JP2002026107A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make simple and easy works from the substrate processing to the inspection and shorten the time, by connecting an inspecting station to a processing station. SOLUTION: A cassette station S1, a process station S3 having an applying station 42 and a developing unit 41, and an inspecting station having a film thickness inspector 31 and a defect inspector 32 are arranged approximately right angles to a cassette 22 array in the cassette station S1, with the inspecting station S2 being disposed between the cassette and the process stations S1, S3. In such a constitution the inspecting station is connected to the process station and wafers W are transferred automatically between these stations S2, S3 and this enables facilitating simple and easy works from the substrate processing to the inspection and shorten the time.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention performs, for example, a coating process or a developing process of a resist solution on a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display, and inspects the processing state of these processes. The present invention relates to a substrate processing apparatus.

[0002]

2. Description of the Related Art In a photolithography technique in a manufacturing process of a semiconductor device, a resist is applied to a surface of a semiconductor wafer (hereinafter, referred to as a wafer), and the applied resist is exposed to a predetermined pattern and further developed. A resist film having a predetermined pattern is formed. Such a series of processing is performed by a system in which an exposure apparatus is connected to a coating / developing apparatus.

FIG. 11 is a plan view showing a conventional example of such an apparatus. A cassette C containing 25 substrates, for example, 25 semiconductor wafers W, is carried into a cassette stage 1 of a cassette station A1. A processing station A2 is connected to the cassette station A1, and an exposure device (not shown) is connected to the processing station A2 via an interface station A3.

The wafer W in the cassette C on the cassette stage 1 is taken out by the transfer arm 11 and passed through the transfer section of the shelf unit 12 to the coating unit 13.
Where the resist is applied. Thereafter, the wafer W is transferred and exposed on the route of the wafer transfer means 14 → the transfer section of the shelf unit 15 → the interface station A3 → the exposure apparatus. The exposed wafer W is transported to the processing station A2 through the reverse path, and the coating unit 1
After being developed by a developing unit (not shown) provided at the lower stage of No. 3, the wafer is conveyed along the route of the wafer transfer means 14 → the transfer section of the shelf unit 12 → the cassette C.

The shelves of the shelf units 12 and 15 are configured as a heating section, a cooling section, a transfer section for the wafer W, a hydrophobizing section, and the like. In order to apply a resist at a predetermined temperature, a heating process and a cooling process are performed in the shelf units 12 and 15 in this order. Reference numeral 16 denotes a transfer arm for transferring the wafer W between the processing station A2 and the exposure apparatus.

Conventionally, the wafer W after development has been inspected visually for scratches and uneven coating on the surface by an operator. Recently, these inspections can be automatically performed because it is necessary to also perform an overlay inspection of the upper layer portion and the lower layer portion of the resist pattern and an inspection of presence / absence of foreign matter contamination during application of the resist liquid. The above-mentioned inspection tends to be performed using an automatic inspection device.

This automatic inspection apparatus is an independent apparatus called a stand-alone type or the like constituted by combining a plurality of inspection apparatuses, and is installed separately from the above-mentioned coating / developing apparatus. Therefore, the wafer W that has been subjected to the development processing by the coating / developing apparatus is transported to an automatic inspection apparatus, where a predetermined inspection is performed.

However, if the automatic inspection device is installed separately from the coating / developing device, an operator who checks the operation of the automatic inspection device is required separately. In addition, since the wafer W must be transferred between the coating / developing apparatus and the automatic inspection apparatus, the transfer operation is troublesome, and when a total inspection of the wafer W is required, there is a considerable problem. In addition, since it takes time to transport, it is difficult to inspect the state of the development processing in real time, and further, there is a problem that a new facility is required to reduce particles in an environment where the automatic inspection device is placed.

For this reason, the present inventors are studying the incorporation of an automatic inspection apparatus into the above-mentioned coating / developing apparatus. At this time, in order to utilize the current layout of the coating / developing apparatus, it is conceivable to connect an automatic inspection apparatus 17 beside the cassette station A1 as shown by a broken line in FIG. Processing station A2
In some cases, the automatic inspection device 17 projects laterally rather than the exposure device, which is disadvantageous in layout. In some cases, it is necessary to perform an inspection not only after development but also after application of a resist solution, and a configuration that can flexibly respond to a user's request is desired.

The present invention has been made under such circumstances, and an object of the present invention is to connect an inspection station having an inspection unit to a processing station to configure a substrate processing apparatus, thereby enabling substrate processing to be inspected. To provide a substrate processing apparatus that can simplify the operation over a short period of time and reduce the time.

[0011]

SUMMARY OF THE INVENTION Therefore, a substrate processing apparatus according to the present invention comprises a mounting portion for mounting a substrate cassette containing a plurality of substrates, and a substrate cassette mounted on the mounting portion. A cassette station including a transfer unit for transferring a substrate, and a processing station including a substrate processing unit for applying a processing liquid to the substrate transported from the cassette station; An inspection station connected to a station and including an inspection unit for inspecting a processing state of the substrate processing unit with respect to the substrate; and a substrate transport unit for transferring the substrate between the processing station and the inspection station. , Is included.

In such a configuration, the inspection station and the processing station are provided adjacent to each other, and the substrate is automatically transported between the processing station and the inspection station. And the substrate transfer time is short. This simplifies the total work from substrate processing to inspection, and allows the processing status to be inspected in real time, enabling highly accurate inspections and the total time from processing to inspection. Can be shortened.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to a substrate coating and developing apparatus will be described below. FIG. 1 is a schematic perspective view showing the inside of this embodiment, and FIG. 2 is a schematic plan view. In FIG.
Reference numeral 2 denotes an inspection station for performing a predetermined inspection on the wafer W; S3, a processing station for performing substrate processing such as resist coating processing and development processing on the wafer W; and S4, an interface station. And S5 is an exposure device.

