JP2002117971A - Luminescent device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a lightweight and inexpensive EL(electroluminescent) device by forming a luminescence element on a flexible film. SOLUTION: A thin metal substrate 102 is used as an element forming substrate, the end sections of the metal substrate 102 are bent, and the end sections are closely stuck to a substrate holder 101 having a curvature in vacuum. The luminescent element is formed on the thin metal substrate 102 stuck to the substrate holder 101, then the substrate holder 101 is separated to form the luminescent device having the luminescent element on the flexible and thin metal substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus (hereinafter, referred to as a light emitting device) having an element (hereinafter, referred to as a light emitting element) in which a thin film made of a light emitting material is sandwiched between a pair of electrodes (anode and cathode). In particular, EL (Electro Luminescen)
The present invention relates to a light emitting device having a light emitting element (hereinafter, referred to as an EL element) using a thin film made of a light emitting material from which ce) is obtained.

[0002]

2. Description of the Related Art In recent years, light emitting devices having EL elements (hereinafter referred to as EL light emitting devices) have been developed. There are a passive matrix type and an active matrix type in the EL light emitting device. In both cases, a thin film (light emitting layer) made of a light emitting material capable of obtaining an EL by applying a current to an EL element.
It operates on the principle of emitting light.

[0003] Various applications using such an EL display device are expected.
Since the thickness of the display device is small, and therefore, the weight of the display device can be reduced, attention has been paid to the use of the display device in a portable device. Therefore, it has been attempted to form a light emitting element on a flexible plastic film.

[0004] Since the heat resistance of the plastic film is low, the maximum temperature of the process must be lowered, and as a result, a TFT having better electric characteristics than when formed on a glass substrate cannot be formed at present. Therefore, a high-performance light-emitting device using a plastic film has not been realized.

FIG. 18 shows the structure of a general EL element. The EL element is an organic light emitting element (OLED: Orga
nic Light Emitting Device). In FIG. 18, an anode 12, a light emitting layer 13, and a cathode 14 are stacked on an insulator 11 to form an EL element 10.
At this time, in general, a metal electrode having a small work function is used for the cathode 14 which is a source of electrons, and the anode 12 which is a source of holes has a large work function and has a large work function with respect to visible light. A transparent oxide conductive film (typically, an ITO film) is used. This is because the metal electrode serving as the cathode 14 is opaque to visible light, and unless the anode is made transparent to visible light, light generated in the light emitting layer (hereinafter referred to as EL light).
Because it cannot be observed.

In this case, the EL light 15 is directly transmitted through the anode 12 and observed, or is transmitted through the anode 12 after being reflected by the cathode 14 and observed. That is, the observer 16 can observe the EL light 15 transmitted through the anode 12 in the pixel where the light emitting layer 13 emits light.

However, in a pixel that does not emit light, incident external light (light outside the light emitting device) 17 is reflected on the back surface of the cathode (the surface in contact with the light emitting layer), and the back surface of the cathode acts like a mirror. Then, there was a problem that the outside scene was reflected on the observation surface (the surface facing the observer side). In order to avoid this problem, a circular polarizing film is attached to the observation surface of the EL light emitting device so that an external scene is not reflected on the observation surface, but the circular polarizing film is very expensive. Therefore, there is a problem that the manufacturing cost is increased.

[0008]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and the present invention has a light emitting element formed on a flexible film to reduce the weight of the light emitting device.
It is an object to provide an L light emitting device. Another object is to provide an inexpensive electric appliance having the same as a display unit.

Another object of the present invention is to provide an inexpensive EL light-emitting device by reducing the manufacturing cost of the EL light-emitting device by preventing the EL light-emitting device from being mirror-finished without using a circularly polarizing film. .

[0010]

According to the present invention, there is provided an EL device in which a light emitting element is formed on a flexible metal substrate by using a thin metal substrate instead of using a plastic substrate as an element forming substrate. It is characterized by obtaining a light emitting device.

The structure of the invention disclosed in this specification has an insulating film on a substrate having a metal surface, and a light emitting element on the insulating film, wherein the light emitting element has an anode, a cathode, and the anode. A light emitting device comprising an EL material interposed between the cathode and the cathode. Note that the EL material indicates an organic compound material that emits light.

In another aspect of the invention, an insulating film is provided on a substrate having a metal surface, and a light emitting element is provided on the insulating film.
The light-emitting element includes an anode, a cathode, and an EL material sandwiched between the anode and the cathode, and a light-shielding film is provided in contact with the cathode or through an insulating film or a conductive film. A light emitting device characterized by the above-mentioned. As the light-shielding film, a thin film made of a material having a high absorption coefficient for visible light can be used. Typically, an insulating film (preferably a resin film) in which metal particles or carbon particles are dispersed,
A metal film with low reflectance (preferably, a titanium film, a titanium nitride film, a chromium film, a molybdenum film, a tungsten film, a tantalum film, or a tantalum nitride film) or a semiconductor film can be used.

In the above structure, the substrate having a metal surface is a heat-resistant metal substrate. The thickness of the heat resistant substrate is less than 200 μm, preferably 5 μm to 30 μm
It is characterized by being. Further, the maximum height (R _max ) of the surface roughness of the substrate having the metal surface is 1 μm or less. Further, a curvature radius of a convex portion present on the surface of the substrate having the metal surface is 1 μm or more.

Further, in order to realize the above structure, the present invention relates to a method for bending a thin metal substrate, fixing the thin metal substrate to a substrate holder having an edge with good adhesion in a vacuum, It is characterized in that a light emitting element is formed thereon, and then the substrate holder is separated.

[0015] The invention for realizing the above-mentioned structure comprises a step of bending an end of a substrate having a metal surface and fixing it to a substrate holder, and a step of forming an insulating film on the substrate having the metal surface. A step of forming a light emitting element on the insulating film; and a step of separating the substrate holder.

Further, the fixing step is performed in a vacuum. Further, the fixing step is performed at room temperature to
The process is performed at 400 ° C.

Further, the end of the substrate holder has a curved surface. Further, the substrate holder has the same thermal expansion coefficient as that of the substrate having the metal surface. Further, the substrate having a metal surface is a heat-resistant metal substrate. The thickness of the heat-resistant metal substrate is less than 200 μm, preferably 5 μm to 30 μm. Further, the substrate holder is made of stainless steel, ceramics, or Al ₂ O ₃ . The thickness of the substrate holder is 500 μm to 10 μm.
It is characterized in that it is 00 μm.

The above-mentioned heat-resistant metal substrate refers to a substrate made of a metal material having heat resistance, for example, W, Ni, stainless steel or the like.

It should be noted that stainless steel in the present specification refers to steel (alloy of iron and carbon) containing about 12% or more of chromium, and is generally classified into martensite, ferrite, and austenitic steels. Can be different. Note that Ti, Nb, M
Also includes stainless steel to which one or more selected from o, Cu, Ni, or Si is added.

[0020]

Embodiments of the present invention will be described below.

First, a metal substrate 102 having heat resistance to be an element forming substrate and a substrate holder 101 are prepared.
As the metal substrate 102 (a substrate having a metal surface), a stainless steel substrate is prepared. The thickness of the substrate 102 is 20
Those having a size of less than 0 μm, preferably 10 μm to 30 μm are used. Further, as the substrate holder 101, the metal substrate 1
A stainless steel substrate thicker than 02 is prepared. This substrate 1
01 has a thickness of 500 μm to 1000 μm. Further, as the substrate holder 101, ceramics or alumina (Al ₂ O ₃ ) can be used.

