JP2002043650A - Magnetic impedance effect element - Google Patents
Magnetic impedance effect elementInfo
- Publication number
- JP2002043650A JP2002043650A JP2000226235A JP2000226235A JP2002043650A JP 2002043650 A JP2002043650 A JP 2002043650A JP 2000226235 A JP2000226235 A JP 2000226235A JP 2000226235 A JP2000226235 A JP 2000226235A JP 2002043650 A JP2002043650 A JP 2002043650A
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- JP
- Japan
- Prior art keywords
- magnetic
- thin film
- marker
- effect element
- magneto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Measuring Magnetic Variables (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁気インピーダン
ス効果を利用して外部磁界を検出する磁気インピーダン
ス効果素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magneto-impedance effect element for detecting an external magnetic field using a magneto-impedance effect.
【０００２】[0002]
【従来の技術】図１３は、この種の磁気インピーダンス
効果素子の従来技術を説明するためのものであり、この
磁気インピーダンス効果素子１１は、高い透磁率を有す
る帯状の磁性薄膜１３が形成された非磁性基板１２上
に、磁性薄膜１３にバイアス磁界を磁性薄膜１３の長手
方向に沿った矢印Ｂ方向に付与するバイアス磁界付与手
段としての、ＣｏＰｔ系合金、ＣｏＣｒＰｔ系合金等の
導電性の硬磁性体で形成された導電硬磁性膜１４が非磁
性絶縁膜１５を介して磁性薄膜１３を被覆するように固
着され、磁性薄膜１３の両端部に一対の電極１６，１７
が設けられた構造となっており、磁性薄膜１３には、そ
の膜面内で磁化容易軸の方向が磁性薄膜１３の長手方向
に対して垂直となるように、磁性薄膜１３の幅方向（短
手方向）に誘導磁気異方性が付与されている。2. Description of the Related Art FIG. 13 is a view for explaining the prior art of this type of magneto-impedance effect element. In this magneto-impedance effect element 11, a strip-shaped magnetic thin film 13 having a high magnetic permeability is formed. A conductive hard magnetic material such as a CoPt-based alloy or a CoCrPt-based alloy as a bias magnetic field applying means for applying a bias magnetic field to the magnetic thin film 13 in the direction of arrow B along the longitudinal direction of the magnetic thin film 13 on the nonmagnetic substrate 12 A conductive hard magnetic film 14 formed of a body is fixed so as to cover the magnetic thin film 13 via a non-magnetic insulating film 15, and a pair of electrodes 16 and 17 are provided on both ends of the magnetic thin film 13.
The magnetic thin film 13 has a structure in which the direction of the axis of easy magnetization is perpendicular to the longitudinal direction of the magnetic thin film 13 in the film plane. Induced magnetic anisotropy is provided in the hand direction).
【０００３】そして、この磁気インピーダンス効果素子
１１は、磁性薄膜１３の長手方向が図示せぬ被検知体か
ら矢印Ｈ方向に発せられる外部磁界に沿うように配置さ
れて、バイアス磁界の方向（矢印Ｂ方向）が外部磁界の
方向（矢印Ｈ方向）に対して所定の向きとなるように合
わせ込まれた状態で、一対の電極１６，１７を介して磁
性薄膜１３にＭＨｚ帯域の高周波電流を通電すると、磁
性薄膜１３の長手方向両端部間のインピーダンスが変化
し、この変化を電気信号に変換して外部磁界の検出出力
が得られるようになっている。The magneto-impedance effect element 11 is arranged so that the longitudinal direction of the magnetic thin film 13 is along the external magnetic field emitted from a detection object (not shown) in the direction of arrow H, and the direction of the bias magnetic field (arrow B). When a high-frequency current in the MHz band is applied to the magnetic thin film 13 via the pair of electrodes 16 and 17 in a state where the direction is adjusted so as to be a predetermined direction with respect to the direction of the external magnetic field (the direction of the arrow H). The impedance between the two ends in the longitudinal direction of the magnetic thin film 13 changes, and this change is converted into an electric signal to obtain a detection output of an external magnetic field.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上述し
た従来の磁気インピーダンス効果素子１１にあっては、
外観から導電硬磁性膜１４のバイアス磁界付与方向（矢
印Ｂ方向）を視認することができないため、このバイア
ス磁界付与方向が外部磁界の方向（矢印Ｈ方向）に対し
て所定の向きとなるように磁気インピーダンス効果素子
１１を配置する作業は、導電硬磁性膜１４のバイアス磁
界付与方向を磁気測定器によって確認する作業を伴う極
めて煩雑なものとなっていた。However, in the conventional magneto-impedance effect element 11 described above,
Since the bias magnetic field application direction (arrow B direction) of the conductive hard magnetic film 14 cannot be visually recognized from the external appearance, the bias magnetic field application direction is set to a predetermined direction with respect to the external magnetic field direction (arrow H direction). The work of arranging the magneto-impedance effect element 11 has been extremely complicated with the work of confirming the direction of applying the bias magnetic field of the conductive hard magnetic film 14 with a magnetometer.
