JP2002110592A - 研磨方法および研磨装置 - Google Patents

研磨方法および研磨装置

Info

Publication number
JP2002110592A
JP2002110592A JP2000294974A JP2000294974A JP2002110592A JP 2002110592 A JP2002110592 A JP 2002110592A JP 2000294974 A JP2000294974 A JP 2000294974A JP 2000294974 A JP2000294974 A JP 2000294974A JP 2002110592 A JP2002110592 A JP 2002110592A
Authority
JP
Japan
Prior art keywords
polished
film
polishing
electrolytic solution
polishing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000294974A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002110592A5 (enExample
Inventor
Shuzo Sato
修三 佐藤
Yuji Segawa
雄司 瀬川
Hiroshi Yubi
啓 由尾
Takeshi Nogami
毅 野上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2000294974A priority Critical patent/JP2002110592A/ja
Priority to US09/963,966 priority patent/US6855634B2/en
Publication of JP2002110592A publication Critical patent/JP2002110592A/ja
Priority to US10/697,814 priority patent/US6835292B2/en
Publication of JP2002110592A5 publication Critical patent/JP2002110592A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
JP2000294974A 2000-09-27 2000-09-27 研磨方法および研磨装置 Pending JP2002110592A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000294974A JP2002110592A (ja) 2000-09-27 2000-09-27 研磨方法および研磨装置
US09/963,966 US6855634B2 (en) 2000-09-27 2001-09-26 Polishing method and polishing apparatus
US10/697,814 US6835292B2 (en) 2000-09-27 2003-10-29 Electrochemical thin film polishing method and polishing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000294974A JP2002110592A (ja) 2000-09-27 2000-09-27 研磨方法および研磨装置

Publications (2)

Publication Number Publication Date
JP2002110592A true JP2002110592A (ja) 2002-04-12
JP2002110592A5 JP2002110592A5 (enExample) 2007-02-15

Family

ID=18777478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000294974A Pending JP2002110592A (ja) 2000-09-27 2000-09-27 研磨方法および研磨装置

Country Status (2)

Country Link
US (2) US6855634B2 (enExample)
JP (1) JP2002110592A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004255479A (ja) * 2003-02-24 2004-09-16 Ebara Corp 電解加工方法及び電解加工装置
JP2007123907A (ja) * 2005-10-28 2007-05-17 Applied Materials Inc 電圧モード電流制御
JP2009034802A (ja) * 2007-08-03 2009-02-19 Tokyo Seimitsu Co Ltd 電解加工方法並びに電解加工装置
JP2009522810A (ja) * 2006-01-06 2009-06-11 アプライド マテリアルズ インコーポレイテッド 動的処理制御による電気化学処理
JP2015518273A (ja) * 2012-03-30 2015-06-25 エーシーエム リサーチ （シャンハイ） インコーポレーテッド 半導体ウェハ上のメタル層をストレスフリー研磨するためのノズル

