JP3373048B2 - Insulated conductor - Google Patents
Insulated conductorInfo
- Publication number
- JP3373048B2 JP3373048B2 JP11575794A JP11575794A JP3373048B2 JP 3373048 B2 JP3373048 B2 JP 3373048B2 JP 11575794 A JP11575794 A JP 11575794A JP 11575794 A JP11575794 A JP 11575794A JP 3373048 B2 JP3373048 B2 JP 3373048B2
- Authority
- JP
- Japan
- Prior art keywords
- electric field
- conductor
- flange
- field relaxation
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、ガス絶縁スイッチギヤ
の絶縁ガス室の外壁などに貫設される絶縁導体に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an insulated conductor penetrating the outer wall of an insulating gas chamber of a gas insulated switchgear.
【０００２】[0002]
【従来の技術】例えば、六フッ化硫黄ガスなどの絶縁ガ
スを箱体内に封入したスイッチギヤ等においては、絶縁
ガス室の外壁に設けられた主回路導体の導出部におい
て、外壁を貫通する絶縁導体が採用されている。2. Description of the Related Art For example, in a switchgear in which an insulating gas such as sulfur hexafluoride gas is enclosed in a box body, an insulation that penetrates the outer wall of a main circuit conductor provided on the outer wall of an insulating gas chamber is insulated. Conductors are used.
【０００３】この絶縁導体は、図５の半断面図に示すよ
うに、中心導体21の周囲に、例えばエポキシ樹脂よりな
る絶縁層22を注形で同軸に形成し、中央部の左側に突設
された環状の取付部22ａを箱体の外壁に設けられたフラ
ンジ３の外面に当接させボルト４で固定している。As shown in the half cross-sectional view of FIG. 5, this insulated conductor is formed by coaxially casting an insulating layer 22 made of, for example, an epoxy resin around a center conductor 21 and protrudingly provided on the left side of the central portion. The annular mounting portion 22a thus formed is brought into contact with the outer surface of the flange 3 provided on the outer wall of the box body and is fixed by the bolt 4.
【０００４】この絶縁導体の取付部22ａの左側は、絶縁
ガス室20の内部に突設されるために、絶縁層22の沿面距
離は短く、逆に、取付部22ａの右側の絶縁層22の沿面距
離は、気中に突設されるために複数のひだを形成して長
くなっている。Since the left side of the mounting portion 22a of the insulated conductor is projectingly provided inside the insulating gas chamber 20, the creeping distance of the insulating layer 22 is short, and conversely, the insulating layer 22 on the right side of the mounting portion 22a. The creepage distance is long due to the formation of a plurality of pleats because it is projected in the air.
【０００５】さらに、接地部となる取付部22ａの近傍の
絶縁層22の電界を緩和するために、絶縁層22の内部に
は、両端に曲面が形成された円筒形の埋込電極５があら
かじめ一体に注形され、この埋込電極５は、接地されて
いる。一方、フランジ３の外面側には、Ｏリング６が取
り付けられ、フランジ３に取り付けられた取付部２ａの
左側面で押圧されて絶縁ガス室20と外部との気密が維持
されている。Further, in order to alleviate the electric field of the insulating layer 22 in the vicinity of the mounting portion 22a serving as the grounding portion, a cylindrical embedded electrode 5 having curved surfaces formed at both ends is previously provided inside the insulating layer 22. It is cast integrally, and the embedded electrode 5 is grounded. On the other hand, an O-ring 6 is attached to the outer surface side of the flange 3, and is pressed by the left side surface of the attachment portion 2a attached to the flange 3 to maintain the airtightness between the insulating gas chamber 20 and the outside.
【０００６】このように構成された絶縁導体において
は、例えば、特公昭６０−１６６８９号公報にも開示さ
れているように、フランジ３を境にして左右に形成され
た絶縁層22の直後と、接地側に対する電界緩和構造とし
ての埋込電極の形状はほぼ同様となっている。In the insulated conductor thus constructed, for example, as disclosed in Japanese Patent Publication No. 60-16689, immediately after the insulating layer 22 formed on the left and right with the flange 3 as a boundary, The shape of the buried electrode as an electric field relaxation structure with respect to the ground side is almost the same.
【０００７】このように構成された従来の絶縁導体にお
いては、取付部の両側をほぼ対称の構造とすることによ
り、接地側の電界分布も左右でほぼ同様として、安定し
た特性の絶縁導体としている。In the conventional insulated conductor thus constructed, the both sides of the mounting portion are made substantially symmetrical so that the electric field distribution on the ground side is substantially the same on the left and right sides, and the insulated conductor has stable characteristics. .
【０００８】[0008]
【発明が解決しようとする課題】ところが、このように
構成された絶縁導体においては、絶縁層22の取付部22ａ
の両側の直径がほぼ同一値となっているために、絶縁導
体の絶縁耐力の低い気中側で絶縁層22の外径が決まるの
で、絶縁耐力の高い絶縁ガス室側の絶縁層では、冗長度
が過分な製品となるおそれがある。However, in the insulated conductor having such a structure, the mounting portion 22a of the insulating layer 22 is formed.
