JP2002080240A - Low dielectric constant alkali-free glass - Google Patents

Low dielectric constant alkali-free glass

Info

Publication number
JP2002080240A
JP2002080240A JP2000273780A JP2000273780A JP2002080240A JP 2002080240 A JP2002080240 A JP 2002080240A JP 2000273780 A JP2000273780 A JP 2000273780A JP 2000273780 A JP2000273780 A JP 2000273780A JP 2002080240 A JP2002080240 A JP 2002080240A
Authority
JP
Japan
Prior art keywords
dielectric constant
glass
low dielectric
free glass
alkali
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000273780A
Other languages
Japanese (ja)
Inventor
Yasuko Douya
康子 堂谷
Hiroshi Usui
寛 臼井
Hitoshi Onoda
仁 小野田
Sukeyoshi Negishi
祐美 根岸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP2000273780A priority Critical patent/JP2002080240A/en
Publication of JP2002080240A publication Critical patent/JP2002080240A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10Frit compositions, i.e. in a powdered or comminuted form containing lead
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/076Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/102Glass compositions containing silica with 40% to 90% silica, by weight containing lead
    • C03C3/108Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing boron

Abstract

PROBLEM TO BE SOLVED: To provide a low dielectric constant alkali-free glass enabling simultaneous firing with a silver electrode and keeping insulation level of an electronic circuit substrate which can be directed to a green sheet for an electronic circuit substrate. SOLUTION: This low dielectric constant alkali-free glass substantially comprises in mol% 60-80 of SiO2, 12 to 25 of B2O3, 0.5 to 8 of PbO, 0 to 9 of Al2O3 and 0 to 7 of MgO+CaO+ZnO.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電子回路基板用グ
リーンシートに好適な低誘電率無アルカリガラスに関す
る。
The present invention relates to a low dielectric constant alkali-free glass suitable for a green sheet for an electronic circuit board.

【0002】[0002]

【従来の技術】従来より、電子回路基板として、アルミ
ナ粉末を焼結して作製されるアルミナ基板が広く使用さ
れている。しかし、アルミナ粉末の焼結温度が約160
0℃と高いために、アルミナ基板作製と同時に焼成する
電極の材料としてはタングステン(融点:3400
℃)、モリブデン(融点:2620℃)等の高融点金属
しか使用できなかった。すなわち、アルミナ基板には、
これら高融点金属よりも比抵抗の小さい銀(融点:96
2℃)等の金属を基板作製と同時に焼成する電極材料と
して使用できない問題があった。
2. Description of the Related Art Alumina substrates made by sintering alumina powder have been widely used as electronic circuit substrates. However, the sintering temperature of alumina powder is about 160
Since the temperature is as high as 0 ° C., tungsten (melting point: 3400
° C) and molybdenum (melting point: 2620 ° C). That is, on the alumina substrate,
Silver having a lower specific resistance than these refractory metals (melting point: 96
(2 ° C.) cannot be used as an electrode material to be fired simultaneously with the production of the substrate.

【0003】この問題を解決するために、誘電率および
誘電損失のいずれもが低いアルカリホウケイ酸ガラスの
粉末をグリーンシート化し、これを焼成して電子回路基
板とする方法が開発されている。該方法における焼成温
度は典型的には900℃以下であり、基板作製と同時に
焼成する電極の材料としてたとえば銀を使用できる。
In order to solve this problem, a method has been developed in which an alkali borosilicate glass powder having a low dielectric constant and a low dielectric loss is formed into a green sheet, which is fired to obtain an electronic circuit board. The firing temperature in this method is typically 900 ° C. or lower, and for example, silver can be used as a material for an electrode which is fired simultaneously with the production of the substrate.

