TW201036082A - Inspection condition data generation method and inspection system of semiconductor wafer appearance inspection apparatus - Google Patents

Abstract

A wafer inspection condition generation method for generating inspection condition data for a plurality of inspection apparatuses which inspect the appearance of semiconductor chips formed on wafers (10). The method is provided with the following steps: a step of calculating the individual difference, for each wafer inspection apparatus (A to C), from a design value, then registering individual difference correction data; a step of generating inspection condition data using a wafer (10), at any selected wafer inspection apparatus (A); a step of generating common inspection condition data from the inspection condition data and the individual correction data of the selected wafer inspection apparatus (A); and a step of generating inspection condition data for each wafer inspection apparatus (B to C), from the common inspection condition data and the individual difference correction data of the corresponding wafer inspection apparatus (B to C).

Description

201036082 IV. Designated representative: (1) The representative representative of the case is: (4). (2) A brief description of the symbol of the representative figure: 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: 6. Description of the invention: [Technical field to which the invention pertains] ◎ The present invention relates to conducting a semiconductor An inspection condition data generation method and an inspection system in a device for visual inspection of a wafer (semiconductor wafer). [Prior Art] A semiconductor chip is manufactured by laminating a plurality of circuit patterns on a substrate called a semiconductor wafer. The semiconductor wafer is formed by alternately performing a predetermined number of circuit pattern formation and a predetermined size of the semiconductor wafer during the manufacturing process. In the middle of the process, for the presence or absence of defects or foreign matter on the wafer, the presence of the semiconductor wafer is used to check the condition of the semiconductor wafer in the appearance inspection of the semiconductor wafer: the half of the inspection is the mark of the reference ( Mark) The information of the inspection conditions such as the location or arrangement of the film, the magnification of the lens used, and the brightness of the illumination

After the inspection, the inspection of the missing inspection device such as the collapse of the circuit pattern by the wafer pattern is performed. The following are the types of the conductor wafers to be inspected, the rate of the information to be inspected, and the focus group at the time of inspection. The inspection condition data 3 201036082 T When the type of the wafer to be inspected is added, the inspection is performed, and the inspection is performed. Then, in the actual inspection process, the inspection condition data is compared with the image obtained by taking the circuit pattern and the pre-registered reference image' to make the semiconductor wafer a good or defective product. In the case of checking wafer wafers, since there is an upper limit on the number of wafers that can be inspected in one inspection apparatus, the number of wafers is checked. The patent document discloses a means for estimating the resistance value of a defective portion by using a standard sample to obtain a desired inspection parameter value in a semiconductor inspection method and apparatus. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2004-3 1 9721 SUMMARY OF THE INVENTION The known inspection device is designed according to the device specifications, and the size of each portion is previously made by the field. The juice value decision is made based on the design value. However, part machining or assembly operations are usually performed within a range of precision specified as general tolerances or tolerances. Therefore, if the size of each part of the completed inspection apparatus is "° and the value of the sheet is compared", the difference in size due to the aforementioned tolerance is included. And if the plurality of inspection apparatuses are compared with each other, the difference in the aforementioned dimensions is between the apparatuses. There is also a difference, and the difference between the design value of each device and the aforementioned size is called the machine difference. These machine differences have no problem in the appearance of the device, and are not regarded in the case of using one device to inspect the wafer of the same type. However, in the case of using a plurality of devices to check, in the case of making the inspection condition data common to the 4 201036082 good or defective product, the size of the upper J-side difference is a size that cannot be ignored. Therefore, the above-mentioned machine difference is a factor that hinders the use of the inspection condition data when the inspection is performed using a plurality of sputum suction sputum devices. For the above reasons, it is known to use a plurality of 斿Inspect the device, check the wafers of the same variety, and individually create inspection articles - information, registration materials, and inspections with the respective inspection devices According to the conventional inspection condition data, the production of wow 妒 Α β Τ T T T T T Α Α — Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α T T The flow chart of the program is generated. First, the wafer appearance inspection 詈 詈 她 pick her # 一衣置1 is designed according to the specifications, the size of each part is determined in advance as the design value (S2〇i). Then, the device A is絮 you f ς 9 Π 9, reverse table (S202), use inspection device a to make pair #N (N = 1, 2, 3...) _: 乂 < mourning a check condition data #Na (N=l, 2, 3...) (S203) 〇 According to the inspection condition data (4) a, 贡 贡 抖 #Na uses the device Α to check the variety #Ν (S204), and is missing .... ..., silly, The other device is manufactured (S2 05), and the inspection condition data #Nb (for the device 成 # , , , , , λ 对 00 00 00 00 00 00 00 町 町 町 町 00 00 00 00 # # # N=1,2,3..,)(s2()6). — The root m checks the condition data #Nb, and uses the device b to perform the inspection of the variety #n - (S2〇7). Then the oblique smile is directed to the device C. Also make the same program Each specimen creating device used should save your health condition data contains a 'check (S208~S210).

As described above, even if the device is a number of devices, it is made according to the same design value. 'Because there is a difference in the cause of the field with the aforementioned tolerance A, each is treated by another device'. It is the making of inspection condition document 5 201036082 in the Japanese yen of the box.

