JP2002025372A - Switching device - Google Patents
Switching deviceInfo
- Publication number
- JP2002025372A JP2002025372A JP2001157200A JP2001157200A JP2002025372A JP 2002025372 A JP2002025372 A JP 2002025372A JP 2001157200 A JP2001157200 A JP 2001157200A JP 2001157200 A JP2001157200 A JP 2001157200A JP 2002025372 A JP2002025372 A JP 2002025372A
- Authority
- JP
- Japan
- Prior art keywords
- electric field
- insulating layer
- conductor
- field strength
- center conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えばスイッチギ
ヤに用いられる電気機器の主回路導体の口出し部に関係
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead portion of a main circuit conductor of an electric device used for, for example, a switchgear.
【０００２】[0002]
【従来の技術】受配電設備であるスイッチギヤの一例と
して、ガス絶縁開閉装置の構成図を図６に示す。同図に
おいて、外周を金属で気密に囲まれた箱体１の内部は、
図示左方の前面寄りに縦に設けられた隔壁２で前方の遮
断器室１ａと後方の母線室１ｂに仕切られ、各室１ａ，
１ｂには例えば六フッ化硫黄ガス（以下、絶縁ガスとい
う）が封入されている。2. Description of the Related Art FIG. 6 shows a configuration diagram of a gas insulated switchgear as an example of a switchgear as a power receiving and distributing facility. In the figure, the inside of a box 1 whose outer periphery is hermetically surrounded by metal is
A breaker room 1a at the front and a busbar room 1b at the rear are partitioned by a partition wall 2 provided vertically near the left front side in the figure.
1b is filled with, for example, sulfur hexafluoride gas (hereinafter referred to as insulating gas).
【０００３】このうち、遮断器室１ａの内部には遮断器
３が収納され、隔壁２には図示していない貫通穴に絶縁
スペーサ９が取付けられ、この前面には遮断器３が連結
されている。The circuit breaker 3 is housed in the circuit breaker room 1a, an insulating spacer 9 is attached to a through hole (not shown) in the partition 2, and the circuit breaker 3 is connected to the front surface. I have.
【０００４】また母線室１ｂの天井部には、前側の端子
部が接続導体８を介して上側の絶縁スペーサ９の後部に
接続された断路器４Ａが取付けられ、この断路器４Ａの
後部の端子部は、接続導体８を介して後方の碍子６に取
付けられた母線５に接続されている。この母線５により
隣接盤への接続が行われる。A disconnector 4A whose front terminal is connected to the rear of the upper insulating spacer 9 via a connecting conductor 8 is attached to the ceiling of the busbar room 1b. Terminals at the rear of the disconnector 4A are attached. The portion is connected to a bus bar 5 attached to a rear insulator 6 via a connection conductor 8. The bus 5 connects to an adjacent board.
【０００５】一方、母線室１ｂの底部には、前側の端子
部が接続導体８を介して下側の絶縁スペーサ９の後部に
接続された断路器４Ａと略同形の断路器４Ｂが取付けら
れ、この断路器４Ｂの後部の端子部は、接続導体８を介
して底部の後方に取付けられたケーブルヘッド７の上部
端子へ接続されている。On the other hand, a disconnector 4B having substantially the same shape as the disconnector 4A whose front terminal is connected to the rear of the lower insulating spacer 9 via the connecting conductor 8 is attached to the bottom of the busbar chamber 1b. The rear terminal portion of the disconnector 4B is connected via a connecting conductor 8 to an upper terminal of a cable head 7 mounted behind the bottom.
【０００６】さらに、図７に図６の絶縁スペーサ９の横
断面図を示す。同図において、中心導体１０を例えばエ
ポキシ樹脂より成る絶縁材料で一体で注形した絶縁層１
１の略中央部は、隔壁２に取付けられたフランジ１２に
固定されている。また、フランジ１２先端部の電界緩和
のため、絶縁層１１側とは略Ｕ字形を横配置したＵ字溝
１１ａがフランジ１２と対向して設けられ、さらに導電
塗料等より成る接地層１３が施されている。なお、中心
導体１０と周囲の絶縁ガスと接する絶縁層端部１１ｂ
は、例えば実開昭６４−３８７１７に示されているよう
に、絶縁層１１ｂの角度θが約９０度になっている。こ
れは、略中央部の絶縁層１１の絶縁厚さと中心導体１０
導出部付近の絶縁厚さを略同様として絶縁層１１の貫通
方向の絶縁耐力を均一にすると共に、沿面絶縁距離を伸
ばすためである。FIG. 7 is a cross-sectional view of the insulating spacer 9 shown in FIG. In the figure, an insulating layer 1 is formed by integrally casting a center conductor 10 with an insulating material made of, for example, epoxy resin.
