が調整でき
るように構成されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a flowchart of one embodiment of the present invention. In the liquid tank 1, a processing liquid, for example, water W is stored. This liquid tank 1 has a liquid W
A circulation path 5 for circulating water is disposed, and the circulation path 5 is provided with a pump 3, a pressure gauge PIA-1, a flow meter F-2, and a gas-liquid mixing / stirring device 4. The horn 3 is configured such that the number of revolutions can be varied according to the set value of the inverter IV, and the flow rate and the pressure can be adjusted.

【0010】液体槽1には、液量が一定量、例えば、1
00リットル、を越えると、排液するようにオーバーフ
ロー管9と、給水ライン8と、が設けられている。給水
ライン8には、電磁弁10が介装され、通常は閉じてい
るが、pH計7により検出される液体槽1内のpH値に
より電磁弁10が開き液体槽1内に給水するように構成
されている。
In the liquid tank 1, a fixed amount of liquid, for example, 1
An overflow pipe 9 and a water supply line 8 are provided so as to drain the liquid when the volume exceeds 00 liters. An electromagnetic valve 10 is interposed in the water supply line 8 and is normally closed. However, the electromagnetic valve 10 is opened according to the pH value in the liquid tank 1 detected by the pH meter 7 so that water is supplied into the liquid tank 1. It is configured.

【0011】気液混合・攪拌装置4には、半導体製造装
置や液晶製造装置からの排気を吸気するための吸気管1
3が接続されている。吸気管13には、圧力計PIA-1
と、吸気量を調整するためのダイヤフラムバルブ15、
吸気の負圧を補助するためのファン12及び洗浄機構6
が介装されている。
The gas-liquid mixing / stirring device 4 has an intake pipe 1 for taking in exhaust gas from a semiconductor manufacturing device or a liquid crystal manufacturing device.
3 are connected. The intake pipe 13 has a pressure gauge PIA-1
And a diaphragm valve 15 for adjusting the intake air amount,
Fan 12 and cleaning mechanism 6 for assisting negative pressure of intake air
Is interposed.

【0012】洗浄機構6には、給水ライン8から分岐し
て電磁弁11を介して給水ができるように給水パイプ1
6が接続されている。液体槽1には、気液混合・攪拌装
置4により混合攪拌されて液体槽1に達し、除害された
カ゛スを排気するための排気口14が設けられており、生
産ラインの排気管と接続できるように構成されている。
The water supply pipe 1 is connected to the cleaning mechanism 6 so that water can be supplied from the water supply line 8 via a solenoid valve 11.
6 is connected. The liquid tank 1 is provided with an exhaust port 14 for exhausting the gas that has been mixed and stirred by the gas-liquid mixing / stirring device 4 to reach the liquid tank 1 and has been harmed, and is connected to an exhaust pipe of a production line. It is configured to be able to.

【0013】気液混合・攪拌装置4は、図2に示すよう
に、円筒ケーシンク゛17と、一対の二つ割り楕円盤18、1
9と、下流側に配置された突起群20と、から構成さ
れ、二つ割り楕円盤18、19の弦側側縁18a,19
aを交差させ、一対の二つ割り楕円盤18、19の円弧
側側縁18b、19bを円筒ケーシンク゛17の内壁に接する
ように構成されている。
As shown in FIG. 2, the gas-liquid mixing / stirring device 4 comprises a cylindrical casing sink # 17, a pair of split elliptical plates 18,
9 and a projection group 20 arranged on the downstream side, and the chord side edges 18a, 19 of the split ellipsoids 18, 19
a are crossed so that the arc-side edges 18b and 19b of the pair of split elliptical discs 18 and 19 are in contact with the inner wall of the cylindrical casing # 17.

