JP2002116455A - Liquid crystal display device, electrode substrate for the same device and method of manufacturing the same device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal display device having high reliability in which cracks of a transparent electrode or the like are prevented without increasing the number of manufacturing processes. SOLUTION: In a liquid crystal display device which is provided with the first substrate 2 provided with a first transparent electrode 6 having a first connecting electrode part 12 which is extended to the area of the outside of a liquid crystal display area and is connected to an external wiring 10, the second substrate 2a provided with second transparent electrodes 6a and the liquid crystal sealed between the first substrate 2 and the second substrate 2a, a first inorganic insulating layer 8 is formed on the first transparent electrode 6 having the first connecting electrode part 12 and the first connecting electrode 12 and the external wiring part 10 are connected electrically with conductive particles 7a embedded on the substrate 2 by penetrating through the first inorganic insulating layer 8.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display, an electrode substrate of the liquid crystal display, and a method of manufacturing the liquid crystal display. More specifically, the present invention relates to a simple matrix type liquid crystal display, and an electrode substrate of the liquid crystal display. And a method for manufacturing a liquid crystal display device.

[0002]

2. Description of the Related Art In recent years, low power consumption, low voltage operation, light weight,
Liquid crystal display devices characterized by thin and color display,
Its use is rapidly expanding to information equipment. Among them, mobile phones, electronic organizers, IC cards, etc. are lightweight,
This market is required to be thin and inexpensive, and a simple matrix type liquid crystal display device is mainly used.

[0003] This simple matrix type liquid crystal display device has:
Two substrates are arranged facing each other, and transparent electrodes are formed on these substrates so as to be orthogonal to each other in a stripe shape. A liquid crystal is sealed between the two base materials, and an intersection between the two transparent electrodes serves as a pixel electrode to control the liquid crystal, whereby an image can be displayed.

Incidentally, in such a simple matrix type liquid crystal display device, in order to prevent a short circuit between the transparent electrodes formed on the two substrates and to improve the reliability of the liquid crystal display device. In some cases, a cover film is formed on a transparent electrode. In addition, when a plastic film or the like is used as a base material of a liquid crystal display device, since the plastic film has high air permeability and moisture permeability, bubbles may be generated in the liquid crystal or the liquid crystal display device may be deteriorated by moisture. In addition, the plastic film needs to have gas barrier properties.

For example, JP-A-61-18925 discloses that an inorganic barrier layer is provided on a transparent electrode because a plastic film has high air permeability and high moisture permeability. Also, JP-A-6-18867 discloses that
It is disclosed that a silicon oxide film having a gas blocking ability is formed on a transparent electrode formed on a plastic film.

[0006]

However, when a cover film is formed on the transparent electrode for the above-mentioned purpose, the connection electrode portion of the transparent electrode extending from the liquid crystal display region on the base material to the outside region is also formed. A cover film is formed. For this reason, in order to electrically connect the wiring of the external circuit substrate and the connection electrode portion, a special process of removing the cover film on the connection electrode portion is required. Therefore, the number of manufacturing steps increases,
Problems such as a decrease in product yield and an increase in product cost become problems.

Further, in the conventional method, since the cover film is not substantially present at the connection electrode portion of the transparent electrode, when the plastic film is used as the base material, the distortion of the plastic film under high temperature or high humidity conditions Accordingly, there is a problem that a crack is easily generated in the connection electrode portion of the transparent electrode. The present invention has been made in view of the above problems, and has a highly reliable liquid crystal display device capable of preventing the occurrence of cracks or the like in a transparent electrode without increasing the number of manufacturing steps, and an electrode substrate of the liquid crystal display device. And a method for manufacturing a liquid crystal display device.

[0008]

In order to solve the above-mentioned problems, the present invention relates to a liquid crystal display device, comprising a first connection electrode portion extending from a display area to an outside area and connected to an external wiring. A first base material provided with a first transparent electrode,
In a liquid crystal display device having a second base material provided with a second transparent electrode, and a liquid crystal layer sealed between the first base material and the second base material, the first connection A first inorganic insulating layer is formed on a first transparent electrode having an electrode portion, and the first connection electrode portion and the external wiring are embedded in the first inorganic insulating layer by penetrating the first inorganic insulating layer. Characterized by being electrically connected via the conductive particles.

According to the present invention, an inorganic insulating layer is formed over the entirety of the transparent electrode having the first connection electrode portion,
The first connection electrode portion and the external wiring are connected to each other through the conductive particles embedded in the inorganic insulating layer, that is, without removing the inorganic insulating layer by adding a special process. Are electrically connected by a structure penetrating the inorganic insulating layer.

When a plastic film is used as a base material, since the plastic film has high air permeability and moisture permeability, bubbles may be generated in the liquid crystal layer, and the liquid crystal display device may be deteriorated by moisture. Therefore, a plastic film having a gas barrier layer formed thereon is used. In the present invention, in addition to the gas barrier layer, an inorganic insulating layer that blocks intrusion of air, moisture, and the like is formed on the transparent electrode, so that bubbles are generated in the liquid crystal layer, or the moisture deteriorates the liquid crystal display device. Can be further prevented.

When a plastic film is used as a base material, the plastic film is liable to be distorted under high temperature and high humidity conditions, so that the transparent electrode is apt to crack. In the present invention, the conductive particles penetrate the inorganic insulating layer so that the inorganic insulating layer exists not only on the transparent electrode in the display region but also on the connection electrode portion of the transparent electrode in a region outside the liquid crystal display region. Thus, the structure is partially embedded in the inorganic insulating layer.

As a result, the inorganic insulating layer substantially exists also on the connection electrode portion of the transparent electrode. Therefore, even if the plastic film is distorted under high-temperature and high-humidity conditions, even if the plastic film is distorted, In addition to the transparent electrode described above, the occurrence of cracks in the connection electrode portion of the transparent electrode can be suppressed. In the above liquid crystal display device, the thickness of the inorganic insulating layer is preferably 5 nm or more and 30 nm or less.

When a plastic film is used as a substrate, it is necessary to consider the thermal characteristics and hardness of the plastic film as a pressure bonding condition for the conductive particles to penetrate the inorganic insulating layer. That is, if the conductive particles penetrate the inorganic insulating layer on the transparent electrode under pressure bonding conditions that cause distortion in the plastic film, cracks may occur in the transparent electrode due to distortion of the plastic film.

The inventors of the present invention have conducted intensive studies focusing on this point. As a result, when a plastic film is used as a base material, the thickness of the inorganic insulating layer is set to a range of 5 nm or more and 30 nm or less, so that a transparent electrode can be formed. It has been found that the conductive particles can penetrate the inorganic insulating layer and the connection electrode portion of the transparent electrode and the external wiring can be conducted through the conductive particles without cracks.

