JP2002022414A - Step inspecting apparatus and method of manufacturing optical guide device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing an optical guide device mounting an optical guide on a board, comprising an inspecting step capable of measuring the position of the optical guide accurately. SOLUTION: A confocal microscope using a lens having a predetermined chromatic aberration measures a step on an optical guide. The apparatus comprises a sample stage 87 for mounting a sample, white light source 81 for irradiating the sample with a white light, condensing optical systems 85, 86 for condensing a light from the sample, pin-holes 83 for passing the light condensed by the optical systems 85, 86, and imaging unit 91 for photographing the light in color, passed through the pin-hole 83. The condensing optical systems have chromatic aberrations resulting from their focal lengths different by a specified value in a wavelength range within which the imaging unit can take images. Thus an image of the step shown with a hue difference is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical waveguide device, and more particularly, to a manufacturing method including an inspection step for measuring a position of an optical waveguide device mounted on a substrate.

[0002]

2. Description of the Related Art With the spread of personal computers and the Internet in recent years, the demand for information transmission has rapidly increased. For this reason, it is desired that optical transmission with a high transmission speed be spread to terminal information processing devices such as personal computers. To achieve this, it is necessary to manufacture high-performance optical waveguides for optical interconnection at low cost and in large quantities.

As materials for optical waveguides, inorganic materials such as glass and semiconductor materials and resins are known. When an optical waveguide is manufactured from an inorganic material, a method is used in which an inorganic material film is formed by a film forming apparatus such as a vacuum evaporation apparatus or a sputtering apparatus, and the inorganic film is etched into a desired waveguide shape. . However, the vacuum evaporation apparatus and the sputtering apparatus require large-scale evacuation equipment, and are therefore large and expensive. In addition, since the evacuation step is required, the step becomes complicated. On the other hand, when an optical waveguide is manufactured using a resin, the film forming process can be performed at atmospheric pressure by coating and heating, and thus there is an advantage that the apparatus and the process are simple.

Various resins are known as resins constituting the optical waveguide and the cladding layer. Polyimides having a high glass transition temperature (Tg) and excellent heat resistance are particularly expected. When the optical waveguide and cladding layer are formed of polyimide, long-term reliability can be expected,
It can withstand soldering.

[0005]

The optical waveguide made of resin is:
Generally, it is constituted by laminating a resin lower clad layer, an optical waveguide layer and an upper clad layer on a substrate. At this time, whether or not the height from the optical waveguide to the substrate is within a predetermined range is important for accurately aligning the optical waveguide with the light emitting element or the light receiving element. When the electrode and the optical waveguide on which the light emitting element and the light receiving element are mounted are mounted on the same substrate, the amount of lateral displacement between the electrode and the electrode in the main plane direction of the substrate is within a predetermined range. It is just as important whether it is included.

[0006] When measuring the height from the center of the optical waveguide to the substrate, the contact-type profilometer cannot be used because the upper surface of the optical waveguide is covered with the upper cladding layer. Therefore, a method of measuring the height by measuring the amount of movement when the objective lens is moved from the focus position on the upper surface of the optical waveguide to the focus position on the upper surface of the substrate using a confocal microscope or the like can be considered. . However, since the focal depth of the objective lens is usually about 0.5 μm and the driving error (backlash) of the drive system of the objective lens is about 0.5 μm,
The measurement accuracy is limited to about 1 μm. However, since the thickness of the single mode optical waveguide is several μm,
A measurement accuracy of 1 μm is not sufficient.

[0007] The amount of lateral displacement between the optical waveguide and the electrode of the light receiving / emitting element is usually measured by a method of measuring the number of pixels of an enlarged image by a microscope or a method of measuring by an ocular micrometer. However, when measuring by the number of pixels, the size of the field of view and the image resolution (pixel density) determine the measurement accuracy. Consider the size of the normal electrode, and set the diameter of the visual field to 40
When the measurement is performed at a standard image resolution of 500 pixels, it is 0.8 μm per pixel, and the measurement accuracy is 0.8 μm.
μm. In addition, since the eyepiece micrometer measures by moving the index line on the magnified image, the driving error (backlash) of the driving unit that moves the index line becomes a large error, and is 2-3 μm at an objective lens magnification of 40 ×. Measurement accuracy. However, since the width of the optical waveguide is several μm,
The accuracy of these measurements is not enough.