【0014】カ゛ス導入パイプ21は、図3に示す様に、
気液混合・撹拌装置4に接続されている。ホ゜ンフ゜3によ
り気液混合・攪拌装置4に液体槽1内の液Wが送られ、
前記二つ割り楕円盤18、19の作用により液が螺旋流
を起こしカ゛ス導入パイプ21からのカ゛スと混合されるが、
突起群20の作用でカ゛スは微細に砕かれ、液Wと混合す
るように構成されている。
The gas introduction pipe 21 is, as shown in FIG.
It is connected to a gas-liquid mixing / stirring device 4. The liquid W in the liquid tank 1 is sent to the gas-liquid mixing / stirring device 4 by the horn 3,
Due to the action of the split elliptical discs 18 and 19, the liquid causes a spiral flow and is mixed with the gas from the gas introduction pipe 21.
The gas is finely crushed by the operation of the projection group 20 and is mixed with the liquid W.

【0015】図4は、吸気管13の詳細図であり、製造
装置からのカ゛スの排気続する接続口23の下流には、圧
力計Pが設けられ、吸気圧力が監視できるようになって
いる。更に下流には、ダイヤフラムバルブ15が介装さ
れ、ファン12に流入するカ゛ス量を調整できるようにな
っている。本実施例では、ファン12を用いているが、
気液混合・攪拌装置4に液Wを流すことにより気液混合
・攪拌装置4内に負圧が生じ、その作用だけでカ゛スを吸
引することも可能で、処理するカ゛ス量によってはファン
を設けなくても良い。
FIG. 4 is a detailed view of the intake pipe 13. A pressure gauge P is provided downstream of the connection port 23 to which the gas from the manufacturing apparatus is connected, so that the intake pressure can be monitored. . Further downstream, a diaphragm valve 15 is interposed so that the amount of gas flowing into the fan 12 can be adjusted. In this embodiment, the fan 12 is used.
By flowing the liquid W through the gas-liquid mixing / stirring device 4, a negative pressure is generated in the gas-liquid mixing / stirring device 4, and the gas can be sucked by the action alone. A fan may be provided depending on the amount of gas to be processed. You don't have to.

【0016】ファン12の下流側には、洗浄機構6が配
置され、給水パイプ16からの給水により開口6aに水
が回り、スリット6bから水Wが流出し、下流の管壁6
cを洗浄できるように構成されている。洗浄機構6近傍
の配管には、ヒーター24が巻かれており、配管上部を
保温している。
On the downstream side of the fan 12, a cleaning mechanism 6 is disposed. Water is supplied to the opening 6a by water supplied from the water supply pipe 16, and water W flows out of the slit 6b.
It is configured to be able to wash c. A heater 24 is wound around the pipe near the cleaning mechanism 6 to keep the upper part of the pipe warm.

【0017】次に、本実施例の作動について説明する。
起動ボタン(図示せず)をオンすると、ホ゜ンフ゜3が起動
し液体槽1内の液Wを循環路5に回し始め、循環路5内
の流量が略一定となる。その後、ファン12が起動し製
造装置の排気管より導かれた有毒ガスを循環系路内に送
り込む。気液混合・攪拌装置4内に送り込まれた液Wと
カ゛スGは、前述の作用により混合・攪拌され、カ゛スは微細
な気泡、例えば、直径0.5〜3.0μmの気泡、となって液
体槽1に戻され、除害される。
Next, the operation of this embodiment will be described.
When a start button (not shown) is turned on, the horn 3 is started and the liquid W in the liquid tank 1 starts to be circulated to the circulation path 5, and the flow rate in the circulation path 5 becomes substantially constant. Thereafter, the fan 12 is activated and sends the toxic gas guided from the exhaust pipe of the manufacturing apparatus into the circulation path. The liquid W and the gas G sent into the gas-liquid mixing / stirring device 4 are mixed and stirred by the above-mentioned action, and the gas is turned into fine bubbles, for example, bubbles having a diameter of 0.5 to 3.0 μm, and becomes a liquid tank 1. It is returned and is harmed.

