JP2002124848A - Surface acoustic wave element, electronic component and its mounting method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an SAW element in which thermal shock resistance characteristics and reliability are enhanced by minimizing the effect of anisotropy in the coefficient of thermal expansion of a single crystal chip, and an electronic component incorporating the SAW element. SOLUTION: The surface acoustic wave element comprises an electrode 12 and terminal conductors 131-136 arranged on one side of a single crystal chip 11. The terminal conductors 131-136 are arranged on an imaginary oval line OV1 on one side of the single crystal chip 11. The oval line OV1 has a short diameter a in the direction of the single crystal chip 11 having a larger coefficient of thermal expansion.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device (hereinafter, referred to as a SAW device), an electronic component obtained by combining a SAW device and a substrate, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In electronic equipment, there is always a demand for miniaturization in the market, and the size and weight of components used are also required. This tendency is remarkable in high-frequency devices such as mobile phones.
This tendency is particularly noticeable.

[0003] A SAW element has an ID on the surface of a single crystal chip.
It has a structure in which a T electrode and a terminal conductor are formed, and is usually used mounted on a substrate. Conventionally, when a SAW element is mounted on a ceramic substrate, the back side of the SAW element having an IDT electrode formed on the surface is bonded and fixed to one surface of the substrate, and the IDT electrode on the surface is provided on the substrate by Au wire bonding. A method of connecting to a connection conductor has been adopted.

However, according to this method, a space for performing wire bonding is required in addition to the area of the chip, and there is a disadvantage that the size cannot be sufficiently reduced.

Therefore, for example, Japanese Patent Application Laid-Open No. 10-79638
As shown in the publication, a method called flip chip mounting is used in part. In the flip-chip mounting method, the surface of the SAW element on which the IDT electrode and the terminal conductor are formed is oriented to one surface of the substrate, and the terminal conductor of the SAW element is brought into contact with and joined to the connection conductor formed on one surface of the substrate. Therefore, it is more suitable for miniaturization than the wire bonding method.

In flip chip mounting, a ceramic substrate is used as a substrate on which a SAW element is mounted. Ceramic substrates have excellent heat resistance and chemical resistance. In addition, the metal case is joined to the ceramic substrate by means such as brazing, so that a high degree of airtightness can be secured.

[0007] Further, the ceramic substrate can form a connection conductor or a conductor layer serving as an electric circuit element on the surface or inside thereof by utilizing the electric insulation property of the ceramic substrate itself. In addition, compared with a general resin substrate, it also has features such as low high-frequency loss, good heat conduction, good dimensional accuracy, and excellent reliability.

Further, it is possible to form a multilayer structure. In ceramic multilayer boards, the inner conductor may be coiled,
Alternatively, by facing them in parallel, it is possible to form circuit elements such as inductance and capacitance therein. Moreover, since the loss is low and the dimensional accuracy is good, a circuit element having a high Q and a small tolerance can be formed inside.

[0009] These features are most utilized in obtaining high-performance and compact integrated elements, that is, modules, particularly in high-frequency circuits such as mobile phones.

However, the SAW element is a single crystal, and the coefficient of thermal expansion in the same plane greatly differs in the vertical and horizontal directions depending on the cutting direction with respect to the crystal axis. For example,
When the most common lithium tantalate is used as a single crystal chip, the thermal expansion coefficient in the vertical direction is 8 ppm / ° C., the thermal expansion coefficient in the horizontal direction is 16 ppm / ° C., and the vertical and horizontal directions are 36 ° in the cutting direction. , A difference of about twice the coefficient of thermal expansion occurs.

On the other hand, the thermal expansion coefficient of the ceramic substrate is approximately 6 pp
m / ° C., which is remarkably different from the coefficient of thermal expansion of the single crystal chip constituting the SAW element.

For this reason, especially in a direction (lateral direction) where the coefficient of thermal expansion is large, mismatch of the coefficient of thermal expansion becomes large,
When a thermal shock is applied, a large thermal stress is generated in this direction.

For example, assuming that the single crystal chip constituting the SAW element is a square chip having each side of 1 mm, when the temperature rises by 100 ° C., the single crystal chip becomes 0.8 μm vertically and horizontally. This would result in a 1.6 μm expansion in the direction. Ceramic substrate isotropically 0.6μm
extend. Due to this difference in thermal expansion, thermal stress is generated between the single crystal chip and the ceramic substrate.