【０００５】また、バイアス磁界付与手段を導線コイル
で代替した場合には電流の印加方向を確認する形となっ
て現れ、この確認作業は導電硬磁性膜１４のそれと比較
して若干簡単にはなるものの導電硬磁性膜１４を用いた
場合と同様の問題を有している。When the bias magnetic field applying means is replaced with a conducting wire coil, the direction in which the current is applied appears, and this operation is slightly simpler than that of the conductive hard magnetic film 14. However, it has the same problem as when the conductive hard magnetic film 14 is used.
【０００６】本発明は、上述した従来技術の事情に鑑み
てなされたもので、その目的は、バイアス磁界の方向が
外部磁界の方向に対して所定の向きとなるように容易に
配置することが可能な磁気インピーダンス効果素子を提
供することにある。The present invention has been made in view of the above-mentioned circumstances of the prior art, and has as its object to easily arrange a bias magnetic field so that the direction of the bias magnetic field becomes a predetermined direction with respect to the direction of an external magnetic field. It is to provide a possible magneto-impedance effect element.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、本発明の磁気インピーダンス効果素子は、高周波電
流を通電して外部磁界によりインピーダンスの変化を発
生する磁性薄膜と、この磁性薄膜にバイアス磁界を付与
するバイアス磁界付与手段とを備え、前記バイアス磁界
の付与方向を表示するマーカを設けたことを最も主要な
特徴としている。In order to achieve the above-mentioned object, a magneto-impedance effect element according to the present invention comprises a magnetic thin film for generating a change in impedance due to an external magnetic field when a high-frequency current is applied, and a bias applied to the magnetic thin film. The most main feature of the present invention is that a bias magnetic field applying means for applying a magnetic field is provided, and a marker for indicating a direction in which the bias magnetic field is applied is provided.
【０００８】また、上記構成において、前記バイアス磁
界付与手段は前記磁性薄膜の長手方向に前記バイアス磁
界を付与する硬磁性体で構成されて前記磁性薄膜が形成
された非磁性基板上に非磁性絶縁膜を介して前記磁性薄
膜を被覆するように設けられ、前記磁性薄膜の長手方向
両端部にはそれぞれ電極が設けられている構成とした。In the above structure, the bias magnetic field applying means is made of a hard magnetic material for applying the bias magnetic field in the longitudinal direction of the magnetic thin film, and is provided on a nonmagnetic substrate on which the magnetic thin film is formed. The magnetic thin film is provided so as to cover the magnetic thin film via a film, and electrodes are provided at both ends in the longitudinal direction of the magnetic thin film.
【０００９】また、上記構成において、前記マーカが前
記磁性薄膜、前記硬磁性体、前記非磁性絶縁膜、前記非
磁性基板及び前記電極の何れかに一体的に設けられてい
る構成とした。In the above configuration, the marker is provided integrally with any one of the magnetic thin film, the hard magnetic material, the nonmagnetic insulating film, the nonmagnetic substrate, and the electrode.
【００１０】また、上記構成において、前記磁性薄膜、
前記硬磁性体、前記非磁性絶縁膜、前記非磁性基板及び
前記電極の何れかの一部を延設させて前記マーカとした
構成とした。In the above structure, the magnetic thin film,
Any one of the hard magnetic material, the non-magnetic insulating film, the non-magnetic substrate, and the electrode is extended to serve as the marker.
【００１１】また、上記構成において、前記磁性薄膜、
前記硬磁性体、前記非磁性絶縁膜、前記非磁性基板及び
前記電極の何れかに切欠部を設け、この切欠部を前記マ
ーカとした構成とした。In the above structure, the magnetic thin film may include:
A notch is provided in any of the hard magnetic material, the nonmagnetic insulating film, the nonmagnetic substrate, and the electrode, and the notch is used as the marker.
【００１２】また、上記構成において、前記マーカを前
記磁性薄膜、前記硬磁性体、前記非磁性絶縁膜、前記非
磁性基板及び前記電極とは別体で構成し、前記マーカが
前記非磁性絶縁膜あるいは前記電極と同一材料にて形成
されて前記電極の近傍に配設されている構成とした。In the above structure, the marker is formed separately from the magnetic thin film, the hard magnetic material, the nonmagnetic insulating film, the nonmagnetic substrate, and the electrode, and the marker is formed of the nonmagnetic insulating film. Alternatively, it is configured to be formed of the same material as the electrode and disposed near the electrode.
【００１３】[0013]
【発明の実施の形態】以下、本発明の磁気インピーダン
ス効果素子の第１の実施形態を図１乃至２に基づいて説
明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of a magneto-impedance effect element according to the present invention will be described with reference to FIGS.
