JP2002338295A - Alkali-free glass, composition for electronic circuit board and electronic circuit board - Google Patents

Alkali-free glass, composition for electronic circuit board and electronic circuit board

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Publication number
JP2002338295A
JP2002338295A JP2001147679A JP2001147679A JP2002338295A JP 2002338295 A JP2002338295 A JP 2002338295A JP 2001147679 A JP2001147679 A JP 2001147679A JP 2001147679 A JP2001147679 A JP 2001147679A JP 2002338295 A JP2002338295 A JP 2002338295A
Authority
JP
Japan
Prior art keywords
circuit board
electronic circuit
composition
alkali
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001147679A
Other languages
Japanese (ja)
Inventor
Jiro Chiba
Yasuko Douya
Hitoshi Onoda
Hiroshi Usui
次郎 千葉
康子 堂谷
仁 小野田
寛 臼井
Original Assignee
Asahi Glass Co Ltd
旭硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, 旭硝子株式会社 filed Critical Asahi Glass Co Ltd
Priority to JP2001147679A priority Critical patent/JP2002338295A/en
Publication of JP2002338295A publication Critical patent/JP2002338295A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/076Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/062Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064Glass compositions containing silica with less than 40% silica by weight containing boron
    • C03C3/066Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/076Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium

Abstract

(57) Abstract: Provided is an alkali-free glass having a low dielectric constant and a low dielectric loss, which can be manufactured by firing an electronic circuit board usable at 850 to 950 ° C. by bonding to a resin substrate. SOLUTION: In terms of mol%, SiO 2 : 20 to 44%,
B 2 O 3: 0.5~20%, Al 2 O 3: 3.2~20%,
MgO: 10 to 45%, BaO + SrO: 1 to 20%,
CaO: 0 to 20%, ZnO: 0 to 10%, TiO 2 :
0~5%, ZrO 2: 0~5% , SnO 2: alkali-free glass comprising 0 to 5%.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an alkali-free glass, a composition for an electronic circuit board, and an electronic circuit board suitable for producing an electronic circuit board by firing.

[0002]

2. Description of the Related Art Heretofore, ceramic substrates and resin substrates such as alumina substrates produced by sintering alumina powder have been widely used as electronic circuit substrates. In the alumina substrate, the sintering temperature of the alumina powder is about 160
Since the temperature is as high as 0 ° C., tungsten (melting point: 3400 ° C.) is
Only high melting point metal such as molybdenum (melting point: 2620 ° C.) can be used, and non-high melting point metal such as silver (melting point: 962 ° C.) having a small specific resistance but a melting point of 1600 ° C. or less is fired at the same time when the substrate is manufactured. There was a problem that it could not be used as an electrode material.

[0003] A ceramic substrate is sometimes used by being joined to a resin substrate by soldering. For use in this application, the coefficient of thermal expansion of the ceramic substrate must match the coefficient of thermal expansion of the resin substrate. As such a ceramic substrate, a lithium silicate-based glass ceramic substrate obtained by firing the Li 2 O-SiO 2 based glass powder are known.

[0004]

However, the glass ceramic substrate has a problem of low electrical insulation because it contains Li 2 O. The present invention relates to a method for preparing a material having a melting point of 95
Crystals precipitate when fired at a temperature of 0 ° C. or less, and the sintered body obtained by the firing has an average linear expansion coefficient α at 50 to 350 ° C. of 85 × 10 −7 to 150 × 10 −7 / ° C. An object of the present invention is to provide an alkali-free glass, that is, a glass containing no alkali metal oxide such as Li 2 O and a composition for an electronic circuit board, and an electronic circuit board containing no alkali metal oxide which can be produced at 950 ° C. or lower. .

[0005]

Means for Solving the Problems The present invention, in mol% based on the following oxides, essentially, SiO 2 20~44%, B 2 O 3 0.5~20%, Al 2 O 3 3 .2~20%, MgO 10~45% BaO + SrO 1~20%, CaO 0~20%, 0~10% ZnO, TiO 2 0~5%, ZrO 2 0~5%, from SnO 2 0 to 5% Provide alkali-free glass.

