JP2002184959A - Transfer method of functional device and functional panel - Google Patents

Transfer method of functional device and functional panel

Info

Publication number
JP2002184959A
JP2002184959A JP2000381781A JP2000381781A JP2002184959A JP 2002184959 A JP2002184959 A JP 2002184959A JP 2000381781 A JP2000381781 A JP 2000381781A JP 2000381781 A JP2000381781 A JP 2000381781A JP 2002184959 A JP2002184959 A JP 2002184959A
Authority
JP
Japan
Prior art keywords
substrate
functional element
layer
panel
functional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000381781A
Other languages
Japanese (ja)
Other versions
JP3974749B2 (en
Inventor
Junichi Tanaka
潤一 田中
Akitsugu Hatano
晃継 波多野
Toshio Takemoto
敏夫 竹本
Yasunori Nishimura
靖紀 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
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Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2000381781A priority Critical patent/JP3974749B2/en
Publication of JP2002184959A publication Critical patent/JP2002184959A/en
Application granted granted Critical
Publication of JP3974749B2 publication Critical patent/JP3974749B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a transfer method of a functional device which can select a substrate for forming the functional device and a substrate used when the functional device is applied to an actual product individually and to provide a functional panel. SOLUTION: A barrier layer 2 made of tantalum oxide and a functional device layer 3 made of TFT are formed on a glass substrate 1 to form a functional device substrate. The surface of the functional device layer 3 is coated with a resin by spin-coating, and then the resin is cured to form a protective layer 4. The glass substrate 1 is etched from its rear surface with an etchant comprising a solution of fluoric acid to remove the glass substrate 1 and a thin layer functional device substrate comprising the barrier layer 2 and the functional device layer 3 is obtained. A transfer element 6 made of organic polymer is bonded to the barrier layer 2 of the thin layer functional device substrate with an adhesive layer 5 and the functional device layer 3 is transferred from the glass substrate 1 to the transfer element 6.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、薄膜トランジスタ
(TFT)などの機能素子を有機高分子などの基板に転
写する機能素子の転写方法およびそれを用いて製造した
機能性パネルに関する。
The present invention relates to a method for transferring a functional element such as a thin film transistor (TFT) to a substrate such as an organic polymer and a functional panel manufactured using the method.

【0002】[0002]

【従来の技術】機能素子としてTFTを用いて液晶ディ
スプレイなどを製造する場合、CVD(Chemical Vapor
Deposition)法などによってガラスなどの透明基板上
にTFTを形成する。TFTを基板上に形成する工程は
高温処理を伴うため、軟化点および融点が高く耐熱性に
優れる材料を基板に用いる必要がある。そのため、基板
として現状では500℃前後の耐熱性を有する耐熱ガラ
スが使用されている。
2. Description of the Related Art When manufacturing a liquid crystal display or the like using a TFT as a functional element, a CVD (Chemical Vapor
A TFT is formed on a transparent substrate such as glass by a Deposition method or the like. Since a process of forming a TFT on a substrate involves high-temperature treatment, a material having a high softening point and a high melting point and having excellent heat resistance needs to be used for the substrate. Therefore, a heat-resistant glass having a heat resistance of about 500 ° C. is currently used as the substrate.

【0003】[0003]

【発明が解決しようとする課題】上述のように、機能素
子が形成される基板には、機能素子基板を製造するため
の条件を満たすものが使用される。しかし、機能素子の
形成時に適する基板が、製品化後に有効な特性を必ずし
も有しない場合がある。
As described above, the substrate on which the functional element is formed is one that satisfies the conditions for manufacturing the functional element substrate. However, a substrate suitable for forming a functional element may not necessarily have effective characteristics after commercialization.

【0004】たとえばガラス基板は、機能素子であるT
FTを用いた液晶ディスプレイを製造する場合に適した
基板であるが、その反面、ガラス基板は重く、割れやす
く、また、変形に弱いという性質を有している。現在需
要が急増している携帯電話や携帯端末などの携帯用電子
機器製品に用いられる液晶ディスプレイでは、安価で軽
く、変形に耐え、落下に対しても破損しない基板が必要
である。ところが、このような基板は製造工程で必要な
耐熱性を有さず、また搬送の際の基板の反りが大きいな
どの問題がある。すなわち、製造条件から基板に求めら
れる特性と、製品化後の基板に求められる特性との間に
隔たりがあり、両者の条件および特性を同時に満足させ
る基板の選択はきわめて困難である。
[0004] For example, a glass substrate is a functional element T
Although it is a substrate suitable for manufacturing a liquid crystal display using FT, a glass substrate is heavy, is easily broken, and is susceptible to deformation. Liquid crystal displays used in portable electronic devices such as mobile phones and portable terminals, for which demand is rapidly increasing, require substrates that are inexpensive, light, resistant to deformation, and not damaged by falling. However, such a substrate has problems that it does not have the heat resistance required in the manufacturing process and that the substrate is greatly warped during transportation. That is, there is a gap between the characteristics required for the substrate from the manufacturing conditions and the characteristics required for the substrate after commercialization, and it is extremely difficult to select a substrate that satisfies both conditions and characteristics simultaneously.

