CN117012688A - Wafer detection positioning correction method and system - Google Patents
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Abstract
The application discloses a wafer detection, positioning and correction method and a system, wherein the method comprises the following steps: acquiring the circle center of the correction wafer adsorbed on the wafer carrier; acquiring a crystal grain Map of the correction wafer according to the acquired circle center of the correction wafer and the crystal grain design size of the correction wafer; performing axial alignment on the correction wafer adsorbed on the wafer carrier and the precise motion platform; acquiring a positioning correction matrix of the correction wafer according to the acquired crystal grain Map of the correction wafer and the crystal grain pattern of the wafer after alignment; and carrying out positioning correction on the wafer to be detected according to the acquired crystal grain spacing and the positioning correction matrix of the wafer for correction, and then carrying out wafer detection. The application uses the crystal grain pattern of the wafer as the calibration plate for wafer detection, positioning and correction, realizes the positioning and compensation of the wafer detection by utilizing the characteristics of high precision and high reliability of the crystal grain pattern of the wafer, has simple and convenient operation and low realization cost, and effectively improves the precision of the wafer defect detection.
Description
Technical Field
The application relates to the technical field of wafer detection, in particular to a wafer detection positioning correction method and a wafer detection positioning correction system.
Background
The wafer detection device is used for detecting submicron defects of a wafer, and comprises an XY platform for precise movement, a large-view-field and high-resolution camera and a high-magnification and high-numerical aperture objective lens. In the process of carrying out defect scanning (0.2 um defect) and defect review on a wafer, the positioning accuracy of a submicron level (0.2 um) on an XY axis of a precise motion platform is required to ensure that a wafer detection device cannot deviate from a defined detection area when scanning, a large deviation (3 um) is avoided when an algorithm defines a defect coordinate, and the defect can be ensured to be in the center of a microscope or an electron microscope visual field when the defect is reviewed. To meet this requirement, a method of performing 2D Mapping correction on the XY axis of the precision motion stage according to the die pattern of the wafer is proposed.
Two similar schemes have been retrieved:
the first scheme discloses a precision platform precision metering and compensating method based on glass cutting technology, light source emitted by a laser is collimated and expanded by an optical system and then is led into a specific pattern through a pattern generator, the specific pattern is led into the pattern generator which is connected with an editable controller, then is led into an inclined beam splitter, is focused by a lens group and is cut by a laser cutting head, the precision platform is moved, the led-in pattern is marked on a glass substrate in sequence regularly, mark points on the glass substrate are measured by a secondary component measuring tool, coordinates of the corresponding points are obtained, the pattern is reflected into a CCD camera by the beam splitter, and then the obtained pattern is stored and recorded by an image processing device, so that a two-dimensional data table is obtained. The application can form a measuring instrument by using a proper laser and a cutting head, the consumable adopts a glass substrate with low price, the measuring head is arranged on a Z axis, and when a precision platform moves, the marking work can be automatically completed, and the XY axis positioning compensation method with simple use and low price is adopted.
The second scheme discloses a chip mounter XY axis positioning compensation method, which comprises the following steps: determining a conversion relation between the downward-looking camera and the mechanical coordinates; acquiring second image coordinates of the calibration points on four corners of the second calibration plate and second mechanical coordinates of the corresponding camera center point of the downward-looking camera, and traversing boundary conditions of the whole second calibration plate; sequentially acquiring third image coordinates of other calibration points except the calibration points on the four corners and fourth mechanical coordinates of a camera center point of the corresponding downward-looking camera; establishing a coordinate searching linked list; and calculating the difference value between the current mechanical coordinate and the first mechanical coordinate by a bilinear interpolation method to obtain compensation values of an X axis and a Y axis.
The above two methods have the following disadvantages:
1. the precision platform precision metering and compensating method based on glass cutting technology is suitable for laser cutting platform, and the method needs to measure the mark error on glass with measuring tool after marking on glass and then compensate XY axis.
2. The XY axis positioning compensation method of the chip mounter is suitable for occasions with low precision and calibration plates, the method cannot be used for wafer detection equipment, and the specific implementation method is different from the method;
and 3. The XY axis motion platform is limited to the assembly and installation precision of mechanical manufacture, and the XY positioning precision is difficult to reach the level of 0.2 um.