A substantially central portion of 1 is fixed to a flange 12 attached to the partition 2. In order to alleviate the electric field at the end of the flange 12, a U-shaped groove 11a having a substantially U-shape arranged laterally from the insulating layer 11 side is provided facing the flange 12, and a ground layer 13 made of a conductive paint or the like is provided. Have been. In addition, the end portion 11b of the insulating layer in contact with the center conductor 10 and the surrounding insulating gas.
The angle θ of the insulating layer 11b is about 90 degrees, as shown in, for example, Japanese Utility Model Laid-Open No. 64-38717. This is because the insulating thickness of the insulating layer 11 at the substantially central portion and the central conductor 10
This is because the insulation thickness in the vicinity of the lead-out portion is made substantially the same so that the dielectric strength of the insulation layer 11 in the penetration direction is made uniform and the creepage insulation distance is increased.
【０００７】一方、絶縁層１１の比誘電率は、エポキシ
樹脂の場合においては約５であり、また周囲の絶縁ガス
の比誘電率は約１である。つまり、絶縁層の沿面では、
比誘電率が異なることになる。On the other hand, the relative permittivity of the insulating layer 11 is about 5 in the case of epoxy resin, and the relative permittivity of the surrounding insulating gas is about 1. In other words, on the surface of the insulating layer,
The relative permittivity will be different.
【０００８】[0008]
【発明が解決しようとする課題】このように２つ以上の
絶縁媒体が異なる比誘電率であると、この境界の等電位
線が屈折し、電界強度が乱れることになる。つまり、絶
縁層１１の沿面では電界強度が乱れることになる。この
成分をみると、絶縁層１１の角度θが約９０度であるた
め、中心導体１０近傍の沿面では殆どが接線方向とな
り、法線方向は小さい。When the two or more insulating media have different relative dielectric constants as described above, the equipotential lines at the boundary are refracted, and the electric field intensity is disturbed. That is, the electric field strength is disturbed on the surface of the insulating layer 11. Looking at this component, since the angle θ of the insulating layer 11 is about 90 degrees, almost the tangential direction is along the surface near the center conductor 10 and the normal direction is small.
【０００９】一般に破壊電圧は電界強度に大きく左右さ
れ、その成分として法線方向が破壊電界になり、接線方
向は沿面を進展する維持電界となる。このため、破壊電
界が小さく破壊電圧が上昇することが考えられるが、接
線方向の電界強度が大きいと沿面のストリーマが容易に
伸び易い。さらに、沿面にはゴミ等が付着しやすいので
ストリーマは更に伸び易くなり、そのため沿面の電界強
度を更に乱して結果的に破壊電圧を下げることになる。In general, the breakdown voltage largely depends on the electric field strength. The components of the breakdown voltage are the breakdown electric field in the normal direction and the sustaining electric field in the tangential direction along the creeping surface. For this reason, it is conceivable that the breakdown electric field is small and the breakdown voltage increases. However, if the electric field strength in the tangential direction is large, the streamer on the creeping surface is easily extended. Furthermore, since the dust and the like easily adhere to the creepage surface, the streamer is further easily stretched, so that the electric field intensity on the creepage surface is further disturbed, and as a result, the breakdown voltage is reduced.
【００１０】なお、絶縁層１１の沿面が十分に長い場合
には電界強度の絶対値が許容値に対し低いため、接線方
向の成分が多くても破壊電圧を下げることがない。しか
し、沿面距離を短くして小形化を図る場合には、沿面の
電界強度は許容値を超えることはないが近づくことにな
る。従って、沿面には容易にゴミ等が付着し、完全に清
浄な表面状態を保つことができないので、接線方向の電
界強度が大きいと沿面のストリーマが伸び易くなり、破
壊電圧を低下させることになる。このため、沿面距離を
比較的大きくすることにより、沿面の進展電界強度を許
容値に対してある一定の割合以上に抑制しているので、
縮小化は困難であった。この様に、一つの収納機器の絶
縁距離が大形化すると他の収納機器にも波及し、結果的
に装置の全体形状が大形化してしまう。When the surface of the insulating layer 11 is sufficiently long, the absolute value of the electric field strength is lower than the allowable value, so that the breakdown voltage does not decrease even if the component in the tangential direction is large. However, when the creepage distance is reduced and the size is reduced, the creepage electric field strength does not exceed the allowable value but approaches. Accordingly, dust and the like easily adhere to the creepage surface, and a completely clean surface state cannot be maintained. Therefore, if the electric field strength in the tangential direction is large, the streamer on the creepage surface is easily elongated, and the breakdown voltage is reduced. . For this reason, by making the creepage distance relatively large, the developed electric field strength of the creepage is suppressed to a certain ratio or more with respect to the allowable value,
Miniaturization was difficult. In this way, if the insulation distance of one storage device is increased, it spreads to other storage devices, and as a result, the overall shape of the device is increased.