Therefore, if the number of A units is increased, it is necessary to check the number of wafers to be inspected or the inspection condition data of the inspection device. - The time and labor of the same day. Moreover, the check operation of the inspection condition data requires a large amount of data loss, and a check system such as a system failure of the k inspection device is generated, and the condition data is checked for all the registered varieties. Because...^ _ 丨^ re-register again, check the condition data and reprint the time and labor of the great squad. The σ job needs to be reported. The purpose of the present invention is to provide a wafer inspection method. The inspection is performed on the inspection condition data of the semiconductor half-bath side: the inspection of the appearance of the beef conductor cymbal... A method and an inspection system for generating inspection condition data for each -F詈 considering the machine difference. In order to solve the above problems in each device, the invention of the first type of wafer inspection condition generation is a conductor. The inspection of a plurality of inspection devices for the appearance of a semiconductor wafer formed on a wafer is performed. - The wafer inspection device calculates the machine for the design value: the machine difference correction data registration step of the difference correction data; the $ registration machine checks the condition data in the broken selected wafer inspection device - the inspection condition data is generated Step 3: generating a check condition data generation step by the aforementioned inspection condition data and the aforementioned machine difference correction data of the selected device; and co-inspection of the condition data by the aforementioned common inspection condition Each U-test difference correction data is generated for each wafer inspection: the sixth conditional data generation step of the above-mentioned conditional data of Dunhuang. According to the invention of claim 2, in the invention of claim 1, the machine difference correction data includes at least one of the following error data: a table on which the wafer is mounted on the wafer inspection device (tab 1 e) the origin position of the inspection platform, the center position of the inspection camera for inspecting the wafer, and the error data of the center position of the wafer carried on the inspection platform; checking the focus position of the inspection camera of the wafer (focus position) Error data; error data included in the observation magnification of the lens of the inspection camera; and error data of a set value of the desired brightness included in the illumination light source of the inspection camera. The invention of claim 3 is a wafer inspection system that generates inspection condition data for a plurality of inspection apparatuses for inspecting the appearance of a semiconductor wafer formed on a wafer, including: Q. Each wafer inspection apparatus calculates a pair design The machine difference of the value, and then the machine difference correction data registration means for registering the machine correction data; 'In the selected wafer inspection device, the first inspection condition data generation means using the wafer generation inspection-inspection condition data And the common inspection condition data generation means for generating the common inspection condition data by the foregoing inspection condition data and the machine difference correction data of the selected one of the wafer inspection apparatuses; and the common inspection condition data and each wafer inspection The aforementioned 7 201036082 machine difference correction data of the device generates a second inspection condition data generation means for the inspection condition data of each wafer inspection device. The invention of claim 4 is the invention of claim 3, wherein the machine correction data includes at least one of the following error data: - inspection of a table carrying a wafer mounted on the wafer inspection device The position of the origin of the platform, the center position of the inspection camera for inspecting the wafer, and the error information of the center position of the wafer carried on the inspection platform; 0 checking the error data of the focus position of the inspection camera of the wafer; The error data of the observation magnification of the lens of the camera is checked; and the error data of the set value of the desired brightness included in the illumination light source of the inspection camera described above. [Effects of the Invention] According to the wafer inspection condition generation method and inspection system of the present invention, the difference between the Q and the wafer inspection device for the design value is obtained, and each wafer inspection device obtains the machine correction data and registers it. By using any of the plurality of wafer inspection devices to create inspection condition data, common inspection condition data that can be used in other devices can be generated, because the common inspection condition data and the machine for each wafer inspection device The difference correction data generates the inspection condition data of each wafer inspection device, so that the labor time for re-making the inspection condition data can be saved. According to this, even if a plurality of wafers are inspected using a plurality of devices, the inspection condition data of a plurality of common types can be generated in a short time, and the time and labor for re-creating the materials can be saved. [Embodiment] Embodiments of the present invention will be described with reference to the drawings. 1 is a perspective view of a wafer appearance inspection device of the present invention. Fig. 2 is a view showing the configuration of a wafer appearance inspection device according to the present invention, showing the configuration of a main machine. In each of the figures, the three axes of the orthogonal coordinate system are X, Y, and Z, and the XY plane is the water 0 plane, and the Z direction is the vertical direction. Further, it is assumed that the direction of rotation in the Z direction is the 0 direction. In the wafer appearance inspection device 1 of the present invention, the inspection platform unit 2 that carries the wafer 10 to be inspected and moves in the XY direction is included; both of them include at least a part of the imaging wafer 10; The photographic optical unit 3 of the range includes a control unit 4 for connecting the inspection platform unit 2 and the photographic optical unit 3 to the control inspection platform unit 2 and the photographic optical unit 3 in an integrated manner. In addition, the wafer visual inspection device 1 includes a wafer transport unit 5 that transports the wafer 10 to the predetermined position in order to carry the Q wafer 10 to be inspected to the inspection platform. Further, in the wafer visual inspection device, a wafer cassette 61 and a wafer cassette carrier 62 for storing the wafer before inspection or the wafer after inspection are provided. Next, each main part constituting the inspection apparatus will be described in detail. [Wafer] FIG. 3 is a view showing an example of a semiconductor wafer in which a pattern is formed on the wafer 10. Fig. 3(a) is a view showing the entire wafer, and Fig. 3(b) is a view showing a part of the expanded wafer 9 201036082. As shown in Fig. 3(a), a flat portion called a directional flattening layer 11 at one end of the wafer 被 is used as a reference for matching the directions of the wafers 10. Others in order to make the direction of the wafer 10 uniform, in addition to the above-described oriented flat side 11, there is also a case where a recess called a notch is attached to a part of the circumference of the wafer. On the wafer 1 图案, a pattern is formed: an alignment mark (a 1 ignment .mark) 1 2; a circuit pattern 13 of an electrical wiring or an insulating film of the semiconductor wafer. As shown in FIG. 3(b), the circuit pattern 13 of the electric wiring or the insulating film of the semiconductor wafer includes: an alignment