Disclosure of Invention
The application aims to overcome the defect that in the prior art, the XY direction between an XY motion platform and a pattern wafer has positioning errors or causes failure of scanning defects, and the defect review exceeds the defect that the difference is eliminated by compensation and correction; and if the Wafer grain pattern is not used as a calibration plate, the standard Wafer which can reach the level of 0.2 microns in the market is few and the price is high, and the Wafer detection, positioning and correction method and the system are provided.
In a first aspect, the present application provides a wafer inspection positioning correction method, including the steps of:
acquiring the circle center of the correction wafer adsorbed on the wafer carrier;
acquiring a crystal grain Map of the correction wafer according to the acquired circle center of the correction wafer and the crystal grain design size of the correction wafer;
axially aligning the correction wafer adsorbed on the wafer carrier with the precise motion platform to obtain a crystal grain pattern of the aligned correction wafer;
acquiring a positioning correction matrix of the correction wafer according to the acquired crystal grain Map of the correction wafer and the crystal grain pattern of the wafer after alignment;
and carrying out positioning correction on the wafer to be detected according to the acquired crystal grain spacing and the positioning correction matrix of the wafer for correction, and then carrying out wafer detection.
According to a first aspect, in a first implementation manner of the first aspect, the step of acquiring a center of a circle of the calibration wafer adsorbed on the wafer stage specifically includes the following steps:
selecting at least 3 point coordinates of the edge of the wafer for correction by using a high-power microscope;
and acquiring the center coordinates of the wafer to be tested according to at least 3 points of coordinates of the selected round edge of the wafer for correction.
According to a second implementation manner of the first aspect, the step of axially aligning the calibration wafer adsorbed on the wafer stage with the precision motion platform to obtain the grain pattern of the aligned calibration wafer specifically includes the following steps:
grabbing a first corner point of the wafer for correction in the X direction by using a micro optical head;
moving the Y axis to a second corner point in the X direction of the wafer for correction;
acquiring Y-direction angle deviation between the wafer to be measured and the precision motion platform according to the coordinates of the first corner point and the coordinates of the second corner point;
and controlling the precise motion platform rotating shaft to perform alignment compensation according to the obtained Y-direction angle deviation, and obtaining the crystal grain pattern of the aligned wafer for correction.
According to a third implementation manner of the first aspect, the step of obtaining the positioning correction matrix of the correction wafer according to the obtained Map of the crystal grain of the correction wafer and the crystal grain pattern of the wafer after alignment specifically includes the following steps:
calculating and acquiring X-axis theoretical coordinates and Y-axis theoretical coordinates of grain corner points of the wafer for correction according to the circle center of the detected wafer and the grain design size;
grabbing an angular point image of each crystal grain of the correcting wafer by using a microscopic optical head, and calculating and acquiring an X-axis coordinate and a Y-axis coordinate of each angular point of each crystal grain of the correcting wafer;
and acquiring a positioning correction matrix of the correction wafer according to the acquired X-axis theoretical coordinate and Y-axis theoretical coordinate of the die corner point of the correction wafer and the acquired X-axis coordinate and Y-axis coordinate of the die of the correction wafer.
According to a third implementation manner of the first aspect, in a fourth implementation manner of the first aspect, the step of obtaining a positioning correction matrix of the wafer for correction according to the calculated X-axis theoretical coordinate and Y-axis theoretical coordinate of the crystal angle of the obtained crystal grain and the X-axis coordinate and Y-axis coordinate of each corner point of the wafer to be tested specifically includes the following steps:
acquiring a difference matrix of X-axis coordinates and a difference matrix of Y-axis coordinates of the corner points of each crystal grain of the wafer to be tested according to the acquired X-axis theoretical coordinates and Y-axis theoretical coordinates of the corner points of the crystal grain of the wafer for correction and the acquired X-axis coordinates and Y-axis coordinates of the crystal grain of the wafer for correction;
and according to the obtained difference matrix of the X-direction coordinates and the obtained difference matrix of the Y-direction coordinates of each crystal grain of the wafer to be tested, filling the edge blank parts of the X-direction difference matrix and the Y-direction difference matrix by utilizing a two-dimensional interpolation algorithm, and obtaining the complete positioning correction matrix of the wafer to be tested.
In a fifth implementation manner of the first aspect, according to the first aspect, the calibration wafer is a standard wafer or a qualified wafer.
In a sixth implementation manner of the first aspect, according to the first aspect, the axial alignment is an X-direction axial alignment or a Y-direction axial alignment.
