JP2002057513A - Extremely high frequency module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an extremely high frequency module capable of presenting the characteristics of a high frequency component package by flip-chip mounting at the maximum. SOLUTION: On a dielectric substrate 6 for packaging a high frequency component 4 by flip-chip mounting, a release hole 6a is formed at the packaging position of the high frequency component 4 and on a pedestal for supporting and fixing this dielectric substrate 6, a recessed part 8a is formed at a position facing the high frequency component 4 packaged on the dielectric substrate 6. Further, a radio wave absorber 9 is mounted in which recessed part 8a. Thus, the high frequency component 4 packaging by flip-chip mounting on the dielectric substrate 6 faces the radio wave absorber 9 mounted in the recessed part 8a on the pedestal 8 through the release hole 6a on the dielectric substrate 6, and electromagnetic waves leaking from the high frequency component 4 are absorbed by the radio wave absorber 9. As a result, the propagation of electromagnetic waves between the high frequency component 4 and the dielectric substrate 6 and between the high frequency component 4 and the pedestal 8 is suppressed, and isolation between the respective ports of the high frequency component 4 is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a millimeter wave module having a dielectric substrate on which high frequency components are flip-chip mounted by bump connection.

[0002]

2. Description of the Related Art Conventionally, in the millimeter wave band (30 GHz to 30 GHz).
MMIC (Microwave Monolith) that handles signals of 0 GHz
When mounting a high-frequency component such as an integrated circuit (IC) on a circuit board, a connection electrode formed on the lower surface of the high-frequency component is used to minimize the length of the conductor at the connection portion that affects high-frequency characteristics. Flip-chip mounting is performed using bump connection with a connection electrode provided on a circuit board opposed thereto.

[0003]

However, when the bump connection is made, the planar line formed on the high-frequency component and the dielectric substrate face each other in a close state, so that the electromagnetic wave leaked from the high-frequency component becomes inconsistent. By repeatedly reflecting between the dielectric substrate and the high-frequency component or propagating through the inside of the dielectric substrate, for example, in a switch having a plurality of ports, isolation between the ports is reduced. There is a problem that the characteristics of the high-frequency component are deteriorated.

On the other hand, Japanese Patent Application Laid-Open No. 11-346103 discloses
Japanese Patent Application Laid-Open Publication No. H11-163,086 discloses a configuration in which a concave portion is provided in a mounting position of a high-frequency component on a dielectric substrate to suppress deterioration in characteristics of the high-frequency component due to flip-chip mounting. However, even in this case, there is a possibility that the electromagnetic wave leaked from the high-frequency component may cause cavity resonance in the concave portion, and the deterioration of the characteristics of the high-frequency component cannot be sufficiently suppressed.

[0005] In a frequency region such as a millimeter wave band,
Even if a bump connection is made, the connection has a large effect on the transmission characteristics, and a large transmission loss occurs due to the reflection of a signal generated at the connection, or the dielectric constant between the high-frequency component and the dielectric substrate is extremely different. , As shown in FIG.
The flat line 5 (coplanar lines 5a and 5b) on the high-frequency component 4 to be connected and the flat line 10 (coplanar lines 10a and 10b with the back conductor UG) on the dielectric substrate 6 form the signal line conductors 5a and 5b. The width of each of the conductors 10a greatly differs, and one signal line conductor 10a and the other ground conductor 5b face each other at the connection end connected by the bump B, and a parasitic capacitance generated between the conductors 10a and 5b. By
In some cases, signal loss and reflection at the connection end may increase.

As a result, in such a case, there is a problem that the characteristics of the high-frequency component 4 mounted flip-chip on the dielectric substrate 6 cannot be sufficiently brought out. When the widths of the signal line conductors of the plane lines 5 and 10 to be connected are different from each other, the characteristic impedance is kept constant (for example, 50Ω) while the characteristic impedance is kept constant (for example, 50Ω).
Side) signal line conductor width to the other side (usually the high-frequency component 4 side)
There is known a method of converting the line width so as to match the signal line conductor width. However, especially in a coplanar line where the signal line conductor and the ground conductor are formed on the same plane, when the signal line conductor width must be adjusted to the narrow side, the signal line conductor whose line width is converted and the ground conductor The gap becomes too narrow, making it difficult to form a line pattern.
In some cases, such a technique cannot be used.