mark j 2a of each wafer; a circuit portion 14; an electrode portion 15, a circuit portion 14 and The electrode portion 15 is connected in the circuit pattern 13. Fig. 3(c) is a view showing the entire wafer of another type, and Fig. 3(d) is a view showing a part of the wafer of the other type. On the wafer 10 shown in Fig. 3(c), an alignment mark 丨2 is formed in a pattern, and a circuit pattern group 16 composed of electric wirings or insulating films of a plurality of semiconductor wafers is formed. As shown in FIG. 3(d), on the circuit pattern of the electric wiring or the insulating film of the semiconductor wafer, the alignment mark 12a of each wafer, the circuit portion 14, the electrode portion 15, the circuit portion 14 and the electrode are included. The portion 15 is connected in the circuit pattern 13. In the wafer visual inspection device 1 of the present invention, the appearance of the circuit portion 14 or the electrode portion 15 of the circuit pattern 13 on the wafer as described above is examined. The alignment mark 1 2 serves as a reference for displaying the position of each wafer and circuit pattern on the wafer. The position of the alignment mark 丨 2 on the wafer 1 and the relative position of the circuit pattern 13 to the alignment mark 12 are predetermined for each type, and are determined values. 10 201036082 [Inspection platform unit] The inspection platform unit 2 is constituted by an X-axis stage 22 disposed on the apparatus base 21, a γ-axis stage 23 disposed on the X-axis stage 22, and a Y-axis stage 23 The 0-axis platform 24; the table 25 disposed on the 0-axis platform 24. The X-axis stage 22 is placed on the apparatus base 2i in a state where the γ-axis stage 23 disposed thereon can be moved in the X direction. Further, the Y-axis stage 23 is placed on the y-axis stage 22 状态 in a state in which the 0-axis stage 24 and the table 25 placed thereon can be moved in the Y direction. Therefore, the table 25 can be moved in the χγ0 direction on the device base 21. The wafer 10 is placed on the table 25 and is not displaced by vacuum suction or the like during inspection. On the other hand, when the inspection is completed, the vacuum suction is released, and the table 25 can be easily removed. The X-axis stage 22, the Y-axis stage 23, and the 0-axis stage 24 are connected to the control computer 41 of the control unit 4, and the table 25 carrying the wafer 1 can be moved to a predetermined position or left still. [Photographic Optical Unit] The photographing optical unit 3 includes an objective lens 31 that is directed to the wafer 10 at a constant interval from the wafer 10, and is placed adjacent to the objective lens 31 so as to be viewed through the objective lens 31. The image on the 10 is imaged on the optical system 33 of the inspection camera-34; adjacent to the optical system 33, an inspection camera 34 that converts the captured image into an electrical signal is placed. The objective lens 31 is prepared in plural, and the magnification at which the wafer 1 can be switched is observed by a rotation switching mechanism called a revolver mechanism 32, and is attached to the photographic optical unit 3. 11 201036082 The photographic optical unit drive unit 35 is placed on the column portion 37, and the column portion 37 is placed on the device base 21 on which the inspection platform unit 2 carrying the wafer 1 is mounted. In the photographic optical unit drive unit 35, the photographic optical unit 3 can be mounted in the Z direction and mounted. Further, the photographing optical unit 3 includes a distance measuring sensor (not shown) for measuring the distance between the wafer 10 and the objective lens 31. • Illumination is connected to the optical system 33 of the photographic optical unit 3, and a light source for makeup 34 is connected to the illumination. The brightness at the time of observation of the wafer 1 可 can be adjusted by changing the brightness setting of the illumination light source 36. Due to the inspection of the appearance of the wafer, > a device 1 is configured such that at least a portion of a ^ 1 of the wafer 1 can be imaged by the inspection camera 34. The optical system 33 has a structure including a convex lens or a concave lens of at least -y, y, or more, and passes through the objective lens 31 to align the first light toward the wafer 1 from the illumination light. The light reflected by the wafer 10 can be irradiated to the inspection camera 34 by the objective lens. [Control unit] includes in the control unit 4; έ· ., *, has an X-axis platform 0 22 connected to the inspection platform unit 2, and a shaft platform 23 and a cylinder sub-Δ _ axis σ 24 and photographic optical unit drive The part 3 5 and the illumination light source 36 are used for the control of the thunderbolt for the purpose of storing the inspection conditions - data and inspection results data management for the mine ^ a cow - camera 34 and the control computer 4I 8 The electric 1642 is connected to the inspection camera 43. The image processing with the computer 42 is connected to the control computer 41. Hernu's ii* magnetic is used to record the connected 46a. Moreover, in the above-mentioned information, the snow leg, the 'Bai's Beixun Record Media Counselor's Computer 42 is connected with the above information record for the record of 12 201036082 $ and the inspection of the image processing core or the failure. The medium is a video recording medium 46b which is a data recorded in the data recording, which is called a check result data of each inspection object, and a reference image for recording and recording inspection is connected to the computer 43. The information recording medium 46e bodies 46a, 46b, and 46C can be exemplified by magnetic or optical variable recording media or semiconductor memories such as optical disks or optical disks. The video recording medium 46c is registered with the image of the pass or fail standard, and the video of the video processing computer 43 is compared with the video of the video processing for the purpose of the determination. The object 宕 — a a a a a a a a a a 认 认 认 认 认 认 认 认 认 认 认 认 认 认 认 认 认 认 认 认In the above-mentioned control computer 41 and the above-mentioned data camping & ° computer 42, the information display means 44a for displaying the value of the operating condition and the abnormal history of the device and checking the condition data is a transmission display switching means. Me connection. Further, the image processing computer 43 is connected with an information display means 4 for displaying an image captured during the inspection, an inspection result, a defect, and the like. The information display means 44a, 44b can be exemplified by using a braun tube or a liquid crystal display or a plasma display, an organic EL or a light emitting-di ode. A display of a light-emitting element or the like. The information input means 45 for inputting or editing the setting value of the inspection condition data by the control computer 41 and the data management computer 42 and the image processing computer 43' are connected via the input switching means 45a. The information display means 44a, 44b and the display switching means 44c and the 13 201036082 information input means 45 and the round-trip switching means ❿ and the media 46a, 46b, 46c are included in the control unit 4. The data management computer 42 recorded in the control unit 4 includes the above-mentioned data of the data access means 4 and the packages 46a, 46b, and 46c for performing the data access:: the aforementioned information recording medium %冋Check condition data and various data such as the above-mentioned inspection and stoppages, and the reference image can be exchanged with other devices through the data accessor's data. The access means 47 can exemplify a means for recording a medium using a detachable data such as a dead conductor 5 or a material or a means for communicating by means of an electric signal or a k-number or radio wave. [Transportation Unit/Wafer E-Box/Pre-Alignment Device Unit (Preal igner par) The wafer transfer unit 5 includes a robot arm that is disposed adjacent to the inspection platform unit 2 and has a movable mechanism for transporting the wafer 10 ( R〇b〇t)5" Holds the hand part 52 of the wafer 10. The hand 52 is coupled to the robot f 51 feed mechanism, while holding the wafer 10 or not holding the wafer 1 〇 It is also free to move in the direction of χγζ. Moreover, the mechanical arm 51 also has a mechanism for moving in the sense direction and a mechanism for rotating the hand in the 0 direction. Further, the wafer transport unit 5 is also adjacent to the storage unit. The wafer cassette stage 62 or the pre-alignment unit 7 of the wafer S-box 61 of the circle i is arranged, and the pre-alignment unit 7 has a center position at which the wafer 1Q is realigned to the gauge position. Or the pre-alignment function of the orientation of the flat edge u or the notch in a predetermined direction. As described above, the wafer appearance inspection device 1 of the present invention is constructed. A 14 201036082 Next, for the wafer visual inspection device 1 The inspection process of the representative is described in order. [Making inspection condition data] On the wafer 10 Before the inspection, the inspection condition data is created. The inspection condition data includes: management (code, N=1, 2, 3·.