【００１４】この磁気インピーダンス効果素子１は、高
い透磁率を有する帯状の磁性薄膜３が形成された非磁性
基板２に、導電硬磁性膜４が非磁性絶縁膜５を介して固
着され、磁性薄膜３の両端部に一対の電極６，７が設け
られた構造となっている。In the magneto-impedance effect element 1, a conductive hard magnetic film 4 is fixed via a non-magnetic insulating film 5 to a non-magnetic substrate 2 on which a strip-shaped magnetic thin film 3 having high magnetic permeability is formed. 3 has a structure in which a pair of electrodes 6 and 7 are provided at both ends.
【００１５】非磁性基板２は、Ａｌ2Ｏ3−ＴｉＣセラミ
ック等の絶縁性を有する非磁性材料を矩形状に成形して
なるものである。The non-magnetic substrate 2 is formed by molding a non-magnetic material having an insulating property such as Al 2 O 3 —TiC ceramic into a rectangular shape.
【００１６】磁性薄膜３は、ＦｅＨｆＣを含みｂｃｃ構
造のＦｅ微結晶粒子とＨｆＣの微結晶粒子とを主体とす
る軟磁性薄膜であって、その膜面内で磁化容易軸の方向
が磁性薄膜３の長手方向に対して垂直となるように、磁
性薄膜３の幅方向（短手方向）に誘導磁気異方性が付与
されている。The magnetic thin film 3 is a soft magnetic thin film containing FeHfC and mainly composed of microcrystalline particles of Fe having a bcc structure and microcrystalline particles of HfC. The direction of the axis of easy magnetization in the film plane is the magnetic thin film 3. Induced magnetic anisotropy is provided in the width direction (transverse direction) of the magnetic thin film 3 so as to be perpendicular to the longitudinal direction of the magnetic thin film 3.
【００１７】導電硬磁性膜４は、磁性薄膜３にバイアス
磁界を磁性薄膜３の長手方向に沿った矢印Ｂ方向に付与
するバイアス磁界付与手段であって、ＣｏＰｔ系合金あ
るいはＣｏＣｒＰｔ系合金等導電性の硬磁性体の何れか
１種で形成されて磁性薄膜３上に配置されている。The conductive hard magnetic film 4 is a bias magnetic field applying means for applying a bias magnetic field to the magnetic thin film 3 in a direction indicated by an arrow B along the longitudinal direction of the magnetic thin film 3, and is made of a conductive material such as a CoPt alloy or a CoCrPt alloy. And is disposed on the magnetic thin film 3.
【００１８】非磁性絶縁膜５は、導電硬磁性膜４を磁性
薄膜３から絶縁するためのもので、ＳｉＯ2やＡｌ2Ｏ3
等の非磁性絶縁物からなり、非磁性基板２上に各電極
６，７の一部分を被覆するように形成されて導電硬磁性
膜４と磁性薄膜３との間に配置されている。The non-magnetic insulating film 5 is for insulating the conductive hard magnetic film 4 from the magnetic thin film 3 and is made of SiO 2 or Al 2 O 3.
And is formed on the non-magnetic substrate 2 so as to cover a part of each of the electrodes 6 and 7 and is disposed between the conductive hard magnetic film 4 and the magnetic thin film 3.
【００１９】一対の電極６，７は、Ａｕ，Ｗ，Ｃｒ，Ｔ
ａ等の電気抵抗の小さい非磁性導電膜からなり、硬磁性
膜４を挟むように配置されて、バイアス磁界付与方向
（矢印Ｂ方向）に位置する一方の電極６には、その一部
分を延長させてマーカ８が一体的に形成されている。こ
のため、マーカ８は、一対の電極６，７を形成する製造
工程で同時に作り込むことができ、手数を要することな
く簡単に形成できるという特徴を有している。Au, W, Cr, T
The one electrode 6 which is made of a non-magnetic conductive film having a small electric resistance such as a and is disposed so as to sandwich the hard magnetic film 4 and is located in the bias magnetic field applying direction (the direction of arrow B) has a part extended. Thus, the marker 8 is integrally formed. For this reason, the marker 8 can be formed simultaneously in the manufacturing process of forming the pair of electrodes 6 and 7, and has a characteristic that it can be easily formed without requiring any trouble.
【００２０】このように構成された磁気インピーダンス
効果素子１は、磁性薄膜３の長手方向が図示せぬ被検知
体から矢印Ｈ方向に発せられる外部磁界に沿うように配
置されて、バイアス磁界の方向（矢印Ｂ方向）が外部磁
界の方向（矢印Ｈ方向）に対して所定の向きとなるよう
に合わせ込まれた状態で、一対の電極６，７を介して磁
性薄膜３にＭＨｚ帯域の高周波電流を通電すると、磁性
薄膜３の長手方向両端部間のインピーダンスが変化し、
この変化を電気信号に変換して外部磁界の検出出力が得
られるようになっている。The magneto-impedance effect element 1 constructed as described above is arranged so that the longitudinal direction of the magnetic thin film 3 is arranged along an external magnetic field emitted in the direction of arrow H from a not-shown object, and the direction of the bias magnetic field. The high-frequency current in the MHz band is applied to the magnetic thin film 3 via the pair of electrodes 6 and 7 in a state where the (arrow B direction) is aligned so as to be in a predetermined direction with respect to the direction of the external magnetic field (arrow H direction). , The impedance between both ends in the longitudinal direction of the magnetic thin film 3 changes,
This change is converted into an electric signal, and a detection output of the external magnetic field is obtained.
