JP2002050734A - Method of manufacturing semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve connection yield between a bare chip and an interposer substrate and increase reliability, in the manufacture of a semiconductor module by a double-side flip bonding method, using a semiconductor bare chip and a thin-type interposer substrate. SOLUTION: The bare chips 11, 12 are bare-chip bonded on both faces of the interposer substrate 13 so as to manufacture an ultrathin semiconductor module. When mounting the bare chip 11 prior to mounting of the bare chip 12, a backup sheet 21 is interposed between the interposer substrate 13 and a base plate 20, bypassing connection patterns 16 of the interposer substrate 13. Due to the presence of the backup sheet 21, even if an anisotropic conductive film 22 is heated and pressurized when mounting the bare chip 11, the interposer substrate 13 is prevented from arcuate bending.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method of manufacturing a semiconductor module, and more particularly to a method of manufacturing a semiconductor module in which a bare semiconductor chip is mounted on an interposer substrate.

[0002]

2. Description of the Related Art An ultra-thin semiconductor module is formed by mounting semiconductor bare chips on both surfaces of an interposer substrate. Such a semiconductor module is manufactured as shown in FIG. That is, FIG.
The first bare chip 1 is connected to the interposer substrate 3 as shown in FIG.
Mount on top. At this time, the interposer substrate 3 is placed on the base plate 4, and the anisotropic conductive film 5 constituting the connection means is placed thereon. Then, the first bare chip 1 is mounted from above, and the connection pattern 6 of the interposer substrate 3 and the electrodes 7 of the bare chip 1 are connected by the anisotropic conductive film 5 by applying heat and pressure.

When the bare chip 1 is mounted on the surface A of the interposer substrate 3 in this manner, the interposer substrate 3 is turned upside down, that is, turned upside down as shown in FIG. 5B. Thereafter, the bare chip 2 is similarly mounted on the surface on the opposite side of the interposer substrate 3. At this time, the connection between the electrode 7 of the bare chip 2 and the connection pattern 6 of the interposer substrate 3 is also performed by the anisotropic conductive film 5. As a result, as shown in FIG. 5C, an ultra-thin semiconductor module having the bare chips 1 and 2 mounted on both surfaces of the interposer substrate 3 is manufactured.

[0004]

When the bare chips 1 and 2 are mounted on both sides of the interposer substrate 3 as described above, one of the bare chips 1 is first mounted on the flexible interposer substrate 3 via the anisotropic conductive film 5. I do. At this time, heating and pressurization are performed to achieve electrical connection between the connection pattern 6 and the electrode 7 by the anisotropic conductive film 5. Thereafter, the interposer substrate 3 on which the semiconductor bare chip 1 is mounted is inverted, and the semiconductor bare chip 2 having a mirror pattern formed at a position symmetrical to the bare chip 1 is mounted on one surface of the interposer substrate 3 by the anisotropic conductive film 5. . Thus, a semiconductor module in which the bare chip 1 is flip-chip mounted on both surfaces of the thin interposer substrate 3 is completed.

[0005] Here, the interposer substrate 3 is deformed by the heating and pressurization during the mounting of the bare chip 1 previously mounted on the interposer substrate 3 so that the upper surface becomes concave as shown by a chain line in FIG. 5A. This is because there is a gap between the base plate 4 and the interposer substrate 3 between the wiring patterns 6 on the lower surface of the interposer substrate 3. Such a gap causes a deformation of, for example, about 10 μm.

In this manner, the interposer substrate 3 has its bare chip 2
5B, the state shown in FIG. 5B is obtained, and the contact at the intermediate position of the opposite bare chip 2 is strengthened.
The load on the peripheral side, that is, on the electrode 7 of the bare chip 2 is reduced. Due to such a decrease in the amount of load at the time of pressurization, the connecting particles present in the anisotropic conductive film 5 are not completely crushed, and thus the electrodes 7 of the bare chip 2 and the connection pattern 6 of the interposer substrate 3 are particularly hardly crushed. Connection yield decreases, and reliability decreases. In addition, this leads to a decrease in the yield of semiconductor module production.

SUMMARY OF THE INVENTION The present invention has been made in view of such a problem, and is intended to reliably connect the electrodes of a bare chip to an interposer substrate, improve the connection yield, and improve the reliability. An object of the present invention is to provide a method for manufacturing a semiconductor module.