·) for managing the inspection condition data; the alignment mark 12 on the wafer 10; The image of the alignment mark 1 2; the coordinate on the wafer 10; the reference image of the wafer used for the first inspection; the photographing magnification; the brightness of the illumination 0; the inspection start position; the inspection path. The case where the circle changes the observation magnification again and continues the inspection includes: the reference image of the wafer used for η (n = 2, 3, 4...) inspection; the photographing magnification; the brightness setting value of the brightness; the inspection start position; the inspection path. The crystal 10 including the semiconductor wafer processed by the good product is selected. The direction of the orientation flat sides is aligned by the pre-alignment device portion 7, and the crystal 10 is carried on the table 25 of the wafer visual inspection device 1. Secondly, The axis platform 22 and the Y-axis stage 23 are moved to a position where the alignment mark 1 2 formed on the wafer 10 can be inspected by the inspection camera 34. Then, the inspection camera 34 observes the pair on the wafer 10 Quasi-marker 1 2, the position shift amount in the ΧΥ0 direction is calculated from the difference of the pre-registered reference positions, and the line positioning operation is matched with the reference position. The semiconductor wafers patterned on the wafer 10 are selected as good products. The processed semiconductor wafer moves the X-axis stage 22 and the Y-axis stage to a position where the semiconductor wafer can be photographed by the inspection camera 34. The lens magnification is set by the number of the semiconductor wafer and the size of the defect. The circular X-shooting and the selection 23 degrees 15 51 are appropriately selected by the state in which the wafer is indefinitely in the direction of the wafer cassette 61. The illumination of the game is based on the brightness of the image taken, which is adjusted by the reflectivity or contrast of the wafer pattern on the semiconductor wafer 1〇>6/!day isA--b Decide. Also ~ Table Politics After determining the lens magnification and the brightness setting value of the captured image, the image of the semiconductor wafer processed by the inspection camera 34 is taken by the inspection machine 34. • [Selection of inspection condition data] Next, the inspection condition data of the wafer to be inspected is selected in the wafer visual inspection device 1. The aforementioned inspection condition data is selected and used among the pre-registered assets. If it is the case that the aforementioned inspection condition data is not pre-registered, it is re-registered. [Transport Wafer/Pre-Alignment/Loader Wafer] Next, a wafer 1 to be inspected is taken out using the robot case 61 of the wafer transfer unit 5. At this time, the wafer 10 to be discharged is accommodated in the wafer cassette 61 at the orientation flat or notch. Since the wafer 10 to be inspected is inspected in advance in order to be aligned, it is first transported to the pre-alignment unit 7. In the pre-alignment device portion 7, the center of rotation of the crystal 10 is rotated about the center of the crystal 10, and the orientation flat or notch is detected to make the center position of the wafer 10 coincide. The direction maintains the aforementioned directional flat or notched. Next, the pre-aligned wafer 10 is transported to the stage 25 of the inspection platform unit 2 by the pre-alignment mounting portion 7 using the robot arm 51 of the wafer transfer unit 5. Accordingly, the direction of the aforementioned directional flat or notched surface of the wafer can be carried on the stage 25 in a colored manner.比 抽 比 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 This: 'The brightness of the light from the m, π, and the source button is adjusted by the rotator mechanism 32 according to the pre-registered inspection condition data, and the backlight unit 1 is adjusted by the camera optical unit driving unit 35. The distance between the positive circle 1 and the objective lens 31 is taken by the inspection camera 34 of the photographic optical unit 3 to align the wafer 10 while being carried on the table 25 using the robot arm 51, only the actual carrying position in a series of delivery actions There may be some sliding changes, and the difference in the position of the load may be displayed by the positioning accuracy of the pre-alignment portion 7 or the conveyance position accuracy of the robot arm 51 or (4) the side slip of the wafer at the table 25. : The difference between the bearing position of the wafer is compensated, and the reference point in the field of view of the inspection camera 34 and the alignment mark 12 are calculated at the position of the m target (4). The difference in the relative position of the reference position. The photographed magnification of the objective lens 31 used for the calculated value and the photographing alignment mark is photographed. The photographing unit: the photographing magnification of the size 3 and the number of inspections. The size of p is calculated for a normal position and the offset is calculated. The intercepted beer of the wafer 10% θ + i > The difference between the angles of the directions is corrected by the Θ axis σ 24 . Therefore, even if the wafer 1 〇 includes the angle = on the stage 25, the image taken at the inspection camera % has a difference in the angle of the 0 direction.匕3 [Acquisition/Inspection of Wafer Image] 17 201036082 Then, 'Make the inspection wafer 1 0 toward inspection~ Start at Minghong according to the pre-registered inspection conditions. ^Secondary assistance. At this time, the boom shifts the objective lens 31, , r 亮度 The brightness of the light from the light source 36. 1 ° Zhou Lang from the wafer inspection 10 in the illumination check right J has the following method called "andrepeat". Right |, repeat (step to check camera 34, end of photography -: τ make round I 0 is stationary, - set, and once again, the wafer I 〇 is stationary, and if it is 拎, move to the next - check position to the next position, repeat the: 机 34 胄 再 're-shift> ― series Actions. And another | Ρ ^ has one side to make the wafer 10 continuously moving, one side of the ' 使 使 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 疑 疑 疑 疑 疑 疑 疑 疑 疑The moving position of the circle 10 is the same as the magnification of the objective lens 31 used, the distance between the objective lens 31 and the wafer 10, the sample of the month, and the condition of the inspection. The information is as described by the mechanism and means just described. On the 1st day, the yen moves 10, and the semiconductor 曰κ μ μ 7 A 跣 pattern on the wafer 10 forms an arbitrary field shot on the dry conductor cymbal, and the image processing computer & 34 Use the menu 驷43 to judge the failure of the filming. Wafer] The end of the inspection wafer 1 is being