【００１１】本発明の目的は、破壊電圧を向上させた電
気機器の主回路導体口出し部を提供することにある。An object of the present invention is to provide a main circuit conductor lead-out portion of an electric device with improved breakdown voltage.
【００１２】[0012]
【課題を解決するための手段】上記目的を達成するため
に第１の発明は、中心導体を絶縁物で注形し、少なくと
も中心導体近傍の絶縁層沿面の法線方向の電界強度を接
線方向の電界強度よりも大きくしたことを要旨とする。According to a first aspect of the present invention, a central conductor is cast with an insulator, and the electric field strength in the direction normal to the surface of the insulating layer near at least the central conductor is reduced in the tangential direction. The gist is that the electric field strength is larger than the electric field strength.
【００１３】また第２の発明では、中心導体を絶縁物で
注形し、この絶縁層沿面と中心導体の軸とのなす角度５
０度以下であることを要旨とする。In the second invention, the center conductor is cast with an insulator, and an angle 5 between the surface of the insulating layer and the axis of the center conductor is formed.
The gist should be 0 degrees or less.
【００１４】さらに第３の発明は、中心導体を絶縁物で
注形し、前記中心導体と絶縁物が接する領域での両者の
なす角度が５０度以下であるモールドブッシングであ
る。According to a third aspect of the present invention, there is provided a mold bushing in which a center conductor is cast with an insulator, and an angle between the center conductor and the insulator in an area where the center conductor and the insulator contact each other is 50 degrees or less.
【００１５】これらの構成において、少なくとも中心導
体近傍の絶縁層沿面の法線方向の電界強度を接線方向の
電界強度以上にしたので、破壊電圧を向上させることが
できる。In these configurations, since the electric field strength in the normal direction at least on the surface of the insulating layer near the center conductor is higher than the electric field strength in the tangential direction, the breakdown voltage can be improved.
【００１６】すなわち、中心導体に対し絶縁層の角度が
９０度であれば、等電位線がほぼ直角に交差するので絶
縁層沿面では接線方向の成分が大きくなる。逆に絶縁層
の角度がほぼ０度であれば、法線方向の成分が大きくな
る。この角度を全角において電界強度の成分をみると、
ある角度において互いの成分が交わる点が生じる。この
点においては、電界強度の絶対値が抑えられると共に、
互いの成分が最小値になる点であり、破壊電圧の向上が
図れる。That is, if the angle of the insulating layer with respect to the center conductor is 90 degrees, equipotential lines intersect at a substantially right angle, so that the tangential component increases along the insulating layer surface. Conversely, if the angle of the insulating layer is almost 0 degrees, the component in the normal direction becomes large. Looking at the component of the electric field strength at this angle at all angles,
At a certain angle, a point where the components intersect occurs. In this regard, while the absolute value of the electric field strength is suppressed,
This is the point where the mutual components are at the minimum value, and the breakdown voltage can be improved.
【００１７】[0017]
【発明の実施の形態】以下、本発明の一実施例を図面を
用いて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings.
【００１８】図１は、図６における絶縁スペーサ９の横
断面図である。中心導体１０の周囲にはエポキシ樹脂等
より成る絶縁材料が注形された絶縁層１４が形成され、
絶縁層１４の略中央部はフランジ１２に固定されてい
る。また、接地側の絶縁層１４にはＵ字溝１４ａがフラ
ンジ１２に対向して設けられ、Ｕ字溝１４ａには導電塗
料より成る接地層１３が施こされ接地側の電界緩和がさ
れていることは従来と同様である。ここで、中心導体１
０と接する絶縁層端部１４ｂの角度θは５０度以下とし
ている。なお、絶縁層１４の比誘電率は約５であり、周
囲の絶縁ガスは比誘電率１である。FIG. 1 is a cross-sectional view of the insulating spacer 9 in FIG. An insulating layer 14 in which an insulating material such as epoxy resin is cast is formed around the center conductor 10.
A substantially central portion of the insulating layer 14 is fixed to the flange 12. A U-shaped groove 14a is provided on the ground-side insulating layer 14 so as to face the flange 12, and a ground layer 13 made of a conductive paint is applied to the U-shaped groove 14a to mitigate the electric field on the ground side. This is the same as before. Here, the center conductor 1
The angle θ of the insulating layer end 14b in contact with 0 is set to 50 degrees or less. The insulating layer 14 has a relative dielectric constant of about 5, and the surrounding insulating gas has a relative dielectric constant of 1.