Further, in order to solve the above-mentioned problems, the present invention relates to a method for manufacturing a liquid crystal display device, which extends from a liquid crystal display region on the base material to a region outside the liquid crystal display region on the base material in order from the bottom. Forming a structure in which a transparent electrode having a connection electrode portion formed and an inorganic insulating layer formed on the transparent electrode having the connection electrode portion are laminated, and the connection electrode portion and external wiring are anisotropic. Electrically connecting the connection electrode portion and the external wiring by pressure-bonding through the conductive layer and penetrating the inorganic insulating layer with conductive particles contained in the anisotropic conductive layer. It is characterized by.

According to the present invention, the connection electrode portion of the transparent electrode and the external wiring are electrically connected without any additional step of removing the inorganic insulating layer formed on the connection electrode portion. Can be done. That is, the connection electrode portion and the external wiring are electrically connected by penetrating the inorganic insulating layer with the conductive particles contained in the anisotropic conductive layer by pressing the connection electrode portion and the external wiring through the anisotropic conductive layer under predetermined conditions. be able to.

By doing so, it is possible to easily manufacture the above-mentioned liquid crystal display device in which the inorganic insulating layer also exists in the connection electrode portion of the transparent electrode. In addition, since a step of removing the inorganic insulating layer on the connection electrode portion of the transparent electrode is not required, the manufacturing yield can be improved, and an increase in product cost can be suppressed.

[0018]

Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1A is a sectional view showing a liquid crystal display device according to an embodiment of the present invention.
FIG. 1B is an enlarged cross-sectional view of the portion A in FIG.
FIG. 2C is a side view of the portion A in FIG.

As shown in FIG. 1A, the liquid crystal display device of the present embodiment has a first film 2 made of plastic as an example of a first base material (a polyether sulfone film manufactured by Sumitomo Bakerate Co., Ltd.). A second film 2a (a polyether sulfone film manufactured by Sumitomo Bakerate Co., Ltd.), which is an example of a second base material, is disposed to face the liquid crystal layer 11 therebetween.

As the plastic film, a film made of polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyarylate or the like having a thickness of 50 to 500 μm and having optical flatness can be used. Although not shown, an anchor layer is formed on the surface of the first and second films 2 and 2a on the liquid crystal layer 11 side, and on the surface opposite to the liquid crystal layer 11 side, from below. In order, anchor layer, S
gas barrier layer and a hard coat layer made of iO _X layer is formed. As described above, a film on which a gas barrier layer or the like is formed in advance is used as the first and second films 2 and 2a in order to reduce air permeability and moisture permeability to some extent.

On the first film 2, a protective layer 5 is adhered to the first film 2 via an adhesive layer 4.
Further, the first transparent electrode 6 made of an ITO (Indium tin oxide) film is formed in a stripe shape so as to be embedded in the protective layer 5. On the first transparent electrode 6, a first SiO ₂ layer 8, which is an example of a first inorganic insulating layer, is formed with a thickness of, for example, 5 to 30 nm.

On the other hand, a protective layer 5a is provided on the first film 2 side of the second film 2a via an adhesive layer 4a.
On the film 2a. Further, a second transparent electrode 6a made of an ITO film is formed so as to be embedded in the protective layer 5a so as to be orthogonal to the stripe pattern of the first transparent electrode 6. On the second transparent electrode 6a, the second
The second SiO ₂ layer 8a, which is an example of the inorganic insulating layer, is formed with a thickness in the range of, for example, 5 to 30 nm.

Further, the first SiO ₂ layer 8 and the second Si
On the liquid crystal layer 11 side on the O ₂ layer 8a, the liquid crystal layer 1
Alignment films 16 and 16a for giving the liquid crystal material 1 alignment properties are formed. The liquid crystal material forming the liquid crystal layer 11 is sealed by a sealing material 14 provided at a peripheral portion between the first and second films 2 and 2a. The sealing material 14 is formed on the first SiO ₂ layer 8 and the second SiO ₂ layer 8a formed on the peripheral portions of the first and second films 2 and 2a. As will be described later, a predetermined region of the seal material 14 formed on the peripheral portion between the first and second films 2 and 2a has a predetermined area in which conductive particles are mixed in the seal material. A conductive material is formed.

The first film 2 has an area A projecting from the liquid crystal display area to an area outside the liquid crystal display area, and the first transparent electrode 6 has a first connection electrode section 12 extending from the liquid crystal display area. Are formed. Then, the first connection electrode portion 12
Are connected to the wiring 10 of the circuit substrate which is an external wiring. In this manner, the scanning electrode base material 18 based on the first film 2 and the signal electrode base material 17 based on the second film 2a are arranged to face each other with the liquid crystal layer 11 interposed therebetween. The liquid crystal display device 19 is configured.

Here, the first film 2 is formed on the portion A.
Between the formed first connection electrode portion 12 and the wiring 10 of the circuit base material
A detailed description of the connection unit will be given. As shown in FIG.
The first SiO 2 is provided on the first connection electrode portion 12._TwoLayer 8 is formed
And the anisotropic conductive layer 7 (hereinafter referred to as ACF (An-isotropic C
onductive Film) has a diameter of, for example, 5
The conductive particles 7a having a size of 10 μm to 10 μm _TwoPierce layer 8
It is broken and embedded in a partial area.
One surface of the conductive particles 7a is connected to the first connection electrode 12
And the other surface of the conductive particles 7a is polyimide
Arrangement of a circuit substrate composed of the film 10a and the copper layer pattern 10b
It is in contact with the copper layer pattern 10b of the line 10.

ACF7 (for example, CP7131 manufactured by Sony Chemical Co., Ltd.) comprises conductive particles 7a and a binder layer 7b.
_{The two} layers 8 and the wiring 10 of the circuit base material are stuck together. In this manner, the first connection electrode portion 12 and the wiring 10 of the circuit substrate are formed.
And are electrically connected. When this state is viewed from the outer side surface of the liquid crystal display device 19, as shown in FIG.
A first SiO ₂ layer 8 is formed on the first connection electrode section 12, and a wiring 10 of a circuit board is crimped thereon via an ACF 7.

FIG. 2A is a cross-sectional view in which a cross section along II and a cross section along II-II in FIG.
FIG. 2B is a partial schematic cross-sectional view enlarging a portion C in FIG. As shown in FIGS. 2A and 2B, the third connection electrode portion 12b of the second transparent electrode 6a is provided at the right end of the surface of the second film 2a on the liquid crystal layer 11 side. Is formed, and a second connection electrode portion 12a is formed in the portion A (FIG. 1A) on the first film 2.

