JP2002190389A - Method and device for manufacturing organic el element - Google Patents

Method and device for manufacturing organic el element

Info

Publication number
JP2002190389A
JP2002190389A JP2000390428A JP2000390428A JP2002190389A JP 2002190389 A JP2002190389 A JP 2002190389A JP 2000390428 A JP2000390428 A JP 2000390428A JP 2000390428 A JP2000390428 A JP 2000390428A JP 2002190389 A JP2002190389 A JP 2002190389A
Authority
JP
Japan
Prior art keywords
organic
deposited
substrate
evaporation source
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000390428A
Other languages
Japanese (ja)
Inventor
Kazuo Ishii
和男 石井
Mahito Soeda
眞日止 副田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Chemical and Materials Co Ltd
Original Assignee
Nippon Steel Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Chemical Co Ltd filed Critical Nippon Steel Chemical Co Ltd
Priority to JP2000390428A priority Critical patent/JP2002190389A/en
Priority to TW090131529A priority patent/TW546394B/en
Priority to KR1020037007313A priority patent/KR100788152B1/en
Priority to PCT/JP2001/011192 priority patent/WO2002052903A1/en
Priority to CNB018210910A priority patent/CN100337340C/en
Publication of JP2002190389A publication Critical patent/JP2002190389A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/321Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method and a device which will not degrade element performance by preventing the alteration of a material deposited at a part, capable of mixed with an evaporation source under mechanical shock, or the like, and moreover to facilitate refinement of a material recovered for reuse. SOLUTION: Related to an organic EL thin-film vapor deposition, where an organic EL material 3 in an evaporation source 2 is gasified and then deposited on a film-forming substrate 4 for forming a thin-film, components, such as a chamber 1, shutters 5 and 6, or the like, other than the film-forming substrate 4, where the organic material 3 is deposited are inactive materials a the such that the organic material 3 will not deteriorate, related to a device for vapor-depositing organic EL element. The organic EL element vapor- depositing method uses this device.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は有機EL素子の製造
装置に関し、詳しくは有機EL素子用有機薄膜を真空蒸
着法で作成するために有機EL素子材料(有機EL材料
ともいう)を気化させて有機EL素子を製造するための
方法及び装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for manufacturing an organic EL device, and more particularly to a method for vaporizing an organic EL device material (also referred to as an organic EL material) in order to form an organic thin film for an organic EL device by a vacuum deposition method. The present invention relates to a method and an apparatus for manufacturing an organic EL device.

【0002】[0002]

【従来の技術】有機EL素子の一般的な構造としては、
透明導電膜からなる陽極と陰極との間に正孔輸送層、発
光層、電子輸送層等の有機薄膜層が形成されており、陰
極から正孔輸送層を介して発光層に注入された正孔と陰
極から電子輸送層を介して発光層に注入された電子とが
再結合する際に発光が生じる。このとき、材料中の不純
物や変質物によっては、それが共蒸着することによって
いわゆるダークスポットが発生し、表示装置にした際に
発色しない部分が出現する等の問題が生じる。
2. Description of the Related Art A general structure of an organic EL device is as follows.
An organic thin film layer such as a hole transport layer, a light emitting layer, and an electron transport layer is formed between an anode and a cathode made of a transparent conductive film, and the positive electrode injected into the light emitting layer from the cathode via the hole transport layer is formed. Light emission occurs when the holes and the electrons injected from the cathode into the light emitting layer via the electron transport layer are recombined. At this time, a so-called dark spot is generated by co-evaporation of an impurity or an alteration in the material, which causes a problem that a non-colored portion appears in a display device.

【0003】有機EL素子用有機薄膜作成方法の一つと
して真空蒸着法があることは、特開2000−6805
5号公報等で知られている。真空蒸着法では、有機EL
材料である蒸着材料の気化温度以上に加熱された蒸発源
から気化した蒸着材料が成膜用基板上で固体で堆積し薄
膜を形成する。この際、膜厚を均一化することが重要で
あるが、一般には、蒸発源からの蒸発量を安定化させて
から基板面に堆積させる方法が取られる。そのために、
蒸着装置内の蒸発源寄り及び基板寄りの一方又は両方
に、シャッターを設置し、蒸発源から気化する有機EL
材料の蒸発速度等をモニターしながら、蒸発量が安定し
たらシャッターを開けて基板面への蒸着を開始する操作
を行う。このシャッターは、基板を取り替えたり、蒸着
する有機EL材料を変更するタイミング等で再度蒸発源
や基板を覆うので、開閉によるショックにより蒸発源に
面したシャッター上に堆積した材料が蒸発源に落ち込む
可能性がある。
As one of the methods for preparing an organic thin film for an organic EL device, there is a vacuum deposition method disclosed in Japanese Patent Application Laid-Open No. 2000-6805.
No. 5 publication. In vacuum evaporation, organic EL
A vapor deposition material vaporized from an evaporation source heated to a temperature equal to or higher than the vaporization temperature of the vapor deposition material is deposited as a solid on a deposition substrate to form a thin film. At this time, it is important to make the film thickness uniform, but generally, a method of stabilizing the amount of evaporation from the evaporation source and then depositing it on the substrate surface is used. for that reason,
An organic EL which is provided with a shutter at one or both of an evaporation source side and a substrate side in a vapor deposition apparatus to vaporize from the evaporation source
When the evaporation amount is stabilized while monitoring the evaporation rate of the material, an operation of opening the shutter and starting vapor deposition on the substrate surface is performed. This shutter covers the evaporation source and the substrate again at the timing of changing the substrate or changing the organic EL material to be deposited, so that the material deposited on the shutter facing the evaporation source may fall into the evaporation source due to the shock due to opening and closing. There is.