The cassette station S1 is a cassette serving as a mounting portion for mounting a wafer cassette (hereinafter, referred to as "cassette") 22 forming a plurality of substrates, for example, four substrate cassettes accommodating 25 wafers W, for example. Stage 21
And a transfer arm 23 serving as transfer means for transferring the wafer W between the cassette 22 on the cassette stage 21 and a transfer section 33 of the inspection station S2 described later. . Delivery arm 23
Is configured to be able to move up and down, move in X and Y directions, and rotate around a vertical axis.

The inspection station S2 is arranged in a direction substantially orthogonal to the direction in which the cassettes in the cassette station S1 are arranged.
It is provided connected to the cassette station S1.
2 and 3 (a perspective view of the inspection station S2), and FIG.
(A cross-sectional view as viewed from the side of the processing station S3), an inspection apparatus serving as an inspection unit for inspecting the processing state of a plurality of substrates, for example, two film thickness inspection apparatuses 31 (31A, 31A,
31B) and, for example, two defect inspection devices 32 (32A,
32B) and, for example, one transfer unit 33 and 1
A chemical unit C forming one storage unit, an electric unit E forming one storage unit, for example, and one substrate transfer unit MA1, for example, a wafer after resist coating processing and development processing. For W, it is configured to inspect the processing state of a predetermined substrate, such as the thickness of the resist film, the development line width, the presence or absence of scratches on the resist film, coating unevenness of the resist solution, and development defects after the development processing. ing.

An example of the layout of the inspection station S2 will be described.
A first inspection unit U1 provided with a plurality of inspection devices, here, two film thickness inspection devices 31A and 31B, is provided on the back side of the cassette station S1, for example, on the right side when viewed from the cassette station S1. ing. This inspection unit U1
For example, a transfer unit 33 is provided between the two film thickness inspection devices 31A and 31B, and a chemical unit C is assigned to a lower side of the inspection unit U1.

The film thickness inspection device 31 inspects the film thickness of a resist film applied on an underlayer film on a substrate, for example, an oxide film, polysilicon or the like optically by an optical interference method as described later. It is a device to do. In addition, the delivery unit 33
A transfer table for transferring the wafer W between the transfer arm 23 of the cassette station S1 and the substrate transfer means MA1 is provided. The transfer table is, for example, a lift pin (not shown) configured to be able to move up and down by a lift mechanism. The wafer W is transferred to the transfer table by cooperation with the arm 23 and the substrate transfer means MA1.

The chemical unit C accommodates members used in a coating unit or the like described later, for example, a supply system of a chemical solution, and includes, for example, a storage tank for a solvent or a resist solution, and an opening / closing valve for the storage tank. Various valves,
A filter, a drive unit for a valve, a drive system for a discharge nozzle, and the like are housed.

For example, on the left side when viewed from the cassette station S1, for example, a plurality of inspection devices,
A second inspection unit U2 including the defect inspection devices 32A and 32B is provided, and an electric unit E is assigned to a lower side of the inspection unit U2.

For example, as described later, the defect inspection apparatus 32 is scratched on the surface of the resist film by imaging with a CCD camera, the degree of overlap between the resist pattern of the upper layer and the resist pattern of the lower layer, and mixed during the application of the resist liquid. This is an apparatus for inspecting the presence or absence of foreign matter, unevenness in application of a resist solution, development defects after development processing, and the like. Further, the electric unit E includes the film thickness inspection device 31, the defect inspection device 32, the substrate transporting means MA1, and members used for a coating unit and a developing unit described later, for example, a power supply unit of these driving systems,
A controller for performing such power control and the like, and electrical equipment such as a switchboard for distributing power thereto are housed therein.

Here, an example of the defect inspection apparatus 32 will be described with reference to FIG. 5. For example, a case 100 provided with a transfer port for a wafer W, and provided in the case 100 to support the wafer W horizontally. Rotating table 110 configured to adjust its direction, a CCD camera 120 that can move in the X, Y, and Z directions to image the surface of the wafer W on the rotating table 110, and an illumination unit 130 And
The inspection is performed by analyzing the image of the wafer W obtained by the CCD camera 120 with a personal computer or the like, which is a data processing unit (not shown). Note that the CCD camera 120 may be fixed, and the configuration may be such that the mounting table 110 side of the wafer W can move in the X, Y, and Z directions.

Further, the above-mentioned film thickness inspection device 31
A film thickness probe 140 having a light emitting unit and a light receiving unit, which is indicated by a dotted line in the figure, is provided on the side of the CD camera 120, and the reflectance is obtained by irradiating the wafer with light, and this is analyzed by a computer. The film thickness is detected.

These first and second inspection units U1, U1
In order to transfer the wafer W between each unit of the inspection units U1 and U2 and a transfer unit 46 of the processing station S3, which will be described later, for example, it can move up and down, move left and right, move back and forth, and move vertically between U2. A substrate transfer means MA1 rotatable around an axis is provided. However, in FIG. 1, the substrate transfer means MA1 is omitted for convenience.

In this example, an example was described in which the inspection station S2 was provided with the chemical unit C and the electric unit E. However, it is not always necessary to provide both the chemical unit C and the electric unit E. May be provided, or the inspection station S2 may include a film thickness inspection device 31 or a defect inspection device 3
Only the inspection unit such as 2 may be arranged. Further, the number of inspection units arranged in the inspection station S2 is not limited to the above example, and may be one, or a plurality of inspection units may be provided in three or four stages. Further, regarding the type of the inspection unit, only the film thickness inspection device 31 or the defect inspection device 32 may be provided, or another inspection device may be provided in combination.