In addition, when mounted on a flip chip tower,
It is necessary to adopt a structure in which a space is maintained between the surface of the SAW element on which the IDT electrode is formed and the surface of the ceramic substrate, and only the terminal conductor is connected to the connection conductor formed on the ceramic substrate. This means that the SAW element
The connection between the terminal conductor and the connection conductor means that the terminal conductor is point-bonded to the ceramic substrate, and the structure is weak against the thermal stress generated due to the difference in thermal expansion described above.

[0015] In addition, the thermal stress seen on the surface of the SAW element or the surface of the ceramic substrate has an extremely complicated distribution according to the arrangement of the terminal conductors of the SAW element and the arrangement of the connection conductors on the ceramic substrate. And the thermal stress can be extremely high at certain joints.

For this reason, in flip chip mounting,
The junction between the terminal conductor of the single crystal chip constituting the SAW element and the connection conductor provided on the ceramic substrate may be broken by thermal stress, and the function may not be exhibited.

[0017] This problem is caused by the following problems.
By selecting a material having a coefficient of thermal expansion close to that of the single crystal chip constituting the SAW element, it can be alleviated to some extent. For example, BT resin (12 ppm / ° C.) having an intermediate value of the coefficient of thermal expansion is used as the material of the substrate. In this case, the difference in the coefficient of thermal expansion is considerably reduced, but the difference depending on the direction still remains, and is not a complete measure. Moreover, in this case, the advantage of the ceramic substrate cannot be obtained.

[0018]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to reduce the influence of the anisotropy of the coefficient of thermal expansion of a single crystal chip as much as possible to improve the thermal shock resistance and reliability.
An object of the present invention is to provide a W element and an electronic component incorporating the SAW element.

Another object of the present invention is to provide a manufacturing method suitable for obtaining the above-mentioned electronic component.

[0020]

In order to solve the above-mentioned problems, the present invention discloses SAW elements according to two aspects. The SAW element according to the first aspect includes a single crystal chip,
An electrode and a plurality of terminal conductors are included. The electrode is provided on one surface of the single crystal chip. Each of the terminal conductors is provided on the one surface of the single crystal chip so as to be electrically connected to the electrode and to be placed on the same elliptical line assumed on the one surface of the single crystal chip. . The elliptical line has a minor axis in a direction in which the coefficient of thermal expansion of the single crystal chip is large.

The SAW element according to the present invention is used by being mounted on a substrate. The substrate is preferably a ceramic substrate.

In the SAW element according to the present invention, the electrodes are provided on one surface of the single crystal chip, and the terminal conductors electrically connected to the electrodes are also provided on one surface of the single crystal chip provided with the electrodes. It is provided in. Therefore, the SAW element according to the present invention can be flip-chip mounted such that one surface on which electrodes and terminal conductors are formed is opposed to one surface of the substrate, and the terminal conductors are joined to connection conductors provided on one surface of the substrate. is there.

Each of the terminal conductors is provided on one surface of the single-crystal chip so as to be placed on the same elliptical line assumed on one surface of the single-crystal chip. It has a short diameter in the direction with a large expansion coefficient. According to the arrangement of the terminal conductors, when the SAW element is flip-chip mounted on the ceramic substrate, the amount of thermal expansion at the joint between the terminal conductor and the connection conductor becomes substantially uniform from the center of the elliptical line. For this reason, the thermal stress generated due to the difference in the coefficient of thermal expansion between the single crystal chip constituting the SAW element and the ceramic substrate, despite the anisotropy of the coefficient of thermal expansion of the single crystal chip, It isotropically applied to each of the joints between the terminal conductor and the connection conductor.
Therefore, the thermal stress applied to the terminal conductor provided on one surface of the single crystal chip can be made uniform, and the thermal shock resistance can be improved.

The surface acoustic wave device according to the second aspect includes a single crystal chip, an electrode, and a plurality of terminal conductors. The electrode is provided on one surface of the single crystal chip.

Assuming a first elliptic line and a second elliptical line on the one surface of the single crystal chip, the center of the first elliptical line substantially coincides with the center of the second elliptic line; The major axis and the minor axis are smaller than those of the second elliptical line. The first and second elliptical lines have a minor axis in a direction in which the coefficient of thermal expansion of the single crystal chip is large.

Each of the terminal conductors is electrically connected to the electrode and has a center in a region between the first elliptic line and the second elliptical line.