Next, as shown in FIG. 1A, a substrate holder 101 having at least a curved surface at an end and a metal substrate 10 are formed.
2 is fixed so that air does not enter between the substrates, and the end of the metal substrate 102 is further fixed by using the fixing portion 103 to further strengthen the adhesion. FIG. 1 (B) shows a state in which the above is fixed. Here, the metal substrate 102 was fixed to the substrate holder 101 without using an adhesive so that the fixing part 103 was used as a frame and the substrate holder 101 was fitted. Further, the fixing portion may be tape-shaped or band-shaped, and the end of the metal substrate may be fixed to the substrate holder. Note that the step of fixing the metal substrate 102 in close contact with the substrate holder 101 is preferably performed at room temperature to 400 ° C. in a vacuum to prevent air from entering between the two substrates. Alternatively, the metal substrate 102 may be placed on the substrate holder while applying a force to spread the metal substrate 102, and if necessary, may be brought into close contact by pressing.

Further, it is preferable that the maximum height (R _max ) of the surface roughness of the unevenness of the surface of the metal substrate after fixing is as flat as 1 μm or less. Note that the maximum height (R _{ma x)} is due to JIS B-0601. Alternatively, it is preferable that the height difference per 1 mm square of the surface irregularities in the fixed metal substrate is 1 μm. Further, the radius of curvature of the convex portion of the unevenness is 1 μm or more, preferably 10 μm or more. Also, a known technique for improving the flatness of the surface of the metal substrate, for example, C
A polishing step called MP (chemical mechanical polishing) may be used.

Next, after forming a base insulating film on the metal substrate 102, necessary elements are formed on the base insulating film. Although the surface of the base insulating film is shown as being flat for simplicity, a step is actually formed in a portion where the fixing portion and the metal substrate are in contact. If the element forming substrate is a plastic substrate, the process temperature must be 350 ° C. or lower. However, in the present invention, since the element forming substrate is a metal substrate, heat treatment at 350 ° C. or higher is possible. It is preferable that the substrate holder and the metal substrate have the same thermal expansion coefficient so that the substrates are not separated by the heat treatment in the element forming step. Here, an example is described in which a pixel portion 105 including a driver circuit 104 and an EL element is formed. (Figure 1
(C))

The radius of curvature r at the end of the substrate holder shown in FIG.
0 cm or less.

Next, the fixed substrate 106 is attached to the second adhesive layer 10.
Attach with 7 (FIG. 2 (A)) Here, EL
Although the fixed substrate 106 is used to protect the element from intrusion of moisture, oxygen, and the like from the outside, it is not necessary to use the fixed substrate 106 unless it is particularly necessary. As the fixed substrate 106, a light-transmitting resin substrate may be used, and a substrate provided with a DLC film as a protective film on one or both surfaces may be used.

Next, from the back side, physical means, for example,
The substrate holder is removed by removing the fixing part 103. In particular, separation is easy because no adhesive is used.
Using a method of separating the substrate holder by separating the fixed part or a method of separating the substrate holder by injecting a fluid (liquid or gas under pressure) between the substrate holder and the metal substrate Is also good. Here, the substrate holder and the metal substrate are separated by cutting the ends of the substrate holder and the metal substrate. (FIG. 2 (B))

Finally, the thin metal substrate 108
The light emitting device sandwiched between the element forming substrate as described above and the fixed substrate as the resin substrate is completed.

In FIGS. 1 and 2, TFT elements electrically connected to the cathode are shown. For simplicity, the end of the substrate holder and the TFT elements are shown without much separation.
In practice, it is preferable to keep a sufficient distance. Here, the light emitting element is a general term including a TFT element. Note that although a semiconductor film having an amorphous structure can be used for the active layer of the TFT element, a semiconductor film having a crystalline structure, for example, polysilicon is preferably used.

The present invention having the above configuration will be described in more detail with reference to the following embodiments.

[0031]

[Embodiment 1] In this embodiment, an example of a method for manufacturing a light emitting device sandwiched between an element forming substrate which is a thin metal substrate and a fixed substrate which is a resin substrate will be described with reference to FIGS. Show. However, it goes without saying that the present invention is not limited to this embodiment.

First, a stainless steel substrate (JIS SUS304 or JIS SUS3) is used as the substrate holder 101.
16) is used. Then, by using the method described in the above embodiment, the substrate holder 101 and the thin metal substrate (JIS
SUS304 or JISSUS316) and the element forming substrate 102 were fixed by the fixing portion 103. (Figure 1
(B))

Next, after forming a base insulating film on the metal substrate 102, necessary elements are formed on the base insulating film. Here, an example is described in which a pixel portion 105 including a driver circuit 104 and an EL element is formed. (Fig. 1 (C))

As a base insulating film, a silicon oxide film, a silicon nitride film, a silicon nitride oxide film (SiOx Ny),
Alternatively, a stacked film or the like thereof can be used in a thickness range of 100 to 500 nm, and a known film forming method (a thermal CVD method, a plasma CVD method, a vapor deposition method, a sputtering method, a reduced pressure thermal CVD method, or the like) can be used. Is used. Here, a silicon oxynitride film containing more nitrogen than oxygen in the film composition and a silicon oxynitride film containing more oxygen than nitrogen in the film composition were stacked.

Next, a semiconductor layer is formed on the base insulating film.
You. The material of the semiconductor layer is not limited, but is preferably silicon.
Or silicon germanium (Si_XGe_1-X(0 <X
<1)) It is good to form with an alloy etc. As a forming means
Known film forming methods (thermal CVD, plasma CVD, vapor deposition
Method, sputtering method, low pressure thermal CVD method, etc.)
The crystallization method is also a known method (solid phase growth method, laser bonding).
Crystallization method, solid phase growth method using catalytic element, etc.)
Can be. In this embodiment, a sputtering method capable of forming a film at a low temperature is used.
Laser crystallization by forming amorphous silicon film using
A crystalline silicon film was formed by the method. Laser crystallization
When a crystalline semiconductor film is manufactured by the method, a pulse oscillation type
Or continuous emission type excimer laser or YAG laser
ー, YVO _FourLasers can be used.

Next, a gate insulating film covering the semiconductor layer is formed by a known method (thermal CVD, plasma CVD, vapor deposition, sputtering, low pressure thermal CVD, etc.). In this embodiment, a silicon oxide film is formed by a plasma CVD method.

Next, a conductive layer is formed on the gate insulating film. The conductive layer is formed by forming a conductive film by a known means (a thermal CVD method, a plasma CVD method, a reduced pressure thermal CVD method, an evaporation method, a sputtering method, or the like), and then patterning the conductive film into a desired shape using a mask. I do.

Next, an impurity element for imparting n-type or an impurity element for imparting p-type is appropriately added to the semiconductor layer by ion implantation or ion doping, and LDD is performed.
An impurity region which forms a region, a source region, and a drain region is formed.

Thereafter, a known method (thermal CVD, plasma CVD, vapor deposition, sputtering, low pressure thermal CVD, etc.)
An interlayer insulating film is formed using a silicon nitride film, a silicon nitride oxide film, or a silicon oxide film manufactured by the method described above. The added impurity element is activated.
Here, laser light irradiation was performed. Activation may be performed by heat treatment instead of laser light irradiation.

Next, after forming a contact hole reaching the source region or the drain region by using a known technique, a source electrode or a drain electrode is formed to obtain a TFT.

Next, hydrogenation is performed using a known technique, and the whole is hydrogenated to complete an n-channel TFT or a p-channel TFT. In this embodiment, the hydrogenation treatment is performed using hydrogen plasma which can be performed at a relatively low temperature.

Next, known methods (thermal CVD, plasma CVD, vapor deposition, sputtering, low pressure thermal CVD, etc.)
An interlayer insulating film is formed using a silicon nitride film, a silicon nitride oxide film, or a silicon oxide film manufactured by the method described above. Next, a pixel electrode (cathode) is formed after forming a contact hole reaching the drain electrode of the pixel portion by using a known technique. Next, banks are formed at both ends of the pixel electrode, and an EL layer and an anode of an EL element are formed on the pixel electrode.

