JP2002093753A - Dicing blade and manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To offer a dicing blade which can prevent deterioration in through-put while restraining generation of the burrs of Al during the dicing process, and to offer a manufacturing method of semiconductor device by using this dicing blade. SOLUTION: This dicing blade 4 is for cutting a scribe line 1 of a wafer 10 to isolate chips 9. The dicing blade 4 is provided with a first blade 4a comprising a wide blade to cut Al patterns 2, 4 which are formed on the scribe line 1, and with a second blade 4b provided for the wide blade of the first blade and comprising a thin blade to cut the scribe line 1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dicing blade and a method for manufacturing a semiconductor device using the same.

[0002]

2. Description of the Related Art FIG. 2 is a plan view showing a part of a semiconductor wafer for explaining a conventional method for manufacturing a semiconductor device. FIGS. 3 (a) and 3 (b) show that a TCP
It is sectional drawing which shows a mode that the mounting process of (tape carrier package) is given.

First, as shown in FIG. 2, a semiconductor wafer 100 on which semiconductor elements and the like are formed is prepared. The wafer 100 has a chip forming region 109 where a semiconductor chip is formed and a scribe line 101. The chip formation region 109 is separated by the scribe line 101. On the scribe line 101, an Al wiring material, a plurality of Al patterns 102, 103, and the like are formed. The Al wiring material is also formed on the scribe line 101 when the Al wiring pattern is formed in the chip formation region. The Al pattern is formed, for example, on a TEG (Test Elementary Grou) formed on a wafer.
A pad for contacting a measuring needle when performing an electrical test as in p).

Next, a dicing process is performed on the wafer. That is, the wafer 100 is cut along the scribe line 101 using a rotated dicing blade (blade). Hereinafter, specific steps will be described.

[0005] As shown in FIG.
The first dicing blade wider than 02 and 103 is aligned with the scribe line 101. Next, the scribe line 101 is half-diced using a first dicing blade. The cut width 105 at this time is wider than the width of the Al patterns 102 and 103. Half dicing means that the Al pattern is cut to a small depth so that the Al pattern can be removed, and the scribe line is not cut.

Thereafter, a second dicing blade having a width smaller than that of the Al patterns 102 and 103 is applied to the scribe line 1.
Align to 01. Next, the wafer is cut at the scribe line by dicing the scribe line 101 using a second dicing blade. The cut width 107 at this time is smaller than the width of the Al patterns 102 and 103. Thus, the semiconductor chip (IC chip) 109 is separated from the wafer 100.

According to the above dicing step, the Al patterns 102 and 103 on the scribe line are cut off by performing half dicing with the first dicing blade.
It is possible to prevent generation of burrs of Al on the chip side when 0 is cut. In other words, if dicing is performed on the wafer using only the second dicing blade without performing half dicing, the cut width 107 becomes smaller than the Al pattern 102,
Since the width is smaller than the width of 103, the Al patterns 102 and 103 are not completely cut during the dicing process.
A part of the 1 pattern remains, and as a result, burrs of Al occur on the chip side. However, by performing half dicing, the generation of burrs of Al can be prevented. Note that the Al burr is that which remains in a state where the Al pieces stand up near the outer periphery of the semiconductor chip 22 (chip side).

After that, the separated IC chip 109 is subjected to a TCP mounting process. That is, as shown in FIG. 3A, first, TAB (Tape Automated Bonding)
Prepare the tape. The TAB tape has a flexible tape 111, and bonding leads (fingers) 112 are connected to the flexible tape 111 by an adhesive (not shown). The bonding lead 112 has an inner lead at the tip.

Next, as shown in FIG. 3B, the inner leads are positioned on the pads 113 of the IC chip 109, and the inner leads and the pads 113 are heated and pressed to be pressed. Thus, the TCP mounting is performed.

In the above-mentioned TCP mounting, since the chip 109 in which Al burrs are prevented is used, chip defects due to Al burrs can be prevented. The burring of Al is not particularly problematic in ordinary wire bonding. However, TCP mounting and CSP (Chip Size) as shown in FIG.
d Package) and so on. That is, due to recent miniaturization of the package, the distance between the IC chip 109 and the inner lead (finger 112) connecting it is only about several tens of μm. 112
May cause a short circuit between the substrate and the finger or a short circuit between the fingers, resulting in a large quality problem and a failure of the IC chip. But,
In the method of manufacturing a semiconductor device described above, it is possible to prevent the occurrence of a chip failure due to Al burrs.