【0004】膜厚を均一化する方法としては、蒸発源と
基板間の距離を長く取る方法も一般に併用される。通
常、有機EL素子用真空蒸着装置は、蒸発源にボートや
坩堝等の容器が用いられ、蒸発源から気化した有機EL
材料のガス状分子は蒸発源を頂点とした逆三角錐状を呈
するように広がりながら上昇して成膜用基板上に到達
し、堆積する。そして、逆三角錐の任意の断面では中心
部のガス状分子濃度が最も高く、半径方向に遠ざかるに
したがって濃度が低くなる。このガス状分子の半径方向
の濃度変化は蒸発源に近いほど、逆三角錐の中心部に近
いほど大きくなり、これらが遠いほど小さくなる。した
がって、基板上の膜厚分布は、逆三角錐状のガス状分子
の中心部が堆積する部分の厚みが厚く、周辺部が堆積す
る部分の厚みが薄くなる。そこで、蒸発源と基板間の距
離を長くすることで、基板面におけるガス状分子濃度を
極力平均化させたり、あるいは、逆三角錐状のガス状分
子相の周辺部のみを基板面に堆積させたりすることで膜
厚の均一化を図る等を行うことが多い。しかし、前者の
場合は、ガス状分子の広がり大きくなり、基板面以外の
装置内壁面等に相当量が析出する。また、後者の場合
は、装置が小型で済むという利点はあるが、最も濃度が
高い部分の逆三角錐の中心部分のガス状分子が基板面に
析出しないことになり、基板面以外の装置内壁面等に析
出するという問題がより大きくなる。
As a method of making the film thickness uniform, a method of increasing the distance between the evaporation source and the substrate is generally used together. Usually, a vacuum evaporation apparatus for an organic EL element uses a vessel such as a boat or a crucible as an evaporation source, and the organic EL vaporized from the evaporation source.
The gaseous molecules of the material spread and rise so as to exhibit an inverted triangular pyramid with the apex of the evaporation source, reach the deposition substrate, and are deposited. Then, in an arbitrary cross section of the inverted triangular pyramid, the concentration of gaseous molecules at the center is the highest, and the concentration decreases as the distance increases in the radial direction. The change in the concentration of gaseous molecules in the radial direction becomes larger as the position is closer to the evaporation source and closer to the center of the inverted triangular pyramid, and becomes smaller as they are further away. Therefore, in the film thickness distribution on the substrate, the thickness of the central portion of the gaseous molecules in the shape of an inverted triangular pyramid is large, and the thickness of the peripheral portion is small. Therefore, by increasing the distance between the evaporation source and the substrate, the concentration of gaseous molecules on the substrate surface can be averaged as much as possible, or only the periphery of the inverted triangular pyramidal gaseous molecular phase can be deposited on the substrate surface. In many cases, the thickness of the film is made uniform by performing the above method. However, in the former case, the spread of gaseous molecules becomes large, and a considerable amount of the gaseous molecules is deposited on the inner wall surface of the apparatus other than the substrate surface. In the latter case, there is an advantage that the device can be small in size, but gaseous molecules in the center of the inverted triangular pyramid at the highest concentration do not precipitate on the substrate surface. The problem of precipitation on wall surfaces and the like becomes more serious.

【0005】このように基板面以外に析出した有機EL
材料は、それが堆積すると蒸発源に落ち込み、共蒸着さ
れる可能性があるので、蒸発源に落ち込む可能性のある
装置内壁面やシャッター等の部品上に堆積した材料は変
質させないことが重要である。また、一般に蒸着する有
機EL材料は高価な有機化合物であるので、これを回収
し再生利用することが望まれている。そこで、基板以外
の装置内壁面等に析出した材料を回収し再生利用するた
めには、有機EL材料を変質させないことが重要であ
る。
The organic EL deposited on the surface other than the substrate as described above
As the material accumulates, it may fall into the evaporation source and be co-evaporated.Therefore, it is important that the material deposited on parts such as the inner wall of the device and shutters that may fall into the evaporation source should not be altered. is there. In general, the organic EL material to be vapor-deposited is an expensive organic compound. Therefore, it is desired to collect and reuse the organic EL material. Therefore, in order to collect and recycle materials deposited on the inner wall surface of the device other than the substrate, it is important that the organic EL materials are not deteriorated.