An object of the present invention is to provide a method for manufacturing an optical waveguide device having an optical waveguide mounted on a substrate, the method including an inspection step for accurately measuring the position of the optical waveguide. Aim.

[0009]

According to the present invention, there is provided a method of manufacturing an optical waveguide device as described below.

That is, a first step of forming an optical waveguide on a part of a substrate, and measuring a step between the optical waveguide and the upper surface of the substrate. If the measurement result is out of a predetermined range, And a second step of judging a defective product.
A method for manufacturing an optical waveguide device is provided, wherein the step measurement device described below is used for measuring the step in the step (a).

The step measuring device includes a sample table on which a sample is mounted, a white light source for irradiating the sample with white light, a condensing optical system for condensing light from the sample, and a condensing optical system. A pinhole for passing the condensed light; and an imaging unit for imaging the light passing through the pinhole in color, wherein the focusing optical system focuses on a wavelength range that can be imaged by the imaging unit. A step inspection apparatus characterized in that the distance has a chromatic aberration that differs by a predetermined value.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described.

First, the configuration of an optical waveguide device 100 manufactured by the manufacturing method according to one embodiment of the present invention will be described with reference to FIG. The optical waveguide device 100 has a configuration in which an optical waveguide laminate 10 is provided on a Si substrate 1, and an electrode portion 7 is arranged in a region where the optical waveguide laminate 10 is not arranged.

The optical waveguide laminate 10 includes a lower cladding layer 3 disposed on a silicon substrate 1, an optical waveguide 4 mounted thereon, and an upper cladding layer 5 in which the optical waveguide 4 is embedded. .

Lower cladding layer 3 and upper cladding layer 5
Are all OPI-N10 manufactured by Hitachi Chemical Co., Ltd.
05 (trade name). The thickness of the lower cladding layer 3 is about 6 μm, and the thickness of the upper cladding layer 5 is about 12 μm from the surface of the lower cladding layer. The optical waveguide 4 is an OPI- manufactured by Hitachi Chemical Co., Ltd.
A polyimide film formed by using N3205 (trade name), the film thickness is about 6 μm, and the width of the optical waveguide 4 is about 6 μm.
μm.

The electrode section 7 is arranged on the silicon substrate 1. The electrode section 7 is an electrode for mounting a light emitting element, a light receiving element for monitoring the output of the light emitting element, a light receiving element, and the like.

Next, a method of manufacturing the optical waveguide device according to the present embodiment will be described with reference to FIGS.
(D) and (e) will be described with reference to FIGS.

Here, the substrate 1 has a diameter of about 12.7 c.
3 is prepared by arranging a large number of structures of FIG. 3 on the substrate 1 vertically and horizontally, and is separated by dicing in a later step to obtain a large number of optical waveguide devices 1 of FIG.
00 at a time. 1 (a) to 1 (c) and FIGS. 2 (d) and 2 (e) show a state where only a part of the wafer-like substrate 1 to be one optical waveguide device 100 is cut out for convenience of illustration. Is shown in FIG. Further, film formation, patterning, and the like are performed at once on the entire wafer-shaped substrate 1.

First, a metal film is formed on the entire upper surface of a wafer-like substrate 1 and patterned to obtain a structure shown in FIG.
The electrode part 7 is formed as shown in FIG. When patterning the electrode part 7, reference marks 107 are provided on both sides of the electrode part 7 for positioning the light emitting / receiving element mounted on the electrode.
a and 107b are formed in advance.

Next, the above-described OPI
-N1005 is spin-coated to form a material solution film.
Then, at 100 ° C for 30 minutes in a drier, then 200 ° C
The solvent is evaporated by heating for 30 minutes at
Cured by heating at 70 ° C for 60 minutes, thickness 6μ
Then, the lower clad layer 3 having a thickness of m is formed (FIG. 1B).

