JP2002171020A - Semiconductor laser device and its wire-bonding method - Google Patents

Semiconductor laser device and its wire-bonding method

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Publication number
JP2002171020A
JP2002171020A JP2000367701A JP2000367701A JP2002171020A JP 2002171020 A JP2002171020 A JP 2002171020A JP 2000367701 A JP2000367701 A JP 2000367701A JP 2000367701 A JP2000367701 A JP 2000367701A JP 2002171020 A JP2002171020 A JP 2002171020A
Authority
JP
Japan
Prior art keywords
semiconductor laser
bonding method
lead pin
metal wire
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000367701A
Other languages
Japanese (ja)
Inventor
Kenzo Nozaki
顕三 野崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2000367701A priority Critical patent/JP2002171020A/en
Publication of JP2002171020A publication Critical patent/JP2002171020A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
    • H01L2224/48456—Shape
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
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    • H01L2924/01082—Lead [Pb]

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser device that has superior workability, and can obtain full pressure welding strength at a secondary side, and to provide the wire bonding method of the semiconductor laser device. SOLUTION: In this wire bonding method of the semiconductor laser device, on an electrode surface 102a of a semiconductor laser chip 102, the primary side of a metal wire 106 is subjected to thermocompression bonding by the ball bonding method, and the secondary side is subjected to thermocompression bonding to a tip surface 105a of a lead pin 105 by the stitch bonding method. In this case, the tip surface 105a of the lead pin 105 is inclined by a specific angle α with respect to a side opposite to the electrode surface 102a of the semiconductor laser chip 102 to the electrode surface 102a of the semiconductor laser chip 102, and the secondary side of the metal wire 106 is subjected to the thermocompression bonding to the tip surface 105a.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体レーザ装置
と、その半導体レーザチップの電極面とリードピンの先
端面とを金属ワイヤで電気的に接続するためのワイヤボ
ンディング法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device and a wire bonding method for electrically connecting an electrode surface of the semiconductor laser chip and a tip surface of a lead pin with a metal wire.

【０００２】[0002]

【従来の技術】半導体レーザ装置は、従来、図８に示す
ようなパッケージタイプのものが一般的に知られてい
る。その組み立て方法は、例えば、まず、外形が５．６
ｍｍφまたは９ｍｍφの円形板状の金属製ステム１０１
の上に、光源となる半導体レーザチップ１０２と、その
半導体レーザチップ１０２からの出力光をモニタするた
めのＰＩＮフォトダイオード１０３とをダイボンドによ
り固定する。2. Description of the Related Art Conventionally, a package type semiconductor laser device as shown in FIG. 8 is generally known. The assembling method is, for example, first, the outer shape is 5.6.
mmφ or 9 mmφ circular plate-shaped metal stem 101
A semiconductor laser chip 102 serving as a light source and a PIN photodiode 103 for monitoring output light from the semiconductor laser chip 102 are fixed by die bonding.

【０００３】次に、ステム１０１にガラス封止１０４に
よって絶縁固定されたリードピン１０５に、半導体レー
ザチップ１０２とＰＩＮフォトダイオード１０３とをそ
れぞれ金属ワイヤ（Ａｕ線）１０６で電気的に接続す
る。そして、半導体レーザチップ１０２およびＰＩＮフ
ォトダイオード１０３を外部雰囲気から遮断するため
に、レーザー光出射用ガラス窓１０７を備えた金属製キ
ャップ１０８を被せ、ステム１０１の上面にキャップ１
０８を抵抗溶接で固定する。Next, the semiconductor laser chip 102 and the PIN photodiode 103 are electrically connected to the lead pins 105, which are insulated and fixed to the stem 101 by glass sealing 104, using metal wires (Au wires) 106, respectively. Then, in order to shield the semiconductor laser chip 102 and the PIN photodiode 103 from the external atmosphere, a metal cap 108 having a glass window 107 for emitting laser light is put thereon.
08 is fixed by resistance welding.

【０００４】上述の半導体レーザチップ１０２とリード
ピン１０５との接続には、通常、ワイヤボンディング法
が採用され、まず、半導体レーザチップ１０２の電極面
１０２ａに、ボールボンディング法により金属ワイヤ
（Ａｕ線）１０６の一次側を熱圧着し、次いで、その二
次側を、ステッチボンディング法により、リードピン１
０５の先端面１０５ａに熱圧着していた。The connection between the semiconductor laser chip 102 and the lead pins 105 is usually performed by wire bonding. First, a metal wire (Au wire) 106 is formed on the electrode surface 102a of the semiconductor laser chip 102 by ball bonding. The primary side is thermocompressed, and the secondary side is connected to the lead pin 1 by stitch bonding.
05 on the tip surface 105a.

【０００５】[0005]

【発明が解決しようとする課題】しかし、上述の従来の
ワイヤボンディング法では、その二次側で充分な圧着強
度が得られず、しばしば金属ワイヤ１０６のステッチ部
が剥がれることがあった。このような不具合の発生は、
例えば、図９に示すような引っ張りテスト（ワイヤ強度
試験）の結果により、二次側のステッチが形成された個
所（Ｅ）点で剥離現象がしばしば確認されていることに
よっても裏付けられている。However, in the above-mentioned conventional wire bonding method, a sufficient crimp strength cannot be obtained on the secondary side, and the stitch portion of the metal wire 106 often comes off. The occurrence of such a defect
For example, the results of a tensile test (wire strength test) as shown in FIG. 9 are supported by the fact that the peeling phenomenon is frequently confirmed at the point (E) where the secondary side stitch is formed.