The present invention has been made to solve the above problems.
An object of the present invention is to provide a millimeter-wave module capable of maximizing the characteristics of a high-frequency component mounted on a flip chip.

[0008]

According to the first aspect of the present invention, there is provided a millimeter-wave module in which a high-frequency component is mounted on a dielectric substrate on which flip-chip mounting is performed. Drill a hole to open,
A radio wave absorber is arranged at a position facing the high-frequency component mounted on the dielectric substrate with the hole formed therebetween.

In the millimeter-wave module of the present invention configured as described above, the electromagnetic wave passing through the leak hole from the high-frequency component is absorbed by the radio wave absorber. That is, the electromagnetic wave leaked from the high-frequency component is prevented from causing cavity resonance in the space between the high-frequency component and the dielectric substrate, or being propagated along the dielectric substrate.

Therefore, according to the millimeter-wave module of the present invention, the characteristics of the high-frequency component such as isolation between terminals are not largely changed by flip-mounting the high-frequency component. You can get the most out of it. In addition, since it is not necessary to consider such a characteristic change at the time of design, it is easy to design a high-frequency component to be flip-chip mounted, and it is possible to shorten a period required for manufacturing the millimeter wave module.

According to a second aspect of the present invention, there is provided a case where the millimeter-wave module has a base for supporting and fixing the dielectric substrate against the mounting surface of the high-frequency component from the back side of the non-mounting surface. It is desirable to form a recess for accommodating the radio wave absorber in the base. In this case, there is no need to prepare a special fixture or a new space for installing the radio wave absorber, so that the radio wave absorber can be easily installed without increasing the size of the device.

Next, in the millimeter-wave module according to the third aspect, the mounting surface on which the high-frequency component is flip-chip mounted is:
There is provided a dielectric substrate on which a planar line having a connection end with the high-frequency component is formed, and a ground electrode is formed on a non-mounting surface on the back side of the mounting surface. The planar line on the dielectric substrate includes a coupling line portion including a portion including a connection end and a transmission line portion including a portion other than the coupling line portion. Electrodes have been removed.

In the millimeter-wave module of the present invention thus configured, the electromagnetic wave propagating through the planar line on the dielectric substrate is released from the coupling with the ground electrode on the non-mounting surface at the coupling line portion, and It is easy to shift to the flat line on the high-frequency component side flip-chip mounted on the body substrate.

Therefore, according to the millimeter-wave module of the present invention, since the loss of the signal at the connection end where the bump connection is made is reduced, the performance of the high-frequency component mounted flip-chip is sufficiently brought out by the bump connection. be able to. The line length of the coupling line portion is defined as λg, where λg is the in-line wavelength of the signal in the used frequency band.
Desirably, the value is set to about an integral multiple of g / 4. In this case, it is easy to achieve matching at the conversion part between the coupling line part and the transmission line part, and it is possible to reduce the loss at this conversion part.

In order to make the dielectric substrate compact, it is desirable that the coupling line portion is provided only in a portion facing the high-frequency component.
By the way, the millimeter-wave module has a base for supporting and fixing the dielectric substrate from the non-mounting surface side, and when the base has conductivity, when the non-mounting surface of the coupling line portion is not provided. Even if the ground electrode is removed, the electromagnetic wave propagating in the coupling line portion is coupled to the base, weakening the coupling with the flat line on the high-frequency component side, so that the loss at the connection end can be reduced. I can no longer do it.

Therefore, in such a case, it is desirable to form a concave portion on the base at least in a portion facing the connecting portion. Then, the base can be manufactured by applying metal plating to the surface of the injection-molded resin main body, for example, as described in claim 7, and in this case, the base is manufactured by only metal processing. Can be manufactured inexpensively and lightly.

According to the present invention, a hole is formed in the dielectric substrate at the mounting position of the high-frequency component, and a recessed portion is formed by expanding the portion facing the hole. A radio wave absorber may be stored. In this case, not only can the signal reflection at the connection end between the dielectric substrate and the high-frequency component be reduced, but also the effect of electromagnetic waves leaking from the high-frequency component can be reduced as in the first aspect of the invention. The performance of the flip-chip mounted high frequency components can be maximized.