[0011]

As described above, in the above-mentioned conventional method for manufacturing a semiconductor device, since half dicing is performed by the second dicing blade, it is possible to prevent the occurrence of burrs of Al. As a result, It is possible to prevent chip defects due to Al burrs.

However, since it is necessary to perform dicing twice using the first dicing blade and the second dicing blade, the throughput of the dicing step is deteriorated. That is, since the dicing is performed by performing positioning with the first dicing blade and the blade is replaced with the second dicing blade and performing the dicing, the dicing is performed twice as much as the dicing performed by one dicing blade. It takes time.

The present invention has been made in view of the above circumstances, and an object of the present invention is to use a dicing blade and a dicing blade capable of preventing the occurrence of burrs of Al in a dicing step and preventing a decrease in throughput. An object of the present invention is to provide a method for manufacturing a semiconductor device.

[0014]

In order to solve the above-mentioned problems, a dicing blade according to the present invention is a dicing blade for cutting a scribe line of a wafer and separating the dice into chips, and is formed on the scribe line. A first blade portion having a wide blade for scraping the metal pattern, and a second blade portion provided on the wide blade of the first blade portion and having a narrow blade for cutting a scribe line; , Is provided.
Note that the metal pattern may be an Al pattern.

According to the above-mentioned dicing blade, the first blade portion having a wide blade for cutting the metal pattern on the scribe line and the second blade portion having the narrow blade for cutting the scribe line are provided. The dicing blade is used. For this reason, in the dicing step, the metal pattern on the scribe line is
The wafer can be cut by the blade of the second blade portion while being scraped off by the blade of the blade portion. Therefore, it is possible to suppress the occurrence of metal flash on the chip side, and it is possible to cut the wafer by one dicing with one dicing blade, so that it is possible to prevent a decrease in throughput.

In the dicing blade according to the present invention, it is preferable that the blade of the first blade has a width wider than the metal pattern, and the blade of the second blade has a width narrower than the metal pattern. .

A method for manufacturing a semiconductor device according to the present invention is a method for manufacturing a semiconductor device comprising a dicing step of separating a plurality of semiconductor chips by cutting a semiconductor wafer along a scribe line using a dicing blade. The dicing blade is provided on a first blade portion having a wide blade for scraping a metal pattern formed on a scribe line; and a first blade portion having a wide blade for cutting the scribe line. And a second blade portion having a narrow blade.

In the method of manufacturing a semiconductor device according to the present invention, the cut width of the first blade portion by the blade is wider than the metal pattern, and the cut width of the second blade portion by the blade is the metal. It is preferable to have a width smaller than the pattern.

In the method of manufacturing a semiconductor device according to the present invention, in the dicing step, the scribe line is cut by the narrow blade of the second blade while the metal pattern is scraped by the wide blade of the first blade. It is preferable that

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1A illustrates a method of manufacturing a semiconductor device according to an embodiment of the present invention, and is a plan view illustrating a part of a semiconductor wafer. FIG.
FIG. 2B is a cross-sectional view illustrating a state in which a dicing process is performed on the semiconductor wafer illustrated in FIG.

First, as shown in FIG. 1A, a semiconductor wafer 10 on which semiconductor elements and the like are formed is prepared. The wafer 10 has a chip forming region 9 where semiconductor chips are formed and a scribe line 1. The chip forming region 9 is separated by the scribe line 1, and a plurality of Al patterns 2, 3 and the like are formed in the scribe line 1. The Al patterns 2 and 3 are, for example, pads for contacting a measuring needle when performing an electrical test on a TEG or the like formed on the wafer.

Next, as shown in FIG. 1B, a dicing process is performed on the wafer. That is, first, the dicing blade (blade) 4 is aligned with the scribe line 1 and the wafer 10 is rotated by using the rotated dicing blade 4.
Is cut along the scribe line 1.

The dicing blade 4 has a disk shape and includes a first blade portion 4a and a second blade portion 4b. The first blade portion 4a has a blade having a wide width 5 for shaving the Al pattern on the scribe line 1, and this blade is formed wider than the width 6 of the Al patterns 2 and 3. The second blade portion 4b has a blade with a narrow width 7 for completely cutting the scribe line,
This blade is formed thinner than the width 6 of the Al patterns 2 and 3.