【0018】上記作用により、時間の経過と共に液体槽
1内のカ゛スの溶解濃度が増加していく。即ち、液体槽1
内の液量は、100リットルに設定されており、塩素を
200cc/分の割合で処理した場合、約20分後には
pH値が4以下となり徐々に除害効率が落ちてしまう。
そのため、液体槽1内のpH値をpH計7で監視し、予
め設定されたpH値を維持するように、給水ライン8に
介装された電磁弁10を流量計F-1を見ながらオン・オ
フし、給水制御を行っている。
By the above operation, the dissolved concentration of the gas in the liquid tank 1 increases with time. That is, the liquid tank 1
The amount of the liquid inside is set to 100 liters, and when chlorine is treated at a rate of 200 cc / min, the pH value becomes 4 or less after about 20 minutes, and the abatement efficiency gradually decreases.
For this reason, the pH value in the liquid tank 1 is monitored by the pH meter 7, and the solenoid valve 10 interposed in the water supply line 8 is turned on while watching the flow meter F-1 so as to maintain a preset pH value.・ Turn off and control water supply.

【0019】給水が開始されると、液体槽1内の液量が
増加し、オーバーフロー管9より100リットルを越え
た液は排液されるようになっている。かかる給排水機構
の作用で時間が経過しても一定の除害効率が維持できる
ようになっている。
When water supply is started, the amount of liquid in the liquid tank 1 increases, and liquid exceeding 100 liters from the overflow pipe 9 is drained. By the operation of the water supply / drainage mechanism, a constant detoxification efficiency can be maintained even after a lapse of time.

【0020】本実施例では、pH値によって給排水を制
御しているが、予め処理するカ゛スの量が判っている場合
には、タイマー設定により液の入れ替えを実施しても良い。
又、給水・排水の機構は、ここに開示されたものに限ら
ず、液体槽1の下部に電磁弁31を介した排液管39を
設け、液面センサーLによる制御で排液後に給液を行っ
ても良い。
In this embodiment, the supply and drainage is controlled by the pH value. However, if the amount of gas to be treated is known in advance, the liquid may be replaced by setting a timer.
The water supply / drainage mechanism is not limited to the one disclosed here. A drainage pipe 39 is provided below the liquid tank 1 via an electromagnetic valve 31, and is controlled by a liquid level sensor L to supply water after drainage. May be performed.

【0021】上記の作用によって本実施例では、時間が
経過しても、安定してカ゛スを除害することができ、除害
されたカ゛スは、液体槽1上部に設けられた排気口14よ
り排気されるようになっている為、水溶性のカ゛スであれ
ば、きわめて効率よくカ゛スの除害を行うことができる。
更に、本実施例は、カ゛スだけでなく、半導体製造ライン
や液晶製造ラインでよく問題になっている粉体に対して
も有用である。
According to the present embodiment, the gas can be stably harmed even after a lapse of time in the present embodiment, and the harmed gas is discharged from the exhaust port 14 provided in the upper portion of the liquid tank 1. Since the gas is exhausted, the gas can be removed very efficiently if the gas is water-soluble.
Further, the present embodiment is useful not only for gas, but also for powders that are often problematic in semiconductor production lines and liquid crystal production lines.

【0022】製造装置から排出されるガスには、微細な
粉体が含まれている場合があり、その粉体が配管のつま
り等を生じせしめる事がある。粉体は、冷却された部分
に付着しやすいため、本実施例では配管の保温と共に定
期的に給水パイプ16から水を流して、湿度が高いため
に管壁に付着した粉を洗い流し気液混合・攪拌装置4に
送り込み、その攪拌作用によって粉をトラップし、排気
口に流入する粉を最小限に押さえる作用も持っている。
In some cases, the gas discharged from the manufacturing apparatus contains fine powder, and the powder may cause clogging of the piping. In the present embodiment, water is periodically flowed from the water supply pipe 16 while the pipe is kept warm, and the powder adhered to the pipe wall is washed away due to high humidity, and the gas-liquid mixture is performed. -The powder is sent to the stirring device 4, and the powder is trapped by the stirring action, and also has the function of minimizing the powder flowing into the exhaust port.

