JP2001500658A5 - - Google Patents

Download PDF

Info

Publication number
JP2001500658A5
JP2001500658A5 JP1998512612A JP51261298A JP2001500658A5 JP 2001500658 A5 JP2001500658 A5 JP 2001500658A5 JP 1998512612 A JP1998512612 A JP 1998512612A JP 51261298 A JP51261298 A JP 51261298A JP 2001500658 A5 JP2001500658 A5 JP 2001500658A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998512612A
Other languages
English (en)
Other versions
JP2001500658A (ja
JP3979673B2 (ja
Filing date
Publication date
Priority claimed from PCT/US1996/014349 external-priority patent/WO1998010471A1/en
Application filed filed Critical
Publication of JP2001500658A publication Critical patent/JP2001500658A/ja
Publication of JP2001500658A5 publication Critical patent/JP2001500658A5/ja
Application granted granted Critical
Publication of JP3979673B2 publication Critical patent/JP3979673B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

Figure 2001500658
Figure 2001500658
Figure 2001500658
Figure 2001500658
Figure 2001500658
Figure 2001500658
JP51261298A 1996-09-05 1997-03-10 浮遊ゲートメモリデバイスにおけるプリプログラミングのためのファウラ・ノルトハイム（ｆ―ｎ）トンネリング Expired - Lifetime JP3979673B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
WO96/14349 1996-09-05
PCT/US1996/014349 WO1998010471A1 (en) 1996-09-05 1996-09-05 Triple well floating gate memory and operating method with isolated channel program, preprogram and erase processes
PCT/US1997/003861 WO1998010424A1 (en) 1996-09-05 1997-03-10 Fowler-nordheim (f-n) tunneling for pre-programming in a floating gate memory device

Publications (3)

Publication Number Publication Date
JP2001500658A JP2001500658A (ja) 2001-01-16
JP2001500658A5 true JP2001500658A5 (ja) 2004-12-09
JP3979673B2 JP3979673B2 (ja) 2007-09-19

Family

ID=22255744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51261298A Expired - Lifetime JP3979673B2 (ja) 1996-09-05 1997-03-10 浮遊ゲートメモリデバイスにおけるプリプログラミングのためのファウラ・ノルトハイム（ｆ―ｎ）トンネリング

Country Status (4)