An upper and lower conductive material 14a (for example, a seal material is provided on the sealing material) between the third connecting electrode portion 12b on the second film 2a and the second connecting electrode portion 12a on the first film 2. The liquid crystal layer 11 is sealed by forming a micropearl AU (conducting conductive particles) manufactured by the company. Due to the conductive particles 13 contained therein, the upper and lower conductive material 14a exhibits conductive anisotropy that is conductive only in the thickness direction when a predetermined gap between the substrates is formed.

In the liquid crystal display device of the present embodiment, as shown in FIG. 2B, the first SiO ₂ layer 8 on the second connection electrode portion 12a and the first SiO ₂ layer 8 on the third connection electrode portion 12b are formed. 2 SiO ₂ layer 8a and conductive particles 1 in vertical conductive material 14b.
It has a structure that breaks through at 3. As a result, the third connection electrode portion 12b on the second film 2a and the second connection electrode portion 12a formed on the portion A of the first film 2 are electrically connected via the conductive particles 13. Have been.

That is, in part A on the first film 2,
Not only the connection electrode portion 12 of the first transparent electrode 6 but also the second connection electrode portion 1 electrically connected to the third connection electrode portion 12b of the second transparent electrode 6 via the vertical conductive material 14a.
2a is formed. The second connection electrode portion 12a has an ACF like the first connection electrode portion 12.
7 electrically connects to the wiring 10 of the circuit substrate. By doing so, the first connection electrode portion 12 of the first transparent electrode 6 and the second connection electrode portion 12a of the second transparent electrode 6a are combined into a portion A on the first film 2. Since they can be arranged, the mounting structure of the liquid crystal display device can be simplified.

In the present embodiment, the upper and lower conductive members 14a are formed in a region between the third connection electrode portion 12b and the second connection electrode portion 12a in the region where the sealing material of the liquid crystal display device is formed. Is formed, and the sealing material 14 that does not include the conductive particles 13 is formed in other regions. However, the vertical conductive material 14b is formed in all the regions where the sealing material is formed. May be used. In the case of this mode, except that the second connection electrode portion 12a and the third connection electrode portion 12b are electrically connected, other transparent electrodes are not electrically connected by the upper and lower conductive members 14b.
It is sufficient that the first and second transparent electrodes 6 and 6a do not exist in the region where the vertical conductive material is formed.

Further, in the present embodiment, only one second connection electrode portion 12a is illustrated for ease of explanation, but actually, the second connection electrode portion 12a is connected to each of the plurality of second transparent electrodes 6a. Needless to say, a plurality of second connection electrodes 12a are formed. According to the liquid crystal display device of the present embodiment, the first SiO ₂ layer 8 is formed on the first transparent electrode 6 having the first connection electrode section 12, and the first connection electrode section 12 and the circuit base material are formed. Of the first SiO ₂ layer 8
ACF7 partially embedded in this
Are electrically connected via the conductive particles 7a. Further, the second connection electrode portion 12a and the third connection electrode 12b are electrically connected in a structure in which the conductive particles 13 in the vertical conductive material 14b pierce the first and second SiO ₂ layers 8, 8a. It is connected.

Since the first film 2 has high air permeability and high moisture permeability, a gas barrier layer is formed on the first film 2. However, the gas barrier layer is formed on the first transparent electrode 6 and the second transparent electrode 6 a. The first and second S also block the ingress of air and moisture.
Since the iO ₂ layers 8 and 8a are further formed, bubbles are generated in the liquid crystal layer 11 or the liquid crystal display device 19
Can be further prevented from deteriorating.

Further, not only on the first transparent electrode 6 in the liquid crystal display area, but also on the first connection electrode section 12, the second connection electrode section 12a and the third connection electrode section 12b. This means that the first SiO ₂ layer 8 or the second SiO ₂ layer 8a is formed. As a result, even if the first film 2 is distorted under high-temperature or high-humidity conditions, cracks occur not only in the first transparent electrode 6 but also in the connection electrode portions such as the first connection electrode portion 12. Can also be prevented.

The sealing material 14 for sealing the liquid crystal layer 11
Since the upper and lower conductive members 14a are formed on the first SiO ₂ layers 8 and 8a having good adhesion to them, the strength of bonding between the scanning electrode substrate 18 and the signal electrode substrate 17, that is, Performance can be improved. Therefore, leakage of the liquid crystal layer 11 can be prevented even under high temperature and high humidity conditions or when an impact is applied, so that the reliability of the liquid crystal display device 19 can be improved.

In this embodiment, the first and second SiO ₂ layers 8 and 8a have been exemplified as the first and second inorganic insulating layers. However, silicon-containing insulating layers such as a silicon nitride layer and a SiO _X layer. Alternatively, a metal oxide layer such as an aluminum oxide layer may be used. Also, the adhesive layer 4 on the first film 2
A structure in which a color filter layer including R (red), G (green), and B (blue) color pixels made of colored polyimide is formed between the protective film 5 and the protective film 5 may be used.

Further, in this embodiment, the plastic film is used as the first and second base materials, but a glass substrate may be used instead of the plastic film. Next, a method for manufacturing the liquid crystal display device of the present embodiment will be described.
3A to 3D are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to an embodiment of the present invention in the order of steps. Note that FIG.
The sectional view on the left side of FIG. 3C is a sectional view along the line III-III of the plan view on the right side of FIG.

In the method of manufacturing the liquid crystal display device 19 of the present embodiment, a transfer layer is formed on a glass substrate, which is a temporary substrate, and then the transfer layer is transferred to a plastic film, whereby the electrode of the liquid crystal display device 19 is formed. A method of forming a substrate is used. First, a glass substrate 20 made of a silica-coated blue plate glass, which is a temporary substrate, is prepared. continue,
As a coating solution for forming a release layer, pyrometic anhydride is reacted with 4,4′-diaminodiphenyl ether, and a silane coupling agent is applied to the resulting polyimide precursor varnish (dimethylacetamide solution, solid content ratio 10%). KBM-573 (manufactured by Shin-Etsu Silicon Co., Ltd.)
A solution containing 5 wt% (solid content ratio) is prepared.

Thereafter, as shown in FIG. 3A, the above-mentioned coating solution is applied on a glass substrate 10 by a spin coater at 900 rpm for 12 seconds, and dried to form a coating film. Subsequently, this coating film was heated on a hot plate at 260 ° C. for 10 minutes, dehydrated and closed to form a ring.
A release layer 22 made of a polyimide layer having a thickness of μm is formed.

Next, a substrate temperature of 230.degree.
The first SiO ₂ layer 8 having a thickness of 5 to 30 nm, which is an example of the first inorganic insulating layer, is formed by the sputtering method under the following conditions. At this time, by forming the first SiO ₂ layer 8 in a vacuum film under the condition of a high temperature side, it is possible to obtain a dense one having good protection characteristics. In addition, CVD (Chemical Vapor Deposition)
position) method, the first SiO ₂ layer 8 may be formed.

