JP2002129327A - Method and apparatus for forming thin film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus and a method for forming a thin film, which accurately control a substrate temperature giving a big influence on performance of a formed thin film at a predetermined value, and are suitable for mass production with a little performance variation. SOLUTION: A material supplying part for thin film consisting of a material for thin film and a hearth for supporting it comprises having a mechanism for cooling on a basis of flowing a cooling fluid, in the hearth, detecting a fluid temperature (Tin) of the cooling fluid in front of the hearth and a fluid temperature (Tout) at an exit, and controlling a substrate temperature during formation of the thin film at the predetermined temperature, by sending a temperature signal based on the difference of the temperature Tout and Tin to a substrate heating apparatus, to form the thin film with a constant performance.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming method and a thin film forming apparatus for providing a functional thin film having high quality without variation.

[0002]

2. Description of the Related Art In recent years, various types of functional thin films have been used for semiconductors, optical memory disks, and flat displays, and thin-film forming apparatuses such as a vacuum evaporation method and a sputtering method have been used in their manufacture. As an example of a thin film forming apparatus, FIG. 2 shows a protective layer M of a plasma display panel.
FIG. 1 is a cross-sectional configuration diagram of a vacuum evaporation apparatus used when forming gO. Substrate loading chamber 31, substrate heating chamber 3
2. It is composed of five chambers: a film forming chamber 33, a cooling chamber 34, and a substrate unloading chamber 35.
It is transported and an MgO thin film is formed in the film forming chamber 33. The electron beam guns 12 are installed on the lower wall surface of the film forming chamber 33 as an example. It is irradiated with light. As a result, the thin film raw material 3 is locally heated and heated, MgO evaporates, and an MgO thin film is formed on the substrate 1 that is transported and moved. Here, the hearth portion 4 and the thin film raw material 3 stored therein are collectively referred to as a thin film material supply source 2.

[0003]

In order to promote the growth of the MgO thin film and increase the crystallinity of the thin film, a method of forming the thin film while heating the substrate 1 has been adopted. For this reason,
A substrate heating device 5 composed of a heater is disposed in the substrate heating chamber 32 and the film forming chamber substrate 33 so as to face the substrate 1 to be conveyed, and raises the substrate temperature to a predetermined temperature.

Since the substrate temperature has a great influence on the performance of the MgO thin film, it is necessary to form the thin film by controlling the substrate temperature so that it is always the same in mass production film formation. Therefore, usually, after heating and raising the temperature to a predetermined substrate temperature in the substrate heating chamber 32, the substrate heating device 6 is operated so as to maintain the substrate temperature in the film forming chamber 33, and the thin film is deposited on the transported substrate 1. Has formed.

However, when the substrate 1 is located directly above the thin film material supply source 2 and a thin film is deposited, large heat radiation is generated from the thin film material supply source 2 by heating by electron beam irradiation. As shown in the characteristic diagram of the variation of the substrate temperature with respect to the elapsed time and the substrate position, the substrate temperature rises significantly with respect to the predetermined temperature and shows a maximum value. Since the heat radiation from the thin film material supply source 2 is greatly affected by the irradiation state of the electron beam, the state of the thin film raw material 3, and the like, the maximum value of the substrate temperature tends to vary. In addition, since the substrate temperature changes every moment as the substrate 1 is transported, it is difficult to control the temperature history of each substrate in the same manner, and this has been a factor of the fluctuation of the MgO thin film performance.

In addition, since strong light is emitted from the thin film material supply source 2 where the film formation energy is concentrated, non-contact substrate temperature measurement by infrared detection is difficult immediately above the thin film material supply source 2. This made it difficult to control the substrate temperature with high accuracy.

SUMMARY OF THE INVENTION In view of the above problems, the present invention provides a thin film forming method and a thin film suitable for mass production, in which a substrate temperature which greatly affects the performance of a thin film to be formed is controlled to a predetermined value with high accuracy. It is intended to provide a forming apparatus.

[0008]

According to a first aspect of the present invention, there is provided a thin film forming method for forming a thin film on a substrate by flying a thin film material from a thin film material supply source. The hearth portion has a cooling mechanism based on flowing a cooling fluid, detects a fluid temperature Tin before the cooling fluid enters the hearth portion and a fluid temperature Tout when the cooling fluid exits, and detects the temperature difference. Tout-Tin
By sending a temperature signal based on the
The temperature of the substrate during the formation of the thin film is controlled to a predetermined temperature.