【0006】一般に有機EL素子用真空蒸着装置におい
ては、有機EL材料のガス状分子が析出する部分の材
質、例えば真空チャンバー本体を始め、チャンバー内に
設置されるシャッターやいわゆる防着板を含む付属物等
の部品の材質には、安価で加工性が良く防錆性に優れた
オーステナイト系ステンレス(SUSと略称されること
がある)が用いられる場合が多い。しかし、使用する有
機EL材料によっては、析出物の一部が変質又は汚染さ
れる。例えば、代表的な有機EL材料として知られてい
る8−ヒドロキシキノリンアルミニウム(Alq3と略
称されることがある)のような有機金属錯体化合物で
は、SUS板中の鉄と有機金属錯体中のアルミニウムが
金属交換反応を起こし、8―オキシキノリン鉄錯体を生
成することが起こり得る。この8―オキシキノリン鉄錯
体も気化する。また、有機EL材料が腐食性の場合や酸
化性の雰囲気を形成する場合は、鉄錆等を発生する。金
属元素を含まない有機EL材料で、腐食性ではない場合
においても、装置の運転と休止により温度変化が繰り返
し発生し、その結果、強固に付着した有機EL材料とSU
S金属板の熱膨張率の差により、SUS表面に磨耗が発生し
たり、更にはSUS金属と有機EL材料の接着表面に繰り
返し応力が発生し、SUS金属板表面のミクロな凸凹表面
組織が金属疲労を起こし、有機EL材料が金属表面から
剥がれるときに、金属表面のミクロな凸部の表面組織を
機械的に一緒に剥ぎ取る現象が起こり得る。この変質し
た有機EL材料が蒸発源に落ち込んで、再度気化して基
板に共蒸着すると素子性能が悪化する。また、回収有機
EL材料中に変質物があると、再生物が不純物に汚染さ
れ、それを用いて作成した素子の性能が低下したり、再
生利用するための精製が困難となる。
In general, in a vacuum deposition apparatus for an organic EL element, a material of a portion where gaseous molecules of an organic EL material are deposited, such as a vacuum chamber main body, a shutter provided in the chamber, and an accessory including a so-called anti-adhesion plate. Austenitic stainless steel (sometimes abbreviated as SUS), which is inexpensive, has good workability, and is excellent in rust prevention, is often used as the material of components such as objects. However, depending on the organic EL material used, part of the precipitate is altered or contaminated. For example, in an organometallic complex compound such as 8-hydroxyquinoline aluminum (which may be abbreviated as Alq3), which is known as a typical organic EL material, iron in the SUS plate and aluminum in the organometallic complex are combined. A metal exchange reaction may occur to form an 8-oxyquinoline iron complex. This 8-oxyquinoline iron complex also vaporizes. When the organic EL material is corrosive or forms an oxidizing atmosphere, iron rust or the like is generated. Even when the organic EL material does not contain a metal element and is not corrosive, temperature changes occur repeatedly due to the operation and suspension of the apparatus, and as a result, the strongly adhered organic EL material and SU
Due to the difference in the coefficient of thermal expansion of the S metal plate, abrasion occurs on the SUS surface, and repeated stress is generated on the bonding surface between the SUS metal and the organic EL material. When the organic EL material is peeled off from the metal surface due to fatigue, a phenomenon that the surface structure of the micro convex portion on the metal surface is mechanically peeled off together may occur. When the deteriorated organic EL material falls into the evaporation source and is vaporized again and co-deposited on the substrate, the element performance deteriorates. Further, if there is a degraded substance in the recovered organic EL material, the regenerated substance is contaminated with impurities, and the performance of an element produced using the substance is reduced, or purification for recycling is difficult.

【0007】[0007]

【発明が解決しようとする課題】本発明は、有機EL材
料の変質又は汚染を防止し、良好な品質の有機EL素子
を歩留まりよく生産することが可能な有機EL素子の製
造方法及びそれに使用される装置を提供することを目的
とする。
SUMMARY OF THE INVENTION The present invention is directed to a method of manufacturing an organic EL device capable of preventing deterioration or contamination of an organic EL material and producing good quality organic EL devices with good yield, and is used in the method. The purpose of the present invention is to provide a device that can be used.