Further, the inspection station S2 is configured independently. That is, as shown in FIGS. 3 and 4, for example, the station S2 is separated from another space by the wall portion 34, and the transfer portion of the inspection station S2 of the wall portion 34 adjacent to the cassette station S1 and the processing station S3. At the position corresponding to 33,
The transfer arm 23 transfers the wafer W to the transfer unit 33.
A transfer port 35 for transfer is formed, and a substrate transfer unit MA1 is provided at a position corresponding to the transfer unit 46 of the processing station S3 on the wall 34 adjacent to the cassette station S1 and the processing station S3. A transfer port (not shown) for transferring the wafer W to and from each other is formed.

In the inspection station S2 thus partitioned by the wall portion 34, for example, as shown in FIG. 4, a filter unit F is provided so as to cover the upper side, and the lower side of the chemical unit C and the electric unit E is provided. While the atmosphere recovered from the exhaust gas is exhausted to the factory exhaust system, a part of the atmosphere is introduced into a filter device 36 serving as an adjusting unit, and is cleaned by the filter device 36 and adjusted to a predetermined temperature and a predetermined humidity. The air is blown out into each part through the filter unit F as a down flow. The filter unit F includes, for example, a filter for purifying air, a suction fan, and the like, and the filter device transmits an air, an impurity removing unit for removing impurities, a heating mechanism and a humidifying mechanism, and air. It has a sending section and the like. It is also conceivable to supply air having a predetermined temperature and humidity adjusted to the respective inspection units and supply clean room air to the cassette station S1, without configuring the air circulation means described above.

Further, the inspection station S2 has the first
And second inspection units U1, U2, and substrate transport means M
A1 is an inspection station S indicated by a dashed line in FIG.
2 are symmetrically arranged in the X direction in the figure via a line L that bisects the X direction. That is, even when the inspection station S2 is rotated half a turn and the second inspection unit U2 is positioned on the right side when viewed from the cassette station S1, the transfer arm 23 of the cassette station S2 is connected to the transfer section 33 through the transfer port 35. Can be accessed, and the substrate transport means MA1 of the inspection station S1 can access the shelf unit R of the processing station S3 via a delivery port (not shown).
1 can be accessed.

The processing station S3 is connected to the inspection station S2 in a direction substantially perpendicular to the direction in which the cassettes of the cassette station S1 are arranged.
Then, for example, the developing unit 41 forming two substrate processing units
(41A, 41B), a coating unit 42 (42A, 42B) forming two substrate processing units, for example, three shelf units R (R1, R2, R3), and, for example, one substrate transfer unit MA2. A process of transferring a wafer W between the inspection station S2 and the interface station S4, applying a resist solution to the wafer W in the station S3, The wafer W is heated and cooled to a predetermined temperature before and after the W development processing, and the wafer W is cooled.

An example of the layout of the processing station S3 will be described. For example, the developing unit 4 is located on the right side when viewed from the cassette station S1.
1 and the processing unit U3 including the coating unit 42
It is provided over the steps. In the following description, the cassette station S1 will be referred to as the near side, and the exposure apparatus S5 will be referred to as the far side.

Further, on the left side of the processing unit U3 as viewed from the cassette station S1, for example, it is possible to move the wafer W between the coating unit 42, the developing unit 41 and the shelf unit R, for example, it can be moved up and down, right and left, and back and forth. Is provided with a substrate transfer means MA2 which is configured to be movable and rotatable about a vertical axis. When viewed from the cassette station S1 side of the substrate transfer means MA2, a shelf unit R1 is arranged on the near side, a shelf unit R2 is arranged on the back side, and a shelf unit R3 is arranged on the left side. However, in FIG. 1, the shelf unit R3 and the substrate transfer means MA2 are omitted for convenience.

As a result, the first and second inspection units U of the inspection station S2 of the station S3.
Predetermined spaces are respectively secured in portions adjacent to U1 and U2, and the processing unit U3 and the shelf unit R3 are respectively disposed via these spaces. The shelf unit R includes a heating unit 43 for heating the wafer W, a cooling unit 44 for cooling the wafer W, and a surface for making the surface of the wafer hydrophobic, as shown as a representative of the shelf unit R1 in FIG. For transferring the wafer W between the substrate transfer means MA1 of the inspection station S2 and the substrate transfer means MA2 of the station S3 in the shelf unit R1, and the station in the shelf unit R2. The transfer unit 46 having a transfer table for transferring the wafer W between the substrate transfer means MA2 of S3 and the transfer arm A of the interface station S4 described later, and the alignment of the wafer W in the shelf unit R1. The alignment units 47 for performing the operations are vertically arranged.

FIG. 7 shows the developing unit 41, for example.
The reference numeral 51 indicates a cup, in which a rotatable spin chuck 52 having a vacuum suction function is provided. The spin chuck 52 is configured to be able to move up and down by an elevating mechanism 53. When the spin chuck 52 is located above the cup 51, it transfers a wafer W to and from an arm 61 of the substrate transfer means MA 1 described later. Is performed.

Regarding the delivery of the wafer W,
The spin chuck 52 relatively receives and receives the wafer W on the drum 61 from above the cup 51 above the cup 51,
In addition, by the reverse operation, it is delivered to the arm 61 from the spin chuck 52 side. 54 is a processing liquid discharge nozzle,
Reference numeral 55 denotes a processing liquid supply pipe, and reference numeral 56 denotes a support arm for horizontally moving the nozzle.

The discharge nozzle 54 has a plurality of supply holes arranged, for example, in the diameter direction of the wafer W, and discharges the developing solution from the discharge nozzle 54 onto the surface of the wafer W on the spin chuck 52. By rotating the spin chuck 52 half a turn, the developer is loaded on the wafer W, and a liquid film of the developer is formed.

The coating unit 42 is a developing unit 41
However, the coating unit C is configured so that the discharge nozzle 54 supplies the processing liquid to, for example, the vicinity of the center of the wafer W, and the wafer W on the spin chuck 52 is provided.
A resist liquid as a processing liquid is dropped from a discharge nozzle 54 onto the surface of the wafer W, and the spin chuck 52 is rotated to spread and apply the resist liquid onto the wafer W.