The surface acoustic wave device according to the second aspect also has
The same operation and effect as those of the surface acoustic wave according to the first aspect are obtained.

The SAW element according to the present invention is mounted on a substrate to form an electronic component. SAW for ceramic substrate
In joining the elements, the SAW elements are arranged such that one surface on which the electrodes and terminal conductors are formed faces one surface of the substrate. On the ceramic substrate, the connection conductor is previously set to SA
At a position corresponding to the arrangement of the terminal conductors provided in the W element,
A connection conductor is formed.

Next, the terminal conductor on the SAW element is brought into contact with the connection conductor on the ceramic substrate by applying a load, and the terminal conductor and the connection conductor are connected by ultrasonic waves.

Other objects, configurations and advantages of the present invention will be described in more detail with reference to the accompanying drawings which are embodiments. The accompanying drawings are merely examples.

[0031]

FIG. 1 is a front view of an electronic component according to the present invention, and FIG. 2 is a view of a SAW element included in the electronic component shown in FIG. 1 viewed from an electrode forming surface side (a lower surface side in FIG. 1). FIG. The illustrated electronic components include a SAW element 1,
And a substrate 2. The Au metal case 3 is joined to the substrate 2 by means such as brazing, thereby ensuring a high degree of airtightness.

The SAW element 1 includes a single crystal chip 11, an electrode 12, and a plurality of terminal conductors 131 to 136. Specific examples of the single crystal chip 11 include LiNbO ₃ and LiTaO ₃ . This single crystal chip 11 is cut out to have a predetermined crystal angle.

The electrode 12 is provided on one surface of the single crystal chip 11. The electrode 12 can be used as long as it has a structure effective as the SAW element 1. Electrode 12
Are generally formed as IDT electrodes. The IDT electrode is configured as a single set or a combination of a plurality of sets connected in series or in parallel.

Each of the terminal conductors 131 to 136 is also called a stud bump, is electrically connected to the electrode 12, and is placed on the same elliptical line OV1 assumed on the IDT electrode of the single crystal chip 11. As shown, the single crystal chip 11
On top of. The elliptical line OV1 has a minor axis a in a direction in which the thermal expansion coefficient of the single crystal chip 11 is large.
The number of the terminal conductors 131 to 136 is selected according to the number of sets of the electrodes 12. The terminal conductors 131 to 136 have A
It is preferable to have a film structure in which a u film appears. Specifically, a Ni film is formed on one surface of the single crystal chip 11, and an Au film is formed thereon. Terminal conductors 131 to 13
The planar shape of 6 is arbitrary and is not limited to the illustrated shape.

In the embodiment of FIG. 1, the SAW element 1
It is mounted on the substrate 2. Substrate 2 is preferably a ceramic substrate. The advantages of using a ceramic substrate as the substrate 2 are as described above. The terminal conductor 131 provided on the SAW element 1 is provided on the ceramic substrate 2.
To 136, the same number of connection conductors 21 as the terminal conductors 131 to 136 are formed in advance. When the surfaces of the terminal conductors 131 to 136 are made of an Au film, the connection conductor 21 on the ceramic substrate 2 also
It is preferable to use a u film. Thereby, the SAW element 1
A highly reliable bonding structure by Au-Au bonding can be formed between the substrate and the ceramic substrate 2. More specifically, a sintered conductor such as Ag is formed on the surface of the ceramic substrate 2, a Ni film is formed thereon, and an Au film is formed thereon.

In the above-described SAW element 1, the electrode 12
Are provided on one surface of the single crystal chip 11, and the terminal conductors 131 to 136 electrically connected to the electrodes 12 are also provided on one surface of the single crystal chip 11 having the electrodes 12. I have. Therefore, this SAW element 1
The terminal conductors 131 to 1 are formed such that one surface on which the electrode 12 and the terminal conductors 131 to 136 are formed is opposed to one surface of the substrate 2.
Flip chip mounting can be performed in which the substrate 36 is connected to the connection conductor 21 provided on one surface of the substrate 2.