【００１９】このような構成における絶縁層１４の沿面
の電界強度分布を図２、図３に示す。図２は絶縁層１４
の角度を変化させたときの電界強度の特性図であり、図
３は電界強度の成分を説明するための電界強度のベクト
ル図である。図３では、電界強度の絶対値ＥＯに対し、
法線方向の電界強度をＥH、接線方向の電界強度をＥSと
している。また、θは中心導体１０と接する絶縁層１４
の角度である。FIGS. 2 and 3 show the electric field intensity distribution along the surface of the insulating layer 14 in such a configuration. FIG. 2 shows the insulating layer 14.
FIG. 3 is a characteristic diagram of the electric field strength when the angle is changed, and FIG. 3 is a vector diagram of the electric field strength for explaining the components of the electric field strength. In FIG. 3, with respect to the absolute value E O of the electric field strength,
The electric field strength in the normal direction is E H , and the electric field strength in the tangential direction is E S. Θ is the insulating layer 14 in contact with the center conductor 10.
Angle.
【００２０】これらの図において、絶縁層１４の角度に
より電界強度が変化することがわかる。すなわち、角度
θが大きくなると絶対値Ｅ0が略５０度以上より急激に
上昇し、これに伴いＥSも同様に上昇する。逆に、ＥHは
角度θが大きくなると小さくなり、ＥSとＥHは角度θが
５０度で交差する。また、θが５０度以上ではＥS＞ＥH
となり、θ＝５０度以下ではＥS＜ＥHとなる。In these figures, it can be seen that the electric field intensity changes depending on the angle of the insulating layer 14. That is, as the angle θ increases, the absolute value E 0 increases more rapidly than approximately 50 degrees or more, and accordingly, E S also increases. Conversely, E H decreases as the angle θ increases, and E S and E H intersect at an angle θ of 50 degrees. When θ is 50 degrees or more, E S > E H
Next, the E S <E H at theta = 50 degrees or less.
【００２１】これにより、沿面の放電進展電界であるＥ
Sを抑えるには、角度θを５０度以下にする必要があ
り、この場合、破壊電圧はＥHで左右されることにな
る。このため、沿面が若干のゴミや凹凸による表面状態
でもストリーマが伸展することを防げ、沿面の電界強度
を乱すことがなくなる。そして、破壊電圧は、ＥHで左
右され、電界強度と破壊電圧を一致させることができ
る。ここで、逆に角度θを５０度以上にすると、ＥHは
下がって見かけ上破壊電圧が上昇するように思われる
が、沿面では放電が進展して電界強度を乱し、結果的に
破壊電圧が低下することになる。As a result, the discharge developing electric field on the surface, E,
In order to suppress S , the angle θ needs to be 50 degrees or less, and in this case, the breakdown voltage depends on E H. For this reason, even if the creeping surface is slightly dusty or uneven, the streamer can be prevented from extending, and the electric field intensity on the creeping surface is not disturbed. The breakdown voltage depends on E H , and the electric field strength and the breakdown voltage can be matched. Here, when the angle θ is set to 50 degrees or more, E H decreases and the breakdown voltage seems to increase, but the discharge develops on the surface and the electric field intensity is disturbed. As a result, the breakdown voltage increases. Will decrease.
【００２２】これらのことにより、角度θ＝５０度以下
においては沿面の放電の進展が防げるので、許容電界強
度付近まで電界強度を上昇させることができる。つま
り、絶縁耐力を良好に維持できるので、沿面の絶縁距離
を短くでき、絶縁スペーサ９の小形化が図れる。なお、
中心導体１０の直径と接地層１３の外径および電界緩和
のＵ字溝１４ｂの最適形状を求めれば、沿面の電界強度
を中心導体１０から接地層１３まで略同等値にできて大
幅な縮小化が図れるが、一般的には、中心導体１０の電
界強度が接地層１３より高くなるので、高電圧側の電界
強度の成分の平衡を図れば効果的な縮小化が図れる。As a result, when the angle θ is equal to or less than 50 degrees, the discharge on the creeping surface can be prevented from developing, so that the electric field intensity can be increased to near the allowable electric field intensity. That is, since the dielectric strength can be maintained satisfactorily, the insulation distance on the creeping surface can be shortened, and the size of the insulating spacer 9 can be reduced. In addition,
If the diameter of the center conductor 10 and the outer diameter of the ground layer 13 and the optimum shape of the U-shaped groove 14b for alleviating the electric field are determined, the electric field strength on the creeping surface can be made substantially equal from the center conductor 10 to the ground layer 13 and greatly reduced. However, since the electric field strength of the center conductor 10 is generally higher than that of the ground layer 13, effective miniaturization can be achieved by balancing the electric field strength components on the high voltage side.
