JP2002184795A - Manufacturing method for semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve outward appearance quality and to lower a cost. SOLUTION: After resin sealing, a lead 1a on the backside 3a of a sealing part 3 is irradiated with laser light to remove resin burrs 8 and expose a connected surface 1g of the lead 1a, thereby improving the outward appearance quality of QFN and lowering the cost.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technology, and more particularly to a technology effective when applied to resin burrs removal and stand-off securing of a resin-encapsulated semiconductor device.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
Upon completion, they were examined by the inventor, and the outline is as follows.

A semiconductor package called a QFN (Quad Flat Non-leaded Package) is known as an example of a miniaturized resin-sealed semiconductor device.

In the QFN, a plurality of thin leads arranged around a tab for supporting a semiconductor chip are arranged on a peripheral portion of a back surface (a surface on a semiconductor device mounting side) of a sealing portion.

The QFN is assembled using a lead frame. At this time, in the molding step, resin molding is performed only on one side of the lead frame on which the semiconductor chip is mounted.

In the QFN, each lead is arranged on the peripheral edge of the back surface of the sealing portion.
Mounting area (connection area) when soldering to a mounting board etc.
Must be secured.

Therefore, in QFN, a mold
When burrs of the mold resin (resin burrs or resin flash burrs due to a leaking resin, these are referred to as resin burrs (coating resin) hereinafter) are formed on the leads on the back surface of the sealing portion, using a paper file or the like, The back surface of the sealing portion is polished to remove resin burrs, thereby exposing the leads.

In the QFN, molding is performed using a film sheet or the like so that resin burrs are not formed on the leads on the back surface of the sealing portion.
Hereinafter, it is referred to as a laminate mold).

That is, at the time of molding, the film sheet is brought into close contact with the back surface of the sealing portion in the cavity of the mold, thereby preventing resin burrs from adhering to the leads on the back surface of the sealing portion. It is.

A technique of polishing the back surface of a semiconductor device to expose leads on the back surface is disclosed in, for example, Japanese Patent Laid-Open No.
No. 195743 and JP-A-2-240940.

[0011]

However, in the removal of resin burrs at the sealing portion of the QFN according to the above-mentioned technique, polishing using a paper file may damage the back surface of the sealing portion and deteriorate the appearance quality. It becomes a problem.

Further, the paper file has a long life, so that it is necessary to replace the paper file. In addition, it is difficult to control the amount of polishing (in the depth direction), so that stable polishing cannot be performed. It is.

[0013] Further, in the case of a mold using a laminate mold, there is a problem that the equipment is costly, the cost of the film sheet is also high, and the production cost is high.

An object of the present invention is to provide a method of manufacturing a semiconductor device which improves the appearance quality and reduces the cost.

Another object of the present invention is to provide a method of manufacturing a semiconductor device which ensures a stand-off.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0017]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, in the method of manufacturing a semiconductor device according to the present invention, the step of mounting the semiconductor chip on a chip mounting portion of a chip supporting member capable of supporting a semiconductor chip includes the steps of: Connecting the terminal of the chip supporting member to a terminal by a connecting member, and arranging a plurality of external terminals or external terminal mounting electrodes on a semiconductor device mounting side surface of the semiconductor chip by resin molding the semiconductor chip. Forming the sealing portion so that the external terminal or the external terminal mounting electrode on the surface of the sealing portion on the semiconductor device mounting side is irradiated with a laser beam. Removing the coating resin to expose the external terminals or the external terminal mounting electrodes.

According to the present invention, the coating resin can be carbonized and removed by irradiating a laser after the molding to remove the coating resin.

Therefore, the external terminals or the external terminal mounting electrodes can be reliably exposed without impairing the external appearance of the back surface of the sealing portion. As a result, the external appearance quality of the semiconductor device can be improved.