The substrate transfer means MA (MA1, MA2)
For example, as shown in FIG. 8, three arms 61 for holding a wafer W, a base 62 for supporting the arm 61 so as to be able to move forward and backward, and a base 62 for allowing the base 62 to move up and down. And a pair of guide rails 63, 64 for supporting. The guide rails 63, 64 are rotated by a rotation drive unit 65, so that they can move forward and backward, move up and down, and rotate around a vertical axis. It is configured.

An interface station S4 is connected next to the processing station S3, and a wafer W on which a resist film is formed is exposed on the back side of the interface station S4. An exposure apparatus S5 for performing the operation is connected. Interface station S4
Is provided with a transfer arm A for transferring the wafer W between the processing station S3 and the exposure apparatus S5. The transfer arm A is connected to the transfer unit 46 of the shelf unit R2 of the processing station S3 by exposure. In order to transfer the wafer W to and from the apparatus S4, for example, it is configured to be able to move up and down, move left and right, back and forth, and rotate around a vertical axis.

Here, the inspection station S2 has a width in the arrangement direction of the above-described cassette station S1 and the processing station S2 (Y direction in FIG. 2, that is, the cassette station S2).
(The length in the arrangement direction of one cassette 22), and the cassette station S1, the inspection station S2, and the processing station S
3. The interface station S4 is configured to be able to freely contact and separate from each other. That is, FIG.
As representatively shown in FIG. 2, they are separated from each other by walls, and are joined by connecting members such as joint stoppers, screws, and magnets. As a result, the inspection station S2 can be arranged between the cassette station S1 and the processing station S3 as in the example described above, or can be arranged between the processing station S4 and the interface station S4. Has become. In addition, the inspection station S2
A caster roller is attached to, for example, a lower portion of the inspection station S2 so that the substrate transfer means MA1 can be easily maintained, and is configured to be able to be pulled out and moved in the front-rear direction (Y direction in the drawing).

Next, the operation of the above embodiment will be described. First, a cassette 22 containing, for example, 25 wafers W is loaded into the cassette stage 21 by an automatic transfer robot (or an operator), and the wafer W is taken out of the cassette 22 by the transfer arm 23, and the wall portion is formed. 3
4 through the delivery port 35 of the inspection station S2.

Next, the wafer W is transferred by the substrate transfer means MA1 to the film thickness inspection device 31 of the inspection station S2, where the thickness of bare silicon is measured. Subsequently, the wafer W is placed on the transfer section 46 of the shelf unit R1 of the processing station S3 by the substrate transfer means MA1 of the inspection station S2, and then the processing station S3
Is transported along the path of the hydrophobic unit 45 of the shelf unit R → the cooling unit 44 of the shelf unit R → the coating unit 42, and after the wafer surface is hydrophobized, cooled to a predetermined temperature to adjust the temperature. Is performed and the coating unit 42
At a predetermined temperature.

The wafer W thus coated with the resist solution
Is transferred to the substrate transfer means MA1 of the inspection station S2 via the transfer section 46 of the shelf unit R1, and the thickness of the resist film is measured by the film thickness inspection device 31. The wafer W after the measurement is transferred to the processing station S3, and transferred by the substrate transfer means MA2 to the exposure apparatus S5 via the transfer unit 46 of the shelf unit R2 and the transfer arm A of the interface station S4. Exposure is performed.

The exposed wafer W is transferred to the processing station S3 through the transfer unit 46 of the exposure unit S5, the transfer arm A of the interface station S4, and the shelf unit R2 of the processing station S3. The heating unit 43 of the unit R → the cooling unit 44 of the shelf unit R → conveyed along the route of the developing unit 41,
The wafer W for which the predetermined temperature adjustment has been performed is
At a predetermined temperature, for example, 23 ° C., which is the application temperature of the developer.

Thereafter, the wafer W is transferred to the heating unit 43 of the shelf unit R by the substrate transfer means MA2 of the processing station S3.
The wafer W of the transfer unit 46 is received by the substrate transfer means MA1 of the inspection station S2. The cooling unit 44 of the shelf unit R transfers the wafer W in the transfer unit 46 of the shelf unit R1. Then, at the inspection station S2,
The wafer is conveyed to the defect inspection device 32 by the substrate conveying means MA1, where the development line width is measured, whether the surface of the resist film is scratched, the degree of overlap between the resist pattern in the upper layer and the resist pattern in the lower layer, contamination by foreign matter during resist application. Inspection of the processing state of the developing process, such as presence or absence of unevenness, unevenness in application of the resist solution, and development defects after the developing process is performed.

Next, the wafer W subjected to the predetermined inspection is
The wafer W in the transfer unit 33 is transferred from the substrate transfer unit MA1 to the transfer unit 33, and is returned to, for example, the original cassette 22 by the transfer arm 23.

Here, in the above-described apparatus, the wafer W is sequentially transferred to the film thickness inspection apparatus 31 → the transfer section 46 of the shelf unit R1 of the processing station S2 via the transfer section 33 of the inspection station S2, and is subsequently vacant. Hydrophobic part 45
→ Available cooling unit 44 → Available coating unit 42
→ Transfer section 46 of shelf unit R1 → free film thickness inspection device 31 of inspection station S2 → Transfer section 46 of shelf unit R of processing station S2 → transported through interface station S4, and after exposure The wafer W is located at the interface station S4 → the vacant heating section 43 of the processing station S2 → the vacant cooling section 44 → the developing unit 41 → the vacant heating section 43 → the vacant cooling section 44 → the shelf unit. Delivery part 46 of R1
, And then may be transported along the path from the vacant defect inspection device 32 to the delivery unit 33 in the inspection station S2.