On the lower cladding layer 3, the above-mentioned OP
A material solution film is formed by spin coating I-N3205. Then, it was dried at 100 ° C. for 30 minutes,
The solvent is evaporated by heating at 0 ° C. for 30 minutes, and then cured by heating at 350 ° C. for 60 minutes to form a 6 μm thick polyimide film to be the optical waveguide 4.

Next, this polyimide film is patterned into the shape of the optical waveguide 4 by photolithography. At this time, in the present embodiment, a part of the pattern of the polyimide film constituting the optical waveguide 4 is placed on the reference marks 107a and 107b of the electrode part as shown in FIGS. 5 (a) and 5 (b). 60 is left. As a specific patterning procedure, first, a resist is spin-coated on the polyimide layer to be the optical waveguide 4, dried at 100 ° C., and then exposed to an image of an exposure mask with a mercury lamp. In this exposure mask, the shapes of the optical waveguide and the measurement reference mark 60 are formed. Therefore, the optical waveguide and the measurement reference mark 60
Are simultaneously exposed.

Next, the resist is developed to form a resist pattern layer. This resist pattern layer is used as an etching mask for processing the above-described polyimide film into the shape of the optical waveguide 4 and the measurement reference mark 60.
Using this etching mask, reactive ion etching with oxygen polyimide layer of the aforementioned (O ₂ -R1E)
By doing so, the optical waveguide 4 and the measurement reference mark 60
Can be formed in a large number on the substrate 1 (FIG. 1).
(C)). After that, the resist pattern layer is peeled off.

Next, OPI-N1005 is spin-coated so as to cover the optical waveguide 4 and the lower cladding layer 3. The obtained material solution film is dried in an oven at 100 ° C. for 30 minutes.
And then heated at 200 ° C. for 30 minutes to evaporate the solvent in the material solution film, and heated at 350 ° C. for 60 minutes to form an upper clad layer 5 of a polyimide film.
(D)).

In this embodiment, as shown in FIG. 4, the center of the optical waveguide 4 and the center of the electrode portion 7 are
A lateral displacement amount C indicating how much the displacement is in the in-plane direction is measured, and it is checked whether the lateral displacement amount C is within a previously measured range. In the present embodiment, the measurement of the lateral shift amount C is performed using the measurement reference mark 60 and the reference mark 107a. Since the measurement reference mark 60 and the optical waveguide 4 have been exposed and developed using the same mask, their positional relationship is guaranteed by the accuracy of photolithography. Therefore,
By measuring the displacement between the measurement reference mark 60 and the reference mark 107a, the lateral displacement C can be measured. Since the measurement reference mark 60 is formed on the reference mark 107a, an image magnified by a microscope is captured by a CCD camera until both are within the same field of view. At this time, only the focus is shifted at the same position as the image captured by focusing on the reference mark 107a as shown in FIG.
As shown in (b), an image focused and photographed on the measurement reference mark 60 is acquired. From the image of FIG. 5A, the distance A to the reference mark 107a is obtained from the number of pixels. FIG.
The distance B from the image of FIG.
E is obtained from the number of pixels. Then, the lateral shift amount C = (B +
The lateral displacement amount C can be obtained by substituting into the equation of E) / 2-A.

In this embodiment, since the measurement reference mark 60 and the reference mark 107a substantially overlap each other, the images shown in FIGS. 5A and 5B can be obtained by enlarging the field of view to 50 μm. Therefore, even when a CCD camera having a general image resolution of 500 pixels is used, the lateral displacement amount C can be measured with an accuracy of 0.1 μm / pixel.

On the other hand, as a comparative example, the measurement reference mark 60
In the case where is not provided, the image of the visual field as shown in FIG.
The distances F and G are measured, and the amount of lateral shift is obtained by substituting into the equation of lateral shift amount C = F− (1/2) G.
In this case, it is necessary to set the field of view according to the dimension of the distance G between the reference marks 107a and 107b (here, 280 μm).
When a camera having a general image resolution of 500 pixels is used, the measurement accuracy is about 0.8 μm / pixel.