Next, all the elements included in the pixel portion and the driving circuit are covered with an insulating film.

Next, an insulating film covering all the elements formed on the element forming substrate and the fixed substrate 106 are bonded to the second adhesive layer 107.
Paste in. (FIG. 2A) Although the fixed substrate 106 is used here to protect the EL element from intrusion of moisture, oxygen, and the like from the outside, it is not necessary to use the fixed substrate 106 unless it is particularly necessary. As the fixed substrate 106, a resin substrate may be used, and a substrate provided with a DLC film as a protective film on one surface or both surfaces may be used.

Next, physical means, for example, from the back side,
The substrate holder is removed by removing the fixing part 103. In particular, separation is easy because no adhesive is used.
Here, the substrate holder and the metal substrate are separated by cutting the ends of the substrate holder and the metal substrate.
(FIG. 2 (B))

Finally, a light emitting device sandwiched between an element forming substrate as a thin metal substrate and a fixed substrate as a resin substrate was completed.

Embodiment 2 A method for selectively forming a crystalline semiconductor film by using a metal element which promotes crystallization of an amorphous semiconductor film will be described with reference to FIG. In FIG. 3A, reference numeral 200 denotes the base insulating film described above.

First, a metal substrate and a substrate holder are fixed by a fixing portion by the method described in the embodiment, and a base insulating film 200 is formed thereon. Next, the base insulating film 200
An amorphous silicon film 201 is formed thereon by a known method.
Then, a 150 nm-thick silicon oxide film 202 is formed over the amorphous silicon film 201. Although a method for forming the silicon oxide film is not limited, for example, tetraethylorthosilicate (TEOS) and O
₂ and a reaction pressure of 40 Pa and a substrate temperature of 300 to 4
00 ° C., high frequency (13.56 MHz) power density 0.
It is formed by discharging at 5 to 0.8 W / cm ² .

Next, the opening 20 is formed in the silicon oxide film 202.
Then, a nickel acetate solution containing 10 ppm by weight of nickel is applied. As a result, a nickel-containing layer 204 is formed, and the nickel-containing layer 204 contacts the amorphous silicon film 201 only at the bottom of the opening 203.

The crystallization is performed at a temperature of 500 to 650 for the heat treatment.
The heat treatment is performed at 4 ° C. for 4 to 24 hours, for example, at 570 ° C. for 14 hours. In this case, in the crystallization, the portion of the amorphous silicon film in contact with nickel first crystallizes, and then crystallization proceeds in a direction parallel to the surface of the substrate. The crystalline silicon film 205 thus formed is made up of a collection of rod-like or needle-like crystals, and each crystal grows in a specific direction when viewed macroscopically. After that, if the silicon oxide film 202 is removed, a crystalline silicon film 205 can be obtained.

This embodiment can be combined with the first embodiment.

[Embodiment 3] A metal element used for crystallization remains in a crystalline silicon film formed according to the method described in Embodiment 2. It is not evenly distributed in the film, but as an average concentration,
It remains at a concentration exceeding 1 × 10 ¹⁹ / cm ³ . Of course, even in such a state, it can be used for a channel formation region of various semiconductor devices including a TFT, but it is more preferable to remove the metal element by gettering.

In this embodiment, an example of the gettering method is shown.
4 will be described. On the surface of the crystalline silicon film 301
Means that the silicon oxide film 302 for the mask has a thickness of 150 nm.
Crystalline silicon formed with an opening 303
An area where the film is exposed is provided. A place according to the second embodiment
In this case, the silicon oxide film 202 shown in FIG.
It can be used as it is, and after the process of FIG.
It is also possible to shift to the steps of this embodiment. And a
1 × 10 ¹⁹~ 1 ×
10^{twenty two}/ Cm^ThreeTo form a phosphorus-added region 305 having a concentration of
You.

Then, as shown in FIG. 4B, in a nitrogen atmosphere at 550 to 800 ° C. for 5 to 24 hours, for example, at 60 ° C.
When heat treatment is performed at 0 ° C. for 12 hours, the phosphorus added region 30
5 serves as a gettering site, and the catalytic element remaining in the crystalline silicon film 301 can be segregated in the phosphorus-added region 305.

Thereafter, as shown in FIG. 4C, the silicon oxide film 302 for masking and the phosphorus added region 305 are removed by etching, so that the concentration of the metal element used in the crystallization step is reduced. The crystalline silicon film 306 reduced to less than 1 × 10 ¹⁷ / cm ³ can be obtained.

This embodiment corresponds to the first embodiment or the second embodiment.
It is possible to combine with

[Embodiment 4] In this embodiment, an n-channel type T
C that complementarily combines FT and p-channel TFT
This is an example of manufacturing a MOS circuit, which will be described with reference to FIGS.

According to the embodiment, after the base insulating film 404 is formed on the metal substrate 402 fixed to the substrate holder 401 by the fixing portion 403, the semiconductor layers 501 and 502 are formed. (FIG. 5 (A))

Next, a gate insulating film 503, a first conductive film 504, and a second conductive film 505 are formed. (FIG. 5 (B))
As a material of the first conductive film 504 and the second conductive film 505, an element selected from Ta, W, Ti, Mo, Al, Cu, Cr, and Nd, or an alloy material or a compound material containing the above element as a main component May be formed. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. In this embodiment, the first conductive film 504 is made of tantalum nitride or titanium by 50 to 100.
The second conductive film 505 is formed with tungsten to a thickness of 100 to 300 nm.

Next, as shown in FIG. 5C, a mask 506 made of a resist is formed, and a first etching process for forming a gate electrode is performed. There is no limitation on the etching method, but preferably, ICP (Inductively Coupled Plas) is used.
ma: Inductively coupled plasma) etching method is used. Mixture of CF ₄ and Cl ₂ as etching gas, 0.5～2P
a, preferably 500 at the pressure of 1 Pa
The plasma is generated by applying RF (13.56 MHz) power of W. The electrode area size on the substrate side is 1
The electrode area size of the coil type, which is 2.5 cm × 12.5 cm (here, a quartz disk provided with a coil), is a disk having a diameter of 25 cm. A 100 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. CF ₄ and Cl ₂
Is mixed, etching can be performed at substantially the same rate in the case of a tungsten film, a tantalum nitride film, and a titanium film.

Under the above etching conditions, the end portion can be formed into a tapered shape by the effect of the shape of the resist mask and the bias voltage applied to the substrate side. The angle of the tapered portion is set to 15 to 45 °. In order to perform etching without leaving a residue on the gate insulating film, the etching time may be increased by about 10 to 20%. Since the selectivity of the silicon oxynitride film to the W film is 2 to 4 (typically 3), the exposed surface of the silicon oxynitride film is etched by about 20 to 50 nm by the over-etching process. Thus, the first
The first shape conductive layers 507 and 508 (the first conductive layer 50) including the first conductive film and the second conductive film
7a, 508a and second conductive layers 507b, 508b) are formed. Reference numeral 509 denotes a gate insulating film, and a region which is not covered with the first shape conductive layer is etched to be thin by about 20 to 50 nm.

Then, a first doping process is performed to dope an n-type impurity (donor). (FIG. 5 (D))
The method is performed by an ion doping method or an ion implantation method. The condition of the ion doping method is that the dose is 1 × 10 ^{13 to} 5
Perform at × 10 ¹⁴ / cm ² . As the impurity element imparting n-type, an element belonging to Group 15 of the periodic table, typically, phosphorus (P) or arsenic (As) is used. In this case, the first shape conductive layers 507 and 508 serve as a mask for the doping element, and appropriately adjust the acceleration voltage (for example, 20 to 60 ke).
V), and impurity regions (n + regions) 510 and 511 are formed using the impurity elements that have passed through the gate insulating film 509. For example, the concentration of phosphorus (P) in the impurity region (n + region) is set to be in a range of 1 × 10 ²⁰ to 1 × 10 ²¹ / cm ³ .