【0004】[0004]

【発明が解決しようとする課題】前記グリーンシートに
使用されている従来のアルカリホウケイ酸ガラスには次
のような問題があった。すなわち、アルカリホウケイ酸
ガラスを使用したグリーンシートを焼成して作製された
電子回路基板には、銀電極との同時焼成によって銀が該
電子回路基板に拡散し、電子回路基板の絶縁性を低下さ
せる問題があった。本発明は、以上の課題を解決する低
誘電率無アルカリガラスの提供を目的とする。
The conventional alkali borosilicate glass used for the green sheet has the following problems. That is, in an electronic circuit board manufactured by firing a green sheet using alkali borosilicate glass, silver is diffused into the electronic circuit board by simultaneous firing with a silver electrode, thereby lowering the insulating property of the electronic circuit board. There was a problem. An object of the present invention is to provide a low dielectric constant alkali-free glass that solves the above-mentioned problems.

【0005】[0005]

【課題を解決するための手段】本発明は、下記酸化物基
準のモル%表示で、 SiO2 60〜80%、 B23 12〜25%、 PbO 0.5〜8%、 Al23 0〜9%、 MgO+CaO+ZnO 0〜7%、 から実質的になる低誘電率無アルカリガラスを提供す
る。
SUMMARY OF THE INVENTION The present invention, in mol% based on the following oxides, SiO 2 60~80%, B 2 O 3 12~25%, PbO 0.5~8%, Al 2 O A low dielectric constant alkali-free glass consisting essentially of 30 to 9%, MgO + CaO + ZnO 0 to 7%.

【0006】[0006]

【発明の実施の形態】本発明の低誘電率無アルカリガラ
ス(以下単に本発明のガラスという。)は通常、粉末化
してガラス粉末とされる。このガラス粉末を電子回路基
板作製に用いる場合、通常、グリーンシート化して使用
される。すなわち、該ガラス粉末は樹脂と混合される。
該混合に際しては必要に応じて、セラミックスフィラー
等の無機粉末、可塑剤等が添加される。次に、溶剤等を
添加してスラリーとし、ポリエチレンテレフタレート等
のフィルム上にドクターブレード法等によってこのスラ
リーをシート状に成形する。最後に乾燥して溶剤等を除
去しグリーンシートとされる。
BEST MODE FOR CARRYING OUT THE INVENTION The low dielectric constant alkali-free glass of the present invention (hereinafter simply referred to as the glass of the present invention) is usually powdered into glass powder. When this glass powder is used for producing an electronic circuit board, it is usually used as a green sheet. That is, the glass powder is mixed with the resin.
At the time of the mixing, an inorganic powder such as a ceramic filler, a plasticizer and the like are added as necessary. Next, a slurry is formed by adding a solvent or the like, and the slurry is formed into a sheet shape on a film such as polyethylene terephthalate by a doctor blade method or the like. Finally, it is dried to remove the solvent and the like to obtain a green sheet.

【0007】前記樹脂として、ポリビニルブチラール、
アクリル樹脂等が、前記セラミックスフィラーとして、
α−石英、非晶質シリカ、アルミナ、マグネシア、フォ
ルステライト、コージエライト、ムライト、ジルコン、
ジルコニア等の粉末が、前記可塑剤として、フタル酸ジ
ブチル、フタル酸ジオクチル、フタル酸ブチルベンジル
等が、それぞれ例示される。
As the resin, polyvinyl butyral,
Acrylic resin, etc., as the ceramic filler,
α-quartz, amorphous silica, alumina, magnesia, forsterite, cordierite, mullite, zircon,
Examples of the plasticizer include powders of zirconia and the like, and examples of the plasticizer include dibutyl phthalate, dioctyl phthalate, and butylbenzyl phthalate.