[0008]

According to one aspect of the present invention, there is provided a method of manufacturing a semiconductor module in which a bare semiconductor chip is mounted on an interposer substrate, wherein the interposer substrate is mounted on a base plate and the interposer substrate is mounted on the base plate. A method for manufacturing a semiconductor module, comprising: receiving a lower surface and an intermediate portion thereof by a backup means, arranging a bare semiconductor chip on the interposer substrate via a pressure-sensitive connecting means, and applying pressure to the interposer substrate. It is about.

[0009] Here, the backup means may be constituted by a sheet-like member which fills a gap between the interposer substrate and the base plate. Further, the backup means may be formed of a sheet-like member that fills a gap between the interposer substrate and the base plate between the wiring patterns of the interposer substrate.

Another aspect of the present invention is a method of manufacturing a semiconductor module in which semiconductor bare chips are mounted on both surfaces of an interposer substrate via pressure-sensitive connecting means, respectively. The present invention relates to a method for manufacturing a semiconductor module, wherein when mounting a semiconductor bare chip, a surface of the interposer substrate opposite to the mounting surface of the bare chip and an intermediate portion thereof is received by backup means. is there.

Here, the connection pattern of the interposer substrate and the electrode of the semiconductor bare chip may be electrically connected by an anisotropic conductive film. The semiconductor bare chip may be pressurized and heated to be mounted on the interposer substrate when the connection is made by the anisotropic conductive film.

In a preferred embodiment of the present invention, when a bare semiconductor chip is mounted on both sides of a thin double-sided interposer substrate to produce an ultra-thin semiconductor module, the bare chip is first mounted on the opposite side of the interposer substrate. The portion between the patterns on the side surface is backed up by backup means, thereby preventing the interposer substrate from deforming into an arc shape when connecting the electrodes of the bare chip by heating and pressing using an anisotropic conductive film. This is to prevent it.

As described above, the first method for the interposer substrate is performed.
When the intermediate portion of the interposer substrate is received by the backup means during the mounting of the bare chip, the bow of the interposer substrate is deformed, that is, the warp is reduced, so that the overall height in the multi-stack mounting is minimized. . Also, since the warpage of the interposer substrate after the mounting of the first bare chip is reduced, when the second bare chip is mounted on the opposite trailing surface, the interposition between the intermediate surface portion of the second bare chip and the interposer substrate is reduced. The gap between them does not become narrow, and the second bare chip sandwiches the anisotropic conductive film at a substantially uniform distance from the interposer substrate. Therefore, when heating and pressurization are performed in such a state, the electrodes of the second bare chip are correctly connected to the corresponding connection patterns of the interposer substrate, and the connection yield particularly when mounting the second bare chip is reduced. Dramatically improved, reliability will be greatly improved. In addition, the yield of the semiconductor module is improved and the reliability is improved, so that the cost of the semiconductor module is reduced.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to an embodiment shown in the drawings. FIG. 1 sequentially describes a method for manufacturing a semiconductor module according to an embodiment of the present invention. Here, as shown in FIG. 1C, the bare chips 11 and 12 are mounted on the upper surface and the lower surface of the interposer substrate 13 as shown in FIG. 1C, thereby forming an ultra-thin semiconductor module.

When manufacturing such a semiconductor module, the interposer substrate 13 is mounted on the base plate 20, as shown in FIG. 1C. At this time, the backup sheet 21 is placed on the base plate 20 in advance. The backup sheet 21 is the interposer substrate 13
May be a sheet-like body having substantially the same thickness as that of the connection pattern 16, and is made of a thin stainless steel plate or ceramic plate. That is, a sheet made of a hard material is used. Such a sheet-like body 21 is disposed between the connection patterns 16 of the interposer substrate 13 so that the base plate 2
It is arranged so as to eliminate a gap in the height direction between the zero and the interposer substrate 13.

The bare chip 1 is placed on the interposer substrate 13.
An anisotropic conductive film 22 having a dimension slightly larger than 1 is provided. Then, the first bare chip 11 is mounted on such an anisotropic conductive film 22, and heating and pressurization are performed from above. By such pressurizing and heating steps, the electrodes 15 of the bare chip 11 and the connection patterns 16 of the interposer substrate 13 are electrically connected to each other.