【0005】この問題を解決するため、特開平10−1
25931号公報記載の薄膜素子の転写方法では、機能
素子である薄膜素子と製造時に使用する基板との間に分
離層を形成し、基板側からレーザ光を照射し、分離層で
剥離を生じさせ、薄膜素子の製造時に使用する基板から
剥離させた後、製品で使用される基板に転写すること
で、製造時と製品とで使用される基板を選択することを
可能にしている。しかしながら、上述のように分離層に
レーザ光を吸収させることで薄膜素子と基板とを剥離さ
せる場合、分離層で熱が発生することによって薄膜素子
が加熱され、素子の性能が低下するという問題が生じ
る。
In order to solve this problem, Japanese Patent Laid-Open Publication No. 10-1
In the method of transferring a thin film element described in Japanese Patent No. 25931, a separation layer is formed between a thin film element that is a functional element and a substrate used during manufacturing, and a laser beam is irradiated from the substrate side to cause separation in the separation layer. By peeling off from a substrate used in manufacturing a thin film element and transferring it to a substrate used in a product, it is possible to select a substrate used in manufacturing and in a product. However, when the thin film element and the substrate are separated from each other by absorbing the laser beam into the separation layer as described above, there is a problem that the thin film element is heated by the heat generated in the separation layer, and the performance of the element is reduced. Occurs.

【0006】本発明の目的は、機能素子の性能を低下さ
せることなく、機能素子を形成する基板と製品として使
用する際に用いる基板とを個別に選択することを可能に
する機能素子の転写方法および機能パネルを提供するこ
とである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a method for transferring a functional element, which makes it possible to individually select a substrate on which the functional element is formed and a substrate to be used as a product without deteriorating the performance of the functional element. And to provide a functional panel.

【0007】[0007]

【課題を解決するための手段】本発明は、基板の表面に
機能素子を形成して機能素子基板を形成する基板形成工
程と、前記基板の裏面から基板の厚みを減少または除去
させることで前記機能素子基板を薄層化する薄層化工程
と、前記薄層化した機能素子基板を転写体に転写する転
写工程とを有することを特徴とする機能素子の転写方法
である。
According to the present invention, there is provided a substrate forming step of forming a functional element substrate by forming a functional element on a surface of a substrate, and reducing or removing a thickness of the substrate from a back surface of the substrate. A method of transferring a functional element, comprising: a thinning step of thinning a functional element substrate; and a transfer step of transferring the thinned functional element substrate to a transfer body.

【0008】本発明に従えば、基板の裏面から基板の厚
みを減少または除去させることで機能素子基板を薄層化
し、薄層化した機能素子基板を転写体に転写するので、
機能素子の性能を低下させることなく、機能素子を形成
する基板と製品として使用する際に用いる基板とを個別
に選択することが可能となる。これによって、温度制限
が必要な基板上にも、特性の良好な高温プロセスで機能
素子を形成でき、自由な機能素子基板が形成可能とな
る。
According to the present invention, the functional element substrate is thinned by reducing or removing the thickness of the substrate from the back surface of the substrate, and the thinned functional element substrate is transferred to a transfer body.
It is possible to individually select a substrate on which a functional element is formed and a substrate used when used as a product without deteriorating the performance of the functional element. As a result, a functional element can be formed on a substrate requiring a temperature limit by a high-temperature process with good characteristics, and a free functional element substrate can be formed.

【0009】また本発明は、前記機能素子の表面に、機
能素子を保護する保護層を形成することを特徴とする。
Further, the present invention is characterized in that a protective layer for protecting the functional element is formed on the surface of the functional element.

【0010】本発明に従えば、機能素子の表面に薄層化
工程で機能素子を保護する保護層を形成するので、基板
を薄層化する際に機能素子がダメージを受けることを防
ぐことができる。
According to the present invention, since the protective layer for protecting the functional element is formed on the surface of the functional element in the thinning step, it is possible to prevent the functional element from being damaged when the substrate is thinned. it can.

【0011】また本発明は、2枚の基板の少なくとも一
方の表面に機能素子を形成して第1基板および第2基板
を形成するする基板形成工程と、機能素子が内側となる
ように第1基板と第2基板とを貼り合わせてパネルを形
成するパネル形成工程と、前記パネルの両面から基板の
厚さを減少または除去させることで第1基板および第2
基板を薄層化する薄層化工程と、前記薄層化した第1基
板および第2基板を転写体に転写する転写工程とを有す
ることを特徴とする機能素子の転写方法である。
Further, the present invention provides a substrate forming step of forming a functional element on at least one surface of two substrates to form a first substrate and a second substrate; A panel forming step of bonding a substrate and a second substrate to form a panel, and reducing or removing a thickness of the substrate from both sides of the panel to form a first substrate and a second substrate.
A method for transferring a functional element, comprising: a thinning step of thinning a substrate; and a transferring step of transferring the thinned first substrate and second substrate to a transfer body.

【0012】本発明に従えば、機能素子が内側となるよ
うに第1基板と第2基板とを貼り合わせてパネルを形成
し、パネルの両面から基板の厚さを減少または除去させ
て薄層化した第1基板および第2基板を転写体に転写す
るので、機能素子の表面を保護しなくても、基板を薄層
化することが可能となりプロセスを簡略化することがで
きる。
According to the present invention, a panel is formed by bonding a first substrate and a second substrate such that a functional element is on the inside, and the thickness of the substrate is reduced or removed from both sides of the panel to form a thin layer. Since the first substrate and the second substrate are transferred to the transfer member, the substrate can be thinned without protecting the surface of the functional element, and the process can be simplified.

【0013】また本発明は、前記転写工程で、一方の基
板には転写体を転写し、他方の基板にはコーティングす
ることを特徴とする。
Further, the present invention is characterized in that, in the transfer step, a transfer body is transferred to one substrate, and the other substrate is coated.

【0014】本発明に従えば、転写工程で、一方の基板
には転写体を転写し、他方の基板にはコーティングする
ので、パネルを薄型化することができる。
According to the present invention, in the transfer step, the transfer body is transferred to one substrate and the other substrate is coated, so that the panel can be thinned.