【0023】この発明の第2実施例を図5により説明す
る。この実施例と第1実施例との相違点は、旋回流発生
手段として、気液混合・撹拌装置4に一対の堕円板を設
ける代わりに、螺旋状のガイドベーン18Aを設けたこ
とである。
A second embodiment of the present invention will be described with reference to FIG. The difference between this embodiment and the first embodiment is that a spiral guide vane 18A is provided as a swirling flow generating means instead of providing a pair of fallen disks in the gas-liquid mixing / stirring device 4. .

【0024】この発明の第3実施例を図6により説明す
る。この実施例と第1実施例との相違点は、円筒状の液
体槽1内にパンチングプレート22を配設したことであ
る。液体槽1の周壁1aは、円筒形に形成され、その中
には、楕円状のパンチングプレート22が上下方向に傾
斜して配設されている。
A third embodiment of the present invention will be described with reference to FIG. The difference between this embodiment and the first embodiment is that a punching plate 22 is provided in the cylindrical liquid tank 1. The peripheral wall 1a of the liquid tank 1 is formed in a cylindrical shape, in which an elliptical punching plate 22 is disposed inclined in the vertical direction.

【0025】このパンチングプレート22には、下面と
上面とを連通させる複数の開口22aが設けられ、その
外周縁は液体槽1の内面に接するように斜めに配置され
ている。この開口22aの直径は、微細な気泡の直径と
同径、例えば、直径2mm、に形成されている。ホ゜ンフ゜3へ
の液の導入口5aは、パンチングプレート22の上端2
2b近傍でパンチングプレート22の下面側になるよう
に配置され、吐出口5bは、パンチングプレート22の
下端22c近傍でパンチングプレート22の下面側にな
るように配置されている。吐出口5bは、周壁1aに対
して接線方向に設けられているので、該吐出口5bから
排出された処理液は周壁1aに沿って旋回するようにな
る。
The punching plate 22 is provided with a plurality of openings 22 a for communicating the lower surface and the upper surface, and the outer peripheral edge thereof is obliquely arranged so as to contact the inner surface of the liquid tank 1. The diameter of the opening 22a is the same as the diameter of the fine bubble, for example, 2 mm in diameter. The liquid inlet 5a to the horn 3 is located at the upper end 2 of the punching plate 22.
The discharge port 5b is disposed so as to be on the lower surface side of the punching plate 22 near 2b, and the discharge port 5b is disposed on the lower surface side of the punching plate 22 near the lower end 22c of the punching plate 22. Since the discharge port 5b is provided tangentially to the peripheral wall 1a, the processing liquid discharged from the discharge port 5b turns along the peripheral wall 1a.

【0026】このようにパンチングプレート22を設け
ると、十分に微細化されなかった気泡はパンチングプレ
ート22の開口22aを抜けて上昇せずにパンチングプ
レート22に沿って上昇し、ホ゜ンフ゜3への導入口5aよ
り再度循環路5に吸引され微細化されることとなる。
尚、実験によると、循環路5の液流量の略30%のカ゛ス
量であれば気液混合・攪拌装置4の作用で十分に微細化
されるため、カ゛ス処理量によってはパンチングプレート
22は設置する必要がない。
When the punching plate 22 is provided in this manner, the air bubbles which have not been sufficiently miniaturized rise along the punching plate 22 without passing through the opening 22a of the punching plate 22 and rise to the inlet to the phon 3. From 5a, it is sucked into the circulation path 5 again to be miniaturized.
According to an experiment, if the gas volume is approximately 30% of the liquid flow rate in the circulation path 5, the gas-liquid mixing / stirring device 4 can sufficiently reduce the size, so that the punching plate 22 may be installed depending on the gas processing volume. No need to do.