【0008】本発明のガラスの焼成可能な温度TBは9
50℃以下であることが好ましい。950℃超では銀電
極との同時焼成が困難になる。より好ましくは900℃
以下である。ここでいう「焼成可能」とは次のようなも
のである。すなわち、平均粒径が1〜5μmの範囲にあ
るガラス粉末20gを直径12.7mmの円柱状に加圧
成形し、これを温度Tまで加熱し30分間保持する焼成
を行った後冷却し、得られた焼成体を赤色浸透液(赤色
インク)に浸漬後取り出して水洗し、該焼成体に着色が
認められない場合を「焼成可能」という。前記Tが95
0℃のとき焼成可能であればTBは950℃以下であ
る。
The firing temperature T B of the glass of the present invention is 9
It is preferably 50 ° C. or lower. If the temperature exceeds 950 ° C., simultaneous firing with a silver electrode becomes difficult. More preferably 900 ° C
It is as follows. The term “sinterable” as used herein is as follows. That is, 20 g of glass powder having an average particle size in the range of 1 to 5 μm is pressure-formed into a columnar shape having a diameter of 12.7 mm, and the resultant is heated to a temperature T, baked for 30 minutes, cooled, and then cooled. The fired body thus obtained is immersed in a red penetrant (red ink), taken out and washed with water, and the case where no coloration is observed in the fired body is referred to as “bakable”. T is 95
0 ℃ firing if T B when it is 950 ° C. or less.

【0009】本発明のガラスの20℃での1MHzにお
ける誘電率εは5.4以下であることが好ましい。5.
4超では電子回路基板用グリーンシートへの適用が困難
になるおそれがある。より好ましくは4.9以下、特に
好ましくは4.4以下である。
The dielectric constant ε at 1 MHz at 20 ° C. of the glass of the present invention is preferably 5.4 or less. 5.
If it exceeds 4, application to a green sheet for an electronic circuit board may be difficult. It is more preferably at most 4.9, particularly preferably at most 4.4.

【0010】本発明のガラスの20℃での1MHzにお
ける誘電損失tanδは0.0010以下であることが
好ましい。0.001超では電子回路基板用グリーンシ
ートへの適用が困難になるおそれがある。より好ましく
は0.0008以下、特に好ましくは0.0006以下
である。
The dielectric loss tan δ at 1 MHz at 20 ° C. of the glass of the present invention is preferably 0.0010 or less. If it exceeds 0.001, application to a green sheet for an electronic circuit board may be difficult. It is more preferably 0.0008 or less, particularly preferably 0.0006 or less.

【0011】次に、本発明のガラスの組成について、モ
ル%を単に%と記して以下に説明する。SiO2はネッ
トワークフォーマであり、またεを低下させる成分であ
り、必須である。60%未満では化学的耐久性が低下す
る、またはεが高くなる。好ましくは65%以上であ
る。80%超ではガラス溶融温度が高くなりすぎる、ま
たは、軟化点が高くなりすぎてTBが950℃超となる
おそれがある。好ましくは77%以下である。
Next, the composition of the glass of the present invention will be described below by simply writing mol% as%. SiO 2 is a network former and a component that lowers ε, and is essential. If it is less than 60%, the chemical durability decreases or ε increases. Preferably it is at least 65%. The 80% glass melting temperature becomes too high, or, T B becomes too high softening point may become 950 ° C. greater. Preferably it is 77% or less.

【0012】B23はネットワークフォーマであり、必
須である。12%未満ではガラス溶融温度が高くなりす
ぎ、ガラス化が困難になる。好ましくは16%以上であ
る。25%超では化学的耐久性が低下する。好ましくは
23%以下である。
B 2 O 3 is a network former and is essential. If it is less than 12%, the glass melting temperature becomes too high and vitrification becomes difficult. Preferably it is 16% or more. If it exceeds 25%, the chemical durability decreases. Preferably it is 23% or less.

【0013】PbOはTBを下げる成分、またはtan
δを低下させる成分であり、必須である。0.5%未満
ではTBが高くなる。好ましくは2%以上である。8%
超ではεが高くなる。好ましくは7%以下、好ましくは
6%以下である。
[0013] PbO component lowering the T B or tan,
It is a component that reduces δ and is essential. Is T B becomes high with less than 0.5%. It is preferably at least 2%. 8%
Above that, ε increases. It is preferably at most 7%, preferably at most 6%.