As described above, in the present embodiment, the measurement reference mark 60 is formed on the reference mark 107a at the time of patterning the optical waveguide 4, so that the measurement can be performed without using an expensive CCD camera having a large number of pixels. Accuracy in lateral displacement C
Can be measured. If the lateral displacement C does not fall within the predetermined range, the product is determined to be defective. In addition, even when the optical waveguide is branched, the branched waveguide and the electrode provided corresponding thereto are
Similarly, it is possible to determine the defective product by measuring the lateral displacement amount C.

Although the reference mark 60 is formed on the electrode 7 by utilizing a part of the shape of the electrode portion 7, the measurement reference mark is provided on the separately provided reference marks 107a and 107b. 60, the lateral shift amount C can be obtained in the same manner as described above.

Next, along the direction in which the optical waveguides 4 are arranged on the wafer-like substrate 1, the two sides of the electrode portion 7, that is, the boundary between the electrode portion 7 and the optical waveguide laminate 10, are diced by dicing. Are cut in parallel, and the optical waveguide laminated body 10 above the electrode portion 7 is peeled off from the wafer-like substrate 1 in a strip shape, so that the electrode portion 7 is exposed. Thereby, the measurement reference mark 60 is also peeled off. At this time, the depth of the cut by the dicing is set to a depth that the optical waveguide laminate 10 is separated but the substrate 1 is not separated. Therefore,
At this point, the substrate 1 remains in a wafer shape. Thus, the optical waveguide laminate 10 has the shape shown in FIG. 2E in which the end face of the optical waveguide 4 is exposed toward the electrode portion 7.

Next, a Au / Sn solder layer having a desired shape is formed on the exposed electrode portion 7.

Next, a step H from the upper surface of the silicon substrate 1 exposed to the electrode portion 7 to the lower surface of the optical waveguide 4, that is, the upper surface of the lower cladding layer 4 is measured. In the present embodiment, a confocal microscope using the chromatic aberration lens shown in FIG.

The configuration of a confocal microscope using the chromatic aberration lens shown in FIG. 6 will be described. The microscope in FIG. 6 includes an illumination optical system 81, a beam splitter 82, a pinhole 83, an imaging lens 85, an objective lens 86, and a sample stage 87 on an optical axis 80 in this order. On the other hand, on the optical axis 94 separated from the optical axis 80 by the beam splitter 82, a relay lens 88, a half mirror 89, and an eyepiece 90 are arranged. Further, a color CCD camera 91 and an arithmetic unit 92 are arranged on the light beam reflected by the half mirror 89.

The imaging lens 85 is a chromatic aberration lens whose focal length in the direction of the optical axis 80 varies depending on the wavelength. here,
As shown in FIG. 7, one having a focal length difference of 40 μm from a red wavelength of 780 nm to a blue wavelength of 400 nm is used. The depth of focus of the objective lens 86 is 0.5 μm. The pinhole 83 is formed on the disk 84. A plurality of pinholes having different hole diameters are arranged on the disk 84. By rotating the disk 84, pinholes having different hole diameters can be selected and arranged on the optical axis 80.

The substrate 1 on which the electrode portion 7 is exposed is arranged on the sample stage 87, and the sample stage is so arranged as to obtain a visual field in which the optical waveguide 4 and the silicon substrate 1 beside it can be observed simultaneously as shown in FIG. 87 is moved in the X and Y directions. When white light is emitted from the illumination optical system 81, the white light passes through the beam splitter 82, becomes almost parallel light flux by the imaging lens 85, is condensed by the objective lens 86, and is irradiated on the substrate 1. The light reflected from the substrate 1 passes through the objective lens 86 and the imaging lens 85 again, and is condensed near the pinhole 83. The light passing through the pinhole 83 is reflected by the beam splitter 82, and is relayed. An image is formed by the lens 88, and an image is captured by the CCD camera 91. Also, the image enlarged by the eyepiece 90 can be observed with the naked eye.