Next, in the millimeter-wave module according to the ninth aspect, the planar line on the dielectric substrate has a coupling line portion formed of a coplanar line, a transmission line portion formed of a ground coplanar line, and mounting the dielectric substrate. The signal line conductor and the ground conductor exist on the surface side.

In the millimeter-wave module of the present invention thus configured, it is not necessary to newly provide an electrode for connecting to the ground conductor of the high-frequency component on the mounting surface side of the dielectric substrate. Can easily be flip-chip mounted. And when the coplanar line is used at the connection end with the high frequency component,
The distance between the signal line conductor of the high-frequency component-side flat line and the ground conductor of the dielectric substrate-side flat line at the connection end between the dielectric substrate-side flat line and the high-frequency component-side flat line. Alternatively, it is desirable to set the distance between the ground conductor of the high-frequency component-side flat line and the signal line conductor of the dielectric substrate-side flat line to be larger than the distance between the signal line conductor and the ground conductor in the same plane line.

In the thus constructed millimeter-wave module of the present invention, between the high-frequency component-side planar line and the dielectric substrate-side planar line, the coupling between the signal line conductors and between the ground conductors is maximized, Since the occurrence of unnecessary coupling (parasitic capacitance) between the line conductor and the ground conductor can be reduced, the loss at the connection end can be surely reduced.

In order to adjust the relationship between the high-frequency component-side flat line and the dielectric substrate-side flat line as described above, for example, the height of the bumps is adjusted as described in claim 11. The distance between the high-frequency component-side flat line and the dielectric substrate-side flat line may be adjusted, and the line width of the dielectric substrate-side flat line may be adjusted near the connection end with the high-frequency component. May be changed.

The former for adjusting the height of the bumps (claim 1)
In the case of 1), the parasitic capacitance generated at the connection end by flip-chip mounting can be reduced without making a significant change to the high-frequency component and each planar line on the dielectric substrate.
However, if the height of the bump is too high, the impedance mismatch at the bump connection part becomes large, the signal reflection becomes large, and the loss at the connection end may be increased. .

Therefore, in such a case, the latter method (Claim 12) for converting the line width of the plane line on the dielectric substrate is used alone or in combination with the method according to Claim 11. It is desirable. Then, when converting the line width of the dielectric substrate side planar line, as described in claim 13,
In a portion where the line width is converted, it is desirable to form the tapered shape so that the line width changes continuously. In this case, since the electromagnetic waves propagate smoothly without being concentrated on the line width conversion portion, the increase in loss due to the line width conversion can be minimized.

In the portion where the line width is converted, it is desirable to design the signal line conductor width and the gap between the signal line conductor and the ground conductor so that the characteristic impedance of the line does not change. If such a design cannot be performed due to limitations or the like, claim 1
As described in 4, it is desirable to design so that the gap between the signal line conductor and the ground conductor is kept constant. In this case, since etching failure is prevented when the pattern of the signal line conductor or the ground conductor is etched, fine processing can be performed to the limit of the processing accuracy of the line pattern.

That is, when the gap between the signal line conductor and the ground conductor is formed by etching, the progress of the etching changes depending on the time of immersion in the etching solution. In addition, no excessive or insufficient etching occurs, and therefore, defects are unlikely to occur.

By the way, for bump connection of high frequency components,
It is desirable to use a micro bump made of gold. That is, in the case of a microbump made of gold, since a high positional accuracy is obtained as is well known, deterioration of characteristics due to positional deviation can be reliably prevented.

[0027]

Embodiments of the present invention will be described below with reference to the drawings. [First Embodiment] FIG. 1 is a perspective view (including a partially broken section) showing a configuration of a millimeter wave module of a first embodiment to which the present invention is applied, and FIG. 2 is a schematic view showing a sectional structure. It is.

As shown in FIGS. 1 and 2, the millimeter-wave module 2 of the present embodiment includes a high-frequency component 4 formed by converting a high-frequency switch into an MMIC, and a high-frequency component 4 on one surface (hereinafter referred to as a “mounting surface”). And a dielectric substrate 6 having a ground electrode UG formed on the entire surface on the other surface (hereinafter referred to as a “non-mounting surface”), and supporting the dielectric substrate 6 by abutting from the non-mounting surface side. And a base 8 to be fixed.