【００２１】そして、バイアス磁界付与方向（矢印Ｂ方
向）をその方向に配置されたマーカ８によって容易に視
認することができるため、従来技術で述べた如きバイア
ス磁界付与方向を磁気測定器によって確認する作業を排
除することができ、バイアス磁界付与方向（矢印Ｂ方
向）が外部磁界の方向（矢印Ｈ方向）に対して所定の向
きとなるように磁気インピーダンス効果素子１を配置す
る作業の煩雑さが解消できる。Since the direction of applying the bias magnetic field (the direction of arrow B) can be easily visually recognized by the marker 8 arranged in that direction, the direction of applying the bias magnetic field as described in the prior art is confirmed by a magnetometer. The operation can be eliminated, and the work of arranging the magneto-impedance effect element 1 such that the bias magnetic field applying direction (the direction of the arrow B) is in a predetermined direction with respect to the direction of the external magnetic field (the direction of the arrow H) is reduced. Can be resolved.
【００２２】尚、この第１の実施形態では、バイアス磁
界付与方向（矢印Ｂ方向）に位置する一方の電極６の一
部分を延長させてマーカ８を形成したもので説明した
が、本発明はこれに限定されるものではなく、図３に示
すように、非磁性基板２のバイアス磁界付与方向の端部
を延設させてマーカ８としたり、図４に示すように、磁
性薄膜３のバイアス磁界付与方向の端部を延設させてマ
ーカ８としたり、あるいは、図５に示すように、非磁性
絶縁膜５のバイアス磁界付与方向の角部を延設させてマ
ーカ８としたり、図６に示すように、導電硬磁性膜４の
バイアス磁界付与方向の角部を延設させてマーカ８とし
た構成としてもよく、このようにしても、バイアス磁界
付与方向（矢印Ｂ方向）をその方向に配置されたマーカ
８によって容易に視認することができ、また、非磁性基
板２、磁性薄膜３、非磁性絶縁膜５及び導電硬磁性膜４
を形成する各々の製造工程でマーカ８を同時に作り込む
ことができる。In the first embodiment, the marker 8 is formed by extending a part of one of the electrodes 6 located in the bias magnetic field applying direction (the direction of arrow B). However, as shown in FIG. 3, the end of the non-magnetic substrate 2 in the direction of applying the bias magnetic field is extended to serve as a marker 8, or as shown in FIG. The marker 8 may be formed by extending the end in the application direction, or may be formed by extending the corner of the non-magnetic insulating film 5 in the direction of applying the bias magnetic field, as shown in FIG. As shown, the conductive hard magnetic film 4 may have a configuration in which a corner in the direction of applying a bias magnetic field is extended to serve as a marker 8, and in this case, the direction of applying a bias magnetic field (the direction of arrow B) is set in that direction. Easy to see with the placed marker 8 It can be, also, the non-magnetic substrate 2, a magnetic thin film 3, a nonmagnetic insulating layer 5 and the conductive hard magnetic film 4
Can be simultaneously formed in each of the manufacturing steps for forming the marker.
【００２３】また、バイアス磁界付与手段に導電硬磁性
膜４を用いたが、この他にバイアス磁界付与手段にはフ
ェライト磁石等の絶縁性の硬磁性体や液体急冷法により
得られるＲＦｅＢＭ系薄帯（薄板）磁石（ＲはＹを含む
希土類元素のうちの１種または２種以上の元素、ＭはＺ
ｒ，Ｎｂ，Ｔａ，Ｈｆより選ばれる１種または２種以上
の元素）や導電コイルで代替する等の種々の変更が可能
である。The conductive hard magnetic film 4 is used for the bias magnetic field applying means. In addition, an insulating hard magnetic material such as a ferrite magnet or an RFeBM-based thin ribbon obtained by a liquid quenching method may be used for the bias magnetic field applying means. (Thin plate) magnet (R is one or more of rare earth elements including Y, M is Z
Various changes are possible, such as substitution with one or more elements selected from r, Nb, Ta, and Hf) and a conductive coil.
【００２４】次に、本発明の磁気インピーダンス効果素
子の第２の実施形態を図７に基づいて説明する。Next, a second embodiment of the magneto-impedance effect element of the present invention will be described with reference to FIG.