【0008】[0008]

【課題を解決するための手段】本発明は、有機EL素子
用の有機材料を気化し、成膜用基板上で堆積させて薄膜
を形成する有機EL薄膜蒸着において、基板面以外の前
記有機材料が堆積する装置内壁面及び装置内部に設置さ
れた部品を前記有機材料に対して不活性な材質とし、有
機EL薄膜蒸着を行う有機EL素子の製造方法である。
また、本発明は、有機EL素子用の有機材料を気化し、
成膜用基板上で堆積させて薄膜を形成する有機EL薄膜
蒸着方法において、基板面以外の前記有機材料が堆積す
る装置内壁面及び装置内部に設置された部品を前記有機
材料に対して不活性な材質とし、該基板面以外に堆積す
る有機材料を回収、再使用する有機EL素子の製造方法
である。
According to the present invention, there is provided an organic EL thin film deposition method for forming a thin film by vaporizing an organic material for an organic EL device and depositing the organic material on a film forming substrate. This is a method for manufacturing an organic EL element in which an inner wall surface of an apparatus on which the substrate is deposited and a component installed inside the apparatus are made of a material inert to the organic material, and an organic EL thin film is deposited.
Further, the present invention vaporizes an organic material for an organic EL device,
In an organic EL thin film deposition method for forming a thin film by depositing a thin film on a film forming substrate, an inner wall surface of the apparatus on which the organic material is deposited other than the substrate surface and a component installed inside the apparatus are inert to the organic material. This is a method for manufacturing an organic EL element in which an organic material deposited on a surface other than the substrate surface is collected and reused.

【0009】更に、本発明は、有機EL素子用の有機材
料を気化し、成膜用基板上で堆積させて薄膜を形成する
有機EL薄膜蒸着において、基板面以外の前記有機材料
が堆積する装置内壁面及び装置内部に設置された部品を
前記有機材料に対して不活性な材質とした有機EL薄膜
蒸着用装置である。また、本発明は、前記部品がシャッ
ターである有機EL薄膜蒸着用装置である。更に、本発
明は、前記装置内壁面及び装置内部に設置された部品の
少なくとも表層面を、気化する有機材料に対して不活性
な材料とした有機EL薄膜蒸着用装置である。
Further, the present invention provides an apparatus for vapor-depositing an organic material for an organic EL element and depositing the organic material on a deposition substrate to form a thin film, wherein the organic material other than the substrate surface is deposited. This is an organic EL thin film deposition apparatus in which components installed on the inner wall surface and inside the apparatus are made inert with respect to the organic material. Further, the present invention is an organic EL thin film deposition apparatus in which the component is a shutter. Further, the present invention is an organic EL thin film deposition apparatus in which at least the surface layer of the inner wall surface of the device and the components installed inside the device are made of a material inert to an organic material to be vaporized.

【0010】[0010]

【発明の実施の形態】以下、本発明の有機EL薄膜蒸着
用装置及びそれを使用した蒸着方法について詳細に説明
する。図1は、本発明の装置の一例を示す断面模式図で
あり、図中、1はチャンバー、2は蒸発源、3は有機E
L材料、4は基板、5及び6はシャッターである。この
図面では、シャッター5は蒸発源寄りに設けられ、シャ
ッター6は基板寄りに設けられているが、どちらか一方
のみであることもできる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an organic EL thin film deposition apparatus and a deposition method using the same according to the present invention will be described in detail. FIG. 1 is a schematic sectional view showing an example of the apparatus of the present invention. In the figure, 1 is a chamber, 2 is an evaporation source, and 3 is an organic E.
L material, 4 is a substrate, and 5 and 6 are shutters. In this drawing, the shutter 5 is provided near the evaporation source, and the shutter 6 is provided near the substrate. However, only one of them may be used.

【0011】上記例における真空蒸着装置は、真空とす
ることができるチャンバー1と、チャンバー1内に配置
される坩堝等の蒸発源2、基板4を所定位置に保持する
ための保持手段(図示せず)、堆積させるタイミングを
実質的にコントロールするシャッター5及び6を部品と
して備えている。チャンバー1は、真空ポンプ等により
減圧可能とされている他、内部に装入される有機EL材
料や基板の出し入れが可能な構造とされている。そし
て、蒸発源2を加熱し、チャンバー1内を減圧にし、蒸
発源内部に装入された有機EL材料3を可及的に一定速
度で気化(蒸発又は昇華)させ、監視装置(図示せず)
で気化速度を監視又は制御し、気化速度が一定になった
らシャッター5及び6を開放したり又は気化速度により
シャッター5及び6の開放度を制御したりすることによ
り、基板4に付着する有機EL材料の付着速度又は量又
は厚みを制御する。
The vacuum deposition apparatus in the above-described example is a holding means (shown in the drawing) for holding a chamber 1 which can be evacuated, an evaporation source 2 such as a crucible disposed in the chamber 1, and a substrate 4 at predetermined positions. ) And shutters 5 and 6 for controlling the timing of deposition substantially. The chamber 1 is configured to be capable of being depressurized by a vacuum pump or the like, and has a structure capable of taking in and out an organic EL material and a substrate charged therein. Then, the evaporation source 2 is heated, the pressure in the chamber 1 is reduced, and the organic EL material 3 charged in the evaporation source is vaporized (evaporated or sublimated) at a constant speed as much as possible. )
The organic EL attached to the substrate 4 by monitoring or controlling the vaporization speed and opening the shutters 5 and 6 when the vaporization speed becomes constant or controlling the degree of opening of the shutters 5 and 6 according to the vaporization speed. Control the rate or amount or thickness of material deposition.