In a second aspect, the present application further provides a wafer inspection positioning correction system, including:
the wafer detection equipment comprises a precise motion platform, a wafer carrying platform, a correcting wafer and a microscopic optical head, wherein the correcting wafer is adsorbed on the wafer carrying platform, and the wafer carrying platform is in driving connection with a rotating shaft of the precise motion platform;
the positioning correction matrix acquisition module is used for acquiring a crystal grain pattern of a wafer by using wafer detection equipment as a calibration plate to acquire a positioning correction matrix of the wafer for correction;
the shaft controller is in communication connection with the positioning correction matrix acquisition module, and is connected with the rotating shaft of the precision motion platform, and the shaft controller is used for controlling and driving the rotating shaft of the precision motion platform to drive the wafer carrying platform to carry out positioning compensation according to the acquired positioning correction matrix.
According to a second aspect, in a first implementation manner of the second aspect, the wafer inspection device further includes an image acquisition module, where the image acquisition module is configured to capture a feature map of an image of a wafer to be inspected when the micro-optical head is positioned at a preset position.
In a second implementation form of the second aspect according to the first implementation form of the second aspect, the image acquisition module is an image acquisition CCD.
Compared with the prior art, the application has the following advantages:
the wafer detection positioning correction method provided by the application uses the grain pattern of the wafer as a calibration plate for positioning correction, and realizes the positioning compensation of the wafer detection by utilizing the characteristics of high precision and high reliability of the grain pattern of the wafer.
Drawings
Fig. 1 is a schematic diagram illustrating capturing coordinates of three points on a wafer edge according to an embodiment of the present application;
fig. 2 is a schematic diagram illustrating capturing of wafer corner points according to an embodiment of the present application;
fig. 3 is an X-axis deviation table of a wafer corner provided in an embodiment of the present application;
fig. 4 is a Y-axis deviation table of wafer corner points according to an embodiment of the present application;
fig. 5 is an X-direction deviation diagram of 6 columns of die corner points in the middle of X-direction movement of a wafer according to an embodiment of the present application;
FIG. 6 is a graph showing Y-direction deviation of corner points of 8 rows of dies in the middle of the Y-direction movement of a wafer according to an embodiment of the present application;
fig. 7 is an X-direction deviation diagram of corner points of 3 columns of dies in the middle of X-direction movement after wafer Mapping according to an embodiment of the present application;
fig. 8 is a Y-direction deviation diagram of corner points of 8 columns of crystal grains in the middle of Y-direction movement after wafer Mapping according to the embodiment of the application;
FIG. 9 is a functional block diagram of a wafer inspection positioning correction system according to an embodiment of the present application;
fig. 10 is a device diagram of a wafer inspection positioning correction system according to an embodiment of the present application.
In the figure, 1, an image CCD is acquired; 2. a micro-optical head; 3. a wafer for correction; 4. a wafer carrier; 5. a precision motion platform; 6. a positioning correction matrix acquisition module; 7. a shaft controller.
Detailed Description
Reference will now be made in detail to the present embodiments of the application, examples of which are illustrated in the accompanying drawings. While the application will be described in conjunction with the specific embodiments, it will be understood that they are not intended to limit the application to the described embodiments. On the contrary, it is intended to cover alternatives, modifications, and equivalents as may be included within the spirit and scope of the application as defined by the appended claims. It should be noted that the method steps described herein may be implemented by any functional block or arrangement of functions, and any functional block or arrangement of functions may be implemented as a physical entity or a logical entity, or a combination of both.
The present application will be described in further detail below with reference to the drawings and detailed description for the purpose of enabling those skilled in the art to understand the application better.
Note that: the examples to be described below are only one specific example, and not as limiting the embodiments of the present application necessarily to the following specific steps, values, conditions, data, sequences, etc. Those skilled in the art can, upon reading the present specification, make and use the concepts of the application to construct further embodiments not mentioned in the specification.
The existing precision platform precision metering and compensating method based on the glass cutting technology is suitable for a laser cutting platform, a measuring tool is also required to measure the marked error on the glass after marking on the glass, and an XY axis is compensated.
The XY axis axial movement of the precision moving platform is limited to the assembly and installation precision of mechanical manufacture, the longitude and latitude precision is difficult to reach the level of 0.2um, positioning errors exist between the XY moving platform and the XY axis of the wafer, scanning failure of wafer defects can be caused, defects are rechecked and exceed the requirements of eliminating differences through compensation and correction, and the defect detection efficiency and the defect detection precision of the wafer are reduced.