In the case of ... π, π, and 千 2, the 递送-circle delivery position moves. Missing traitor t ^ m BB round box 61. Here, the inspection flow of the representative of the wafer visual inspection device 1 is carried out by the robot arm 51 and stored in the crystal. The receiver will explain the inspection condition data generation program while using the map. Fig. 4 is a flow chart of the inspection condition data generation program of the present invention 201036082. Fig. 0 The design value is determined by the 奘罟A, 疋(S101) before the device is manufactured, and the device A is produced according to the design value (sl 〇 2). The case of making a μ-# π 〇 device is based on the same § and even 2 as the device 装置 and device C. (S103, sm) Next, the device for obtaining the design value • ^ ^ m ^ ^ The machine difference is calculated, and the difference between the design value and the device A is calculated (S105). The machine difference display is as follows: (1) An X-axis platform for moving the stage carrying the wafer to a predetermined 〇 position in the χ γ direction And the difference between the center position of the field of view of the camera and the position of the center of the wafer at the origin position of the boring platform. (2) Adjusting the focus position of the inspection camera in the photographic unit including the inspection camera that images the wafer The difference between the origin position of the mechanism and the relative position of the focus position of the camera. (3) The difference in the magnification of the objective lens or optical system of the inspection camera included in the wafer. (4) Included in the wafer Check the camera The difference between the set values of the desired brightness at the time of the wafer photographing by the bright light source. The difference caused by the machine difference is calculated as an error data by a program described later, and the machine difference correction data is registered in the connection. The control of the device ' is recorded by the information recording medium 46a of the computer 41 (S106). Next, the device B and the device C are also created by the same program, and the machine difference from the design value is calculated, and the machine correction data is registered (Sl〇7). ~sn〇). In the inspection of the wafer, the inspection condition A is used to make the inspection condition data #A (N=i, 2, 201036082) of the device A of the variety #N (N=Bu 2, 3...). 3 ...) (SI 11) The common condition check for the variety # N (N = 1, 2, 3...) is generated from the inspection condition data #^ of the device A created in Sill and the machine difference correction data inherent to the device A. Conditional data # N (N = 1, 2, 3, ...) (S112). Then, 'the inspection condition for the device A of the product #N is generated by the common inspection condition data #N and the machine difference inherent to the device A. data#

