JP2002134558A - Semiconductor device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device that does not cause peeling or an electrical connection failure between a chip and a board even if the semiconductor chip size is large, and to provide a method for manufacturing the semiconductor device. SOLUTION: After the semiconductor chip 4 is bonded to a wiring board 11 through an anisotropic conductive film (ACF) 3, a reinforcing material 7 is arranged in the proximity of the top surface of the anisotropic conductive film (ACF) 3 and the corners of a chip 4 housing 41 arranged on the top surface of this film 3. Since this reinforcing material 7 is arranged so as to have a stress dispersion shape typified by a fillet shape, even if a flexural stress is acted on the semiconductor device, this stress is dispersed by the reinforcing material, and stress concentration to the corners of the semiconductor chip 4 can be prevented, whereby connection failures between the semiconductor chip 4 and the wiring board 11 can be prevented in advance.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device,
More specifically, the present invention relates to a flip-chip type semiconductor device manufactured by a flip-chip mounting method and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, as one of the semiconductor devices, a flip chip in which a semiconductor chip is directly connected to a substrate via an anisotropic conductive film (hereinafter sometimes abbreviated as “ACF”) is provided. Semiconductor devices are widely manufactured.

FIG. 12 is a diagram showing a manufacturing process of a typical flip-chip type semiconductor device. In this manufacturing process, first, as shown in FIG.
The gold ball bump 102 is formed on one electrode. On the other hand, one surface of the circuit board 104 including the electrode 105 has a diameter of 3 to
A resin film 103 containing 5 μm conductive particles, that is, a plastic particle surface plated with a metal such as nickel or gold, is temporarily compressed and fixed, and the gold ball bump 102 and the electrode 105 of the circuit board 104 are aligned. Perform

Next, the semiconductor bare chip 101 is pressed and heated toward the circuit board 104 to harden the ACF 103, so that the circuit board 10
Thus, a semiconductor device in which the electrode 4 and the electrode 105 are electrically connected is obtained.

[0005]

However, this ACF1
03 is a temperature cycle in which 300 cycles between −55 ° C. and 125 ° C. are performed, although the adhesion strength of the resin and the hardness after curing are not significantly deteriorated even when moisture is absorbed in a high temperature and high humidity environment. When the test is performed, warping occurs due to the difference in linear thermal expansion coefficient of each member, and peeling occurs between the semiconductor bare chip 101 and the ACF 103 as shown in FIG. There is a problem that the connection with the terminal 105 is broken.

Although a temperature cycle test using a relatively small semiconductor bare chip test piece measuring 8 mm × 8 mm in length and width does not cause any problem, a large test piece such as 1
When a 6 mm × 16 mm semiconductor bare chip test piece is used, as shown in FIG.
There is a problem that the peeling occurs between the ACF 103 and the ACF 103 and the connection between the gold ball bump 102 and the electrode 105 of the circuit board 104 is broken with a 100% probability.

It is known that this connection destruction occurs at the corner of the semiconductor chip where the deformation due to the warp is maximum. Therefore, in order to prevent this phenomenon, the gold ball bump formed on the semiconductor bare chip is placed 2 mm from the end of the corner.
Although proposals have been made to form the gold ball bumps on the inner side as described above, there is a problem in that when the formation positions of the gold ball bumps are limited, usable semiconductors are restricted and improvement in the degree of integration is hindered.

The present invention has been made to solve the above-mentioned conventional problems. That is, the present invention provides a semiconductor device or a semiconductor device in which peeling between the chip and the substrate does not occur even when the size of the semiconductor chip is increased, and in which electrical connection failure between the chip and the substrate does not occur. It is an object to provide a method for manufacturing a semiconductor device.

[0009]

According to the present invention, there is provided a semiconductor device comprising:
An insulating substrate, a wiring layer provided on the insulating substrate, an anisotropic conductive film layer provided on the wiring layer, and a semiconductor provided on the anisotropic conductive film layer A chip, an electrode plate disposed on the semiconductor chip, a gold ball bump for conducting the wiring layer and the electrode plate in the anisotropic conductive film layer, the anisotropic conductive film layer, A reinforcing member provided between the corner portion of the semiconductor chip and the stress-dispersing shape.