[0041] Next, FIG. 3 (b), the film thickness by a sputtering method on the first SiO ₂ layer 8 is for example 150
An ITO film 6b having a thickness of nm is formed. Here, the film characteristics of the transparent electrode (ITO film) according to the liquid crystal display device of the present embodiment will be described in detail. The film characteristics required for the transparent electrode according to the liquid crystal display device of the present embodiment include good light transmittance and low resistance, as well as conductive particles 7
It is also important to have a resistance to the force received when breaking through the first SiO ₂ layer 8 with a. That is, the present embodiment is an example of a method for manufacturing the liquid crystal display device 19 based on transferring a transfer layer onto a plastic film. The plastic film is softer than a glass substrate, and thus is made of conductive particles. When a pressing force acts, the transparent electrode on the soft plastic film is deformed, and the transparent electrode is easily cracked.

When an ITO film is formed directly on a plastic film, the plastic film must be formed on a low temperature side near room temperature because of its low heat resistance. Therefore, the I film formed directly on the plastic film
The TO film is amorphous, soft, and has good etching processability, but has high sheet resistance, poor transparency, and poor connection characteristics with conductive particles. For this reason, even in a mode in which the inorganic insulating layer is not formed on the connection electrode portion of the transparent electrode connected to the external wiring, Ricoh Technical Report 82 to 87 No.23, (199
As described in 7), various contrivances are required for connection using conductive particles.

However, in the present embodiment, since an ITO film can be formed at a relatively high temperature on a glass substrate having high heat resistance, the ITO film has crystallinity and low sheet resistance.
A highly transparent ITO film can be formed. Furthermore, by forming the ITO film at a relatively high temperature,
A film having high hardness is formed. By using such an ITO film having a high hardness as a transparent electrode, when the transparent electrode and the external wiring are pressure-bonded via an anisotropic conductive layer, even if an inorganic insulating layer is present on the transparent electrode, the inorganic film is formed of inorganic material. When the thickness of the insulating layer is equal to or less than a predetermined thickness, the conductive particles in the anisotropic conductive layer can penetrate the inorganic insulating layer to enable electrical connection between the external wiring and the transparent electrode. The transparent electrode according to the liquid crystal display device of the present embodiment has good light transmittance and low resistance, and is formed to have such film characteristics.

7 to 9 show that the size of the crystal of the ITO film is S.
Photographed by EM (Scanning Electron Microscope). As shown in FIG. 7, when an ITO film is formed by an ion plating method at a substrate temperature of, for example, 250 ° C., a crystalline IT having a crystal grain size of 0.01 to 0.1 μm is formed.
An O film is formed. As shown in FIG. 8, when an ITO film is formed by an ion plating method at a substrate temperature of, for example, 200 ° C., the crystal grain size becomes 0.01 to 0.05 μm.
Is formed. As shown in FIG. 9, when an ITO film is formed by a sputtering method at a substrate temperature of, for example, 200 ° C., a crystalline ITO film including elongated crystal grains and having a crystal grain size of 0.01 to 0.1 μm is obtained. A film is formed.

As described above, under the film forming conditions as described above, I
By forming a TO film, the crystal grain size is 0.1 μm
Or less, for example, a sheet resistance of 10
１５15Ω / port can be formed. The thickness of the ITO film according to the present embodiment is, for example, 100 to 200 n.
m, and the hardness of the film can be measured using an ultra-micro hardness tester. This ultra-micro hardness tester is equipped with a displacement gauge in the indenter drive, measures the indentation depth of the indenter, and calculates the hardness from the indentation depth.
By continuously measuring this, information such as the amount of elastic deformation, the amount of plastic deformation, and the amount of creep deformation while the test force is held can be obtained. For details, see Journal of the Japan Society of Precision Engineering (Vol. 62, No. 2, Separate Volume, published February 5, 1996)
Please refer to “Evaluation of Surface by Ultra-micro Hardness Tester of Depth Depth Measurement System” (paragraphs 224 to 229).

The inventors of the present application measured the physical properties of the ITO film using this ultra-micro hardness tester. That is, first, an ITO film having a thickness of 150 nm was formed on a rigid glass substrate by any one of the above-described film forming methods. A load is applied to a predetermined portion of the ITO film by an indenter of a micro-hardness tester, and the ITO film is pushed by 10% (about 15 nm) of the film thickness of the ITO film. The amount was determined.

It was found that in the ITO film formed under the above-described film forming conditions, there was almost no plastic deformation and almost all the elastic deformation. That is, ITO
It means that 10% (about 15 nm) of the thickness of the film is pressed by an indenter to form a dent, and then the dent is almost eliminated when the load is released. It was confirmed that the film had high hardness.

As described above, the inventors of the present invention have conducted intensive studies on the physical properties of the ITO film according to the present embodiment, and as a result, have found that the ITO film applied to the transparent electrode of the liquid crystal display device according to the embodiment of the present invention.
As the film, the thickness of the ITO film was 10
%, It is preferable that the elastic deformation amount is larger than the plastic deformation amount, and the Young's modulus is 2 ×
It has been found that those larger than 10 ⁴ kgf / mm ² are preferable.

Next, the description returns to the description of the method for manufacturing the liquid crystal display device of the present embodiment. After the ITO film 6b is formed by the method described above, a resist film (not shown) is patterned by photolithography so that the ITO film 6b has a stripe pattern as shown in FIG. The first transparent electrode 6 is formed by etching the ITO film 6b using the resist film as a mask. At this time, as shown in the plan view on the right side of FIG. 3C, the first connection electrode portion 12 in which the first transparent electrode extends is formed on the periphery of the glass substrate 20. Also, at the same time,
The second connection electrode portion 12a (see FIG. 2) is formed so as not to short-circuit with the first connection electrode portion 12.

Next, a coating is formed on the first transparent electrode 6.
Agent (manufactured by JSR: Optmer SS-6917)
To form a protective layer 5 having a thickness of 3 μm. this
The Young's modulus of the protective layer 5 is measured with the above-mentioned ultra-micro hardness tester.
1100kgf / mm ^TwoForm
You. Next, an ultraviolet curable resin (Asahi Denka
(KR-400) spacer particles with a particle size of 4 μm
(Nippon Shokubai Co., Ltd .: Eposter GP-H)
Spray so that the film thickness is about 6μm
To form the adhesive layer 4. In this way,
The transfer layer 24 is formed on the lath substrate 20.