【００２３】次に、接地側に二次巻線を装着した貫通形
ブッシングを図４に示すが、中心導体１５と二次巻線１
６を一体で注形する絶縁層１７において、中心導体１５
が導出する絶縁層１７ａの角度を５０度以下にすること
により、沿面の電界強度の成分を法線方向と接地方向を
平衡させることができる。なお、１８は接触子であり、
また、１９は他の機器へ接続する接続導体である。この
ようなブッシングにおいては、埋込み金属が大きいので
絶縁層１７はゴム状等のやわらかい材料を用いることが
ある。この場合、比誘電率は例えばシリコーンゴムで２
〜３であるが、絶縁層１７と周囲の絶縁媒体の比誘電率
が異なっているので、沿面では等電位線が屈折して電界
強度が乱れる。このような低い方の比誘電率の沿面で
は、電界強度の成分の平衡を図ることにより、沿面の放
電進展を防ぐことができる。また、接地側に二次巻線１
６があり、中心導体１５との電界強度分布が一般のモー
ルドブッシングと異なる場合においても、沿面のうちの
電界強度の高い高電圧側の電界強度を抑制して成分を平
衡させれば、絶縁耐力の向上が図れる。FIG. 4 shows a through-type bushing in which a secondary winding is mounted on the ground side.
In the insulating layer 17 for integrally casting the center conductor 6, the central conductor 15
By setting the angle of the insulating layer 17a derived from the angle to be equal to or less than 50 degrees, the component of the electric field intensity on the creeping surface can be balanced between the normal direction and the ground direction. In addition, 18 is a contact,
Reference numeral 19 denotes a connection conductor for connecting to another device. In such a bushing, since the buried metal is large, the insulating layer 17 may use a soft material such as rubber. In this case, the relative dielectric constant is, for example, 2 with silicone rubber.
However, since the relative dielectric constants of the insulating layer 17 and the surrounding insulating medium are different, the equipotential lines are refracted on the surface and the electric field strength is disturbed. In such a creeping surface with a lower relative dielectric constant, the progress of discharge on the creeping surface can be prevented by balancing the components of the electric field intensity. The secondary winding 1 is connected to the ground side.
6, even when the electric field strength distribution with the center conductor 15 is different from that of a general mold bushing, if the electric field strength on the high voltage side of the creeping surface where the electric field strength is high is suppressed and the components are balanced, the dielectric strength can be improved. Can be improved.
【００２４】図５は、計器用変成器の場合である。一次
巻線２０と二次巻線２１、および一次巻線２０を導出す
る主回路リード線２２を一括して注形し、絶縁層２３を
形成する場合においても、主回路リード線２２の口出し
部の絶縁層端部２３ａの角度を５０度以下にすることに
より、沿面の電界強度を抑制することができる。主回路
リード線２２は、一般的に通電容量が少ないことによ
り、より線を用いた被覆電線であり、被覆２４が設けら
れているが、この様な被合絶縁構造においても絶縁層端
部２３ａの電界強度の成分を平衡させ抑制することがで
きる。絶縁ガスの比誘電率約１に比べて絶縁層２３およ
び被覆２４の比誘電率が大きく、絶縁層２３の沿面での
等電位線の屈折が大きくなって電界強度を乱すが、各絶
縁媒体の絶縁耐力は絶縁耐力は絶縁層２３や被覆２４が
数１０kV/mmと高いのに比べて、絶縁ガスでは大気圧の
ガス圧力で８．９kV/mmと低いため、沿面の絶縁破壊が
絶縁ガスで決まり、この絶縁層端部２３ａの電界強度で
破壊電圧が左右される。なお、２５は、二次巻線より電
圧を検出する二次端子である。FIG. 5 shows the case of an instrument transformer. In the case where the primary winding 20 and the secondary winding 21 and the main circuit lead wire 22 for leading the primary winding 20 are cast at a time and the insulating layer 23 is formed, the lead portion of the main circuit lead wire 22 is formed. By setting the angle of the insulating layer end 23a to 50 degrees or less, the electric field intensity on the creeping surface can be suppressed. The main circuit lead wire 22 is generally a covered electric wire using a stranded wire due to a small current carrying capacity, and is provided with a coating 24. However, even in such a mated insulating structure, the insulating layer end 23a is formed. Can be balanced and suppressed. The relative permittivity of the insulating layer 23 and the coating 24 is higher than the relative permittivity of the insulating gas of about 1, and the refraction of equipotential lines on the surface of the insulating layer 23 increases to disturb the electric field strength. The dielectric strength of the insulating layer 23 and the coating 24 is as high as several tens of kV / mm, whereas the dielectric strength of the insulating gas is as low as 8.9 kV / mm at atmospheric gas pressure. The breakdown voltage depends on the electric field strength of the insulating layer end 23a. Reference numeral 25 denotes a secondary terminal for detecting a voltage from the secondary winding.