Further, there is provided a composition for an electronic circuit board, which essentially comprises 50 to 100% of the above alkali-free glass powder and 0 to 50% of a ceramic filler in terms of mass percentage. Further, the present invention provides an electronic circuit board obtained by firing the composition for an electronic circuit board.

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION The alkali-free glass of the present invention (hereinafter referred to as the glass of the present invention) is usually powdered into glass powder. The glass powder is preferably mixed with a filler or the like as necessary and fired to produce an electronic circuit board.

[0008] The glass of the present invention, the powder 850-9
It is preferable that the crystals precipitate and sinter when firing is performed at a temperature in the range of 50 ° C. for 5 to 150 minutes. It is more preferable that the crystals precipitate and sinter when held at a temperature in the range of 850 to 900 ° C. for 5 to 60 minutes. The term "sintering" as used herein means that when a fired body obtained by firing a powder obtained by pressing and molding the powder is visually observed, the sintered body is dense and no crack is observed.

The glass of the present invention has a powder of 850-9.
The fired body obtained by firing at 50 ° C. for 5 to 150 minutes preferably has a relative permittivity ε at 8 ° C. and 1 MHz of 20 or less. If it exceeds 8, it may be difficult to use it for an electronic circuit board. Note that ε is typically 6 or more.

[0010] In the glass of the present invention, the dielectric loss tan δ at 20 ° C and 1 MHz of the fired body obtained by subjecting the powder to the above firing is preferably 0.02 or less.
If it exceeds 0.02, its performance may be reduced when used for an electronic circuit board. More preferably 0.01 or less,
More preferably, it is 0.005 or less. Tan
δ is typically 0.001 or more.

The glass of the present invention is prepared by subjecting the powder to
Α of the fired body obtained by performing-7~ 150
× 10-7/ ° C is preferred. 85x
10 -7If it is less than / ° C, it is used when joined to a resin substrate
Expansion coefficient matching with resin substrate may be difficult
There is. More preferably 90 × 10-7/ ℃ or more, and
Preferably 95 × 10-7/ ° C or higher, particularly preferably 10
0x10-7/ ° C or higher.

The glass of the present invention is preferably one in which forsterite is precipitated when the powder is subjected to the above-mentioned firing. If forsterite does not precipitate when firing is performed, α of an electronic circuit board manufactured using the glass powder of the present invention may be reduced.

The glass of the present invention is preferably one in which forsterite and other crystals are precipitated when the powder is fired. If the other crystals do not precipitate, the strength of the electronic circuit board produced using the glass powder of the present invention may be reduced.

In order to further increase the average linear expansion coefficient α at 50 to 350 ° C. of the electronic circuit board,
In order to make nδ smaller, the other crystal is at least one crystal selected from the group consisting of barium aluminosilicate or strontium aluminosilicate and a solid solution thereof (hereinafter collectively referred to as an aluminosilicate crystal). Is preferred.

Next, the composition of the glass of the present invention will be described below by simply writing mol% as%. In addition, the glass of the present invention has Li 2 O, Na which may decrease the electrical insulating property, increase ε, or increase tan δ.
Alkali metal oxides such as 2 O and K 2 O are not substantially contained.

SiO 2 is a network former,
It is a component that lowers ε, is a constituent of forsterite, and is essential. If it is less than 20%, vitrification becomes difficult. It is more preferably at least 22%. 44%
Above this, forsterite is less likely to precipitate. It is preferably at most 39%, more preferably at most 35%, particularly preferably at most 28%.

B 2 O 3 is a component that lowers the glass melting temperature and enhances the sinterability, and is essential. 0.5
%, The glass melting temperature increases. 950 ° C
Sintering becomes difficult when fired at the following temperatures. It is preferably at least 2%, more preferably at least 5%. 20%
Above, the chemical durability decreases. Preferably it is 15% or less.

Al 2 O 3 is a component that stabilizes glass or improves chemical durability and a component that facilitates precipitation of aluminosilicate-based crystals, and is essential. If it is less than 3.2%, tan δ becomes large or the chemical durability decreases. Preferably it is 3.4% or more. If it exceeds 20%, the glass melting temperature becomes high, or sintering becomes difficult when firing at 950 ° C. or lower.
It is preferably at most 15%, more preferably at most 12%.