Next, a method of transferring the transfer layer 24 formed on the glass substrate 20 to a plastic film will be described. First, as an example of a first base material, a first film 2 (manufactured by Sumitomo Bakelite Co., Ltd .: polyethersulfone film) having a thickness of 150 μm made of a plastic material to which the transfer layer 24 is transferred is prepared. After washing with ultrasonic waves and drying, it is further dried in a clean room for 2 days.

Thereafter, as shown in FIG. 3D, the first film 2 is placed on the adhesive layer 4 on the glass substrate 20 on which the transfer layer 24 has been formed. Next, from the side of the first film 2, 300
By performing UV irradiation of 0 mJ / cm ² , the adhesive layer 4, which is a photocurable resin, is cured, and the first film 2 is bonded to the glass substrate 20 having the transfer layer 24. At this time, the thickness of the adhesive layer 4 is about 6 μm, but becomes 4.5 to 5.5 μm.

Next, as shown in FIG. 4A, one end of the first film 2 bonded to the glass substrate 20 is fixed to a roll 24 having a diameter of, for example, 200 mm. When the film 2 is peeled off, the film 2 is peeled off from the interface between the glass substrate 20 and the release layer 22. At this time, it is preferable to perform the treatment while applying water to the separation interface between the glass substrate 20 and the separation layer 22. By applying water to the peeling interface, the glass substrate 20 and the peeling layer 22 can be easily peeled at the interface, and transfer can be performed stably. Thus, the release layer 22, the first Si
O ₂ layer 8, first transparent electrode 6, protective layer 5, and adhesive layer 4
Is transferred to the film 2 side.

Next, as shown in FIG.
By dipping the first film 2 to which the No. 4 has been transferred into a mixed solution having a hydrazine to ethylenediamine ratio of 1: 1, only the release layer 22 on the first film 2 is removed. The release layer 22 may be removed by using another alkaline aqueous solution or oxygen plasma. At this time, the release layer 2
2, a first SiO ₂ layer 8 exists.
etchant iO ₂ layer 8 is peeled off layer 22 is the first SiO ₂
It also functions as a blocking film for preventing seepage into a layer below the layer 8. That is, the etching solution of the peeling layer 22 penetrates into the interface between the transparent electrode 6, the protective layer 5, the adhesive layer 4, and the respective layers of the first film 2, thereby causing adhesion such as partial peeling at the interface between the layers. It is possible to prevent the property from being adversely affected. Also, the first S
The iO ₂ layer 8 has a function of protecting the transparent electrode 6 and the protective layer 4 even when the release layer 22 is removed using oxygen plasma.

Next, an alignment film 16 is formed in a region other than the region A where the first connection electrode portion 12 is formed, and in a region where a sealing material for sealing liquid crystal is not formed in a later step.
As described above, the scanning electrode substrate 18 of the liquid crystal display device of the present embodiment is completed. Next, the signal electrode substrate 17 which is the opposite substrate of the scanning electrode substrate 18 is manufactured by the same method as described above.
In addition, on the signal electrode base material 17, a second transparent electrode extends from the display portion to the outside region, and the third connection electrode portion 12b
(See FIG. 2).

Thus, the scanning electrode base 18 and the signal electrode base 17 are connected to the first transparent electrode 6 and the second transparent electrode 6.
The surfaces on which the alignment films 16 and 16a are formed are arranged so as to face each other such that a is orthogonal to each other. Then, the sealing material 14 is applied to the peripheral portion of one of the base materials, and the scan electrode base material 18 and the signal electrode base material 17 are joined. Here, the third connection electrode portion 12b of the second transparent electrode on the signal electrode substrate 17 and the second connection portion 12b on the scan electrode substrate 18
a is electrically connected via the upper and lower conductive members 14b as described in FIG. The upper and lower conductive members 1 are provided in an area where the third connection electrode portion 12b on the signal electrode base material 17 and the second connection portion 12a on the scan electrode base material 18 are electrically connected.
4b is formed, and the sealing material 14 containing no conductive particles 13 may be formed by applying a sealing material separately by a precision dispenser, printing, or the like so as to form a sealing material 14 that does not contain the conductive particles 13. In addition, as described in the liquid crystal display device of the above-described embodiment, the upper and lower conductive members 14a may be formed in all the regions to form the seal material.

At this time, the sealing material 14 and the vertical conductive material 1
4b is formed on the first SiO ₂ layer 8 having good adhesion to these, so that the scan electrode base 18 and the signal electrode base 17 are formed.
, Ie, adhesion, can be improved. Thereafter, a liquid crystal material is injected between these base materials to form a liquid crystal layer 11, and the liquid crystal filling port is sealed with a resin.

As described above, the first and second connection electrode portions 1
Scanning electrode base material 18 and signal electrode base material 1 having 2, 12a
Thus, the liquid crystal display device in which the liquid crystal layer 11 is sealed between the liquid crystal display device 7 and the liquid crystal display device before being connected to the wiring of the circuit substrate is completed. Next, a method of electrically connecting the first and second connection electrode portions 12, 12a to external wiring will be described. The wiring 10 of the circuit substrate, which is an example of the external wiring, is a so-called flexible wiring material in which a copper layer pattern 10b of 8 μm is formed on a polyimide layer 10a having a thickness of 25 μm.

First, the first SiO ₂ of the scanning electrode substrate 18
The area A portion having the first connection electrode portion 12 covered with the layer 8 and the surface of the copper layer pattern 10b of the wiring 10 of the circuit substrate are pressure-bonded via the ACF7 (CP7131 manufactured by Sony Chemical Co., Ltd.). to paste together. A crimping device uses an ACF connection device (manufactured by Osaki Engineering Co., Ltd.), pressure: 20 gf
/ Cm ² , crimping temperature: 160 ° C. (125 ° C. on the substrate),
Crimping time: 20 seconds.

On the first connection electrode portion 12, a first S
iO_TwoThe layer 8 is formed with a thickness of, for example, 5 to 30 nm.
As shown in FIG. 1B, the ACF 7
The conductive particles 7a contained therein have a film thickness by pressing.
5-30 nm first SiO _TwoBreak through layer 8
SiO_TwoEmbedded in layer 8. In this way, the conductivity
One spherical surface of the particle 7a is in contact with the first connection electrode portion 12.
The other spherical surface contacts the copper layer pattern 10b.
With this, the first connection electrode portion 12 and the copper layer pattern 10b are electrically connected.
It is connected pneumatically.