[0010] The method of manufacturing a semiconductor device according to the present invention further comprises a step of forming a wiring layer on an insulating substrate, a step of forming an anisotropic conductive film layer on the wiring layer, and a step of forming an electrode plate on the semiconductor chip. Forming a gold ball bump on the electrode plate; aligning a wiring layer on the insulating substrate with the electrode plate on a semiconductor chip; and Heating the semiconductor chip under pressure to penetrate the gold ball bumps through the anisotropic conductive film and connecting the wiring layer and the electrode plate; and A step of applying a reinforcing member between the conductive member and the conductive film; and a step of curing the reinforcing member.

In the above invention, the stress-dispersed shape refers to a shape capable of dispersing a stress acting between the anisotropic conductive film and the semiconductor chip, and specifically, a fillet-shaped vertical shape. A shape showing a cross section is exemplified.

Here, the "fillet type" refers to a concavely concave curve that smoothly connects two orthogonal straight lines, for example, an arc or a parabolic concave shape.

In the above invention, as an example of the stress dispersion type shape, when viewed from directly above, the planar shape has a center angle of 270 around a corner of the anisotropic conductive film layer.
The fan shape of the degree is mentioned.

In the above invention, it is preferable that the reinforcing member is formed of a material having the same physical properties as the anisotropic conductive film.

In the above invention, the reinforcing member may be integrated with the anisotropic conductive film.

In the above invention, the reinforcing member may be constituted by a frame-shaped concave portion formed on an upper part of the anisotropic conductive film.

In the above invention, the reinforcing member may be a member disposed between an upper surface of the anisotropic conductive film and a side surface of the semiconductor chip.

In the above invention, the reinforcing member may be formed integrally with the anisotropic conductive film.

In the above invention, the anisotropic conductive member has a concave portion to be fitted to the semiconductor chip, and the reinforcing member is disposed in a gap between the anisotropic conductive film and the semiconductor chip. May be.

In the present invention, since a reinforcing member having a stress-dispersive shape is provided between the anisotropic conductive film and the corner of the semiconductor chip, bending stress is applied to the semiconductor chip and the anisotropic conductive film. Prevents the stress from concentrating on the corners of the ceramics, thereby preventing the electrical connection between the wiring layer and the electrode plate from being broken.

In the case where the reinforcing member has a fillet-shaped vertical cross section or a fan-shaped planar shape having a center angle of 270 degrees centering on a corner of the semiconductor chip,
Since the stress that tends to concentrate on the corner of the semiconductor chip can be dispersed, the concentration of stress on the corner of the semiconductor chip can be effectively prevented, and the gap between the wiring layer and the electrode plate can be effectively pulled. Electrical connections are prevented from breaking.

When the reinforcing member is formed of a material having the same physical property value as the anisotropic conductive film, or when the reinforcing member is integrated with the anisotropic conductive film, the reinforcing member and the anisotropic conductive film are reinforced. Since stress does not easily act between members, stress that tends to concentrate on corners of the semiconductor chip can be more effectively dispersed.

When the reinforcing member is constituted by a frame-shaped concave portion formed on the upper part of the anisotropic conductive film, the labor for forming the reinforcing member can be omitted.

When the reinforcing member is formed integrally with the anisotropic conductive film, the labor for forming the reinforcing member can be omitted.

The anisotropic conductive member has a frame-shaped concave portion to be fitted to the semiconductor chip, and the reinforcing member is disposed in a gap between the anisotropic conductive film and the semiconductor chip. In that case, it can be easily processed.

[0026]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A semiconductor device according to a first embodiment of the present invention will be described below.

FIG. 1 is a flowchart showing the manufacturing process of the semiconductor device according to the present embodiment, and FIGS. 2 to 4 are vertical sectional views of the semiconductor device according to the present embodiment in the course of manufacturing.