The second blade section 4b is connected to the first blade section 4a.
When the wafer 10 is cut using the dicing blade 4, the Al patterns 2 and 3 on the scribe line 1 are cut off by the blade of the first blade 4a while the blade of the second blade 4b is cut off. In this way, the wafer can be cut and separated into chips 9.

After that, the separated IC chip 9 is
Is carried out. That is, first, a TAB tape is prepared. This TAB tape is the same as that shown in FIG. Thereafter, the inner leads (fingers) are positioned on the pads of the IC chip, and the inner leads and the pads are heated and pressed to be pressed. Thus, the TCP mounting is performed.

According to the above-described embodiment, the first blade portion 4a having the wide blade 5 for cutting the Al pattern on the scribe line 1 and the narrow blade 7 for completely cutting the scribe line are provided. The dicing blade 4 including the second blade portion 4b is used. For this reason,
In the dicing process, the Al on the scribe line surface
The wafers can be cut by the blades of the second blade portion 4b while shaving off the patterns 2 and 3 by the blades of the first blade portion 4a. Therefore, generation of Al burrs on the chip side can be suppressed, and the wafer can be cut by one dicing with one dicing blade 4 without changing the blade. Throughput can be improved.

The present invention is not limited to the above embodiment, but can be implemented with various modifications. For example,
The shape and size of each of the first blade portion 4a and the second blade portion 4b of the dicing blade can be appropriately changed to appropriate shapes and sizes depending on the wafer to be diced.

In the above embodiment, the Al patterns 2 and 3 are formed on the scribe line 1. However, the present invention is not limited to Al, and the scribe line 1 may be formed of a metal made of another metal (for example, Cu). It is also possible to form a pattern.

[0029]

As described above, according to the present invention, the first blade portion having the wide blade for scraping the Al pattern formed on the scribe line and the narrow blade for cutting the scribe line are provided. And a second blade portion having the above-mentioned blade. Therefore, in the dicing process, Al
It is possible to provide a dicing blade capable of preventing deterioration of throughput while suppressing occurrence of burrs and a method of manufacturing a semiconductor device using the same.

[Brief description of the drawings]

FIG. 1A is a plan view illustrating a part of a semiconductor wafer for explaining a method of manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. It is sectional drawing which shows a mode that the dicing process is given to the shown semiconductor wafer.

FIG. 2 is a plan view illustrating a part of a semiconductor wafer for explaining a conventional method for manufacturing a semiconductor device.

FIGS. 3A and 3B are cross-sectional views showing a state in which a semiconductor chip is subjected to a TCP mounting step.

[Explanation of symbols]

 1,101 scribe line 2,3,102,103 Al pattern 4 Dicing blade 4a First blade part 4b Second blade part 5 Blade width of first blade part 6 Width of Al pattern 7 Width of blade of second blade part 9, 109 Chip formation area (IC chip) 10, 100 Semiconductor wafer 105, 107 Cut width 111 Flexible tape 112 Bonding lead (finger) 113 Pad

Claims (5)

[Claims] 1. A dicing blade for cutting a scribe line of a wafer to separate each chip, the first blade having a wide blade for scraping a metal pattern formed on the scribe line; A dicing blade provided on a wide blade of the first blade portion and having a narrow blade for cutting a scribe line. 2. The dicing device according to claim 1, wherein the blade of the first blade has a width wider than the metal pattern, and the blade of the second blade has a width smaller than the metal pattern. blade. 3. A method of manufacturing a semiconductor device comprising a dicing step of separating a plurality of semiconductor chips by cutting a semiconductor wafer at a scribe line using a dicing blade, wherein the dicing blade is provided on a scribe line. First blade portion having a wide blade for scraping a metal pattern formed on the first blade portion, and a second blade provided on the wide blade of the first blade portion and having a narrow blade for cutting a scribe line And a method of manufacturing a semiconductor device. 4. The cutting width of the first blade portion with the blade is wider than the metal pattern, and the cutting width of the second blade portion with the blade is narrower than the metal pattern. A method for manufacturing a semiconductor device according to claim 3. 5. The dicing step according to claim 1, wherein the scribe line is cut by the narrow blade of the second blade while the metal pattern is scraped by the wide blade of the first blade. 5. The method for manufacturing a semiconductor device according to 3 or 4.