【0012】本例における真空蒸着装置では、蒸発源の
容器形状を坩堝様としているが、これに限定されるもの
ではない。また、蒸発源2は1個のみを記しているが、
複数個あることも可能である。なお、チャンバー1内に
配置され、有機EL材料が付着する位置にある部品とし
ては、図面を簡単にし、理解を容易にするためシャッタ
ー5及び6のみが図示されているが、通常はそれ以外の
部品を設置していることが多い。例えば、主にチャンバ
ー内壁へ析出した材料の掃除作業を軽減する目的で着脱
できるようになっている防着板を設置することがある。
この防着板は、薄いSUS板を曲げ、チャンバーの内壁に
沿ってチャンバー内に設置され、着脱をし易い用に分割
されて設置されることが多い。
In the vacuum evaporation apparatus of this embodiment, the shape of the evaporation source is crucible-shaped, but is not limited to this. Although only one evaporation source 2 is described,
There can be more than one. In addition, as components disposed in the chamber 1 and located at positions where the organic EL material adheres, only the shutters 5 and 6 are illustrated in order to simplify the drawing and to facilitate understanding, but usually other components are used. Many parts are installed. For example, an attachment-preventing plate that can be attached and detached in order to reduce the cleaning work of the material deposited mainly on the inner wall of the chamber may be installed.
This adhesion-preventing plate is formed by bending a thin SUS plate and installed in the chamber along the inner wall of the chamber, and is often divided and installed for easy attachment and detachment.

【0013】有機EL材料が発光層を形成する材料であ
る場合は、有機金属錯体が使用されることが多いが、高
温下で錯体金属が異種金属と接触すると、ある割合で金
属交換、すなわち変質が起こる。したがって、有機金属
錯体が析出する基板以外の材質は、有機金属錯体に対し
て不活性でないと、有機金属錯体が変質する。基板以外
に有機金属錯体が析出する部位としては、チャンバー1
の内壁、蒸発源に面したシャッター5及び6、そしてい
わゆる防着板等がある。チャンバー1やシャッター5、
6等の部品は、1種類の金属材料等の材質で構成されて
いても、2層以上の材料から構成されていても差し支え
なく、気化した有機EL材料が析出する少なくとも表層
部の材質を有機EL材料に対して不活性な材質とするこ
とがよい。また、チャンバー1の材質を不活性な材質と
する代わりに、いわゆる防着板を不活性な材質とするこ
とでもよい。
When the organic EL material is a material forming the light emitting layer, an organometallic complex is often used. However, when the complex metal comes in contact with a dissimilar metal at a high temperature, a certain percentage of metal exchange, that is, alteration occurs. Happens. Therefore, if the material other than the substrate on which the organometallic complex is deposited is not inert to the organometallic complex, the organometallic complex will deteriorate. The site where the organometallic complex is deposited besides the substrate is chamber 1
, The shutters 5 and 6 facing the evaporation source, and a so-called anti-adhesion plate. Chamber 1 and shutter 5,
The components such as 6 may be made of a material such as one kind of metal material, or may be made of two or more layers of materials. It is preferable to use a material that is inert to the EL material. Instead of using an inert material for the chamber 1, a so-called deposition-preventing plate may be used for the inert material.

【0014】本発明でいう不活性な材質とは、有機EL
材料と接触して、材質自身のみならず、有機EL材料に
対しても変質、分解及び材質の腐食による汚染等を生じ
させないものをいう。具体的には、チャンバー1等の材
質と有機EL材料とが接触することに起因して生じるも
のをいうが、その雰囲気に起因して材質が腐食、変質す
るものを含む。しかし、有機EL材料が単に熱分解する
ような場合を含む意味ではなく、それを促進し、雰囲気
中で現実に腐食、変質、汚染を生じさせるものに限る。
本発明で好適に使用される材質としては、金等の貴金属
類、フッ素樹脂、ポリイミド樹脂、シリコン樹脂等の耐
熱性樹脂類、石英ガラス、パイレックス(登録商標)、
硬質ガラス、琺瑯等のガラス類、アルミナ、窒化珪素、
磁器等のセラミックス類等の非金属材料等が挙げられ
る。これらの中から加工性やコスト等を考慮し、適宜選
択することができる。好適な不活性材質としては、金属
類、琺瑯等のガラス類、フッ素樹脂及びセラミックス類
が挙げられる。これらの内、強度を有さなかったり、成
形困難な材質や高価な材質は、薄膜蒸着やメッキ等の手
段で表層部のみを不活性な材質とすることが有利であ
る。
The inert material referred to in the present invention is an organic EL.
A substance that does not cause deterioration, decomposition and contamination due to corrosion of the material not only in the material itself, but also in the organic EL material in contact with the material. Specifically, it refers to a material generated due to contact between the material of the chamber 1 and the like and the organic EL material, but includes a material that is corroded and deteriorated due to the atmosphere. However, this does not include the case where the organic EL material is simply thermally decomposed, but is limited to a material that promotes the decomposition and actually causes corrosion, alteration, and contamination in the atmosphere.
Materials preferably used in the present invention include noble metals such as gold, fluorine resins, polyimide resins, heat-resistant resins such as silicone resins, quartz glass, Pyrex (registered trademark),
Hard glass, glass such as enamel, alumina, silicon nitride,
Non-metallic materials, such as ceramics, such as porcelain, etc. are mentioned. It can be appropriately selected from these in consideration of workability, cost, and the like. Suitable inert materials include metals, glasses such as enamel, fluororesins, and ceramics. Among these, it is advantageous to use a material having no strength, difficult to mold, or an expensive material in such a way that only the surface layer is made inert by means such as thin film deposition or plating.