Further, the method of manufacturing a semiconductor device according to the present invention
A step of preparing a lead frame in which a plurality of leads are arranged around a tab which is a chip mounting portion capable of supporting a semiconductor chip; a step of mounting the semiconductor chip on the tab; and a surface electrode of the semiconductor chip and Connecting the leads corresponding to the above with a wire which is a connecting member, and forming the plurality of leads on a semiconductor device mounting side surface of the sealing portion by resin molding the semiconductor chip to form the sealing portion. Forming and exposing the leads by irradiating a laser to the leads on the semiconductor device mounting side surface of the sealing portion to remove the coating resin on the leads,
Separating the plurality of leads from the frame of the lead frame.

Further, a method of manufacturing a semiconductor device according to the present invention
A step of preparing a lead frame in which a plurality of leads are arranged around a tab which is a chip mounting portion capable of supporting a semiconductor chip; a step of mounting the semiconductor chip on the tab; and a surface electrode of the semiconductor chip and Connecting the leads corresponding to the above with a wire which is a connecting member, and exposing the plurality of leads to a surface of the sealing portion on the semiconductor device mounting side by resin molding the semiconductor chip to form the sealing portion. Forming, and irradiating a laser to the periphery of the lead on the surface of the semiconductor device mounting side of the sealing portion to remove the mold resin around the lead and remove the lead from the surface of the semiconductor device mounting side. The method includes a step of projecting and a step of separating the plurality of leads from a frame portion of the lead frame.

[0023]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

Further, in the following embodiments, when it is necessary for convenience, the description will be made by dividing into a plurality of sections or embodiments, but they are not unrelated to each other unless otherwise specified. One has a relationship of some or all of the other, such as modified examples, details, and supplementary explanations.

In the following embodiments, when referring to the number of elements (including the number, numerical value, amount, range, etc.), the number is particularly limited to a specific number and is clearly limited to a specific number in principle. Except for cases, the number is not limited to the specific number, and may be greater than or less than the specific number.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In all the drawings for describing the embodiments, members having the same functions are denoted by the same reference numerals, and the repeated description thereof will be omitted.

FIG. 1 is a diagram showing a structure of a QFN which is an example of an embodiment of a semiconductor device assembled by a method of manufacturing a semiconductor device according to the present invention, wherein FIG.
(B) is a bottom view, (c) is a side view, and FIG.
FIG. 3 is a cross-sectional view showing the structure of the FN, FIG. 3 is an enlarged partial plan view showing an example of the structure of the lead frame used for assembling the QFN shown in FIG. 1, and FIG. It is a figure which shows an example of a structure, (a) is a partial bottom view, (b) is an enlarged partial bottom view which expands and shows the A section of (a), (c) is the BB line of (b). 5 is a bottom view showing an example of a laser irradiation location in the deburring step of the method for manufacturing the QFN shown in FIG. 1, and FIG. 6 is a view showing a structure of a mask member for the irradiation location shown in FIG. FIGS. 7 to 10 are partial plan views showing one example, and FIGS.
FIG. 11 is a bottom view showing a laser irradiation part of a modification example with respect to the irradiation part shown in FIG. 11, FIG. 11 is a conceptual diagram showing a deburring method of a modification example in the method of manufacturing a semiconductor device according to the embodiment of the present invention, and FIG. It is a diagram showing a stand-off forming method of a modified example in the method of manufacturing a semiconductor device according to the embodiment,
(A) is a bottom view showing a laser irradiation position, and (b) is (a)
FIG. 5 is an enlarged partial cross-sectional view of a cross section taken along line CC of FIG.

The semiconductor device of the present embodiment shown in FIGS. 1 and 2 is a small-sized, resin-sealed type and a surface-mount type. In the present embodiment, as an example of the semiconductor device,
QFN5 will be described.

The QFN 5 is, for example, a small semiconductor package incorporated in a portable electronic device or the like.
As shown in (b), a plurality of leads 1a as external terminals are arranged side by side on a peripheral portion of a semiconductor device mounting side surface (hereinafter referred to as a back surface 3a) of a sealing portion 3 formed by a resin mold. Things.