【0015】また本発明は、前記機能素子と基板との間
に、機能素子を保護するバリア層を形成することを特徴
とする。
Further, the present invention is characterized in that a barrier layer for protecting the functional element is formed between the functional element and the substrate.

【0016】本発明に従えば、機能素子と基板との間に
薄層化工程で機能素子を保護するバリア層を形成するの
で、機能素子にダメージを与えることなく、基板の除去
が可能となり、転写後の機能素子基板を軽量化すること
ができる。
According to the present invention, since the barrier layer for protecting the functional element is formed between the functional element and the substrate in the thinning step, the substrate can be removed without damaging the functional element. The functional element substrate after transfer can be reduced in weight.

【0017】また本発明は、前記バリア層は、金属の酸
化物から成ることを特徴とする。本発明に従えば、バリ
ア層は、金属の酸化物から成るので、基板を薄層化する
際に高い耐性を有し、機能素子がダメージを受けること
を防ぐことができる。
Further, the present invention is characterized in that the barrier layer is made of a metal oxide. According to the present invention, since the barrier layer is made of a metal oxide, the barrier layer has high resistance when the substrate is thinned, and can prevent the functional element from being damaged.

【0018】また本発明は、前記基板は、ガラスから成
ることを特徴とする。本発明に従えば、基板はガラスか
ら成るので、薄層化の条件を制御することでガラス基板
の一部を残存し、バリア層を形成しなくても、基板の薄
層化が可能である。
Further, the present invention is characterized in that the substrate is made of glass. According to the present invention, since the substrate is made of glass, a part of the glass substrate can be left by controlling the conditions for thinning, and the substrate can be thinned without forming a barrier layer. .

【0019】また本発明は、前記転写体は、有機高分子
から成ることを特徴とする。本発明に従えば、転写体は
有機高分子から成るので、機能素子基板がフレキシブル
となり、様々な応用が可能となる。
Further, the present invention is characterized in that the transfer member is made of an organic polymer. According to the present invention, since the transfer body is made of an organic polymer, the functional element substrate becomes flexible, and various applications are possible.

【0020】また本発明は、前記請求項1〜8のいずれ
かに記載の機能素子の転写方法を用いて製造されたこと
を特徴とする機能性パネルである。
The present invention also provides a functional panel manufactured by using the method for transferring a functional element according to any one of claims 1 to 8.

【0021】本発明に従えば、機能性パネルが、前記の
機能素子の転写方法を用いて製造されるので、様々な機
能を有する機能性パネルが容易に得られる。
According to the present invention, since the functional panel is manufactured by using the above-described method for transferring a functional element, functional panels having various functions can be easily obtained.

【0022】[0022]

【発明の実施の形態】以下、本発明に係わる機能性パネ
ルの実施の形態について、図面に基づいて説明する。
Embodiments of a functional panel according to the present invention will be described below with reference to the drawings.

【0023】図1は、本発明の第1の実施形態である機
能素子の転写方法の工程図である。まず、ガラスから成
る基板1上にタンタルの薄膜(膜厚2000Å)をスパ
ッタ法で形成する。このタンタルを酒石酸アンモニウム
水溶液中で陽極酸化して酸化タンタルにし、バリア層
(膜厚300Å)2とする。その上にゲート電極配線
(膜厚1800Å)、ゲート絶縁層(膜厚300Å)形
成、アモルファスシリコンの半導体層(膜厚500Å)
形成、アルミニウムによるソース電極配線(膜厚300
0Å)形成を順次行いTFTからなる機能素子層3を形
成して機能素子基板を形成する(a)。また、バリア層
2としてはタンタル以外にもたとえばチタンおよびタン
グステンなどの金属の酸化物を用いてもよく、何層か積
層して用いる、あるいは、複数の金属の酸化物を組合わ
せてもよい。
FIG. 1 is a process chart of a method for transferring a functional element according to a first embodiment of the present invention. First, a tantalum thin film (thickness: 2000 Å) is formed on a glass substrate 1 by a sputtering method. This tantalum is anodized in an aqueous solution of ammonium tartrate to form tantalum oxide, thereby forming a barrier layer (thickness: 300 °). A gate electrode wiring (thickness 1800 Å) and a gate insulating layer (thickness 300 形成) are formed thereon, and an amorphous silicon semiconductor layer (thickness 500 Å).
Formation, aluminum source electrode wiring (thickness 300)
0Å) The formation is sequentially performed to form a functional element layer 3 composed of a TFT to form a functional element substrate (a). In addition, as the barrier layer 2, other than tantalum, for example, an oxide of a metal such as titanium and tungsten may be used, a plurality of layers may be used, or a combination of a plurality of metal oxides may be used.

【0024】薄層化工程で機能素子層3をエッチングか
ら保護するために、機能素子層3の表面に樹脂をスピン
コートした後硬化させ保護層4を形成する(b)。その
後、フッ酸の水溶液から成るエッチング液を用いてガラ
ス基板1の厚みを減少させるためにガラス基板1の裏面
からエッチングを行う。酸化タンタルで構成されたバリ
ア層2は上述のエッチング液に溶解しないため、ガラス
基板1が除去されてバリア層2および機能素子層3から
なる薄層化された機能素子基板が得られる(c)。
In order to protect the functional element layer 3 from etching in the thinning step, a resin is spin-coated on the surface of the functional element layer 3 and then cured to form a protective layer 4 (b). Thereafter, etching is performed from the back surface of the glass substrate 1 using an etching solution composed of an aqueous solution of hydrofluoric acid in order to reduce the thickness of the glass substrate 1. Since the barrier layer 2 made of tantalum oxide does not dissolve in the above-described etching solution, the glass substrate 1 is removed, and a thin functional element substrate including the barrier layer 2 and the functional element layer 3 is obtained (c). .

