JP2001163680A - JOINED BODY OF SiC SINTERED COMPACT, MEMBER FOR PRODUCING SEMICONDUCTOR USING THE SAME AND METHOD OF PRODUCING THE MEMBER - Google Patents
JOINED BODY OF SiC SINTERED COMPACT, MEMBER FOR PRODUCING SEMICONDUCTOR USING THE SAME AND METHOD OF PRODUCING THE MEMBERInfo
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＳｉＣ（炭化珪
素）焼結体（ＳｉＣセラミックス）の接合体、それを利
用した定盤、エッチャー用チャンバ等の半導体製造用部
材及びその製造方法に関する。The present invention relates to a bonded body of a sintered body of SiC (silicon carbide) (SiC ceramics), a semiconductor manufacturing member using the same, such as a surface plate, an etcher chamber, and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】従来、この種のＳｉＣ焼結体の接合体と
しては、２〜４０ｗｔ％のＳｉと６０〜９８ｗｔ％のＳ
ｉＣを含有する反応焼結ＳｉＣ焼結体同士がＳｉからな
る接合部を介して接合されているものが知られている
（特開平６−１２８０４６号公報参照）。このＳｉＣ焼
結体の接合体は、反応焼結ＳｉＣ焼結体同士の接合面に
Ｓｉ粉末を塗布し、アルゴンガス雰囲気等の非酸化性雰
囲気において熱処理した後、室温まで徐冷して製造され
る。2. Description of the Related Art Conventionally, as a bonded body of this type of SiC sintered body, 2 to 40 wt% of Si and 60 to 98 wt% of S
It is known that a reaction-sintered SiC sintered body containing iC is joined via a joint made of Si (see Japanese Patent Application Laid-Open No. 6-128046). The bonded body of the SiC sintered body is manufactured by applying Si powder to a bonding surface between the reaction sintered SiC sintered bodies, performing a heat treatment in a non-oxidizing atmosphere such as an argon gas atmosphere, and then gradually cooling to room temperature. You.
【０００３】[0003]
【発明が解決しようとする課題】しかし、従来のＳｉＣ
焼結体の接合体及びその製造方法では、接合体の接合強
度が、表面粗さ等の接合面の表面状態により変化する不
具合がある。これは、接合面は、ある程度の精度が必要
であり、特に、接合面積が大きくなればなるほど、平坦
度が重要となるが、単純なＳｉ接合であると、接合は接
合材であるＳｉとＳｉＣ焼結体の接合面との濡れによっ
て生じているため、接合面の加工精度を上げるとその表
面状態も変わるので、接合強度にばらつきを生じてしま
うからと考えられる。そこで、本発明は、常に高接合強
度の接合体とし得るＳｉＣ焼結体の接合体、それを利用
した半導体製造用部材、及びその製造方法を提供するこ
とを目的とする。However, the conventional SiC
In the joined body of the sintered body and the method of manufacturing the same, there is a problem that the joining strength of the joined body changes depending on the surface condition of the joining surface such as the surface roughness. This is because the bonding surface requires a certain degree of accuracy, and in particular, as the bonding area increases, the flatness becomes more important. However, in the case of a simple Si bonding, the bonding is performed using the bonding materials Si and SiC. It is considered that this is caused by wetting of the sintered body with the bonding surface, and if the processing accuracy of the bonding surface is increased, the surface state also changes, thereby causing variation in bonding strength. Accordingly, an object of the present invention is to provide a bonded body of a SiC sintered body that can always be a bonded body having a high bonding strength, a member for manufacturing a semiconductor using the bonded body, and a manufacturing method thereof.
【０００４】[0004]
【課題を解決するための手段】前記課題を解決するた
め、本発明のＳｉＣ焼結体の接合体は、嵩密度３．０ｇ
／ｃｍ3 以上の常圧焼結ＳｉＣ焼結体同士が嵩密度３．
０ｇ／ｃｍ3 以上のＳｉＣからなる接合部を介して接合
されていることを特徴とする。又、半導体製造用部材
は、上記ＳｉＣ焼結体の接合体を利用したことを特徴と
する。Means for Solving the Problems In order to solve the above problems, the bonded body of the SiC sintered body of the present invention has a bulk density of 3.0 g.