Further, as shown in FIG. 6A, a second etching process is performed. Etching is performed using an ICP etching method, and CF ₄ , Cl _2, and O ₂ are mixed as an etching gas, and RF power (13.56 MHz) of 500 W is supplied to the coil-type electrode at a pressure of 1 Pa to generate plasma. .
On the substrate side (sample stage), 50 W RF (13.56
MHz) power is applied, and a lower self-bias voltage is applied than in the first etching process. Under such conditions, the tungsten film is anisotropically etched so that the tantalum nitride film or the titanium film as the first conductive layer is left. Thus, the second shape conductive layers 512 and 513 (the first conductive films 512 a and 513 a and the second conductive films 512
b, 513b). Reference numeral 516 denotes a gate insulating film, and a region which is not covered with the second shape conductive layers 512 and 513 is further etched by about 20 to 50 nm to reduce the film thickness.

Then, as shown in FIG.
Performs a grouping process. More doping than the first doping process.
N-type impurity (donor) under high acceleration voltage conditions
Doping. For example, when the acceleration voltage is 70 to 120 k
eV and 1 × 10¹³/ Cm ^TwoFig. 5
(D) Inside the first impurity region formed in the semiconductor layer
Then, an impurity region is formed. Doping the second conductive film
512b and 513b as masks for impurity elements
In the region below the first conductive film 512a, 512a.
Doping is performed so that an impurity element is added. Like this
And an impurity region overlapping with the first conductive films 512a and 513a.
Regions (n-regions) 514 and 515 are formed. This impure
In the object region, the second conductive layers 512a and 513a are almost the same.
Because it remains in the film thickness, the direction along the second conductive layer
Density difference in direction is small, 1 × 10¹⁷~ 1 × 10¹⁹/
cm^ThreeFormed at a concentration of

Then, as shown in FIG. 6B, a third etching process is performed, and the gate insulating film 516 is etched. As a result, the second conductive film is also etched, and the end portion recedes and becomes smaller, so that the third shape conductive layer 51 is formed.
7, 518 are formed. In the figure, reference numeral 519 denotes a remaining gate insulating film.

Then, as shown in FIG. 6C, a mask 520 made of a resist is formed, and a p-type impurity (acceptor) is added to the semiconductor layer 501 for forming the p-channel TFT.
Doping. Typically, boron (B) is used.
The impurity concentration of the impurity regions (p + regions) 521 and 522 is set to 2 × 10 ²⁰ to 2 × 10 ²¹ / cm ^3, and boron of 1.5 to 3 times the contained phosphorus concentration is added to change the conductivity type. Turn it over.

Through the above steps, impurity regions are formed in the respective semiconductor layers. Third shape conductive layers 517, 51
8 is a gate electrode. After that, as shown in FIG. 6D, a protective insulating film 523 made of a silicon nitride film or a silicon oxynitride film is formed by a plasma CVD method. Then, a step of activating the impurity element added to each semiconductor layer is performed for the purpose of controlling the conductivity type.

Further, a silicon nitride film 524 is formed,
Perform hydrotreating. As a result, hydrogenation can be achieved by diffusing hydrogen in the silicon nitride film 524 into the semiconductor layer.

The interlayer insulating film 525 is formed of an organic insulating material such as polyimide and acrylic. Of course, plasma C
Although a silicon oxide film formed using TEOS (Tetraethyl Ortho silicate) by the VD method may be used, it is preferable to use the organic material from the viewpoint of improving flatness.

Next, contact holes are formed, and aluminum (Al), titanium (Ti), and tantalum (Ta) are formed.
The source wiring or the drain wiring 526 to
528 are formed.

Through the above steps, a CMOS circuit in which an n-channel TFT and a p-channel TFT are complementarily combined can be obtained.

The p-channel TFT has a channel formation region 530 and impurity regions 521 and 522 functioning as a source region or a drain region.

In the n-channel type TFT, a channel forming region 531 and an impurity region 515 a (Gate Overlapped Drain:
GOLD region), an impurity region 515b (LDD region) formed outside the gate electrode, and an impurity region 516 functioning as a source or drain region.

Such a CMOS circuit makes it possible to form a drive circuit for an active matrix type EL display device. In addition, such an n-channel type T
The FT or p-channel TFT can be applied to a transistor forming a pixel portion.

A basic logic circuit can be formed by combining such CMOS circuits, or a more complicated logic circuit (signal division circuit, D / A converter, operational amplifier,
γ correction circuit), and a memory or a microprocessor can be formed.

This embodiment can be freely combined with any one of Embodiments 1 to 3.

[Embodiment 5] Here, EL (Electroluminescence) was performed using the TFT obtained in Embodiment 4 above.
An example in which a display device is manufactured is described below with reference to FIGS.

FIG. 7 shows an example of a light emitting device having a pixel portion and a drive circuit for driving the pixel portion on the same insulator (however, before sealing). Note that the driving circuit has a CMO as a basic unit.
5 illustrates an S circuit, and illustrates one pixel in a pixel portion. This CM
The OS circuit can be obtained according to the fourth embodiment.

In FIG. 7, reference numeral 601 denotes a substrate holder;
03 is a fixed part, 602 is an element formation substrate (thin metal substrate)
A driving circuit 604 composed of an n-channel TFT and a p-channel TFT, a current control composed of a switching TFT composed of a p-channel TFT and a current control composed of an n-channel TFT are formed on a base insulating film provided on the element forming substrate. A TFT is formed. In the present embodiment, TF
T is all formed of a top gate type TFT.

An n-channel type TFT and a p-channel type T
The description of the FT may be omitted because it is sufficient to refer to the fourth embodiment.
The switching TFT is a p-channel TFT having a structure (double gate structure) having two channel formation regions between a source region and a drain region. Note that this embodiment is not limited to the double gate structure, and may have a single gate structure in which one channel formation region is formed or a triple gate structure in which three channel formation regions are formed.

The drain region 60 of the current control TFT is
A contact hole is provided in the first interlayer insulating film 607 before the second interlayer insulating film 608 is provided on 6. This is to simplify the etching process when forming a contact hole in the second interlayer insulating film 608. A contact hole is formed in the second interlayer insulating film 608 so as to reach the drain region 606, and a pixel electrode 609 connected to the drain region 606 is provided. The pixel electrode 609 is an electrode functioning as a cathode of an EL element, and is formed using a conductive film containing an element belonging to Group 1 or 2 of the periodic table. In this embodiment, a conductive film made of a compound of lithium and aluminum is used.

Next, reference numeral 613 denotes an insulating film provided so as to cover the edge of the pixel electrode 609, and is referred to as a bank in this specification. The bank 613 may be formed using an insulating film containing silicon or a resin film. When a resin film is used, the specific resistance of the resin film is 1 × 10 ⁶ to 1 × 10 ¹² Ωm (preferably 1 × 10 ¹² Ωm).
When carbon particles or metal particles are added so as to be 10 ⁸ to 1 × 10 ¹⁰ Ωm), dielectric breakdown during film formation can be suppressed.

The EL element 610 is a pixel electrode (cathode)
609, an EL layer 611 and an anode 612. For the anode 612, a conductive film having a large work function, typically, an oxide conductive film is used. As the oxide conductive film, indium oxide, tin oxide, zinc oxide, or a compound thereof may be used.

In this specification, the light emitting layer (EL film) is laminated with a hole injection layer, a hole transport layer, a hole blocking layer, an electron transport layer, an electron injection layer or an electron blocking layer. The generic name of the layers is defined as an EL layer. However, the EL layer has E
This includes the case where the L film is used as a single layer.