【0025】ガラス基板1の厚みを減少させる手法とし
ては、上記の方法以外にも、機械的に基板を研磨して削
り取る方法、機械研磨とエッチングとを併用して化学的
および機械的に基板を研磨する方法(CMP法)および
ブラスト処理による基板を削り取る方法などが適用でき
る。次に、純水でリンスし乾燥した後、薄層化した機能
素子基板のバリア層2と有機高分子から成る転写体6と
を接着用の樹脂からなる接着層5を介して貼合わせる
(d)。ガラス基板1をエッチングした後の機能素子基
板は薄いので、静電吸着により別のガラス基板上に載
せ、支えを形成した後、転写体6に転写する。ここで有
機高分子としてはポリエーテルスルホンを用いる。最後
に保護層4を剥離剤を用いて取り除く(e)。以上のよ
うに、機能素子層3をガラス基板1から転写体6に転写
することができる。このようにして、軽く、変形に耐
え、落下しても破損しにくい転写基板7が得られる。
As a method of reducing the thickness of the glass substrate 1, in addition to the above method, a method of mechanically polishing and shaving the substrate, and a method of chemically and mechanically polishing the substrate by using both mechanical polishing and etching. A method of polishing (CMP method), a method of scraping a substrate by blasting, and the like can be applied. Next, after rinsing with pure water and drying, the thinned barrier layer 2 of the functional element substrate and the transfer body 6 made of an organic polymer are adhered via the adhesive layer 5 made of an adhesive resin (d). ). Since the functional element substrate after etching the glass substrate 1 is thin, the functional element substrate is mounted on another glass substrate by electrostatic attraction to form a support, and then transferred to the transfer body 6. Here, polyether sulfone is used as the organic polymer. Finally, the protective layer 4 is removed using a release agent (e). As described above, the functional element layer 3 can be transferred from the glass substrate 1 to the transfer body 6. In this manner, the transfer substrate 7 that is light, resists deformation, and is not easily damaged when dropped can be obtained.

【0026】図2は、本発明の第2の実施形態である機
能素子の転写方法の工程図である。本実施形態では、第
1の実施形態とは異なり、バリア層2を設けず、ガラス
基板1上にTFTからなる機能素子層3を形成する
(a)。機能素子層3の表面に保護層4を形成し
(b)、エッチング速度をエッチング液の温度、濃度お
よび撹拌方法などを厳密に管理することにより制御し、
ガラス基板1の厚みを均一に薄くしてガラス薄板8を形
成する(c)。有機高分子からなる転写体6とガラス薄
板8とを接着層5を介して接着し、保護層4を除去する
(d)。このようにして、軽く、変形に耐え、落下して
も破損しにくい転写基板9が得られる。
FIG. 2 is a process chart of a method for transferring a functional element according to a second embodiment of the present invention. In the present embodiment, unlike the first embodiment, a functional element layer 3 made of a TFT is formed on a glass substrate 1 without providing a barrier layer 2 (a). Forming a protective layer 4 on the surface of the functional element layer 3 (b), and controlling the etching rate by strictly controlling the temperature, concentration, stirring method and the like of the etching solution;
The glass substrate 1 is uniformly thinned to form a glass thin plate 8 (c). The transfer body 6 made of an organic polymer and the glass thin plate 8 are adhered via the adhesive layer 5, and the protective layer 4 is removed (d). In this manner, the transfer substrate 9 that is light, resists deformation, and is not easily damaged when dropped is obtained.

【0027】図3は、本発明の第3の実施形態である機
能素子の転写方法の工程図である。まず、ガラスからな
る基板1上にタンタルの薄膜をスパッタ法で形成する。
このタンタルを陽極酸化して酸化タンタルとしバリア層
2を形成する。その上にゲート電極配線、ゲート絶縁層
形成、アモルファスシリコンの半導体層形成、ソース電
極配線などを順次行いTFTからなる機能素子層3を形
成する。このようにして第1の基板であるTFT基板1
0が得られる。また、同様にしてバリア層12を形成
し、その上に、カラーフィルタ層13を形成して第2の
基板であるカラーフィルタ基板20が得られる(a)。
TFT基板10とカラーフィルタ基板20との間隔が5
μmになるように基板間にプラスチックのビーズを散布
し、機能素子層3およびカラーフィルタ層13が内側と
なるように貼合わせる。その後、液晶を注入し、封止す
ることにより液晶層25を形成し、パネル30を作成す
る(b)。パネル30の周囲に樹脂を塗布した後硬化さ
せ、パネル30の周囲からのエッチング液の侵入を防
ぐ。このようにして準備したパネル30の両面からフッ
酸の水溶液から成るエッチング液を用いてガラス基板
1,11のエッチングを行う。酸化タンタルはエッチン
グ液に溶解しないため、ガラス基板1,11が除去され
てバリア層2,12、機能素子層3、カラーフィルタ層
13および液晶層25からなるパネル31が得られる
(c)。
FIG. 3 is a process chart of a method for transferring a functional element according to a third embodiment of the present invention. First, a tantalum thin film is formed on a glass substrate 1 by a sputtering method.
This tantalum is anodically oxidized to form tantalum oxide and the barrier layer 2 is formed. A gate electrode wiring, a gate insulating layer, an amorphous silicon semiconductor layer, a source electrode wiring, and the like are sequentially formed thereon to form a functional element layer 3 composed of a TFT. Thus, the TFT substrate 1 as the first substrate
0 is obtained. Similarly, a barrier layer 12 is formed, and a color filter layer 13 is formed thereon, thereby obtaining a color filter substrate 20 as a second substrate (a).
The distance between the TFT substrate 10 and the color filter substrate 20 is 5
Plastic beads are sprinkled between the substrates so as to have a thickness of μm, and they are bonded so that the functional element layer 3 and the color filter layer 13 are on the inside. Thereafter, a liquid crystal is injected and sealed to form a liquid crystal layer 25, thereby forming a panel 30 (b). The resin is applied around the panel 30 and then cured to prevent the intrusion of the etchant from around the panel 30. The glass substrates 1 and 11 are etched from both sides of the panel 30 prepared as described above using an etching solution composed of an aqueous solution of hydrofluoric acid. Since tantalum oxide does not dissolve in the etching solution, the glass substrates 1 and 11 are removed to obtain a panel 31 including the barrier layers 2 and 12, the functional element layer 3, the color filter layer 13 and the liquid crystal layer 25 (c).