【0014】Al23は必須ではないが、ガラスを安定
化し、または分相を抑制するために9%まで含有しても
よい。9%超ではガラス溶融温度が高くなりすぎるおそ
れがある、またはεが高くなりすぎるおそれがある。
Al 2 O 3 is not essential, but may be contained up to 9% in order to stabilize the glass or suppress phase separation. If it exceeds 9%, the glass melting temperature may be too high, or ε may be too high.

【0015】MgO、CaOおよびZnOはいずれも必
須ではないが、ガラス溶融温度を低下させるためにこれ
ら3成分の含有量の合計が7%までの範囲で含有しても
よい。7%超ではガラスが失透するおそれがある。好ま
しくは6%以下である。
Although MgO, CaO and ZnO are not essential, they may be contained in a total content of these three components up to 7% in order to lower the glass melting temperature. If it exceeds 7%, the glass may be devitrified. It is preferably at most 6%.

【0016】本発明のガラスは実質的に上記成分からな
るが、他の成分を本発明の目的を損なわない範囲で含有
してもよい。該「他の成分」の含有量の合計は、好まし
くは7%以下である。7%超ではガラスが失透するおそ
れがある。より好ましくは5%以下である。
The glass of the present invention consists essentially of the above-mentioned components, but may contain other components as long as the object of the present invention is not impaired. The total content of the "other components" is preferably 7% or less. If it exceeds 7%, the glass may be devitrified. It is more preferably at most 5%.

【0017】前記「他の成分」として次のようなものが
例示される。すなわち、ガラス溶融温度を低下させるた
めに、またはTBを低下させるためにTiO2、Zr
2、SrO、BaO、Bi23、P25を含有しても
よい。また、ガラスを着色するために、Fe23、Mn
O、CuO、CoO、V25、Cr23等着色成分を含
有してもよい。
The following are examples of the "other components". That is, in order to lower the glass melting temperature or to lower T B , TiO 2 , Zr
O 2 , SrO, BaO, Bi 2 O 3 , and P 2 O 5 may be contained. Further, in order to color the glass, Fe 2 O 3 , Mn
Coloring components such as O, CuO, CoO, V 2 O 5 and Cr 2 O 3 may be contained.

【0018】本発明のガラスはLi2O、Na2O、K2
O等のアルカリ金属酸化物を実質的に含有せず、これら
アルカリ金属酸化物の含有量の合計は典型的には0.5
%以下である。
The glass of the present invention is made of Li 2 O, Na 2 O, K 2
It does not substantially contain an alkali metal oxide such as O, and the total content of these alkali metal oxides is typically 0.5
% Or less.

【0019】[0019]

【実施例】表のSiO2〜K2Oの欄にモル%表示で示し
た組成となるように原料を調合、混合し、該混合された
原料を白金ルツボに入れて1650℃で120分間溶融
後、溶融ガラスを流し出した。得られたガラスの一部を
アルミナ製ボールミルで10時間粉砕してガラス粉末と
した。残りのガラスは塊の状態でガラス転移点Tg付近
の温度で徐冷した。例1〜5は実施例、例6は比較例で
ある。
EXAMPLES The raw materials were prepared and mixed so as to have the composition indicated by mol% in the column of SiO 2 to K 2 O in the table, and the mixed raw materials were put in a platinum crucible and melted at 1650 ° C. for 120 minutes. Thereafter, the molten glass was poured out. A part of the obtained glass was pulverized with an alumina ball mill for 10 hours to obtain glass powder. The remaining glass was gradually cooled in a lump state at a temperature near the glass transition point T g . Examples 1 to 5 are working examples, and example 6 is a comparative example.