【００２５】この第２の実施形態の磁気インピーダンス
効果素子９が第１の実施形態と異なる点は、一方の電極
６の一部分を延長させる代わりに一方の電極６に切欠部
を設け、この切欠部をマーカ８とした点が異なるのみ
で、他は第１の実施形態の磁気インピーダンス効果素子
１と同じである。The difference between the magneto-impedance effect element 9 of the second embodiment and the first embodiment is that a cutout is provided in one of the electrodes 6 instead of extending a part of the one of the electrodes 6. Is the same as the magneto-impedance effect element 1 of the first embodiment except that the marker 8 is used.
【００２６】このように構成された磁気インピーダンス
効果素子９にあっても、バイアス磁界付与方向（矢印Ｂ
方向）をその方向に配置されたマーカ８によって容易に
視認することができるため、磁気インピーダンス効果素
子９の配置作業の煩雑さを解消することができ、また、
マーカ８は一対の電極６，７を形成する製造工程で同時
に作り込むことができるため、手数を要することなく簡
単に形成することができる。Even in the magneto-impedance effect element 9 thus configured, the bias magnetic field application direction (arrow B)
Direction) can be easily visually recognized by the marker 8 arranged in that direction, so that the complexity of the work of arranging the magneto-impedance effect element 9 can be eliminated.
Since the marker 8 can be formed at the same time in the manufacturing process of forming the pair of electrodes 6 and 7, it can be easily formed without any trouble.
【００２７】尚、この第２の実施形態では、バイアス磁
界付与方向（矢印Ｂ方向）に位置する一方の電極６に設
けた切欠部をマーカ８としたもので説明したが、本発明
はこれに限定されるものではなく、図８に示すように、
非磁性基板２のバイアス磁界付与方向の端部を切り欠い
てマーカ８としたり、図９に示すように、磁性薄膜３の
バイアス磁界付与方向の端部を切り欠いてマーカ８とし
たり、あるいは、図１０に示すように、非磁性絶縁膜５
のバイアス磁界付与方向の角部を切り欠いてマーカ８と
したり、図１１に示すように、導電硬磁性膜４のバイア
ス磁界付与方向の角部を切り欠いてマーカ８とした構成
としてもよく、このようにしても、バイアス磁界付与方
向（矢印Ｂ方向）をその方向に配置されたマーカ８によ
って容易に視認することができ、また、非磁性基板２、
磁性薄膜３、非磁性絶縁膜５及び導電硬磁性膜４を形成
する各々の製造工程でマーカ８を同時に作り込むことが
できる。In the second embodiment, the notch provided in one electrode 6 positioned in the bias magnetic field applying direction (the direction of arrow B) is described as the marker 8, but the present invention is not limited to this. Without being limited, as shown in FIG.
An end of the non-magnetic substrate 2 in the direction of applying a bias magnetic field is cut out to form a marker 8, as shown in FIG. 9, an end of the magnetic thin film 3 in a direction of applying a bias magnetic field is cut out to form a marker 8, or As shown in FIG.
The marker 8 may be formed by cutting out a corner in the bias magnetic field applying direction of the marker 8 as shown in FIG. 11, or the marker 8 may be formed by cutting out a corner in the bias magnetic field applying direction of the conductive hard magnetic film 4 as shown in FIG. Also in this case, the direction of applying the bias magnetic field (the direction of arrow B) can be easily visually recognized by the marker 8 arranged in that direction.
In each of the manufacturing steps of forming the magnetic thin film 3, the non-magnetic insulating film 5, and the conductive hard magnetic film 4, the marker 8 can be formed simultaneously.
【００２８】次に、本発明の磁気インピーダンス効果素
子の第３の実施形態を図１２に基づいて説明する。Next, a third embodiment of the magneto-impedance effect element of the present invention will be described with reference to FIG.
【００２９】この第３の実施形態の磁気インピーダンス
効果素子１０が第１の実施形態と異なる点は、一方の電
極６の一部分を延長させる代わりに、マーカ８を非磁性
絶縁膜５あるいは一対の電極６，７と同一材料で形成し
て、磁性薄膜３、導電硬磁性膜４、非磁性絶縁膜５、非
磁性基板２及び一対の電極６，７とは別体で構成し、一
方の電極６の近傍に配設した点が異なるのみで、他は第
１の実施形態の磁気インピーダンス効果素子１と同じで
ある。The difference of the magneto-impedance effect element 10 of the third embodiment from the first embodiment is that the marker 8 is replaced with the non-magnetic insulating film 5 or a pair of electrodes instead of extending a part of one electrode 6. The magnetic thin film 3, the conductive hard magnetic film 4, the nonmagnetic insulating film 5, the nonmagnetic substrate 2, and the pair of electrodes 6 and 7 are formed separately from one another. Are the same as those of the magneto-impedance effect element 1 of the first embodiment except that they are arranged in the vicinity of.