【０００６】ところで、ワイヤボンディング法では、図
１０に示すように、まず、一次側で水素炎等によってキ
ャピラリ１１０の先端にボール（図示省略）を形成し、
そのキャピラリ１１０を半導体レーザチップ１０２の電
極面１０２ａに対して垂直状態に押し当てて金属ワイヤ
１０６の一次側を熱圧着する（ボールボンディング
法）。次いで、そのキャピラリー１１０を、そのまま二
次側に移動させて、リードピン１０５の先端面１０５ａ
に対して垂直状態に押し当ててステッチ部（圧着部）１
０９を形成するようにおこなわれる（ステッチボンディ
ング法）。In the wire bonding method, as shown in FIG. 10, first, a ball (not shown) is formed at the tip of a capillary 110 on the primary side by a hydrogen flame or the like.
The capillary 110 is pressed perpendicularly to the electrode surface 102a of the semiconductor laser chip 102, and the primary side of the metal wire 106 is thermocompression-bonded (ball bonding method). Next, the capillary 110 is moved to the secondary side as it is, and the tip end surface 105a of the lead pin 105 is moved.
Stitching part (crimping part) 1
09 (stitch bonding method).

【０００７】このような方法では、装置の構成上、両方
の圧着対象面、つまり、半導体レーザチップ１０２の電
極面１０２ａ（又はステム搭載面１０１ａ）と、リード
ピン１０５の先端面１０５ａとは互いに平行状態に設定
され、自動操作されるキャピラリ１１０に対して両圧着
対象面（１０２ａ，１０５ａ）が面直に対応するように
設定されていることが前提条件（絶対条件）となってい
た。In such a method, due to the structure of the apparatus, both surfaces to be crimped, that is, the electrode surface 102a (or stem mounting surface 101a) of the semiconductor laser chip 102 and the tip surface 105a of the lead pin 105 are in parallel with each other. The precondition (absolute condition) is that the two crimping target surfaces (102a, 105a) are set to correspond directly to the capillary 110 that is automatically operated.

【０００８】従って、ステッチ（部）１０９が形成され
る二次側では、リードピン１０５の先端面１０５ａに対
するキャピラリ１１０の打痕１１０ｂは当然円形となる
（図３（Ｂ）参照）。しかし、そのキャピラリ１１０の
押圧力によってステッチ１０９が形成されるのは、打痕
１１０ｂの一次側の一部分（二点鎖線のハッチングで示
す）のみであり、図１１に示すように、一次側と反対側
のキャピラリ１１０の先端部分は、リードピン１０５の
先端面１０５ａとの間に僅かの間隙を有したままの片当
たり状態でステッチ１０９が形成されることとなる。Therefore, on the secondary side where the stitch (portion) 109 is formed, the dent 110b of the capillary 110 with respect to the tip end surface 105a of the lead pin 105 is naturally circular (see FIG. 3B). However, the stitch 109 is formed only by a part of the primary side of the dent 110b (shown by hatching with a two-dot chain line) due to the pressing force of the capillary 110, and is opposite to the primary side as shown in FIG. The stitch 109 is formed in a one-end state with the tip portion of the capillary 110 on the side having a slight gap with the tip surface 105a of the lead pin 105.

【０００９】このような片当たりの押圧状態では、リー
ドピン１０５の先端面１０５ａは、二点鎖線で示すよう
に僅かなりといえども変形すれば（図示時計回りの方
向）、キャピラリ１１０のエッジ部分１１０ｅでの金属
ワイヤ１０６に対する押圧力に逃げが発生する。そのた
め、常に、大きなステッチ１０９を形成することができ
なかった。従って、従来では、図４（Ｂ）に示すよう
に、特に、ステッチ１０９の長さＬ１と厚みｔ１の値が
小さく、充分な圧着強度が得られなかった。なお、Ｗ１
はステッチ１０９の幅を示す。In such a pressed state of one end, if the tip surface 105a of the lead pin 105 is slightly deformed (clockwise direction in the figure) as shown by a two-dot chain line, the edge portion 110e of the capillary 110 The pressing force against the metal wire 106 at the time is released. Therefore, the large stitch 109 cannot always be formed. Therefore, in the related art, as shown in FIG. 4B, particularly, the values of the length L1 and the thickness t1 of the stitch 109 are small, and a sufficient crimp strength cannot be obtained. Note that W1
Indicates the width of the stitch 109.

【００１０】また、従来では、その二次側のステッチボ
ンディング法による圧着作業そのものがうまく実行でき
ないこともあった。すなわち、上述のような押圧力の逃
げに加えて、例えば、リードピン１０５の先端面１０５
ａが少しでも汚れていたり、その表面にキズ等がある
と、ボンディング性が著しく低下するため、場合によっ
ては、金属ワイヤ１０６が圧着されずに「跳ねる」と称
されるようなトラブルが発生することがあった。Conventionally, the crimping operation itself by the stitch bonding method on the secondary side may not be performed well. That is, in addition to the relief of the pressing force as described above, for example, the tip surface 105 of the lead pin 105
If a is slightly contaminated or has a scratch on its surface, the bonding property is remarkably reduced, and in some cases, a problem called "bounce" occurs without the metal wire 106 being pressed. There was something.