【0020】例1〜6のガラスについて、Tg(単位:
℃)、焼成状況、ε、tanδを測定または評価した。
結果を表に示す。 Tg:ガラス粉末を試料として示差熱分析により昇温速
度10℃/分で室温から1000℃までの範囲で測定し
た。なお、アルミナ粉末を標準物質とした。
For the glasses of Examples 1 to 6, T g (unit:
° C), the firing state, ε, tan δ were measured or evaluated.
The results are shown in the table. T g : Measured from room temperature to 1000 ° C. at a heating rate of 10 ° C./min by differential thermal analysis using glass powder as a sample. Alumina powder was used as a standard substance.

【0021】焼成状況:ガラス粉末2gを直径12.7
mmの円柱状に加圧成形したものを試料とした。この試
料を900℃または950℃に30分間保持して得た焼
成体を赤色浸透液(マーテック社製、スーパーチェック
UP−G3)に浸漬して取り出し水洗した。900℃の
焼成体に着色が認められなかったもの(TB≦900
℃)を○、900℃の焼成体には着色が認められたが9
50℃の焼成体には着色が認められなかったもの(90
0℃<TB≦950℃)を△、950℃の焼成体に着色
が認められたもの(950℃<TB)を×とした。
Firing state: 2 g of glass powder was 12.7 in diameter.
The sample was pressure-molded into a column of mm. The fired body obtained by holding the sample at 900 ° C. or 950 ° C. for 30 minutes was immersed in a red penetrant (Supertech UP-G3, manufactured by Martec), taken out, and washed with water. No color was observed in the fired body at 900 ° C (T B ≤900
° C), and coloration was observed in the fired body at 900 ° C.
No color was observed in the fired body at 50 ° C. (90
0 ° C <T B ≦ 950 ° C.) was evaluated as Δ, and a fired body at 950 ° C. that was colored (950 ° C. <T B ) was evaluated as x.

【0022】ε、tanδ:ガラス粉末40gを60m
m×60mmの金型に入れて加圧成形したものを、90
0℃で30分間焼成した。得られた焼成体を50mm×
50mm×3mmに加工し、LCRメーターを使用し
て、20℃で1MHzにおける誘電率と誘電損失を測定
した。
Ε, tan δ: 60 g of 40 g of glass powder
Pressed into a m × 60 mm mold,
It was baked at 0 ° C. for 30 minutes. The obtained fired body is 50 mm ×
It was processed to 50 mm × 3 mm, and the dielectric constant and the dielectric loss at 1 MHz at 20 ° C. were measured using an LCR meter.

【0023】[0023]

【表1】 [Table 1]

【0024】[0024]

【発明の効果】本発明のガラスを電子回路基板用グリー
ンシートに用いることにより、銅(融点:1083
℃)、銀等からなる電極を同時に焼成できるとともに、
該グリーンシートを用いて作製された電子回路基板の絶
縁性を高くできる。
By using the glass of the present invention for a green sheet for an electronic circuit board, copper (melting point: 1083) can be obtained.
℃), electrodes made of silver etc. can be fired simultaneously,
The insulating property of an electronic circuit board manufactured using the green sheet can be increased.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 根岸 祐美 神奈川県横浜市神奈川区羽沢町1150番地 旭硝子株式会社内 Fターム(参考) 4G062 AA10 AA18 BB05 CC10 DA06 DA07 DB01 DB02 DB03 DC04 DD01 DE01 DE02 DE03 DF02 DF03 EA01 EA10 EB01 EC01 ED01 ED02 ED03 EE01 EE02 EE03 EF01 EG01 FA01 FA10 FB01 FC01 FD01 FE01 FF01 FG01 FH01 FJ01 FK01 FL01 GA01 GA10 GB01 GC01 GD01 GE01 HH01 HH03 HH05 HH07 HH09 HH11 HH13 HH15 HH17 HH20 JJ01 JJ03 JJ05 JJ07 JJ10 KK01 KK03 KK05 KK07 KK10 MM27  ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Yumi Negishi 1150 Hazawa-cho, Kanagawa-ku, Yokohama-shi, Kanagawa Prefecture F-term (reference) 4G062 AA10 AA18 BB05 CC10 DA06 DA07 DB01 DB02 DB03 DC04 DD01 DE01 DE02 DE03 DF02 DF03 EA01 EA10 EB01 EC01 ED01 ED02 ED03 EE01 EE02 EE03 EF01 EG01 FA01 FA10 FB01 FC01 FD01 FE01 FF01 FG01 FH01 FJ01 FK01 FL01 GA01 GA10 GB01 GC01 GD01 GE01 HH01 HH03 HH05 HH07 H01 KK01 GD01 GE01 MM27