【0027】液体槽1を円筒形にすることにより、微細
化されたカ゛スの気泡が液体槽1内を螺旋状に回転しなが
ら上昇していくため長時間液体槽1内に滞留するので、
溶解効率を高めることができる。
By forming the liquid tank 1 into a cylindrical shape, the gas bubbles of the micronized gas rise while rotating in the liquid tank 1 in a helical manner, and stay in the liquid tank 1 for a long time.
Dissolution efficiency can be increased.

【0028】[0028]

【発明の効果】この発明は、以上のように構成したの
で、有毒ガスが水と混合攪拌され、微細な気泡となるの
で、安全に、かつ、効率よく除害することができる。ま
た、液体槽内の処理液の使用限界を監視し、処理液の性
能を調整できるので、効率よく除害することができる。
According to the present invention, the toxic gas is mixed and stirred with water to form fine bubbles, so that the harmful gas can be safely and efficiently removed. In addition, since the use limit of the processing liquid in the liquid tank can be monitored and the performance of the processing liquid can be adjusted, the harm can be efficiently eliminated.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1実施例を示すフローチャートであ
る。
FIG. 1 is a flowchart showing a first embodiment of the present invention.

【図2】気液混合・攪拌装置の斜視図である。FIG. 2 is a perspective view of a gas-liquid mixing / stirring device.

【図3】気液混合・攪拌装置の縦断面図である。FIG. 3 is a longitudinal sectional view of a gas-liquid mixing / stirring device.

【図4】吸気管の縦断面図である。FIG. 4 is a longitudinal sectional view of an intake pipe.

【図5】本発明の第2実施例を示す縦断面図で、図3に
対応する図である。
FIG. 5 is a longitudinal sectional view showing a second embodiment of the present invention, and is a view corresponding to FIG.

【図6】本発明の第3実施例を示す縦断面図で、液体槽
の斜視図である。
FIG. 6 is a longitudinal sectional view showing a third embodiment of the present invention, and is a perspective view of a liquid tank.

【符号の説明】[Explanation of symbols]

1 液体槽 1 ポンプ 4 気液混合、撹拌装置 5 循環路 12 吸気管 DESCRIPTION OF SYMBOLS 1 Liquid tank 1 Pump 4 Gas-liquid mixing and stirring device 5 Circulation path 12 Intake pipe