Country Link
US (1) US5963476A (ja)
EP (2) EP0925586B1 (ja)
JP (1) JP3979673B2 (ja)
WO (2) WO1998010471A1 (ja)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6188604B1 (en) * 1998-03-02 2001-02-13 Amic Technology, Inc. Flash memory cell & array with improved pre-program and erase characteristics
DE69834120T2 (de) * 1998-06-04 2006-10-12 Macronix International Co. Ltd., Hsinchu Blockdekodierter wortleitungstreiber mit positiver und negativer spannungsbetriebsart unter verwendung von mos-transistoren mit vier anschlüssen
JP3999900B2 (ja) * 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
US6091657A (en) * 1999-01-20 2000-07-18 Lucent Technologies Inc. Integrated circuit having protection of low voltage devices
US6091635A (en) * 1999-03-24 2000-07-18 Worldwide Semiconductor Manufacturing Corporation Electron injection method for substrate-hot-electron program and erase VT tightening for ETOX cell
US6188609B1 (en) * 1999-05-06 2001-02-13 Advanced Micro Devices, Inc. Ramped or stepped gate channel erase for flash memory application
EP1067557B1 (en) 1999-06-22 2005-02-02 STMicroelectronics S.r.l. Flash compatible EEPROM
US6327183B1 (en) 2000-01-10 2001-12-04 Advanced Micro Devices, Inc. Nonlinear stepped programming voltage
US6222771B1 (en) * 2000-01-31 2001-04-24 Eon Silicon Devices, Inc. Unified program method and circuitry in flash EEPROM
US6269025B1 (en) 2000-02-09 2001-07-31 Advanced Micro Devices, Inc. Memory system having a program and erase voltage modifier
US6246610B1 (en) 2000-02-22 2001-06-12 Advanced Micro Devices, Inc. Symmetrical program and erase scheme to improve erase time degradation in NAND devices
US6295228B1 (en) 2000-02-28 2001-09-25 Advanced Micro Devices, Inc. System for programming memory cells
US6304487B1 (en) 2000-02-28 2001-10-16 Advanced Micro Devices, Inc. Register driven means to control programming voltages
US6246611B1 (en) * 2000-02-28 2001-06-12 Advanced Micro Devices, Inc. System for erasing a memory cell
US6556477B2 (en) 2001-05-21 2003-04-29 Ibm Corporation Integrated chip having SRAM, DRAM and flash memory and method for fabricating the same
US6670234B2 (en) 2001-06-22 2003-12-30 International Business Machines Corporation Method of integrating volatile and non-volatile memory cells on the same substrate and a semiconductor memory device thereof
US6784480B2 (en) * 2002-02-12 2004-08-31 Micron Technology, Inc. Asymmetric band-gap engineered nonvolatile memory device
US6906376B1 (en) * 2002-06-13 2005-06-14 A Plus Flash Technology, Inc. EEPROM cell structure and array architecture
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6865407B2 (en) * 2002-07-11 2005-03-08 Optical Sensors, Inc. Calibration technique for non-invasive medical devices
US6917078B2 (en) * 2002-08-30 2005-07-12 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US6888200B2 (en) * 2002-08-30 2005-05-03 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US6903969B2 (en) * 2002-08-30 2005-06-07 Micron Technology Inc. One-device non-volatile random access memory cell
US6771541B1 (en) * 2003-02-25 2004-08-03 Nexflash Technologies, Inc. Method and apparatus for providing row redundancy in nonvolatile semiconductor memory
US8125003B2 (en) * 2003-07-02 2012-02-28 Micron Technology, Inc. High-performance one-transistor memory cell
EP1656677A1 (en) * 2003-08-13 2006-05-17 Koninklijke Philips Electronics N.V. Improved erase and read schemes for charge trapping non-volatile memories
KR100558004B1 (ko) * 2003-10-22 2006-03-06 삼성전자주식회사 게이트 전극과 반도체 기판 사이에 전하저장층을 갖는비휘발성 메모리 소자의 프로그램 방법
US7075828B2 (en) * 2004-04-26 2006-07-11 Macronix International Co., Intl. Operation scheme with charge balancing erase for charge trapping non-volatile memory
CN100463138C (zh) * 2004-04-26 2009-02-18 旺宏电子股份有限公司 电荷陷入非易失性存储器的电荷平衡操作方法
US7133313B2 (en) * 2004-04-26 2006-11-07 Macronix International Co., Ltd. Operation scheme with charge balancing for charge trapping non-volatile memory
KR100591254B1 (ko) * 2004-04-29 2006-06-19 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
US7145186B2 (en) 2004-08-24 2006-12-05 Micron Technology, Inc. Memory cell with trenched gated thyristor
US7224619B2 (en) * 2005-09-09 2007-05-29 Macronix International Co., Ltd. Method and apparatus for protection from over-erasing nonvolatile memory cells
US20080117691A1 (en) * 2006-11-17 2008-05-22 Sharp Kabushiki Kaisha Erasing circuit of nonvolatile semiconductor memory device
US7746706B2 (en) 2006-12-15 2010-06-29 Spansion Llc Methods and systems for memory devices
US8320191B2 (en) * 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7940572B2 (en) * 2008-01-07 2011-05-10 Mosaid Technologies Incorporated NAND flash memory having multiple cell substrates
US8984238B2 (en) * 2009-02-05 2015-03-17 Spansion Llc Fractured erase system and method
DE102009014371A1 (de) 2009-03-21 2010-09-30 Emico Gmbh Beheizbarer Vorfilter für Abgasreinigungsanlagen bei Dieselmotoren
JP2012533140A (ja) * 2009-07-10 2012-12-20 アプルス フラッシュ テクノロジー アイエヌシー 新たな高速高密度ｎａｎｄベース２ｔ−ｎｏｒフラッシュメモリ設計
TWI755874B (zh) * 2019-09-30 2022-02-21 台灣積體電路製造股份有限公司 半導體裝置及其形成方法
FR3113976B1 (fr) * 2020-09-07 2023-07-28 St Microelectronics Rousset Mémoire type mémoire morte électriquement programmable et effaçable
KR20230010771A (ko) 2020-12-04 2023-01-19 양쯔 메모리 테크놀로지스 씨오., 엘티디. 3차원 nand 플래시 메모리의 소거 및 리셋 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US243559A (en) * 1881-06-28 Thomas hipwell
US5132935A (en) * 1990-04-16 1992-07-21 Ashmore Jr Benjamin H Erasure of eeprom memory arrays to prevent over-erased cells
US5122985A (en) * 1990-04-16 1992-06-16 Giovani Santin Circuit and method for erasing eeprom memory arrays to prevent over-erased cells
JP3068291B2 (ja) * 1990-12-12 2000-07-24 新日本製鐵株式会社 半導体記憶装置
DE69232807T2 (de) * 1991-12-09 2003-02-20 Fujitsu Ltd., Kawasaki Flash-Speicher mit besserer Löschbarkeit und dessen Schaltung
DE4311358C2 (de) * 1992-04-07 1999-07-22 Mitsubishi Electric Corp Nicht-flüchtige Halbleiterspeichereinrichtung und Betriebsverfahren für eine nicht-flüchtige Halbleiterspeichereinrichtung und Verfahren zum Programmieren von Information in eine nicht-flüchtige Halbleiterspeichereinrichtung
US5341342A (en) * 1992-12-18 1994-08-23 National Semiconductor Corporation Flash memory cell structure
US5487033A (en) * 1994-06-28 1996-01-23 Intel Corporation Structure and method for low current programming of flash EEPROMS
EP0690452A3 (en) * 1994-06-28 1999-01-07 Advanced Micro Devices, Inc. Electrically erasable memory and method of erasure
US5699298A (en) * 1996-05-22 1997-12-16 Macronix International Co., Ltd. Flash memory erase with controlled band-to-band tunneling current
US5790456A (en) * 1997-05-09 1998-08-04 Advanced Micro Devices, Inc. Multiple bits-per-cell flash EEPROM memory cells with wide program and erase Vt window

Similar Documents

Publication Publication Date Title
JP2000502280A5 (ja)
JP2000501771A5 (ja)
JP2001500744A5 (ja)
JP2000515319A5 (ja)
JP2000500076A5 (ja)
JP2001505363A5 (ja)
JP2000511106A5 (ja)
JP2000500055A5 (ja)
JP2000502472A5 (ja)
JP2000501825A5 (ja)
JP2000500874A5 (ja)
JP2001524277A5 (ja)
JP2000502485A5 (ja)
JP2000502425A5 (ja)
JP2000501774A5 (ja)
JP2001500658A5 (ja)
JP2000502570A5 (ja)
JP2000502568A5 (ja)
JP2000501876A5 (ja)
JP2000501744A5 (ja)
JP2000502316A5 (ja)
JP2000502714A5 (ja)
JP2000500318A5 (ja)
JP2000502479A5 (ja)
JP2000500184A5 (ja)