【００１１】このような場合には、次工程のボールボン
ディング法で、変形したボールが形成されたり、また、
ボールを形成できなかったりすることがあり、そのよう
な時には、自動的に装置が停止してしまうため、従来で
は、非常に、厳しい条件下でワイヤボンディング法をお
こなわざるを得ず、ボンディングの作業性がよくなかっ
た。In such a case, a deformed ball is formed by the ball bonding method in the next step,
In such a case, the ball may not be formed, and in such a case, the device is automatically stopped. In the past, the wire bonding method had to be performed under extremely severe conditions, and the bonding operation was difficult. Sex was not good.

【００１２】本発明は、このような実情に鑑みてなさ
れ、作業性よく二次側の圧着強度が充分に得られる半導
体レーザ装置およびそのワイヤボンディング法を提供す
ることを目的とする。The present invention has been made in view of the above circumstances, and has as its object to provide a semiconductor laser device and a wire bonding method for the semiconductor laser device, in which the secondary-side crimping strength can be sufficiently obtained with good workability.

【００１３】[0013]

【課題を解決するための手段】本発明は、上述の課題を
解決するための手段を以下のように構成している。According to the present invention, means for solving the above-mentioned problems are constituted as follows.

【００１４】（１）半導体レーザチップの電極面上に、
ボールボンディング法により、金属ワイヤの一次側を熱
圧着し、次いで、その二次側を、ステッチボンディング
法により、リードピンの先端面に熱圧着する半導体レー
ザ装置のワイヤボンディング法において、リードピンの
先端面を、半導体レーザチップの電極面に対して、その
半導体レーザチップの電極面とは反対側に向けて所定の
角度αだけ傾斜させ、その先端面に、金属ワイヤの二次
側を熱圧着することを特徴とする。(1) On the electrode surface of the semiconductor laser chip,
In a wire bonding method of a semiconductor laser device, the primary side of a metal wire is thermo-compressed by a ball bonding method, and then the secondary side is thermo-compressed to a tip surface of a lead pin by a stitch bonding method. The semiconductor laser chip is inclined by a predetermined angle α toward the opposite side to the electrode surface of the semiconductor laser chip with respect to the electrode surface of the semiconductor laser chip. Features.

【００１５】この構成によれば、リードピンの先端面
を、前記半導体レーザチップの電極面に対して、その半
導体レーザチップの電極面とは反対側に向けて所定の角
度αだけ傾斜させているので、キャピラリの先端部の一
次側のエッジ部分を、金属ワイヤに対して、従来よりも
強く押圧させることができ（押圧力の逃げを抑制し
て）、従来よりも長さと厚みが大きいステッチを形成で
き、剥がれにくくなり、かつ圧着強度が顕著に向上す
る。According to this structure, the tip surface of the lead pin is inclined by a predetermined angle α toward the side opposite to the electrode surface of the semiconductor laser chip with respect to the electrode surface of the semiconductor laser chip. The primary edge of the capillary tip can be pressed more strongly against the metal wire than before (by suppressing the escape of the pressing force), forming a stitch that is longer and thicker than before. It can be easily peeled off, and the bonding strength can be significantly improved.

【００１６】また、上述のように、リードピンの先端面
が、キャピラリに対して、押圧力の逃げを抑制できるよ
うな片当たり状態で対応するので、金属ワイヤに対して
常に安定した押圧力を作用させることができ、ボンディ
ング性（作業性）が顕著に向上し、その他のボンディン
グ作業の条件が大幅に緩和され、金属ワイヤの二次側が
「跳ねる」ようなトラブルの発生が低減され、装置の稼
働効率を顕著に向上させることができる。Further, as described above, since the tip end surface of the lead pin responds to the capillary in a one-sided contact state in which the escape of the pressing force can be suppressed, a stable pressing force always acts on the metal wire. The bonding property (workability) is remarkably improved, other bonding conditions are greatly relaxed, the occurrence of troubles such as "bounce" of the secondary side of the metal wire is reduced, and the operation of the apparatus is reduced. Efficiency can be significantly improved.

【００１７】（２）半導体レーザチップの電極面上に、
ボールボンディング法により、金属ワイヤの一次側を熱
圧着し、次いで、その二次側を、ステッチボンディング
法により、リードピンの先端面に熱圧着する半導体レー
ザ装置のワイヤボンディング法において、２つの半導体
レーザチップを、その電極面が同一向きとなるように離
間させて配置すると共に、その両半導体レーザチップの
中間に、共通のリードピンを配置し、そのリードピンの
先端面を、その中央部を境としてその両側が内側に向け
て所定の角度αだけ傾斜して対向しあう２つのテーパ面
からなるように形成し、その各テーパ面に、それぞれ最
も近い半導体レーザチップの電極面と接続された金属ワ
イヤの二次側を熱圧着することを特徴とする。(2) On the electrode surface of the semiconductor laser chip,
In a wire bonding method of a semiconductor laser device, a primary side of a metal wire is thermo-compressed by a ball bonding method, and a secondary side thereof is thermo-compressed to a tip end surface of a lead pin by a stitch bonding method. Are arranged so that their electrode surfaces are oriented in the same direction, and a common lead pin is arranged between the two semiconductor laser chips, and the leading end surface of the lead pin is placed on both sides of the center part as a boundary. Are formed in such a manner that the tapered surfaces are inclined inward by a predetermined angle α so as to face each other, and each of the tapered surfaces is formed of a metal wire connected to the electrode surface of the closest semiconductor laser chip. The next side is thermocompression bonded.