The bare chip 1 made of the anisotropic conductive film 22
Connection pattern 1 between the first electrode 15 and the interposer substrate 13
At the time of the pressurizing and heating steps for connection with 6, the cross section of the interposer substrate 13 does not deform into an arc shape. This is because the portion between the connection patterns 16 on the lower surface of the interposer substrate 13 is received by the backup sheet 21. Therefore, the interposer substrate 13 on which the first bare chip 11 is mounted is flat and has a straight cross section as shown in FIG. 1A.

Next, the interposer substrate 13 is inverted and turned over as shown in FIG. 1B. Then, the anisotropic conductive film 22 is placed on the interposer substrate 13, and the bare chip 12 is mounted thereon. Here, heating and pressurization are performed from above the bare chip 12 as well. Through such a process, the electrodes 15 of the bare chip 12 and the connection patterns 16 of the interposer substrate 13 are connected by the anisotropic conductive film 22. As a result, as shown in FIG. 1C, an ultra-thin semiconductor module in which bare chips 11 and 12 are mounted on both surfaces of the interposer substrate 13, respectively, is produced.

Here, since the interposer substrate 13 after mounting the first bare chip 11 hardly warps, the belly portion or the middle portion of the bare chip 12 mounted on the opposite surface is heated and pressurized. The contact does not become strong at the time of
5 is reliably connected to the interposer substrate 13, thereby dramatically improving the connection yield and greatly improving the reliability. This also improves the yield of semiconductor modules and reduces costs. In addition, the reliability of the semiconductor module itself is improved. Further, such a semiconductor module is provided with an intermediate interposer substrate 13.
Does not warp, it is possible to minimize the total height of the mounting when stacking in multiple stages, and a thinner semiconductor module is provided.

The anisotropic conductive film 22 for connecting the electrodes 15 of the bare chips 11 and 12 to the connection pattern 16 of the interposer substrate 13 is made of a matrix resin such as an epoxy resin as shown in FIG. The resin particles 26 are dispersed therein. Here, each resin particle 26 has a spherical shape as shown in FIG.
A metal layer 27 made of metal plating is formed on the outer peripheral portion, and an insulating coating 28 is formed so as to cover the outer peripheral surface.

When heating and pressurization are performed with the anisotropic conductive film 22 interposed between the bare chips 11 and 12 and the interposer substrate 13, as shown in FIG.
The resin particles 26 are crushed by the heights of the electrodes 25 and the connection patterns 16 between the electrodes and the connection patterns 16, the outer insulating coating 28 is broken, and the metal layer 27 is exposed. Electrical connection between the electrode 15 and the connection pattern 16 is achieved. On the other hand, in a region where the electrode 15 and the connection pattern 16 do not exist, the bare chips 11 and 12 and the interposer substrate 1
3, the resin particles 26 maintain the spherical shape as they are, and short circuit is prevented by the insulating coating 28 on the outer peripheral surface. That is, conduction in a region other than the electrode 16 is prevented, thereby achieving a selective electrical connection.

As described above, in the present embodiment, the bare chip 11 is mounted on the flexible interposer substrate 13 with the anisotropic conductive film 22. At this time, the intermediate portion of the interposer substrate 13 is received by the backup sheet 21, and a pressing pressure load is applied to the anisotropic conductive film 2.
2 is evenly received. Then, the interposer substrate 13 on which the bare chip 11 is mounted on one surface is inverted, and the bare chip 12 is mounted on the symmetrical opposite surface by the anisotropic conductive film 22.

Accordingly, since the warp of the interposer substrate 13 is reduced particularly by the backup sheet 21, the connection pattern between the electrode 15 of the bare chip 12 and the interposer substrate 13 at the time of mounting the bare chip 12 on the opposite trailing surface is opposite. The connection yield with the semiconductor module 16 is greatly improved, the reliability is improved, and the cost of the semiconductor module is reduced.

Although the invention of the present application has been described with reference to the illustrated embodiments, the invention included in the present application is not limited to the above embodiments, and various modifications may be made within the technical idea of each invention of the present application. Is possible. For example, in the above-described embodiment, the backup sheet 21 disposed on the base plate 20 is used as the backup means, but instead of such a configuration, the surface on which the bare chip 11 of the interposer substrate 13 is mounted is described. Backup means made of a dummy pattern may be provided on the opposite surface.