In the above-described embodiment, a station provided with an inspection device is formed, and this station is installed between the cassette station S1 and the processing station S3. Therefore, the application, exposure, development, and inspection of the resist are performed in common. The operator can monitor, so the number of operators can be reduced, and when any defect is found by inspection, the next action such as identification of the cause or elimination of the cause should be taken promptly. Can be.

Further, since the transfer of the wafer W between the processing station S3 and the inspection station S2 is all performed automatically, the trouble of the transfer operation is eliminated, and the total work from the substrate processing to the inspection is simplified. Can be. The wafer W between these stations S2 and S3
Transport time is also short, so that the total work time from the substrate processing to the inspection can be reduced, and the state of the development processing can be inspected in real time, so that a more accurate inspection can be performed. Early detection of any defect can be achieved. Furthermore, since the inspection device is incorporated inside the coating / developing device, equipment for reducing particles can be shared.

At this time, as in the above-described example, if the inspection station S2 is configured by combining a plurality of inspection apparatuses, a plurality of inspections can be performed on the wafer W in the same station. Since it is effective and the transport time between the inspection devices is considerably short, the total time required for the inspection is also reduced.

Since the width of the inspection station S2 in the direction perpendicular to the arrangement direction is not larger than the cassette station S1 and the processing station S2, the width from the cassette station S1 to the interface station S4 in the Y direction in FIG. Since there is no protruding portion, it is advantageous in layout.

Further, when an inspection station S2 having the same width as that of the cassette station S1 is separately prepared and a plurality of inspection devices are incorporated, the width of the inspection station S2 in the arrangement direction is adjusted according to the type and size of the inspection device. (X in FIG. 2
(Length in the direction) may be increased, so that even if a plurality of inspection devices are incorporated here, the inspection station S
2 has a predetermined space. That is, the chemical unit C and the electric unit E can be secured below the first and second inspection units U1 and U2. Providing such a storage space for a chemical solution or an electric system is effective because the types of resists have increased in recent years, and the number of chemical solutions has increased accordingly.

Furthermore, if the ambient temperature around the inspection device is, for example, 30 ° C. or more, the inspection device has a bad influence on the measurement accuracy of the inspection device. Therefore, it is desirable that the inspection device is not disposed adjacent to the heating section 43 of the shelf unit R. In the above-described embodiment, the processing station S3 is laid out so as to secure a predetermined space in a portion adjacent to the first and second inspection units U1 and U2. There is an advantage that each inspection device incorporated in the processing station is hardly affected by the temperature of the processing station S3.

At this time, the first and second inspection units U
Even if U1 and U2 are laid out adjacent to the heating unit of the shelf unit R, the inspection station S2 is
Is separated from the processing station S3 by
Each inspection device is hardly affected by the temperature from the processing station S3.
6, the temperature and humidity can be adjusted to a predetermined value. In this case, the temperature and humidity of the surrounding environment can be adjusted to a predetermined range. Inspection can be performed. Note that the first and second inspection units U1 and U2 are connected to the shelf unit R.
When the layout is arranged so as to be adjacent to the heating unit, a heat insulating means, for example, a heat insulating material or a pipe through which temperature-regulated water flows may be provided between the inspection units U1 and U2 and the heating unit. Further, the environmental atmosphere such as temperature and humidity at the time of measurement in the inspection station S2 may be adjusted according to the measurement application. For example, the same environmental atmosphere as at the time of application processing, development processing, or exposure processing may be used. May be adjusted.

In the above-described embodiment, the example in which the film thickness inspection device 31 and the defect inspection device 32 are provided in the inspection station S2 as the inspection unit has been described. However, the inspection station S2 includes only the defect inspection device 32. In this case, there is an advantage that the inspection unit can be incorporated in the coating / developing apparatus without changing the process flow. That is, in the current coating / developing apparatus, the transfer flow of the wafer W is determined. Referring to FIG. 2, the wafer W before exposure is transferred from the cassette station S1 to the exposure apparatus S5 in the figure from left to right in the X direction. After the exposure, the wafer W is exposed to the
5 to the cassette station S1 from right to left in the X direction. Therefore, when an inspection unit that performs a predetermined inspection after the development processing is provided as in the defect inspection device 32,
If the inspection station S2 is provided between the cassette station S1 and the processing station S3, a predetermined inspection can be performed after the development processing without reversing the transfer flow of the wafer W described above.

Further, in the above-described example, the cassette station S1, the inspection station S2, the processing station S3, and the interface station S4 are provided so as to be freely separated from and separated from each other.
Since the cassette station S1 and the processing station S3 can be accessed even if they are inverted by 80 degrees, the versatility of the layout is enhanced. That is, the inspection station S2 may be laid out not only between the cassette station S1 and the processing station S3 but also between the processing station S3 and the interface station S4 as shown in FIG.

This configuration is a layout example for performing a predetermined inspection on the wafer W after resist application, and is substantially the same as the example shown in FIG. 1 except that the position of the inspection station S2 is different. Is the processing station S3
Between the inspection station S2 and the interface station S4, the wafer W is transferred by the substrate transfer means MA1 of the inspection station S2 via the transfer unit 46 of the shelf unit R2 of the processing station S3. Here, the transfer of the wafer W is performed via the transfer port 33 of the wall 34 by the transfer arm A of the interface station S4 via the transfer section 33 of the inspection station S2.

The wafer W is transferred in the next transfer flow. That is, the wafer W whose bare silicon film thickness has been measured in advance is transferred to the processing station S by the transfer arm 23.
The shelf unit R1 is placed in the transfer unit 46 of the shelf unit R1, then the hydrophobic unit 45 of the shelf unit R → the cooling unit 4 of the shelf unit R.
4 → conveyed along the route of the coating unit 42. The wafer W after application of the resist liquid is transferred by the substrate transfer means MA2 to the heating section 43 of the shelf unit R → the cooling section 44 of the shelf unit R → the transfer section 46 of the shelf unit R2, and then to the substrate transfer means MA1 of the inspection station S2. Is transported to a predetermined inspection device such as a film thickness inspection device 31 and a defect inspection device 32, and the thickness of the resist film, the coating unevenness of the resist solution,
A predetermined inspection such as a BR cut width is performed.