【００２５】他の実施例として、空気やＮ2ガスなどを
用いた絶縁媒体中においても、絶縁物に対して比誘電率
が小さく、また絶縁耐力が小さいので、主回路導体の口
出し部にあたる絶縁物の角度を５０度以下にすれば、法
線方向と接線方向の電界強度が平衡され、電界強度を抑
制して破壊電圧の向上が図れ、効果的に縮小化を図るこ
とができる。As another embodiment, even in an insulating medium using air, N 2 gas, or the like, since the dielectric constant is small relative to the insulator and the dielectric strength is small, the insulating material corresponding to the lead-out portion of the main circuit conductor is used. If the angle of the object is 50 degrees or less, the electric field strengths in the normal direction and the tangential direction are balanced, the electric field strength is suppressed, the breakdown voltage is improved, and the size can be effectively reduced.
【００２６】[0026]
【発明の効果】以上のように第１の発明、第２の発明に
よれば、中心導体近傍の絶縁層沿面の電界強度の成分に
ついて、法線方向の成分を接線方向成分以上にしたの
で、電界強度が抑制されて絶縁物沿面の破壊電圧を向上
させた電気機器の主回路導体口出し部を得ることができ
る。As described above, according to the first and second aspects of the present invention, the component of the electric field strength on the surface of the insulating layer near the center conductor is made larger than the tangential component in the normal direction. It is possible to obtain a main circuit conductor lead portion of an electric device in which the electric field strength is suppressed and the breakdown voltage on the surface of the insulator is improved.
【００２７】さらに第３の発明によれば、中心導体と絶
縁物が接する領域での両者のなす角度を５０度以下にし
たので、絶縁耐力に優れたモールドブッシングを得るこ
とができる。According to the third aspect of the present invention, the angle formed between the center conductor and the insulator in the region where the two are in contact with each other is set to 50 degrees or less, so that a mold bushing having excellent dielectric strength can be obtained.
【図１】本発明の一実施例を示す絶縁スペーサの横断面
図。FIG. 1 is a cross-sectional view of an insulating spacer showing one embodiment of the present invention.
【図２】[図１]の特性を説明するための図。FIG. 2 is a diagram for explaining the characteristics of FIG. 1;
【図３】[図１]の特性を説明するための図。FIG. 3 is a diagram for explaining the characteristics of FIG. 1;
【図４】本発明の他の実施例を示す貫通形ブッシングの
要部拡大断面図。FIG. 4 is an enlarged sectional view of a main part of a through-type bushing showing another embodiment of the present invention.
【図５】本発明の他の実施例を示す計器用変成器の縦断
面図。FIG. 5 is a longitudinal sectional view of an instrument transformer according to another embodiment of the present invention.
【図６】代表的なスイッチギヤの側面図。FIG. 6 is a side view of a typical switchgear.
【図７】[図６]の絶縁スペーサ９の横断面図。FIG. 7 is a cross-sectional view of the insulating spacer 9 of FIG.
１…絶縁スペーサ １０…中心導体 １４…絶縁層 DESCRIPTION OF SYMBOLS 1 ... Insulating spacer 10 ... Center conductor 14 ... Insulating layer
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１３年６月２１日（２００１．６．２
１）[Submission Date] June 21, 2001 (2001.6.2)
1)
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】発明の名称[Correction target item name] Name of invention
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【発明の名称】 開閉装置[Title of the Invention] Switchgear
【手続補正２】[Procedure amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】特許請求の範囲[Correction target item name] Claims
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【特許請求の範囲】[Claims]
【手続補正３】[Procedure amendment 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００１[Correction target item name] 0001
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００１】[0001]
【発明の属する技術分野】本発明は、例えばスイッチギ
ヤに用いられる電気機器の主回路導体の口出し部を備え
た開閉装置に関係する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electric device used for, for example, a switchgear, which is provided with a lead portion of a main circuit conductor.
Switchgear .
【手続補正４】[Procedure amendment 4]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１１[Correction target item name] 0011
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００１１】本発明の目的は、破壊電圧を向上させた主
回路導体口出し部を備えた開閉装置を提供することにあ
る。[0011] It is an object of the present invention is primarily with improved breakdown voltage
An object of the present invention is to provide a switchgear provided with a circuit conductor outlet .