Na (N = l, 2, 3...) (S113). Based on the aforementioned inspection condition data # N a, the inspection of the variety 〇 #N is performed using the apparatus A (S114). Then, the inspection condition data for the device B of the product #N is generated by the common inspection condition data #N and the machine difference correction data inherent to the device B#

Nb (N = 1, 2, 3 ... KS115). Then, based on the aforementioned inspection condition data #Nb, the inspection of the item #N is performed using the device b (S116). • In the case where the device C is further used, the inspection condition data #Nc (n=i, 2) for the device C of the product #N is generated from the common difference condition data #N and the machine difference correction data inherent to the device c. Then, according to the above-mentioned inspection condition data # Nc, the inspection of the variety # N is performed using the device C (s 11 8).

The machine difference data generation device is generated by the inspection condition data created by the device A. The inspection condition data of the machine condition B and the device B can also be used by the device B and the device C. The inspection condition data of the device C is generated. 20 201036082 In the above S1〇1 to SU8, an example in which three devices are used is displayed. In the case where the number of devices is increased, the sharing of the inspection condition data can be realized by operating the same program for the necessary number of devices. In addition, even if any one of the ruptures in which a plurality of slabs are installed is in a state of failure, if the machine correction data unique to the device is calculated and registered, the common inspection condition data generated by the other shoguns will be inspected. Conditions. Dividends. ^ Edge (four) is explained in detail in the diagram of the side of the needle. 0 L Machine difference in the center position of the wafer] One of the factors of the machine can be displayed as follows: X in the direction of the X direction... The origin of the axis of the wafer B... 30, and: Tailor:? Position 22° with γ circle 1. The difference in the relative position of the center position. The crystal on the table of the round 10 is carried on the wafer inspection inspection device! The central position of the design is the center of the field of view on the design of the wafer 1 on the wafer 34? Ding, and inspection photography 〇 is carried on the wafer on the table 25: Zhi. However, the actual positioning accuracy or the mechanical hand is unstable due to the change in the pre-alignment device portion 7 when it is loaded. Therefore, in the wafer 10, the wafer visual inspection device detects the alignment mark W on the wafer 10, and the camera 34 checks the computer 41 to calculate the relative position J. The control unit 4 controls [the crystal during inspection). The round difference is adjusted by 叩. 201036082 The difference between the actual center position 341 of the inspection camera 34 and the actual center position 1 0 1 of the wafer 10 in the state where the difference in the angle of the wafer 10 in the 0 direction is corrected is calculated by the machine difference. As a machine correction data. Fig. 5 is a plan view showing the positional relationship between the X-axis flat table 22 and the Y-axis stage 23 and the respective portions in the wafer appearance inspection device 1 of the present invention. Fig. 5(a) is a display of the positional relationship of each part of the design. The origin position 2 2 0 of the X-axis stage 2 2 and the origin position 0 of the Y-axis stage 2 3 are set to 2 3 0 to indicate that the position is the [zero point] in the XY plane. The design value is assumed to be a position 221 in which the X-axis stage 2 2 is moved by X0 only in the X direction by the aforementioned origin position 2 2 0, and the Y-axis stage 23 is moved only by Y0 in the Y direction by the aforementioned origin position 23 0 The center position of the table 25 of the table 25 of the position 231 is the center position of the design of the wafer 10 that is carried on the table 25, and the center of the visual field of the design of the camera 34. Position 3 4 0. Fig. 5 (b) is a plan view showing the positional relationship of each of the Q states in which the wafer is actually carried by the device to be fabricated. At this time, the difference in the angle indicating the 6» direction has been corrected, leaving only the state of the difference in the position in the XY direction. In the actually fabricated apparatus, the origin position 220 of the X-axis stage 22 and the origin position 230 of the Y-axis stage 23, and the field of view 3 3 of the inspection camera 34 in the state of being mounted on the actually fabricated apparatus 3 3 The distance from the center position 34 1 of 1 is inferior to the distance from the center position 340 of the design field of view due to the difference in tolerance. It is provided at the origin position 220 of the X-axis stage 22 and the 22 201036082 origin position 2 3 0 of the Y-axis stage 23 so that the X-axis stage 2 2 moves only X1 of X1 in the X direction, and the crucible platform 23 is placed on the side. The actual table center position of the table 25 in the direction in which only the position of the Υ 1 is moved is coincident with the center position 341 of the field of view of the inspection camera 34. Then, the relative position of the center position 340 of the design visual field to the inspection image is shifted by XI in the X direction and Υ1 in the X direction. The position of the wafer 10 actually carried on the stage 25 is further due to the positioning accuracy of the pre-alignment device portion 7 or the transport position of the robot arm 51, and further due to the side slip of the wafer 10 when the wafer 25 is loaded. The change in the like is so unstable and unstable when the wafer 10 is loaded. Therefore, the actual center position of the table does not coincide with the center position 1 0 1 of the wafer 10 to be carried. Therefore, in order to find the wafer 10 near the circumference of the wafer 10 by the inspection camera 34, the image computer 43 is used, and the obtained shape information of the wafer 10 is calculated and wafer 10 is calculated. The actual center position is 1 0 1. The difference between the actual center position q of the wafer 10 on the stage 25 at this time and the center of the field of view of the actual field of view 331 of the inspection camera 34 is Χ2 in the X direction and Υ2 in the Υ direction. ' Use the aforementioned differential XI, Yl, Χ2, Υ2 as the registration of the machine correction data for the center of the camera and the center of the wafer. [Major difference between the origin of the photographic optical unit and the in-focus position] One of the factors of the difference between the elements of the photographic unit 3 can be displayed at the origin position when the photographic unit driving unit 35 moves toward the origin position, and the focus position of 31 The difference in distance. The difference in the distance described above means that the actual position of the fine position is 4 circles at the position 34 of the position 232, and the calculation of the 101 341 position optical objective lens 23 201036082 shows the [zero, point] and the The difference between the distances of the focusing positions on the wafer 10 from the objective lens 3 i. If the focus position is shifted, the image cannot be checked. Therefore, the [zero point] in the Z direction is made to coincide with the focus position and the distance in the case where the wafer 10 is observed and inspected. However, if the position of the origin and the position of the camera 34 are inspected and the position of the camera is poor, the coordinate value of the focus position is issued in a certain device, and a movement command is issued to the wafer in the other display. The circle moves to the same focus, and the 置 value of the m-set will not focus. Therefore, it is necessary to calculate the difference between the design value and the actual value with respect to the distance between the origin position in the Z direction and the position of the inspection camera 34, and register as the difference correction data on the upper and lower positions of the photographing optical unit. Fig. 6 is a side view showing the positional relationship between the N imaging optical unit 3 and the respective portions in the wafer appearance inspection device 1 of the present invention. Figure 6 (a) shows the positional relationship of each part on the display factory and # a. The position of the photographic optical unit driving unit 35 at the position of the photographic optical unit 35 is a position indicating that the position is [zero point] in the Z direction. When the Q design value is such that the photographic optical unit driving unit 35 moves Z0 downward from the origin position toward the Z direction, the objective lens 31 is in focus, and the position of the photographic light unit driving unit 35 at this time is regarded as a design lens. The focus position is 31〇. - Set the distance between the lens focus position 3 1 前述 of the aforementioned design and the design surface position 晶圆 of the wafer to be DO. Fig. 6 (b) is a side view showing the positional relationship of each part in the device actually produced. In the actually fabricated apparatus, the distance between the lens focus position 310 of the design and the actual surface position ιοί of the wafer is set to D1. In the case of the production of the 24th 201036082, the difference between the above (4) and the 耵 is due to the tolerance, so that the origin position 350 of the photographic optical unit drive unit is only moved downward in the Z direction. The distance of Z0 is out of focus in the lens focus position 3 1 〇 of the aforementioned design. It is assumed that the actual surface position i 1〇lz of the wafer is on the wafer (four), and the surface position ιοο is offset by only ζι in the z direction. In this case, the actual lens focus position 311 is located at a position shifted by a distance of Z1 from the designed lens in-focus position 310 toward the two directions. That is, the difference between DO and D1 and Z1 become the difference between the upper and lower positions of the photographic optical unit. When a plurality of objective lenses 31 are used for this Z1, the actual lens focus position 311 of each objective lens 31 is different. Therefore, for all the *^L, the focus position of the objective lens 31 is the difference between the value of the nose and the actual value, and the left field is corrected for the difference between the origin and the focus position of the photographic optical unit. Registration of information. Jiaping [machine difference of observation magnification of objective lens or optical system] The factor of machine difference - can display the objective lens 3 used in photography 3 or the actual magnification in the inspection camera 34 and S to be used for the objective lens 31 Or the lens of optical system 33 includes an aspect ratio. Due to the dimensional error during loading, there is a case where the design has a magnification and a difference in processing or group magnification and aspect ratio. That is, the Shi Huang ratio and the actual 'image Μ μ a. • rec〇Snition) are taken by the inspection camera 34 of a certain device (the number of pixels of the image of the known size of the reference mark, the wafer taken The number of pixels in the case where the image is recognized by the image on the 10th and the other device are required to calculate the design: 敎 when the predetermined size is observed. The difference in the number of factors is taken as the difference correction with respect to the observation magnification. Fig. 7 is a plan view showing the relationship between the size of the optical system and the size of each part in the wafer visual inspection device of the present invention. Fig. 7(a) is a view showing the appearance of the wafer on the design. A plan view of a state in which the above-described size reference mark 17 of a known size is captured by the photographing optical unit 3 in the photographing apparatus 1. The objective lens 31 and the optical system 33 are often constituted by using a plurality of lenses, respectively, but in the present description, One lens is illustrated. - First, 'select the aforementioned size reference mark 17 of the known size patterned on the wafer 10. The size reference mark I is transmitted through the objective lens 31 and the optical system. 33 is taken as a size reference mark 丄7〇 in the field of view 3〇a of the design of the inspection camera 34. At this time, the design visual field 330b on the wafer is in the range shown in the figure. The size of Λμπ v , 7 is known as 'the size in the X direction is MxO, the size in the Y direction is the size base in the 扪 扪 330 330a, 、, Υ. At this time, the image is taken in the aforementioned field of view card mark 1 7 η & v