When the content of SiO 2 is 22 to 28% and the content of Al 2
It is preferable that the O 3 content is 3.4 to 15%.

MgO is a component that stabilizes glass or lowers the glass melting temperature, is a constituent of forsterite, and is essential. If it is less than 10%, the glass becomes unstable or the glass melting temperature becomes high. Further, forsterite hardly precipitates. It is preferably at least 20%, more preferably at least 30%.
If it exceeds 45%, the glass becomes unstable. Preferably it is 40% or less.

BaO and SrO are components that lower the melting temperature of glass, and are components of aluminosilicate-based crystals, and must contain at least one of them. If the content of BaO + SrO is less than 1%, the melting temperature of the glass becomes high, and the aluminosilicate-based crystals hardly precipitate. It is preferably at least 3%, more preferably at least 5%. If the content of BaO + SrO exceeds 20%, devitrification tends to occur, and forsterite hardly precipitates. Preferably it is 10% or less.

Although CaO is not essential, it may be contained up to 20% in order to lower the glass melting temperature. 20%
If it is super, it tends to devitrify. Moreover, when firing, anorthite may precipitate and α may be reduced. It is preferably at most 18%, particularly preferably at most 15%. C
When aO is contained, its content is preferably at least 1%, more preferably at least 3%.

ZnO is not essential, but may be contained up to 10% in order to lower the glass melting temperature. 10%
If it is more than 1, the chemical durability, especially the acid resistance, decreases. It is preferably at most 7%.

Both TiO 2 and ZrO 2 are not essential, but may each be contained up to 5% in order to lower the glass melting temperature or to promote crystal precipitation during firing. If it exceeds 5%, the glass becomes unstable or ε becomes large. Preferably each is 3% or less.

SnO 2 is not essential, but may be contained up to 5% in order to increase the water resistance of the glass or to promote crystal precipitation during firing. If it exceeds 5%, the glass becomes unstable or ε becomes large. Preferably it is 3% or less.

The glass of the present invention consists essentially of the above-mentioned components, but may contain other components as long as the object of the present invention is not impaired. The total content of the "other components" is preferably 10% or less. If it exceeds 10%, the glass may be easily devitrified. It is more preferably at most 5%.

The following are examples of the "other components". That is, Bi 2 O 3 , P 2 O 5 , F or the like may be contained in order to lower the glass melting temperature. Also,
Fe 2 O 3 , MnO, CuO,
Coloring components such as CoO, V 2 O 5 and Cr 2 O 3 may be contained. PbO is preferably not contained.

Next, the composition for an electronic circuit board of the present invention (hereinafter referred to as the composition of the present invention) will be described. In the composition of the present invention, α of a fired body obtained by firing at 850 to 950 ° C. for 5 to 150 minutes is 85 × 10 −7 to 15
It is preferable that it is 0 × 10 −7 / ° C., ε is 8 or less, and tan δ is 0.02 or less. Note that ε, ta
nδ is typically 6 or more and 0.001 or more, respectively.

The composition of the composition of the present invention will be described below by using a percentage by mass. The glass powder of the present invention is essential. If it is less than 50%, it becomes difficult to produce an electronic circuit board by the above-mentioned baking. Preferably 70%
That is all.

The ceramic filler is not essential, but may be contained up to 50% in order to increase the strength of the fired body obtained by firing. Preferably it is 30% or less.

The melting point of the ceramic filler is 1000 ° C.
Ceramic powder or softening point above 1000 ° C
It is preferable that the above-mentioned glass powder is used. More preferably, α-quartz (transition temperature: 1450 ° C.), amorphous silica (T S : 1500 ° C.), alumina (melting point: 2050)
° C), magnesia (melting point: 2820 ° C), forsterite (melting point: 1890 ° C), cordierite (transition temperature: 1450 ° C), mullite (melting point: 1850 ° C), zircon (melting point: 1680 ° C) and zirconia (melting point) :
2710 ° C.).

Although the composition for an electronic circuit board of the present invention consists essentially of the above-mentioned components, it may contain other components as long as the object of the present invention is not impaired. The total content of the "other components" is preferably 10% or less, more preferably 5% or less. Examples of the “other component” include a heat-resistant coloring pigment.

