|
WO2001045182A1
(en)
*
|
1999-12-17 |
2001-06-21 |
Institute Of Materials Research & Engineering |
Improved transparent electrode material for quality enhancement of oled devices
|
|
JP3826755B2
(ja)
*
|
2001-09-28 |
2006-09-27 |
株式会社村田製作所 |
ＺｎＯ膜及びその製造方法並びに発光素子
|
|
JP2004017994A
(ja)
*
|
2002-06-13 |
2004-01-22 |
Thermos Kk |
断熱容器およびその製造方法
|
|
TW589672B
(en)
*
|
2002-12-31 |
2004-06-01 |
Ind Tech Res Inst |
Method of manufacturing p-type transparent conductive film and its system
|
|
US7786550B2
(en)
|
2003-03-06 |
2010-08-31 |
Panasonic Corporation |
P-type semiconductor and semiconductor hetero material and manufacturing methods thereof
|
|
KR100571818B1
(ko)
*
|
2003-10-08 |
2006-04-17 |
삼성전자주식회사 |
질화물계 발광소자 및 그 제조방법
|
|
US7061026B2
(en)
*
|
2004-04-16 |
2006-06-13 |
Arima Optoelectronics Corp. |
High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer
|
|
KR101004981B1
(ko)
*
|
2005-06-28 |
2011-01-04 |
제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 |
산화갈륨-산화아연계 스퍼터링 타겟, 투명 도전막의 형성방법 및 투명 도전막
|
|
US7686985B2
(en)
*
|
2005-06-28 |
2010-03-30 |
Nippon Mining & Metals Co., Ltd |
Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film, and transparent conductive film
|
|
WO2007020729A1
(ja)
*
|
2005-08-18 |
2007-02-22 |
Yamanashi University |
酸化亜鉛薄膜の製造方法及び製造装置
|
|
CN101326304B
(zh)
*
|
2005-12-08 |
2011-05-04 |
Jx日矿日石金属株式会社 |
氧化镓-氧化锌类溅射靶、透明导电膜及其形成方法
|
|
CN101405427B
(zh)
*
|
2006-03-17 |
2012-07-18 |
Jx日矿日石金属株式会社 |
氧化锌系透明导体以及该透明导体形成用溅射靶
|
|
CN101490766B
(zh)
*
|
2006-08-24 |
2011-11-30 |
Jx日矿日石金属株式会社 |
氧化锌系透明导体、溅射靶以及该溅射靶的制造方法
|
|
MX2009002182A
(es)
*
|
2006-08-29 |
2009-04-22 |
Pilkington Group Ltd |
Metodo de fabricacion de recubrimientos de oxido de zinc impurificado de baja resistividad y articulos formados mediante el mismo.
|
|
US8835756B2
(en)
*
|
2006-12-21 |
2014-09-16 |
Rutgers, The State University Of New Jersey |
Zinc oxide photoelectrodes and methods of fabrication
|
|
US8747630B2
(en)
|
2007-01-16 |
2014-06-10 |
Alliance For Sustainable Energy, Llc |
Transparent conducting oxides and production thereof
|
|
JP4808682B2
(ja)
*
|
2007-08-03 |
2011-11-02 |
Ｊｘ日鉱日石金属株式会社 |
焼結体、透明導電膜の製造方法及び透明導電膜
|
|
US8253012B2
(en)
*
|
2008-03-17 |
2012-08-28 |
Alliance For Sustainable Energy, Llc |
High quality transparent conducting oxide thin films
|
|
WO2010151430A1
(en)
|
2009-06-22 |
2010-12-29 |
Arkema Inc. |
Chemical vapor deposition using n,o polydentate ligand complexes of metals
|
|
MX2012002156A
(es)
*
|
2009-08-24 |
2012-04-02 |
First Solar Inc |
Oxido conductor transparente impurificado.
|
|
US8546797B2
(en)
|
2009-10-20 |
2013-10-01 |
Stanley Electric Co., Ltd. |
Zinc oxide based compound semiconductor device
|
|
JP5451320B2
(ja)
*
|
2009-10-30 |
2014-03-26 |
スタンレー電気株式会社 |
ＺｎＯ系化合物半導体素子
|
|
US20120024360A1
(en)
*
|
2010-07-28 |
2012-02-02 |
General Electric Company |
Photovoltaic device
|
|
WO2013119550A1
(en)
|
2012-02-10 |
2013-08-15 |
Alliance For Sustainable Energy, Llc |
Thin film photovoltaic devices with a minimally conductive buffer layer
|
|
WO2014077895A1
(en)
|
2012-11-19 |
2014-05-22 |
Alliance For Sustainable Energy, Llc |
Devices and methods featuring the addition of refractory metals to contact interface layers
|