The QF according to the present embodiment shown in FIGS.
The structure of N5 (semiconductor device) will be described.
Tab (chip mounting portion) 1b for supporting a semiconductor chip 2 having a semiconductor integrated circuit formed thereon, sealing portion 3 formed by sealing semiconductor chip 2 with resin, and tab 1b At the same time, a plurality of leads 1a exposed on the peripheral portion of the back surface 3a of the sealing portion 3, a bonding wire 4 (connecting member) for connecting the pad 2a which is a surface electrode of the semiconductor chip 2 and the corresponding lead 1a. Consisting of
When the resin burr (coating resin) 8 shown in FIG. 4 is removed (hereinafter, referred to as deburring) on the back surface 3a of the sealing portion 3 after the molding, the laser burr 12 shown in FIG. 11 is used.

Note that, as shown in FIG.
The tab 1b supporting the semiconductor chip 2 on each of the leads 1a is formed by half etching or pressing.
Is formed to a thickness of about one half of
The FN 5 has a structure in which the molding resin also wraps around the back surface 1 d side of the tab 1 b during molding to form the sealing portion 3.

As a result, the QFN 5 has a structure in which the tab 1 b is not exposed on the back surface 3 a of the sealing portion 3 but is embedded in the sealing portion 3.

However, the QFN 5 of the present embodiment may have a structure in which the tab 1b is exposed on the back surface 3a of the sealing portion 3.

At the four corners of the back surface 3a of the sealing portion 3, the ends of the suspension leads 1e that support the tabs 1b at the corners are exposed.

As shown in FIG. 2, a solder plating layer 6 is formed on the connection surface 1g of each lead 1a exposed at the peripheral edge of the back surface 3a of the sealing portion 3. The solder plating layer 6 is formed on the surface to be connected 1g after the deburring step after molding, and may be a palladium (Pd) plating layer other than the solder plating layer.

However, in the case of a palladium plating layer, it is desirable to form it in a lead frame state in advance.

As shown in FIG. 4, the resin burr 8 formed by the resin mold is formed so as to cover a part of the connection surface 1g exposed on the back surface 3a of the sealing portion 3 of the lead 1a. For example, there are burrs due to a leaking resin (resin) and resin flash burrs.

The semiconductor chip 2 is fixed to the tab 1b by, for example, an epoxy adhesive (die bonding material).

The tab 1b, the suspension lead 1e, and each lead 1a are formed of, for example, a copper (Cu) alloy or an alloy of iron and nickel (Fe-Ni).

The bonding wire 4 (connecting member) for connecting the pad 2a of the semiconductor chip 2 and the corresponding lead 1a is, for example, a gold wire.

Further, the sealing portion 3 is formed by resin sealing by a molding method, and a molding resin (resin) used at this time is, for example, a thermosetting epoxy resin.

Next, a method of manufacturing the QFN 5 according to the present embodiment will be described.

First, a plurality of leads 1 are arranged around a tab 1b (chip mounting portion) capable of supporting the semiconductor chip 2 shown in FIG.
A lead frame 1 (chip supporting member) as shown in FIG.

Each lead 1a is connected to the lead frame 1
And the tab 1b is supported by the suspension leads 1e from four directions.

Here, as the lead frame 1, FIG.
A frame material in the form of a strip in which a plurality of package regions are arranged in a line as shown in FIG. 1 or a matrix frame in which a plurality of the package regions are formed in a plurality of rows × a plurality of columns. You may.

The thickness of the lead frame 1 is, for example, about 0.10 to 0.20 mm. Therefore, the thickness of the lead 1a and the suspension lead 1e is also 0.10 to 0.20 similarly.
The thickness is about mm, but when the tab 1b is half-etched as in the QFN 5 of the present embodiment, the thickness is about half the thickness of the lead 1a.

The material and thickness of the lead frame 1 are not limited to these.

Thereafter, the semiconductor chip 2 having the semiconductor integrated circuit formed on the main surface 2b is prepared, and the tab 1b and the semiconductor chip 2 are joined by die bonding (also called chip mounting or pellet bonding).

That is, the semiconductor chip 2 is mounted on the tab 1b.