The second connection electrode portion 12a of the second transparent electrode 6a on the signal electrode substrate 17 and the second connection electrode portion 12a connected to the third connection electrode portion 12b by the upper / lower conductive member 14b are formed in a similar manner. Is connected to the wiring 10. As described above, the liquid crystal display device 19 of the present embodiment is completed. According to the manufacturing method of the liquid crystal display device 19 of the present embodiment, the first SiO ₂ layer 8 is formed on the first transparent electrode 6, and the first SiO ₂ layer 8 is formed on the first connection electrode 12 of the first transparent electrode 6. The first connection electrode section 12 and the wiring 10 of the circuit substrate can be electrically connected without requiring a step of removing the one SiO ₂ layer 8. By doing so, the production yield can be improved,
An increase in product cost can be suppressed.

(Investigation by the inventor of the present application) (1) Confirmation of crack generation in transparent electrode In the manufacturing method of the present embodiment, the thickness of the first SiO ₂ layer 8 formed on the first transparent electrode 6 is reduced. 0 nm, 5 nm, 10
and the scanning electrode substrate 18 was changed to 30 nm.
Was manufactured. Then, for each electrode substrate, 16
After performing a heat treatment test at 0 ° C. and a high-temperature and high-humidity test at a temperature of 60 ° C. and a humidity of 90%, the first transparent electrode 6 was visually inspected for the occurrence of cracks. The film thickness is 5n.
The ITO film (first transparent electrode) thinner than m tends to cause defects, and it was difficult to apply the film to the liquid crystal display device of the present embodiment.

The first S formed on the first transparent electrode 6
The thickness of the iO ₂ layer 8 is 5 nm, 10 nm and 30 nm.
In the two samples, no cracks occurred in the first transparent electrode 6 even after the heat treatment test and the high-temperature high-humidity test. However, in the sample in which the first SiO ₂ layer 8 was not formed, there was no problem in the heat treatment test at 120 ° C., but wrinkles occurred in the first transparent electrode 6 in the heat treatment test at 160 ° C. In a high-temperature and high-humidity test at a temperature of 60 ° C. and a humidity of 90%, it was confirmed that cracks occurred in the first transparent electrode 6.

As described above, the inventor of the present application provided the first transparent electronic device.
First SiO having a thickness of, for example, 5 to 30 nm on the pole 6_Twolayer
8 to form cracks in the first transparent electrode 6.
It has been confirmed that the occurrence of the problem can be prevented. (2) ACF connection between the first connection electrode portion and the external wiring
Subsequent test According to the manufacturing method of the present embodiment, a shape is formed on the first transparent electrode 6.
First SiO to be formed _TwoThe thickness of the layer 8 is 0 nm, 5 nm,
5 currents were changed to 10 nm, 30 nm and 40 nm.
An electrode substrate was prepared. And the transparent electrode on the electrode substrate
Electrical connection test between the connection electrode part of 1 and the wiring of the circuit substrate
Was done.

FIG. 5 is a schematic plan view showing a method of an electrical connection test between the first transparent electrode 6 and the wiring 10d of the circuit substrate. As shown in FIG. 5, the pattern of this connection test has a film thickness of 8 μm on a polyimide film 10 a having a thickness of 25 μm on a region where the first transparent electrode 6 is formed in a stripe shape.
The structure is such that three connection electrodes 30, 32, and 34 of a flexible wiring material coated with a copper layer pattern 10b of μm are bonded via an ACF. The two measuring electrodes 36 and 38 are connected to the connection electrode 30 via the wiring 10d.
Are connected, and measurement electrodes 40 and 42 are connected to the connection electrodes 32 and 34 via the wiring 10d, respectively. The dimension between the connection electrode 30 and the connection electrode 32 and the dimension between the connection electrode 32 and the connection electrode 34 are each 4 mm. This connection test pattern is a pseudo pattern for performing an electrical connection test between the first connection electrode section 12 and the wiring 10 of the circuit substrate in FIGS. 1A to 1C.

Here, a detailed description will be given of part B in FIG.
FIG. 6A is an enlarged plan view in which a portion B in FIG. 5 is enlarged.
As shown in FIG. 6A, the first transparent electrode 6 has a stripe pattern having a line: space of 65 μm: 15 μm, and a connection electrode 34 made of a copper layer pattern is formed on the first transparent electrode 6. However, they are bonded via the ACF 7 so that the connection area becomes 4 mm □. Although not shown, a polyimide layer serving as a circuit substrate is covered over a wide range on the connection electrode 34.

FIG. 6B is a sectional view taken along the line IV-IV of FIG. As shown in FIG. 6B, the adhesive layer 4, the protective layer 5, and the
A first transparent electrode 6 and a first SiO ₂ layer 8 are formed,
The polyimide film 10 is formed by the first transparent electrode 6 via the conductive particles 7 a of the ACF 7 embedded in the first SiO ₂ layer 8.
a is connected to the copper layer pattern 10b formed on the substrate a. Further, the first film 2 and the wiring 10 of the circuit substrate are adhered by the binder layer 7b of the ACF 7.

FIG. 6C is a side view of the state in which the first transparent electrode 6 and the copper layer pattern 10b are attached to each other as viewed from the direction V in FIG. 6A. 1C, a first SiO ₂ layer 8 is formed on the first transparent electrode 6, and an ACF 7 is pressed thereon to form the first transparent electrode 6.
And the copper layer pattern 10b are connected.

The pressure bonding for connecting the first transparent electrode 6 to the copper layer pattern 10b via the ACF 7 is performed using an ACF connection device manufactured by Osaki Engineering Co., Ltd.
gf / cm ² , compression temperature: 160 ° C. (temperature on substrate: 1)
25 ° C.), crimping time: 20 seconds, crimping area: 4 mm □ (1
6 mm ² ). In this way, in order to conduct a connection test between the first connection electrode 12 and the wiring 10 of the circuit substrate, five samples in which the thickness of the first SiO ₂ layer 8 was changed were prepared.

As a connection test method, the measuring electrode 3 shown in FIG.
A current of 1 μA was passed between the measurement electrode 6 and the measurement electrode 42, and the voltage between the measurement electrode 38 and the measurement electrode 40 was measured to calculate the resistance value. Table 1 shows the results.

[0071]

[Table 1]

This resistance value is a resistance value obtained by adding the resistance value of the first transparent electrode 6 itself and the resistance value relating to the contact between the first transparent electrode 6 and the copper layer pattern 10b. First
The resistance value of the sample in which the SiO ₂ layer 8 was not formed was
The resistance value was 15 to 18Ω, and the resistance value did not change even in the sample in which the first SiO ₂ layer 8 was formed to 5 nm. Resistance value of the sample where the film thickness of the first SiO ₂ layer 8 is formed at 10nm is a 18～21Omu, first SiO ₂ layer 8
A slight increase in the resistance value was confirmed as compared with the sample in which no was formed.