When the composition for an electronic circuit board of the present invention is used for producing an electronic circuit board, it is usually used as a green sheet. That is, the composition for an electronic circuit board is mixed with a binder. Next, a slurry is formed by adding a solvent or the like, and the slurry is formed into a sheet shape on a film such as polyethylene terephthalate by a doctor blade method or the like. Finally, it is dried to remove the solvent and the like to obtain a green sheet. Incidentally, examples of the resin include polyvinyl butyral and acrylic resin, and examples of the solvent include dibutyl phthalate, dioctyl phthalate, and butylbenzyl phthalate. The green sheet is fired to form an electronic circuit board.

The electronic circuit board of the present invention is produced, for example, by forming the composition for an electronic circuit board of the present invention into a green sheet and firing it as described above.

The electronic circuit board of the present invention preferably has ε of 8 or less. The tan δ of the electronic circuit board of the present invention is preferably 0.02 or less. Α of the electronic circuit board of the present invention is preferably 85 × 10 −7 to 150 × 10 −7 / ° C.

[0036]

EXAMPLES Raw materials were prepared and mixed so as to have the composition shown in terms of mol% in the column of SiO 2 to SnO 2 in Table 1, and the mixed raw materials were put in a platinum crucible and melted at 1500 ° C. for 120 minutes. Thereafter, the molten glass was poured out. A part of the obtained glass was pulverized by an alumina ball mill for 10 hours to obtain a glass powder, and the remaining glass was gradually cooled in a lump state without pulverization. Examples 1 to 4 are Examples and Examples 5 to 7 are Comparative Examples.

For the glass powders of Examples 1 to 7,
The precipitated crystals, ε, tan δ, and α (unit: 10 −7 / ° C.) were measured or evaluated. The results are shown in the table.

Sinterability: 2 g of glass powder is 12.7 m in diameter
A sample formed by pressure molding into a cylindrical shape of m was used as a sample. The fired body obtained by holding this sample at 900 ° C. for 60 minutes was visually observed.場合 indicates that the fired body was densely sintered and no cracks were observed, and x indicates that it was not.

Precipitated crystals: The sintered body obtained by calcining the glass powder at 900 ° C. for 30 minutes was pulverized, and the precipitated crystals were identified by X-ray diffraction. In Table 1, F indicates forsterite, B indicates barium aluminosilicate, S indicates strontium aluminosilicate, N indicates spinel, M indicates melwinite, and A indicates akermanite.

Ε, tan δ: 60 g of 40 g of glass powder
900 × 60mm mold and pressure molded
Baking at 60 ° C. for 60 minutes. The obtained fired body is 50 mm × 5
Processed to 0mm x 3mm, using LCR meter,
The dielectric constant and the dielectric loss at 1 MHz at 20 ° C. were measured. Example 7 could not be measured because cracks occurred in the fired body.

Α: A fired body obtained by firing glass powder at 900 ° C. for 60 minutes was processed into a cylindrical shape having a diameter of 2 mm and a length of 20 mm as a sample, which was measured using a differential thermal dilatometer. In Example 7, the measurement was performed on a fired body in which cracks occurred.

[0042]

[Table 1]

[0043]

According to the present invention, an electronic circuit board having a small dielectric constant and a small dielectric loss and capable of matching an expansion coefficient with a resin substrate when used by being joined to a resin substrate by solder is used for an electrode made of silver or the like. It can be manufactured by firing simultaneously with the material.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H05K 1/03 610 H05K 1/03 610C (72) Inventor Jiro Chiba 2- Kosugaya, Sakae-ku, Yokohama-shi, Kanagawa Prefecture 42-18 F-term (reference) 4G062 AA09 AA11 BB01 BB05 BB06 DA04 DA05 DB03 DB04 DC02 DC03 DC04 DD01 DE01 DE02 DE03 DF01 EA01 EB01 EC01 ED04 ED05 EE01 EE02 EE03 EE04 EF01 EF02 EF03 EF04 EF01 EF04 EF01 EF04 EF01 EF01 EF01 EF01 EF01 EF01 EF01 EF01 EG01 EG01 EG01 EG01 FC03 FD01 FE01 FE02 FE03 FF01 FG01 FH01 FJ01 FK01 FL01 GA01 GA10 GB01 GC01 GD01 GE01 HH01 HH03 HH05 HH07 HH09 HH13 HH15 HH17 HH20 JJ01 JJ03 JJ05 JJ07 JJ10 KK01 KK17 NN10 KK03 NN07