Since the diameters on both sides of the insulation conductor are almost the same, the outer diameter of the insulation layer 22 is determined on the air side where the insulation strength of the insulated conductor is low. There is a risk that the product will be overkill.
【０００９】この絶縁耐力には、絶縁層の厚さの方向と
沿面の方向の二通りがあるが、沿面の電界強度は、埋込
電極５と絶縁層の外面までの絶縁の厚さによって、大き
く変化するので、一般的には数mmの絶縁厚さとし、気中
側で約３kV／mm以下の値となるように設計されている。There are two ways of this dielectric strength, the direction of the thickness of the insulating layer and the direction of the creeping surface. The electric field strength on the creeping surface depends on the thickness of the insulation up to the embedded electrode 5 and the outer surface of the insulating layer. Since it varies greatly, the insulation thickness is generally set to a few mm, and it is designed to have a value of about 3 kV / mm or less on the air side.
【００１０】このため、絶縁ガス室側の沿面距離は短い
ものの、埋込電極５と沿面までの絶縁層の厚さがほぼ同
一となっているので、気中側と比べて電界強度が若干上
がるが、ほぼ同一値となる。すると、絶縁ガス室側の絶
縁ガス（例えば、六フッ化硫黄ガス）の絶縁耐力は気中
の約３倍となるので、裕度が過分となる。Therefore, although the creeping distance on the insulating gas chamber side is short, the thickness of the insulating layer up to the buried electrode 5 and the creeping surface is almost the same, so that the electric field strength is slightly higher than that on the air side. However, the values are almost the same. Then, the dielectric strength of the insulating gas (for example, sulfur hexafluoride gas) on the insulating gas chamber side becomes about three times that in the air, so that the margin becomes excessive.
【００１１】また、他の電気機器へ接続するときには、
充電部が露出した中心導体の端部で行われるので、接続
部の外形が大きくなり、電界強度を緩和する、例えばシ
ールドリングなどの構造を採用しなければならなくな
る。When connecting to other electric equipment,
Since the charging part is performed at the exposed end of the central conductor, the outer shape of the connecting part becomes large, and it is necessary to employ a structure such as a shield ring for relaxing the electric field strength.
【００１２】このように、従来の絶縁導体においては、
中央に突設された取付部の両側に形成された絶縁層の厚
さが等しく、電界緩和構造もほぼ等しい条件となってい
るので、部分的には裕度が過分の製品となり、外形が大
形となる。As described above, in the conventional insulated conductor,
Since the insulating layers formed on both sides of the mounting part projecting in the center have the same thickness and the electric field relaxing structure is almost the same, the product has a partially excessive margin and a large outer shape. Be in shape.
【００１３】そこで、本発明の目的は、設置部の絶縁媒
体の絶縁特性に応じて、取付部の両側の耐電圧裕度を平
準化し、外形の小形化を図ることのできる絶縁導体を得
ることである。Therefore, it is an object of the present invention to obtain an insulated conductor capable of reducing the outer shape by leveling the withstand voltage tolerances on both sides of the mounting portion according to the insulating characteristics of the insulating medium of the installation portion. Is.
【００１４】[0014]
【課題を解決するための手段】請求項１に記載の発明
は、中心導体と、この中心導体の外周にこの中心導体と
同軸に形成され中間部に突設されたフランジ部の片側が
フランジ部の他側よりも絶縁耐力の高い媒体内に突設さ
れる絶縁層を備え、フランジの片側に形成された第１の
電界緩和溝と、フランジの他側に形成され絶縁層の厚み
が第１の電界緩和溝の絶縁層の厚みよりも大なる第２の
電界緩和溝を備えた絶縁導体である。According to a first aspect of the present invention, one side of a central conductor and a flange portion formed coaxially with the central conductor on the outer periphery of the central conductor and projecting from an intermediate portion has a flange portion. A first electric field relaxation groove formed on one side of the flange, and an insulating layer formed on the other side of the flange having a thickness of Is an insulated conductor having a second electric field relaxation groove having a thickness larger than the thickness of the insulating layer of the electric field relaxation groove.