The number of pixels in the direction is Qy〇. The number of pixels in the direction is Qx〇, Y. If the x-direction inflammation is defined, the formula (1), (2) 〇 can be α χ〇, and the γ direction can be resolved. ) The resolution of the smock image is [Formula 1] αχΟ =

MxO

QxO

[Formula 2]

ayO

MyO

Qy〇 Ο 201036082 The above image resolution means a design ruler for the object of 1 pixel of the &1; and Fig. 7(b) of the machine 34 is displayed. The appearance of the 夯 夯 罝 f f f 外观 外观 々 ... ... ... ... ... ... ... 拍摄 拍摄 拍摄 拍摄 拍摄 拍摄 拍摄 拍摄 拍摄The life system (4) of the above-mentioned size reference on the wafer 10 is taken for inspection photography: 34: the size reference mark 丨7丨 in the objective lens 31, the actual viewing size is known, and the X direction is set as described above. Dimensional reference beam] ,. Dimensions, in the Y direction, at this time, the y 3 of the size reference mark 171 taken within the size of the gate is #3 # . π 1 , the pixel in the Χ direction The number is QX and the number of gamma pixels is Qyl. Moreover, the actual field of view 331b on the 曰B a yen is in the range of display. The size of the X7 of the I7a whose size is unknown is the right, and the size of the direction of the I7a of the I7a is My2. The size of the image taken in the field of view 331a of the aforementioned inspection camera 34 is decentered. The actual X-square prime number is Qx2, and the number of pixels in the Y direction is Qy2, and the relationship can be expressed by (3) to (8). [Formula 3]

Mx2: Qx2 = MxO: Qxi [Formula 4]

My2: Qy2 = MyO: Qyl [Equation 5] Μχ2··2 Photography Element Use the photo ί· view. With the angle of the optical f 331a 7 , the direction of My0 〇 f 331a is the image of the actual direction of the image Mx2, Y with the formula 201036082 [Formula 6]

My2 =

MyO QyT • Qy2 Moreover, if the image resolution in the X direction is defined as axl and the image resolution in the Y direction is a y 1, it can be expressed by equations (7) and (8). [Formula 7] αχί =

MxO

Qxl

[Formula 8] oyl =

MyO QyT The above-described image resolution means the actual size of the object to be photographed for one pixel of the photographing element of the inspection camera 34. This image resolution differs depending on the combination of the objective lens 31 or the optical system 33. Therefore, in the combination of the objective lens 31 and the optical system 33, the difference between the number of pixels on the design and the actual number of pixels when the predetermined size is observed is calculated, and the difference correction data registration is performed as the observation magnification q. [The difference between the brightness setting value of the light source for illumination and the brightness] One of the factors of the machine difference indicates the amount of light used in the light source for photography - the difference between the set value and the actual brightness. In the wafer visual inspection device 1, the brightness of the illumination light source 36 is set by a control signal from the control computer 41. In the control computer 41, since the control signal is a numerical value, that is, a digital signal, no difference is generated. 28 201036082 However, the illumination dimming unit in the illumination source 36 from the control computer 41 is analogous. Moreover, even if the deviation of the analog signal of the brightness control or the illumination of the light to the objective lens is transposed or by the objective lens to the inspection by the optical system - each device becomes a machine difference. Therefore, even if the brightness set by the control computer 4 1 is set in the plurality of units 1 , there is a case where the actual brightness is poor. U Therefore, it is necessary to use the set value of the brightness of the wafer illumination to be used as a reference, and to measure the actual set value of the predetermined brightness and the actual difference correction data about the brightness and the set value. FIG. 8 ( a ) It is a graph showing the relationship of the brightness setting of the light source for illumination. The vertical axis is the brightness B and the horizontal brightness setting value A. If the brightness setting value DA 0 DP0 is used as the dark point, as the brightness setting value BA0 i 明 of the bright point, the brightness setting value of the illumination source is the formula (9), which is designed as 'BC0', 1 0 ) indicates the relationship [Equation 9]

B: Bp〇-DpO Λ BaO - DaO is also [Equation 10] g light source 3 6 or control signal for the same brightness control 'also due to illumination [rate (transmission of the light transmittance of the film, the wafer appearance inspection device The set value is the same 'also, and the brightness is gradually changed. In order to obtain the difference between the set values, the brightness of the design as the brightness value of the lighting source is set as the brightness of the design. The brightness becomes as in the equation 0 29 201036082 .BaO-DaO u

A ---B

BpO - DpO Using the above formula (10), the brightness setting value A of the illumination light source for the desired brightness B can be calculated. Fig. 8(b) is a graph showing the relationship between the brightness setting value of the illumination light source and the actual -. The vertical axis is the brightness B, and the horizontal axis is used for illumination. The value 0 of the actual illumination light source of the luminance DP0 which is regarded as the dark spot is DA1, and the luminance setting value of the actual source of the luminance BP0 which is the bright point is B A1. Therefore, the light value of the illumination light source and the actual brightness become the relationship expressed by the formula (11) as shown by BC1. [Formula 11] B = BpO-DpO A Bal-Dal That is Q [Formula 12] A Bal-Dal ^

A =--B

BpO - DpO Using the above formula (12), the brightness setting value A of the illumination light source for the desired brightness B can be calculated. In the above formulas (10) and (12), the difference between the set value of the desired brightness and the actual set value is the same for each actual production, and becomes a machine difference. Moreover, due to the use of the objective lens 31 or the brightness of the optical system, the brightness of the light source is set by the illuminance setting (12). The actual design of the device is not integrated. 3 3, 30 201036082 Check the combination of the camera 34 to check the camera. But the festival is different. Therefore, in the combination of all the objective lenses 31 i 3 4 used, the difference between the brightness setting of the desired brightness of the camera 31 or the optical system 33 and the inspection camera is calculated as a difference in the brightness of the illumination.