In view of the above, the present application provides a wafer inspection positioning correction method, which uses a high-precision wafer grain pattern as a calibration plate for positioning correction to perform inspection positioning correction on a wafer inspection device, and specifically includes the following steps:
s1, adsorbing a wafer for correction on a wafer carrier of wafer detection equipment to obtain the circle center of the wafer for correction;
s2, acquiring a crystal grain Map of the correction wafer according to the acquired circle center of the correction wafer and the crystal grain design size of the correction wafer;
s3, axially aligning the correction wafer adsorbed on the wafer carrier with the precise motion platform to obtain a crystal grain pattern of the aligned correction wafer;
s4, acquiring a positioning correction matrix of the correction wafer according to the acquired crystal grain Map of the correction wafer and the crystal grain pattern of the wafer after alignment;
and S5, carrying out positioning correction on the wafer to be detected according to the acquired grain spacing and the positioning correction matrix of the wafer for correction, and then carrying out wafer detection.
According to the wafer detection method provided by the application, the grain pattern of the wafer is used as the positioning correction calibration plate for detecting the wafer defects, the positioning correction of the wafer defects is realized by utilizing the high-precision etching precision of the wafer grains, the operation is simple and convenient, the realization cost is low, the positioning correction precision is high, and the precision and the efficiency of the wafer detection equipment on the wafer defects are effectively improved.
In one embodiment, in step S1, the center of the calibration wafer adsorbed on the wafer stage is obtained by:
step S11, as shown in FIG. 1, selecting at least 3 point coordinates (x 1 ,y 1 ),(x 2 ,y 2 ),(x 3 ,y 3 )；
Step S12, obtaining a center coordinate (x) according to a circle formula equation and at least 3 point coordinates of the selected wafer edge for correction 0 ,y 0 ) And obtaining the center coordinates of the wafer to be tested.
At least 3 points of the round edge have 3 or more coordinates. The circle center of the wafer for correction can be obtained with high precision by using the 3-point coordinates of the round edge as the obtaining basis of the positioning correction matrix.
In an embodiment, in the step S2, the upper computer PC draws a Map of the crystal grains of the calibration wafer as shown in fig. 2 according to the design size of the crystal grains of the calibration wafer and the spacing between the crystal grains, and more specifically, the size of each crystal grain in the Map is 11.62467mm× 15.462mm.
In one embodiment, the step S3 specifically includes the following steps:
grabbing a first corner point of the wafer for correction in the X direction by using a micro optical head;
moving the Y axis to a second corner point in the X direction of the wafer for correction;
acquiring Y-direction angle deviation between the wafer to be measured and the precision motion platform according to the coordinates of the first corner point and the coordinates of the second corner point;
and controlling the precise motion platform rotating shaft to perform alignment compensation according to the obtained Y-direction angle deviation, and obtaining the crystal grain pattern of the aligned wafer for correction.
In a more specific embodiment, the step S3 specifically includes the following steps:
as shown in fig. 2, the micro-optical head is used for grabbing a circle X-direction grain angular point Mark1, an XY axis is moved, a micro-optical head visual field cross Mark is aligned with the grain angular point Mark1 in a superposition mode, a Y axis is moved to an X-direction grain angular point Mark2, a picture is taken, an upper computer PC calculates Y-direction angle deviation dθ according to image Mark deviation, and then the Y-direction angle deviation dθ is sent to the axis controller to drive a precise motion platform rotating shaft to supplement deviation, so that the X-direction of the wafer for correction is ensured to be parallel to the X-direction of the precise motion platform.
In other embodiments of the present application, the Y axis of the calibration wafer may be aligned with the Y axis of the precision motion stage under the microscope head.