【0028】ガラス基板の厚さを減少させる手法として
は、上記の方法以外にも、機械的に基板を研磨して削り
取る方法、機械研磨とエッチングとを併用して化学的お
よび機械的に基板を研磨する方法およびブラスト処理に
より基板を削り取る方法などが適用できる。純水でリン
スし、乾燥した後、パネルの周囲に塗布し硬化させた樹
脂を剥離剤を用いて取り除く。パネル両面の薄層化され
たTFT基板10およびカラーフィルタ基板20に、有
機高分子から成る転写体6,16を接着用の樹脂からな
る接着層5,15を介して貼合わせる。ここで有機高分
子としてはポリエーテルスルホンを用いる。以上のよう
にして、軽く、変形に耐え、落下しても破損しにくい機
能性パネル32が得られる。
As a method of reducing the thickness of the glass substrate, in addition to the above-described methods, a method of mechanically polishing and shaving the substrate, and a method of chemically and mechanically polishing the substrate by using both mechanical polishing and etching. A polishing method, a method of scraping a substrate by blasting, and the like can be applied. After rinsing with pure water and drying, the resin applied and cured around the panel is removed using a release agent. Transfer members 6 and 16 made of an organic polymer are attached to the thinned TFT substrate 10 and color filter substrate 20 on both sides of the panel via adhesive layers 5 and 15 made of an adhesive resin. Here, polyether sulfone is used as the organic polymer. As described above, it is possible to obtain the functional panel 32 which is light, resists deformation, and is not easily damaged when dropped.

【0029】図4は、本発明の第4の実施形態である機
能素子の転写方法の工程図である。本実施形態では、第
3の実施形態とは異なり、バリア層2,12を設けず、
ガラス基板1,11上にTFTからなる機能素子層3お
よびカラーフィルタ層13を形成する。これによって、
第1および第2の基板であるTFT基板40およびカラ
ーフィルタ基板50が得られる(a)。TFT基板40
とカラーフィルタ基板50との間にプラスチックのビー
ズを散布し、機能素子層3およびカラーフィルタ層13
が内側となるように貼合わせる。その後、液晶を注入
し、封止することにより液晶層25を形成し、パネル6
0を作成する(b)。エッチング速度をエッチング液の
温度、濃度、撹拌方法等を厳密に管理することにより制
御し、ガラス基板1,11の厚さを均一に薄くすること
で薄型化したパネル61が得られる(c)。パネル61
の両面に有機高分子から成る転写体6,16を接着用の
樹脂からなる接着層5,15を介して貼合わせる
(d)。以上のようにして、軽く、変形に耐え、落下し
ても破損しにくい機能性パネル62が得られる。
FIG. 4 is a process chart of a method for transferring a functional element according to a fourth embodiment of the present invention. In the present embodiment, unlike the third embodiment, the barrier layers 2 and 12 are not provided,
The functional element layer 3 made of TFT and the color filter layer 13 are formed on the glass substrates 1 and 11. by this,
The TFT substrate 40 and the color filter substrate 50 as the first and second substrates are obtained (a). TFT substrate 40
Plastic beads are sprayed between the color filter substrate 50 and the functional element layer 3 and the color filter layer 13.
Glue so that is inside. Thereafter, liquid crystal is injected and sealed to form a liquid crystal layer 25, and the panel 6
0 is created (b). The etching rate is controlled by strictly controlling the temperature, concentration, stirring method, and the like of the etching solution, and the thickness of the glass substrates 1 and 11 is reduced uniformly to obtain the thinned panel 61 (c). Panel 61
Transfer members 6 and 16 made of an organic polymer are bonded to both surfaces of the substrate via adhesive layers 5 and 15 made of an adhesive resin (d). As described above, it is possible to obtain the functional panel 62 which is light, resists deformation, and is not easily damaged when dropped.