【００１５】また、請求項２に記載の発明は、中心導体
と、この中心導体の外周にこの中心導体と同軸に形成さ
れ中間部に突設されたフランジ部の片側がフランジ部の
他側よりも絶縁耐力の高い媒体内に突設される絶縁層を
備え、フランジの片側に形成された第１の電界緩和溝
と、フランジの他側に形成され絶縁層の厚みが第１の電
界緩和溝の絶縁層の厚みよりも大なる第２の電界緩和溝
と、中心導体の他側に突設され絶縁層に埋設される断面
Ｕ字状の電界緩和部を備えた絶縁導体である。According to the second aspect of the present invention, one side of the central conductor and a flange portion formed coaxially with the central conductor on the outer periphery of the central conductor and projecting in the intermediate portion is provided from the other side of the flange portion. Also has an insulating layer projecting in a medium having a high dielectric strength, and a first electric field relaxation groove formed on one side of the flange and an electric field relaxation groove formed on the other side of the flange with a thickness of the first electric field relaxation groove. The second electric field relaxation groove having a thickness larger than the thickness of the insulation layer, and the electric field relaxation portion having a U-shaped cross section and projecting from the other side of the central conductor and embedded in the insulation layer.
【００１６】さらに、請求項３に記載の発明は、請求項
２に記載の絶縁導体において、電界緩和部の底部からフ
ランジの他側の電界緩和溝までの長さと、この電界緩和
溝の直径との比を85％以上としたことを特徴とする。Further, in the invention described in claim 3, in the insulated conductor described in claim 2, the length from the bottom of the electric field relaxation portion to the electric field relaxation groove on the other side of the flange, and the diameter of the electric field relaxation groove. The ratio is set to 85% or more.
【００１７】[0017]
【作用】請求項１に記載の発明においては、絶縁耐力の
低い媒体側の第２の電界緩和溝の底部と中心導体との間
に印加される電圧による電界強度は、絶縁耐力の低い媒
体側の第２の電界緩和溝の底部から中心導体との間に形
成された厚みの大なる絶縁層によって緩和される。In the invention described in claim 1, the electric field strength due to the voltage applied between the bottom portion of the second electric field relaxation groove on the medium side having low dielectric strength and the center conductor is the medium side having low dielectric strength. Is relaxed by the thick insulating layer formed between the bottom of the second electric field relaxation groove and the central conductor.
【００１８】また、請求項２に記載の発明においては、
絶縁耐力の低い媒体側の第２の電界緩和溝の底部と中心
導体との間に印加される電圧による電界強度は、絶縁耐
力の低い媒体側の第２の電界緩和溝の底部から中心導体
との間に形成された厚みの大なる絶縁層によって緩和さ
れ、絶縁耐力の低い媒内側の中心導体の端部と絶縁層の
外面との間の電界強度は、中心導体の端部に突設された
Ｕ字状の電界緩和部によって緩和される。According to the second aspect of the invention,
The electric field strength due to the voltage applied between the bottom of the second electric field relaxation groove on the medium side having low dielectric strength and the center conductor is such that the electric field strength from the bottom of the second electric field relaxation groove on the medium side having low dielectric strength to the center conductor The electric field strength between the end of the central conductor inside the medium with low dielectric strength and the outer surface of the insulating layer is mitigated by the thick insulating layer formed between It is relieved by the U-shaped electric field relieving portion.
【００１９】さらに、請求項３に記載の発明において
は、請求項２に記載の絶縁導体において、絶縁耐力の低
い媒内側の中心導体の端部と絶縁層の外面との間の電界
強度は、中心導体の端部に突設されたＵ字状の電界緩和
部によって緩和され、このＵ字状の電界緩和部の表面の
電界強度と、電界緩和溝の底部と対向する中心導体の表
面の電界強度は等しくなる。Further, in the invention according to claim 3, in the insulated conductor according to claim 2, the electric field strength between the end portion of the center conductor inside the medium having a low dielectric strength and the outer surface of the insulating layer is: The electric field strength of the surface of the U-shaped electric field relaxation portion, which is relaxed by the U-shaped electric field relaxation portion projecting at the end of the central conductor, and the electric field of the surface of the central conductor facing the bottom of the electric field relaxation groove. The strength is equal.
【００２０】[0020]
【実施例】以下、本発明の絶縁導体の一実施例を図面を
参照して説明する。図１（ａ）は、本発明の絶縁導体を
示す半断面図で、従来の技術で示した図５に対応する
図、図１（ｂ）は、図１（ａ）の部分拡大図である。図
１（ａ）及び図１（ｂ）において、中心導体１の周囲に
は、エポキシ樹脂よりなる絶縁層２が注形によって形成
されており、中央部の左側に突設された環状の取付部２
ａの左側面をフランジ３にボルト４で固定している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the insulated conductor of the present invention will be described below with reference to the drawings. FIG. 1 (a) is a half cross-sectional view showing an insulated conductor of the present invention, which corresponds to FIG. 5 shown in the prior art, and FIG. 1 (b) is a partially enlarged view of FIG. 1 (a). . 1 (a) and 1 (b), an insulating layer 2 made of epoxy resin is formed around the center conductor 1 by casting, and an annular mounting portion is provided on the left side of the central portion. Two
The left side surface of a is fixed to the flange 3 with bolts 4.
