JP2002145677A - Jointed body of silicon carbide sintered compact, member for producing semiconductor using the same and method of producing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a jointed body of SiC sintered compacts being the jointed body whose jointing strength is always high. SOLUTION: SiC sintered compacts 1 and 2, each obtained by pressureless sintering and having a bulk density of >=2.8 g/cm3 are jointed to each other through a jointing part 3 comprising Si and filling parts 4 and 5 comprising Si which is filled in open pores 1a and 2a opening to the jointing face of the SiC sintered compacts and being unified with the Si at the jointing part 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a joined body of sintered SiC (silicon carbide) (SiC ceramics), a member for producing a semiconductor such as a surface plate and an etcher chamber using the same, and a method of producing the same.

[0002]

2. Description of the Related Art Conventionally, as a bonded body of this type of SiC sintered body, 2 to 40 wt% of Si and 60 to 98 wt% of SiC have been used.
(Japanese Patent Application Laid-Open No. 6-128046) is known in which reaction-sintered SiC sintered bodies each containing Si are joined via a joint made of Si. The bonded body of the SiC sintered body is manufactured by applying Si powder to a bonding surface of the reaction sintered SiC sintered bodies, heat-treating the same in a non-oxidizing atmosphere such as an argon gas atmosphere, and then gradually cooling to room temperature. Things.

[0003]

However, the conventional SiC
In the joined body of the sintered body and the method of manufacturing the same, there is a problem that the joining strength of the joined body changes depending on the surface condition of the joining surface such as the surface roughness. This is because the bonding surface requires a certain degree of accuracy, and in particular, as the bonding area increases, the flatness becomes more important. However, in the case of a simple Si bonding, the bonding is performed using the bonding materials Si and SiC. It is considered that this is caused by wetting of the sintered body with the bonding surface, and if the processing accuracy of the bonding surface is increased, the surface state also changes, thereby causing variation in bonding strength.

Accordingly, an object of the present invention is to provide a bonded body of a SiC sintered body which can always be a bonded body having a high bonding strength, a semiconductor manufacturing member using the same, and a manufacturing method thereof.

[0005]

Means for Solving the Problems In order to solve the above problems, the bonded body of the SiC sintered body of the present invention has a bulk density of 2.8 g /
A pressure-sintered SiC sintered body having a size of ³ cm or more is filled into a joint portion made of Si and an open pore opening in a joining surface of the pressure-sintered SiC sintered body, and a filling portion made of Si integrated with the joint portion Characterized by being joined via

[0006] A member for manufacturing a semiconductor is characterized by utilizing a joined body of the above-described SiC sintered body.

On the other hand, a method of manufacturing a bonded SiC sintered body is such that Si is placed on a bonded surface of a normal pressure sintered SiC sintered body having a bulk density of 2.8 g / cm ³ or more, and a non-oxidizing atmosphere or a vacuum atmosphere is used. After the heat treatment at a temperature equal to or higher than the melting point of Si, the heat treatment is performed at a temperature equal to or higher than the melting point of Si in a non-oxidizing atmosphere or a vacuum atmosphere by interposing Si between the bonding surfaces of the normal pressure sintered SiC sintered bodies. Features. The Si is preferably in the form of plate, granule or powder.

In the bonded body of the Si sintered body and the method of manufacturing the same, Si as a bonding material has a footing effect (anchor effect) due to Si as a filler filled in open pores opened on a bonding surface. Will have.

The bulk density of the normal pressure sintered SiC sintered body is 2.8 g / cm.
^If it is less than ³ , Si as a bonding material during the bonding heat treatment
Is sucked into the pores of the normal pressure sintered SiC sintered body together with the Si as the filler filled in the open pores opened to the joint surface, making the joining difficult. The bulk density of the normal pressure sintered SiC sintered body is preferably 3.0 g / cm ³ or more.

[0010] The atmosphere is made non-oxidizing or vacuum because S
This is to prevent oxidation of i. As the non-oxidizing atmosphere, an argon gas, a nitrogen gas, a helium gas or the like is used, and as the vacuum atmosphere, a vacuum of 0.01 Torr or less is used.

When the heat treatment temperature is lower than the melting point of Si,
Filling of open pores opened to the joint surface without Si melting
Joining becomes difficult. The temperature above the melting point of Si is 1
450-1600 ° C is preferred, 1480-1500 ° C
Is more preferred.

The thickness of the plate-like Si is preferably 0.1 to 0.5 mm, more preferably 0.2 to 0.3 mm. The particle size of the granular Si is preferably 0.05 to 0.2 mm, and 0.0
More preferably, it is 5 to 0.1 mm. Granular Si is mixed with ethanol and used as a paste. Powdery Si
Is preferably from 0.1 to 10 μm, more preferably from 1 to 5 μm. The powdery Si is mixed with ethanol and used as a slurry.

In the above-mentioned semiconductor manufacturing member, a normal pressure sintered SiC sintered body is bonded to each other by using a filler and a bonding material made of Si having a footing effect. Impurity contamination by the filler and the bonding material is remarkably reduced.