Each of terminal conductors 131 to 136 has the same elliptical line OV assumed on one surface of single crystal chip 11.
1 is provided on one surface of the single crystal chip 11. The elliptical line OV1 has a minor axis a in the direction in which the thermal expansion coefficient of the single crystal chip 11 is large. The coefficient of thermal expansion of the single crystal chip 11 is determined by the cutting direction with respect to the crystal axis. According to the arrangement of the terminal conductors 131 to 136, when the SAW element 1 is flip-chip mounted on the ceramic substrate 2, the amount of thermal expansion seen at the joint between the terminal conductors 131 to 136 and the connection conductor 21 is an elliptical line. It becomes almost uniform from the center of the ellipse of OV1. For this reason, the thermal stress generated due to the difference in the coefficient of thermal expansion between the single crystal chip 11 constituting the SAW element 1 and the ceramic substrate 2 causes the thermal expansion of the single crystal chip 11 to be anisotropic. Regardless, terminal conductor 1
It isotropically applied to each of the joints between the connection conductors 31 and 136 and the connection conductor 21. Therefore, the thermal stress applied to the terminal conductors 131 to 136 provided on one surface of the single crystal chip 11 can be made uniform, and the thermal shock resistance can be improved.

When the SAW element 1 contains lithium tantalate as a main component, the terminal conductors 131 to 13 of the SAW element 1
It is preferable that the elliptical line OV1 on which the number 6 is arranged has a ratio (a: b) of the minor axis a to the major axis b of about 1: 2.

In the embodiment, the single crystal chip 11 has a substantially quadrangular shape, and has two long sides facing each other and two
And a short side of the side. Single crystal chip 11 of this shape
In the ellipse OV1, the direction of the major axis b coincides with the direction in which the longer side extends.

FIG. 3 is a view showing a SAW element according to a second embodiment of the present invention. In FIG. 3, a first elliptical line OV11 and a second elliptical line OV
12 is assumed. The center of the first elliptical line OV11 substantially coincides with the center of the second elliptical line OV12, and the major axis b1 and the minor axis a1 are smaller than the major axis b2 and the minor axis a2 of the second elliptic line OV12. The center of each of the terminal conductors 131 to 136 has a first elliptical line OV11 and a second elliptical line OV1.
2 so as to be located in a region between the two.

Preferably, the first elliptical line OV11 has a major axis b1 whose length is about 6 times longer than the long side length L1 of the single crystal chip 11.
0%. The length of the major axis b2 of the second elliptical line OV12 is about 90% of the long side length L1 of the single crystal chip 11. With this arrangement, the influence of the anisotropy of the coefficient of thermal expansion of the single crystal chip 11 can be reduced more reliably.

The SAW element 1 shown in FIGS. 1 to 3 is mounted on a substrate 2 to be made into an electronic component. Ceramic substrate 2
When the SAW element 1 is bonded to the substrate 2, the SAW element 1 is arranged such that one surface on which the electrodes 12 and the terminal conductors 131 to 136 are formed faces one surface of the substrate 2. On one surface (mounting surface) of the ceramic substrate 2, connection conductors 21 are formed in advance at positions corresponding to the terminal conductors 131 to 136 provided in the SAW element 1.

Next, the terminal conductors 131 to 131 on the SAW element 1
136 is brought into contact with the connection conductor 21 on the ceramic substrate 2 by applying a load, and the terminal conductors 131 to 136 and the connection conductor 21 are connected by ultrasonic waves. Thus, the electronic component shown in FIG. 1 is obtained.

Next, the present invention will be described more specifically with reference to examples. Example 1 A ceramic multilayer substrate was used as the substrate 2. In a ceramic multilayer substrate, alumina. The glass composite ceramic was used as an insulating layer, and the inner conductor layer was used as 15 layers. Substrate 2 is 2m long
m, a rectangle having a width of 2.5 mm and a thickness of 0.3 mm.

The lowermost layer of the connection conductor 21 of the substrate 2 was formed of a sintered silver conductor. After the connection conductor silver paste was screen-printed on one surface of the substrate 2, the surface was pressed and flattened before sintering. On the silver sintered conductor film, a thickness of 5
A μm Ni layer and then a 0.5 μm Au layer were each formed by electroless plating.

On the other hand, the single crystal chip 11 has a long side length of 1.4.
mm, a short side length of 0.8 mm, and a thickness of 0.35 mm were formed in a square shape, and terminal conductors 131 to 136 made of Au were formed thereon. The terminal conductors 131 to 136 have the elliptical arrangement shown in FIG. The diameter of each of the terminal conductors 131 to 136 was about 50 μm before bonding and crushed to 110 μm after bonding in each of the samples A to H.