2 / cm 3 or more normal pressure sintered SiC sintered bodies have a bulk density of 3.
It is characterized by being joined via a joint made of SiC of 0 g / cm 3 or more. Further, the semiconductor manufacturing member is characterized in that a joined body of the above-described SiC sintered body is used.
【０００５】第１のＳｉＣ焼結体の接合体の製造方法
は、嵩密度３．０ｇ／ｃｍ3 以上の常圧焼結ＳｉＣ焼結
体の接合面をハロゲンガス雰囲気において熱処理し、接
合面表層のＳｉを揮散させた後、常圧焼結ＳｉＣ焼結体
同士の接合面間にＳｉを介在して非酸化性雰囲気又は真
空中においてＳｉの融点以上の温度で熱処理することを
特徴とする。又、第２のＳｉＣ焼結体の接合体の製造方
法は、第１の製造方法において、前記Ｓｉが、板状、粒
状又は粉状であることを特徴とする。[0005] The first method for manufacturing a bonded body of SiC sintered body is as follows: a bonding surface of a normal pressure sintered SiC sintered body having a bulk density of 3.0 g / cm 3 or more is heat-treated in a halogen gas atmosphere, and After evaporating Si, heat treatment is performed at a temperature equal to or higher than the melting point of Si in a non-oxidizing atmosphere or vacuum with Si interposed between bonding surfaces of the normal pressure sintered SiC sintered bodies. Further, a second method for manufacturing a bonded body of SiC sintered bodies is characterized in that, in the first manufacturing method, Si is in a plate shape, a granular shape, or a powder shape.
【０００６】接合部をＳｉＣからなるものとすることに
より、常圧焼結ＳｉＣ焼結体同士がそれらと同一組成の
接合部によって接合された接合体となる。[0006] By forming the joint portion from SiC, a normal pressure sintered SiC sintered body is joined by a joint portion having the same composition as the normal pressure sintered SiC sintered body.
【０００７】常圧焼結ＳｉＣ焼結体の嵩密度が、３．０
ｇ／ｃｍ3 未満であると、接合材が常圧焼結ＳｉＣ焼結
体の気孔中に吸収されてしまい、接合体の接合強度が低
下する。接合部のＳｉＣの嵩密度が、３．０ｇ／ｃｍ3
未満であると、接合部の強度が低下する。好ましい常圧
焼結ＳｉＣ焼結体と接合部のＳｉＣの嵩密度は、３．１
０ｇ／ｃｍ3 以上である。[0007] The bulk density of the normal pressure sintered SiC sintered body is 3.0
If it is less than g / cm 3 , the joining material will be absorbed into the pores of the normal pressure sintered SiC sintered body, and the joining strength of the joined body will decrease. The bulk density of SiC at the joint is 3.0 g / cm 3
If it is less than the above, the strength of the joint decreases. Preferably, the bulk density of the normal pressure sintered SiC sintered body and the SiC at the joint is 3.1
0 g / cm 3 or more.
【０００８】常圧焼結ＳｉＣ焼結体同士がＳｉＣからな
る接合部を介して接合された接合体を半導体製造用部材
に利用することにより、接合体による不純物汚染が格段
に低減される。[0008] By using a bonded body in which the normal pressure sintered SiC sintered bodies are bonded to each other via a bonding portion made of SiC as a member for semiconductor production, impurity contamination by the bonded body is remarkably reduced.