Claims (6)

    [Claims]
  1. (1) In terms of mol% based on the following oxides, essentially 20 to 44% of SiO 2 , 0.5 to 20% of B 2 O 3 , 3.2 to 20% of Al 2 O 3 , and MgO 10 Alkali-free glass consisting of 4545% BaO + SrO 1-20%, CaO 0-20%, ZnO 0-10%, TiO 2 0-5%, ZrO 2 0-5%, SnO 2 0-5%.
  2. 2. The method according to claim 1, wherein the content of SiO 2 is 22 to 28% and the content of Al 2
    Alkali-free glass according to claim 1 O 3 content is from 3.4 to 15%.
  3. 3. The alkali-free glass according to claim 1, wherein the powder is heated at 850 to 950 ° C. to 5 to 150 ° C.
    An alkali-free glass on which at least one type of crystal and forsterite selected from the group consisting of barium aluminosilicate, strontium aluminosilicate, and a solid solution thereof are precipitated when held for one minute.
  4. 4. The method according to claim 1, wherein, in terms of mass percentage,
    Powder of alkali-free glass according to 2 or 3 50-1
    A composition for an electronic circuit board, comprising 00% and a ceramic filler of 0 to 50%.
  5. 5. The composition for an electronic circuit board according to claim 4, wherein the calcined body obtained by maintaining the composition at 850 to 950 ° C. for 5 to 150 minutes has an average linear expansion coefficient at 50 to 350 ° C. of 85 × 10 5. -7 to 150 × 10 -7 / ° C, 20 ° C, 1MHz
    A composition for an electronic circuit board having a relative dielectric constant of 8 or less at 20 ° C. and a dielectric loss at 20 ° C. and 1 MHz of 0.02 or less.
  6. 6. An electronic circuit board obtained by firing the composition for an electronic circuit board according to claim 4.
JP2001147679A 2001-05-17 2001-05-17 Alkali-free glass, composition for electronic circuit board and electronic circuit board Withdrawn JP2002338295A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001147679A JP2002338295A (en) 2001-05-17 2001-05-17 Alkali-free glass, composition for electronic circuit board and electronic circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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Publications (1)

Publication Number Publication Date
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Country Link
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004094338A1 (en) * 2003-04-21 2004-11-04 Asahi Glass Company, Limited Lead-free glass for forming dielectric, glass ceramics composition for forming dielectric, dielectric and method for producing laminated dielectric
JP2006056769A (en) * 2004-07-23 2006-03-02 Nippon Sheet Glass Co Ltd Glass composition for sealing, glass frit for sealing, and glass sheet for sealing
JP2007161569A (en) * 2005-11-18 2007-06-28 Nihon Yamamura Glass Co Ltd Glass composition for sealing
US7829490B2 (en) 2006-12-14 2010-11-09 Ppg Industries Ohio, Inc. Low dielectric glass and fiber glass for electronic applications
US8697591B2 (en) 2006-12-14 2014-04-15 Ppg Industries Ohio, Inc. Low dielectric glass and fiber glass
US9056786B2 (en) 2006-12-14 2015-06-16 Ppg Industries Ohio, Inc. Low density and high strength fiber glass for ballistic applications
US9156728B2 (en) 2006-12-14 2015-10-13 Ppg Industries Ohio, Inc. Low density and high strength fiber glass for ballistic applications
US9394196B2 (en) 2006-12-14 2016-07-19 Ppg Industries Ohio, Inc. Low density and high strength fiber glass for reinforcement applications