【0030】図5は、本発明の第5の実施形態である機
能素子の転写方法の工程図である。ガラスからなる基板
1上にタンタルの薄膜をスパッタ法で形成する。このタ
ンタルを陽極酸化して酸化タンタルにしバリア層2とす
る。その上にゲート電極配線、ゲート絶縁層形成、アモ
ルファスシリコンの半導層形成、ソース電極配線などを
順次行いTFTからなる機能素子層3を形成する。この
ようにしてTFT基板10が得られる。また、同様にし
てバリア層12を形成し、その上に、カラーフィルタ層
13を形成する。このようにして、カラーフィルタ基板
20が得られる(a)。機能素子基板10とカラーフィ
ルタ基板20との間隔が5μmになるように基板間にプ
ラスチックのビーズを散布し、機能素子層3およびカラ
ーフィルタ層13が内側となるように貼り合わせる。そ
の後、液晶を注入し、封止することによりパネル30を
作成する(b)。パネル30の周囲に樹脂を塗布した後
硬化させ、パネル30の周囲からのエッチング液の侵入
を防ぐ。このようにして準備したパネル30をフッ酸の
水溶液から成るエッチング液を用いてガラス基板1,1
1のエッチングを行う。酸化タンタルはエッチング液に
溶解しないため、ガラス基板1,11が除去されてバリ
ア層2,12、機能素子層3、カラーフィルタ層13お
よび液晶層25からなるパネル31が得られる(c)。
FIG. 5 is a process chart of a method for transferring a functional element according to a fifth embodiment of the present invention. A tantalum thin film is formed on a substrate 1 made of glass by a sputtering method. This tantalum is anodically oxidized to tantalum oxide to form the barrier layer 2. A gate electrode wiring, a gate insulating layer, a semiconductive layer of amorphous silicon, a source electrode wiring, and the like are sequentially formed thereon to form a functional element layer 3 composed of a TFT. Thus, the TFT substrate 10 is obtained. Similarly, the barrier layer 12 is formed, and the color filter layer 13 is formed thereon. Thus, the color filter substrate 20 is obtained (a). Plastic beads are sprayed between the functional element substrate 10 and the color filter substrate 20 so that the distance between the functional element substrate 10 and the color filter substrate 20 is 5 μm, and the functional element layer 3 and the color filter layer 13 are bonded to each other. Thereafter, a liquid crystal is injected and sealed to form the panel 30 (b). The resin is applied around the panel 30 and then cured to prevent the intrusion of the etchant from around the panel 30. The panel 30 prepared in this way was prepared by etching the glass substrates 1 and 1 using an etching solution comprising an aqueous solution of hydrofluoric acid.
1 is etched. Since tantalum oxide does not dissolve in the etching solution, the glass substrates 1 and 11 are removed to obtain a panel 31 including the barrier layers 2 and 12, the functional element layer 3, the color filter layer 13 and the liquid crystal layer 25 (c).

【0031】ガラス基板の厚さを減少させる手法として
は、上記の方法以外にも、機械的に基板を研磨して削り
取る方法、機械研磨とエッチングとを併用して化学的お
よび機械的に基板を研磨する方法およびブラスト処理に
より基板を削り取る方法などが適用できる。純水でリン
スし、乾燥した後、パネル30の周囲に塗布し硬化させ
た樹脂を剥離剤を用いて取り除く。薄層化されたTFT
基板10に有機高分子から成る転写体6を接着用の樹脂
からなる接着層5を介して貼り合わせる。ここで有機高
分子としてはポリエーテルスルホンを用いる。その後、
薄層化されたカラーフィルタ基板20にスピンコータま
たはスロットコータを用いて樹脂をコーティングし、硬
化させてコーティング層35を形成する(d)。このよ
うにして、軽く、変形に耐え、落下しても破損しにくい
機能性パネル33が得られる。
As a method of reducing the thickness of the glass substrate, in addition to the above method, a method of mechanically polishing and shaving the substrate, and a method of chemically and mechanically polishing the substrate by using both mechanical polishing and etching. A polishing method, a method of scraping a substrate by blasting, and the like can be applied. After rinsing with pure water and drying, the resin applied and cured around the panel 30 is removed using a release agent. Thinned TFT
A transfer body 6 made of an organic polymer is bonded to a substrate 10 via an adhesive layer 5 made of an adhesive resin. Here, polyether sulfone is used as the organic polymer. afterwards,
A resin is coated on the thinned color filter substrate 20 using a spin coater or a slot coater and cured to form a coating layer 35 (d). In this way, a functional panel 33 that is light, resists deformation, and is not easily damaged when dropped can be obtained.

【0032】図6は、本発明の第6の実施形態である機
能素子の転写方法の工程図である。本実施形態は、第5
の実施形態とは異なりバリア層2,12を設けず、ガラ
ス基板1,11上にTFTからなる機能素子層3および
カラーフィルタ層13を形成する。これによって、第1
および第2の基板であるTFT基板40およびカラーフ
ィルタ基板50が得られる(a)。TFT基板40とカ
ラーフィルタ基板50との間にプラスチックのビーズを
散布し、機能素子層3およびカラーフィルタ層13が内
側となるように貼合わせる。その後、液晶を注入し、封
止することにより液晶層25を形成し、パネル60を作
成する(b)。エッチング速度をエッチング液の温度、
濃度、撹拌方法等を厳密に管理することにより制御し、
ガラス基板1,11の厚さを均一に薄くすることで薄型
化したパネル61が得られる(c)。ガラス基板が残存
するTFT基板10と転写体6とを接着層5を介して貼
り合わせる。その後、ガラス基板が残存するカラーフィ
ルタ基板20にスロットコータを用いて樹脂をコーティ
ングし、硬化させてコーティング層35を形成する。以
上のようにして、軽く、変形に耐え、落下しても破損し
にくい機能性パネル63が得られる。
FIG. 6 is a process chart of a method for transferring a functional element according to a sixth embodiment of the present invention. In the present embodiment, the fifth
Unlike the first embodiment, the barrier layers 2 and 12 are not provided, and the functional element layer 3 made of TFT and the color filter layer 13 are formed on the glass substrates 1 and 11. Thereby, the first
Then, a TFT substrate 40 and a color filter substrate 50 as the second substrate are obtained (a). Plastic beads are sprinkled between the TFT substrate 40 and the color filter substrate 50, and bonded so that the functional element layer 3 and the color filter layer 13 are inside. Thereafter, a liquid crystal is injected and sealed to form a liquid crystal layer 25, thereby forming a panel 60 (b). The etching rate depends on the temperature of the etching solution,
Control by strictly controlling the concentration, stirring method, etc.,
By uniformly reducing the thickness of the glass substrates 1 and 11, the panel 61 thinned can be obtained (c). The TFT substrate 10 on which the glass substrate remains and the transfer body 6 are bonded via the adhesive layer 5. Thereafter, the color filter substrate 20 on which the glass substrate remains is coated with a resin using a slot coater, and cured to form a coating layer 35. As described above, it is possible to obtain the functional panel 63 which is light, resists deformation, and is not easily damaged even when dropped.