【００１８】この構成によれば、共通のリードピンの先
端面を、その中央部がやや凹むように対向しあう２つの
テーパ面からなるように形成するので、その各テーパ面
において、キャピラリの先端部の一次側のエッジ部分
を、金属ワイヤに対して、従来よりも強く押圧させ（押
圧力の逃げを抑制して）、従来よりも長さと厚みが大き
いステッチが形成され、剥がれにくくなり、かつ圧着強
度が顕著に向上する。According to this structure, the leading end surface of the common lead pin is formed to have two tapered surfaces that face each other so that the central portion thereof is slightly depressed. The edge on the primary side of the metal wire is pressed more strongly against the metal wire (suppressing the escape of the pressing force) to form a stitch that is longer and thicker than before, making it difficult to peel off and crimping The strength is significantly improved.

【００１９】また、上述のように、リードピンの先端面
が、キャピラリに対して、押圧力の逃げを抑制できるよ
うな片当たり状態で対応するので、金属ワイヤに対して
常に安定した押圧力を作用させることができ、ボンディ
ング性（作業性）が顕著に向上し、その他のボンディン
グ作業の条件が大幅に緩和され、金属ワイヤの二次側が
「跳ねる」ような不具合の発生が低減され、装置の稼働
効率を顕著に向上させることができる。 （３）前記所定の角度を、２°〜５°に設定してなるこ
とを特徴とする。Further, as described above, the tip end surface of the lead pin responds to the capillary in a one-sided state in which the escape of the pressing force can be suppressed, so that a stable pressing force always acts on the metal wire. The bonding property (workability) is remarkably improved, other bonding conditions are greatly relaxed, and the occurrence of problems such as the "bounce" of the secondary side of the metal wire is reduced, and the operation of the apparatus is reduced. Efficiency can be significantly improved. (3) The predetermined angle is set to 2 ° to 5 °.

【００２０】この構成によれば、リードピンの先端面の
角度を２°〜５°に設定することにより、金属ワイヤに
対して、充分な押圧力を安定的に作用させることがで
き、二次側の圧着強度を安定に確保することができる。According to this configuration, by setting the angle of the tip end surface of the lead pin to 2 ° to 5 °, a sufficient pressing force can be stably applied to the metal wire, and the secondary side Can reliably secure the pressure-bonding strength.

【００２１】（４）請求項１ないし３のいずれかに記載
の半導体レーザ装置のワイヤボンディング法により、半
導体レーザチップの電極面とリードピンの先端面とを金
属ワイヤで電気的に接続してなることを特徴とする。(4) The electrode surface of the semiconductor laser chip and the tip surface of the lead pin are electrically connected by a metal wire by the wire bonding method of the semiconductor laser device according to any one of claims 1 to 3. It is characterized by.

【００２２】この構成によれば、特に、構成上の変更や
別部材の付加を伴うことなく、作業性よく二次側の圧着
強度を充分に得られる安定した高い品質の半導体レーザ
装置をコストの増加を伴うことなく提供することができ
る。According to this configuration, in particular, a stable and high-quality semiconductor laser device capable of sufficiently obtaining the secondary-side pressure-bonding strength with good workability without changing the configuration or adding another member can be provided at a low cost. It can be provided without any increase.

【００２３】[0023]

【発明の実施の形態】以下に、本発明の一実施形態に係
る半導体レーザ装置およびワイヤボンディング法につい
て図面を参照しつつ説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor laser device and a wire bonding method according to one embodiment of the present invention will be described below with reference to the drawings.

【００２４】図１は、半導体レーザ装置の要部説明図
で、装置の全体構成は、図８に示すものと基本的には同
一であり、その半導体レーザチップ１０２の電極面１０
２ａと、リードピン１０５の先端面１０５ａとが、ワイ
ヤボンディング法により金属ワイヤ１０６によって電気
的に接続され、その二次側の圧着対象面となるリードピ
ン１０５の先端面１０５ａを、一次側の圧着対象面とな
る半導体レーザチップ１０２の電極面１０２ａに対して
反対側に向けて、所定の角度α（＝２°〜５°）だけ傾
斜させている点が異なる。FIG. 1 is an explanatory view of a main part of a semiconductor laser device. The overall structure of the device is basically the same as that shown in FIG.
2a and the distal end surface 105a of the lead pin 105 are electrically connected by a metal wire 106 by a wire bonding method, and the distal end surface 105a of the lead pin 105 serving as a secondary-side crimping target surface is connected to the primary-side crimping target surface. Is different from the electrode surface 102a of the semiconductor laser chip 102 by a predetermined angle α (= 2 ° to 5 °).