In one embodiment, the step S4 specifically includes the following steps:
according to the obtained center coordinates of the detected wafer and the design size 11.62467mm× 15.462mm of the crystal grains, calculating and obtaining the X-axis theoretical coordinates and Y-axis theoretical coordinates of the corner points of the crystal grains of the wafer for correction;
grabbing an angular point image of each crystal grain of the correcting wafer by using a microscopic optical head, and calculating and acquiring an X-axis coordinate and a Y-axis coordinate of each angular point of each crystal grain of the correcting wafer;
grabbing a wafer center grain angular point image by using a micro optical head, storing the image to the local of an industrial personal computer, setting the image as a comparison template, then controlling the micro optical head to automatically grab the image of each grain angular point by using an upper PC, comparing the image with the template by using the alignment algorithm by using the upper PC, and calculating the x and y deviation of each angular point to obtain a correction table, and specifically:
taking the X-axis theoretical coordinates and Y-axis theoretical coordinates of the corner points of the crystal grains of the correction wafer as column coordinates and row coordinates of an X-axis deviation table and the X-axis coordinates and Y-axis coordinates of the crystal grains of the correction wafer, and obtaining differences between actual X-axis coordinates and theoretical X-axis coordinates of the corner points of the crystal grains of the correction wafer under a microscope lens, thereby obtaining an X-axis positioning correction matrix and a Y-axis positioning correction matrix-xDatagrid table of the correction wafer shown in fig. 3;
the Y-axis positioning correction matrix-yDataGrid table of the correction wafer shown in fig. 4 is obtained by taking the X-axis theoretical coordinates and Y-axis theoretical coordinates of the corner points of the die of the correction wafer as the column coordinates and row coordinates of the X-axis deviation table and the X-axis coordinates and Y-axis coordinates of the die of the correction wafer and the difference between the actual Y-axis coordinates and theoretical Y-axis coordinates of each corner point of the die of the correction wafer under the microscope.
In an embodiment, since the wafer die pattern is not a regular rectangle, the edge of the matrix cannot obtain a correction value (the value of 0 in the table), the correction range of the XY axis is also narrowed, the blank edge of the positioning correction matrix needs to be filled up, and a complete positioning correction matrix is obtained, and the step of obtaining the positioning correction matrix for the wafer for correction according to the calculated X-axis theoretical coordinate and Y-axis theoretical coordinate of the die angle of the obtained die and the X-axis coordinate and Y-axis coordinate of each corner of the wafer to be measured specifically includes the following steps:
according to the obtained X-axis theoretical coordinate and Y-axis theoretical coordinate of the corner point of the crystal grain of the wafer for correction and the obtained X-axis coordinate and Y-axis coordinate of the crystal grain of the wafer for correction, a difference matrix of the X-direction coordinate and a difference matrix of the Y-direction coordinate of the corner point of each crystal grain of the wafer to be tested are obtained, and the difference matrix is shown as an xDataGrey table and a yDataGrey table;
analyzing the obtained difference matrix of the X-direction coordinates and the obtained difference matrix of the Y-direction coordinates of each crystal grain of the wafer to be tested, and obtaining the crystal angle X-axis deviation of the crystal grain and the crystal angle X-axis deviation rule, wherein as shown in fig. 5 and 6, the X-axis deviation of the crystal grain is found to be linearly changed along with the axial stroke, the X-direction deviation is about 5um, and the Y-direction deviation is about 1um, so that Stage XY direction can be reduced by correcting the displacement deviation;
and filling the edge blank parts of the X-direction difference matrix and the Y-direction difference matrix by using a two-dimensional interpolation algorithm to obtain a complete positioning correction matrix of the wafer to be detected.
After obtaining a complete correction matrix, introducing the correction matrix into a precise motion platform controller, and performing axis shifting correction by the controller according to the wafer grain spacing and the correction matrix;
and grabbing the corner image of each crystal grain by using a microscopic optical head, and calculating XY deviation by using the upper computer PC, so that deviation data after 2D Mapping can be quickly obtained, X-direction deviation is obviously reduced, X-direction deviation is 1um after 2D Mapping, and Y-direction deviation is 0.5um after data analysis is performed, as shown in the following figures 7 and 8.
In a second aspect, referring to fig. 9, the present application further provides a wafer inspection positioning correction system, including:
the wafer detection device as shown in fig. 10 comprises a precision motion platform 5, a wafer carrying platform 4, a correction wafer 3 and a micro optical head 2, wherein the correction wafer 3 is adsorbed on the wafer carrying platform 4, and the wafer carrying platform is in driving connection with a rotating shaft of the precision motion platform;
a positioning correction matrix acquisition module 6, configured to acquire a positioning correction matrix of the wafer for correction by using the wafer inspection apparatus to acquire a die pattern of the wafer as a calibration board;
the shaft controller 7 is in communication connection with the positioning correction matrix acquisition module 6, the shaft controller 7 is connected with the rotating shaft of the precision motion platform 5, and the shaft controller 7 is used for controlling and driving the rotating shaft of the precision motion platform 5 to drive the wafer carrying platform 4 to carry out positioning compensation according to the acquired positioning correction matrix.