At this time, an epoxy-based adhesive (die bonding material) or the like is applied on the tab 1b, and the tab 1b and the back surface 2c of the semiconductor chip 2 are connected via this adhesive as shown in FIG. Join.

Thereafter, wire bonding is performed.

That is, by performing wire bonding,
The pads 2a of the semiconductor chip 2 and the corresponding leads 1a are connected by wires 4 such as gold wires.

Thereafter, resin molding is performed to seal the semiconductor chip 2, the tab 1b, and the wire 4 with resin. Here, for example, molding is performed by transfer molding.

At this time, as shown in FIG. 1B, the sealing portion 3 is formed so that a plurality of leads 1a are arranged on the periphery of the back surface 3a of the sealing portion 3.

In the QFN 5, since the resin molding is performed on the chip supporting surface 1c side of the lead frame 1, it is a single-sided molding.

After completion of the resin sealing, FIGS. 4 (a), (b) and (c)
As shown in the figure, the lead 1 exposed on the back surface 3a of the sealing portion 3
Resin burrs 8 (covering resin) such as resin burrs or resin flash burrs 8 (covering resin) such as resin flash burrs are formed on the connected surface 1g of FIG. The connection area of the connection surface 1g of 1a is not sufficiently secured.

Therefore, after resin sealing, the resin burr 8 (coating resin) formed on the connection surface 1g of the lead 1a is removed.

Here, the laser 12 shown in FIG.
The resin burr 8 is irradiated with the resin burr 8 to carbonize and remove the resin burr 8, thereby forming the connection surface 1g of the lead 1a.
Are all exposed.

The laser 12 to be used is preferably, for example, a YAG laser or a CO ₂ laser, but is not limited to these, and other lasers 12 that do not adversely affect the QFN 5 may be used. Good.

Thus, for example, when a YAG laser is used, it is possible to irradiate at a high speed of 200 mm / s with a continuous power of 50 W.

The laser irradiation spot 9 when irradiating the resin burr 8 with the laser 12 is shown in FIG. 5, FIG.
Various things are conceivable as shown in FIG.

In FIGS. 5, 8 to 10, the hatched portions indicate the laser irradiation spots 9.

First, FIG. 5 shows that the lead 1a and the vicinity thereof are irradiated with the laser 12 so that the laser-irradiated portion 9 is placed on the lead 1a.
a and its surroundings.

In this case, by using the mask jig 10 as a mask member as shown in FIG. 6, the laser irradiation spot 9 can be irradiated with high accuracy.

That is, the mask jig 10 has an opening 10a corresponding to the laser irradiation location 9 shown in FIG. 5, and the lead 1a and the opening 10a
The mask jig 10 and the back surface 3 of the sealing portion 3.
a and the area other than the laser irradiation location is the mask jig 1
0, and in this state, the laser 12 is irradiated toward the opening 10a.

As a result, the laser irradiation spot 9 shown in FIG.
Can be irradiated.

FIG. 7 shows a case where the laser 12 is irradiated only on the portion of the lead 1a covered with the resin burr 8. Since the laser 12 can irradiate a minute area in a spot manner, Only the resin burr 8 on 1a can be irradiated.

FIG. 8 shows a case where only the lead 1a is irradiated on the back surface 3a of the sealing portion 3 without irradiating the molding resin.

That is, only each of the leads 1a is used as the laser-irradiated portion 9. In this case, too, the laser 12 is irradiated only to the lead 1a by using a mask member having the opening 10a having the same shape as the lead 1a. it can.

FIG. 9 shows a case where the lead 1a and the molding resin are irradiated on the back surface 3a of the sealing portion 3 along the peripheral edge thereof.

That is, on the back surface 3a of the sealing portion 3,
A region along the periphery of the back surface 3a is irradiated with a laser beam in a ring shape with an irradiation width substantially equal to the lead length. In this case, the inside region of each lead 1a on the back surface 3a of the sealing portion 3 is covered. A mask member is used. Then, on the back surface 3a of the sealing portion 3, the inner region of each lead 1a is covered with the mask member, and in this state, the outer region of the mask member is irradiated with laser along the peripheral portion to form each lead 1a and the molding resin. Is irradiated.