【０００９】常圧焼結ＳｉＣ焼結体の接合面をハロゲン
ガス雰囲気において熱処理することにより、常圧焼結Ｓ
ｉＣ焼結体の接合面表層は、ＳｉとＣに分解する。分解
したＳｉ分は、Ｈ又はＣｌと結合しガス化して揮発し、
Ｃも一部ガス化するが大部分は接合面表面に残る。そし
て、接合面表層のＳｉを揮散させた常圧焼結ＳｉＣ焼結
体同士の接合面間にＳｉを介在して非酸化性雰囲気又は
真空中においてＳｉの融点以上の温度で熱処理すること
により、融解したＳｉと接合面表面に残っているＣとが
反応して新たにＳｉＣを生成し常圧焼結ＳｉＣ焼結体同
士を接合する。又、ＳｉＣの分解は、粒界から進行する
ため、分解後の接合面表面は適度に粗らくなっており、
ここに融解したＳｉが浸み込み、アンカー効果によって
接合がより強固になる。[0009] By heat-treating the bonding surface of the normal pressure sintered SiC sintered body in a halogen gas atmosphere, the normal pressure sintered
The bonding surface surface layer of the iC sintered body is decomposed into Si and C. The decomposed Si component combines with H or Cl to gasify and volatilize,
C also partially gasifies, but most remains on the surface of the joint surface. Then, by performing a heat treatment at a temperature equal to or higher than the melting point of Si in a non-oxidizing atmosphere or in a vacuum by interposing Si between the bonding surfaces of the normal pressure sintered SiC sintered bodies in which Si of the bonding surface surface layer is volatilized, The melted Si and C remaining on the surface of the bonding surface react to generate new SiC and bond the normal pressure sintered SiC sintered bodies together. In addition, since the decomposition of SiC proceeds from the grain boundaries, the surface of the bonding surface after decomposition is appropriately rough,
The melted Si infiltrates here, and the bonding becomes stronger due to the anchor effect.
【００１０】常圧焼結ＳｉＣ焼結体の嵩密度が、３．０
ｇ／ｃｍ3 未満であると、接合材であるＳｉが融解した
とき、常圧焼結ＳｉＣ焼結体に吸い込まれ接合に寄与し
なくなる。好ましい常圧焼結ＳｉＣ焼結体の嵩密度は、
３．１０ｇ／ｃｍ3 以上である。[0010] The bulk density of the normal pressure sintered SiC sintered body is 3.0
When it is less than g / cm 3 , when Si as a bonding material is melted, it is sucked into a normal pressure sintered SiC sintered body and does not contribute to bonding. The bulk density of a preferable normal pressure sintered SiC sintered body is as follows:
3.10 g / cm 3 or more.
【００１１】ハロゲンガスとしては、ＨＣｌやＣｌ2 等
が用いられる。ハロゲンガス雰囲気における熱処理温度
は、１５００〜２０００℃である。熱処理温度が、１５
００℃未満であると、ＳｉＣの分解が遅く、長時間の処
理が必要となる。一方、２０００℃を超えると、ＳｉＣ
の分解が進み過ぎて接合面に限らず、劣化が著しくな
り、精度も低下する。As the halogen gas, HCl, Cl 2 or the like is used. The heat treatment temperature in a halogen gas atmosphere is 1500 to 2000 ° C. Heat treatment temperature is 15
If the temperature is lower than 00 ° C., the decomposition of SiC is slow, and a long-time treatment is required. On the other hand, when the temperature exceeds 2000 ° C., SiC
Is excessively decomposed, and the deterioration is remarkable not only at the joint surface, but also the accuracy is lowered.
【００１２】非酸化性雰囲気としては、アルゴンガスや
窒素ガス、ヘリウムガス等が用いられ、又、真空雰囲気
としては、０．０１Ｔｏｒｒ以下の真空が用いられる。As the non-oxidizing atmosphere, argon gas, nitrogen gas, helium gas or the like is used, and as the vacuum atmosphere, a vacuum of 0.01 Torr or less is used.
【００１３】接合材としてＳｉを用いるのは、それ以外
の接合材では、それ自体が半導体製造プロセスにおいて
不純物になること、接合の際の熱処理時に、接合材が被
接合部材としての常圧焼結ＳｉＣ焼結体の組織内に不純
物として拡散してしまい、接合体を実際に半導体製造プ
ロセスにおいて使用した場合、シリコンウエハ等の半導
体基板を汚染して歩留まりを低下させてしまうためであ
る。The reason why Si is used as a joining material is that other joining materials themselves become impurities in a semiconductor manufacturing process, and that the joining material is subjected to normal pressure sintering as a member to be joined during heat treatment at the time of joining. This is because they are diffused as impurities in the structure of the SiC sintered body, and when the bonded body is actually used in a semiconductor manufacturing process, the semiconductor substrate such as a silicon wafer is contaminated and the yield is reduced.
【００１４】Ｓｉの融点以上の温度としては、１４５０
〜１６００℃が好ましく、より好ましい温度は、１４８
０〜１５００℃である。The temperature above the melting point of Si is 1450
To 1600 ° C., more preferably 148 ° C.