According to a second aspect of the present invention, the cooling fluid is always introduced into the hearth at the same pressure.

According to a third aspect of the present invention, the substrate is conveyed on a track surface located opposite to a thin film material supply source.

According to a fourth aspect of the present invention, in the thin film forming method, the substrate heating device is divided in the substrate transport direction, and is disposed so as to face the track surface of the substrate to be transported.

According to a fifth aspect of the present invention, there is provided a thin film forming method, wherein a substrate temperature sensor is provided along a track surface of a substrate to be conveyed, at least immediately before a thin film material supply source in a conveying direction. The substrate heating device is controlled based on the detected substrate temperature.

According to a sixth aspect of the present invention, in the thin film forming method, the substrate temperature sensor is disposed on a non-film-forming side of the substrate, and detects infrared rays emitted from the substrate.

According to a seventh aspect of the present invention, a temperature signal based on the temperature difference Tout-Tin is sent to the substrate heating device immediately above or near the thin film material supply source. Is controlled at a predetermined temperature when the substrate is transported.

In the thin film forming method according to the present invention, the substrate heating device immediately above or near the thin film material supply source may include a temperature signal based on the temperature difference Tout-Tin and a substrate temperature detected by the substrate temperature sensor. Is sent, and the substrate temperature when the substrate is transported immediately above the thin film material supply source is controlled to a predetermined temperature.

According to a ninth aspect of the present invention, there is provided a thin film forming method wherein a thin film raw material of a thin film material supply source is irradiated with an electron beam or a plasma beam to heat and evaporate the thin film raw material.

According to a tenth aspect of the present invention, a thin film raw material is formed on a conductive hearth portion as a thin film material supply source, and DC or AC power is applied to the hearth portion to sputter evaporate the thin film raw material. Things.

According to an eleventh aspect of the present invention, there is provided a thin film forming apparatus for forming a thin film on a substrate by flying a thin film material from a thin film material supply source, wherein the thin film material supply source comprises a thin film raw material and a hearth portion supporting the thin film raw material. The hearth portion has a cooling mechanism based on flowing a cooling fluid, and the fluid temperature Tin before the cooling fluid enters the hearth portion and the fluid temperature T when the cooling fluid exits the hearth portion.
It has a cooling fluid temperature detector for detecting out, and sends a temperature signal based on the temperature difference Tout-Tin to the substrate heating device to control the substrate temperature during the thin film formation to a predetermined temperature.

In the thin film forming apparatus according to the twelfth aspect, the cooling fluid is always introduced into the hearth at the same pressure.

In the thin film forming apparatus according to a thirteenth aspect, the substrate is transported on a track surface located opposite to a thin film material supply source.

According to a fourteenth aspect of the present invention, in the thin film forming apparatus, the substrate heating device is divided in a substrate transport direction, and is arranged to face a track surface of the substrate to be transported.

According to a fifteenth aspect of the present invention, in the thin film forming apparatus, a substrate temperature sensor is provided along a track surface of a substrate to be transported at least immediately before a thin film material supply source in the transport direction. The substrate heating device is controlled based on the detected substrate temperature.

In a thin film forming apparatus according to a sixteenth aspect, the substrate temperature sensor is arranged on the non-film-forming side of the substrate, and detects infrared rays emitted from the substrate.

In the thin film forming apparatus according to the seventeenth aspect, a temperature signal based on the temperature difference Tout-Tin is sent to a substrate heating device immediately above or near the thin film material supply source, and the substrate is heated immediately above the thin film material supply source. Is controlled at a predetermined temperature when the substrate is transported.

The thin film forming method according to claim 18, wherein the substrate heating device immediately above or near the thin film material supply source has a temperature signal based on the temperature difference Tout-Tin and a substrate temperature detected by the substrate temperature sensor. Is sent, and the substrate temperature when the substrate is transported immediately above the thin film material supply source is controlled to a predetermined temperature.

The thin film forming apparatus according to the nineteenth aspect irradiates a thin film raw material of a thin film material supply source with an electron beam or a plasma beam to heat and evaporate the thin film raw material.

According to a twentieth aspect of the present invention, a thin film material is formed on a conductive hearth portion as a thin film material supply source, and DC or AC power is applied to the hearth portion to sputter vaporize the thin film material. Things.