The resistance of the sample formed with the first SiO ₂ layer 8 having a thickness of 20 nm is 22 to 27 Ω.
In comparison with the sample in which the SiO ₂ layer 8 was not formed, an increase in resistance of about 50% was confirmed on average. First SiO
The resistance value of the sample formed with the thickness of the _second layer 8 of 30 nm is 25 to 30 Ω, and the average resistance is increased by about 67% as compared with the sample in which the first SiO ₂ layer 8 is not formed. Was done.

As described above, the samples formed with the first SiO ₂ layer 8 having the thicknesses of 5 nm, 10 nm, 20 nm and 30 nm have a higher resistance than the samples not formed with the first SiO ₂ layer 8. Although the value increased, no problem occurred when the liquid crystal was driven, and it was confirmed that the value was within the allowable range. Further, the resistance value of the sample in which the film thickness is further increased and the first SiO ₂ layer 8 is formed with the film thickness of 40 nm varies over 200Ω or cannot be connected. Tested,
It has been difficult to connect the ITO film with low resistance without cracking.

Note that, for the above five samples,
Of the above crimping conditions, when the same connection test was performed by changing the pressure to 15 kgf / cm ² and the crimping area to 1 mm ² , there was a change in the resistance value based on the change in the crimping area.
Otherwise, similar results were obtained. However, the first Si
The thickness of the O ₂ layer 8 is 5 nm, 10 nm, 20 nm and 30 nm.
The variation in resistance value between samples formed in nm was reduced.

As described above, the inventor of the present invention has formed the first SiO ₂ layer 8 on the first connection
By forming the conductive particles 7a in the range of nm, the conductive particles 7a in the ACF 7 penetrate the first SiO ₂ layer 8 and stably electrically connect the first connection electrode portion 12 and the wiring 10 of the circuit substrate. It was confirmed that it was possible to make it possible. (3) Connection test between the third connection electrode portion and the second connection electrode portion using the upper / lower conductive material As described above with reference to FIG. 2, the third transparent electrode 6 a of the signal electrode substrate 17 has the third connection electrode portion. And the second connecting electrode portion 12a of the scanning electrode base material are connected to the upper and lower conductive members 14a.
Are electrically connected. The present inventors have determined that this third
An electrical connection test was performed between the connection electrode portion 12b and the second connection electrode portion 12a.

First, a second connection electrode 12a not connected to the first transparent electrode 6 is formed on the first film 2 by a method similar to the above-described manufacturing method, and the first connection electrode 12a is formed thereon.
SiO ₂ layer 8 having a film thickness of 0 nm, 5 nm, 10 n
m, 20 nm, 30 nm, and 40 nm, to form five scanning electrode substrates. Similarly, a second transparent electrode 6a having a third connection electrode portion 12b is formed on the second film 2a, and a second S electrode is formed thereon.
The iO ₂ layer 8a has a thickness of 0 nm, 5 nm, 10 nm,
Five signal electrode base materials were prepared by dividing the size into 20 nm, 30 nm, and 40 nm.

Next, a method for press-bonding the above-mentioned scanning electrode base material and signal electrode base material via the upper and lower conductive members 14b will be described. As an example of the upper and lower conductive members 14b, a mixture of the following materials was used. (A) Sealing material base material: ESR-2400 (Sumitomo Bakelite Co., Ltd.) 1 g (b) Sealing material curing agent: ESR-2840 (Sumitomo Bakelite Co., Ltd.) 1 g (c) Conductive particles (7.5 μm) ... AUH-607
(Manufactured by Sekisui Fine Chemical Co., Ltd.) 0.04 g (d) Spacer (6.0 μm) ··· Shinshidama (manufactured by Catalyst Kasei Co., Ltd.) 0.09 g The following method was used as an example of the pressure bonding method. First, a vertical conductive material is printed on a predetermined region on any one of the scanning electrode base material and the signal electrode base material, and then formed at 90 ° C.
For 30 to 40 minutes. Next, after the scanning electrode base material and the signal electrode base material are arranged to face each other via the upper and lower conductive members 14b, the signal electrode base material and the transparent electrode side are sandwiched between the outside of the scanning electrode base material and the transparent electrode side by a pressing machine, for example, to a pressure of 1.5 kgf / cm ²
Pressure. Next, it was left for 24 hours in an atmosphere at room temperature in a pressurized state, and subsequently treated at 40 ° C. for 24 hours in the same pressurized state. Next, after the pressurization was released, the treatment was performed at 130 ° C. for 2 hours.

In this way, as shown in FIG.
First and second SiO containing structures _TwoThickness of layers 8 and 8a
Five samples were prepared with different values. And this
The third connection electrode portion 12b of the five samples and the second connection
The state of electrical connection with the electrode part 12a was investigated. First
And the second SiO_TwoSample without layers 8, 8a
In, there was no problem with the electrical connection. Also, the first
And the second SiO_TwoThe layers 8 and 8a have a thickness of 5 nm, 1
Four sumps formed at 0 nm, 20 nm and 30 nm
There was no problem with the electrical connection. But the second
1st and 2nd SiO_TwoThe layers 8 and 8a have a thickness of 40 nm.
In the sample formed in
Not confirmed.

As described above, by forming the first and second SiO ₂ layers 8 and 8a with a thickness in the range of 5 to 30 nm, respectively, the second transparent electrode 6a on the second film 2a is formed. The third connection electrode portion 12b and the second connection electrode portion 12a on the first film 2 are connected to the first and second SiO ₂
It was confirmed that the layers 8 and 8a can be electrically connected via the upper and lower conductive members 14a without removing the layers 8 and 8a by adding a special process.

As described above, the details of the present invention have been described with reference to the embodiments. However, the scope of the present invention is not limited to the examples specifically described in the above embodiments, and the scope of the present invention is not limited to the scope of the present invention. Modifications of the embodiment are included in the scope of the present invention.

[0082]

As described above, according to the present invention,
An inorganic insulating layer is formed over the entirety of the transparent electrode having the first connection electrode portion, and the first connection electrode portion and the external wiring are connected through conductive particles embedded in the inorganic insulating layer. Have been. Thereby, when a plastic film is used as the base material, since the inorganic insulating layer substantially exists also on the connection electrode portion of the transparent electrode, even if the plastic film is distorted under high temperature or high humidity conditions, ,
Cracks can be prevented not only in the transparent electrodes in the display area but also in the connection electrode portions of the transparent electrodes other than the display area.

Further, since no special step of removing the inorganic insulating layer is required, the production yield can be improved, and the increase in product cost can be suppressed.

[Brief description of the drawings]

1A is a cross-sectional view illustrating a liquid crystal display device according to an embodiment of the present invention, FIG. 1B is an enlarged view of a portion A in FIG. 1A, and FIG. It is the side view which looked at the A section of FIG.1 (a) from the side surface.