0 to 1500 ° C.
【００１５】板状のＳｉは、厚み０．１〜０．５ｍｍの
ものが好ましく、より好ましい厚みは、０．２〜０．３
ｍｍである。粒状のＳｉは、粒径０．０５〜０．２ｍｍ
のものが好ましく、より好ましい粒径は、０．０５〜
０．１ｍｍであり、エタノールと混合してペースト状と
して用いる。粉状のＳｉは、粒径０．１〜１０μｍのも
のが好ましく、より好ましい粒径は、１〜５μｍであ
り、エタノールと混合してスラリー状として用いる。The plate-like Si preferably has a thickness of 0.1 to 0.5 mm, more preferably 0.2 to 0.3 mm.
mm. Granular Si has a particle size of 0.05 to 0.2 mm
Are preferable, and the more preferable particle size is 0.05 to
0.1 mm, and used as a paste by mixing with ethanol. The powdery Si preferably has a particle size of 0.1 to 10 μm, more preferably 1 to 5 μm, and is used as a slurry by mixing with ethanol.
【００１６】[0016]
【発明の実施の形態】以下、本発明の実施の形態につい
て具体的な実施例、比較例を参照して説明する。 実施例 先ず、嵩密度３．１ｇ／ｃｍ3 の常圧焼結ＳｉＣ焼結体
（１００×２００×２０ｍｍ）の接合面をＨＣｌガス雰
囲気において１７００℃の温度で６０分間熱処理し、接
合面表層のＳｉＣを軽く分解させた。この処理により、
接合面表層の厚み５０μｍに及んでＳｉが揮散され、ポ
ーラス状のＣが厚み４０μｍに及んで残った。次に、常
圧焼結ＳｉＣ焼結体の接合面間に厚み０．２ｍｍのＳｉ
板を介在して０．０１Ｔｏｒｒの真空中において１５０
０℃の温度で０．５時間熱処理した後、室温まで徐冷し
て常圧焼結ＳｉＣ焼結体の接合体を得た。上記処理によ
り、融解したＳｉと接合面表面に残っているＣとが反応
し、新たに嵩密度３．１ｇ／ｃｍ3 のＳｉＣが生成さ
れ、接合部が常圧焼結ＳｉＣ焼結体と同一組成のＳｉＣ
焼結体となっていた。得られた常圧焼結ＳｉＣ焼結体の
接合体の接合４点曲げ強度（ＪＩＳ Ｒ１６２４）は、
室温で２００ＭＰａ以上、１０００℃の温度で２１０Ｍ
Ｐａであった。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to specific examples and comparative examples. Example First, the joint surface of a normal pressure sintered SiC sintered body (100 × 200 × 20 mm) having a bulk density of 3.1 g / cm 3 was heat-treated at a temperature of 1700 ° C. for 60 minutes in an HCl gas atmosphere to form a surface layer of the joint surface. The SiC was slightly decomposed. With this process,
Si was volatilized to a thickness of 50 μm of the surface layer of the bonding surface, and porous C remained to a thickness of 40 μm. Next, a 0.2 mm thick Si is applied between the joining surfaces of the normal pressure sintered SiC sintered body.
150 in a vacuum of 0.01 Torr through a plate
After heat treatment at a temperature of 0 ° C. for 0.5 hour, the resultant was gradually cooled to room temperature to obtain a bonded body of a normal pressure sintered SiC sintered body. By the above treatment, the molten Si reacts with the C remaining on the surface of the bonding surface to newly generate SiC having a bulk density of 3.1 g / cm 3 , and the bonding portion is the same as the normal pressure sintered SiC sintered body. Composition SiC
It was a sintered body. The joint four-point bending strength (JIS R1624) of the obtained joint body of the normal pressure sintered SiC sintered body is:
200MPa or more at room temperature, 210M at 1000 ° C
Pa.