【0033】以上述べたように、本発明の機能素子の転
写方法によれば、特に基板を選ばず、様々な基板へ機能
素子を転写することが可能である。たとえば機能素子を
直接形成することができない、あるいは、形成すること
が困難な基板に転写することにより、従来得られなかっ
た特徴を備えた機能性パネルを製造することができる。
As described above, according to the method for transferring a functional element of the present invention, it is possible to transfer a functional element to various substrates regardless of a substrate. For example, by transferring a functional element to a substrate on which a functional element cannot be directly formed or is difficult to form, a functional panel having a characteristic which has not been obtained conventionally can be manufactured.

【0034】特に、透明基板上にTFTを形成した液晶
パネルを製造する際に、予め耐熱性および耐食性が優れ
る耐熱ガラスなどの基板を用いて機能性薄膜の形成およ
び加工を行い、有機高分子などの耐衝撃性に優れ、軽量
な基板にTFT層を転写することにより、優れた信頼性
と携帯性とを同時に備えた液晶ディスプレイを容易に製
造することができる。このような利点は、液晶ディスプ
レイに限定されるものではなく、他の平面表示装置、薄
膜集積回路装置等の製造においても、同様に享受され
る。
In particular, when manufacturing a liquid crystal panel in which TFTs are formed on a transparent substrate, a functional thin film is formed and processed in advance using a substrate such as heat resistant glass having excellent heat resistance and corrosion resistance. By transferring the TFT layer to a lightweight substrate having excellent impact resistance, a liquid crystal display having both excellent reliability and portability can be easily manufactured. Such advantages are not limited to liquid crystal displays, but can be similarly enjoyed in the manufacture of other flat panel display devices, thin film integrated circuit devices, and the like.

【0035】[0035]

【発明の効果】以上のように本発明によれば、機能素子
の性能を低下させることなく、機能素子を形成する基板
と製品として使用する際に用いる基板とを個別に選択す
ることが可能となる。これによって、機能素子をフレキ
シブルな基板へ転写することが可能となり、温度制限が
必要な基板上にも、特性の良好な高温プロセスで機能素
子を形成でき、自由な機能素子基板が形成可能となる。
As described above, according to the present invention, a substrate for forming a functional element and a substrate for use as a product can be individually selected without deteriorating the performance of the functional element. Become. As a result, the functional element can be transferred to a flexible substrate, and the functional element can be formed by a high-temperature process with good characteristics on a substrate requiring temperature limitation, and a free functional element substrate can be formed. .

【0036】また本発明によれば、基板を薄層化する際
に機能素子がダメージを受けることを防ぐことができ
る。
According to the present invention, it is possible to prevent the functional element from being damaged when the substrate is thinned.

【0037】また本発明によれば、機能素子の表面を保
護しなくても、別基板へ転写することが可能となりプロ
セスを簡略化することができる。
Further, according to the present invention, it is possible to transfer to a different substrate without protecting the surface of the functional element, and the process can be simplified.

【0038】また本発明によれば、パネルを薄型化する
ことができる。また本発明によれば、機能素子にダメー
ジを与えることなく、基板の除去が可能となり、転写後
の機能素子基板を軽量化することができる。
According to the present invention, the thickness of the panel can be reduced. Further, according to the present invention, the substrate can be removed without damaging the functional element, and the weight of the functional element substrate after transfer can be reduced.

【0039】また本発明によれば、薄層化の条件を制御
することでガラス基板の一部を残存し、バリア層を形成
しなくても、基板の薄層化が可能である。
According to the present invention, by controlling the conditions for thinning, a part of the glass substrate can be left, and the thickness of the substrate can be reduced without forming a barrier layer.

【0040】また本発明によれば、機能素子基板がフレ
キシブルとなり、様々な応用が可能となる。
Further, according to the present invention, the functional element substrate becomes flexible, and various applications are possible.

【0041】また本発明によれば、機能素子を転写する
ことにより、様々な機能を有する機能性パネルが容易に
得られる。
According to the present invention, a functional panel having various functions can be easily obtained by transferring a functional element.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施形態である機能素子の転写
方法の工程図である。
FIG. 1 is a process chart of a method for transferring a functional element according to a first embodiment of the present invention.

【図2】本発明の第2の実施形態である機能素子の転写
方法の工程図である。
FIG. 2 is a process chart of a method for transferring a functional element according to a second embodiment of the present invention.

【図3】本発明の第3の実施形態である機能素子の転写
方法の工程図である。
FIG. 3 is a process chart of a method for transferring a functional element according to a third embodiment of the present invention.