The high-frequency component 4 is an MMIC of a so-called SP3T switch capable of outputting one input in three directions, and a circuit pattern is formed using a coplanar line. This circuit pattern is formed on the lower surface of the package facing the dielectric substrate 6 when mounted on the dielectric substrate 6, and the periphery of the lower surface of the rectangular package has a total of four for inputting and outputting signals. One port (connection electrode) is provided on each side, and a bias electrode for applying a bias power is provided between the ports.

Next, the dielectric substrate 6 is made of an alumina ceramic substrate, and a punched hole 6a large enough to be closed by the high-frequency component 4 is formed at the center of the dielectric substrate 6 where the high-frequency component 4 is mounted. It is formed by laser processing. A coplanar line 10 for supplying a signal to or extracting a signal from each port of the high-frequency component 4 extends from each side of the opening edge of the hole 6 a to each side of the outer periphery of the dielectric substrate 6. Each is wired.

The coplanar line 10 includes a signal line conductor 10
The width of the signal line conductor 10a and the gap between the signal line conductor 10a and the ground conductor 10b are different from each other at the end portion (hereinafter, referred to as a “coupled line portion”) 11 of each of the high frequency components 4 at the high frequency component 4.
The size of the coplanar line is substantially the same as that of the upper coplanar line, and the other portion (hereinafter referred to as “transmission line portion”) 12 is formed to be larger than the coupling line portion 11.
However, the connecting portion between the coupling line portion 11 and the transmission line portion 12 is formed in a tapered shape so that the width of the signal line conductor 10a and the gap gradually change. It is designed so that the impedance becomes 50Ω.

An electrode pad P for supplying bias power to the high-frequency component 4 is also formed at the opening edge of the hole 6a, corresponding to the bias electrode formed on the high-frequency component 4. In the high-frequency component 4, each of the ports (connection electrodes) and the bias electrode located at the peripheral edge of the lower surface of the package are connected to each of the coplanar lines 1 on the dielectric substrate 6.
0 and the bumps are connected to the electrode pads P and are mounted on the dielectric substrate 6 with the holes 6a closed.

On the other hand, a base 8 for supporting and fixing the dielectric substrate 6
A concave portion 8a having an opening diameter larger than the hole 6a is provided at a position facing the high-frequency component 4 mounted on the dielectric substrate 6.
Are formed, and a radio wave absorber 9 is inserted into the concave portion 8a. Note that the thickness of the radio wave absorber 9 is
The air layer is formed to be smaller than the depth a and between the high-frequency component 4 mounted on the dielectric substrate 6 (see FIG. 2). The base 8 is made of a metal piece made of aluminum, and a recess 8a is formed by counterboring the metal piece.

Here, the millimeter wave module 2 of the present embodiment
Will be described with reference to FIG. As shown in FIG. 3, first, a gold microbump B is formed on the lower surface of the package of the high-frequency component 4, and the high-frequency component 4 with the microbump is face-down on a dielectric substrate 6, thereby forming the high-frequency component 4. Flip chip mounting is performed on the dielectric substrate 6 (see (a) in the figure). Separately, the radio wave absorber 9 is inserted into the concave portion 8a of the base 8, and the radio wave absorber 9 is
It is fixed by an adhesive or the like so as not to move inside a (see (b) in the figure).

Then, the dielectric substrate 6 on which the high frequency component 4 is flip-mounted is mounted on the base 8 on which the radio wave absorber 9 is mounted in the recess 8a, and the high frequency component 4 and the radio wave absorber 9 are removed through the hole 6a. Are positioned and fixed so as to face each other (see (c) in the figure). As described above, in the millimeter wave module 2 of the present embodiment, the high frequency component 4 flip-chip mounted on the dielectric substrate 6
The electromagnetic wave leaking from the high-frequency component 4 is opposed to the electromagnetic wave absorber 9 attached to the concave portion 8a of the base 8 through the through hole 6a, so that the electromagnetic wave absorber 9 absorbs the electromagnetic wave.

Accordingly, the millimeter wave module 2 of the present embodiment
According to this, the propagation of the electromagnetic wave between the high-frequency component 4 and the dielectric substrate 6 and between the high-frequency component 4 and the base 8 can be suppressed, and as a result, the isolation between the ports of the high-frequency component 4 can be suppressed. Ration can be improved.