【００３０】このように構成された磁気インピーダンス
効果素子１０にあっても、バイアス磁界付与方向（矢印
Ｂ方向）をその方向に配置されたマーカ８によって容易
に視認することができるため、磁気インピーダンス効果
素子１０の配置作業の煩雑さを解消することができ、ま
た、マーカ８は、非磁性絶縁膜５あるいは一対の電極
６，７を形成する各々の製造工程で同時に作り込むこと
ができるため、手数を要することなく簡単に形成するこ
とができる。また、マーカ８が非磁性材で形成されて導
電硬磁性膜４及び磁性薄膜３から離間して配置されてい
るため、磁気インピーダンス効果素子１０の特性に与え
る磁気的な悪影響を抑制することができる。Even in the magneto-impedance effect element 10 configured as described above, the direction in which the bias magnetic field is applied (the direction of arrow B) can be easily visually recognized by the marker 8 arranged in that direction. The marker 8 can be formed simultaneously in each of the manufacturing steps of forming the non-magnetic insulating film 5 or the pair of electrodes 6 and 7, since the complexity of the operation of arranging the element 10 can be eliminated. It can be formed easily without requiring. Further, since the marker 8 is formed of a non-magnetic material and is disposed apart from the conductive hard magnetic film 4 and the magnetic thin film 3, it is possible to suppress a magnetic adverse effect on the characteristics of the magneto-impedance effect element 10. .
【００３１】[0031]
【発明の効果】本発明は、以上説明したような形態で実
施され、以下に記載されるような効果を奏する。The present invention is embodied in the form described above and has the following effects.
【００３２】高周波電流を通電して外部磁界によりイン
ピーダンスの変化を発生する磁性薄膜と、この磁性薄膜
にバイアス磁界を付与するバイアス磁界付与手段とを備
え、前記バイアス磁界の付与方向を表示するマーカを設
けたので、前記バイアス磁界の付与方向を前記マーカに
よって容易に視認することができるため、前記バイアス
磁界の付与方向が外部磁界の方向に対して所定の向きと
なるように素子を配置する作業の煩雑さが解消でき、そ
の配置作業を容易に行うことが可能となる。A magnetic thin film for applying a high-frequency current to generate a change in impedance due to an external magnetic field, and a bias magnetic field applying means for applying a bias magnetic field to the magnetic thin film, wherein a marker for indicating the direction of application of the bias magnetic field is provided. Since the direction in which the bias magnetic field is applied can be easily visually recognized by the marker, the operation of arranging the elements such that the direction in which the bias magnetic field is applied is in a predetermined direction with respect to the direction of the external magnetic field is provided. The complexity can be eliminated, and the arrangement work can be easily performed.
【００３３】前記バイアス磁界付与手段は前記磁性薄膜
の長手方向に前記バイアス磁界を付与する硬磁性体で構
成されて前記磁性薄膜が形成された非磁性基板上に非磁
性絶縁膜を介して前記磁性薄膜を被覆するように設けら
れ、前記磁性薄膜の長手方向両端部にはそれぞれ電極が
設けられているので、前記バイアス磁界付与手段の小型
化を図りつつ、前記バイアス磁界の付与方向が外部磁界
の方向に対して所定の向きとなるように素子を配置する
作業の煩雑さが大幅に解消できる。The bias magnetic field applying means is formed of a hard magnetic material for applying the bias magnetic field in the longitudinal direction of the magnetic thin film, and the magnetic thin film is formed on a non-magnetic substrate on which the magnetic thin film is formed via a non-magnetic insulating film. Since the magnetic thin film is provided so as to cover the thin film, and electrodes are provided at both ends in the longitudinal direction of the magnetic thin film, the bias magnetic field applying direction is controlled by the external magnetic field while miniaturizing the bias magnetic field applying means. The complexity of the operation of arranging the elements so as to be in a predetermined direction with respect to the direction can be largely reduced.
【００３４】前記マーカが前記磁性薄膜、前記硬磁性
体、前記非磁性絶縁膜、前記非磁性基板及び前記電極の
何れかに一体的に設けられているので、前記マーカを素
子の一部に確実に設けることができる。Since the marker is provided integrally with any one of the magnetic thin film, the hard magnetic material, the non-magnetic insulating film, the non-magnetic substrate, and the electrode, the marker can be securely attached to a part of the element. Can be provided.
【００３５】前記磁性薄膜、前記硬磁性体、前記非磁性
絶縁膜、前記非磁性基板及び前記電極の何れかの一部を
延設させて前記マーカとしたので、前記マーカを手数を
要することなく簡単に形成することができる。Any one of the magnetic thin film, the hard magnetic material, the non-magnetic insulating film, the non-magnetic substrate, and the electrode is extended to form the marker. It can be easily formed.
【００３６】前記磁性薄膜、前記硬磁性体、前記非磁性
絶縁膜、前記非磁性基板及び前記電極の何れかに切欠部
を設け、この切欠部を前記マーカとしたので、前記マー
カを手数を要することなく簡単に形成することができ
る。A notch is provided in any one of the magnetic thin film, the hard magnetic material, the non-magnetic insulating film, the non-magnetic substrate, and the electrode, and the notch is used as the marker. It can be easily formed without any.