In order to manufacture the semiconductor device according to the present embodiment, first, as shown in FIG. 2A, a copper-clad board 10 having a copper foil 2 laminated on an insulating board 1 is prepared. After masking (not shown) is performed on the copper foil 2 of the stretched substrate 10, patterning is performed by an etching process or the like (Step 1) to form the wiring substrate 11 having the wiring layer 21 formed on the insulating substrate 1. .

Next, an anisotropic conductive film (ACF) 3 is temporarily pressed on the surface of the wiring board 11 on which the wiring layer 21 is formed (Step 2), and a laminate 12 is obtained. The anisotropic conductive film (ACF) 3 is obtained by dispersing conductive fine particles in a thermosetting insulating resin such as an epoxy resin.

Examples of the anisotropic conductive film include TJ107-50 (trade name) manufactured by Sony Chemical Co., Ltd., FC-262B (trade name) and FC-212B (trade name) manufactured by Hitachi Chemical Co., Ltd. And the like.

Next, the semiconductor chip 4 is positioned with respect to the laminated body 12 (step 3).

The semiconductor chip 4 has an integrated circuit (not shown) built in a housing 41 made of ceramic, and has an electrode plate 5 provided on the lower surface side of the housing 41.
, And the integrated circuit are internally connected. Also, gold ball bumps 6, 6,... Are formed on the electrode plates 5, 5,.

When the positioning is completed so that the electrode plates 5, 5,... Of the semiconductor chip 4 face the wiring pattern of the wiring layer 21, pressure is applied by a heated press to perform heating and pressing simultaneously (step). 4).

The heat generated during the pressing softens the ACF 3. In this state, the gold ball bumps 6, 6,... Penetrate the ACF 3 because the gold ball bumps 6, 6,. Gold ball bumps penetrating ACF3 6, 6, ...
Some directly contact the wiring layer 21, and some of the gold ball bumps 6, 6,...
Indirectly contact with the wiring layer 21 via 1,. In the laminate 13 thus obtained, the gold ball bumps 6,
, And the conductive layers 31, 31, and further, the electrode plates 5, 5, ... and the wiring layers 21, 21, ... are electrically connected. In addition, ACF3 is cured by heat during pressing,
A cured laminate 13 is obtained.

Next, the reinforcing member 7 is applied between the corners of the semiconductor chip 4 and the upper surface of the ACF 3 in the laminate 13 (Step 5). The reinforcing member 7 applied at this time preferably has the same physical property value as the resin constituting the ACF 3 finally cured. If the final physical property values are different between the reinforcing member 7 and the ACF 3, stress acts on the interface between the reinforcing member 7 and the ACF 3.

The reinforcing member 7 is formed so as to have a stress distribution type shape. Here, the “stress-dispersed shape” refers to a shape capable of dispersing stress acting between the anisotropic conductive film and the semiconductor chip. Specifically, a shape showing a vertical cross section of a fillet type as shown in FIG. 3 can be given. Here, the “fillet type” refers to a concavely concave curve that smoothly connects two orthogonal straight lines, for example, an arc or a parabolic concave shape.

In order to form the reinforcing member 7 into this fillet type shape, for example, a liquid corner type uncured resin paste is used as the reinforcing member 7 and the chip corner portion of the laminate 13 (position as shown in FIG. 4). A method of applying the resin manually by using a dispenser, and then curing the epoxy main material in the resin paste by reacting with a curing agent in a 125 ° C. oven. In this method, the fillet shape is formed naturally by viscous flow of the resin.

In order to form the reinforcing member 7, for example, it is preferable to use an anisotropic conductive paste (model number: TAP-0211C) manufactured by Toshiba Chemical Corporation. As a material for forming the reinforcing member 7, a material having physical properties as close as possible to ACF3, such as a coefficient of linear expansion, a Young's modulus, and a glass transition temperature (Tg), is desirable.