The upper surface of the lower cladding layer 3 and the silicon substrate 1
In the ordinary confocal microscope, only the reflected light of the sample at the focal position of the objective lens 86 passes through the pinhole, and only the sample at the focal position of the objective lens 86 can be observed with a normal confocal microscope. On the other hand, in the microscope of the present embodiment, since a lens having chromatic aberration is used as the imaging lens 85, the focal position is shifted for each wavelength from red to blue. Therefore, at the focal position 93a of the objective lens 86, only the green light of the reflected light is focused on the pinhole 83 and passes through the pinhole 83, but the front focal position 93b
Then, only the red light out of the reflected light is focused on the pinhole 83 and passes through the pinhole 83. On the other hand, at the rear focal position 93c, only the blue light out of the reflected light
Focuses on and passes. Therefore, the obtained image is an image in which samples at different focal positions are color-coded for each focal position. This image is captured by the CCD camera 91 and the difference in color of the obtained image is analyzed by the arithmetic unit, so that the step H can be measured based on the color difference.

For example, when an image of the substrate 1 is obtained by focusing the objective lens 86 on the upper surface of the lower cladding layer 3, an image as shown in FIG. 8 is obtained. That is, an image in which the lower clad layer 3 is green and the silicon substrate 1 is blue is obtained.
The arithmetic unit 92 is provided for the lower cladding layer 3 specified by the user.
The hue value HueH of the pixel 95 is obtained by substituting the respective outputs of the BGR into the following equation 1 for the pixel 95 having. Similarly, the hue value HueH is obtained for a certain pixel 96 on the silicon substrate 1 designated by the user.

[0038]

(Equation 1)

The arithmetic unit 92 calculates the difference between the calculated hue value for the pixel 95 and the hue value for the pixel 96.
Further, the arithmetic unit 92 quantifies the step from the difference in the hue value between the designated pixels 95 and 96 using the relationship between the hue difference and the step obtained in advance for the sample whose value of the step is known. I do. Here, since the hue resolution of the CCD camera 91 is 8 bits = 256 divisions, a hue difference can be obtained with 256 gradations. The chromatic aberration of the imaging lens 85 is 40 μm.
Since m corresponds to 256 divisions of the hue resolution, the resolution is about 0.156 μm, and the step can be obtained with high accuracy.

Thus, the step H between the upper surface of the lower cladding layer 3 and the upper surface of the silicon substrate 1 is obtained. By adding the thickness of the optical waveguide 4 to the obtained step H, a step T from the upper surface of the optical waveguide 4 to the upper surface of the silicon substrate 1 is obtained. If the step T deviates from a predetermined range, the optical waveguide device is determined to be defective.

Thereafter, the wafer-shaped substrate 1 is cut out into strips by dicing, and further, the strip-shaped substrate 1 is cut out by dicing to complete the optical waveguide device 100. Of the optical waveguide devices 100 after completion, only non-defective products are shipped except for the optical waveguide device 100 determined to be defective in the inspection step of measuring the lateral shift amount C and the level difference T.

In the method of manufacturing the optical waveguide device 100 described above, in this embodiment, when the optical waveguide 4 is patterned, the reference marks 107a, 1
By forming the measurement reference mark 60 so as to overlap with the reference mark 07b, the reference marks 107a and 107b and the measurement reference mark 60 can be simultaneously observed in a narrow visual field. Therefore, when measuring the lateral displacement amount C between the optical waveguide 4 and the electrode portion 7, the reference marks 107a, 107
It is sufficient to measure the amount of misalignment between b and the measurement reference mark 60, and without using an expensive CCD camera with a high pixel density, the lateral displacement C can be measured with a high accuracy of 0.1 μm / pixel using a normal CCD camera can do.

The upper surface of the optical waveguide 4 and the silicon substrate 1
When measuring the step T with respect to the upper surface of the
By using a confocal microscope using an imaging lens having a predetermined chromatic aberration as the step inspection device, the step can be easily observed as a difference between color layers. Further, by converting the BGR output into a hue value using the color CCD camera 91, the step can be easily quantified, and the step can be detected with high precision at a resolution of about 0.156 μm. Also, by specifying an arbitrary point on the image, it is possible to detect a step between multiple points at once. Thereby, the step of the optical waveguide 4 covered with the upper cladding layer 5 can be measured accurately.