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55126547A (en) * 1979-03-20 1980-09-30 Ohara Inc Glass for bead
US4624934A (en) * 1984-05-04 1986-11-25 Asahi Glass Company Ltd. Ceramic composition for multilayer printed wiring board
JPH01141837A (en) * 1987-11-27 1989-06-02 Shoei Kagaku Kogyo Kk Material for dielectric body for circuit substrate
JPH06199541A (en) * 1993-01-05 1994-07-19 Matsushita Electric Ind Co Ltd Glass-ceramic composition
JPH0758454A (en) * 1993-08-11 1995-03-03 Matsushita Electric Ind Co Ltd Glass ceramic multilayered substrate
JPH11135899A (en) * 1997-10-30 1999-05-21 Kyocera Corp Ceramic circuit board
JP2000063144A (en) * 1998-08-11 2000-02-29 Asahi Glass Co Ltd Glass for information recording medium substrate
EP1008563A1 (en) * 1998-12-10 2000-06-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Alkali free glass-ceramics as sealing material for high temperature applications
US6475938B1 (en) * 1997-04-14 2002-11-05 Norsk Hydro Asa Method of forming a glass ceramic material

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55126547A (en) * 1979-03-20 1980-09-30 Ohara Inc Glass for bead
US4624934A (en) * 1984-05-04 1986-11-25 Asahi Glass Company Ltd. Ceramic composition for multilayer printed wiring board
JPH01141837A (en) * 1987-11-27 1989-06-02 Shoei Kagaku Kogyo Kk Material for dielectric body for circuit substrate
JPH06199541A (en) * 1993-01-05 1994-07-19 Matsushita Electric Ind Co Ltd Glass-ceramic composition
JPH0758454A (en) * 1993-08-11 1995-03-03 Matsushita Electric Ind Co Ltd Glass ceramic multilayered substrate
US6475938B1 (en) * 1997-04-14 2002-11-05 Norsk Hydro Asa Method of forming a glass ceramic material
JPH11135899A (en) * 1997-10-30 1999-05-21 Kyocera Corp Ceramic circuit board
JP2000063144A (en) * 1998-08-11 2000-02-29 Asahi Glass Co Ltd Glass for information recording medium substrate
EP1008563A1 (en) * 1998-12-10 2000-06-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Alkali free glass-ceramics as sealing material for high temperature applications

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004094338A1 (en) * 2003-04-21 2004-11-04 Asahi Glass Company, Limited Lead-free glass for forming dielectric, glass ceramics composition for forming dielectric, dielectric and method for producing laminated dielectric
CN100368340C (en) * 2003-04-21 2008-02-13 旭硝子株式会社 Non-lead glass for forming dielectric, glass ceramic composition for forming dielectric, dielectric, and process for producing laminated dielectric
US7544629B2 (en) 2003-04-21 2009-06-09 Asahi Glass Company, Limited Non-lead glass for forming dielectric, glass ceramic composition for forming dielectric, dielectric, and process for producing laminated dielectric
JP2006056769A (en) * 2004-07-23 2006-03-02 Nippon Sheet Glass Co Ltd Glass composition for sealing, glass frit for sealing, and glass sheet for sealing
JP2007161569A (en) * 2005-11-18 2007-06-28 Nihon Yamamura Glass Co Ltd Glass composition for sealing
US8697590B2 (en) 2006-12-14 2014-04-15 Ppg Industries Ohio, Inc. Low dielectric glass and fiber glass for electronic applications
US7829490B2 (en) 2006-12-14 2010-11-09 Ppg Industries Ohio, Inc. Low dielectric glass and fiber glass for electronic applications
US8697591B2 (en) 2006-12-14 2014-04-15 Ppg Industries Ohio, Inc. Low dielectric glass and fiber glass
US9056786B2 (en) 2006-12-14 2015-06-16 Ppg Industries Ohio, Inc. Low density and high strength fiber glass for ballistic applications
US9096462B2 (en) 2006-12-14 2015-08-04 Ppg Industries Ohio, Inc. Low dielectric glass and fiber glass
US9156728B2 (en) 2006-12-14 2015-10-13 Ppg Industries Ohio, Inc. Low density and high strength fiber glass for ballistic applications
US9394196B2 (en) 2006-12-14 2016-07-19 Ppg Industries Ohio, Inc. Low density and high strength fiber glass for reinforcement applications
US10647610B2 (en) 2006-12-14 2020-05-12 Ppg Industries Ohio, Inc. Low density and high strength fiber glass for reinforcement applications

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