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】有毒ガスを水に混入せしめて除害する装置
において、 処理液を貯溜する液体槽と、 該液体槽に連通する循環路と、 該循環路に配設され、吸気管から吸入された有毒ガスを
処理液と混合攪拌し微細な気泡にする気液混合・攪拌装
置と、 該循環路に設けられ、該処理液を強制循環せしめるポン
プと、 を備えたことを特徴とする有害ガスの除害装置。
1. A device for removing harmful gas by mixing toxic gas into water, a liquid tank for storing a processing liquid, a circulation path communicating with the liquid tank, and disposed in the circulation path and sucked from an intake pipe. A gas-liquid mixing / stirring device that mixes and stirs the toxic gas with the processing liquid to form fine bubbles, and a pump that is provided in the circulation path and forcibly circulates the processing liquid. Gas abatement equipment.
【請求項2】有毒ガスを水に混入せしめて除害する装置
において、 処理液を貯溜する液体槽と、 該液体槽に連通する循環路と、 該循環路に配設され、吸気管から吸入された有毒ガスを
処理液と混合攪拌し微細な気泡にする気液混合・攪拌装
置と、 該循環路に設けられ、処理液を強制循環せしめるポンプ
と、 該液体槽内の処理液の使用限界を検出する監視手段と、 該監視手段に連動し、処理液を調整する給排手段と、 を備えていることを特徴とする有害ガスの除害装置。
2. An apparatus for removing harmful gas by mixing toxic gas into water, comprising: a liquid tank for storing a processing liquid; a circulation path communicating with the liquid tank; A gas-liquid mixing / stirring device for mixing and agitating the toxic gas with the processing liquid to form fine bubbles, a pump provided in the circulation path for forcibly circulating the processing liquid, and a use limit of the processing liquid in the liquid tank A harmful gas elimination device, comprising: a monitoring means for detecting the pressure; and a supply / discharge means for adjusting the processing liquid in conjunction with the monitoring means.
【請求項3】半導体製造装置や液晶製造装置に使用され
る有毒ガスを除害する装置において、 液体槽の外部に接続した循環路に気液混合・攪拌装置を
介装し、該循環路に前記製造装置から排気される有毒ガ
スを導入するための吸気管を設け、該循環路に設けたポ
ンプにより、該液体槽内の液を該循環路に循環させると
共に該吸気管より前記製造装置から排気される有毒ガス
を導入せしめ、該気液混合・攪拌装置により有毒ガスと
液を混合せしめて該液体槽に戻す機構と、 該液体槽内の液を入れ替えるための給液機構と排液機構
と、 処理後のガスを排気するための排気機構と、 を有することを特徴とする有毒ガスの除害装置。
3. A device for removing toxic gas used in a semiconductor manufacturing apparatus or a liquid crystal manufacturing apparatus, wherein a gas-liquid mixing / stirring device is interposed in a circulation path connected to the outside of a liquid tank, and the circulation path is connected to the circulation path. An intake pipe for introducing toxic gas exhausted from the production apparatus is provided, and a pump provided in the circulation path circulates the liquid in the liquid tank to the circulation path and from the production apparatus through the intake pipe. A mechanism for introducing the toxic gas to be exhausted, mixing the toxic gas and the liquid by the gas-liquid mixing / stirring device, and returning the mixed liquid to the liquid tank; a liquid supply mechanism and a drainage mechanism for replacing the liquid in the liquid tank And an exhaust mechanism for exhausting the gas after the treatment.
【請求項4】気液混合・攪拌装置が、円筒ケーシンク゛と、円
筒内で液に回転を生じせしめるベーンと、ベーンの下流
側の円筒内壁に設けた突起と、を備えていることを特徴
とする請求項3記載の有害ガスの除害装置。
4. A gas-liquid mixing / stirring device comprising: a cylindrical casing; a vane for causing liquid to rotate in the cylinder; and a projection provided on a cylindrical inner wall downstream of the vane. The harmful gas abatement apparatus according to claim 3.
【請求項5】液体槽は、円筒形より成り、円筒形内部に
パンチングプレートを設け、該パンチングプレートを斜
めに円筒内部に接するように配置せしめ、ホ゜ンフ゜への給
液側を上部に吐出側を下部に配置したことを特徴とする
請求項3、又は、4記載の有害ガスの除害装置。
5. The liquid tank has a cylindrical shape, a punching plate is provided inside the cylindrical shape, and the punching plate is disposed so as to be obliquely in contact with the inside of the cylindrical shape, and the liquid supply side to the horn is on the upper side and the discharge side is on the upper side. The harmful gas abatement apparatus according to claim 3, wherein the harmful gas abatement apparatus is arranged at a lower part.
【請求項6】吸気管が、管内壁への付着物を洗浄する機
構を有していることを特徴とする請求項3、4、又は、
5記載の有害ガスの除害装置。
6. The air intake pipe has a mechanism for cleaning the deposits on the inner wall of the pipe.
5. The harmful gas removing device according to 5.
【請求項7】吸気管が、製造装置の排気を導入するため
のファンと、処理量を調整するためのバルブと、を備え
ていることを特徴とする請求項3、4、3、又は、5記
載の有害ガスの除害装置。
7. An air intake pipe comprising a fan for introducing exhaust gas from a manufacturing apparatus and a valve for adjusting a processing amount. 5. The harmful gas removing device according to 5.
【請求項8】液体槽内のpH値を測定し、あらかじめ設
定されたpH値を保つように給排液を制御するようにし
たことを特徴とする請求項3、4、5、6、又は、7記載
の有害ガスの除害装置。
8. The method according to claim 3, wherein a pH value in the liquid tank is measured, and supply / drainage is controlled so as to maintain a preset pH value. 8. The harmful gas abatement apparatus according to claim 7.
JP2001018122A 2001-01-26 2001-01-26 Toxic gas abatement equipment Expired - Lifetime JP4805463B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001018122A JP4805463B2 (en) 2001-01-26 2001-01-26 Toxic gas abatement equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001018122A JP4805463B2 (en) 2001-01-26 2001-01-26 Toxic gas abatement equipment