The wafer W thus inspected is transferred to the transfer section 33 by the substrate transfer means MA1, and the wafer W is received by the transfer arm A of the interface station S4 and transferred to the exposure apparatus S5.
Next, the exposed wafer W is transferred to the transfer arm A of the interface station S4, the transfer section 33 of the inspection station S2, the substrate transfer means MA1, and the processing station S.
The transfer unit 46 of the third shelf unit R2 → substrate transport means M
A2 → heating unit 43 of shelf unit R → cooling unit 44 of shelf unit R → developing unit 41 → heating unit 43 of shelf unit R
The cooling unit 44 of the shelf unit R is transported along the path of the transfer unit 46 of the shelf unit R1.

In this example, the exposed wafer W is moved from the interface station S4 to the inspection station S4.
The wafer W may be transferred to the processing station S3, where the inspection of the exposure state is performed, and then the wafer W is transferred to the processing station S3.

As described above, in this example, the inspection station S2 is provided so as to be able to freely contact and separate, and is disposed between the processing station S3 and the interface station S4.
For example, if the thickness of the bare silicon is measured in advance, a predetermined inspection can be performed after the application of the resist solution without reversing the transfer flow of the wafer W. On the other hand, in the layout in which the inspection station S2 is disposed between the cassette station S1 and the processing station S3, if a predetermined inspection is performed after the application of the resist liquid, the wafer W once transferred to the processing station S3 is The wafer W is returned to the inspection station S2, and the transfer flow of the wafer W is reversed.

FIG. 1 shows an example of a layout in which predetermined inspections are respectively performed after the application of the resist solution and after the development processing.
Description will be made based on 0. This configuration includes two processing stations, a first processing station S6 for applying a resist solution and a second processing station S7 for performing a developing process.
6, the cassette station S1, the first processing station S6, the inspection station S2, the second processing station S7, the interface station, so that the inspection station S2 is arranged between the cassette station S1 and the exposure apparatus S5. The layout is performed in the order of S4 and the exposure apparatus S5.

The first and second processing stations S6, S
7 is substantially the same as the processing station S2 described above, except that the processing units are each constituted by, for example, four coating units 42 forming a first substrate processing unit and a developing unit 41 forming a second substrate processing unit. It is configured. The inspection station S2 is also configured substantially in the same manner as the example shown in FIG. 1, but between the first processing station S6 and the inspection station S2 via the transfer unit 46 of the shelf unit R2 of the processing station S6. The wafer W is transferred by the substrate transfer means MA1 of the inspection station S2. Between the inspection station S2 and the second processing station S7, the substrate transfer means of the inspection station S2 is transferred via the transfer section 46 of the processing station S7. The transfer of the wafer W is performed by the MA1.

In such a configuration, the wafer W is transferred in the next transfer flow. In other words, the wafer W whose bare silicon film thickness has been measured in advance is placed on the transfer unit 46 of the shelf unit R1 of the first processing station S6 by the transfer arm 23, and then the hydrophobicity of the shelf unit R is transferred by the substrate transfer means MA2. Unit 45 → cooling unit 44 of shelf unit R
→ It is transported along the route of the coating unit 42. The wafer W after the application of the resist solution is transferred by the substrate transfer means MA2 along the route of the heating unit 43 of the shelf unit R → the cooling unit 43 of the shelf unit R → the transfer unit 46 of the shelf unit R2, and then the substrate of the inspection station S2. The wafer is transported to the station S2 by the transport means MA1, and the above-described predetermined inspection is performed by a predetermined inspection device such as the film thickness inspection device 31 and the defect inspection device 32.

The wafer W thus inspected is transferred to the transfer section 46 of the shelf unit R1 of the second processing station S7 by the substrate transfer means MA1, and the wafer W is transferred to the shelf by the substrate transfer means MA2 of this station S7. It is transferred to the transfer arm A of the interface station S4 via the transfer section 46 of the unit R2, and transferred to the exposure apparatus S5. Next, the wafer W after exposure is
The transfer arm A of the interface station S4 → the transfer unit 46 of the shelf unit R2 of the second processing station S7 → the substrate transfer means MA2 → the heating unit 4 of the shelf unit R
3 → cooling unit 44 of shelf unit R → developing unit 41 → heating unit 43 of shelf unit R → cooling unit 44 of shelf unit R →
It is transported along the path of the transfer unit 46 of the shelf unit R1.

Thereafter, the wafer W is transferred to the inspection station S2.
Is transported to a predetermined inspection device such as the film thickness inspection device 31 and the defect inspection device 32 of the station S2 by the substrate transport means MA1, and a predetermined inspection is performed by each inspection device.

The wafer W after the inspection is transferred to the transfer unit 46 of the shelf unit R2 of the first processing station S6 by the substrate transfer means MA1 of the inspection station S2, and then transferred to the transfer unit 46 of the shelf unit R1 by the substrate transfer means MA2. For example, the original is conveyed to the original cassette 22 via the cartridge 46.

As described above, in this example, the inspection station S2 is provided so as to be capable of coming and going, and is disposed between the first processing station S6 and the second processing station S7.
If the thickness of the bare silicon is measured in advance, a predetermined inspection can be performed after the application of the resist liquid and after the development processing without reversing the transfer flow of the wafer W.

In the above, according to the present invention, two inspection stations S2 are prepared and the cassette stations S1 to X
In the direction, the first inspection station S2, the processing station S3, the second inspection station S2, the interface station S4, and the exposure apparatus S5 may be arranged in this order. In this case, first, the thickness of bare silicon is measured by the film thickness inspection apparatus 31 of the first inspection station S2, and then the hydrophobic processing and the resist liquid application processing are performed at the processing station S3. At the second inspection station S2, a predetermined inspection after resist application is performed.