【００３７】前記マーカを前記磁性薄膜、前記硬磁性
体、前記非磁性絶縁膜、前記非磁性基板及び前記電極と
は別体で構成し、前記マーカが前記非磁性絶縁膜あるい
は前記電極と同一材料にて形成されて前記電極の近傍に
配設されているので、前記マーカを手数を要することな
く簡単に形成することができるとともに、前記マーカが
素子の特性に与える磁気的な悪影響を抑制することがで
きる。The marker is formed separately from the magnetic thin film, the hard magnetic material, the non-magnetic insulating film, the non-magnetic substrate and the electrode, and the marker is made of the same material as the non-magnetic insulating film or the electrode. And the marker is arranged in the vicinity of the electrode, so that the marker can be easily formed without requiring any trouble, and the marker has an adverse magnetic influence on the characteristics of the element. Can be.
【図１】本発明の第１の実施形態に係わる磁気インピー
ダンス効果素子の斜視図。FIG. 1 is a perspective view of a magneto-impedance effect element according to a first embodiment of the present invention.
【図２】図１の平面図。FIG. 2 is a plan view of FIG. 1;
【図３】本発明の第１の実施形態に係わる磁気インピー
ダンス効果素子の応用例を説明するための図であって、
マーカを非磁性基板に設けた状態を示す平面図。FIG. 3 is a diagram for explaining an application example of the magneto-impedance effect element according to the first embodiment of the present invention,
FIG. 4 is a plan view showing a state where a marker is provided on a non-magnetic substrate.
【図４】本発明の第１の実施形態に係わる磁気インピー
ダンス効果素子の応用例を説明するための図であって、
マーカを磁性薄膜に設けた状態を示す平面図。FIG. 4 is a diagram for explaining an application example of the magneto-impedance effect element according to the first embodiment of the present invention,
FIG. 3 is a plan view showing a state in which a marker is provided on a magnetic thin film.
【図５】本発明の第１の実施形態に係わる磁気インピー
ダンス効果素子の応用例を説明するための図であって、
マーカを非磁性絶縁膜に設けた状態を示す平面図。FIG. 5 is a diagram for explaining an application example of the magneto-impedance effect element according to the first embodiment of the present invention,
FIG. 4 is a plan view showing a state where a marker is provided on a nonmagnetic insulating film.
【図６】本発明の第１の実施形態に係わる磁気インピー
ダンス効果素子の応用例を説明するための図であって、
マーカを導電硬磁性膜に設けた状態を示す平面図。FIG. 6 is a diagram for explaining an application example of the magneto-impedance effect element according to the first embodiment of the present invention,
FIG. 4 is a plan view showing a state in which a marker is provided on a conductive hard magnetic film.
【図７】本発明の第２の実施形態に係わる磁気インピー
ダンス効果素子の平面図。FIG. 7 is a plan view of a magneto-impedance effect element according to a second embodiment of the present invention.
【図８】本発明の第２の実施形態に係わる磁気インピー
ダンス効果素子の応用例を説明するための図であって、
マーカを非磁性基板に設けた状態を示す平面図。FIG. 8 is a diagram for explaining an application example of the magneto-impedance effect element according to the second embodiment of the present invention,
FIG. 4 is a plan view showing a state where a marker is provided on a non-magnetic substrate.
【図９】本発明の第２の実施形態に係わる磁気インピー
ダンス効果素子の応用例を説明するための図であって、
マーカを磁性薄膜に設けた状態を示す平面図。FIG. 9 is a diagram for explaining an application example of the magneto-impedance effect element according to the second embodiment of the present invention,
FIG. 3 is a plan view showing a state in which a marker is provided on a magnetic thin film.
【図１０】本発明の第２の実施形態に係わる磁気インピ
ーダンス効果素子の応用例を説明するための図であっ
て、マーカを非磁性絶縁膜に設けた状態を示す平面図。FIG. 10 is a diagram for explaining an application example of the magneto-impedance effect element according to the second embodiment of the present invention, and is a plan view showing a state in which a marker is provided on a non-magnetic insulating film.
【図１１】本発明の第２の実施形態に係わる磁気インピ
ーダンス効果素子の応用例を説明するための図であっ
て、マーカを導電硬磁性膜に設けた状態を示す平面図。FIG. 11 is a diagram for explaining an application example of the magneto-impedance effect element according to the second embodiment of the present invention, and is a plan view showing a state where a marker is provided on a conductive hard magnetic film.
【図１２】本発明の第３の実施形態に係わる磁気インピ
ーダンス効果素子の平面図。FIG. 12 is a plan view of a magneto-impedance effect element according to a third embodiment of the present invention.
【図１３】従来の磁気インピーダンス効果素子の平面
図。FIG. 13 is a plan view of a conventional magneto-impedance effect element.