【００１７】比較例１ 嵩密度３．１ｇ／ｃｍ3 の常圧焼結ＳｉＣ焼結体（１０
０×２００×２０ｍｍ）の接合面間に厚み０．０２ｍｍ
のＳｉ板を介在して０．０１Ｔｏｒｒの真空中において
１５００℃の温度で０．５時間熱処理した後、室温まで
徐冷して常圧焼結ＳｉＣ焼結体の接合体を得た。得られ
た常圧焼結ＳｉＣ焼結体の接合体の接合４点曲げ強度
（ＪＩＳ Ｒ１６２４）は、室温で１４５ＭＰａ以上、
１００℃の温度で１５０ＭＰａであった。Comparative Example 1 A normal pressure sintered SiC sintered body having a bulk density of 3.1 g / cm 3 (10
0x200x20mm) 0.02mm thickness between joining surfaces
After heat treatment at 1500 ° C. for 0.5 hour in a vacuum of 0.01 Torr with the Si plate interposed therebetween, the resultant was gradually cooled to room temperature to obtain a bonded body of a normal pressure sintered SiC sintered body. The joint four-point bending strength (JIS R1624) of the obtained joint body of the normal pressure sintered SiC sintered body is 145 MPa or more at room temperature.
It was 150 MPa at a temperature of 100 ° C.
【００１８】比較例２ 嵩密度２．９ｇ／ｃｍ3 の常圧焼結ＳｉＣ焼結体（１０
０×２００×２０ｍｍ）の接合面間に厚み０．２ｍｍの
Ｓｉ板を介在して０．０１Ｔｏｒｒの真空中において１
５００℃の温度で０．５時間熱処理した後、室温まで徐
冷したところ、融解したＳｉが常圧焼結ＳｉＣ焼結体の
気孔中に吸収されてしまい、接合できなかった。Comparative Example 2 A normal pressure sintered SiC sintered body having a bulk density of 2.9 g / cm 3 (10
0 × 200 × 20 mm) with a 0.2 mm thick Si plate interposed between the joining surfaces in a vacuum of 0.01 Torr.
After a heat treatment at a temperature of 500 ° C. for 0.5 hour and then slowly cooled down to room temperature, the melted Si was absorbed into the pores of the normal pressure sintered SiC sintered body and could not be joined.
【００１９】なお、上述した実施例においては、Ｓｉ板
を融解させる熱処理を真空中で行う場合について説明し
たが、アルゴンガスや窒素ガス等の非酸化性雰囲気で行
っても同様の作用効果が得られた。又、接合材としての
Ｓｉは、板状のものに限らず、ペースト状とした粒状の
Ｓｉやスラリー状とした粉状のＳｉを用いても同様の作
用効果が得られた。In the above-described embodiment, the case where the heat treatment for melting the Si plate is performed in a vacuum is described. However, the same operation and effect can be obtained by performing the heat treatment in a non-oxidizing atmosphere such as an argon gas or a nitrogen gas. Was done. In addition, the same effect can be obtained by using not only plate-shaped Si as the bonding material but also granular Si made into a paste or powdery Si made into a slurry.
【００２０】一方、実施例と同様の常圧焼結ＳｉＣ焼結
体の接合体を半導体製造用部材としての定盤、エッチャ
ー用チャンバ等として用いたところ、それらによる半導
体基板の汚染を格段に低減することができた。On the other hand, when a bonded body of a normal pressure sintered SiC sintered body similar to that of the embodiment is used as a surface plate, an etcher chamber, and the like as a member for manufacturing a semiconductor, contamination of a semiconductor substrate by these is remarkably reduced. We were able to.