The light emitting layer is not particularly limited as long as it is a low molecular EL material or a high molecular EL material.
For example, a thin film made of a light-emitting material that emits light by singlet excitation or a thin film made of a light-emitting material that emits light by triplet excitation can be used.

Although not shown here, it is effective to provide a passivation film so as to completely cover the EL element 610 after the anode 612 is formed. As the passivation film, a carbon film (typically, a DLC film),
An insulating film including a silicon nitride film or a silicon nitride oxide film is used, and the insulating film is used as a single layer or a stacked layer in which the insulating film is combined.

Next, after performing a sealing (or enclosing) step for protecting the EL element, the substrate holder 601 was separated as shown in the embodiment mode and the first embodiment.
The subsequent EL display device will be described with reference to FIGS.

FIG. 8A is a top view showing a state in which the process up to sealing of the EL element has been performed, and FIG.
It is sectional drawing cut | disconnected by A '. 701 shown by a dotted line is a pixel portion, 702 is a source side drive circuit, and 703 is a gate side drive circuit. 704 is a cover material, 705 is a first seal material, and 706 is a second seal material.

Reference numeral 708 denotes wiring for transmitting signals input to the source-side driving circuit 702 and the gate-side driving circuit 703, and a video signal or a clock signal from an FPC (flexible print circuit) 708 serving as an external input terminal. Receive. Although only the FPC is shown here, this FPC has a printed wiring board (P
WB) may be attached.

Next, a sectional structure will be described with reference to FIG. A pixel portion and a source-side driver circuit 709 are formed over an insulator 700 (corresponding to the element formation substrate 603), and the pixel portion includes a current control TFT 710 and a pixel electrode 711 electrically connected to a drain thereof. It is formed by a plurality of pixels. In addition, the source side driving circuit 709
Are formed using a CMOS circuit combining an n-channel TFT and a p-channel TFT.

The banks 7 are provided at both ends of the pixel electrode 711.
12, an EL layer 713 and an EL element anode 714 are formed on the pixel electrode 711. The anode 714 also functions as a common wiring for all pixels, and is electrically connected to the FPC 716 via the connection wiring 715. Further, all elements included in the pixel portion and the source-side driver circuit 709 are covered with a passivation film (not shown).

Further, the cover member 704 is attached by the first seal member 705. Note that a spacer may be provided to secure an interval between the cover member 704 and the EL element. The space 71 is provided inside the first sealing material 705.
7 are formed. Note that the first sealant 705 is preferably a material that does not transmit moisture or oxygen. Further, it is effective to provide a substance having a moisture absorbing effect or a substance having an antioxidant effect inside the void 717.

It is preferable to provide a carbon film (specifically, a diamond-like carbon (DLC) film) with a thickness of 2 to 30 nm as a protective film on the front and back surfaces of the cover member 704. Such a carbon film (not shown here)
It has a role in preventing oxygen and water from entering and mechanically protecting the surface of the cover member 704. Also, the cover material 70
A polarizing plate (typically, a circular polarizing plate) may be attached to 4.

After bonding the cover member 704, the first
The second sealing material 70 is provided so as to cover the exposed surface of the sealing material 705.
6 are provided. The second sealing material 706 is the first sealing material 7
The same material as 05 can be used.

By enclosing the EL element with the above structure, the EL element can be completely shut off from the outside, and a substance such as moisture or oxygen, which accelerates the deterioration of the EL layer due to oxidation, enters from the outside. Can be prevented. Therefore,
A highly reliable EL display device can be obtained.

This embodiment can be combined with the first embodiment.

[Embodiment 6] In this embodiment, in the EL display device obtained in Embodiment 5, a more detailed top view structure of a pixel portion is shown in FIG. 9A, and a circuit diagram is shown in FIG. 9B. . FIG.
In FIG. 9A and FIG. 9B, a common reference numeral is used, so that they may be referred to each other.

The source of the switching TFT 802 is connected to the source wiring 815, and the drain is connected to the drain wiring 8
05. The drain wiring 805 is electrically connected to the gate electrode 807 of the current controlling TFT 806. The source of the current controlling TFT 806 is electrically connected to the current supply line 816, and the drain is electrically connected to the drain wiring 817. Also, the drain wiring 8
Reference numeral 17 is electrically connected to a pixel electrode (cathode) 818 indicated by a dotted line.

At this time, a storage capacitor is formed in a region 819. The storage capacitor 819 is connected to the current supply line 81
6, a semiconductor film 820 electrically connected to the gate insulating film 6, an insulating film (not shown) in the same layer as the gate insulating film, and the gate electrode 807. In addition, a capacitor formed by the gate electrode 807, the same layer (not shown) as the first interlayer insulating film, and the current supply line 816 can be used as a storage capacitor.

This embodiment corresponds to the first embodiment or the fifth embodiment.
It is possible to combine with

[Embodiment 7] In this embodiment, FIG. 10 shows an example of a circuit configuration of the EL display device shown in Embodiment 5 or 6. Note that this embodiment shows a circuit configuration for performing digital driving. In the present embodiment, the source side driving circuit 901
A pixel portion 906 and a gate driver circuit 907 are provided. In this specification, a drive circuit is a generic term including a source-side processing circuit and a gate-side drive circuit.

The source side driving circuit 901 includes a shift register 902, a latch (A) 903, a latch (B) 904,
A buffer 905 is provided. In the case of analog driving, a sampling circuit (transfer gate) may be provided instead of the latches (A) and (B). The gate driver circuit 907 includes a shift register 908 and a buffer 909.

In this embodiment, the pixel portion 906 includes a plurality of pixels, and the plurality of pixels are provided with an EL element. At this time, the cathode of the EL element is a current control TFT.
It is preferable to be electrically connected to the drain.

The source side drive circuit 901 and the gate side drive circuit 907 are formed of the n-channel TFT or the p-channel TFT obtained in the second to fourth embodiments.

Although not shown, a gate-side drive circuit may be further provided on the side opposite to the gate-side drive circuit 907 with the pixel portion 906 interposed therebetween. In this case, both have the same structure and share a gate line, and a structure is adopted in which, even if one of them is broken, a gate signal is sent from the remaining one to operate the pixel portion normally.

This embodiment can be combined with the first embodiment, the fifth embodiment or the sixth embodiment.

[Embodiment 8] In this embodiment, FIG. 11 shows an example of an EL display device in which TFTs used for a pixel portion and a driving circuit are all constituted by inverted staggered TFTs.

In FIG. 11, reference numeral 1001 denotes a substrate holder, 1002 denotes a metal substrate, and 1003 denotes a fixing portion. First, according to the embodiment, a metal substrate 1002 fixed to the substrate holder 1001 by the fixing portion 1003 is prepared. Next, a base insulating film is formed over the metal substrate.

Next, a gate wiring (including a gate electrode) 1004 having a single-layer structure or a laminated structure is formed over the base insulating film.
To form As a means for forming the gate wiring 1004, a conductive film having a thickness in the range of 10 to 1000 nm, preferably 30 to 300 nm is formed by a thermal CVD method, a plasma CVD method, a low pressure thermal CVD method, an evaporation method, a sputtering method, or the like. , By a known patterning technique. As a material of the gate wiring 1004, a material mainly containing a conductive material or a semiconductor material, for example, Ta (tantalum), M
Refractory metal materials such as o (molybdenum), Ti (titanium), W (tungsten), chromium (Cr), silicide which is a compound of these metal materials and silicon, and polysilicon having N-type or P-type conductivity Any structure can be used without particular limitation as long as it has at least one material layer mainly composed of a material such as Cu (copper), Al (aluminum), or the like as a low-resistance metal material.

Next, a gate insulating film 1005 is formed.