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6299741B1 (en) * 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US6896776B2 (en) * 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7128825B2 (en) 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US7582564B2 (en) * 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US7323416B2 (en) * 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7160432B2 (en) * 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US7232514B2 (en) * 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US20060169597A1 (en) * 2001-03-14 2006-08-03 Applied Materials, Inc. Method and composition for polishing a substrate
US20070295611A1 (en) * 2001-12-21 2007-12-27 Liu Feng Q Method and composition for polishing a substrate
US20040072445A1 (en) * 2002-07-11 2004-04-15 Applied Materials, Inc. Effective method to improve surface finish in electrochemically assisted CMP
US7166207B2 (en) * 2002-11-22 2007-01-23 Taylor Made Golf Company, Inc. Non-mechanical method of removing material from the surface of a golf club head
US7390429B2 (en) * 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
US20040259479A1 (en) * 2003-06-23 2004-12-23 Cabot Microelectronics Corporation Polishing pad for electrochemical-mechanical polishing
KR100572825B1 (ko) * 2003-07-31 2006-04-25 동부일렉트로닉스 주식회사 반도체 소자의 금속배선 형성방법
US20050092620A1 (en) * 2003-10-01 2005-05-05 Applied Materials, Inc. Methods and apparatus for polishing a substrate
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US20060249394A1 (en) * 2005-05-05 2006-11-09 Applied Materials, Inc. Process and composition for electrochemical mechanical polishing
US20060249395A1 (en) * 2005-05-05 2006-11-09 Applied Material, Inc. Process and composition for electrochemical mechanical polishing
ES2286938B1 (es) * 2006-04-26 2008-11-01 Supramol.Lecular Systems S.L. Solucion electrolitica para el pulido electroquimico de articulos de metal.
US20070254485A1 (en) * 2006-04-28 2007-11-01 Daxin Mao Abrasive composition for electrochemical mechanical polishing
JP2008010551A (ja) * 2006-06-28 2008-01-17 Toshiba Corp 半導体装置およびその製造方法
US9803448B2 (en) 2014-09-30 2017-10-31 Hydril Usa Distribution, Llc SIL rated system for blowout preventer control
US10048673B2 (en) 2014-10-17 2018-08-14 Hydril Usa Distribution, Llc High pressure blowout preventer system
US10196871B2 (en) 2014-09-30 2019-02-05 Hydril USA Distribution LLC Sil rated system for blowout preventer control
US10876369B2 (en) 2014-09-30 2020-12-29 Hydril USA Distribution LLC High pressure blowout preventer system
US9989975B2 (en) 2014-11-11 2018-06-05 Hydril Usa Distribution, Llc Flow isolation for blowout preventer hydraulic control systems
US9759018B2 (en) 2014-12-12 2017-09-12 Hydril USA Distribution LLC System and method of alignment for hydraulic coupling
BR112017012157A2 (en) 2014-12-17 2018-01-23 Hydril USA Distribution LLC ? power and communications core, pch system for subsea oil and gas operations and method for decentralizing power and communications on control lines?
US9528340B2 (en) 2014-12-17 2016-12-27 Hydrill USA Distribution LLC Solenoid valve housings for blowout preventer
US9828824B2 (en) * 2015-05-01 2017-11-28 Hydril Usa Distribution, Llc Hydraulic re-configurable and subsea repairable control system for deepwater blow-out preventers

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0883780A (ja) * 1994-07-12 1996-03-26 Toshiba Corp 研磨剤および研磨方法
JPH10270412A (ja) * 1997-03-26 1998-10-09 Internatl Business Mach Corp <Ibm> ワークピースを平坦化する方法および装置
WO2000003426A1 (en) * 1998-07-09 2000-01-20 Acm Research, Inc. Methods and apparatus for electropolishing metal interconnections on semiconductor devices
JP2000183003A (ja) * 1998-10-07 2000-06-30 Toshiba Corp 銅系金属用研磨組成物および半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6096652A (en) * 1997-11-03 2000-08-01 Motorola, Inc. Method of chemical mechanical planarization using copper coordinating ligands
US6402931B1 (en) * 1998-05-18 2002-06-11 Faraday Technology Marketing Group, Llc Electrochemical machining using modulated reverse electric fields
US6066030A (en) * 1999-03-04 2000-05-23 International Business Machines Corporation Electroetch and chemical mechanical polishing equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0883780A (ja) * 1994-07-12 1996-03-26 Toshiba Corp 研磨剤および研磨方法
JPH10270412A (ja) * 1997-03-26 1998-10-09 Internatl Business Mach Corp <Ibm> ワークピースを平坦化する方法および装置
WO2000003426A1 (en) * 1998-07-09 2000-01-20 Acm Research, Inc. Methods and apparatus for electropolishing metal interconnections on semiconductor devices
JP2000183003A (ja) * 1998-10-07 2000-06-30 Toshiba Corp 銅系金属用研磨組成物および半導体装置の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004255479A (ja) * 2003-02-24 2004-09-16 Ebara Corp 電解加工方法及び電解加工装置
JP2007123907A (ja) * 2005-10-28 2007-05-17 Applied Materials Inc 電圧モード電流制御
JP2009522810A (ja) * 2006-01-06 2009-06-11 アプライド マテリアルズ インコーポレイテッド 動的処理制御による電気化学処理
JP2009034802A (ja) * 2007-08-03 2009-02-19 Tokyo Seimitsu Co Ltd 電解加工方法並びに電解加工装置
JP2015518273A (ja) * 2012-03-30 2015-06-25 エーシーエム リサーチ （シャンハイ） インコーポレーテッド 半導体ウェハ上のメタル層をストレスフリー研磨するためのノズル
US9724803B2 (en) 2012-03-30 2017-08-08 Acm Research (Shanghai) Inc. Nozzle for stress-free polishing metal layers on semiconductor wafers

Also Published As

Publication number Publication date
US20020072309A1 (en) 2002-06-13
US6855634B2 (en) 2005-02-15
US6835292B2 (en) 2004-12-28
US20040092110A1 (en) 2004-05-13

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