【００２１】[0021]
【発明の効果】以上説明したように、本発明のＳｉＣ焼
結体の接合体とその製造方法によれば、常圧焼結ＳｉＣ
焼結体同士がそれらと同一組成の接合部によって接合さ
れた接合体となるので、従来のものに比べ、常に高接合
強度のものとすることができる。又、上記接合体を利用
した半導体製造用部材によれば、接合体による不純物汚
染が発生しないので、この部材による半導体基板の汚染
を格段に低減することができる。As described above, according to the bonded body of the SiC sintered body of the present invention and the method of manufacturing the same, the normal pressure sintered SiC
Since the sintered bodies are joined by joining parts having the same composition as the sintered bodies, it is possible to always have a higher joining strength than the conventional one. Further, according to the member for manufacturing a semiconductor using the above-mentioned joined body, no impurity contamination occurs due to the joined body, so that contamination of the semiconductor substrate by this member can be remarkably reduced.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 露木 龍也 神奈川県秦野市曽屋30番地 東芝セラミッ クス株式会社開発研究所内 Ｆターム(参考） 4G026 BA14 BB14 BC01 BD08 BF01 BF42 BF43 BG02 BG04 BG23 BG25 BH13 5F004 AA16 BB29 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tatsuya Tsukiki 30 Soya, Hadano-shi, Kanagawa F-term in Development Laboratory, Toshiba Ceramics Co., Ltd. 4G026 BA14 BB14 BC01 BD08 BF01 BF42 BF43 BG02 BG04 BG23 BG25 BH13 5F004 AA16 BB29
Claims (4)
ＳｉＣ焼結体同士が嵩密度３．０ｇ／ｃｍ3 以上のＳｉ
Ｃからなる接合部を介して接合されていることを特徴と
するＳｉＣ焼結体の接合体。1. A bulk density 3.0 g / cm 3 or more atmospheric sintering SiC sintered bodies have a bulk density 3.0 g / cm 3 or more Si
A bonded body of a SiC sintered body, which is bonded via a bonding part made of C.
利用したことを特徴とする半導体製造用部材。2. A member for manufacturing a semiconductor, wherein the bonded member of the SiC sintered body according to claim 1 is used.
ＳｉＣ焼結体の接合面をハロゲンガス雰囲気において熱
処理し、接合面表層のＳｉを揮散させた後、常圧焼結Ｓ
ｉＣ焼結体同士の接合面間にＳｉを介在して非酸化性雰
囲気又は真空中においてＳｉの融点以上の温度で熱処理
することを特徴とするＳｉＣ焼結体の接合体の製造方
法。3. A bonding surface of a normal-pressure sintered SiC sintered body having a bulk density of 3.0 g / cm 3 or more is subjected to a heat treatment in a halogen gas atmosphere to volatilize Si on a surface of the bonding surface.
A method for manufacturing a bonded body of SiC sintered bodies, characterized in that Si is interposed between bonding surfaces of the iC sintered bodies and heat-treated at a temperature equal to or higher than the melting point of Si in a non-oxidizing atmosphere or vacuum.
ことを特徴とする請求項３記載のＳｉＣ焼結体の接合体
の製造方法。4. The method for producing a bonded SiC sintered body according to claim 3, wherein said Si is in the form of a plate, a particle, or a powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35118999A JP2001163680A (en) | 1999-12-10 | 1999-12-10 | JOINED BODY OF SiC SINTERED COMPACT, MEMBER FOR PRODUCING SEMICONDUCTOR USING THE SAME AND METHOD OF PRODUCING THE MEMBER |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35118999A JP2001163680A (en) | 1999-12-10 | 1999-12-10 | JOINED BODY OF SiC SINTERED COMPACT, MEMBER FOR PRODUCING SEMICONDUCTOR USING THE SAME AND METHOD OF PRODUCING THE MEMBER |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001163680A true JP2001163680A (en) | 2001-06-19 |
Family
ID=18415665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35118999A Pending JP2001163680A (en) | 1999-12-10 | 1999-12-10 | JOINED BODY OF SiC SINTERED COMPACT, MEMBER FOR PRODUCING SEMICONDUCTOR USING THE SAME AND METHOD OF PRODUCING THE MEMBER |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001163680A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009196861A (en) * | 2008-02-22 | 2009-09-03 | Sumitomo Electric Ind Ltd | Method for producing member using silicon carbide |
| WO2011043426A1 (en) | 2009-10-09 | 2011-04-14 | 信越化学工業株式会社 | Silicon carbide joined body and method for joining silicon carbide members |
-
1999
- 1999-12-10 JP JP35118999A patent/JP2001163680A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009196861A (en) * | 2008-02-22 | 2009-09-03 | Sumitomo Electric Ind Ltd | Method for producing member using silicon carbide |
| WO2011043426A1 (en) | 2009-10-09 | 2011-04-14 | 信越化学工業株式会社 | Silicon carbide joined body and method for joining silicon carbide members |
| CN102574745A (en) * | 2009-10-09 | 2012-07-11 | 信越化学工业株式会社 | Silicon carbide joined body and method for joining silicon carbide members |
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