According to the present invention, the temperature difference Tout-Tin between the inlet and the outlet of the cooling fluid flowing through the hearth portion in the thin film material supply source is detected by using the cooling fluid temperature detector, so that the substrate by heat radiation is detected. A thin film forming method and a thin film forming apparatus suitable for mass production that can maintain the substrate temperature at a predetermined temperature by obtaining a rise in temperature and feeding the signal back to the substrate heating device, with little variation in performance. can do.

[0029]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention is shown in FIG.
A description will be given based on a cross-sectional view of a configuration of a vacuum deposition apparatus for forming a gO thin film.

As in the conventional example, the vacuum deposition apparatus includes a substrate loading chamber 31, a substrate heating chamber 32, and a film forming chamber 3.
3, the cooling chamber 34, and the substrate unloading chamber 35. The substrate 1 is sequentially transported.
An electron beam gun 12 is installed on the lower wall surface of the film forming chamber 33 as an example, and the electron beam 13 is condensed from the electron beam gun 12 onto the thin film raw material 3 composed of a group of MgO crystal pellets housed in the recess of the hearth portion 4. Irradiated. As a result, the thin film raw material 3 is locally heated and heated by the electron beam, the MgO evaporates, and an MgO thin film is formed on the substrate 1 that is transported and moved. A cooling mechanism 7 based on flowing a cooling fluid is provided in the hearth portion 4 to avoid melting of the hearth portion 4 due to heating by electron beam irradiation.

A substrate heating chamber 32 which is a substrate heating area
A substrate heating device 5 composed of a heater is installed in the inside of the substrate 1 so as to face the substrate 1 to be conveyed. When the substrate 1 exits the substrate heating chamber 32, the substrate is heated to a predetermined substrate temperature. In this method, feedback is applied by the substrate temperature sensor 8 provided on the track surface of the substrate transfer to control the temperature. The substrate temperature sensor 8 detects infrared rays emitted from the substrate 1 through a hole formed in the substrate heating device 5, and can measure the substrate temperature in a non-contact manner. The substrate temperature sensor 8 is also installed in the film forming chamber 33 which is a thin film forming area,
The temperature control of the substrate heating device 6 in 3 is also performed.

However, immediately above the thin film material supply source 2, a problem arises that accurate measurement of the substrate temperature cannot be performed due to generation of heat radiation and strong light emitted from the heated thin film raw material 3. Therefore, as a means for measuring the substrate temperature of the substrate 1 conveyed at this portion in a non-contact manner, the fluid temperature before flowing into the hearth portion of the cooling fluid flowing for cooling into the hearth portion 4 constituting the thin film material supply source 2 is used. The fluid temperature Tout at the time of exiting Tin was detected, and attention was paid to a temperature signal based on the temperature difference Tout−Tin. FIG. 4 is a characteristic diagram showing the relationship between the temperature rise value ΔT of the substrate temperature due to heat radiation from the thin film material supply source 2 and the temperature difference Tout−Tin of the cooling fluid. From FIG. 4, as the temperature difference Tout−Tin of the cooling fluid increases, the temperature increase ΔT due to radiant heat increases.
ΔT can be predicted by detecting out-Tin. That is, the average value (T1 + T2) / 2 of the temperature measurement values T1 and T2 of the substrate temperature sensors 8-1 and 8-3 located in front and rear of the substrate transport direction with respect to immediately above the thin film material supply source 2, By adding the temperature rise ΔT predicted by FIG. 4, it is possible to estimate the substrate temperature including the heat radiation directly above the thin film material supply source 2, and the substrate heating device 6 directly above the thin film material supply source 2. To control the substrate temperature. At this time, the cooling fluid must always be supplied into the hearth portion 4 at the same flow rate.

Further, a method of controlling the substrate temperature in the film forming chamber 33 will be described in detail. In the film forming chamber 33 which is a thin film forming area, for example, a substrate heating device 6 divided into three units facing the substrate 1 is disposed in the substrate transport direction. Each of the divided substrate heating devices 6 can be controlled independently. Here, the three substrate temperature control devices 6 are connected to the substrate heating chamber 32 from the side of 6-1, 6-2, and 6-3.
And A substrate temperature sensor 8-1 of an infrared detection type is installed directly above the substrate heating device 6-1 with the substrate 1 interposed therebetween, and detects the substrate temperature T1 just before the vapor deposition region.
1 sends a temperature signal. Similarly, an infrared detection type substrate temperature sensor 8-3 is installed directly above the substrate heating device 6-3 to detect the substrate temperature T2 immediately after the deposition region, and
-3, and a feedback is applied so that the substrate 1 has a predetermined temperature.