【0015】また、有機金属錯体EL材料の場合は、上
記不活性材料の他、当該金属と金属交換反応を起こさな
い貴金属又は少なくとも当該金属と同じ金属材料を表面
に持つ材料も採用することができる。例えば、Alq3
の場合は、アルミニウム材料の他、表面をアルミニウム
クラッドした材質を使用することができる。
In the case of an organic metal complex EL material, in addition to the above inert material, a noble metal which does not cause a metal exchange reaction with the metal or a material having at least the same metal material as the metal on its surface can be used. . For example, Alq3
In this case, a material having a surface clad with aluminum can be used in addition to the aluminum material.

【0016】次に、本発明の装置を使用して蒸着する方
法について説明する。蒸発源2には、蒸着させる有機E
L材料3を所定量装入する。また、既にいくつかの層が
蒸着等により設けられていてもよい基板4が、蒸着させ
る面を蒸発源2側に向けてセットされる。基板4は蒸発
源2のほぼ真上に配置することが、蒸着速度の点で有利
であるが、シャッターの開閉時や基板の取替え時に、付
着堆積物が蒸発源2の中に落下する危険性があるが、本
発明の蒸着装置を使用すればこのような場合であって
も、堆積物の変質や汚染がないので、それによる問題が
解決される。
Next, a method for vapor deposition using the apparatus of the present invention will be described. The evaporation source 2 includes organic E to be deposited.
A predetermined amount of the L material 3 is charged. The substrate 4 on which some layers have already been provided by evaporation or the like is set with the surface to be evaporated facing the evaporation source 2 side. It is advantageous in terms of deposition rate that the substrate 4 is disposed almost directly above the evaporation source 2, but there is a risk that the deposits fall into the evaporation source 2 when the shutter is opened and closed or when the substrate is replaced. However, if the vapor deposition apparatus of the present invention is used, even in such a case, there is no alteration or contamination of the deposit, so that the problem caused by the alteration can be solved.

【0017】その後、減圧と加熱が行われ、気化が開始
する。蒸発源2及びその周囲の蒸発部温度は有機EL材
料3の所定の蒸気圧が得られる温度であればよい。通
常、この蒸気圧は数Torrから10-8Torr程度である。気
化開始直後は、気化速度が安定しないのでシャッターは
蒸発源又は基板を覆っている。気化速度を膜厚センサー
等によりモニターし、気化速度が安定したら蒸発源又は
基板を覆っているシャッター5及び6を開けて基板への
蒸着が開始する。その他の蒸着条件は公知の方法が採用
でき、本発明は上記図面又は下記実施例に記載された装
置及び運転条件には限定されない。また、有機EL材料
はAlq3等の金属錯体に限られるものではなく、有機
EL素子の製作に使用される有機EL材料の全てに適用
可能である。
Thereafter, pressure reduction and heating are performed, and vaporization starts. The temperature of the evaporation source 2 and the surrounding evaporating section may be a temperature at which a predetermined vapor pressure of the organic EL material 3 can be obtained. Usually, this vapor pressure is on the order of several Torr to 10 -8 Torr. Immediately after the start of vaporization, the shutter covers the evaporation source or the substrate because the vaporization rate is not stable. The vaporization rate is monitored by a film thickness sensor or the like. When the vaporization rate is stabilized, the evaporation source or the shutters 5 and 6 covering the substrate are opened to start vapor deposition on the substrate. Other deposition conditions can employ a known method, and the present invention is not limited to the apparatus and operating conditions described in the above drawings or the following examples. Further, the organic EL material is not limited to a metal complex such as Alq3, but can be applied to all organic EL materials used for manufacturing organic EL elements.