【図4】本発明の第4の実施形態である機能素子の転写
方法の工程図である。
FIG. 4 is a process chart of a method for transferring a functional element according to a fourth embodiment of the present invention.

【図5】本発明の第5の実施形態である機能素子の転写
方法の工程図である。
FIG. 5 is a process chart of a method for transferring a functional element according to a fifth embodiment of the present invention.

【図6】本発明の第6の実施形態である機能素子の転写
方法の工程図である。
FIG. 6 is a process chart of a method for transferring a functional element according to a sixth embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1,11 ガラス基板 2,12 バリア層 3 機能素子層 4 保護層 5,15 接着層 6,16 転写体 7,9 転写基板 8 ガラス薄板 13 カラーフィルタ層 10,40 TFT基板 20,50 カラーフィルタ基板 25 液晶層 35 コーティング層 30,60 パネル 31,61 薄型化されたパネル 32,33,62,63 機能性パネル DESCRIPTION OF SYMBOLS 1,11 Glass substrate 2,12 Barrier layer 3 Functional element layer 4 Protective layer 5,15 Adhesive layer 6,16 Transfer body 7,9 Transfer substrate 8 Glass thin plate 13 Color filter layer 10,40 TFT substrate 20,50 Color filter substrate 25 liquid crystal layer 35 coating layer 30, 60 panel 31, 61 thinned panel 32, 33, 62, 63 functional panel

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/336 (72)発明者 竹本 敏夫 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内 (72)発明者 西村 靖紀 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内 Fターム(参考) 2H092 HA28 JA24 JA34 JA37 KA05 MA07 MA17 NA25 PA01 PA08 5F110 AA17 CC07 DD02 DD12 DD24 GG02 GG15 GG25 HK03 QQ16 5G435 AA17 BB12 EE12 EE33 GG12 KK05 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/336 (72) Inventor Toshio Takemoto 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka (72) Inventor Yasunori Nishimura 22-22 Nagaikecho, Abeno-ku, Osaka City, Osaka F-term in Sharp Corporation (reference) 2H092 HA28 JA24 JA34 JA37 KA05 MA07 MA17 NA25 PA01 PA08 5F110 AA17 CC07 DD02 DD12 DD24 GG02 GG15 GG25 HK03 QQ16 5G435 AA17 BB12 EE12 EE33 GG12 KK05

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 基板の表面に機能素子を形成して機能素
子基板を形成する基板形成工程と、 前記基板の裏面から基板の厚みを減少または除去させる
ことで前記機能素子基板を薄層化する薄層化工程と、 前記薄層化した機能素子基板を転写体に転写する転写工
程とを有することを特徴とする機能素子の転写方法。
1. A substrate forming step of forming a functional element substrate by forming a functional element on a surface of a substrate, and reducing or removing a thickness of the substrate from a back surface of the substrate to reduce the thickness of the functional element substrate. A method for transferring a functional element, comprising: a thinning step; and a transfer step of transferring the thinned functional element substrate to a transfer body.
【請求項2】 前記機能素子の表面に、機能素子を保護
する保護層を形成することを特徴とする請求項1記載の
機能素子の転写方法。
2. The method according to claim 1, wherein a protective layer for protecting the functional element is formed on a surface of the functional element.
【請求項3】 2枚の基板の少なくとも一方の表面に機
能素子を形成して第1基板および第2基板を形成するす
る基板形成工程と、 機能素子が内側となるように第1基板と第2基板とを貼
り合わせてパネルを形成するパネル形成工程と、 前記パネルの両面から基板の厚さを減少または除去させ
ることで第1基板および第2基板を薄層化する薄層化工
程と、 前記薄層化した第1基板および第2基板を転写体に転写
する転写工程とを有することを特徴とする機能素子の転
写方法。
3. A substrate forming step of forming a functional element on at least one surface of two substrates to form a first substrate and a second substrate; and a first substrate and a second substrate having the functional element inside. A panel forming step of bonding the two substrates to form a panel; a thinning step of reducing the thickness of the substrate from both sides of the panel to reduce the thickness of the first substrate and the second substrate; Transferring the thinned first and second substrates to a transfer body.
【請求項4】 前記転写工程で、一方の基板には転写体
を転写し、他方の基板にはコーティングすることを特徴
とする請求項3記載の機能素子の転写方法。
4. The method according to claim 3, wherein, in the transfer step, a transfer body is transferred to one substrate and the other substrate is coated.
【請求項5】 前記機能素子と基板との間に、機能素子
を保護するバリア層を形成することを特徴とする請求項
1〜4のいずれか1つに記載の機能素子の転写方法。
5. The method according to claim 1, wherein a barrier layer for protecting the functional element is formed between the functional element and the substrate.
【請求項6】 前記バリア層は、金属の酸化物から成る
ことを特徴とする請求項5記載の機能素子の転写方法。
6. The method according to claim 5, wherein the barrier layer is made of a metal oxide.
【請求項7】 前記基板は、ガラスから成ることを特徴
とする請求項1〜6のいずれか1つに記載の機能素子の
転写方法。
7. The method according to claim 1, wherein the substrate is made of glass.
【請求項8】 前記転写体は、有機高分子から成ること
を特徴とする請求項1〜7のいずれか1つに記載の機能
素子の転写方法。
8. The method according to claim 1, wherein the transfer body is made of an organic polymer.
【請求項9】 請求項1〜8のいずれかに記載の機能素
子の転写方法を用いて製造されたことを特徴とする機能
性パネル。
9. A functional panel manufactured by using the method for transferring a functional element according to claim 1. Description:
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