【００２１】但し、取付部２ａの左側は、絶縁ガス室に
突設されるために、沿面距離は短く、逆に、取付部２ａ
の右側は、気中側となるので、ひだを形成して沿面距離
を増やしている。また、フランジ３の外面側には、Ｏリ
ング６を挿入して、このＯリング６を取付部２ａの左側
面で押圧することで、左側のガス室７と右側の大気側と
の気密が維持されている。However, since the left side of the mounting portion 2a is provided so as to project into the insulating gas chamber, the creeping distance is short, and conversely, the mounting portion 2a is
The right side of is the air side, so a fold is formed to increase the creepage distance. Further, by inserting the O-ring 6 on the outer surface side of the flange 3 and pressing the O-ring 6 with the left side surface of the mounting portion 2a, the air tightness between the left gas chamber 7 and the right atmosphere side is maintained. Has been done.
【００２２】絶縁層２の外周には、取付部２ａの基端の
両側に、断面Ｌ字形の溝９Ａ，９Ｂが、フランジ３とボ
ルト４との間の電界を緩和するために形成されている。
これらの溝９Ａ，９Ｂには、破線で示すように、導電塗
料等を塗布した接地層10が形成されて、フランジ３と同
電位となっている。Grooves 9A and 9B having an L-shaped cross section are formed on the outer periphery of the insulating layer 2 on both sides of the base end of the mounting portion 2a in order to reduce the electric field between the flange 3 and the bolt 4. .
As shown by the broken line, a ground layer 10 coated with a conductive paint or the like is formed in these grooves 9A and 9B, and has the same potential as the flange 3.
【００２３】このうち、絶縁ガス室側の電界緩和用の溝
９Ａの底部の直径Ｄ２と、気中側の電界緩和用の溝９Ｂ
の底部の直径Ｄ１との関係は、Ｄ２＜Ｄ１であり、絶縁
耐力の低い気中側の電界緩和用の溝９Ｂの中心導体１の
中心からの距離は、絶縁ガス室側の溝９Ａの中心導体１
の中心からの距離のほぼ２倍となっている。Of these, the diameter D2 of the bottom of the electric field relaxing groove 9A on the insulating gas chamber side and the electric field relaxing groove 9B on the air side.
The relationship with the diameter D1 of the bottom of the is D2 <D1, and the distance from the center of the center conductor 1 of the groove 9B for electric field relaxation on the air side with low dielectric strength is the center of the groove 9A on the insulating gas chamber side. Conductor 1
It is almost twice the distance from the center of.
【００２４】また、中心導体１の右端の接続部には、外
側に一対のコイルばねが巻装された複数列の接触子11を
外側から覆うように円筒状の電極部１ａが形成され、中
心導体１の右端の接触部１ｂは、接触子11の右側に挿入
された接続導体８によって、外部の電気機器に接続され
る。A cylindrical electrode portion 1a is formed at the right end connection portion of the central conductor 1 so as to cover a plurality of rows of contactors 11 on which a pair of coil springs are wound on the outside from the outside. The contact portion 1b at the right end of the conductor 1 is connected to an external electric device by the connection conductor 8 inserted on the right side of the contactor 11.
【００２５】このように構成された絶縁導体において
は、溝9Bの底部の直径Ｄ２に対して、気中側の絶縁層の
溝9Aの底部の直径Ｄ１を大とし、絶縁層２の厚さを厚く
することで、等電位線の間隔が異なってくる。In the insulated conductor thus constructed, the diameter of the insulating layer on the air side is larger than the diameter D2 of the bottom of the groove 9B .
By increasing the diameter D1 of the bottom of the groove 9A and increasing the thickness of the insulating layer 2, the intervals of equipotential lines are different.
【００２６】即ち、気中側は、絶縁ガス室側よりも約２
倍の絶縁厚さがあるので、等電位線の間隔も約２倍とな
る。このため、各絶縁層２の沿面の電界強度は、絶縁ガ
ス室側の絶縁層の電界強度に比べて気中側の方が約２分
の１となる。In other words, the air side is about 2 more than the insulating gas chamber side.
Since there is a double insulation thickness, the distance between equipotential lines is also doubled. Therefore, the electric field strength on the creeping surface of each insulating layer 2 is about one half on the air side as compared with the electric field strength of the insulating layer on the insulating gas chamber side.
【００２７】絶縁媒体の絶縁耐力は、絶縁ガス室側に封
入された六フッ化硫黄ガスに対して気中側が約１／３と
低いので、気中側の電界強度を抑制することができ、絶
縁耐力を上げることができる。なお、絶縁層２の内部の
絶縁耐力は、周囲の絶縁媒体より１桁近く高いため、絶
縁ガス室側の絶縁層の厚みを減らしても良好な特性を維
持することができる。Since the dielectric strength of the insulating medium is as low as about 1/3 on the air side with respect to the sulfur hexafluoride gas sealed in the insulating gas chamber side, it is possible to suppress the electric field strength on the air side. Dielectric strength can be increased. Since the dielectric strength of the inside of the insulating layer 2 is higher than that of the surrounding insulating medium by an order of magnitude, good characteristics can be maintained even if the thickness of the insulating layer on the insulating gas chamber side is reduced.