【0018】[0018]

【実施例】以下、実施例に基づき、本発明の具体例を説
明する。 比較例1 特注品の高純度8−ヒドロキシキノリンアルミニウム
(Alq3)を、図1に示す蒸着装置を使用して基板上に蒸
着した。シャッター5及び6の材質はSUS304とし
た。蒸着終了後に蒸発源寄りの蒸発源に面したシャッタ
ー5に堆積したAlq3を回収し、これを分析したとこ
ろ鉄及びクロムが検出された。これは、Alq3と金属
交換した錯体と推定された。次に、上記回収Alq3を
集め、これを発光層兼電子輸送層とし、前記と同様の装
置を使用して、ITO膜が既に形成されているガラス基
板のITO透明電極上にN,N'-ジ-(ナフタレン-1-イ
ル)-N,N'-ジフェニル-ベンジジン(以下、NPBと
いう)を正孔輸送層とし、続いて該Alq3、続いてア
ルミニウム−リチウムを陰極を有する積層素子を作成し
た。なお、有機材料の厚みははともに50nmとし、電
極はITO、アルミニウム−リチウムともに200nm
とした。封止直後にこの素子を蛍光顕微鏡で観察したと
ころ、1000μm角当たり数個のダークスポットが確
認された。 実施例1 シャッターに溶融アルミメッキを施し、それ以外は比較
例1と同一条件でAlq3を蒸着した。蒸着終了後に蒸
発源寄りの蒸発源に面したシャッター5に堆積したAl
q3には、金属交換を起こした錯体は検出されなかっ
た。この堆積物を集め、このものを発光層兼電子輸送層
とし、NPBを正孔輸送層とする比較例1に記載と同様
の積層素子を比較例1と同一条件で作成した。封止直後
にこの素子を蛍光顕微鏡で観察したところ、ダークスポ
ットの数は大幅に減少した。
EXAMPLES Hereinafter, specific examples of the present invention will be described based on examples. Comparative Example 1 A custom-made high-purity 8-hydroxyquinoline aluminum (Alq3) was deposited on a substrate by using the deposition apparatus shown in FIG. The material of the shutters 5 and 6 was SUS304. After the deposition was completed, Alq3 deposited on the shutter 5 facing the evaporation source close to the evaporation source was recovered and analyzed. As a result, iron and chromium were detected. This was presumed to be a complex metal-exchanged with Alq3. Next, the collected Alq3 was collected and used as a light emitting layer and an electron transporting layer. Using the same apparatus as above, N, N'- was deposited on the ITO transparent electrode of the glass substrate on which the ITO film had already been formed. A stacked device having di- (naphthalen-1-yl) -N, N'-diphenyl-benzidine (hereinafter referred to as NPB) as a hole transport layer, followed by the Alq3, and then aluminum-lithium as a cathode was prepared. . The thickness of the organic material was set to 50 nm, and the electrodes were made of 200 nm for both ITO and aluminum-lithium.
And Observation of this device with a fluorescence microscope immediately after sealing revealed several dark spots per 1000 μm square. Example 1 A shutter was subjected to hot-dip aluminum plating, and Alq3 was deposited under the same conditions as in Comparative Example 1 except for that. Al deposited on the shutter 5 facing the evaporation source near the evaporation source after the end of the evaporation
No complex that had undergone metal exchange was detected in q3. This deposit was collected, and this was used as a light emitting layer and an electron transport layer, and a laminated device similar to that described in Comparative Example 1 was prepared under the same conditions as Comparative Example 1 using NPB as a hole transport layer. Observation of this device with a fluorescence microscope immediately after sealing revealed that the number of dark spots was significantly reduced.

【0019】[0019]

【発明の効果】以上のように本発明によれば、機械的シ
ョック等により蒸発源に混入し得る部位に析出する材料
の変質を防止することで素子性能を悪化させず、しかも
再生使用を目的に回収する材料の精製も容易になる。
As described above, according to the present invention, it is possible to prevent deterioration of element performance by preventing deterioration of a material deposited at a portion which can be mixed into an evaporation source due to a mechanical shock or the like, and furthermore, it is intended to be used for recycling. Purification of the material to be recovered is also facilitated.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 有機EL素子蒸着用装置の断面模式図FIG. 1 is a schematic sectional view of an apparatus for vapor deposition of an organic EL element.