If a bonding material other than Si is used, the bonding material itself becomes an impurity in a semiconductor manufacturing process, and the bonding material becomes a normal pressure sintered S
By diffusing as an impurity into the structure of the iC sintered body, when the joined body is actually used in a semiconductor manufacturing process, a semiconductor substrate such as a silicon wafer is contaminated and the yield is reduced.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to specific examples and comparative examples. Examples 1 to 3 First, the bulk density was 2.8 g / cm ³ (Example 1), 2.9 g / cm ^3
3 (Example 2) and 3.1 g / cm ³ of a normal pressure sintered SiC sintered body (100 × 200 × 20 mm), on which a granular Si having a particle diameter of 0.05 mm was mixed with ethanol. Then, a paste was applied and heat-treated at 1500 ° C. for 0.5 hour in a vacuum atmosphere of 0.01 Torr. After the heat treatment, Si was filled in the open pores opened on the joint surface of each normal pressure sintered SiC sintered body. Next, a plate-like Si having a thickness of 0.02 mm is interposed between bonding surfaces of the normal-pressure sintered SiC sintered bodies having the same bulk density, and 0.5 mm at a temperature of 1500 ° C. in a vacuum atmosphere of 0.01 Torr. After the heat treatment for an hour, the mixture was gradually cooled to room temperature to obtain a bonded body of each normal pressure sintered SiC sintered body.

The joint four-point bending strength (JIS-R1624) of the obtained joint body of each normal pressure sintered body SiC sintered body is shown in FIG.
As shown in FIG. 5, 150 MPa (Example 1), 170 MPa (Example 2), and 200 MPa at a temperature of 1000 ° C.
(Example 3). Further, when the cross section of the joined body of each normal pressure sintered SiC sintered body was observed, as shown in FIG. Open holes 1a, 2a opened in the joint surfaces of the pressure-sintered SiC sintered bodies 1, 2 are filled and joined to the joint 3 via filling portions 4 and 5 made of Si.

Comparative Examples 1 to 3 The bulk density was 2.8 g / cm ³ (Comparative Example 1), 3.0 g / cm ³
(Comparative Example 2) and a normal pressure sintered body of 3.1 g / cm ³ (Comparative Example 3) A 0.02 mm-thick plate-like member is formed between joining surfaces of SiC sintered bodies (100 × 200 × 20 mm). With Si interposed, 0.
0.1 ° C. at a temperature of 1500 ° C. in a vacuum atmosphere of 01 Torr.
After the heat treatment for 5 hours, the temperature was gradually cooled to room temperature. In the case of Comparative Example 1, Si was sucked into the pores of the normal pressure sintered SiC sintered body and could not be joined. A conjugate was obtained. Four-point bending strength (JISR) of the obtained joints of the normal pressure sintered SiC sintered bodies of Comparative Examples 2 and 3
1624) were 150 MPa (Comparative Example 2) and 160 MPa (Comparative Example 3) at a temperature of 1000 ° C.

In each of the embodiments described above, the case where the heat treatment for melting the granular or plate-like Si is performed in a vacuum atmosphere is described, but the heat treatment may be performed in a non-oxidizing atmosphere such as argon gas or nitrogen gas. Similar effects were obtained. In addition, Si as a filler and a bonding material was not limited to a granular or plate-like material, and the same effect was obtained even when a powdery material was used.

On the other hand, the same normal pressure sintered Si as in Examples 1 to 3 was used.
A bonded body of the C sintered body is used as a surface plate as a semiconductor manufacturing member,
When used as an etcher chamber or the like, contamination of the semiconductor substrate by such chambers was significantly reduced.

[0020]

As described above, according to the bonded SiC sintered body and the method of manufacturing the same according to the present invention, Si as a bonding material is used as a filler filled in open pores opened on a bonding surface. Since Si has a footing effect, it can always have a higher bonding strength than the conventional one.

On the other hand, according to the semiconductor manufacturing member using the above-mentioned bonded body, contamination of impurities by the filler and the bonding material is remarkably reduced, so that the yield of the semiconductor substrate can be improved.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram showing the relationship between the bulk density of a normal pressure sintered SiC sintered body and the joining strength of the joined body in the joined body of SiC sintered bodies according to the present invention.

FIG. 2 is a schematic view showing a joint in a joined body of a SiC sintered body according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Normal pressure sintered SiC sintered compact 1a Open pore 2 Normal pressure sintered SiC sintered compact 2a Open pore 3 Joint 4 Filling part 5 Filling part

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Masahiko Ichijima 30 Soya, Hadano-shi, Kanagawa F-term in the development laboratory of Toshiba Ceramics Co., Ltd. 4G026 BA14 BB14 BC01 BD14 BF01 BF42 BF44 BG02 BG23 BH06 5F004 AA14 AA15 BB29

Claims (4)

[Claims] Atmospheric pressure sintered Si having a bulk density of 2.8 g / cm ³ or more.
Joints of C sintered bodies made of Si and normal pressure sintered SiC
What is claimed is: 1. A bonded body of a Si sintered body, which is filled in open pores opened on a bonding surface between the sintered bodies and is bonded to the bonding part via a filling part made of Si. 2. A member for manufacturing a semiconductor, wherein the bonded member of the SiC sintered body according to claim 1 is used. ^3. An atmospheric pressure sintered Si having a bulk density of 2.8 g / cm ³ or more.
After placing Si on the bonding surface of the C sintered body and performing a heat treatment at a temperature equal to or higher than the melting point of Si in a non-oxidizing atmosphere or a vacuum atmosphere, Si is interposed between the bonding surfaces of the normal pressure sintered SiC sintered bodies, A method for producing a joined body of SiC sintered bodies, wherein heat treatment is performed at a temperature equal to or higher than the melting point of Si in a non-oxidizing atmosphere or a vacuum atmosphere. 4. The method for producing a bonded SiC sintered body according to claim 3, wherein said Si is in the form of a plate, a particle, or a powder.