Positive data registration.

Common inspection condition data that can be used in other devices. Then, in the device of the other device, the inspection condition data for the device is generated from the aforementioned difference correction data and the aforementioned common inspection condition data. Therefore, it is not necessary to perform the operation of creating the inspection condition data for each item by all the devices as in the conventional device, and there is no need to re-register the inspection condition data in the event of a system failure or the like. _ As a result, the inspection condition data of a common plural variety can be generated in a short period of time, and the time and labor for re-creating the materials can be saved. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of a wafer appearance inspection device of the present invention. Fig. 2 is a view showing the configuration of a wafer appearance inspection device of the present invention. Fig. 3 is a view showing an example of a semiconductor wafer in which a pattern is formed on a wafer. Fig. 4 is a flow chart showing a procedure for generating an inspection condition data of the present invention. Fig. 5 is a plan view showing a positional relationship between an X-axis flat a and a Y-axis stage and respective portions in the wafer appearance inspection device of the present invention. 201036082 Fig. 6 is a side view showing the positional relationship between the photographing optical unit 3 and the respective portions in the wafer appearance inspection device of the present invention. Fig. 7 is a plan view showing the relationship between the size of the optical system and the size of each part in the wafer appearance inspection device of the present invention. Fig. 8 is a graph showing the relationship between the set value of the illumination light source and the brightness in the wafer appearance inspection device of the present invention. Fig. 9 is a flow chart showing a conventional inspection condition data generating program. 0 [Description of main component symbols] 1 : Wafer visual inspection device 2 : Inspection platform unit 3 : Photographic optical unit 4 : Control unit 5 : Wafer transport unit I 0 : Wafer II : Oriented flat edge Q 1 2 : Aligned Mark 12a: alignment mark of each wafer - 13: semiconductor wafer circuit pattern. 1 4 · semiconductor wafer circuit portion 1 5 : semiconductor wafer electrode portion 1 6 : semiconductor wafer group 17, 17a: size reference mark of known size 21: device base 32 201036082 2 2 : X-axis platform 23: Y-axis platform 24: 0-axis platform 25: table 3 1 : objective lens 32: rotator mechanism 3 3 : optical system 34: inspection camera 0 35: photographic optical unit drive Part 36: illumination light source 37: pillar portion 41: control computer 4 2: data management computer 4 3 : image processing computer 4 4 a, 4 4 b : information display means 4 4 c : display switching means q 4 5 : Information input means 4 5 a : Input switching means - 46a, 46b, 46c: Information recording medium. 47: Data access means 5 1 : Robot arm 52: Hand 6 1 : Wafer cassette 62: Wafer cassette Carrier 33 201036082 1 0 0 : Center position of the wafer design 1 0 0 Z : Wafer design Surface position 1 0 1 : actual center position of the wafer 101z: actual surface position of the wafer 170: size base taken in the field of view of the design of the inspection camera - reference mark 171: taken at the inspection camera Dimensional reference mark in the actual field of view 2 2 0 : Origin position of the X-axis platform 22 1 : Position of the X-axis platform moving only X0 in the X direction from the origin position 2 2 2 : X-axis platform from the origin position Position X1 that moves only in the X direction 2 3 0 : Origin position 231 of the Y-axis platform: Position 232 where the Y-axis platform moves only Y0 in the Y direction from the origin position: The Y-axis platform is in the Y direction from the origin position Move only the position of Y1 2 5 0 : Design the center position of the table 3 1 0 : Design the lens focus position 3 11 : Actual lens focus position 330, 330a, 330b: Check the visual field of view 331 , 331a of the camera 331b: Checking the actual field of view 340 of the camera: Checking the center position of the visual field of the camera design 341: Checking the center position of the actual field of view of the camera 3 5 0 : Origin position 34 of the imaging optical unit drive unit

Claims (1)

201036082 VII. Patent application scope: 1. A wafer inspection condition generation method, which generates inspection condition data of a plurality of inspection devices for inspecting the appearance of a semiconductor wafer formed on a wafer, comprising: each wafer inspection device calculates a pair design The machine difference of the value, followed by the registration machine-difference correction data difference correction data registration step; in any of the selected wafer inspection devices, the first inspection condition data generation step of using the wafer to generate inspection condition data; And generating, by the inspection condition data and the machine difference correction data of the selected one of the wafer inspection devices, a common inspection condition data generation step of the common inspection condition data; and checking the common inspection condition data and each wafer The machine difference correction data of the device generates a second inspection condition data generation step of the inspection condition data of each wafer inspection device. 2. The method for generating wafer inspection conditions according to item 1 of the patent application scope, wherein the machine difference correction data includes at least one of the following error data: Ο an inspection platform of the wafer carrying device supporting the wafer inspection device The origin position, the center position of the inspection camera for inspecting the wafer, and the error data of the center position of the wafer carried on the inspection platform; . Checking the error data of the focus position of the inspection camera of the wafer; included in the inspection camera The error data of the observation magnification of the lens; and the error data of the set value of the desired brightness included in the illumination light source of the inspection camera. 35 201036082 3. A wafer inspection system for generating inspection condition data for a plurality of inspection devices for inspecting an appearance of a semiconductor wafer formed on a wafer, comprising: each wafer inspection device calculating a machine difference from a design value, and then registering The machine difference correction data registration means for the machine difference correction data; the first inspection condition data generation means for using the wafer generation inspection condition data in any of the selected wafer inspection apparatuses; and the inspection condition data and the The machine difference correction data of the selected wafer inspection device generates a common inspection condition data generation means for the common inspection condition data; and the common inspection condition data and the machine difference correction data of each wafer inspection device are generated The second inspection condition data generating means of the inspection condition data of each wafer inspection device. 4. The wafer inspection system of claim 3, wherein the difference correction data includes at least one of the following error data: an origin position of the inspection platform of the wafer carrying device of the wafer inspection device And an error data of the center position of the inspection camera for inspecting the wafer and the center position of the wafer carried on the inspection platform; checking the error data of the focus position of the inspection camera of the wafer; - included in the lens of the inspection camera Observing the error data of the magnification; and error data of the set value of the desired brightness included in the illumination light source of the inspection camera. 36