As described above, in the semiconductor device according to the present embodiment, the ceramic housing 4 of the semiconductor chip is used.
Since the reinforcing member 7 having a fillet-shaped cross-sectional shape is disposed between the corner portion of the ceramic housing 41 and the upper surface of the ACF 3, even when a bending stress is applied to the semiconductor device, the stress is adjacent to the corner portion of the ceramic housing 41 and the adjacent portion. Concentration with the upper surface of the ACF 3 is prevented. As a result, separation of the semiconductor chip 4 from the ACF 3 is prevented, and the connection reliability between the electrode plates 5, 5,... And the wiring layers 21, 21,.

The reinforcing member 7 having a fillet shape disperses the stress concentrated on the anisotropic conductive film (ACF) 3 containing the conductive particles at the corners of the semiconductor chip 4 to disperse the stress on the semiconductor chip 4 and the anisotropic conductive film. The separation of the interface with (ACF) 3 was prevented.

The size of the semiconductor chip is length × width = 1.
Flip-chip mounting using a semiconductor chip having a size of 6 mm × 16 mm or more and an electrode plate disposed at a corner portion of the semiconductor chip within a distance of 2 mm or less from the corner portion of the semiconductor chip. The reliability of the bump connection is improved, and the bump connection can be made practical.

(Embodiment) As shown in FIG. 2, length × width = 16 m
A gold ball bump 6 having a diameter of 65 μm and a height of 80 μm was formed on the electrode plate 5 of the semiconductor bare chip 4 having a size of m × 16 mm and a thickness of 625 μm.

On the other hand, a BT resin material (Tg = 180
° C, coefficient of linear expansion = 1.5 × 10 ⁻⁵ / ° C, Young's modulus =
Anisotropic conductive film (ACF) 3 (model number: TJ107, Sony Chemical Inc.) containing conductive particles on one surface including wiring layer 21 made of nickel-gold plated copper on insulating substrate 1 made of 2.4 × 10 ⁴ MPa) Manufactured, Tg = 144 ° C,
Linear expansion coefficient = 2.8 × 10 ⁻⁵ / ° C., Young's modulus = 4 × 1
0 ³ MPa) is fixed by temporary compression bonding, the above-mentioned gold ball bumps 6 are aligned with the wiring layer 21 of the insulating substrate 1, and then the semiconductor bare chip 4 is pressed against the insulating substrate 1 while heating. By curing the anisotropic conductive film (ACF) 3 containing conductive particles by the above method, a flip-chip connection by the gold ball bumps 6 as shown in FIG. 2E was formed.

After the flip-chip connection using the ACF 3 shown in FIG. 2E is performed, a liquid resin (model number: TAP-0) is applied to the corners of the semiconductor chip 4 as shown in FIGS.
211C, manufactured by Toshiba Chemical Co., Ltd., Tg = 145 ° C., coefficient of linear expansion 3.7 × 10 ⁻⁵ / ° C., Young's modulus = 8.5 × 10 ³
MPa, viscosity = 80 Pas) and apply at 125 ° C. for 15
The resin was cured by heating for a time to form a fillet-shaped reinforcing member 7. FIG. 4 is a view of the semiconductor device as viewed from above. When the test piece was put into a temperature cycle test after forming the reinforcing member 7, it was found that the connection could be maintained. The average value of the connection resistance at the initial stage (N = 64) was 2.5 mΩ per bump, but after the test was 7.9 mΩ, and a good result was obtained.

(Comparative Example) On the other hand, as described above,
When it is put into a temperature cycle test of 5 ° C./−55° C./300 cycles, warpage occurs as shown in FIG.
A connection failure occurred on a 16 mm × 16 mm semiconductor bare chip after the test was completed. In addition, the connection failure occurred at the corner of the semiconductor chip where the change in shape due to warpage was the largest. For this reason, it is necessary to provide a restricted area where no gold ball bump is formed at the corner of the semiconductor bare chip, and its length L is required to be 2 mm or more, and the type and size of the semiconductor that can be used are greatly restricted. There was found.

The present invention is not limited to the above embodiment. For example, in the above embodiment, the reinforcing member 7
Is formed after the semiconductor chip 4 is fixed on the ACF 3. However, the reinforcing member 7 may be formed in advance at a position corresponding to the corner of the semiconductor chip 4 on the upper surface of the ACF 3. The reinforcing member 7 may be attached to the upper surface of the ACF 3 later.
3 may be integrally formed.

