JP2002016068A5 - - Google Patents
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- JP2002016068A5 JP2002016068A5 JP2000195007A JP2000195007A JP2002016068A5 JP 2002016068 A5 JP2002016068 A5 JP 2002016068A5 JP 2000195007 A JP2000195007 A JP 2000195007A JP 2000195007 A JP2000195007 A JP 2000195007A JP 2002016068 A5 JP2002016068 A5 JP 2002016068A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- element belonging
- group
- aluminum
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052782 aluminium Inorganic materials 0.000 claims 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 6
- 229910045601 alloy Inorganic materials 0.000 claims 4
- 239000000956 alloy Substances 0.000 claims 4
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 4
- 229910052758 niobium Inorganic materials 0.000 claims 4
- 238000000059 patterning Methods 0.000 claims 4
- 229910052719 titanium Inorganic materials 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 claims 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 238000009751 slip forming Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Claims (19)
該第１膜上にIVA族、VA族又はVIA族に属する元素を含むと共に前記第１膜に比べて膜厚が薄く且つ前記第１膜上で平面的に見て部分的に相互に連結されているか或いは点在する多数の島状部分からなる不完全な第２膜を形成する第２工程と、
前記第２膜上からのアルミニウム用のエッチングにより前記第２膜及び前記第１膜を一括してパターニングする第３工程と
を含むことを特徴とする配線の製造方法。A first step of forming a first film containing aluminum as a main component;
The first film includes an element belonging to the group IVA, VA, or VIA and is thinner than the first film, and is partially interconnected in plan view on the first film. A second step of forming an incomplete second film composed of a large number of islands that are present or interspersed;
A third step of collectively patterning said second film and said first film by etching for aluminum from above said second film.
該第１膜上にIVA族、VA族又はVIA族に属する元素を含むと共に前記第１膜に比べて膜厚が薄く且つ前記第１膜上で平面的に見て前記第１膜を覆う完全な第２膜を形成する第２工程と、
前記第２膜上からのアルミニウム用のエッチングにより前記第２膜及び前記第１膜を一括してパターニングする第３工程と
を含むことを特徴とする配線の製造方法。A first step of forming a first film containing aluminum as a main component;
The first film includes an element belonging to the group IVA, VA, or VIA on the first film, is thinner than the first film, and completely covers the first film when viewed in plan on the first film. A second step of forming a simple second film;
A third step of collectively patterning said second film and said first film by etching for aluminum from above said second film.
該第１膜上に配置されており、IVA族、VA族又はVIA族に属する元素を含むと共に前記第１膜に比べて膜厚が薄く且つ前記第１膜上で平面的に見て部分的に相互に連結されているか或いは点在する多数の島状部分からなる不完全な第２膜と
を備えたことを特徴とする配線。A first film mainly composed of aluminum;
The first film is disposed on the first film, contains an element belonging to the group IVA, VA, or VIA, is thinner than the first film, and is partially planar when viewed on the first film. And an incomplete second film composed of a number of island-shaped portions interconnected or interspersed with each other.
該第１膜上に配置されており、IVA族、VA族又はVIA族に属する元素を含むと共に前記第１膜に比べて膜厚が薄く且つ前記第１膜上で平面的に見て前記第１膜を覆う完全な第２膜と
を備えたことを特徴とする配線。A first film mainly composed of aluminum;
The first film is disposed on the first film, includes an element belonging to the group IVA, VA, or VIA, has a smaller thickness than the first film, and has a thickness in plan view on the first film. A complete second film covering the first film.
該第１膜上にIVA族、VA族又はVIA族に属する元素を含むと共に前記第１膜に比べて膜厚が薄く且つ前記第１膜上で平面的に見て部分的に相互に連結されているか或いは点在する多数の島状部分からなる第２膜を形成する第２工程と、
前記第２膜上からのアルミニウム用のエッチングにより前記第２膜及び前記第１膜を一括してパターニングする第３工程と
を含むことを特徴とする配線の製造方法。A first step of forming a first film containing aluminum as a main component;
The first film includes an element belonging to the group IVA, VA, or VIA and is thinner than the first film, and is partially interconnected in plan view on the first film. A second step of forming a second film made up of a number of island-shaped portions that are
A third step of collectively patterning said second film and said first film by etching for aluminum from above said second film.
該第１膜上にIVA族、VA族又はVIA族に属する元素を含むと共に前記第１膜に比べて膜厚が薄く且つ前記第１膜上で平面的に見て部分的に相互に連結されているか或いは点在する多数の島状部分からなる第２膜を形成する第２工程と、
前記第２膜上からのアルミニウム用のエッチングにより前記第２膜及び前記第１膜を一括してパターニングする第３工程と
を含むことを特徴とする配線。A first step of forming a first film containing aluminum as a main component;
The first film includes an element belonging to the group IVA, VA, or VIA and is thinner than the first film, and is partially interconnected in plan view on the first film. A second step of forming a second film made up of a number of island-shaped portions that are
A third step of collectively patterning the second film and the first film by etching for aluminum from above the second film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000195007A JP4099933B2 (en) | 2000-06-28 | 2000-06-28 | Wiring manufacturing method, wiring, and electro-optical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000195007A JP4099933B2 (en) | 2000-06-28 | 2000-06-28 | Wiring manufacturing method, wiring, and electro-optical device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002016068A JP2002016068A (en) | 2002-01-18 |
| JP2002016068A5 true JP2002016068A5 (en) | 2004-12-16 |
| JP4099933B2 JP4099933B2 (en) | 2008-06-11 |
Family
ID=18693750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000195007A Expired - Fee Related JP4099933B2 (en) | 2000-06-28 | 2000-06-28 | Wiring manufacturing method, wiring, and electro-optical device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4099933B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4781066B2 (en) * | 2004-09-30 | 2011-09-28 | 株式会社半導体エネルギー研究所 | Method for manufacturing display device |
| JP4754798B2 (en) * | 2004-09-30 | 2011-08-24 | 株式会社半導体エネルギー研究所 | Method for manufacturing display device |
-
2000
- 2000-06-28 JP JP2000195007A patent/JP4099933B2/en not_active Expired - Fee Related
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