FIG. 4 shows a simulation of an electromagnetic field distribution when a 1-input, 1-output (SPST) MMIC-based high-frequency switch is flip-chip mounted on a dielectric substrate (ceramic substrate made of alumina). The result obtained by the above is shown. However, FIG. 4A shows the case of the conventional configuration without the hole 6a, the concave portion 8a and the radio wave absorber 9, and FIG. 4B shows the present embodiment with the hole 6a, the concave portion 8a and the radio wave absorber 9. And a half portion along the line L formed on the high-frequency switch (MMIC) (the other half is line-symmetric with the result shown). Is shown.

As shown in FIG. 4, the hole 6a and the recess 8
a, It can be seen that the spread S of the electromagnetic wave in the direction orthogonal to the wiring direction of the line L of the high-frequency switch is clearly reduced by providing the radio wave absorber 9. That is,
When the high-frequency component 4 is formed of an SP3T switch having a cross-shaped wiring as in the present embodiment, the state shown in FIG. 4 outputs an input signal from an input port from an output port located in a straight direction. If the spread of the electromagnetic field reaches other non-conducting lines orthogonal to the conducting line, the two lines are electromagnetically coupled, and the isolation deteriorates. It will be lost.

In the millimeter-wave module 2 of the present embodiment, since the radio wave absorber 9 is provided in the concave portion 8a, the occurrence of cavity resonance in the concave portion 8a is also prevented, so that the characteristic deterioration due to the cavity resonance is prevented. Can also be suppressed. Furthermore,
In the present embodiment, the connection between the planar line 5 on the high-frequency component 4 and the planar line 10 on the dielectric substrate 6 is performed using a coplanar line having a ground conductor on the same plane as the signal line conductor. There is no need to provide a special pattern or the like for connecting the ground conductors 5b, 10b of the plane lines 5, 10,
The process steps for manufacturing the high-frequency component 4 and the dielectric substrate 6 can be simplified.

In this embodiment, a concave portion 8a is formed in a base 8 for supporting and fixing the dielectric substrate 6, and a radio wave absorber 9 is mounted in the concave portion 8a.
The structure for disposing the radio wave absorber 9 in opposition to
It can be realized simply and inexpensively. [Second Embodiment] Next, a second embodiment will be described.

The present embodiment is different from the first embodiment only in that the pattern formed on the dielectric substrate 6 is partially different. Therefore, only different portions of this configuration will be described. Here, FIGS. 5A and 5B show only a connection portion between the high-frequency component 4 and the dielectric substrate 6 in the millimeter-wave module 2a of the present embodiment, FIG. 5A is a plan view, FIG. 5B is a bottom view, and FIG. FIG. 9 is a side view showing a relationship between a connection portion and a recess 8a.

In the first embodiment, the ground electrode UG is formed on the entire non-mounting surface of the dielectric substrate 6. However, in the millimeter wave module 2a of the present embodiment, as shown in FIG. The ground electrode UG on the non-mounting surface side of the dielectric substrate 6 is removed from the coupling line section 11 of the coplanar line 10 on 6.

That is, the transmission line portion 12 of the planar line 10 formed on the dielectric substrate 6 has the ground electrode U
The coupling line portion 11 is formed of a coplanar line having no ground electrode UG on the non-mounting surface, whereas the ground line is formed of a ground coplanar line having G.

Further, the line length of the coupling line section 11 is set to about λg / 4, where λg is the in-line wavelength of a signal in the operating frequency band (for example, 77 GHz band). At the same time, the concave portion 8a of the base 8 is sized so that the coupled line portion 11 is exposed in the opening of the concave portion 8a so that the coupled line portion 11 is not electromagnetically coupled to the base 8. ing.

In the millimeter-wave module 2a according to the present embodiment thus configured, the electromagnetic wave propagating through the coupling line section 11 formed on the dielectric substrate 6 is applied to the ground electrode UG on the non-mounting surface.
And the energy is concentrated in the gap between the signal line conductor and the ground conductor on the mounting surface, so that the coupling with the flat line 5 serving as the input / output port of the high-frequency component 4 can be efficiently performed. Instead, since the line length of the coupling line section 11 is set to λg / 4, the impedance between the lines can be matched between the dielectric substrate 6 and the high-frequency component 4.

Therefore, the millimeter wave module 2 of the present embodiment
According to a, in addition to the same effects as those of the first embodiment, the loss and reflection of the signal in the coupling line portion 11 where the bump connection is performed can be reliably reduced, so that the performance of the high frequency component 4 mounted on the flip chip is improved. Can be maximized.