(Second Embodiment) Hereinafter, a semiconductor device according to a second embodiment of the present invention will be described. Note that, in the semiconductor device according to the present embodiment, the description of the same contents as those in the first embodiment will be omitted.

FIG. 5 is a vertical sectional view of the semiconductor device according to the present embodiment, and FIG. 6 is a plan view of the semiconductor device according to the present embodiment.

In the semiconductor device according to the present embodiment, the reinforcing member 71 is formed in a fan-shaped shape having a central angle of 270 degrees when represented in a plan view. The center of the sector is aligned with the corner of the semiconductor chip 4. A vertical cross section of the reinforcing member 71 has a fillet shape as shown in FIG.

The semiconductor device according to the present embodiment has the reinforcing member 71 having the shape shown in FIGS.
Even when a bending stress acts on the semiconductor device, the stress is prevented from being concentrated on the corner of the semiconductor chip 4. Therefore, the electrical connection between the semiconductor chip and the ACF 3 and between the electrode plate 5 and the wiring layer 21 is maintained, and a highly reliable semiconductor device can be obtained.

(Third Embodiment) In a semiconductor device according to this embodiment, a reinforcing member is formed by using a part of the ACF 3 instead of forming the reinforcing member on the upper surface of the ACF 3 later. .

FIG. 7 is a flow chart showing the manufacturing process of the semiconductor device according to the present embodiment, and FIG. 8 is a vertical sectional view showing the semiconductor device being manufactured.

To manufacture the semiconductor device according to the present embodiment, the copper-clad substrate 10 is patterned (step 1a).
The wiring board 11 is formed, and the wiring layer 21 of the wiring board 11 is formed.
The anisotropic conductive film (ACF) 3 is temporarily pressure-bonded on the surface on which is formed (Step 2a) to obtain the laminate 12.

Next, the upper surface of the ACF 3 of the laminated body 12 is machined by cutting or the like to form a concave portion 31 having a shape fitting into the outer shape of the housing 41 of the semiconductor chip 4 (step 3).
a) Next, the semiconductor chip 4 in which the gold ball bumps 6, 6,... are formed on the electrodes 5, 5,... is positioned above the ACF 3 in which the concave portion 31 is formed (step 4a), and pressurized under heating (step 4a). Step 5a).

The gold ball bumps 6, 6,...
Are penetrating the ACF 3 and the electrodes 5, 5,.
Are electrically connected. Further, the housing 41 of the semiconductor chip 4 is fitted into the concave portion 31 formed above the ACF 3 by this pressure, and the side surface of the housing 41 is
As shown in FIG. 8F, the lower portion of the housing 41 is buried in the ACF 3 as it contacts the concave portion 31 of F3.
In this state, heat acts to cure the resin constituting the ACF 3, whereby the lower portion including the corner of the housing 41 is fixed to the ACF 3. Therefore, the housing 41
This is the same state as the case where the reinforcing member 7 described in the first and second embodiments is arranged at the corner portion of FIG.

As a result, even if a bending stress acts on the semiconductor device, the stress is prevented from being concentrated on the corners of the semiconductor chip 4, the separation between the housing 41 and the ACF 3 is prevented, and the electrode plate is pulled. 5, 5,... And the wiring layers 21, 21, 21
The connection reliability between... Is improved.

According to the present embodiment, since the step of forming or hardening the reinforcing member 7 is not required, a unique effect that the number of steps can be reduced is obtained.

(Fourth Embodiment) In the semiconductor device according to the present embodiment, the concave portion 31 is not formed after the ACF 3 is press-bonded on the wiring board 11, but the concave portion is formed simultaneously with the temporary press-bonding of the ACF 3. did.

FIG. 9 is a flowchart showing the manufacturing process of the semiconductor device according to the present embodiment, and FIG. 10 is a vertical sectional view showing the semiconductor device in the course of manufacturing.

