JP2002217527A - Semiconductor device, its manufacturing method and method for disposing anisotropic conducting film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent peeling of an anisotropic conducting film which is to be generated, simultaneously with peeling of a protective film of the anisotropic conducting film, in flip-chip mounting using the anisotropic conducting film. SOLUTION: Bonding strength is increased by forming a pattern 4 for bonding in a belt type on a peripheral part in a region on which the anisotropic conducting film 3 is stuck. The same material as that of electrode patterns 2, which are wired in a region on which a bare IC is to be mounted, is used as material of the pattern 4, so that the height of the pattern 4 is made identical to that of the electrode patterns 2, contact area between a substrate 1 and the anisotropic conducting film 3 is enlarged, and bonding strength is increased.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, a method of manufacturing the same, and a method of mounting an anisotropic conductive film, and more particularly to a semiconductor mounting substrate on which a bare IC is flip-chip mounted.

[0002]

2. Description of the Related Art One method of flip-chip mounting a bare IC is a method of fixing the bare IC to a substrate using an anisotropic conductive film.

FIG. 3 is a view for explaining a conventional method of manufacturing a semiconductor device, and is a plan view of a semiconductor device in which an electrode pattern 2 is formed on a substrate 1 serving as a base. FIG. 4 shows a flip-chip mounting process using the substrate 1.

[0004] First, as shown in FIG. 4 (a), an anisotropic conductive film 3 formed in close contact with a protective film 5 is mounted on a substrate 1, and a predetermined temperature and pressure are applied to the entire surface by a pressure bonding head 6. In addition, since the anisotropic conductive film 3 has adhesiveness, the substrate 1 and the anisotropic conductive film 3 are adhered to each other.

[0005] Next, as shown in FIG. 4 (b), when the protective film 5 on the surface is peeled off from the peripheral portion, the anisotropic conductive film 3 is left on the substrate 1.

Next, as shown in FIG. 4C, a bare IC 7 on which bumps 8 are formed in advance is mounted on the substrate 1 by a positioning device. Due to the adhesiveness of the anisotropic conductive film 3, the bare IC 7 comes into close contact with the anisotropic conductive film 3 in a positioned state. At this time, the bump 8 and the electrode pattern 2 are in a state via the anisotropic conductive film 3.

[0007] Thereafter, as shown in FIG.
By applying pressure to the substrate 1 while applying heat to C7,
The electrode pattern 2 on the substrate 1 and the bump 8 of the bare IC 7 come close to each other, and finally the two are connected. At the same time, the anisotropic conductive film 3 is cured, so that the mechanical strength is maintained while the electrode pattern 2 and the bump 8 remain electrically connected.

[0008]

However, the substrate 1
Since the height is different between the portion where the electrode pattern 2 exists and the portion where the electrode pattern 2 does not exist, when the anisotropic conductive film 3 is bonded to the substrate 1, it is not bonded with a uniform pressure over the entire surface.
The electrode pattern 2 formed on the substrate 1 has a certain height as compared with the area without the electrode pattern 2 because the electrode material has a certain thickness. When pressure is applied to the substrate 1 by a pressure bonding head 6 having a parallelism to the substrate 1 in the temporary pressure bonding step shown in FIG. Since the height is high, a strong pressure is locally applied to increase the bonding strength. Conversely, the adhesive strength is weaker in other areas than in the area where the electrode pattern 2 exists. Since the peripheral portion of the protective film 5 does not have the electrode pattern 2, the adhesive strength is weak, and there is a problem that the anisotropic conductive film 3 is simultaneously peeled off from the periphery when the protective film 5 is peeled off from the peripheral portion. When the peeling of the anisotropic conductive film 3 reaches the region of the electrode pattern 2 on which the bare IC 7 is mounted, a connection failure occurs and the yield is reduced.

An object of the present invention is to provide a semiconductor mounting substrate in which the anisotropic conductive film 3 does not peel off even when the protective film 5 is peeled off.

[0010]

According to the present invention, there is provided a semiconductor device comprising:
A substrate, an electrode formed on the substrate, a platform formed on the substrate, an anisotropic conductive film formed on the substrate, and a semiconductor formed on the anisotropic conductive film An element, wherein the platform is formed near the periphery of the anisotropic conductive film. According to the present invention, the adhesive strength between the anisotropic conductive film and the platform is increased.

According to another aspect of the present invention, there is provided a semiconductor device, on which a bare IC is flip-chip mounted via an anisotropic conductive film, for bonding the anisotropic conductive film separately from an electrode pattern connected to a bump. Is formed so as to surround the periphery of the electrode pattern, and the electrode pattern and the bonding pattern have the same height. With such a configuration, the peripheral portion of the anisotropic conductive film is bonded to the bonding dummy pattern, and thus does not peel off when the protective sheet is peeled off.