Next, an amorphous semiconductor film is formed. Next, a laser crystallization treatment is performed on the amorphous semiconductor film to form a crystalline semiconductor film. After that, the obtained crystalline semiconductor film is patterned into a desired shape to form a semiconductor layer. Next, an insulating layer 1006 is formed over the semiconductor layer. This insulating layer 1006 protects a channel formation region in a step of adding an impurity element.

Next, an impurity element imparting n-type or an impurity element imparting p-type is appropriately added to the semiconductor layer by ion implantation or ion doping, and LDD is performed.
An impurity region which forms a region, a source region, and a drain region is formed.

Thereafter, an interlayer insulating film is formed using a silicon nitride film, a silicon nitride oxide film, or a silicon oxide film manufactured by a sputtering method. The added impurity element is activated. Here, laser light irradiation was performed. Activation may be performed by heat treatment instead of laser light irradiation.

Next, after forming a contact hole reaching the source region or the drain region by using a known technique, a source electrode or a drain electrode is formed to obtain an inversely staggered TFT.

Next, hydrogenation is performed using a known technique, and the whole is hydrogenated to complete an n-channel TFT and a p-channel TFT. In this embodiment, the hydrogenation treatment is performed using hydrogen plasma which can be performed at a relatively low temperature.

Next, a first interlayer insulating film 1007 is formed using a silicon nitride film, a silicon nitride oxide film, or a silicon oxide film manufactured by a sputtering method. Then
After forming a contact hole reaching the drain region 1000 of the pixel portion by using a known technique, the second interlayer insulating film 1 is formed.
008 is formed. Next, after forming a contact hole reaching the drain region 1000 of the pixel portion by using a known technique, a pixel electrode 1009 is formed. Next, banks 1010 are formed at both ends of the pixel electrode, and E
The anode 1013 of the L layer 1011 and the EL element 1012 is formed.

In FIG. 16, a driving circuit including an N-channel TFT 1014 and a P-channel TFT 1015 and a P-channel TFT are formed on a metal substrate as an element forming substrate.
And a current control TFT 1017 formed of an N-channel TFT. Further, in this embodiment, all the TFTs are formed by inverted staggered TFTs.

The switching TFT 1016 has a structure (double gate structure) having two channel forming regions between a source region and a drain region. Note that this embodiment is not limited to the double gate structure, and may have a single gate structure in which one channel formation region is formed or a triple gate structure in which three channel formation regions are formed.

Further, it is preferable that all elements included in the pixel portion and the driving circuit are covered with a passivation film (not shown).

The subsequent steps are performed in accordance with the steps of Example 1.
The light emitting device is completed by separating the substrate holder 1001.

This embodiment is similar to the first embodiment, the sixth embodiment,
Alternatively, it can be freely combined with the seventh embodiment.

[Embodiment 9] In this embodiment, FIG. 12 shows an example in which a light-shielding film is provided without using a circularly polarizing film to prevent the EL light-emitting device from being mirror-finished. Normally, a stainless steel substrate has a low reflectance and is therefore hard to be mirror-finished, but it is easy to be mirror-finished when the substrate surface is flattened by polishing or the like.

The basic structure is the same as that of the fifth embodiment except that a light-shielding film 1108 is provided instead of the second interlayer insulating film (608 in FIG. 7), and the detailed description is omitted here.

In FIG. 12, reference numeral 1102 denotes a substrate holder; 1103, a fixing portion; 1101, an element forming substrate (thin metal substrate);
A driving circuit 1104 including a channel TFT and a pixel portion 1105 in which a switching TFT including a p-channel TFT and a current control TFT including an n-channel TFT are provided. In the present embodiment, the TFT
Are all formed of top gate type TFTs.

N-channel TFT and p-channel TFT
The description of the FT may be omitted because it is sufficient to refer to the fourth embodiment.
The switching TFT is a p-channel TFT having a structure (double gate structure) having two channel formation regions between a source region and a drain region. Note that this embodiment is not limited to the double gate structure, and may have a single gate structure in which one channel formation region is formed or a triple gate structure in which three channel formation regions are formed.

The drain region 11 of the current control TFT is
A contact hole is provided in the first interlayer insulating film 1107 before the light-shielding film 1108 is provided on 06. This is to simplify the etching process when forming a contact hole in the light shielding film 1108. A contact hole is formed in the light-shielding film 1108 so as to reach the drain region 1106, and a pixel electrode connected to the drain region 1106 is provided. Pixel electrode is EL
An electrode that functions as a cathode of the element, and is formed using a conductive film containing an element belonging to Group 1 or 2 of the periodic table. In this embodiment, a conductive film made of a compound of lithium and aluminum is used.

As the light-shielding film 1108, a thin film made of a material having a high absorption coefficient for visible light can be used. Typically, an insulating film (preferably a resin film) in which metal particles or carbon particles are dispersed, a metal film having a low reflectance (preferably a titanium film, a titanium nitride film, a chromium film, a molybdenum film, a tungsten film, a tantalum film, A tantalum nitride film) or a semiconductor film can be used. Here, an insulating film in which carbon particles are dispersed is used.

The TF used to form the light shielding film 1108
In order to prevent electrostatic breakdown of T, the specific resistance of the light shielding film 17 is 1 ×
10 ⁶ to 1 × 10 ¹² Ωm (preferably 1 × 10 ⁸ to 1 × 1
It is effective to adjust the addition amount or the particle size of the metal particles or the carbon particles so as to be 0 ¹⁰ Ωm). Here, the light shielding film 110 is formed on the first interlayer insulating film 1107.
Although 8 is provided, the light shielding film 1108 may be laminated with a resin film transparent to visible light.

In this embodiment, the example in which the light-shielding film is formed on the entire surface is shown. However, the light-shielding film may be selectively disposed by performing appropriate patterning. Note that the position where the light-blocking film is formed is not particularly limited, and the light-blocking film may be formed in contact with the light-emitting element or may be formed through an insulating film or a conductive film.

After the state shown in FIG. 12 is obtained, the light emitting device obtained according to the first embodiment absorbs external light to some extent on the surface of the light shielding film 1108 made of an insulating film in which metal particles or carbon particles are dispersed. Because the reflected light is reduced, the outside scene is hardly reflected on the observation surface. Therefore, good image quality can be obtained. Further, since an expensive circularly polarizing film is not used, an inexpensive light emitting device can be provided.

This embodiment can be freely combined with any one of Embodiments 1 to 8.

[Embodiment 10] In this embodiment, FIG. 14 shows an example in which a DLC film (specifically, a diamond-like carbon film) is applied to the present invention as a passivation film.

First, according to the fifth embodiment, the EL layer 1416
And an anode 1417 are formed. Here, the anode 141
As 7, an oxide conductive film containing zinc, for example, zinc oxide (ZnO), an oxide conductive film obtained by adding gallium oxide to zinc oxide, or 2 to 20% of zinc oxide (ZnO) is contained in indium oxide. A transparent conductive film made of an oxide conductive film is used. Passivation film 141 covering this anode
As 8, a DLC film having a thickness of 2 to 50 nm is formed.

The DLC film is formed by ECR plasma C
VD, RF plasma CVD, microwave plasma CVD, or sputtering may be used. The characteristics of the DLC film has a peak of asymmetric about 1550 cm ^-1, a Raman spectrum distribution with a shoulder around 1300 cm ^-1. Also, when measured with a microhardness tester, 15 to
It has the characteristic of exhibiting a hardness of 25 GPa. Such a carbon film has a role of preventing intrusion of oxygen and water and protecting the surface of the resin substrate. In this way, it is possible to prevent a substance that promotes deterioration of the EL layer due to oxidation, such as moisture and oxygen, from entering from the outside. Therefore, a highly reliable E
An L light emitting device is obtained.