FIG. 10 shows a case where the entire back surface 3a of the sealing portion 3 is irradiated with a laser by setting the entire back surface 3a to a laser irradiation position 9.

The resin burrs 8 formed on the leads 1a can be removed by the laser irradiation shown in FIGS. 5, 7 to 10, whereby the connection surface 1g of each lead 1a is sufficiently exposed. Can be done.

As a result, it is possible to sufficiently secure the connection area of the connection surface 1g.

In the case of laser irradiation, the mask jig 1
A mask member such as 0 may not necessarily be used.

Deburring by laser irradiation (resin burr 8
Is removed), and then plating is performed.

That is, the solder plating layer 6 is formed on the connection surface 1g of each lead 1a exposed from the back surface 3a of the sealing portion 3.

At this time, for example, the solder plating layer 6 is formed by an electrolytic plating method.

In the case of assembling in which palladium (Pd) plating is performed in advance on a single lead frame, the plating forming step after deburring becomes unnecessary.

Thereafter, lead cutting is performed.

That is, the leads 1a and the suspension leads 1e shown in FIG. 3 are separated from the frame portion 1f of the lead frame 1 by cutting, and individualized into packages.

Thus, the QFN 5 as shown in FIGS. 1 and 2 can be assembled.

Next, a modification using laser irradiation in the method of manufacturing the semiconductor device of the present embodiment shown in FIGS. 11 and 12 will be described.

First, in FIG. 11, deburring by laser irradiation (removal of the resin burr 8) is performed together with marking by laser irradiation.

That is, in the marking step after the resin sealing (characters or symbols are attached to the surface 3b of the sealing portion 3), deburring is performed simultaneously with the marking (burr removal in the deburring step). Marking may be performed at the same time as picking).

FIG. 11 shows a method of simultaneously performing marking and deburring. For example, by using a manufacturing apparatus having a laser irradiation system above and below a transport system, marking and deburring are performed. And at the same time.

In the above-mentioned manufacturing apparatus, the laser irradiation system above and below the transport system has a laser head 13 for oscillating the laser 12 and a shutter 14 for shutting off the laser 12.
And a mirror 15 for changing the optical path of the laser 12.

Thus, for example, the laser 12 is applied to the surface 3b of the sealing portion 3 formed on the lead frame 1 by using the laser irradiation system on the upper side of the transport system to perform marking, and at the same time, at the same time In place, the laser 1 can be irradiated on the lead 1a on the back surface 3a of the sealing portion 3 by using the laser irradiation system on the lower side of the transport system to remove the resin burr 8 on the lead 1a and expose the lead 1a. become.

Therefore, it is possible to remove the resin burr 8 simultaneously with the marking.

In FIG. 11, the upper side of the transfer system is a laser irradiation system for marking, and the lower side of the transfer system is a laser irradiation system for deburring. However, by changing the opening / closing speed of the shutter 14, etc. Any of the upper and lower sides may be used for marking or deburring.

FIG. 12 shows that, regardless of the deburring,
The laser irradiation is used to ensure the standoff 11 of the QFN 5.

That is, after resin sealing, the back surface 3 of the sealing portion 3
a of the lead 1a without irradiating the laser 12 to the lead 1a.
The laser resin 12 is applied to the periphery of the lead 1a to remove the mold resin around the lead 1a, thereby making the lead 1a surely protrude from the back surface 3a of the sealing portion 3.

That is, as shown in FIG. 12 (a), a portion (hatched portion) except for the lead 1a on the back surface 3a of the sealing portion 3 is a laser irradiated portion 9, and the laser irradiated portion 9 is formed.
1 is irradiated with a laser 12 shown in FIG.
As shown in FIG. 2B, the standoff 11 (the distance between the lower surface (back surface 3a) of the sealing portion 3 and the mounting surface) can be formed.

According to the method of manufacturing QFN5 (semiconductor device) of the present embodiment, the following operation and effect can be obtained.