Further, the present invention is characterized in that the bonding pattern and the electrode pattern are formed in the same step. By forming the bonding pattern in this way, the bonding pattern and the electrode pattern can be formed at the same height without adding a new process.

[0013]

Hereinafter, embodiments of the present invention will be described.
This will be described in detail with reference to the drawings.

FIG. 1 is a plan view showing a substrate 1 used for a semiconductor device according to an embodiment of the present invention. Figure 1
In FIG. 1, a plurality of electrode patterns 2 are formed on a substrate 1, and a bonding pattern 4 as a platform is formed so as to surround the plurality of electrode patterns 2. Electrode pattern 2
And the bonding pattern 4 are simultaneously formed by one patterning so as to have the same height.

FIG. 2 is a process sectional view showing a method of manufacturing a semiconductor device by flip-chip mounting using the substrate 1 having such an electrode pattern 2 and the bonding pattern 4.

First, as shown in FIG. 2A, an anisotropic conductive film 3 formed in close contact with a protective film 5 is mounted on a substrate 1, and a predetermined temperature and pressure are applied to the entire surface by a pressure bonding head 6. In addition, since the anisotropic conductive film 3 has adhesiveness, the substrate 1 and the anisotropic conductive film 3 are adhered to each other.

Next, as shown in FIG. 2B, when the protective film 5 on the surface is peeled off from the peripheral portion, the anisotropic conductive film 3 is left on the substrate 1.

Next, as shown in FIG. 2C, a bare IC 7 on which bumps 8 are formed in advance is mounted on the substrate 1 by a positioning device. Due to the adhesiveness of the anisotropic conductive film 3, the bare IC 7 comes into close contact with the anisotropic conductive film 3 in a positioned state. At this time, the bump 8 and the electrode pattern 2 are in a state via the anisotropic conductive film 3.

Thereafter, as shown in FIG.
By applying pressure to the substrate 1 while applying heat to C7,
The electrode pattern 2 on the substrate 1 and the bump 8 of the bare IC 7 come close to each other, and finally the two are connected. At the same time, the anisotropic conductive film 3 is cured, so that the mechanical strength is maintained while the electrode pattern 2 and the bump 8 remain electrically connected. Finally, the semiconductor device is completed by cutting out the substrate 1 for each bear IC 7.

In the semiconductor device according to the embodiment of the present invention, since the bonding pattern 4 is provided corresponding to the peripheral portion of the anisotropic conductive film 3, when the pressure bonding head 6 is pressed against the substrate 1, The anisotropic conductive film 3 sandwiched between the peripheral portion of the protective film 5 and the bonding pattern 4 is strongly suppressed. Therefore, the region where the bonding pattern 4 is formed has a higher bonding strength with the anisotropic conductive film 3 than other regions. Therefore, the protective film 5 shown in FIG.
Can be prevented from peeling off the peripheral portion of the anisotropic conductive film 3 which occurs due to insufficient adhesive force, which has been a problem in the step of peeling off from the peripheral portion.

Since the bonding pattern 4, which is the platform described here, is formed in the same process as the electrode pattern 2, it can be compared with the conventional semiconductor device manufacturing process.
There is no need to increase the number of processes.

[0022]

As described above, according to the semiconductor device of the present invention, the peripheral portion of the anisotropic conductive film does not peel off when the protective film is peeled off, thereby reducing the connection failure caused by this. be able to.

[Brief description of the drawings]

FIG. 1 is a plan view of a substrate used for a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a process sectional view illustrating the method for manufacturing the semiconductor device in the embodiment of the present invention.

FIG. 3 is a plan view of a substrate used in a conventional semiconductor device.

FIG. 4 is a process sectional view showing a conventional method for manufacturing a semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Electrode pattern 3 Anisotropic conductive film 4 Adhesion pattern 5 Protective film 6 Pressure bonding head 7 Bear IC 8 Bump

Claims (5)

[Claims] A substrate, an electrode formed on the substrate, a platform formed on the substrate, an anisotropic conductive film formed on the substrate, and an anisotropic conductive film formed on the substrate. A semiconductor element formed in the semiconductor device, wherein the platform is formed near the periphery of the anisotropic conductive film. 2. The semiconductor device according to claim 1, wherein the platform is made of the same material as the electrode and has the same thickness as the electrode. A step of forming an electrode and a step on the substrate; a step of bonding an anisotropic conductive film having a protective film to the substrate; a step of removing the protective film; Flip-chip mounting on the substrate via an anisotropic conductive film. 4. The method of manufacturing a semiconductor device according to claim 3, wherein the platform is made of the same material as the electrode, and the electrode and the platform are formed in the same step. 5. A method comprising: forming an electrode and a step on a substrate; bonding an anisotropic conductive film having a protective film to the substrate; and removing the protective film. Mounting method of the anisotropic conductive film.