To manufacture the semiconductor device according to the present embodiment, the copper-clad substrate 10 is patterned (step 1b).
After the wiring substrate 11 is formed, as shown in FIG. 10A, the ACF 3 is disposed on the wiring substrate 11, and the pressing die 8 having a convex cross section is disposed thereon.

The pressing die 8 used here has a vertical cross section formed in a convex shape, and the size and shape of the projecting portion 81 are formed to be the same size and shape as the housing 41 of the semiconductor chip 4.

Next, the wiring board 11 is disposed at the bottom, the ACF 3 is placed thereon, and the ACF 3 is pressed with the pressing die 8 while the pressing die 8 is further placed thereon (step 2b). By this pressing, the lower surface side of the ACF 3 is temporarily pressed on the wiring board 11. At the same time, the protrusion 81 of the pressing die 8 is ACF
3 is sunk into the inside from the upper surface, resulting in the state shown in FIG.

Next, when the pressing die 8 is removed, FIG.
As shown in (c), the housing 4 of the semiconductor chip 4
A concave portion 31 having a shape that fits into the outer shape of the ACF 3 is formed on the ACF 3.

Then, the semiconductor chip 4 having the gold ball bumps 6, 6,... Formed on the electrodes 5, 5,.
b) Pressurizing under heating (step 4b).

By the pressing, the gold ball bumps 6, 6,...
Are penetrating the ACF 3 and the electrodes 5, 5,.
Are electrically connected. Further, the housing 41 of the semiconductor chip 4 is fitted into the concave portion 31 formed above the ACF 3 by this pressure, and the side surface of the housing 41 is
As shown in FIG. 8F, the lower portion of the housing 41 is buried in the ACF 3 as it contacts the concave portion 31 of F3.
In this state, heat acts to cure the resin constituting the ACF 3, whereby the lower portion including the corner of the housing 41 is fixed to the ACF 3.

Therefore, the state is the same as when the reinforcing member 7 described in the first and second embodiments is disposed at the corner of the housing 41.

As a result, even if a bending stress acts on the semiconductor device, the stress is prevented from concentrating on the corner of the semiconductor chip 4, the separation between the housing 41 and the ACF 3 is prevented, and the electrode plate is pulled. 5, 5,... And the wiring layers 21, 21, 21
The connection reliability between... Is improved.

According to the present embodiment, A
Concave portions 31 are formed at the same time as CF3 is temporarily pressed. For this reason, the step of forming the concave portion 31 after the temporary press-bonding becomes unnecessary, so that a unique effect of reducing the number of steps can be obtained.

(Fifth Embodiment) In this embodiment, AC
The recess formed on the upper surface of F3 was formed in a two-stage shape.
FIG. 11 is a vertical cross-sectional view of the semiconductor device according to the embodiment in the process of being manufactured.

As shown in FIG. 11A, in the semiconductor device according to the present embodiment, a recess 32 having a two-stage structure is formed above the ACF 3. That is, the dimension w1 of the opening of the lower part 33 of the recess is one step smaller than the dimension w2 of the opening of the upper part. The dimension w1 of the lower part 33 is the semiconductor chip 4
Of the housing 41. Therefore, when the semiconductor chip 4 is press-fitted after the semiconductor chip 4 is positioned in the concave portion 32 of the ACF 3, the semiconductor chip 4 is positioned at the bottom of the concave portion 32 as shown in FIG.
And a gap having a width d is formed between the concave portion 32 and the upper portion 34 of the concave portion 32.

As shown in FIG. 11D, by filling the gap with a reinforcing material 9, the semiconductor chip 4 and the ACF 3 are filled.
And the semiconductor chip 4 is fixed.

In the present embodiment, a recess larger in size than the semiconductor chip is provided in the ACF, and the semiconductor chip is press-fitted into the ACF. Therefore, the operation of forming the recess and press-fitting the semiconductor chip can be easily performed. The effect of is obtained.

[0073]

According to the present invention, a reinforcing member having a stress-dispersive shape is disposed between the anisotropic conductive film and the corner of the semiconductor chip. Even when a bending stress is applied to the film, the stress is prevented from being concentrated on the corners of the ceramic, and the electrical connection between the wiring layer and the electrode plate is prevented from being broken.