That is, after molding, the lead 1a on the back surface 3a of the sealing portion 3 is irradiated with the laser
, The resin burr 8 can be carbonized and removed.

Therefore, the leads 1a can be reliably exposed without impairing the appearance of the back surface 3a of the sealing portion 3, and as a result, the appearance quality of the QFN 5 can be improved.

Further, since no paper file or the like is used at the time of deburring, there is no need to replace the paper file or the like, and the efficiency of the operation of removing the resin burr 8 can be increased.

Further, since the resin burrs 8 are removed by the laser 12, it is easy to control the polishing amount (in the depth direction) of the mold resin, and stable polishing (burr removal) is performed.
It can be performed.

Since the polishing amount can be easily controlled, there is no need to perform lamination molding. As a result, the cost of equipment and film sheets related to lamination molding becomes unnecessary, and the production cost of QFN5 can be greatly reduced.

Further, since it is not necessary to perform a lamination mold, it is not necessary to purchase a film sheet, and the deburring operation can be facilitated.

Further, by using the laser 12, it is possible to carbonize the mold resin only in a limited area.

That is, while polishing using a paper file or the like can only polish the entire surface or a relatively large area, the laser 12 carbonizes even a minute area using a mask member such as a mask jig 10 ( Bake) can be.

Therefore, in the case of the QFN 5 in which the external terminal is the short lead 1a as in the present embodiment, it is very effective to be able to remove the mold resin in the minute area on the back surface 3a of the sealing portion 3. , The effect of removing (deburring) the resin burr 8 in the QFN 5 (the effect of improving the appearance quality, improving the efficiency of the deburring operation and reducing the manufacturing cost of the QFN 5) can be made more effective.

Further, by using the laser 12, deburring can be performed by the same laser 12 as that used for the marking, and the marking is performed simultaneously with the marking on the surface 3b of the sealing portion 3. Back 3 of part 3
It becomes possible to remove the resin burr 8 of a.

Therefore, the resin burrs 8 can be removed without increasing the number of steps.

Further, when the semiconductor device is the QFN 5 as in this embodiment, by using the laser 12,
It is possible to remove only the molding resin around the leads 1a on the back surface 3a of the sealing portion 3.

Therefore, lead 1a in QFN5
Stand-off 11 can be secured.

Further, the resin burrs 8 are removed by the laser 12 for the QFN 5 which becomes defective due to the presence of the resin burrs 8 in the appearance inspection, so that Q
FN5 can be reproduced.

Although the invention made by the inventor has been specifically described based on the embodiments of the present invention, the present invention is not limited to the above embodiments of the invention, and does not depart from the gist of the invention. It is needless to say that various changes can be made.

For example, in the above-described embodiment, the case where the tab 1b is a small X-shaped crosstab smaller than the semiconductor chip 2 in the lead frame 1 of FIG. 3 is illustrated, but the shape of the tab 1b is not particularly limited. Instead, it may be square or circular.

Furthermore, the semiconductor chip 2 is not limited to the small tab.
A larger type tab 1b may be used.

In the above-described embodiment, the case where the semiconductor device is a small QFN 5 is described. However, the semiconductor device is a resin-sealed type and the back surface 3a of the sealing portion 3 is formed.
If external terminals are arranged on the CSP (Chip Scale Package) other than QFN5 or BGA (Ball Grid Ar
ray).

For example, in the semiconductor device of the modified example shown in FIG. 13, a lead 7b serving as an external terminal mounting electrode is disposed on the back surface 3a of the sealing portion 3, and a solder serving as an external terminal is provided on the connection surface 1g of the lead 7b. The ball terminal package 7 on which the ball 7a is mounted. Even in a semiconductor device having such a structure, when the resin burr 8 formed on the lead 7b is deburred, it is irradiated with the laser 12 to perform the deburring. Thus, the same effect as in the case of QFN5 of the present embodiment can be obtained.