【符号の説明】 1 チャンバー 2 蒸発源 3 有機EL材料 4 基板 5、6 シャッター[Description of Signs] 1 chamber 2 evaporation source 3 organic EL material 4 substrate 5, 6 shutter

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 3K007 AB17 AB18 DA01 DB03 EB00 FA01 4K029 BA62 BC07 BD00 DA01 DA09 DA10 DA12  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3K007 AB17 AB18 DA01 DB03 EB00 FA01 4K029 BA62 BC07 BD00 DA01 DA09 DA10 DA12

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 有機EL素子用の有機材料を気化し、成
膜用基板上で堆積させて薄膜を形成する有機EL薄膜蒸
着において、基板面以外で前記有機材料が堆積する装置
内壁面及び装置内部に設置された部品を前記有機材料に
対して不活性な材質とし、有機EL薄膜蒸着を行うこと
を特徴とする有機EL素子の製造方法。
In an organic EL thin film deposition for forming a thin film by vaporizing an organic material for an organic EL element and depositing the organic material on a film forming substrate, an inner wall surface and an apparatus on which the organic material is deposited other than on the substrate surface A method for manufacturing an organic EL device, wherein a component installed inside is made of a material inert to the organic material, and an organic EL thin film is deposited.
【請求項2】 有機EL素子用の有機材料を気化し、成
膜用基板上で堆積させて薄膜を形成する有機EL薄膜蒸
着方法において、基板面以外で前記有機材料が堆積する
装置内壁面及び装置内部に設置された部品を前記有機材
料に対して不活性な材質とし、該基板面以外に堆積する
有機材料を回収、再使用することを特徴とする有機EL
素子の製造方法。
2. An organic EL thin film deposition method for forming a thin film by vaporizing an organic material for an organic EL element and depositing the organic material on a film forming substrate, wherein an inner wall surface of the apparatus on which the organic material is deposited other than on a substrate surface; An organic EL, wherein components installed inside the apparatus are made inert with respect to the organic material, and the organic material deposited other than on the substrate surface is collected and reused.
Device manufacturing method.
【請求項3】 有機EL素子用の有機材料を気化し、成
膜用基板上で堆積させて薄膜を形成する有機EL薄膜蒸
着において、基板面以外で前記有機材料が堆積する装置
内壁面及び装置内部に設置された部品を前記有機材料に
対して不活性な材質としたことを特徴とする有機EL薄
膜蒸着用装置。
3. An organic EL thin film deposition method for vaporizing an organic material for an organic EL element and depositing the organic material on a film forming substrate to form a thin film. An apparatus for vapor-depositing an organic EL thin film, wherein a component installed inside is made of a material inert to the organic material.
【請求項4】 部品がシャッターである請求項3記載の
有機EL薄膜蒸着用装置。
4. The apparatus according to claim 3, wherein the component is a shutter.
【請求項5】 前記有機材料が堆積する装置内壁面及び
装置内部に設置された部品の少なくとも表層面を、気化
する有機材料に対して不活性な材料としたことを特徴と
する請求項3記載の有機EL薄膜蒸着用装置。
5. The apparatus according to claim 3, wherein at least the surface of the inner wall of the device on which the organic material is deposited and at least the surface of a component installed inside the device are made of a material inert to the vaporized organic material. For organic EL thin film deposition.
JP2000390428A 2000-12-22 2000-12-22 Method and device for manufacturing organic el element Pending JP2002190389A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000390428A JP2002190389A (en) 2000-12-22 2000-12-22 Method and device for manufacturing organic el element
TW090131529A TW546394B (en) 2000-12-22 2001-12-19 Production method and device for organic EL element
KR1020037007313A KR100788152B1 (en) 2000-12-22 2001-12-20 Production method and device for organic EL element
PCT/JP2001/011192 WO2002052903A1 (en) 2000-12-22 2001-12-20 Production method and device for organic el element
CNB018210910A CN100337340C (en) 2000-12-22 2001-12-20 Production method and device for organic el element

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Application Number Priority Date Filing Date Title
JP2000390428A JP2002190389A (en) 2000-12-22 2000-12-22 Method and device for manufacturing organic el element

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JP2002190389A true JP2002190389A (en) 2002-07-05

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CN (1) CN100337340C (en)
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US8668157B2 (en) 2010-12-23 2014-03-11 Sharp Kabushiki Kaisha Method of recovering film-forming material
US9365927B2 (en) 2010-12-27 2016-06-14 Sharp Kabushiki Kaisha Deposition method and collection method

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JP2005149924A (en) * 2003-11-17 2005-06-09 Toray Ind Inc Vapor deposition device, method for recovering and reusing vapor deposition material, and method for manufacturing organic electroluminescent device
US8668157B2 (en) 2010-12-23 2014-03-11 Sharp Kabushiki Kaisha Method of recovering film-forming material
WO2012090772A1 (en) * 2010-12-27 2012-07-05 シャープ株式会社 Deposition device, cutting tool, and method for collecting vapor deposition material
US9365927B2 (en) 2010-12-27 2016-06-14 Sharp Kabushiki Kaisha Deposition method and collection method

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Publication number Publication date
CN100337340C (en) 2007-09-12
KR20030072553A (en) 2003-09-15
KR100788152B1 (en) 2007-12-21
WO2002052903A1 (en) 2002-07-04
TW546394B (en) 2003-08-11
CN1483300A (en) 2004-03-17

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