The hearth portion 4 having a cooling function by flowing a cooling fluid is provided with a cooling fluid temperature detector 9 for detecting a fluid temperature Tin before the cooling fluid enters the hearth portion 4 and a fluid temperature Tout when the cooling fluid exits. Have. The substrate heating device 6-2 directly above the raw thin film material supply source 2 includes an infrared detection type substrate temperature sensor 8-1, which is installed in front and rear of the substrate conveyance direction with respect to the immediately above thin film material supply source 2, The substrate temperature T1, T2 detected by 8-3 and the temperature signal from the cooling fluid temperature detector 9, that is, the temperature difference Tout-Tin detected by the inlet and outlet of the cooling fluid flowing through the hearth portion 4.
As described above, the substrate temperature when the substrate passes just above the hearth portion 4 is predicted by the temperature signal based on the above, and a temperature signal is sent so that the substrate temperature maintains a predetermined temperature immediately above the thin film material supply source 2. .

FIG. 5 is a graph showing the transition of the substrate temperature obtained according to the present invention with respect to the location of the substrate 1 transferred in the chamber. The substrate temperature raised in the substrate heating chamber can be kept constant also in the film forming chamber. Thus, according to the present invention, FIG.
The maximum phenomenon of the substrate temperature based on the thermal radiation shown in FIG. The characteristic diagram of the relationship between the temperature rise value ΔT of the substrate temperature due to thermal radiation and the temperature difference Tout−Tin of the cooling fluid in FIG. 4 differs depending on the size of the hearth portion 4, the distance between the thin film material supply source 2 and the substrate 1, and the like. Therefore, it is necessary to determine the characteristic diagram of each film forming system in advance by experiments.

Next, an embodiment in which the present invention is applied to another film forming method will be described. FIG. 6 is a cross-sectional plan view of a sputtering apparatus used when a gate electrode Ta constituting a thin film transistor (TFT) of a liquid crystal display is formed by a sputtering method. Substrate loading chamber 3
1 (not shown), a substrate heating chamber 32, a film forming chamber 33, a cooling chamber 34, and a substrate unloading chamber 35 (not shown) are connected, and the substrate 1 is transported. The thin film raw material 3 made of a Ta target housed in the recess of the hearth portion 4 is bonded to the film forming chamber 33, and the thin film material supply source 2 is formed. A DC power source 10 is connected to the hearth portion 4 made of a conductive metal,
Is applied with a negative voltage. Ar gas is introduced into the film forming chamber 33 under reduced pressure, and Ar ions in plasma generated by application of electric power collide with the thin film raw material 3 to fly the Ta material, thereby forming a Ta thin film on the substrate 1.
A cooling mechanism 7 based on flowing a cooling fluid to the hearth portion 4
To prevent the thin film material supply source 2 from being excessively heated.

In the film forming chamber 33, as an example, a substrate heating device 6 divided into three units facing the substrate 1 is disposed in the substrate transport direction. Each of the divided substrate heating devices 6 can be controlled independently. Here, the three substrate temperature control devices 6 are 6-1 from the substrate heating chamber 32 side,
6-2 and 6-3. An infrared detection type substrate temperature sensor 8-1 is provided directly above the substrate heating device 6-1 with the substrate 1 interposed therebetween.
Is installed, the substrate temperature T1 just before the deposition region is detected, and a temperature signal is sent to the substrate heating device 6-1. Similarly, immediately above the substrate heating device 6-3, an infrared detection type substrate temperature sensor 8-
3 is installed, and the substrate temperature T2 immediately after the deposition region is detected,
A temperature signal is sent to the substrate heating device 6-3, and feedback is applied so that the substrate 1 has a predetermined temperature.