In the present embodiment, the line length of the coupled line section 11 is set to λg / 4, but may be set to an integral multiple of that. Third Embodiment Next, a third embodiment will be described.

The present embodiment is different from the first embodiment only in that the pattern formed on the dielectric substrate 6 is partially different. Therefore, only different portions of this configuration will be described. Here, FIG. 6A is a plan view showing only a connection portion between the high-frequency component 4 and the dielectric substrate 6 in the millimeter wave module 2b of the present embodiment, and FIG. It is an expanded sectional view.

As shown in FIG. 6, in the millimeter-wave module 2b of the present embodiment, the coupling line portion 11 is formed only in a portion facing the high-frequency component 4, and only the line width of the signal line conductor 10a is changed by the coupling line. The signal line conductor 10a and the ground conductor 1 are converted so that the portion 11 is narrower than the transmission line portion 12.
The gap between the transmission line portion 11 and the transmission line portion 12 has the same size. Therefore, the characteristic impedance of the coupling line section 11 is different from that of the transmission line section 12 (other than 50Ω).

Note that the line width of the signal line conductor 10a in the coupling line section 11 is equal to the gap G between the signal line conductor 10a and the ground conductor 10b.
The distance a is set to be smaller than the gap Gb between the high frequency component 4 and the ground conductor 5b. According to the millimeter wave module 2b of the present embodiment configured as described above, when the line width of the signal line conductor 10a is not changed (see FIG. 7), the signal line conductor 10a and the ground conductor 5b on the high frequency component 4 side are used. Can be greatly reduced, and an increase in signal reflection and loss based on the parasitic capacitance can be suppressed.

In the present embodiment, the impedance is mismatched at the coupling line section 11, but the influence of the above-mentioned parasitic width occurs when the line width is not changed because the line length of the coupling line section 11 is short. It is much smaller than the effect of capacity. In the configuration of the present embodiment, the high-frequency component 4 and the dielectric substrate 6 have greatly different dielectric constants, and the signal line conductor of the coplanar line on the dielectric substrate 6 is different from the high-frequency component 4.
The dielectric substrate 6 is larger than the signal line conductor of the coplanar line on the side and has a limit in processing accuracy such as etching.
It can be suitably used when the gap of the upper coplanar line cannot be narrowed any more.

In the present embodiment, the relationship between the gaps Ga and Gb satisfies Ga <Gb by adjusting the line width of the signal line conductor 10a in the coupling line section 11. In addition, the relationship Ga <Gb may be satisfied by adjusting the height of the bump B.

Although some embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and can be implemented in various modes.
For example, in the above embodiment, the hole 6 a is formed in the dielectric substrate 6.
Is formed and only one high-frequency component 4 is mounted on the dielectric substrate 6. However, a plurality of holes 6 a are formed in the dielectric substrate 6, and the plurality of high-frequency components 4 are formed on the dielectric substrate 6. It may be configured to be implemented.

In the above embodiment, the holes 6a of the dielectric substrate 6 are formed by laser processing. However, when a silicon substrate is used as the dielectric substrate, the holes 6a may be formed by etching. Further, in the above embodiment, the concave portion 8a of the base 8 is formed by counterboring a metal piece serving as the base 8, but may be formed by combining a plurality of metal pieces, or may be integrally formed by aluminum die casting or the like. Alternatively, it may be configured by applying a metal plating to a resin injection molded product.

Further, in the above embodiment, the high-frequency component 4
When flip-chip mounting is performed on the dielectric substrate 6, micro bumps made of gold are used, but stud bumps made of solder and underfill for improving connection strength may be used.

[Brief description of the drawings]

FIG. 1 is a perspective view illustrating an entire configuration of a millimeter wave module according to a first embodiment.

FIG. 2 is a schematic diagram illustrating a cross-sectional structure of a millimeter-wave module.

FIG. 3 is an explanatory view showing an assembling procedure of a millimeter wave module.

FIG. 4 is an electromagnetic field distribution diagram which is a simulation result for showing an effect of the millimeter wave module.

FIG. 5 is a plan view, a bottom view, and a side view of a main part of a millimeter wave module according to a second embodiment.

FIG. 6 is a plan view and a cross-sectional view of a main part of a millimeter wave module according to a third embodiment.

