JP2002060926A5 - Method for manufacturing light emitting device - Google Patents

Method for manufacturing light emitting device Download PDF

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Publication number
JP2002060926A5
JP2002060926A5 JP2001128812A JP2001128812A JP2002060926A5 JP 2002060926 A5 JP2002060926 A5 JP 2002060926A5 JP 2001128812 A JP2001128812 A JP 2001128812A JP 2001128812 A JP2001128812 A JP 2001128812A JP 2002060926 A5 JP2002060926 A5 JP 2002060926A5
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JP
Japan
Prior art keywords
emitting device
light emitting
manufacturing light
manufacturing
light
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Application number
JP2001128812A
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Japanese (ja)
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JP4785269B2 (en
JP2002060926A (en
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Priority to JP2001128812A priority Critical patent/JP4785269B2/en
Priority claimed from JP2001128812A external-priority patent/JP4785269B2/en
Publication of JP2002060926A publication Critical patent/JP2002060926A/en
Publication of JP2002060926A5 publication Critical patent/JP2002060926A5/en
Application granted granted Critical
Publication of JP4785269B2 publication Critical patent/JP4785269B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【特許請求の範囲】
【請求項1】
成膜室に設けられた基板に有機EL材料を蒸着し、前記成膜室より前記基板を取り出した後、
前記成膜室に設けられた部品に対して赤外光、紫外光もしくは可視光を照射することにより該部品に付着した蒸着材料を昇華させ、排気することを特徴とする発光装置の作製方法。
【請求項2】
請求項1において、前記蒸着材料を昇華させる際、前記成膜室内にハロゲン族元素を含むガスを流すことを特徴とする発光装置の作製方法。
【請求項3】
請求項1又は請求項2において、前記昇華された蒸着材料は排気中にプラズマに晒されることを特徴とする発光装置の作製方法。
【請求項4】
請求項3において、前記プラズマは酸素プラズマであることを特徴とする発光装置の作製方法。
[Claims]
(1)
After depositing an organic EL material on a substrate provided in a film formation chamber and taking out the substrate from the film formation chamber,
A method for manufacturing a light-emitting device, wherein a component provided in the film formation chamber is irradiated with infrared light, ultraviolet light, or visible light to sublimate a vapor deposition material attached to the component and exhaust the material.
(2)
2. The method for manufacturing a light-emitting device according to claim 1, wherein a gas containing a halogen group element is flowed into the film formation chamber when the deposition material is sublimated.
(3)
3. The method for manufacturing a light-emitting device according to claim 1, wherein the sublimated deposition material is exposed to plasma in an exhaust gas.
(4)
4. The method according to claim 3, wherein the plasma is oxygen plasma.

JP2001128812A 2000-05-02 2001-04-26 Manufacturing method of light emitting device and cleaning method of film forming device Expired - Fee Related JP4785269B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001128812A JP4785269B2 (en) 2000-05-02 2001-04-26 Manufacturing method of light emitting device and cleaning method of film forming device

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2000-133229 2000-05-02
JP2000133221 2000-05-02
JP2000133229 2000-05-02
JP2000-133221 2000-05-02
JP2000133229 2000-05-02
JP2000133221 2000-05-02
JP2001128812A JP4785269B2 (en) 2000-05-02 2001-04-26 Manufacturing method of light emitting device and cleaning method of film forming device

Related Child Applications (1)

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JP2011114537A Division JP4890654B2 (en) 2000-05-02 2011-05-23 Manufacturing method of light emitting device and cleaning method of film forming device

Publications (3)

Publication Number Publication Date
JP2002060926A JP2002060926A (en) 2002-02-28
JP2002060926A5 true JP2002060926A5 (en) 2008-05-01
JP4785269B2 JP4785269B2 (en) 2011-10-05

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SG149680A1 (en) 2001-12-12 2009-02-27 Semiconductor Energy Lab Film formation apparatus and film formation method and cleaning method
JP2004006311A (en) * 2002-04-15 2004-01-08 Semiconductor Energy Lab Co Ltd Method and apparatus for manufacturing light-emitting device
US7309269B2 (en) 2002-04-15 2007-12-18 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device
TWI336905B (en) * 2002-05-17 2011-02-01 Semiconductor Energy Lab Evaporation method, evaporation device and method of fabricating light emitting device
DE60305246T2 (en) * 2002-07-19 2006-09-14 Lg Electronics Inc. Thermal PVD coating source for organic electroluminescent layers
US20040040504A1 (en) 2002-08-01 2004-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
JP4515060B2 (en) * 2002-08-30 2010-07-28 株式会社半導体エネルギー研究所 Manufacturing apparatus and method for producing layer containing organic compound
TWI277363B (en) 2002-08-30 2007-03-21 Semiconductor Energy Lab Fabrication system, light-emitting device and fabricating method of organic compound-containing layer
WO2004028214A1 (en) * 2002-09-20 2004-04-01 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and manufacturing method of light emitting device
US7211461B2 (en) 2003-02-14 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
US7091453B2 (en) 2003-02-27 2006-08-15 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus by means of light irradiation
JP4493926B2 (en) 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 Manufacturing equipment
US7211454B2 (en) 2003-07-25 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate
WO2006016669A1 (en) 2004-08-13 2006-02-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5264013B2 (en) * 2004-08-13 2013-08-14 株式会社半導体エネルギー研究所 Organic semiconductor layer deposition system
KR100965408B1 (en) * 2004-12-02 2010-06-24 엘아이지에이디피 주식회사 Apparatus for depositing organic and inorganic material of oled
JP4827842B2 (en) * 2005-06-15 2011-11-30 株式会社アルバック Sealing apparatus and sealing method
KR20070043541A (en) * 2005-10-21 2007-04-25 삼성에스디아이 주식회사 Apparatus of thin film evaporation and method for thin film evaporation using the same
KR100727470B1 (en) * 2005-11-07 2007-06-13 세메스 주식회사 Apparatus and method for deposition organic compounds
KR100842183B1 (en) * 2006-12-29 2008-06-30 두산메카텍 주식회사 Vapordeposition source scaning appauatus
JP2009167020A (en) * 2008-01-10 2009-07-30 Hitachi Maxell Ltd Method for cleaning member to be cleaned and method for manufacturing optical element
US8409672B2 (en) 2008-04-24 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
KR101504443B1 (en) * 2010-10-20 2015-03-19 가부시키가이샤 알박 Apparatus for organic film formation and method for organic film formation
JP5875851B2 (en) * 2011-12-20 2016-03-02 株式会社アルバック Thin film manufacturing method, thin film manufacturing apparatus
JP2018538429A (en) * 2016-10-25 2018-12-27 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Measuring assembly, evaporation source, deposition apparatus and method therefor for measuring deposition rate
JP2017036512A (en) * 2016-11-07 2017-02-16 株式会社半導体エネルギー研究所 Deposition device
WO2018189906A1 (en) * 2017-04-14 2018-10-18 堺ディスプレイプロダクト株式会社 Production method and production device for organic el display device
CN113227436A (en) * 2018-12-21 2021-08-06 应用材料公司 Vapor deposition apparatus and method for coating a substrate in a vacuum chamber
CN115584475B (en) * 2022-10-28 2024-06-07 富联科技(兰考)有限公司 Method for cleaning coating equipment and coating equipment

Family Cites Families (1)

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