Next, the wafer W is transferred to the exposure apparatus S5 via the interface station S4 to perform exposure, and the exposed wafer W is exposed at the second inspection station S2 via the interface station S4. An inspection is performed. Thereafter, the developing process is performed on the wafer W at the processing station S3, and then a predetermined inspection after the development is performed at the first inspection station S2. In such a configuration, the wafer W is stored in the cassette station S1 → the first inspection station S2 → the processing station S3 → the second inspection station S2 → the exposure apparatus S5 → the second inspection station → the processing station S3 → the first inspection. Since the wafer W is transported along the route from the station S2 to the cassette station S1, a predetermined inspection can be performed without reversing the wafer W transport flow from the cassette station S1 to the exposure device S5 to the cassette station S1.

In the present invention, three inspection stations S2 are prepared, and the cassette station S1 is moved in the X direction.
A first inspection station S2, a first processing station S6 for performing a resist coating process, a second inspection station S2, a second processing station S7 for performing a development process,
The third inspection station S2, the interface station S4, and the exposure apparatus S5 may be arranged in this order.

In this case, the thickness of the bare silicon film is first measured by the film thickness inspection device 31 of the first inspection station S2, and then the wafer W is subjected to the hydrophobic treatment and the resist solution in the first processing station S6. The coating process is performed, and the second inspection station S2 (or the third inspection station S2)
A predetermined inspection after resist application is performed.

Next, the wafer W is transferred to the exposure apparatus S5 via the second processing station S7 and the interface station S4, and exposure is performed. The exposed state of the exposed wafer W is inspected at the third inspection station S2 via the interface station S4. Thereafter, the wafer W is subjected to a development process at a second processing station S7, and then to a second inspection station S2.
(Or a first inspection station S2), a predetermined inspection after development is performed. Even in such a configuration, a predetermined inspection can be performed without reversing the transfer flow of the wafer W.

Further, in the present invention, two inspection stations S2 are prepared, the first processing station S6 for applying a resist coating process from the cassette station S1 in the X direction, the first inspection station S2, and the developing process are performed. Second processing station S7, second inspection station S2, interface station S4, exposure apparatus S
5 may be arranged.

In this case, the wafer W whose bare silicon film thickness has been measured in advance is subjected to a hydrophobic treatment and a resist solution coating treatment in the first processing station S6, and the first inspection station S2 (or the second inspection station S2) is processed. In the inspection station S2), a predetermined inspection after resist application is performed.

Next, the wafer W is transferred to the exposure apparatus S5 via the second processing station S7 and the interface station S4, and exposure is performed. The exposed state of the exposed wafer W is inspected at the second inspection station S2 via the interface station S4. Thereafter, the wafer W is subjected to a development process at a second processing station S7, and then to a first inspection station S2.
A predetermined inspection after development is performed. Even in such a configuration, without reversing the transfer flow of the wafer W,
A predetermined inspection can be performed.

In the above description, the present invention relates to the cassette station S1, the processing station S3, and the inspection station S.
2. If the inspection station S2 is configured to inspect the processing state of the coating and developing processing of the resist liquid on the wafer W processed in the processing station S3, how the layout is configured Is also good.

At this time, the inspection station S2 may have one or a plurality of inspection devices. The types of the inspection devices include a particle counter, an EBR width measurement, a WEE width measurement, as well as a film thickness measurement device and a defect device. An apparatus for inspecting uneven coating, uneven developing, uncoated area, undeveloped area, line width measurement, exposure focus shift and the like may be provided.
Further, as the storage unit provided by utilizing the space of the inspection station, all of the storage units may be used as the chemical unit C or all may be used as the electric unit E according to the type of the film formed on the wafer W. You may.

Further, the substrate transfer means MA1 is not provided in the inspection station S2, and the transfer of the wafer W in the station S2 is performed by the transfer arm 23 of the cassette station S1 or the substrate transfer means M of the processing station S2.
A2 may be used.

Further, if the inspection station S2 is provided so as to be able to freely contact and separate from the cassette station S1, the processing station S3, and the like, the inspection station S2 does not need to be configured so as to be separated from the surroundings by the wall portion 34. It is not always necessary to adjust the atmosphere inside to a predetermined temperature and humidity.

Further, instead of performing the hydrophobic treatment on the wafer surface as in the above-described example, an anti-reflection film may be formed. The substrate is not limited to the wafer, but may be a glass substrate for a liquid crystal display. You may.

[0080]

According to the present invention, by connecting an inspection station having an inspection section to a processing station to constitute a substrate processing apparatus, the operation from substrate processing to inspection is simplified and the time is shortened. be able to.

[Brief description of the drawings]

FIG. 1 is a schematic view showing a coating and developing apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic plan view showing the coating and developing device.

FIG. 3 is a perspective view showing an inspection station of the coating and developing apparatus.

FIG. 4 is a sectional view showing the inspection station.

FIG. 5 is a cross-sectional view illustrating an example of an inspection unit.

FIG. 6 is a side view showing an example of a first inspection unit, a shelf unit, and a processing unit.

FIG. 7 is a cross-sectional view showing a coating unit.

FIG. 8 is a perspective view showing a substrate transport unit.

FIG. 9 is a schematic plan view showing a coating and developing apparatus according to another embodiment of the present invention.

FIG. 10 shows a coating according to still another embodiment of the present invention;
FIG. 2 is a schematic plan view showing a developing device.

FIG. 11 is a schematic plan view showing a conventional coating and developing apparatus.