【手続補正５】[Procedure amendment 5]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１３[Correction target item name] 0013
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００１３】また第２の発明では、中心導体を絶縁物で
注形し、少なくとも中心導体近傍の絶縁層沿面と中心導
体の軸とのなす角度が２２．５〜５０度であることを要
旨とする。In the second invention, the center conductor is cast with an insulator , and at least the surface of the insulating layer near the center conductor and the center conductor are formed.
The gist is that the angle formed by the body axis is 22.5 to 50 degrees .
【手続補正６】[Procedure amendment 6]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１４[Correction target item name] 0014
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００１４】さらに第３の発明は、中心導体を絶縁物で
注形し、絶縁層の比誘電率をほぼ５、周囲の絶縁ガスの
比誘電率をほぼ１とし、少なくとも中心導体近傍の絶縁
層沿面と中心導体の軸とのなす角度をほぼ５０度とした
主回路導体口出し部を備えた開閉装置である。According to a third aspect of the present invention, the center conductor is cast with an insulator, the relative permittivity of the insulating layer is set to approximately 5, and the surrounding insulating gas is injected.
Make the relative dielectric constant almost 1, and insulate at least near the center conductor
The angle between the surface of the layer and the axis of the central conductor was approximately 50 degrees
This is a switchgear provided with a main circuit conductor outlet .
【手続補正７】[Procedure amendment 7]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２３[Correction target item name] 0023
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２３】次に、接地側に二次巻線を装着した貫通形
ブッシングを図４に示すが、中心導体１５と二次巻線１
６を一体で注形する絶縁層１７において、中心導体１５
が導出する絶縁層１７ａの角度を５０度以下にすること
により、沿面の電界強度の法線方向の成分と接線方向の
成分の電界強度を抑制する。なお、１８は接触子であ
り、また、１９は他の機器へ接続する接続導体である。
このようなブッシングにおいては、埋込み金属が大きい
ので絶縁層１７はゴム状等のやわらかい材料を用いるこ
とがある。この場合、比誘電率は例えばシリコーンゴム
で２〜３であるが、絶縁層１７と周囲の絶縁媒体の比誘
電率が異なっているので、沿面では等電位線が屈折して
電界強度が乱れる。このような低い方の比誘電率の沿面
では、電界強度の成分の平衡を図ることにより、沿面の
放電進展を防ぐことができる。また、接地側に二次巻線
１６があり、中心導体１５との電界強度分布が一般のモ
ールドブッシングと異なる場合においても、沿面のうち
の電界強度の高い高電圧側の電界強度を抑制して成分を
平衡させれば、絶縁耐力の向上が図れる。FIG. 4 shows a through-type bushing in which a secondary winding is mounted on the ground side.
In the insulating layer 17 for integrally casting the center conductor 6, the central conductor 15
The angle of the insulating layer 17a derived from is not more than 50 degrees, so that the component of the creepage electric field strength in the normal direction and the tangential direction
Suppress the electric field strength of the component . Reference numeral 18 denotes a contact, and 19 denotes a connection conductor for connecting to another device.
In such a bushing, since the buried metal is large, the insulating layer 17 may use a soft material such as rubber. In this case, the relative dielectric constant is, for example, 2 to 3 for silicone rubber. However, since the relative dielectric constants of the insulating layer 17 and the surrounding insulating medium are different, equipotential lines are refracted on the surface, and the electric field intensity is disturbed. In such a creeping surface with a lower relative dielectric constant, the progress of discharge on the creeping surface can be prevented by balancing the components of the electric field intensity. Further, even when the secondary winding 16 is provided on the ground side and the electric field intensity distribution with the center conductor 15 is different from that of a general mold bushing, the electric field intensity on the high voltage side of the creeping surface where the electric field intensity is high is suppressed. If the components are balanced, the dielectric strength can be improved.
【手続補正８】[Procedure amendment 8]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２５[Correction target item name] 0025
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２５】他の実施例として、空気やＮ2ガスなどを
用いた絶縁媒体中においても、絶縁物に対して比誘電率
が小さく、また絶縁耐力が小さいので、主回路導体の口
出し部にあたる絶縁物の角度を５０度以下にすれば、法
線方向と接線方向の電界強度を抑制して破壊電圧の向上
が図れ、効果的に縮小化を図ることができる。As another embodiment, even in an insulating medium using air, N 2 gas, or the like, since the dielectric constant is small relative to the insulator and the dielectric strength is small, the insulating material corresponding to the lead-out portion of the main circuit conductor is used. if the angle of the object below 50 degrees, law
The electric field strength in the line direction and the tangential direction is suppressed, the breakdown voltage can be improved, and the size can be effectively reduced.