【００２８】次に、中心導体１の軸心から溝9Aの底部の
直径Ｄ１と接続導体８の接続部までの距離Ｌは、Ｌ／Ｄ
１が86％以上となるように設定している。このＬ／Ｄ１
の関係について、発明者らが検証した特性結果を図２の
グラフに示す。Next, from the axis of the central conductor 1 to the bottom of the groove 9A.
The distance L between the diameter D1 and the connecting portion of the connecting conductor 8 is L / D
1 is set to 86% or more. This L / D1
The graph of FIG. 2 shows the result of the characteristics verified by the inventors regarding the above relationship.
【００２９】中心導体接続部の電極部１ａの電界強度を
Ｅ1 、中心導体１が溝9Bの接地層10と対向する位置の電
界強度をＥ2 、接地層10の溝９Ｂ部の電界強度をＥ3 と
して、Ｌ／Ｄ１を変えたときの電界強度分布の特性であ
る。[0029] The electric field strength of the electrode portions 1a of the central conductor connection portion E1, the electric field intensity of the position where the center conductor 1 is opposed to the ground layer 10 of the groove 9B E2, as E3 electric field strength of the groove 9B of the ground layer 10 , L / D1 when the electric field strength distribution is changed.
【００３０】この特性より、Ｌ／Ｄ１が小さく溝９Ｂと
電極部１ａが近い場合には、電界強度Ｅ1 が非常に高く
なる。しかし、Ｌ／Ｄ１が大きくなり、Ｌ／Ｄ１＝86
（％）の点になると、Ｅ1 ＝Ｅ2 となり、中心導体１と
電極部の電界強度が等しくなる。From this characteristic, when L / D1 is small and the groove 9B and the electrode portion 1a are close to each other, the electric field strength E 1 becomes very high. However, L / D1 becomes large and L / D1 = 86
At the point of (%), E 1 = E 2 , and the electric field strengths of the central conductor 1 and the electrode portion become equal.
【００３１】ここで、沿面に与える電界強度を考えれ
ば、気中側に開口部を形成する電極部１ａ側の電界強度
を抑制しなければならない。したがって、Ｌ／Ｄ１は86
（％）以上に設定することで、沿面の電界強度を抑制す
ることができるので、耐電圧が向上し、絶縁導体の外形
を小形化することができる。なお、電界強度Ｅ3 は、気
中側に接しているため、充分に低い値に抑えられるよう
に、溝９Ｂの曲率半径を大きくしている。Considering the electric field strength applied to the creeping surface, it is necessary to suppress the electric field strength on the side of the electrode portion 1a forming the opening on the air side. Therefore, L / D1 is 86
By setting it to (%) or more, the electric field strength on the creeping surface can be suppressed, so that the withstand voltage can be improved and the outer shape of the insulated conductor can be miniaturized. Since the electric field strength E 3 is in contact with the air side, the radius of curvature of the groove 9B is increased so as to be suppressed to a sufficiently low value.
【００３２】また、接地層10の近傍の沿面と電極部１ａ
の近傍の沿面の電界強度は、絶縁層２の絶縁厚さｔによ
って大きく変化する。この特性を発明者らが検証した結
果を図３に示すが、絶縁厚さｔが増えると、電界強度は
低下する。The creeping surface near the ground layer 10 and the electrode portion 1a
The electric field strength on the creeping surface in the vicinity of changes greatly depending on the insulating thickness t of the insulating layer 2. The results of verification by the inventors of this characteristic are shown in FIG. 3. The electric field strength decreases as the insulation thickness t increases.
【００３３】例えば、絶縁導体の定格電圧が52kV（注；
ＩＥＣ規格）のときには、インパルス耐電圧は250 kVが
荷電されるので、この電圧に対して、気中の破壊電界強
度３kV／mmを下廻る絶縁層の厚さｔを求めると、ｔ＝40
mm以上である。For example, the rated voltage of the insulated conductor is 52 kV (Note;
In the case of the IEC standard), the impulse withstand voltage is charged at 250 kV, so if the thickness t of the insulating layer below the breakdown electric field strength in air of 3 kV / mm is calculated for this voltage, t = 40.
mm or more.
【００３４】このため、接地側と高電圧側の電界緩和電
極に対して、沿面の電界強度が許容値を下廻る絶縁厚さ
ｔは、250 kV／40mm＝6.2 kV／mm以下となるように設定
する必要がある。For this reason, the insulation thickness t at which the electric field strength on the creeping surface is below the permissible value for the electric field relaxation electrodes on the ground side and the high voltage side is 250 kV / 40 mm = 6.2 kV / mm or less. Must be set.