The hearth portion 4 having a cooling function by flowing a cooling fluid is provided with a cooling fluid temperature detector 9 for detecting a fluid temperature Tin before the cooling fluid enters the hearth portion 4 and a fluid temperature Tout when the cooling fluid exits. Have. Substrate heating devices 6-2 directly above the thin film material supply source 2 include infrared detection type substrate temperature sensors 8-1 and 8 installed in front and rear of the substrate conveyance direction with respect to the immediately above the thin film material supply source 2. -3 detected by the substrate temperature T1, T2, and the cooling fluid temperature detector 9
From the temperature of the cooling fluid flowing through the hearth portion 4, that is, a temperature signal based on the temperature difference Tout−Tin detected by the inlet and the outlet of the cooling fluid flowing through the hearth portion 4, the substrate temperature when the substrate passes directly above the hearth portion 4 is predicted. Is thin film material source 2
A temperature signal is sent so as to maintain a predetermined temperature even immediately above, and the substrate temperature is controlled. As described above, also in the sputtering method, the rise ΔT of the substrate temperature due to the heat radiation generated from the thin film material supply source 2 is reduced by the substrate temperature T1,
T2 and the temperature signal from the cooling fluid temperature detector 9, that is, the temperature difference Tout-Tin detected by the inlet and the outlet of the cooling fluid flowing through the hearth portion 4, and the substrate temperature can be controlled to a predetermined value. can do.

In an embodiment of the present invention, an MgO thin film,
Although a Ta thin film has been described as an example, the present invention is not limited to this, and similar effects can be obtained with other materials. Further, in the embodiment, an electron beam is described as an energy source for vapor deposition, but the present invention is not limited to this. For example, a hollow cathode type low voltage,
Similar effects can be obtained by using a high-current plasma beam or the like. Further, in the sputtering method, the case where DC power is supplied to the thin film material supply source 2 is described in the embodiment, but the present invention is not limited to this, and the same applies when using AC power such as RF. The effect is obtained.

[0040]

As described above, according to the present invention, since the film formation energy is concentrated and the substrate temperature immediately above the thin film material supply source that emits strong light can be accurately measured in a non-contact manner. During the formation, the substrate temperature, which greatly affects the performance of the thin film, can be controlled to a predetermined value with high precision, and it is possible to provide a high-quality thin film with little performance variation, and its industrial value is extremely high .

[Brief description of the drawings]

FIG. 1 is a cross-sectional configuration diagram of a vacuum deposition apparatus illustrating an embodiment according to the present invention.

FIG. 2 is a cross-sectional configuration diagram of a vacuum evaporation apparatus illustrating a conventional example.

FIG. 3 is a characteristic diagram illustrating a relationship between a substrate position and a substrate temperature in a conventional example.

FIG. 4 is a characteristic diagram showing a relationship between a temperature rise value ΔT of a substrate temperature due to thermal radiation and a temperature difference Tout−Tin of a cooling fluid according to the present invention.

FIG. 5 is a characteristic diagram illustrating a relationship between a substrate position and a substrate temperature according to the present invention.

FIG. 6 is a plan cross-sectional configuration diagram of a sputtering apparatus illustrating a second embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate 2 Thin film material supply source 3 Thin film raw material 4 Hearth part 5 Substrate heating device (in a substrate heating chamber) 6,6-1, 6-2, 6-3 Substrate heating device (in a film forming chamber) 7 Cooling mechanism 8, 8-1, 8-3 Substrate temperature sensor 9 Cooling fluid temperature detector

 ──────────────────────────────────────────────────続 き Continued from the front page (72) Inventor Kanako Miyashita 1006 Kazuma Kadoma, Kadoma-shi, Osaka Matsushita Electric Industrial Co., Ltd. F-term (reference) 4K029 BA16 BA43 BD00 BD02 CA01 DA08 DB17 DB18 DB21 DB24 EA08 KA01

Claims (20)