Further, the cover material 1405 is
404 is pasted. The cover material 1404
A spacer made of a resin film may be provided to secure an interval between the light emitting device and the EL element. The space 1407 inside the sealing material 1405 is filled with an inert gas such as nitrogen. Note that an epoxy resin is preferably used for the sealant 1405. It is preferable that the sealant 1405 be a material that does not transmit moisture or oxygen as much as possible. Further, a substance having a moisture absorbing effect or a substance having an effect of preventing oxidation may be contained in the space 1407.

In this case, FRP (Fiberglass-R) is used as the material of the plastic substrate forming the cover member 1404.
einforced Plastics), PVF (polyvinyl fluoride), mylar, polyester or acrylic.

After bonding the cover material 1404 using the seal material 1405, a DLC film 1419 is further provided so as to cover the side surface (exposed surface) or the cover material. Here, DLC is provided in a portion where the external input terminal (FPC) is provided.
Care must be taken not to form a film. The DLC film may not be formed using a mask, or the DLC film may be prevented from being formed by covering the external input terminal portion with a tape such as Teflon (registered trademark) used as a masking tape in a CVD apparatus. Is also good.

With the above structure, the EL element is
By encapsulating the EL element in the EL element, the EL element can be completely shut off from the outside, and it is possible to prevent a substance such as moisture or oxygen, which promotes the deterioration of the EL layer from being oxidized, from entering from the outside. Therefore, a highly reliable light-emitting device can be obtained.

Note that this embodiment can be freely combined with any one of Embodiments 1 to 9.

[Embodiment 11] In this embodiment, the tenth embodiment will be described.
Unlike FIG. 15, an example in which a transparent conductive film made of ITO (indium tin oxide alloy) is used as the anode is shown in FIG.
It is shown in (A).

First, an EL layer and an anode are formed in accordance with the fifth embodiment. Here, when a transparent conductive film made of ITO (indium tin oxide alloy) is used as the anode, it is difficult to form a DLC film by lamination. Therefore, in this embodiment, a DLC film having a film thickness of 2 to 50 nm is used after a sealing material made of an organic resin film is formed as a buffer. In addition,
As shown in FIG. 15A, a DLC film 1501 is provided over the entire surface including the back surface of the substrate 1500. However, it is needless to say that the light-emitting element is not limited to the entire surface, and after the light-emitting element is completely covered with the sealing material, at least the DLC film may be provided on the surface (exposed surface) of the sealing material. Here, care must be taken so that the DLC film is not formed in a portion where the external input terminal (FPC) is provided. DL using mask
The C film may not be formed, or the DLC film may not be formed by covering the external input terminal portion with a tape such as Teflon (registered trademark) used as a masking tape in a CVD apparatus.

Thus, even if ITO is used as the anode, D
It can be passivated with an LC film.

This embodiment can be freely combined with any one of Embodiments 1 to 9.

[Embodiment 12] In this embodiment, an example in which a DLC film is provided on an end surface of an EL light emitting device is shown in FIG.

After attaching the fixed substrate, the end face of the EL light emitting device has a structure in which the sealing material used for attaching the fixed substrate is exposed.

In this embodiment, it is possible to prevent a substance such as moisture or oxygen, which promotes deterioration of the EL layer from being oxidized, from entering through the sealing material. Therefore, a DLC film 1511 covering the sealing material 1512 is formed on the end face.

As shown in FIG. 15B, after the light emitting element formed on the substrate 1510 is covered with a sealing material 1512, it is covered with a first DLC film 1511, and the cover material 1513 is further covered with an adhesive material 1515. And a second DLC film 1516 may be formed on the periphery to cover the adhesive. The space 1514 inside the adhesive 1515 may be filled with an inert gas such as nitrogen. Furthermore, space 15
A substance having a moisture absorbing effect or a substance having an effect of preventing oxidation may be contained in the interior of the substrate.

By doing so, it is possible to further prevent the intrusion of a substance which promotes deterioration of the EL layer due to oxidation, such as moisture or oxygen, from the outside. Therefore, a highly reliable light emitting device can be obtained.

When a conductive film transparent or translucent to visible light is used for the pixel electrode, the insulating film in contact with the pixel electrode, that is, the insulating film covering the TFT is made of a material having a high absorption coefficient for visible light. It is preferable to use a thin film (light shielding film). A typical example is an insulating film (preferably a resin film) in which metal particles or carbon particles are dispersed. In such a configuration, external light is almost absorbed by the light-shielding film when it reaches the light-shielding film, and the reflected light is reduced to a level that does not cause a problem. Therefore, it is not necessary to use an expensive circularly polarizing film.

It should be noted that D
An LC film may be formed. However, it is necessary to provide a mask so that it is not formed at a position to be an extraction electrode.

In this embodiment, the example in which the DLC film is formed after removing the substrate holder is described. However, the substrate holder may be removed after forming the DLC film.

This embodiment can be freely combined with any one of Embodiments 1 to 11.

[Embodiment 13] This embodiment shows an example in which a drying agent is arranged on a drive circuit provided on an element forming substrate.

After forming the anode according to the fifth embodiment, the drying agent is placed on the drive circuit and then sealed with a fixed substrate. Placing the drying agent on the drive circuit does not affect the displayed image.

As the drying material, a powdery water-absorbing substance (for example, barium oxide) may be compounded with another material and disposed in a film or solid state. Alternatively, a method of sealing a powdery water-absorbing substance at a certain position with a moisture-permeable sheet may be used.

By doing so, it is possible to prevent the EL layer from being deteriorated due to oxidation of moisture or oxygen from the outside. Therefore, a highly reliable EL light emitting device can be obtained.

This embodiment can be freely combined with any one of Embodiments 1 to 12.

[Embodiment 14] This embodiment differs from the embodiment 13 in that a water-absorbing substance is contained on or in a bank arranged in the pixel portion.

According to the fifth embodiment, after forming the pixel electrodes,
A material layer to be a bank is formed. This material layer contains a water-absorbing substance so as to serve as a desiccant. Alternatively, a laminated structure in which a drying material is provided on a bank is employed.

Next, an EL layer and an anode of an EL element are formed on the pixel electrode.

By doing so, it is possible to prevent deterioration of the EL layer due to oxidation of moisture or oxygen from the outside. Therefore, a highly reliable EL light emitting device can be obtained.

This embodiment can be freely combined with any one of Embodiments 1 to 12.

[Embodiment 15] When the manufacturing method of Embodiment 5 in which the number of masks is reduced is used, it is difficult to form a complicated integrated circuit (memory, CPU, D / A converter, etc.) on the same substrate. It is. Therefore, memory, CPU, D / A
COG (chip on chip)
(glass) or TAB (tape automated bonding). In this embodiment, an example in which a memory circuit is formed in an IC chip and mounted by a COG method will be described.

FIG. 13A is a top view of an EL display device on which an IC chip 1209 is mounted.

Reference numeral 1201 shown by a dotted line denotes a pixel portion;
2 is a source side drive circuit, 1203 is a gate side drive circuit,
1209 is an IC chip. Reference numeral 1204 denotes a fixed substrate, 1205 denotes a first sealing material, and 1206 denotes a second sealing material.

Note that reference numeral 1207 denotes a source side driving circuit 120.
2 and a wiring for transmitting a signal input to the gate side driving circuit 1203, and an FPC which is an external input terminal.
(Flexible print circuit) 1208 receives a video signal and a clock signal. Note that here, FP
Although only C is shown, a printed wiring board (PWB) may be attached to this FPC.

FIG. 13B is a diagram showing a part of a cross section of an EL display device on which an IC chip is mounted.

On a metal substrate 1301, a pixel portion 1302 including an EL element, a lead 1306, a connection wiring, and an input / output terminal 1207 are provided. The fixed substrate 1303 is the first
It is bonded to a metal substrate 1301 with a sealant 1304.