The obtained SAW element is placed at a predetermined position in a state in which the SAW element is faced down on the substrate 2, and 9 W ultrasonic waves are applied from the SAW side to the O.D. Irradiate for 6 seconds, simultaneously apply 300g load,
The terminal conductors 131 to 136 and the connection conductor 21 of the substrate 2 were joined. Then, while measuring the lateral pressing strength,
The cross section was observed with an electron microscope.

Thereafter, a thermal shock test was performed. The thermal shock test was conducted at a temperature of 140 ° C. for 30 minutes and a temperature of 85 ° C. for 30 minutes as one cycle.
It went up to the cycle. In evaluating the thermal shock test,
The insertion loss was measured, and what was about 2 dB in the initial stage was judged to be rejected when it became 5 dB or more, and the number was judged.

Comparative Example 1 For comparison with Example 1, as shown in FIG.
Terminal conductors 131 to 136 are formed on the single crystal chip 11,
A conventional sample arranged on a rectangle was prepared, and the same evaluation as the sample of Example 1 was performed.

Table 1 shows the peel strength and the number of rejects of the thermal shock test in Example 1 and Comparative Example 1 by the lateral push test. The number of failures in the thermal shock test was 1 for the thermal shock test.
This is the number in the 00 samples.

As shown in Table 1, in the case of Comparative Example 1, the peel strength was 520 (gf), and the number of rejects out of 100 was 6. However, in the sample of Example 1 according to the present invention, The peel strength was 530 (gf), the number of rejects out of 100 was 0, and results superior to Comparative Example 1 in both peel strength and thermal shock resistance were obtained.

Next, an experiment was performed on the sample according to the second embodiment. First, the single crystal chip 11 has a long side length of 1.4.
mm, a short side length of 0.8 mm, and a thickness of 0.35 mm were formed in a square shape, and terminal conductors 131 to 136 made of Au were formed thereon. At this time, samples A to H in which the positions of the terminal conductors 131 to 136 are appropriately changed are shown in FIGS. The diameter of each of the terminal conductors 131 to 136 was about 50 μm before bonding and crushed to 110 μm after bonding in each of the samples A to H.

Next, each of the samples A to H was placed at a predetermined position in a form prone to the substrate 2, and 9 W ultrasonic waves were applied from the SAW element side to the O.D. Irradiation was performed for 6 seconds, and at the same time, a load of 300 g was applied to join the terminal conductors 131 to 136 and the connection conductor 21 of the substrate 2. Thereafter, the lateral pressing strength of each of the samples A to H was measured, and the cross section was observed with an electron microscope.

Thereafter, a thermal shock test was performed. The thermal shock test was conducted at a temperature of 140 ° C. for 30 minutes and a temperature of 85 ° C. for 30 minutes as one cycle.
It went up to the cycle. In the evaluation of the thermal shock test, the insertion loss was measured, and the insertion loss was about 2 dB in the initial stage, and the one that became 5 dB or more was rejected, and the number was judged. Table 2 shows the results.

As shown in Table 2, the terminal conductors 131 to 13
Samples A to C, E, G, and H in which the sample No. 6 is in the region between the first elliptical line OV11 and the second elliptical line OV12 show good characteristics, but the samples D and F deviate from these. As shown in Table 2, as shown in Table 2, the number of rejects due to the deterioration of the thermal shock characteristics was significantly increased.

[0056]

As described above, according to the present invention, a SAW element having improved thermal shock resistance and reliability by minimizing the influence of the anisotropy of the coefficient of thermal expansion of a single crystal chip, and a SAW element having improved reliability. An electronic component incorporating a SAW element can be provided.

[Brief description of the drawings]

FIG. 1 is a front view of an electronic component according to the present invention.

FIG. 2 is a plan view of a SAW element included in the electronic component shown in FIG. 1, as viewed from an electrode forming surface side.

FIG. 3 is a plan view of a SAW element (sample A) according to a second embodiment of the present invention as viewed from an electrode forming surface side.

FIG. 4 is a plan view of another SAW element (sample B) according to a second embodiment of the present invention as viewed from an electrode forming surface side.

FIG. 5 is a plan view of another SAW element (sample C) according to a second embodiment of the present invention, as viewed from an electrode forming surface side.

FIG. 6 is a plan view of a SAW element (sample D) to be compared with the SAW element according to the second embodiment of the present invention, as viewed from an electrode forming surface side.