FIG. 7 is an explanatory diagram showing a problem of a conventional device.

[Explanation of symbols]

2, 2a, 2b: millimeter wave module, 4: high frequency component,
5, 10 ... plane track (coplanar track), 5a, 10a ...
Signal line conductors, 5b, 10b ground conductor, 6 dielectric substrate, 6a punched hole, 8 base, 8a recess, 9 radio wave absorber, 11 coupling line section, 12 transmission line section, B ... micro bumps, P ... electrode pads, UG ... ground electrodes

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05K 9/00 H05K 9/00 Q F term (Reference) 5E321 AA17 AA31 GG05 GG11 5E336 AA04 AA12 BB02 BC01 BC34 CC31 DD24 DD39 EE05 GG11 5E338 AA02 BB02 BB13 BB17 BB71 BB75 CC02 CC06 CD01 CD14 CD32 EE13 5J014 CA08 CA12 CA22 CA42 CA56

Claims (15)

[Claims] 1. A millimeter-wave module including a dielectric substrate on which a high-frequency component is flip-chip mounted, wherein a hole is formed in the dielectric substrate at a mounting position of the high-frequency component. A millimeter wave module, wherein a radio wave absorber is disposed at a position facing the high-frequency component mounted on the dielectric substrate with the interposition therebetween. 2. A base for fixing and supporting the dielectric substrate by abutting against a mounting surface of the high-frequency component from a non-mounting surface side on the back side, and storing the radio wave absorber in the base. 2. The millimeter wave module according to claim 1, wherein a concave portion is formed. 3. A flat line having a connection end with the high-frequency component is formed on a mounting surface on which the high-frequency component is flip-chip mounted, and a ground electrode is formed on a non-mounting surface on the back side of the mounting surface. A millimeter wave module including a dielectric substrate, wherein the planar line includes a coupling line portion including a portion including the connection end, and a transmission line portion including a portion other than the coupling line portion; Wherein the ground electrode on the non-mounting surface is removed. 4. The millimeter according to claim 3, wherein the line length of the coupling line portion is set to be approximately an integral multiple of λg / 4, where λg is a wavelength in a line of a signal in a used frequency band. Wave module. 5. The millimeter wave module according to claim 3, wherein the coupling line portion is provided only in a portion facing the high-frequency component. 6. A base having conductivity and supporting and fixing the dielectric substrate by abutting the non-mounting surface from the non-mounting surface side, wherein the base has a recess at least in a portion facing the coupling line portion. The millimeter-wave module according to claim 3, wherein: is formed. 7. The millimeter-wave module according to claim 6, wherein the base is made by applying a metal plating to a surface of an injection-molded resin main body. 8. A hole is formed in the dielectric substrate, the hole being opened at a mounting position of the high-frequency component, and the concave portion is formed so as to extend also to a portion facing the hole. 8. The millimeter wave module according to claim 6, wherein a radio wave absorber is housed. 9. The planar line on the dielectric substrate, wherein the coupling line portion is formed of a coplanar line, and the transmission line portion is formed of a ground coplanar line.
A millimeter-wave module according to claim 8. 10. A connection end between the planar line on the dielectric substrate side and the planar line on the high-frequency component side includes a signal line conductor of the planar line on the high-frequency component side and a ground conductor of the planar line on the dielectric substrate side. The distance or the distance between the ground conductor of the high-frequency component-side planar line and the signal line conductor of the dielectric substrate-side planar line is set to be larger than the distance between the signal line conductor and the ground conductor in the same planar line. The millimeter-wave module according to claim 9, wherein: 11. The millimeter-wave module according to claim 10, wherein a distance between the high-frequency component-side flat line and the dielectric substrate-side flat line is adjusted by a height of the bump. 12. The millimeter-wave module according to claim 10, wherein a line width of the planar line on the dielectric substrate side is changed near a connection end with the high-frequency component. 13. The portion where the line width of the dielectric substrate-side planar line is converted, such that the line width changes continuously.
13. A tapered shape.
The described millimeter wave module. 14. The portion where the line width of the dielectric substrate-side planar line is converted has a constant gap between the signal line conductor and the ground conductor. The described millimeter wave module. 15. The millimeter wave module according to claim 3, wherein a micro-bump made of gold is used for bump connection of the high-frequency component.