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JP2002219329A true JP2002219329A (en) 2002-08-06
JP4805463B2 JP4805463B2 (en) 2011-11-02

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ID=18884182

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Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50145749U (en) * 1974-05-24 1975-12-02
JPS59162939A (en) * 1983-03-09 1984-09-13 Fujitsu Ltd Chemical reaction gas exhaust apparatus
JPS6390423U (en) * 1986-12-01 1988-06-11
JPS6467227A (en) * 1987-09-07 1989-03-13 Dainippon Screen Mfg Waste gas treating apparatus
JPH04131121A (en) * 1990-09-20 1992-05-01 Furukawa Electric Co Ltd:The Method and apparatus for treating exhaust gas
JPH07323211A (en) * 1994-05-30 1995-12-12 Kanken Techno Kk Method for removing semiconductor production waste gas and device therefor
JPH09103628A (en) * 1996-09-13 1997-04-22 Tousetsu:Kk Method for recovering mist of organic solvent in washing bath for washing using the organic solvent
JPH09155044A (en) * 1995-12-05 1997-06-17 Daikoku Denki Co Ltd Operation managing device for pachinko game machine
JPH09262433A (en) * 1996-03-28 1997-10-07 Kureha Chem Ind Co Ltd Cooling absorber for high temperature harmful gas and method thereof
JPH10128046A (en) * 1996-10-30 1998-05-19 Otsuka Giken Kogyo Kk Solvent recovery method and device therefor
JPH10244269A (en) * 1997-03-07 1998-09-14 Nichimen Denshi R & D Kk Ozone sterilizer for stored water
JPH11168067A (en) * 1997-12-02 1999-06-22 Kanken Techno Kk Equipment for eliminating damage and damage elimination method of semiconductor manufacturing off-gas
JP2002028431A (en) * 2000-07-12 2002-01-29 Asahi Yukinaka Ammonia diluting device

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50145749U (en) * 1974-05-24 1975-12-02
JPS59162939A (en) * 1983-03-09 1984-09-13 Fujitsu Ltd Chemical reaction gas exhaust apparatus
JPS6390423U (en) * 1986-12-01 1988-06-11
JPS6467227A (en) * 1987-09-07 1989-03-13 Dainippon Screen Mfg Waste gas treating apparatus
JPH04131121A (en) * 1990-09-20 1992-05-01 Furukawa Electric Co Ltd:The Method and apparatus for treating exhaust gas
JPH07323211A (en) * 1994-05-30 1995-12-12 Kanken Techno Kk Method for removing semiconductor production waste gas and device therefor
JPH09155044A (en) * 1995-12-05 1997-06-17 Daikoku Denki Co Ltd Operation managing device for pachinko game machine
JPH09262433A (en) * 1996-03-28 1997-10-07 Kureha Chem Ind Co Ltd Cooling absorber for high temperature harmful gas and method thereof
JPH09103628A (en) * 1996-09-13 1997-04-22 Tousetsu:Kk Method for recovering mist of organic solvent in washing bath for washing using the organic solvent
JPH10128046A (en) * 1996-10-30 1998-05-19 Otsuka Giken Kogyo Kk Solvent recovery method and device therefor
JPH10244269A (en) * 1997-03-07 1998-09-14 Nichimen Denshi R & D Kk Ozone sterilizer for stored water
JPH11168067A (en) * 1997-12-02 1999-06-22 Kanken Techno Kk Equipment for eliminating damage and damage elimination method of semiconductor manufacturing off-gas
JP2002028431A (en) * 2000-07-12 2002-01-29 Asahi Yukinaka Ammonia diluting device

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