【００２５】そのリードピン１０５の先端面１０５ａ
と、キャピラリ１１０との対応関係は、図２に拡大して
示すように、キャピラリ１１０の先端部が、リードピン
１０５の先端面１０５ａに対して、ステッチ１０９が形
成される側（一次側）で金属ワイヤ１０６を介して片当
たり状態に当接する。このような対応状態では、図３
（Ａ）に示すように、（金属ワイヤ１０６を除いた場合
の）キャピラリ１１０による打痕１１０ａは半円形状と
なり、ステッチ１０９（二点鎖線のハッチングで表され
る）が、図３（Ｂ）に示す従来よりも格段に広く形成さ
れ、いわゆるつぶし代が拡大され、二次側の圧着強度が
顕著に向上する。The tip surface 105a of the lead pin 105
As shown in the enlarged view of FIG. 2, the tip of the capillary 110 is positioned on the side (primary side) where the stitch 109 is formed with respect to the tip 105 a of the lead pin 105. It comes into contact with the one-side contact state via the wire 106. In such a corresponding state, FIG.
As shown in FIG. 3A, the dent 110a formed by the capillary 110 (when the metal wire 106 is removed) has a semicircular shape, and the stitch 109 (represented by the two-dot chain line) is shown in FIG. (1), the so-called crushing margin is enlarged, and the crimp strength on the secondary side is significantly improved.

【００２６】そのステッチ１０９の形状は、図４（Ａ）
に示すように、特に、その長さＬ２と厚さｔ２が、図４
（Ｂ）に示す従来のステッチ１０９よりも、格段に大き
くなっている。これは、上述のように、リードピン１０
５の先端面１０５ａを、所定の角度α（＝２°〜５°）
だけ傾斜させたことにより、金属ワイヤ１０６が、キャ
ピラリ１１０から従来より大きな押圧力を受けたことに
よるものである。The shape of the stitch 109 is shown in FIG.
As shown in FIG. 4, in particular, the length L2 and the thickness t2 of FIG.
It is much larger than the conventional stitch 109 shown in FIG. This is, as described above, the lead pin 10
5 at a predetermined angle α (= 2 ° to 5 °)
This is due to the fact that the metal wire 106 receives a greater pressing force from the capillary 110 than the conventional one due to the inclination.

【００２７】より詳しく説明すると、リードピン１０５
の先端面１０５ａが、キャピラリ１１０から押圧力を受
けると、その先端面１０５ａは、押圧力から逃げようと
して、図２の時計回りにごく僅かに弾性変形しようとす
るが、本実施形態では、そのような逃げ方向への変形を
発生させることなく、キャピラリ１１０のエッジ部１１
０ｅで安定した押圧力を得られる程度に、リードピン１
０５の先端面１０５ａを、その逃げ方向とは逆向きに、
２°〜５°傾斜させている。More specifically, the lead pin 105
When the distal end surface 105a receives the pressing force from the capillary 110, the distal end surface 105a slightly elastically deforms clockwise in FIG. 2 in an attempt to escape from the pressing force. The edge portion 11 of the capillary 110 does not generate such deformation in the escape direction.
0e so that a stable pressing force can be obtained.
05 in the opposite direction to the escape direction,
It is inclined at 2 ° to 5 °.

【００２８】従って、その先端面１０５ａが、金属ワイ
ヤ１０６を介してキャピラリ１１０から押圧力を受けた
ときに、リードピン１０５の先端面１０５ａは、キャピ
ラリ１１０に対して、逃げ方向とは逆向きの傾斜状態と
なっているため、キャピラリ１１０のエッジ部１１０ｅ
では、押圧力の逃げが発生せず、金属ワイヤ１０６を確
実に捕捉して安定した押圧力を作用させることができ、
これにより、二次側の圧着強度を安定して向上させるこ
とができる。なお、リードピン１０５の先端面１０５ａ
の傾斜角度が５°以上になると、ステッチ１０９の幅Ｗ
２が過大となり、ステッチ１０９の厚みｔ２が薄くなり
好ましくない。Therefore, when the tip surface 105a receives a pressing force from the capillary 110 via the metal wire 106, the tip surface 105a of the lead pin 105 is inclined with respect to the capillary 110 in the direction opposite to the escape direction. In this state, the edge 110e of the capillary 110
Therefore, the pressing force does not escape, the metal wire 106 can be reliably captured and a stable pressing force can be applied,
Thereby, the press-bonding strength on the secondary side can be stably improved. In addition, the tip surface 105a of the lead pin 105
Is greater than 5 °, the width W of the stitch 109 is
2 becomes excessively large, and the thickness t2 of the stitch 109 becomes thin, which is not preferable.

【００２９】また、上述のように、リードピン１０５の
先端面１０５ａを傾斜させたことにより、ボンディング
作業の条件が大幅に緩和され、ボンディング性（作業
性）が顕著に向上し、金属ワイヤ１０６の二次側が「跳
ねる」ようなトラブル（不具合）の発生が抑制され、装
置の稼働効率を顕著に向上させることができ、生産性が
向上する。Further, as described above, by inclining the tip end surface 105a of the lead pin 105, the condition of the bonding operation is greatly eased, and the bonding property (operability) is remarkably improved. The occurrence of troubles (faults) such as “bounce” on the next side is suppressed, the operating efficiency of the apparatus can be significantly improved, and productivity is improved.