An FPC 1208 is bonded to one end of the connection wiring and the input / output terminal 1207 with an anisotropic conductive material. The anisotropic conductive material is a resin 1315 and conductive particles 1314 having a diameter of several tens to several hundreds μm and plated with Au on the surface.
, Connecting wires and input / output terminals 1207 formed by conductive particles 1314 and wires 13 formed on the FPC 1208.
13 are electrically connected. IC chip 1209
Similarly, a resin 13 is bonded to a metal substrate with an anisotropic conductive material.
The input / output terminal 1309 provided on the IC chip 1209 and the lead wire 1306 or the connection wiring and the input / output terminal 1207 are electrically connected to each other by the conductive particles 1310 mixed in the semiconductor chip 11.

The mounting method of the IC chip is not limited to the method based on FIG. 13, and a known COG method, wire bonding method, or TAB method can be used other than the method described here. .

[Embodiment 16] A drive circuit and a pixel portion formed by carrying out the present invention are used for various electro-optical devices (active matrix type liquid crystal display, active matrix type EL display, active matrix type EC display). Can be. That is, the present invention can be applied to all electronic devices in which the electro-optical device is incorporated in the display unit.

Examples of such electronic equipment include a video camera, a digital camera, a head mounted display (goggle type display), a car navigation, a car stereo, a personal computer, a portable information terminal (a mobile computer, a mobile phone, an electronic book, etc.) Is mentioned. Examples of these are shown in FIGS.

FIG. 16A shows a personal computer, which includes a main body 2001, an image input section 2002, and a display section 20.
03, a keyboard 2004 and the like. Display unit 2 of the present invention
003 can be applied.

FIG. 16B shows a video camera, which includes a main body 2101, a display portion 2102, an audio input portion 2103, operation switches 2104, a battery 2105, and an image receiving portion 210.
6 and so on. The present invention can be applied to the display portion 2102.

FIG. 16C shows a mobile computer (mobile computer) including a main body 2201, a camera section 2202, an image receiving section 2203, operation switches 2204, a display section 2205, and the like. The present invention can be applied to the display portion 2205.

FIG. 16D shows a goggle type display, which includes a main body 2301, a display section 2302, and an arm section 230.
3 and so on. The present invention can be applied to the display portion 2302.

FIG. 16E shows a player using a recording medium (hereinafter, referred to as a recording medium) on which a program is recorded, and includes a main body 2401, a display section 2402, and a speaker section 240.
3, a recording medium 2404, an operation switch 2405, and the like. This player uses a DVD (D
digital Versatile Disc), CD
And the like, it is possible to perform music appreciation, movie appreciation, games, and the Internet. The present invention can be applied to the display portion 2402.

FIG. 16F shows a digital camera, which includes a main body 2501, a display section 2502, an eyepiece section 2503, operation switches 2504, an image receiving section (not shown), and the like. The present invention can be applied to the display portion 2502.

FIG. 17A shows a mobile phone,
01, audio output unit 2902, audio input unit 2903, display unit 2904, operation switch 2905, antenna 290
6. Image input unit (CCD, image sensor, etc.) 2907
And so on. The present invention can be applied to the display portion 2904.

FIG. 17B shows a portable book (electronic book), which includes a main body 3001, display portions 3002 and 3003, a storage medium 3004, operation switches 3005, and an antenna 3006.
And so on. The present invention can be applied to the display units 3002 and 3003.

FIG. 17C shows a display, which includes a main body 3101, a support 3102, a display portion 3103, and the like.
The present invention can be applied to the display portion 3103. Incidentally, the display shown in FIG. 17C is of a small, medium or large size, for example, a screen size of 5 to 20 inches. In addition, in order to form a display portion having such a size, it is preferable to use a substrate having a side of 1 m and mass-produce it by performing multi-paneling.

As described above, the applicable range of the present invention is extremely wide, and can be applied to electronic devices in various fields. In particular, the present invention is advantageous when the device is small, and is useful for reducing the weight of the portable information terminal. Further, the electronic apparatus according to the present embodiment can be realized by using any combination of the embodiments 1 to 15.

[0183]

According to the present invention, it is possible to provide a light-weight and inexpensive light-emitting device by forming a light-emitting element on a flexible film made of a metal substrate.

[Brief description of the drawings]

FIG. 1 is a view showing a step of fixing a substrate to a substrate holder.

FIG. 2 illustrates a manufacturing process.

FIG. 3 illustrates a method for manufacturing a crystalline semiconductor film.

FIG. 4 illustrates a method for manufacturing a crystalline semiconductor film.

FIG. 5 illustrates a process for manufacturing a CMOS circuit.

FIG. 6 illustrates a process for manufacturing a CMOS circuit.

FIG. 7 is a cross-sectional structural view of a driving circuit and a pixel portion of an EL display device.

FIG. 8 is a top view and a cross-sectional view of an EL display device.

FIG. 9 is a top view and a circuit diagram of a pixel in an EL display device.

FIG. 10 is a circuit block diagram of a digitally driven EL display device.

FIG. 11 is a cross-sectional structural view of a driving circuit and a pixel portion of an EL display device.

FIG. 12 is a cross-sectional structural view of a driver circuit and a pixel portion of an EL display device.

13A and 13B are a top view and a part of a cross section of an EL display device.

14A and 14B are a top view and a part of a cross section of an EL display device.

FIG. 15 illustrates a part of a cross section of an EL display device.

FIG. 16 illustrates an example of an electronic device.

FIG. 17 illustrates an example of an electronic device.

FIG. 18 is a diagram showing a conventional example.

Claims (16)

[Claims] An insulating film is provided on a substrate having a metal surface, and a light-emitting element is provided on the insulating film. The light-emitting element is sandwiched between an anode, a cathode, and the anode and the cathode. A light-emitting device comprising an EL material. 2. An insulating film on a substrate having a metal surface and a light emitting element on the insulating film, wherein the light emitting element is sandwiched between an anode, a cathode, and the anode and the cathode. A light-emitting device comprising: an EL material; and a light-shielding film provided in contact with the cathode or through an insulating film or a conductive film. 3. The light emitting device according to claim 1, wherein the substrate having a metal surface is a heat-resistant metal substrate. 4. The light emitting device according to claim 3, wherein said heat resistant substrate has a thickness of 5 μm to 30 μm. 5. The light emitting device according to claim 1, wherein a maximum height (R _max ) of a surface roughness of the substrate having the metal surface is 1 μm or less. 6. The light emitting device according to claim 1, wherein a radius of curvature of a convex portion present on the surface of the substrate having the metal surface is 1 μm or more. 7. The light emitting device according to claim 1, wherein the light emitting device is a video camera, a digital camera, a goggle type display, a car navigation, a personal computer, or a portable information terminal. apparatus. 8. A step of bending an end of a substrate having a metal surface to fix it to a substrate holder; a step of forming an insulating film on the substrate having the metal surface; and forming a light emitting element on the insulating film. And a step of separating the substrate holder. 9. The method for manufacturing a light emitting device according to claim 8, wherein said fixing step is performed in a vacuum. 10. The method for manufacturing a light emitting device according to claim 8, wherein the step of fixing is performed at room temperature to 400 ° C. 11. The method for manufacturing a light emitting device according to claim 8, wherein an end of said substrate holder has a curved surface. 12. The method according to claim 8, wherein the substrate holder has the same coefficient of thermal expansion as the substrate having the metal surface. 13. The method for manufacturing a light-emitting device according to claim 8, wherein the substrate having a metal surface is a heat-resistant metal substrate. 14. The method according to claim 13, wherein the thickness of the heat-resistant metal substrate is 5 μm to 30 μm. 15. The substrate holder according to claim 8, wherein the substrate holder is made of stainless steel, ceramics,
Alternatively, a method for manufacturing a light-emitting device, comprising Al ₂ O ₃ . 16. The method according to claim 15, wherein the thickness of the substrate holder is 500 μm to 1000 μm.