【００３５】このように設定された絶縁厚さを有する絶
縁導体では、耐電圧印加時に、気中で部分破壊が発生せ
ず、良好な絶縁耐力を有するので、全体の外形を小形化
することができる。In the insulated conductor having the insulation thickness set in this way, partial breakdown does not occur in the air when a withstand voltage is applied, and it has good dielectric strength, so that the overall outer shape can be miniaturized. it can.
【００３６】このような絶縁導体から他の電気機器へ接
続するときには、図４に示すように、接続導体８を中心
導体１の凸部１ｂに接触子11を接続させる。この場合、
接続導体８の電界強度を抑制するために、周囲に絶縁層
13を設けている。この絶縁層13は、絶縁導体の絶縁層２
が接続部から一定の絶縁厚さｔを備えて広径になる位置
Ａ点から電気機器14までの間に設けられている。When connecting from such an insulated conductor to another electric device, as shown in FIG. 4, the contact 11 is connected to the convex portion 1b of the center conductor 1 of the connection conductor 8. in this case,
In order to suppress the electric field strength of the connecting conductor 8, an insulating layer is provided around
13 are provided. This insulating layer 13 is the insulating layer 2 of the insulated conductor.
Is provided between the electric equipment 14 and a position A where the diameter is wide from the connection portion with a constant insulation thickness t.
【００３７】即ち、接続部近傍では、電極部１ａの電界
緩和によって、充分に電界強度が抑制されているが、広
径となる部分での電界緩和と絶縁補強により、接続導体
８の絶縁耐力を上げることができる。That is, near the connection portion, the electric field strength is sufficiently suppressed by the electric field relaxation of the electrode portion 1a, but the dielectric strength of the connection conductor 8 is reduced by the electric field relaxation and the insulation reinforcement in the wide diameter portion. Can be raised.
【００３８】この絶縁層13は、数mmの絶縁厚さがあれば
充分に接続導体８の電界強度を抑制することができ、ま
た、誘電率が小さい方がその効果が大きい。例えば、絶
縁層８と同一のエポキシ樹脂でもよいが、誘電率の小さ
いポリエチレン樹脂では、更に効果がある。If the insulating layer 13 has an insulating thickness of several mm, the electric field strength of the connecting conductor 8 can be sufficiently suppressed, and the smaller the permittivity, the greater the effect. For example, the same epoxy resin as the insulating layer 8 may be used, but a polyethylene resin having a low dielectric constant is more effective.
【００３９】なお、上記実施例では、フランジに対して
気中側に接続部を設けた例で説明したが、絶縁ガス室側
に同様の構成を用いても同様の効果が得られる。なお、
フランジに対し、両側に接続部を設けてもよい。但し、
沿面においては、絶縁ガスの許容電界強度が気中の約３
倍であるので、許容値を上げることができ、それに伴っ
て絶縁厚さを減らすことができる。Although the above embodiment has been described with reference to the example in which the connecting portion is provided on the air side of the flange, the same effect can be obtained even if the same configuration is used on the insulating gas chamber side. In addition,
You may provide a connection part on both sides with respect to a flange. However,
On the surface, the allowable electric field strength of the insulating gas is about 3 in the air.
Double, the tolerance can be increased and the insulation thickness can be reduced accordingly.
【００４０】さらに、絶縁ガスが封入された密封室相互
間においても、絶縁ガスの種別や圧力によって、耐電圧
特性が異なるときには、適用することができ、真空中と
大気中の間に設けられた隔壁を貫通する絶縁導体にも適
用することができる。Further, even between the sealed chambers in which the insulating gas is sealed, the invention can be applied when the withstand voltage characteristics differ depending on the type and pressure of the insulating gas, and a partition wall provided between the vacuum and the atmosphere can be used. It can also be applied to a penetrating insulated conductor.
【００４１】[0041]
【発明の効果】以上、請求項１に記載の発明によれば、
中心導体と、この中心導体の外周にこの中心導体と同軸
に形成され中間部に突設されたフランジ部の片側がフラ
ンジ部の他側よりも絶縁耐力の高い媒体内に突設される
絶縁層を備え、フランジの片側に形成された第１の電界
緩和溝と、フランジの他側に形成され絶縁層の厚みが第
１の電界緩和層の絶縁層の厚みよりも大なる第２の電界
緩和層を備えることで、絶縁耐力の低い媒体側の第２の
電界緩和溝の底部と中心導体との間に印加される電圧に
よる電界強度は、絶縁耐力の低い媒体側の第２の電界緩
和溝の底部から中心導体との間に形成された厚みの大な
る絶縁層によって緩和したので、絶縁媒体の絶縁特性に
対応し、取付部の両側の耐電圧裕度を平準化し、外形の
小形化を図ることのできる絶縁導体を得ることができ
る。As described above, according to the invention of claim 1,
A center conductor and an insulating layer formed on the outer periphery of the center conductor so that one side of the flange portion formed coaxially with the center conductor and protruding in the middle portion has a higher dielectric strength than the other side of the flange portion. And a second electric field relaxation groove formed on one side of the flange, and an insulating layer formed on the other side of the flange in which the thickness of the insulating layer is greater than the thickness of the insulating layer of the first electric field relaxation layer. By providing the layer, the electric field strength due to the voltage applied between the bottom of the second electric field relaxation groove on the medium side having low dielectric strength and the center conductor is the second electric field relaxation groove on the medium side having low dielectric strength. Since it is relaxed by the thick insulating layer formed between the bottom part of the and the central conductor, it corresponds to the insulation characteristics of the insulating medium, and the withstand voltage tolerances on both sides of the mounting part are leveled to reduce the external size. An insulated conductor that can be achieved can be obtained.