【００３０】ところで、上述のように、リードピン１０
５の先端面１０５ａを傾斜させて、キャピラリ１１０を
片当たり状態で使用していると、キャピラリ１１０の先
端部が、図５に示すように、特に、その一次側のエッジ
部１１０ｅの損耗が甚だしくなるが、ある程度使用した
後には、キャピラリ１１０の向きを１８０°変換して使
用することにより、キャピラリ１１０の使用期間を延長
することができる。By the way, as described above, the lead pins 10
5, when the capillary 110 is used in a one-sided state by inclining the tip surface 105a of the capillary 5, the tip of the capillary 110, as shown in FIG. However, after using the capillary 110 to a certain extent, the use period of the capillary 110 can be extended by changing the direction of the capillary 110 by 180 °.

【００３１】図６は異なる実施形態を示し、この場合、
ステム搭載面１０１ａに、同一方向に向けて一対の導体
レーザチップ１０２が設けられ、かつ、その両側に、そ
れぞれ二次側の圧着点が配列されている。この場合に
も、それぞれのリードピン１０５の先端面１０５ａは、
一次側とは反対側に向けて所定の角度αだけ傾斜され、
図示は省略するが、各ステッチ部では、キャピラリの一
次側のエッジ部によって、金属ワイヤが確実に捕捉さ
れ、安定した押圧力を作用させ、二次側の圧着強度を充
分に得ることができる。なお、図６にて、矢印はキャピ
ラリの打ち込み方向を示し、一点鎖線はキャピラリの中
心線を示す。FIG. 6 shows a different embodiment, in which
A pair of conductive laser chips 102 are provided on the stem mounting surface 101a in the same direction, and secondary-side crimping points are arranged on both sides thereof. Also in this case, the tip surface 105a of each lead pin 105 is
It is inclined by a predetermined angle α toward the side opposite to the primary side,
Although illustration is omitted, in each stitch portion, the metal wire is securely captured by the primary edge portion of the capillary, a stable pressing force is applied, and a sufficient crimp strength on the secondary side can be obtained. In FIG. 6, the arrow indicates the driving direction of the capillary, and the dashed line indicates the center line of the capillary.

【００３２】図７（Ａ）（Ｂ）は別の実施形態を示し、
この場合、２つの半導体レーザチップが、その電極面が
同一向きとなるように離間して配置され、その中間部に
設定されたリード側が共有されている。その共有のリー
ドピン１０５の先端面１０５ａが、その中央部を境とし
てその両側が内側に向けて角αだけ傾斜して対向しあう
２つのテーパ面１０５ｔ，１０５ｔからなるように加工
（切削加工または成形加工）を施し、その各テーパ面１
０５ｔに、それぞれ安定強固なステッチ１０９を形成で
きるようにしている。なお、図６にて、矢印はキャピラ
リの打ち込み方向を示し、一点鎖線はキャピラリの中心
線を示す。FIGS. 7A and 7B show another embodiment.
In this case, the two semiconductor laser chips are arranged so as to be separated from each other so that their electrode surfaces are oriented in the same direction, and the lead side set at the intermediate portion is shared. Processing (cutting or forming) such that the shared distal end surface 105a of the lead pin 105 is formed of two tapered surfaces 105t, 105t that face each other with the center portion as a boundary, with both sides inclined inward by an angle α toward the inside. Processing), and each tapered surface 1
At 05t, it is possible to form stably and firmly stitches 109 respectively. In FIG. 6, the arrow indicates the driving direction of the capillary, and the dashed line indicates the center line of the capillary.

【００３３】[0033]

【発明の効果】以上の説明で明らかなように、本発明
は、以下のような効果を奏する。As is apparent from the above description, the present invention has the following effects.

【００３４】請求項１によれば、リードピンの先端面
を、前記半導体レーザチップの電極面に対して、その半
導体レーザチップの電極面とは反対側に向けて所定の角
度だけ傾斜させているので、キャピラリの先端部の一次
側のエッジ部分を、金属ワイヤに対して、従来よりも強
く押圧させることができ（押圧力の逃げを抑制して）、
従来よりも長さと厚みの大きいステッチが形成され、二
次側の圧着強度が顕著に向上し、剥離等のトラブルの発
生を防ぐことができる。According to the first aspect, the tip surface of the lead pin is inclined by a predetermined angle with respect to the electrode surface of the semiconductor laser chip toward the opposite side to the electrode surface of the semiconductor laser chip. The primary edge portion of the tip of the capillary can be pressed more strongly against the metal wire than before (by suppressing the escape of the pressing force),
A stitch having a length and thickness larger than before is formed, the press-bonding strength on the secondary side is significantly improved, and occurrence of troubles such as peeling can be prevented.