2A is a cross-sectional view in which a cross section along II and a cross section along II-II in FIG.
FIG. 2B is an enlarged partial cross-sectional view enlarging a portion C in FIG.

FIGS. 3A to 3D are cross-sectional views (part 1) illustrating a method for manufacturing a liquid crystal display device according to an embodiment of the present invention in the order of steps;
The cross-sectional view of FIG. 3C is a cross-sectional view along the line III-III of the right side plan view.

FIGS. 4A and 4B are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to an embodiment of the present invention in the order of steps (part 2).
It is.

FIG. 5 is a schematic plan view showing a connection test method between a connection electrode portion of a transparent electrode and an external wiring.

FIG. 6A is an enlarged plan view of a portion B in FIG. 5, FIG.
FIG. 6B is a sectional view taken along the line IV-IV in FIG.
FIG. 6C is a side view of FIG.

FIG. 7 is an SEM photograph of the crystal size of the ITO film (part 1).

FIG. 8 is an SEM photograph of the crystal size of the ITO film (part 2).

FIG. 9 is an SEM photograph of the crystal size of the ITO film (part 3).

[Explanation of Signs] 2 ... First film (first base material) 2a ... Second film (second base material) 4,4a ... Adhesive layer 5,5a ... Protective layer 6 First transparent electrode 6a, 6b Second transparent electrode 7 Anisotropic conductive layer 7a, 13 Conductive particles 7b Binder layer 8 First SiO ₂ layer (first inorganic insulating layer) 8a: second SiO ₂ layer (second inorganic insulating layer) 10, 10d: wiring of circuit substrate 10a: polyimide layer 10b ... copper layer pattern 11 ... liquid crystal layer 12 ... first connection electrode 12a ... second connection electrode 12b ... third connection electrode 14 ... sealing material 14a ..Vertical conducting material 16, 16a: alignment film 17: signal electrode base material 18: scanning electrode base material 19: liquid crystal display device 2 ... glass substrate 22 ... peeling layer 24 ... roll 30, 32, 34 ... connecting electrodes 36, 38, 40, 42 ... measuring electrode

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Ichiro Betsumiya 4-14-12 Koishikawa, Bunkyo-ku, Tokyo Kyodo Printing Co., Ltd. F-term (reference) 2H090 HA02 HB02 HC19 HD05 HD08 JA05 JA07 JB03 JC00 JD11 JD12 LA01 2H092 GA05 GA35 GA43 GA48 HA23 HA25 MA32 NA11 NA27 PA01 5C094 AA42 AA43 BA43 DA15 EA02 EA05 FB03 FB12 JA08

Claims (15)

[Claims] A first base material having a first transparent electrode extending from a liquid crystal display area to an outside area and having a first connection electrode portion connected to an external wiring; In a liquid crystal display device having a second base material provided with electrodes and a liquid crystal layer sealed between the first base material and the second base material, the liquid crystal display device has the first connection electrode portion A first inorganic insulating layer is formed on the first transparent electrode, and the first connection electrode portion and the external wiring are interposed through conductive particles embedded in the first inorganic insulating layer. A liquid crystal display device, which is electrically connected to the liquid crystal display. 2. A second connection electrode portion connected to the second transparent electrode on the second base material is further formed in a region outside the liquid crystal display region of the first base material. The second connection electrode portion and the external wiring are electrically connected to each other through the conductive particles embedded through the first inorganic insulating layer. 1
3. The liquid crystal display device according to 1. 3. The liquid crystal display device according to claim 1, wherein a second inorganic insulating layer is formed on the second transparent electrode. 4. The conductive particles are formed by pressing conductive particles contained in an anisotropic conductive layer from above the first inorganic insulating layer. The liquid crystal display device according to any one of claims 1 to 3. 5. A third connection electrode from which the second transparent electrode extends is formed in a region outside the liquid crystal display region on the second base material, and the third connection electrode portion is formed. And the second connection electrode on the first base material are electrically connected to each other through a vertically conductive material including conductive particles embedded in the first and second inorganic insulating layers by penetrating the first and second inorganic insulating layers. The liquid crystal display device according to claim 3, wherein: 6. The film thickness of the inorganic insulating layer is 5 nm or more and 3
The liquid crystal display device according to claim 1, wherein the thickness is 0 nm or less. 7. The method according to claim 1, wherein the transparent electrode is crystallized ITO (In).
The liquid crystal display device according to any one of claims 1 to 6, wherein the liquid crystal display device is made of a dium tin oxide (Oxide) film, and a crystal (grain) size of the ITO film is about 0.1 µm or less. 8. The elasticity of the transparent electrode, which is determined based on the indentation depth formed by pressing a predetermined thickness of a predetermined portion of the transparent electrode from the surface using an ultra-micro hardness tester. The liquid crystal display device according to claim 1, wherein the elastic deformation amount is larger than the plastic deformation amount in the deformation amount and the plastic deformation amount. 9. The liquid crystal display device according to claim 1, wherein the inorganic insulating layer comprises a silicon-containing insulating layer or a metal oxide layer. 10. The liquid crystal display device according to claim 1, wherein the substrate is a plastic film or a glass substrate. 11. The transparent electrode and the inorganic insulating layer,
11. The transparent electrode formed by being transferred from a substrate onto the base material, wherein the base material and the transparent electrode are bonded via an adhesive layer. The liquid crystal display device according to claim 1. 12. A sealing material for sealing the liquid crystal layer is formed on the first and second inorganic insulating layers at peripheral portions on the first and second base materials. The liquid crystal display device according to claim 3 or 5, wherein: 13. A transparent electrode having a connection electrode portion formed on the base material and extending from a liquid crystal display area of the base material to an outer region, the connection electrode portion being connected to an external wiring; An electrode substrate of a liquid crystal display device having an inorganic insulating layer formed on an electrode, wherein the connection electrode portion and external wiring penetrate the inorganic insulating layer on the connection electrode portion of the transparent electrode. An electrode substrate for a liquid crystal display device, which is electrically connected via embedded conductive particles. 14. The conductive particle according to claim 13, wherein the conductive particles are formed by pressing conductive particles contained in an anisotropic conductive layer from above the inorganic insulating layer. Substrate for liquid crystal display devices. 15. A transparent electrode having a connection electrode portion extending from a liquid crystal display region on the base material to a region outside the liquid crystal display region on the film, and a transparent electrode having the connection electrode portion formed on the film in order from the bottom. Forming a structure in which an inorganic insulating layer is laminated by transfer, and press-bonding the connection electrode portion and the external wiring via an anisotropic conductive layer to form a conductive layer contained in the anisotropic conductive layer. Electrically connecting the connection electrode portion and the external wiring by penetrating the inorganic insulating layer with particles.