JP2002026331A5 - - Google Patents

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Publication number
JP2002026331A5
JP2002026331A5 JP2000205919A JP2000205919A JP2002026331A5 JP 2002026331 A5 JP2002026331 A5 JP 2002026331A5 JP 2000205919 A JP2000205919 A JP 2000205919A JP 2000205919 A JP2000205919 A JP 2000205919A JP 2002026331 A5 JP2002026331 A5 JP 2002026331A5
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JP
Japan
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JP2000205919A
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Japanese (ja)
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JP2002026331A (ja
JP4519278B2 (ja
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Publication of JP2002026331A5 publication Critical patent/JP2002026331A5/ja
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JP2000205919A 2000-07-06 2000-07-06 半導体装置の作製方法 Expired - Fee Related JP4519278B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000205919A JP4519278B2 (ja) 2000-07-06 2000-07-06 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000205919A JP4519278B2 (ja) 2000-07-06 2000-07-06 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002026331A JP2002026331A (ja) 2002-01-25
JP2002026331A5 true JP2002026331A5 (enrdf_load_stackoverflow) 2009-01-08
JP4519278B2 JP4519278B2 (ja) 2010-08-04

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Family Applications (1)

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JP2000205919A Expired - Fee Related JP4519278B2 (ja) 2000-07-06 2000-07-06 半導体装置の作製方法

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JP (1) JP4519278B2 (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687809B2 (en) 1995-01-17 2010-03-30 Semiconductor Energy Laboratory Co., Ltd Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
US7955975B2 (en) 2002-04-09 2011-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8120031B2 (en) 2002-05-17 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Display device including an opening formed in a gate insulating film, a passivation film, and a barrier film
US8709847B2 (en) 2002-04-15 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating display device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
KR100915231B1 (ko) 2002-05-17 2009-09-02 삼성전자주식회사 저유전율 절연막의 증착방법, 이를 이용한 박막트랜지스터및 그 제조방법
JP4524413B2 (ja) * 2003-06-30 2010-08-18 シャープ株式会社 結晶化方法
JP5243046B2 (ja) * 2006-01-25 2013-07-24 シャープ株式会社 半導体装置の製造方法、及び、半導体装置
KR100749478B1 (ko) * 2006-11-21 2007-08-14 삼성에스디아이 주식회사 고상 결정화 장치 및 이를 이용한 박막 트랜지스터의 제조방법
JP2008300865A (ja) * 2008-07-30 2008-12-11 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられる半導体製造装置並びに液晶表示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3345363B2 (ja) * 1998-12-07 2002-11-18 富士通株式会社 多結晶シリコン薄膜の形成方法及び薄膜トランジスタの製造方法
JP4450900B2 (ja) * 1998-10-06 2010-04-14 株式会社半導体エネルギー研究所 半導体装置の作製方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687809B2 (en) 1995-01-17 2010-03-30 Semiconductor Energy Laboratory Co., Ltd Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
US7955975B2 (en) 2002-04-09 2011-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US7999263B2 (en) 2002-04-09 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8502215B2 (en) 2002-04-09 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8946718B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8946717B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8709847B2 (en) 2002-04-15 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating display device
US8120031B2 (en) 2002-05-17 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Display device including an opening formed in a gate insulating film, a passivation film, and a barrier film

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