In the microscope of FIG. 6, the chromatic aberration of the imaging lens 85 must be such that the chromatic aberration (the amount of defocus) in the wavelength range that can be picked up by the CCD camera 91 is larger than the step to be measured. Therefore, the necessary chromatic aberration value is determined according to the range of the step to be measured,
An imaging lens 85 having such chromatic aberration is selected and used.

In the microscope shown in FIG. 6, a lens having a predetermined chromatic aberration is used as the imaging lens 85. Therefore, even when the objective lens 86 is replaced with a lens having a different magnification, the hue difference is obtained by the above method. There is an advantage that measurement can be performed by using However, the present invention is not limited to the configuration in which the imaging lens 85 is a chromatic aberration lens, and a lens having almost no chromatic aberration is used as the imaging lens 85, and a lens having a predetermined chromatic aberration is used as the objective lens 86. In this case, the measurement based on the hue difference can be performed in the same manner as in the above method.

As described above, according to the manufacturing method of the present embodiment,
Since the defective product is determined by detecting the lateral displacement amount C and the step T, the positional relationship between the optical waveguide 4 and the electrode portion 7 falls within a predetermined range in both the lateral displacement direction and the height direction. I have. Therefore, it is possible to provide an optical waveguide device in which alignment between the light receiving / emitting element mounted on the electrode portion 7 and the optical waveguide 4 is easy.

In the optical waveguide device 100 manufactured in the above-described embodiment, since all layers from the lower cladding layer 3 to the upper cladding layer are formed of polyimide, Tg is high and heat resistance is low. It is excellent. Therefore,
The optical waveguide device of the present embodiment can maintain the propagation characteristics even at a high temperature. Further, since polyimide can withstand a high-temperature process such as soldering, it is possible to solder another optical waveguide device, an electric circuit element, or a light emitting / receiving element on the optical waveguide device.

In the method of manufacturing the optical waveguide device 100 according to the present embodiment, the positional deviation between the optical waveguide 4 and the electrode portion 7 is measured with high accuracy in the inspection step, and the positional deviation is within a predetermined range. Only good products are considered. Therefore, by manufacturing an optical communication device using the optical waveguide device 100 manufactured by the manufacturing method of the present embodiment, alignment of the optical waveguide 4 with elements such as a light receiving element and a laser diode is easy, and coupling efficiency is improved. And a high-performance optical communication device with low cost can be manufactured at low cost.

[0049]

As described above, according to the present invention,
It is possible to provide a method for manufacturing an optical waveguide device in which an optical waveguide is mounted on a substrate, the method including an inspection step capable of accurately measuring the position of the optical waveguide.

[Brief description of the drawings]

FIGS. 1A to 1C are cutaway perspective views showing a schematic method for manufacturing an optical waveguide device according to an embodiment of the present invention.

FIGS. 2D and 2E are cutaway perspective views illustrating a method for manufacturing a schematic optical waveguide device according to an embodiment of the present invention.

FIG. 3 is a perspective view illustrating a configuration of a schematic optical waveguide device manufactured by a manufacturing method according to an embodiment of the present invention.

FIG. 4 is an explanatory diagram showing a displacement amount C between an optical waveguide 4 and an electrode unit 7 of the optical waveguide device of FIG. 3;

FIG. 5 shows a method for manufacturing the optical waveguide device according to the embodiment of the present invention.
(A) is an explanatory diagram showing the position measured by the image focused on the reference mark 107a of the electrode unit 7, and (b) is an explanatory diagram showing the position measured by the image focused on the measurement reference mark 60. It is.

FIG. 6 is a block diagram of a confocal microscope using an imaging lens 85 having a hue difference used for measuring a step in the method for manufacturing an optical waveguide device according to one embodiment of the present invention.

FIG. 7 is an explanatory diagram showing a hue difference of an imaging lens 85 of the microscope in FIG.