１ 磁気インピーダンス効果素子 ２ 非磁性基板 ３ 磁性薄膜 ４ 導電硬磁性膜 ５ 非磁性絶縁膜 ６ 電極 ７ 電極 ８ マーカ ９ 磁気インピーダンス効果素子 １０ 磁気インピーダンス効果素子 REFERENCE SIGNS LIST 1 magnetic impedance effect element 2 nonmagnetic substrate 3 magnetic thin film 4 conductive hard magnetic film 5 nonmagnetic insulating film 6 electrode 7 electrode 8 marker 9 magnetic impedance effect element 10 magnetic impedance effect element
Claims (6)
ンピーダンスの変化を発生する磁性薄膜と、この磁性薄
膜にバイアス磁界を付与するバイアス磁界付与手段とを
備え、前記バイアス磁界の付与方向を表示するマーカを
設けたことを特徴とする磁気インピーダンス効果素子。1. A magnetic thin film for applying a high-frequency current to generate a change in impedance due to an external magnetic field, and a bias magnetic field applying means for applying a bias magnetic field to the magnetic thin film, and displaying a direction in which the bias magnetic field is applied. A magneto-impedance effect element comprising a marker.
膜の長手方向に前記バイアス磁界を付与する硬磁性体で
構成されて前記磁性薄膜が形成された非磁性基板上に非
磁性絶縁膜を介して前記磁性薄膜を被覆するように設け
られ、前記磁性薄膜の長手方向両端部にはそれぞれ電極
が設けられていることを特徴とする請求項１に記載の磁
気インピーダンス効果素子。2. The method according to claim 1, wherein the bias magnetic field applying unit is formed of a hard magnetic material that applies the bias magnetic field in a longitudinal direction of the magnetic thin film, and a non-magnetic insulating film is formed on a non-magnetic substrate on which the magnetic thin film is formed. The magneto-impedance effect element according to claim 1, wherein the magnetic thin film is provided so as to cover the magnetic thin film, and electrodes are provided at both ends in the longitudinal direction of the magnetic thin film.
体、前記非磁性絶縁膜、前記非磁性基板及び前記電極の
何れかに一体的に設けられていることを特徴とする請求
項２に記載の磁気インピーダンス効果素子。3. The marker according to claim 2, wherein the marker is integrally provided on any one of the magnetic thin film, the hard magnetic material, the nonmagnetic insulating film, the nonmagnetic substrate, and the electrode. The magneto-impedance effect element according to any one of the preceding claims.
性絶縁膜、前記非磁性基板及び前記電極の何れかの一部
を延設させて前記マーカとしたことを特徴とする請求項
３に記載の磁気インピーダンス効果素子。4. The marker according to claim 3, wherein any one of the magnetic thin film, the hard magnetic material, the non-magnetic insulating film, the non-magnetic substrate and the electrode is extended. 3. The magneto-impedance effect element according to item 1.
性絶縁膜、前記非磁性基板及び前記電極の何れかに切欠
部を設け、この切欠部を前記マーカとしたことを特徴と
する請求項３に記載の磁気インピーダンス効果素子。5. A notch is provided in any one of the magnetic thin film, the hard magnetic material, the non-magnetic insulating film, the non-magnetic substrate, and the electrode, and the notch is used as the marker. Item 4. A magneto-impedance effect element according to item 3.
体、前記非磁性絶縁膜、前記非磁性基板及び前記電極と
は別体で構成し、前記マーカが前記非磁性絶縁膜あるい
は前記電極と同一材料にて形成されて前記電極の近傍に
配設されていることを特徴とする請求項２に記載の磁気
インピーダンス効果素子。6. The marker is formed separately from the magnetic thin film, the hard magnetic material, the non-magnetic insulating film, the non-magnetic substrate and the electrode, and the marker is formed separately from the non-magnetic insulating film or the electrode. The magneto-impedance effect element according to claim 2, wherein the magneto-impedance effect element is formed of the same material and disposed near the electrode.
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|---|---|---|---|
| JP2000226235A JP3866498B2 (en) | 2000-07-21 | 2000-07-21 | Magneto-impedance effect element and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000226235A JP3866498B2 (en) | 2000-07-21 | 2000-07-21 | Magneto-impedance effect element and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| JP2002043650A true JP2002043650A (en) | 2002-02-08 |
| JP3866498B2 JP3866498B2 (en) | 2007-01-10 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004039837A (en) * | 2002-07-03 | 2004-02-05 | Japan Science & Technology Corp | Magnetic field detecting element |
| JP2004327755A (en) * | 2003-04-25 | 2004-11-18 | Japan Science & Technology Agency | High-frequency variable reactance element |
-
2000
- 2000-07-21 JP JP2000226235A patent/JP3866498B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004039837A (en) * | 2002-07-03 | 2004-02-05 | Japan Science & Technology Corp | Magnetic field detecting element |
| JP4512709B2 (en) * | 2002-07-03 | 2010-07-28 | 独立行政法人科学技術振興機構 | Magnetic field detection element |
| JP2004327755A (en) * | 2003-04-25 | 2004-11-18 | Japan Science & Technology Agency | High-frequency variable reactance element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3866498B2 (en) | 2007-01-10 |
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