FIG. 7 is a plan view of another SAW element (sample E) according to the second embodiment of the present invention as viewed from an electrode forming surface side.

FIG. 8 is a plan view of a SAW element (sample F) to be compared with the SAW element according to the second embodiment of the present invention, as viewed from the electrode forming surface side.

FIG. 9 is a plan view of another SAW element (sample G) according to the second embodiment of the present invention, as viewed from an electrode forming surface side.

FIG. 10 is a plan view of another SAW element (sample H) according to the second embodiment of the present invention, as viewed from an electrode forming surface side.

FIG. 11 is a plan view of a conventional SAW element viewed from an electrode forming surface side.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 SAW element 11 Single crystal chip 12 Electrode 131-136 Terminal conductor 2 Substrate 21 Connection conductor

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H03H 3/08 H01L 41/08 U 9/145 C 41/22 Z

Claims (14)

[Claims] 1. A surface acoustic wave device including a single crystal chip, an electrode, and a plurality of terminal conductors, wherein the electrode is provided on one surface of the single crystal chip, and each of the terminal conductors Is provided on the one surface of the single crystal chip so as to be placed on the same elliptical line assumed on the one surface of the single crystal chip, and is electrically connected to the electrode. A surface acoustic wave device having a minor axis in the direction of a large thermal expansion coefficient of a single crystal chip. 2. The surface acoustic wave device according to claim 1, wherein the elliptical line is a ratio (a: b) of a minor axis a to a major axis b.
Is about 1: 2. 3. A surface acoustic wave device including a single crystal chip, an electrode, and a plurality of terminal conductors, wherein the electrode is provided on one surface of the single crystal chip. Assuming a first ellipse and a second ellipse on the one surface, the center of the first ellipse substantially coincides with the center of the second ellipse, and the major axis and the minor axis are the second ellipse. The first and second elliptical lines have a shorter diameter in a direction in which the coefficient of thermal expansion of the single crystal chip is larger, and each of the terminal conductors Is a surface acoustic wave device that is electrically connected to the electrode and whose center is in a region between the first elliptic line and the second elliptical line. 4. The surface acoustic wave device according to claim 3, wherein a length of a major axis of the first elliptical line is about 60% of a length of the long side of the single crystal chip. The second elliptical line is a surface acoustic wave device in which the length of the major axis is about 90% of the length of the long side of the single crystal chip. 5. The surface acoustic wave device according to claim 1, wherein the single-crystal chip has a substantially square shape,
A surface acoustic wave device having a long side and two opposite short sides, wherein the elliptical line has a major axis whose direction coincides with a direction in which the long side extends. 6. The surface acoustic wave device according to claim 1, wherein a surface of said terminal conductor is an Au film. 7. An electronic component including a substrate and a surface acoustic wave device, wherein the substrate has a plurality of connection conductors on one surface, and wherein the surface acoustic wave device is An electronic component according to any one of the above, wherein the one surface on which the electrode and the terminal conductor are formed is arranged so as to face the one surface of the substrate, and the terminal conductor is connected to the connection conductor. 8. The electronic component according to claim 7, wherein the substrate is mainly composed of ceramics. 9. The electronic component according to claim 7, wherein the connection conductor is arranged at a position corresponding to an arrangement of the terminal conductor provided on the surface acoustic wave device. Electronic components. 10. The electronic component according to claim 9, wherein a surface of the connection conductor is made of an Au film. 11. A method of manufacturing an electronic component including a substrate and a surface acoustic wave device, wherein the substrate has a plurality of connection conductors on one surface, and wherein the surface acoustic wave device is 7. The surface acoustic wave device according to any one of 1 to 6, wherein the surface acoustic wave element is disposed such that the one surface on which the electrode and the terminal conductor are formed is opposed to the one surface of the substrate, A manufacturing method comprising: a step of bringing the terminal conductor on an element into contact with the connection conductor on the substrate by applying a load, and connecting the terminal conductor and the connection conductor by ultrasonic waves. 12. The manufacturing method according to claim 11, wherein the substrate is mainly composed of ceramics. 13. The manufacturing method according to claim 11, wherein the connection conductor is arranged at a position corresponding to an arrangement of the terminal conductor provided on the surface acoustic wave element. Manufacturing method. 14. The method according to claim 11, wherein the surface of the connection conductor is made of an Au film.