【００４２】また、請求項２に記載の発明によれば、中
心導体と、この中心導体の外周にこの中心導体と同軸に
形成され中間部に突設されたフランジ部の片側がフラン
ジ部の他側よりも絶縁耐力の高い媒体内に突設される絶
縁層を備え、フランジの片側に形成された第１の電界緩
和層と、フランジの他側に形成され絶縁層の厚みが第１
の電界緩和層の厚みよりも大なる第２の電界緩和層を備
えることで、絶縁耐力の低い第２の媒体側の電界緩和溝
の底部と中心導体との間に印加される電圧による電界強
度は、絶縁耐力の低い媒体側の第２の電界緩和溝の底部
から中心導体との間に形成された厚みの大なる絶縁層に
よって緩和し、絶縁耐力の低い媒内側の中心導体の端部
と絶縁層の外面との間の電界強度は、中心導体の端部に
突設されたＵ字状の電界緩和部によって緩和したので、
絶縁媒体の絶縁特性に対応し、取付部の両側の耐電圧裕
度を平準化し、外形の小形化を図ることのできる絶縁導
体を得ることができる。According to the second aspect of the present invention, the center conductor and one side of the flange portion formed coaxially with the center conductor on the outer periphery of the center conductor and protruding from the intermediate portion are the other side of the flange portion. A first electric field relaxation layer formed on one side of the flange and an insulation layer formed on the other side of the flange having a thickness of the first electric field relaxation layer.
By providing the second electric field relaxation layer having a thickness larger than that of the electric field relaxation layer, the electric field strength due to the voltage applied between the bottom portion of the electric field relaxation groove on the second medium side having a low dielectric strength and the central conductor. Is relaxed by an insulating layer having a large thickness formed between the bottom of the second electric field relaxation groove on the medium side having a low dielectric strength and the center conductor, and the end portion of the center conductor inside the medium having a low dielectric strength is formed. Since the electric field strength between the outer surface of the insulating layer and the outer surface of the insulating layer is relaxed by the U-shaped electric field relaxing portion projecting at the end of the central conductor,
It is possible to obtain an insulated conductor capable of reducing the outer size of the mounting portion by leveling the withstand voltage tolerances corresponding to the insulating characteristics of the insulating medium.
【００４３】さらに、請求項３に記載の発明によれば、
請求項２に記載の絶縁導体において、電界緩和部の底部
からフランジの他側の電界緩和溝までの長さと、この電
界緩和溝の直径との比を85％以上とすることで、絶縁耐
力の低い媒体側の電界緩和溝の底部と中心導体との間に
印加される電圧による電界強度は、絶縁耐力の低い媒体
側の電界緩和溝の底部から中心導体との間に形成された
厚みの大なる絶縁層によって緩和し、絶縁耐力の低い媒
内側の中心導体の端部と絶縁層の外面との間の電界強度
は、中心導体の端部に突設されたＵ字状の電界緩和部に
よって緩和し、このＵ字状の電界緩和部の表面の電界強
度と、電界緩和溝の底部と対向する中心導体の表面の電
界強度を等しくしたので、絶縁媒体の絶縁特性に対応
し、取付部の両側の耐電圧裕度を平準化し、外形の小形
化を図ることのできる絶縁導体を得ることができる。Further, according to the invention of claim 3,
In the insulated conductor according to claim 2, the ratio of the length from the bottom of the electric field relaxation portion to the electric field relaxation groove on the other side of the flange to the diameter of the electric field relaxation groove is set to 85% or more, thereby increasing the dielectric strength. The electric field strength due to the voltage applied between the bottom portion of the electric field relaxation groove on the medium side and the center conductor is larger than the thickness formed between the bottom portion of the electric field relaxation groove on the medium side with low dielectric strength and the center conductor. The electric field strength between the end of the central conductor inside the medium having a low dielectric strength and the outer surface of the insulating layer is relaxed by the U-shaped electric field relaxing portion protruding from the end of the central conductor. Since the electric field strength of the surface of the U-shaped electric field relaxing portion is made equal to the electric field strength of the surface of the central conductor facing the bottom of the electric field relaxing groove, the electric field strength of the mounting portion corresponds to the insulating characteristic of the insulating medium. The withstand voltage tolerances on both sides can be leveled to reduce the external size. It can be obtained insulated conductors.