In an embodiment, the device further comprises an image acquisition module, wherein the image acquisition module is used for capturing a feature map of the wafer image to be detected when the micro optical head is positioned at a preset position, and is used for acquiring coordinate values of feature points according to the feature map.
In one embodiment, the image acquisition module is an image acquisition CCD1.
The wafer for correction can be a wafer product with qualified size and defect, and can also be a standard wafer, the standard wafer has high size precision, but the standard wafer has high price and limits export abroad, and the wafer detection, positioning and correction of the wafer detection equipment can be completed through the conventional qualified wafer product, so that the realization cost is low.
The application can also utilize the two-dimensional interferometer to measure the summarized deviation of the XY axis advancing process to obtain the compensation matrix, has the advantages of full-stroke compensation, has the defects of complex operation of the interferometer measuring process, higher requirements on measuring personnel and higher requirements on environment by the high-precision interferometer measuring process, realizes the wafer detection and positioning correction of the wafer detection equipment by taking the grain pattern of the wafer as a calibration plate for positioning correction, and has simple and convenient operation and high positioning correction precision.
Based on the same inventive concept, the embodiments of the present application also provide a computer-readable storage medium, on which a computer program is stored, which when being executed by a processor implements all or part of the method steps of the above method.
The present application may be implemented by implementing all or part of the above-described method flow, or by instructing the relevant hardware by a computer program, which may be stored in a computer readable storage medium, and which when executed by a processor, may implement the steps of the above-described method embodiments. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, executable files or in some intermediate form, etc. The computer readable medium may include: any entity or device capable of carrying computer program code, a recording medium, a U disk, a removable hard disk, a magnetic disk, an optical disk, a computer Memory, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), an electrical carrier signal, a telecommunications signal, a software distribution medium, and so forth. It should be noted that the content of the computer readable medium can be appropriately increased or decreased according to the requirements of the jurisdiction's jurisdiction and the patent practice, for example, in some jurisdictions, the computer readable medium does not include electrical carrier signals and telecommunication signals according to the jurisdiction and the patent practice.
Based on the same inventive concept, the embodiment of the application also provides an electronic device, which comprises a memory and a processor, wherein the memory stores a computer program running on the processor, and the processor executes the computer program to realize all or part of the method steps in the method.
The processor may be a central processing unit (Central Processing Unit, CPU), other general purpose processors, digital signal processors (Digital Signal Processor, DSP), application specific integrated circuits (Application Specific Integrated Circuit, ASIC), off-the-shelf programmable gate arrays (Field-Programmable Gate Array, FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, or the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like, the processor being a control center of the computer device, and the various interfaces and lines connecting the various parts of the overall computer device.
The memory may be used to store computer programs and/or modules, and the processor implements various functions of the computer device by running or executing the computer programs and/or modules stored in the memory, and invoking data stored in the memory. The memory may mainly include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required for at least one function (e.g., a sound playing function, an image playing function, etc.); the storage data area may store data (e.g., audio data, video data, etc.) created according to the use of the handset. In addition, the memory may include high-speed random access memory, and may also include non-volatile memory, such as a hard disk, memory, plug-in hard disk, smart Media Card (SMC), secure Digital (SD) Card, flash Card (Flash Card), at least one disk storage device, flash memory device, or other volatile solid-state storage device.
It will be appreciated by those skilled in the art that embodiments of the present application may be provided as a method, system, server, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, magnetic disk storage, optical storage, and the like) having computer-usable program code embodied therein.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), servers and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. The wafer detection positioning correction method is characterized by comprising the following steps of:
acquiring the circle center of the correction wafer adsorbed on the wafer carrier;
acquiring a crystal grain Map of the correction wafer according to the acquired circle center of the correction wafer and the crystal grain design size of the correction wafer;
axially aligning the correction wafer adsorbed on the wafer carrier with the precise motion platform to obtain a crystal grain pattern of the aligned correction wafer;
acquiring a positioning correction matrix of the correction wafer according to the acquired crystal grain Map of the correction wafer and the crystal grain pattern of the wafer after alignment;
and carrying out positioning correction on the wafer to be detected according to the acquired crystal grain spacing and the positioning correction matrix of the wafer for correction, and then carrying out wafer detection.