【手続補正９】[Procedure amendment 9]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２６[Correction target item name] 0026
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２６】[0026]
【発明の効果】以上のように第１の発明、第２の発明に
よれば、中心導体近傍の絶縁層沿面の電界強度の成分に
ついて、法線方向の成分を接線方向成分以上にしたの
で、電界強度が抑制されて絶縁物沿面の破壊電圧を向上
させた主回路導体口出し部を備えた開閉装置を得ること
ができる。As described above, according to the first and second aspects of the present invention, the component of the electric field strength on the surface of the insulating layer near the center conductor is made larger than the tangential component in the normal direction. It is possible to obtain a switchgear provided with a main circuit conductor lead- out portion in which the electric field strength is suppressed and the breakdown voltage on the surface of the insulator is improved.
【手続補正１０】[Procedure amendment 10]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２７[Correction target item name] 0027
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２７】さらに第３の発明によれば、絶縁層の比誘
電率をほぼ５、周囲の絶縁ガスの比誘電率をほぼ１と
し、少なくとも中心導体近傍の絶縁層沿面と中心導体の
軸とのなす角度をほぼ５０度としたので、法線方向と接
線方向の電界強度が平衡され、電界強度を抑制して破壊
電圧の向上が図れ、効果的に縮小化を図ることができ
る。According to the third aspect of the present invention, the insulating layer has a specific thickness.
The electric conductivity is approximately 5, and the relative dielectric constant of the surrounding insulating gas is approximately 1.
At least the surface of the insulating layer near the center conductor and the center conductor
Since the angle with the axis was set to approximately 50 degrees,
The electric field strength in the line direction is balanced, suppressing the electric field strength and destroying
The voltage can be improved, and the size can be effectively reduced .
───────────────────────────────────────────────────── フロントページの続き (72)発明者 正木 信男 東京都府中市東芝町１番地 株式会社東芝 府中工場内 Ｆターム(参考） 5G016 DA06 5G017 AA23 BB10 FF06 5G333 AA07 AA09 AA11 AB05 BA01 CA01 DA03 EA02 EB09 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Nobuo Masaki, Inventor No. 1, Toshiba-cho, Fuchu-shi, Tokyo F-term in the Fuchu Plant, Toshiba Corporation 5G016 DA06 5G017 AA23 BB10 FF06 5G333 AA07 AA09 AA11 AB05 BA01 CA01 DA03 EA02 EB09
Claims (3)
前記中心導体近傍の絶縁層沿面の法線方向の電界強度を
接線方向の電界強度以上にしたことを特徴とする電気機
器の主回路導体口出し部。1. A main circuit of an electric device, wherein a center conductor is cast with an insulator, and at least an electric field strength in a normal direction on a surface of an insulating layer near the center conductor is equal to or larger than an electric field strength in a tangential direction. Conductor outlet.
沿面と前記中心導体の軸とのなす角度が５０度以下であ
ることを特徴とする電気機器の主回路導体口出し部。2. A main circuit conductor lead portion of an electric device, wherein a central conductor is cast with an insulator, and an angle between the surface of the insulating layer and an axis of the central conductor is 50 degrees or less.
体と絶縁物が接する領域での両者のなす角度が５０度以
下であることを特徴とするモールドブッシング。3. A mold bushing in which a center conductor is cast with an insulator, and an angle formed between the center conductor and the insulator in a region where the center conductor and the insulator contact each other is 50 degrees or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001157200A JP3657890B2 (en) | 2001-05-25 | 2001-05-25 | Gas insulated switchgear |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001157200A JP3657890B2 (en) | 2001-05-25 | 2001-05-25 | Gas insulated switchgear |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01209193A Division JP3283941B2 (en) | 1993-01-28 | 1993-01-28 | Mold bushing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002025372A true JP2002025372A (en) | 2002-01-25 |
| JP3657890B2 JP3657890B2 (en) | 2005-06-08 |
Family
ID=19001095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001157200A Expired - Fee Related JP3657890B2 (en) | 2001-05-25 | 2001-05-25 | Gas insulated switchgear |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3657890B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3477310A4 (en) * | 2016-06-23 | 2019-06-19 | Mitsubishi Electric Corporation | Voltage detection device and gas insulation switchgear apparatus having voltage detection device mounted thereon |
-
2001
- 2001-05-25 JP JP2001157200A patent/JP3657890B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3477310A4 (en) * | 2016-06-23 | 2019-06-19 | Mitsubishi Electric Corporation | Voltage detection device and gas insulation switchgear apparatus having voltage detection device mounted thereon |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3657890B2 (en) | 2005-06-08 |
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