【図１】（ａ）は、本発明の絶縁導体の一実施例を示す
半断面図、（ｂ）は（ａ）の要部を示す拡大図。1A is a half sectional view showing an embodiment of an insulated conductor of the present invention, and FIG. 1B is an enlarged view showing a main part of FIG. 1A.
【図２】本発明の絶縁導体の作用を示すグラフ。FIG. 2 is a graph showing the action of the insulated conductor of the present invention.
【図３】本発明の絶縁導体の図２と異なる作用を示すグ
ラフ。FIG. 3 is a graph showing an action of the insulated conductor of the present invention different from that of FIG.
【図４】本発明の絶縁導体の他の実施例を示す半断面
図。FIG. 4 is a half cross-sectional view showing another embodiment of the insulated conductor of the present invention.
【図５】従来の絶縁導体の一例を示す半断面図。FIG. 5 is a half sectional view showing an example of a conventional insulated conductor.
１…中心導体、１ａ…電極部、２…絶縁層、２ａ…取付
部、３…フランジ、４…ボルト、５…埋込電極、６…Ｏ
リング、７…絶縁ガス室、８…接続導体、９Ａ，９Ｂ…
溝、10…接地層、11…接触子。DESCRIPTION OF SYMBOLS 1 ... Central conductor, 1a ... Electrode part, 2 ... Insulating layer, 2a ... Attachment part, 3 ... Flange, 4 ... Bolt, 5 ... Embedded electrode, 6 ... O
Ring, 7 ... Insulating gas chamber, 8 ... Connection conductor, 9A, 9B ...
Groove, 10 ... Ground layer, 11 ... Contactor.
フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01B 17/00 - 17/54 H01H 33/53 Continuation of front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01B 17/00-17/54 H01H 33/53
Claims (3)
中心導体と同軸に形成され中間部に突設されたフランジ
部の片側が前記フランジ部の他側よりも絶縁耐力の高い
媒体内に突設される絶縁層を備え、前記フランジの片側
に形成された第１の電界緩和溝と、前記フランジの他側
に形成され絶縁層の厚みが前記第１の電界緩和溝の絶縁
層の厚みよりも大なる第２の電界緩和溝を備えた絶縁導
体。1. A center conductor and one side of a flange portion formed coaxially with the center conductor on the outer periphery of the center conductor and projecting in an intermediate portion are provided in a medium having a higher dielectric strength than the other side of the flange portion. A first electric field relaxation groove formed on one side of the flange, and a thickness of an insulation layer formed on the other side of the flange. An insulated conductor having a second electric field relaxation groove larger than the above.
中心導体と同軸に形成され中間部に突設されたフランジ
部の片側が前記フランジ部の他側よりも絶縁耐力の高い
媒体内に突設される絶縁層を備え、前記フランジの片側
に形成された第１の電界緩和溝と、前記フランジの他側
に形成され絶縁層の厚みが前記第１の電界緩和溝の絶縁
層の厚みよりも大なる第２の電界緩和溝と、前記中心導
体のフランジ部の他側に突設され前記絶縁層に埋設され
る断面Ｕ字状の電界緩和部を備えた絶縁導体。2. A center conductor, and one side of a flange portion formed coaxially with the center conductor on the outer periphery of the center conductor and projecting in the middle portion is provided in a medium having a higher dielectric strength than the other side of the flange portion. A first electric field relaxation groove formed on one side of the flange, and a thickness of an insulation layer formed on the other side of the flange. An insulated conductor having a larger second electric field relaxation groove and an electric field relaxation portion projecting from the other side of the flange portion of the center conductor and embedded in the insulating layer.
他側の電界緩和溝までの長さと、この電界緩和溝の直径
との比を86％以上としたことを特徴とする請求項２に記
載の絶縁導体。3. The ratio of the length from the U-shaped bottom of the electric field relaxation portion to the electric field relaxation groove on the other side of the flange to the diameter of the electric field relaxation groove is 86% or more. Insulated conductor according to.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11575794A JP3373048B2 (en) | 1994-05-30 | 1994-05-30 | Insulated conductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11575794A JP3373048B2 (en) | 1994-05-30 | 1994-05-30 | Insulated conductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07326242A JPH07326242A (en) | 1995-12-12 |
| JP3373048B2 true JP3373048B2 (en) | 2003-02-04 |
Family
ID=14670303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11575794A Expired - Fee Related JP3373048B2 (en) | 1994-05-30 | 1994-05-30 | Insulated conductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3373048B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6502674B2 (en) * | 2014-10-15 | 2019-04-17 | 日本碍子株式会社 | Polymer bushing |
-
1994
- 1994-05-30 JP JP11575794A patent/JP3373048B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07326242A (en) | 1995-12-12 |
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