[0114]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). After the molding, the coating resin is removed by irradiating a laser to the external terminal or the external terminal mounting electrode on the back surface of the sealing portion, so that the coating resin can be carbonized and removed. As a result, the appearance quality of the semiconductor device can be improved.

(2). Since no paper file or the like is used, the replacement operation does not occur, and the efficiency of the removing operation of the coating resin can be improved. Furthermore, since the coating resin is removed by laser, the polishing amount can be easily controlled,
Stable polishing can be performed.

(3). According to the above (2), the polishing amount can be easily controlled, so that it is not necessary to perform a lamination mold. As a result, the manufacturing cost of the semiconductor device can be significantly reduced. Further, since there is no need to perform lamination molding, it is not necessary to purchase a film sheet, and therefore, the work of removing the coating resin can be facilitated.

(4). By using the laser, it is possible to perform marking on the surface of the sealing portion and at the same time, remove the coating resin on the back surface of the sealing portion. Therefore, the coating resin can be removed without increasing the number of steps.

(5). By using a laser, QF
In the case of N, it is possible to remove only the mold resin around the leads on the back surface of the sealing portion. Therefore, Q
It is possible to secure the stand-off of the lead in the FN.

(6). In the case of QFN, by removing the coating resin with a laser from the QFN that has become defective due to the presence of the coating resin in the appearance inspection, the QFN can be regenerated in the appearance inspection step.

[Brief description of the drawings]

FIGS. 1A, 1B, and 1C are views showing a structure of a QFN which is an example of an embodiment of a semiconductor device assembled by a method of manufacturing a semiconductor device according to the present invention, and FIG. FIG. 2B is a plan view, FIG. 2B is a bottom view, and FIG.

FIG. 2 is a sectional view showing the structure of the QFN shown in FIG.

FIG. 3 is an enlarged partial plan view showing an example of the structure of a lead frame used for assembling the QFN shown in FIG.

4 (a), (b), and (c) are views showing an example of a structure at a stage of ending a molding step in assembling the QFN shown in FIG. 1, (a) is a partial bottom view, and (b) is (A) is an enlarged partial bottom view showing part A in enlargement, (c) is B-
It is the fragmentary sectional view cut along the B line.

FIG. 5 is a bottom view showing an example of a laser irradiation location in a deburring step of the method for manufacturing the QFN shown in FIG. 1;

6 is a partial plan view showing an example of a structure of a mask member for an irradiation place shown in FIG.

FIG. 7 is a bottom view showing a laser irradiation location of a modification example of the irradiation location shown in FIG. 5;

FIG. 8 is a bottom view showing a laser irradiation location of a modification of the irradiation location shown in FIG. 5;

FIG. 9 is a bottom view showing a laser irradiation location of a modification of the irradiation location shown in FIG. 5;

FIG. 10 is a bottom view showing a laser irradiation location of a modification example of the irradiation location shown in FIG. 5;

FIG. 11 is a conceptual diagram illustrating a deburring method according to a modification of the method of manufacturing a semiconductor device according to the embodiment of the present invention;

FIGS. 12A and 12B are diagrams showing a stand-off forming method according to a modification of the method of manufacturing the semiconductor device according to the embodiment of the present invention; FIG. FIG. 3B is an enlarged partial cross-sectional view of a cross section taken along line CC of FIG.

FIG. 13 is a cross-sectional view illustrating a structure of a semiconductor device according to a modification example of the QFN according to the embodiment of the present invention;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Lead frame (chip support member) 1a Lead (external terminal) 1b Tab (chip mounting part) 1c Chip support surface 1d Back surface 1e Suspended lead 1f Frame 1g Connected surface 2 Semiconductor chip 2a Pad (surface electrode) 2b Main surface 2c Back surface 3 Sealing portion 3a Back surface (surface on semiconductor device mounting side) 3b Front surface 4 Wire (connecting member) 5 QFN (semiconductor device) 6 Solder plating layer 7 Ball terminal package (semiconductor device) 7a Solder ball (external terminal) 7b Lead (External terminal mounting electrode) 8 Resin burr (coating resin) 9 Laser irradiation spot 10 Mask jig (mask member) 10a Opening 11 Standoff 12 Laser 13 Laser head 14 Shutter 15 Mirror