【００３５】また、上述のように、リードピンの先端面
が、キャピラリに対して、押圧力の逃げを抑制できるよ
うな片当たり状態で対応するので、金属ワイヤに対して
常に安定した押圧力を作用させることができ、ボンディ
ング性（作業性）が顕著に向上し、その他のボンディン
グ作業の条件が大幅に緩和され、金属ワイヤの二次側が
「跳ねる」ようなトラブルの発生が低減され、装置の稼
働効率を顕著に向上させることができ、生産性を顕著に
向上させることができる。Further, as described above, since the tip end surface of the lead pin responds to the capillary in a one-sided state in which the escape of the pressing force can be suppressed, a stable pressing force always acts on the metal wire. The bonding property (workability) is remarkably improved, other bonding conditions are greatly relaxed, the occurrence of troubles such as "bounce" of the secondary side of the metal wire is reduced, and the operation of the apparatus is reduced. Efficiency can be significantly improved, and productivity can be significantly improved.

【００３６】請求項２によれば、共通のリードピンの先
端面を、その中央部がやや凹むように対向しあう２つの
テーパ面からなるように形成するので、その各テーパ面
において、キャピラリの先端部の一次側のエッジ部分
を、金属ワイヤに対して、従来よりも強く押圧させ（押
圧力の逃げを抑制して）、従来よりも強く押圧させるこ
とができ（押圧力の逃げを抑制して）、従来よりも長さ
と厚みの大きいステッチが形成され、二次側の圧着強度
が顕著に向上し、剥離等のトラブルの発生を防ぐことが
できる。According to the second aspect of the present invention, the leading end surface of the common lead pin is formed to have two tapered surfaces that face each other so that the central portion thereof is slightly depressed. The edge of the primary side of the portion can be pressed more strongly against the metal wire than before (by suppressing the escape of the pressing force), and can be pressed more strongly than before (by suppressing the escape of the pressing force). ), A stitch having a length and a thickness larger than those of the conventional art is formed, the press-bonding strength on the secondary side is significantly improved, and occurrence of troubles such as peeling can be prevented.

【００３７】また、上述のように、リードピンの先端面
が、キャピラリに対して、押圧力の逃げを抑制できるよ
うな片当たり状態で対応するので、金属ワイヤに対して
常に安定した押圧力を作用させることができ、ボンディ
ング性（作業性）が顕著に向上し、その他のボンディン
グ作業の条件が大幅に緩和され、金属ワイヤの二次側が
「跳ねる」ようなトラブルの発生が低減され、装置の稼
働効率を顕著に向上させることができ、生産性を顕著に
向上させることができる。Further, as described above, since the tip end surface of the lead pin corresponds to the capillary in a one-sided state in which the escape of the pressing force can be suppressed, a stable pressing force is always applied to the metal wire. The bonding property (workability) is remarkably improved, other bonding conditions are greatly relaxed, the occurrence of troubles such as "bounce" of the secondary side of the metal wire is reduced, and the operation of the apparatus is reduced. Efficiency can be significantly improved, and productivity can be significantly improved.

【００３８】請求項３によれば、リードピンの先端面の
角度を２°〜５°に設定することにより、金属ワイヤに
対して、充分な押圧力を安定的に作用させることがで
き、二次側の圧着強度を安定に確保することができ、製
品品質の安定化を図ることができる。According to the third aspect, by setting the angle of the tip surface of the lead pin to 2 ° to 5 °, a sufficient pressing force can be stably applied to the metal wire, It is possible to stably secure the crimp strength on the side, and to stabilize product quality.

【００３９】請求項４によれば、特に、構成上の変更や
別部材の付加を伴うことなく、作業性よく二次側の圧着
強度を充分に得られる安定した高品質の半導体レーザ装
置を安価に提供することができる。According to the fourth aspect of the present invention, a stable and high-quality semiconductor laser device capable of sufficiently obtaining the crimp strength on the secondary side with good workability without changing the configuration or adding another member is inexpensive. Can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の一実施形態にかかる半導体レーザ装置
およびそのワイヤボンディング法を説明するための構成
説明図である。FIG. 1 is a configuration diagram illustrating a semiconductor laser device and a wire bonding method thereof according to an embodiment of the present invention.

【図２】同装置の要部拡大説明図である。FIG. 2 is an enlarged explanatory view of a main part of the apparatus.

【図３】同リードピン先端面にキャピラリによって形成
される打痕を従来と比較して示した説明図である。FIG. 3 is an explanatory view showing a dent formed by a capillary on the tip surface of the lead pin in comparison with a conventional one.

【図４】同ステッチの大きさを従来と比較した示した説
明図である。FIG. 4 is an explanatory view showing the size of the stitch in comparison with a conventional one.

【図５】同キャピラリのエッジ部での損耗を示す説明図
である。FIG. 5 is an explanatory diagram showing wear at an edge portion of the capillary.

【図６】同異なる実施形態の要部説明図である。FIG. 6 is an explanatory view of a main part of the different embodiment.

【図７】同別の実施形態の要部説明図である。FIG. 7 is an explanatory view of a main part of another embodiment.

【図８】同（従来と共通の）半導体レーザ装置の全体構
成の一例を示す分解斜視図である。FIG. 8 is an exploded perspective view showing an example of the entire configuration of the semiconductor laser device (common with the conventional one).

【図９】金属ワイヤの引っ張りテストの説明図である。FIG. 9 is an explanatory diagram of a tensile test of a metal wire.

【図１０】従来のワイヤボンディング法の説明図であ
る。FIG. 10 is an explanatory diagram of a conventional wire bonding method.