[Claims] 1. A thin film forming method for forming a thin film on a substrate by flying a thin film material from a thin film material supply source, wherein the thin film material supply source comprises a thin film raw material and a hearth portion supporting the thin film raw material, and the hearth portion supplies a cooling fluid. It has a cooling mechanism based on flowing, detects a fluid temperature Tin before the cooling fluid enters the hearth portion and a fluid temperature Tout when the cooling fluid exits, and determines the temperature difference Tout−T
A thin film forming method for controlling a substrate temperature during forming a thin film to a predetermined temperature by sending a temperature signal based on in to a substrate heating device. 2. The method according to claim 1, wherein the cooling fluid is always introduced into the hearth at the same fluid velocity. 3. The thin film forming method according to claim 1, wherein the substrate is conveyed on a track surface located opposite to a thin film material supply source. 4. The thin film forming method according to claim 3, wherein the substrate heating device is divided in the substrate transport direction, and is disposed so as to face a track surface of the substrate to be transported. 5. A substrate temperature sensor is provided along a track surface of a substrate to be conveyed, at least immediately before the thin film material supply source, in front and rear of the conveyance direction, and based on the substrate temperature detected by the substrate temperature sensor. 6. The thin film forming method according to claim 4, wherein the substrate heating device is controlled. 6. The thin film forming method according to claim 5, wherein the substrate temperature sensor is disposed on a non-film-forming side of the substrate, and detects infrared rays emitted from the substrate. 7. A temperature signal based on the temperature difference Tout−Tin is sent to the substrate heating device immediately above or near the thin film material supply source, and the substrate temperature when the substrate is transported immediately above the thin film material supply source is determined. 7. The method for forming a thin film according to claim 1, wherein the temperature is controlled to a predetermined temperature. 8. A temperature signal based on the temperature difference Tout−Tin and a temperature signal based on the substrate temperature detected by the substrate temperature sensor are sent to a substrate heating device immediately above or near the thin film material supply source, 8. The thin film forming method according to claim 1, wherein a substrate temperature when the substrate is transported immediately above the thin film material supply source is controlled to a predetermined temperature. 9. The method for forming a thin film according to claim 1, wherein the thin film raw material of the thin film material supply source is irradiated with an electron beam or a plasma beam to heat and evaporate the thin film raw material. 10. A thin film material is formed on a conductive hearth portion as a thin film material supply source, and DC or AC power is applied to the hearth portion to sputter evaporate the thin film material. 3. The method for forming a thin film according to item 1. 11. A thin film forming apparatus for forming a thin film on a substrate by flying a thin film material from a thin film material supply source, wherein the thin film material supply source comprises a thin film raw material and a hearth portion for supporting the thin film material, and the hearth portion supplies a cooling fluid. Has a cooling mechanism based on flowing, and a fluid temperature Tin before the cooling fluid enters the hearth.
A cooling fluid temperature detector that detects a fluid temperature Tout when the substrate exits, and sends a temperature signal based on the temperature difference Tout−Tin to the substrate heating device to control the substrate temperature during the thin film formation to a predetermined temperature. Thin film forming equipment. 12. The thin film forming apparatus according to claim 11, wherein the cooling fluid is always introduced into the hearth at the same fluid velocity. 13. The thin film forming apparatus according to claim 11, wherein the substrate is transported on a track surface located opposite to a thin film material supply source. 14. The thin film forming apparatus according to claim 13, wherein the substrate heating device is divided in a substrate transport direction, and is arranged to face a track surface of the substrate to be transported. 15. A substrate temperature sensor is provided along a track surface of a substrate to be conveyed, at least immediately before a thin film material supply source in the conveyance direction, and based on the substrate temperature detected by the substrate temperature sensor. 16. The thin film forming apparatus according to claim 14, wherein the substrate heating device is controlled. 16. The thin film forming apparatus according to claim 15, wherein said substrate temperature sensor is arranged on a non-film-forming side of the substrate and detects infrared rays emitted from the substrate. 17. A temperature signal based on the temperature difference Tout−Tin is sent to the substrate heating device immediately above or near the thin film material supply source, and the substrate temperature when the substrate is conveyed immediately above the thin film material supply source. Is controlled to a predetermined temperature.
17. The thin film forming apparatus according to any one of items 1 to 16. 18. A temperature signal based on the temperature difference Tout−Tin and a temperature signal based on the substrate temperature detected by the substrate temperature sensor are sent to a substrate heating device immediately above or near the thin film material supply source, 18. The thin film forming apparatus according to claim 11, wherein a substrate temperature when the substrate is transported immediately above the thin film material supply source is controlled to a predetermined temperature. 19. The thin film forming apparatus according to claim 11, wherein the thin film raw material of the thin film material supply source is irradiated with an electron beam or a plasma beam to heat and evaporate the thin film raw material. 20. A thin film material is formed on a conductive hearth portion as a thin film material supply source, and DC or AC power is applied to the hearth portion to sputter evaporate the thin film material. 2. The thin film forming apparatus according to 1.