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Noboru Kobayashi 3274, Yagibashi Higashi, Hanazawa, Yonezawa, Yonezawa, Yamagata Prefecture 3274 Hitachi Yonezawa Electronics Co., Ltd. F term (reference) 5F061 BA01 CA21 EA14 GA01

Claims (5)

[Claims] A step of mounting the semiconductor chip on a chip mounting portion of a chip supporting member capable of supporting a semiconductor chip; and connecting a surface electrode of the semiconductor chip and a corresponding terminal of the chip supporting member with a connecting member. Connecting and resin molding the semiconductor chip to form the sealing portion such that a plurality of external terminals or external terminal mounting electrodes are arranged on a sealing portion or a surface of the chip supporting member on the semiconductor device mounting side. And irradiating a laser to the external terminal or the external terminal mounting electrode on the surface of the sealing portion on the semiconductor device mounting side to remove the coating resin on the external terminal or the external terminal mounting electrode and to remove the external terminal. Or a step of exposing the external terminal mounting electrode. 2. A step of preparing a lead frame in which a plurality of leads are arranged around a tab as a chip mounting portion capable of supporting a semiconductor chip; a step of mounting the semiconductor chip on the tab; Connecting the surface electrode and the corresponding lead with a wire that is a connecting member; and resin molding the semiconductor chip and disposing the plurality of leads on a semiconductor device mounting side surface of a sealing portion. Forming the sealing portion; irradiating a laser to the lead on the semiconductor device mounting side surface of the sealing portion to remove a coating resin on the lead to expose the lead; Separating the lead from a frame of the lead frame. A step of preparing a lead frame in which a plurality of leads are arranged around a tab which is a chip mounting portion capable of supporting a semiconductor chip; a step of mounting the semiconductor chip on the tab; and a step of mounting the semiconductor chip. Connecting the surface electrode and the corresponding lead with a wire that is a connecting member; and resin molding the semiconductor chip and disposing the plurality of leads on a semiconductor device mounting side surface of a sealing portion. Forming the sealing portion; and irradiating a laser to the lead disposed in the opening of the mask member by covering a portion other than the lead with a mask member on a surface of the sealing portion on the semiconductor device mounting side. Removing the coating resin on the leads to expose the leads; and separating the plurality of leads from the frame of the lead frame. The method of manufacturing a semiconductor device according to claim Rukoto. 4. A step of preparing a lead frame in which a plurality of leads are arranged around a tab, which is a chip mounting portion capable of supporting a semiconductor chip; a step of mounting the semiconductor chip on the tab; Connecting the surface electrode and the corresponding lead with a wire that is a connecting member; and resin molding the semiconductor chip and disposing the plurality of leads on a semiconductor device mounting side surface of a sealing portion. Forming the sealing portion, and irradiating a laser on the surface of the sealing portion to perform marking, and applying a laser to the lead on the semiconductor device mounting side surface of the sealing portion at the same place. Irradiating to remove the coating resin on the leads to expose the leads; and separating the plurality of leads from the frame of the lead frame. The method of manufacturing a semiconductor device according to symptoms. 5. A step of preparing a lead frame in which a plurality of leads are arranged around a tab which is a chip mounting portion capable of supporting a semiconductor chip, a step of mounting the semiconductor chip on the tab, and a step of mounting the semiconductor chip. Connecting the front surface electrode and the corresponding lead to each other by a wire as a connecting member, and exposing the plurality of leads to a semiconductor device mounting side surface of a sealing portion by resin molding the semiconductor chip. Forming the sealing portion; and irradiating a laser to the periphery of the lead on the surface of the sealing portion on the semiconductor device mounting side to remove mold resin around the lead, thereby removing the lead to the semiconductor device. A method of manufacturing a semiconductor device, comprising: a step of projecting from a surface on a mounting side; and a step of separating a plurality of leads from a frame portion of the lead frame.