[Explanation of symbols]

 W Semiconductor wafer S1 Cassette station S2 Inspection station S3 Processing station S4 Interface station S5 Exposure device S6 First processing station S7 Second processing station C Chemical unit E Electric unit 31 Film thickness inspection device 32 Defect inspection Apparatus 33 Delivery unit 41 Developing unit 42 Coating unit MA1, MA2 Substrate transfer means

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Hidehiko Kamiya 2655 Tsukure, Kikuyo-cho, Kikuchi-gun, Kikuchi-gun, Kumamoto F-term (reference) 2K025 AA18 AB16 AB20 EA05 EA10 5F031 CA02 CA05 DA01 FA01 FA07 FA11 FA12 FA15 GA03 GA47 GA48 GA49 HA59 JA02 JA04 JA06 JA13 JA32 JA33 MA02 MA03 MA09 MA24 MA26 MA33 NA03 NA16 5F046 AA21 CD01 CD05 JA04 JA21 LA01

Claims (19)

[Claims] 1. A cassette stay comprising: a mounting portion for mounting a substrate cassette containing a plurality of substrates; and a transfer means for transferring a substrate to and from the substrate cassette mounted on the mounting portion. And a processing station including a substrate processing unit for applying a processing liquid to the substrate transported from the cassette station. The processing station is connected to the processing station, and
A substrate processing apparatus, comprising: an inspection station including an inspection unit that inspects a processing state of the substrate processing unit; and a substrate transport unit that transfers a substrate between the processing station and the inspection station. 2. The inspection station and the processing station are arranged side by side, and a width of the inspection station in a direction substantially orthogonal to the arrangement direction is not larger than a width of the processing station in a direction substantially orthogonal to the arrangement direction. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is configured as follows. 3. The substrate processing apparatus according to claim 1, wherein the inspection station is connected to the processing station in a direction substantially orthogonal to an arrangement direction of the substrate cassettes in the cassette station. 4. The substrate processing apparatus according to claim 1, wherein the inspection station is configured to be able to contact and separate from the cassette station and / or the processing station. 5. The substrate processing apparatus according to claim 1, wherein the inspection station includes a plurality of types of inspection units. 6. The substrate processing apparatus according to claim 1, wherein the inspection station includes a storage section for storing a member used in the substrate processing section. 7. The substrate processing apparatus according to claim 1, wherein the inspection station includes a substrate transfer unit for transferring a substrate to and from a processing station. 8. The substrate processing apparatus according to claim 1, wherein the inspection station includes a substrate transfer unit. 9. The substrate according to claim 1, wherein the inspection station includes a substrate transfer unit for transferring the substrate to and from a transfer unit of the cassette station. Processing equipment. 10. The inspection station, wherein the inspection unit comprises:
The substrate processing apparatus according to any one of claims 1 to 9, wherein the inspection stations are arranged symmetrically through a line that bisects the inspection stations in the arrangement direction of the inspection stations. 11. The substrate according to claim 1, wherein the inspection station includes an adjustment unit for adjusting the inside of the inspection station to a predetermined temperature and / or humidity. Processing equipment. 12. The cassette station, the processing station, and the inspection station are arranged in a direction substantially orthogonal to the arrangement direction of the substrate cassettes in the cassette station, and the inspection station is provided between the cassette station and the processing station. The substrate processing apparatus according to any one of claims 1 to 11, wherein the substrate processing apparatus is used. 13. The cassette station, the processing station, and the inspection station are arranged in a direction substantially orthogonal to the arrangement direction of the substrate cassettes in the cassette station, and the processing station is provided between the cassette station and the inspection station. The substrate processing apparatus according to any one of claims 1 to 12, wherein the substrate is processed. 14. A first processing station including a first substrate processing unit for applying a first processing liquid to a substrate transported from the cassette station, and a first processing station including a first substrate processing unit for applying a first processing liquid to the substrate transported from the cassette station. A second processing station including a second substrate processing section for applying a second processing liquid to the cassette station, the first processing station, the second processing station, and the inspection station. Are arranged in a direction substantially perpendicular to the arrangement direction of the substrate cassettes in the cassette station, wherein the inspection station is provided between a first processing station and a second processing station. 14. The substrate processing apparatus according to any one of 13. 15. At least one of the substrate processing units of the processing station performs a developing process by applying a developing solution to a substrate that has been coated with a resist solution and is exposed to light. At least one of the apparatuses is for inspecting the processing state of the development processing on the substrate, wherein the cassette station, the processing station, and the inspection station are arranged in a direction substantially orthogonal to the arrangement direction of the substrate cassettes in the cassette station. 15. The substrate processing apparatus according to claim 1, wherein the inspection stations are arranged, and the inspection stations are provided between the cassette station and the processing station. 16. At least one of the substrate processing units of the processing station is for applying a resist liquid to the substrate, and at least one of the inspection apparatuses of the inspection station is configured to apply the resist liquid to the substrate. The cassette station, the processing station, and the inspection station are arranged in a direction substantially orthogonal to the arrangement direction of the substrate cassettes in the cassette station; and the processing station includes the cassette station and the inspection station. The substrate processing apparatus according to any one of claims 1 to 15, wherein the substrate processing apparatus is provided between the substrate processing apparatus and the substrate processing apparatus. 17. A first processing station including a first substrate processing section for applying a resist solution to a substrate transported from the cassette station, and developing the substrate transported from the cassette station. A second processing station including a second substrate processing unit for applying a liquid, wherein the cassette station, the first processing station, the second processing station, and the inspection station include a substrate of the cassette station. 17. The inspection station is arranged in a direction substantially orthogonal to the arrangement direction of the cassettes, and the inspection station is provided between a first processing station and a second processing station. Substrate processing equipment. 18. The substrate processing apparatus according to claim 1, wherein the inspection unit measures a thickness of a coating film formed on the substrate. 19. The substrate processing apparatus according to claim 1, wherein the inspection unit inspects a surface state of a coating film formed on the substrate.