8 is an explanatory diagram showing an image obtained by the microscope in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Silicon substrate 3 ... Lower clad layer 4 ... Optical waveguide 5 ... Upper clad layer 7 ... Electrode part 10 ... Optical waveguide laminated body 60 ... Measurement reference mark 80 ... Optical axis 81 Illumination optical system 82 Beam splitter 83 Pinhole 84 Disk 85 Imaging lens having a hue difference 86 Objective lens 87 Sample stage 88 relay lens 89 half mirror 90 eyepiece 91 color CCD camera 92 arithmetic unit 95 96 pixel 100 optical waveguide device 107a 107b・ Reference mark

Continued on the front page (72) Inventor Nobuo Miyadera 48 Wadai, Tsukuba, Ibaraki F-term in Hitachi Chemical Co., Ltd. Research Laboratory 2F065 AA25 AA61 BB27 CC17 CC21 CC25 DD03 FF10 GG02 GG24 JJ03 JJ26 LL00 LL04 LL30 LL46 PP24 QQ00 TT03 2H047 KA04 MA07 PA00 TA41

Claims (10)

[Claims] 1. A sample stage on which a sample is mounted, a white light source for irradiating the sample with white light, a condensing optical system for condensing light from the sample, and light condensed by the condensing optical system A pinhole that allows light to pass therethrough, and an imaging unit that captures light that has passed through the pinhole in color, wherein the focusing optical system has a predetermined focal length for a wavelength range that can be imaged by the imaging unit. A step inspection apparatus characterized by having chromatic aberration different from each other by different values. 2. The step inspection device according to claim 1, further comprising: a calculation unit that obtains a difference in hue value of a step portion of the sample to be measured from an image captured by the imaging unit. measuring device. 3. The level difference inspection apparatus according to claim 2, wherein the calculating unit calculates a level difference corresponding to the determined hue difference value from a relationship between a previously determined hue value difference and a level difference value. A step measuring device for determining the value of 4. The step inspection device according to claim 2, wherein the arithmetic unit substitutes an output of a BGR of a pixel designated by a user among pixels forming an image of the step portion into a predetermined mathematical expression. A step measuring device for obtaining the hue value. 5. The step inspection device according to claim 1, wherein the focusing optical system includes an objective lens disposed on the sample stage side, and a light from the sample that has passed through the objective lens, is transmitted to the pinhole. An imaging lens for condensing light, wherein the imaging lens has the chromatic aberration. 6. A first method for forming an optical waveguide on a part of a substrate.
And a second step of measuring a step between the optical waveguide and the upper surface of the substrate, and determining that the product is defective if the measurement result is out of a predetermined range. A method for manufacturing an optical waveguide device, comprising using the step measuring device according to claim 1 for measuring the step in the step (c). 7. On a substrate on which a lower cladding layer is formed,
A first step of forming an optical waveguide layer and patterning the optical waveguide layer into a desired optical waveguide pattern; calculating a positional shift amount between the optical waveguide and a predetermined position on the substrate; A second step of determining that the product is defective if the shift amount is larger than a predetermined amount, and at the time of patterning in the first step, a part of the optical waveguide layer is placed on the substrate. In the second step, in order to obtain the position shift amount, the position is left on or near the predetermined position.
A method of manufacturing an optical waveguide device, comprising measuring a positional shift amount between the remaining optical waveguide layer and the predetermined position. 8. The method of manufacturing an optical waveguide device according to claim 7, wherein an electrode pattern is disposed on a part of the substrate, and in the first step, the predetermined position is set as the predetermined position. A part of the optical waveguide layer is left on a part of the electrode pattern, and in the second step, a displacement between the remaining optical waveguide layer and the electrode pattern is measured. Manufacturing method of waveguide device. 9. The method of manufacturing an optical waveguide device according to claim 8, wherein the electrode pattern includes a reference mark, and in the first step, a part of the optical waveguide layer is provided on the reference mark. The manufacturing method of the optical waveguide device characterized by leaving. 10. The method for manufacturing an optical waveguide device according to claim 8, wherein after the second step, the lower clad layer and the optical waveguide layer on the electrode pattern are removed, and the electrode pattern is removed. A method for manufacturing an optical waveguide device, comprising a step of exposing.