【図１１】同要部拡大説明図である。FIG. 11 is an enlarged explanatory view of the main part.

【符号の説明】[Explanation of symbols]

１０２−半導体レーザチップ １０２ａ−電極面 １０５−リードピン １０５ａ−先端面 １０５ｔ−テーパ面 １０６−金属ワイヤ 102-semiconductor laser chip 102a-electrode surface 105-lead pin 105a-tip surface 105t-taper surface 106-metal wire

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 半導体レーザチップの電極面上に、ボー
ルボンディング法により、金属ワイヤの一次側を熱圧着
し、次いで、その二次側を、ステッチボンディング法に
より、リードピンの先端面に熱圧着する半導体レーザ装
置のワイヤボンディング法において、 リードピンの先端面を、半導体レーザチップの電極面に
対して、その半導体レーザチップの電極面とは反対側に
向けて所定の角度αだけ傾斜させ、その先端面に、金属
ワイヤの二次側を熱圧着することを特徴とする半導体レ
ーザ装置のワイヤボンディング法。1. A primary side of a metal wire is thermocompression-bonded to an electrode surface of a semiconductor laser chip by a ball bonding method, and a secondary side thereof is thermocompression-bonded to a tip surface of a lead pin by a stitch bonding method. In a wire bonding method of a semiconductor laser device, a tip surface of a lead pin is inclined with respect to an electrode surface of a semiconductor laser chip by a predetermined angle α toward a side opposite to an electrode surface of the semiconductor laser chip. And bonding the secondary side of the metal wire by thermocompression bonding. 【請求項２】 半導体レーザチップの電極面上に、ボー
ルボンディング法により、金属ワイヤの一次側を熱圧着
し、次いで、その二次側を、ステッチボンディング法に
より、リードピンの先端面に熱圧着する半導体レーザ装
置のワイヤボンディング法において、 ２つの半導体レーザチップを、その電極面が同一向きと
なるように離間させて配置すると共に、その両半導体レ
ーザチップの中間に、共通のリードピンを配置し、 そのリードピンの先端面を、その中央部を境としてその
両側が内側に向けて所定の角度αだけ傾斜して対向しあ
う２つのテーパ面からなるように形成し、 その各テーパ面に、それぞれ最も近い半導体レーザチッ
プの電極面と接続された金属ワイヤの二次側を熱圧着す
ることを特徴とする半導体レーザ装置のワイヤボンディ
ング法。2. A primary side of a metal wire is thermocompression-bonded to an electrode surface of a semiconductor laser chip by a ball bonding method, and a secondary side thereof is thermocompression-bonded to a tip surface of a lead pin by a stitch bonding method. In the wire bonding method of a semiconductor laser device, two semiconductor laser chips are arranged so as to be separated from each other so that their electrode surfaces are in the same direction, and a common lead pin is arranged between the two semiconductor laser chips. The leading end surface of the lead pin is formed so that two sides thereof are inclined inward at a predetermined angle α toward the inside with the center part as a boundary, and are opposed to each other, and are closest to the respective tapered surfaces. A wire bond for a semiconductor laser device, wherein a secondary side of a metal wire connected to an electrode surface of a semiconductor laser chip is thermocompression bonded. Packaging method. 【請求項３】 前記所定の角度αを、２°〜５°に設定
してなることを特徴とする請求項１または２に記載の半
導体レーザ装置のワイヤボンディング法。3. The wire bonding method for a semiconductor laser device according to claim 1, wherein the predetermined angle α is set to 2 ° to 5 °. 【請求項４】 請求項１ないし３のいずれかに記載の半
導体レーザ装置のワイヤボンディング法により、半導体
レーザチップの電極面とリードピンの先端面とを金属ワ
イヤで電気的に接続してなることを特徴とする半導体レ
ーザ装置。4. A semiconductor laser device according to claim 1, wherein the electrode surface of the semiconductor laser chip and the tip surface of the lead pin are electrically connected by a metal wire. Characteristic semiconductor laser device.
JP2000367701A 2000-12-01 2000-12-01 Semiconductor laser device and its wire-bonding method Pending JP2002171020A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000367701A JP2002171020A (en) 2000-12-01 2000-12-01 Semiconductor laser device and its wire-bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000367701A JP2002171020A (en) 2000-12-01 2000-12-01 Semiconductor laser device and its wire-bonding method

Publications (1)

Publication Number Publication Date
JP2002171020A true JP2002171020A (en) 2002-06-14

Family

ID=18838080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000367701A Pending JP2002171020A (en) 2000-12-01 2000-12-01 Semiconductor laser device and its wire-bonding method

Country Status (1)

Country Link
JP (1) JP2002171020A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010024442A1 (en) * 2008-08-29 2010-03-04 京セラ株式会社 Circuit board, image forming device, thermal head and image sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010024442A1 (en) * 2008-08-29 2010-03-04 京セラ株式会社 Circuit board, image forming device, thermal head and image sensor
JP5114569B2 (en) * 2008-08-29 2013-01-09 京セラ株式会社 Circuit board, image forming apparatus, thermal head, and image sensor
US8525040B2 (en) 2008-08-29 2013-09-03 Kyocera Corporation Circuit board and its wire bonding structure

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