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】下記酸化物基準のモル%表示で、 SiO2 60〜80%、 B23 12〜25%、 PbO 0.5〜8%、 Al23 0〜9%、 MgO+CaO+ZnO 0〜7%、 から実質的になる低誘電率無アルカリガラス。In 1. A following oxides represented by mol%, SiO 2 60~80%, B 2 O 3 12~25%, PbO 0.5~8%, Al 2 O 3 0~9%, MgO + CaO + ZnO 0 ~ 7%, a low dielectric constant alkali-free glass consisting essentially of 【請求項2】20℃での1MHzにおける誘電率が5.
4以下である請求項1に記載の低誘電率無アルカリガラ
ス。
2. The dielectric constant at 1 MHz at 20.degree.
The low dielectric constant alkali-free glass according to claim 1, which is 4 or less.
【請求項3】20℃での1MHzにおける誘電損失が
0.0010以下である請求項1または2に記載の低誘
電率無アルカリガラス。
3. The low dielectric constant alkali-free glass according to claim 1, wherein the dielectric loss at 1 MHz at 20 ° C. is 0.0010 or less.
JP2000273780A 2000-09-08 2000-09-08 Low dielectric constant alkali-free glass Pending JP2002080240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000273780A JP2002080240A (en) 2000-09-08 2000-09-08 Low dielectric constant alkali-free glass

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Cited By (5)

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US7829490B2 (en) 2006-12-14 2010-11-09 Ppg Industries Ohio, Inc. Low dielectric glass and fiber glass for electronic applications
US8697591B2 (en) 2006-12-14 2014-04-15 Ppg Industries Ohio, Inc. Low dielectric glass and fiber glass
US9056786B2 (en) 2006-12-14 2015-06-16 Ppg Industries Ohio, Inc. Low density and high strength fiber glass for ballistic applications
US9156728B2 (en) 2006-12-14 2015-10-13 Ppg Industries Ohio, Inc. Low density and high strength fiber glass for ballistic applications
US9394196B2 (en) 2006-12-14 2016-07-19 Ppg Industries Ohio, Inc. Low density and high strength fiber glass for reinforcement applications

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829490B2 (en) 2006-12-14 2010-11-09 Ppg Industries Ohio, Inc. Low dielectric glass and fiber glass for electronic applications
US8697591B2 (en) 2006-12-14 2014-04-15 Ppg Industries Ohio, Inc. Low dielectric glass and fiber glass
US8697590B2 (en) 2006-12-14 2014-04-15 Ppg Industries Ohio, Inc. Low dielectric glass and fiber glass for electronic applications
US9056786B2 (en) 2006-12-14 2015-06-16 Ppg Industries Ohio, Inc. Low density and high strength fiber glass for ballistic applications
US9096462B2 (en) 2006-12-14 2015-08-04 Ppg Industries Ohio, Inc. Low dielectric glass and fiber glass
US9156728B2 (en) 2006-12-14 2015-10-13 Ppg Industries Ohio, Inc. Low density and high strength fiber glass for ballistic applications
US9394196B2 (en) 2006-12-14 2016-07-19 Ppg Industries Ohio, Inc. Low density and high strength fiber glass for reinforcement applications
US10647610B2 (en) 2006-12-14 2020-05-12 Ppg Industries Ohio, Inc. Low density and high strength fiber glass for reinforcement applications

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