[Brief description of the drawings]

FIG. 1 is a flowchart of a manufacturing process of a semiconductor device according to a first embodiment.

FIG. 2 is a vertical sectional view of the semiconductor device according to the first embodiment which is being manufactured.

FIG. 3 is a vertical sectional view of the semiconductor device according to the first embodiment which is being manufactured.

FIG. 4 is a vertical sectional view of the semiconductor device according to the first embodiment in the course of manufacture.

FIG. 5 is a vertical sectional view of a semiconductor device according to a second embodiment.

FIG. 6 is a plan view of a semiconductor device according to a second embodiment.

FIG. 7 is a flowchart illustrating a manufacturing process of a semiconductor device according to a third embodiment.

FIG. 8 is a vertical sectional view showing a semiconductor device according to a third embodiment in the course of manufacture.

FIG. 9 is a flowchart illustrating a manufacturing process of a semiconductor device according to a fourth embodiment.

FIG. 10 is a vertical sectional view showing a semiconductor device according to a fourth embodiment in the course of manufacture.

FIG. 11 is a vertical sectional view showing a semiconductor device according to a fifth embodiment in the course of manufacture.

FIG. 12 is a diagram showing a manufacturing process of a conventional semiconductor device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Insulating board, 21 ... Wiring layer, 3 ... Anisotropic conductive film (ACF), 4 ... Semiconductor chip, 5 ... Electrode plate (electrode plate), 6 ... Gold ball bump, 7 ... Reinforcement member, 8 ... Push Mold, 9 ... clearance.

Claims (10)

[Claims] An insulating substrate; a wiring layer provided on the insulating substrate; an anisotropic conductive film layer provided on the wiring layer; and an anisotropic conductive film layer provided on the anisotropic conductive film layer. A semiconductor chip provided; an electrode plate provided on the semiconductor chip; a gold ball bump for electrically connecting the wiring layer and the electrode plate in the anisotropic conductive film layer; A semiconductor device, comprising: a reinforcing member provided between a conductive film layer and a corner portion of the semiconductor chip, the reinforcing member having a stress distribution type shape. 2. The semiconductor device according to claim 1, wherein:
A semiconductor device, wherein the stress dispersion type shape is a shape showing a fillet-type vertical cross section. 3. The semiconductor device according to claim 1, wherein the stress-dispersed shape is a fan-shaped planar shape having a central angle of 270 degrees around a corner of the semiconductor chip. Semiconductor device. 4. The semiconductor device according to claim 1, wherein the reinforcing member is made of a material having the same physical property value as the anisotropic conductive film. Semiconductor device. 5. The semiconductor device according to claim 1, wherein the reinforcing member is integrated with the anisotropic conductive film. 6. The semiconductor device according to claim 3, wherein the reinforcing member is formed by a frame-shaped recess formed on an upper part of the anisotropic conductive film. A semiconductor device, comprising: 7. The semiconductor device according to claim 1, wherein the reinforcing member is disposed between an upper surface of the anisotropic conductive film and a side surface of the semiconductor chip. A semiconductor device, characterized in that: 8. The semiconductor device according to claim 1, wherein the reinforcing member is formed integrally with the anisotropic conductive film. . 9. The semiconductor device according to claim 8, wherein
The anisotropic conductive member includes a frame-shaped concave portion that fits with the semiconductor chip, and the reinforcing member is disposed in a gap between the anisotropic conductive film and the semiconductor chip. Semiconductor device. 10. A step of forming a wiring layer on an insulating substrate; a step of forming an anisotropic conductive film layer on the wiring layer; a step of forming an electrode plate on a semiconductor chip; Forming a gold ball bump on a plate; aligning a wiring layer on the insulating substrate with the electrode plate on a semiconductor chip; heating the insulating substrate and the semiconductor chip under pressure Making the gold ball bumps penetrate the anisotropic conductive film and connecting the wiring layer and the electrode plate; and a reinforcing member between a corner of the semiconductor chip and the anisotropic conductive film. And a step of curing the reinforcing member.