[0025]

According to one aspect of the present invention, there is provided a method for manufacturing a semiconductor module in which a semiconductor bare chip is mounted on an interposer substrate, wherein the interposer substrate is mounted on a base plate and the lower surface of the interposer substrate is provided. The intermediate portion is received by the backup means, and a semiconductor bare chip is arranged on the interposer substrate via the pressure-sensitive connection means to press the interposer substrate.

Therefore, according to such a method of manufacturing a semiconductor module, even when a bare chip is placed and pressed against the interposer substrate, the intermediate portion of the interposer substrate is not deformed into an arc shape so as to be depressed. Therefore, it is possible to minimize the total height when mounting the multi-stage stack.

Another invention of the present application is directed to a method of manufacturing a semiconductor module in which semiconductor bare chips are mounted on both surfaces of an interposer substrate via pressure-sensitive connecting means, respectively, wherein a first semiconductor is mounted on one surface of the interposer substrate. When the bare chip is mounted, the surface of the interposer substrate opposite to the surface on which the bare chip is mounted and an intermediate portion thereof is received by the backup means.

Therefore, according to such a method of manufacturing a semiconductor module, the intermediate portion of the interposer substrate is depressed even if a pressing force is applied to achieve connection when mounting the first semiconductor bare chip on one surface. Such deformation is prevented. Therefore, when another bare chip is mounted on the opposite surface of the interposer substrate thereafter, the contact of the intermediate portion of the other bare chip, that is, the antinode portion, becomes strong, and the load on the peripheral electrodes is reduced. Thus, the yield of connection of bare chips mounted later is remarkably improved, and reliability is improved.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view illustrating a method for manufacturing a semiconductor module of one embodiment.

FIG. 2 is an enlarged sectional view of an anisotropic conductive film.

FIG. 3 is an enlarged longitudinal sectional view of resin particles dispersed in an anisotropic conductive film.

FIG. 4 is an enlarged sectional view showing an operation of electrical connection by an anisotropic conductive film.

FIG. 5 is a longitudinal sectional view showing a conventional method for manufacturing a semiconductor module.

[Explanation of symbols]

1, 2 ‥‥ bare chip, 3 ‥‥ interposer board, 4 ‥
{Base plate, 5} Anisotropic conductive film, 6} Connection pattern, 7} Electrode, 11, 12} Bare chip, 13
{Interposer substrate, 15} Electrode, 16} Connection pattern, 20} Base plate, 21} Backup sheet, 22} Anisotropic conductive film, 26} Resin particles,
27 ‥‥ metal layer, 28 ‥‥ insulation coating

Claims (6)

[Claims] 1. A method of manufacturing a semiconductor module in which a semiconductor bare chip is mounted on an interposer substrate, wherein the interposer substrate is mounted on a base plate, and a lower portion of the interposer substrate and an intermediate portion thereof are backed up. A semiconductor bare chip is disposed on the interposer substrate via a pressure-sensitive connecting means, and pressure is applied to the interposer substrate. 2. The method of manufacturing a semiconductor module according to claim 1, wherein said backup means comprises a sheet-like member which fills a gap between said interposer substrate and said base plate. 3. The semiconductor module according to claim 1, wherein said backup means comprises a sheet-like member which fills a gap between said interposer substrate and said base plate between wiring patterns of said interposer substrate. Manufacturing method. 4. A method for manufacturing a semiconductor module, wherein semiconductor bare chips are mounted on both surfaces of an interposer substrate via pressure-sensitive connection means, respectively. A first semiconductor bare chip is mounted on one surface of the interposer substrate. A method of manufacturing the semiconductor module, wherein an intermediate portion of the interposer substrate opposite to the surface on which the bare chip is mounted is received by backup means. 5. The method according to claim 4, wherein the connection pattern of the interposer substrate and the electrode of the bare semiconductor chip are electrically connected by an anisotropic conductive film. 6. The semiconductor module according to claim 4, wherein said semiconductor bare chip is pressed and heated to be mounted on said interposer substrate when connection is made by said anisotropic conductive film. Production method.