2. The method for aligning and correcting a wafer according to claim 1, wherein the step of obtaining the center of the wafer for correction attached to the wafer stage comprises the steps of:
selecting at least 3 point coordinates of the edge of the wafer for correction by using a high-power microscope;
and acquiring the center coordinates of the wafer to be tested according to at least 3 points of coordinates of the selected round edge of the wafer for correction.
3. The method for aligning and correcting a wafer inspection position according to claim 1, wherein the step of axially aligning the wafer for correction attached to the wafer stage with the precision motion stage to obtain the die pattern of the aligned wafer for correction comprises the steps of:
grabbing a first corner point of the wafer for correction in the X direction by using a micro optical head;
moving the Y axis to a second corner point in the X direction of the wafer for correction;
acquiring Y-direction angle deviation between the wafer to be measured and the precision motion platform according to the coordinates of the first corner point and the coordinates of the second corner point;
and controlling the precise motion platform rotating shaft to perform alignment compensation according to the obtained Y-direction angle deviation, and obtaining the crystal grain pattern of the aligned wafer for correction.
4. The method for detecting and positioning calibration of a wafer as set forth in claim 1, wherein the step of obtaining a positioning calibration matrix of the calibration wafer based on the obtained Map of the die of the calibration wafer and the die pattern of the wafer after alignment specifically comprises the steps of:
calculating and acquiring X-axis theoretical coordinates and Y-axis theoretical coordinates of grain corner points of the wafer for correction according to the circle center of the detected wafer and the grain design size;
grabbing an angular point image of each crystal grain of the correcting wafer by using a microscopic optical head, and calculating and acquiring an X-axis coordinate and a Y-axis coordinate of each angular point of each crystal grain of the correcting wafer;
and acquiring a positioning correction matrix of the correction wafer according to the acquired X-axis theoretical coordinate and Y-axis theoretical coordinate of the die corner point of the correction wafer and the acquired X-axis coordinate and Y-axis coordinate of the die of the correction wafer.
5. The method for positioning calibration of wafer inspection according to claim 4, wherein the step of obtaining the positioning calibration matrix of the calibration wafer according to the calculated X-axis theoretical coordinates, Y-axis theoretical coordinates of the crystal angle of the obtained crystal grain and the X-axis coordinates and Y-axis coordinates of each corner point of the wafer to be inspected comprises the steps of:
acquiring a difference matrix of X-axis coordinates and a difference matrix of Y-axis coordinates of the corner points of each crystal grain of the wafer to be tested according to the acquired X-axis theoretical coordinates and Y-axis theoretical coordinates of the corner points of the crystal grain of the wafer for correction and the acquired X-axis coordinates and Y-axis coordinates of the crystal grain of the wafer for correction;
and according to the obtained difference matrix of the X-direction coordinates and the obtained difference matrix of the Y-direction coordinates of each crystal grain of the wafer to be tested, filling the edge blank parts of the X-direction difference matrix and the Y-direction difference matrix by utilizing a two-dimensional interpolation algorithm, and obtaining the complete positioning correction matrix of the wafer to be tested.
6. The method of claim 1, wherein the calibration wafer is a standard wafer or a qualified wafer.
7. The method of claim 1, wherein the axial alignment is an X-axis alignment or a Y-axis alignment.
8. A wafer inspection positioning correction system, comprising:
the wafer detection equipment comprises a precise motion platform, a wafer carrying platform, a correcting wafer and a microscopic optical head, wherein the correcting wafer is adsorbed on the wafer carrying platform, and the wafer carrying platform is in driving connection with a rotating shaft of the precise motion platform;
the positioning correction matrix acquisition module is used for acquiring a crystal grain pattern of a wafer by using wafer detection equipment as a calibration plate to acquire a positioning correction matrix of the wafer for correction;
the shaft controller is in communication connection with the positioning correction matrix acquisition module, and is connected with the rotating shaft of the precision motion platform, and the shaft controller is used for controlling and driving the rotating shaft of the precision motion platform to drive the wafer carrying platform to carry out positioning compensation according to the acquired positioning correction matrix.
9. The wafer inspection positioning correction system of claim 8 further comprising an image acquisition module for capturing a signature of an image of a wafer to be inspected when the micro-optical head is positioned at a predetermined location.
10. The wafer inspection positioning correction system of claim 9 wherein the image acquisition module is an image acquisition CCD.
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