JP2001351961A - Si WAFER CONVEYING JIG AND ITS MANUFACTURING METHOD - Google Patents
Si WAFER CONVEYING JIG AND ITS MANUFACTURING METHODInfo
- Publication number
- JP2001351961A JP2001351961A JP2000169888A JP2000169888A JP2001351961A JP 2001351961 A JP2001351961 A JP 2001351961A JP 2000169888 A JP2000169888 A JP 2000169888A JP 2000169888 A JP2000169888 A JP 2000169888A JP 2001351961 A JP2001351961 A JP 2001351961A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- layer
- preform
- jig
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5093—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with elements other than metals or carbon
- C04B41/5096—Silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、搬送治具及びその
製造方法に関し、特にウェハを保持して搬送する搬送治
具及びその製造方法に関する。The present invention relates to a transfer jig and a method for manufacturing the same, and more particularly, to a transfer jig for holding and transferring a wafer and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】技術革新が進む中で、半導体、液晶素子
などを製造する分野においては、その製造装置用部材と
して、高強度、高剛性、耐衝撃性、耐食性、高純度等の
特性を有する材料が要求されている。特に最近では、こ
れら特性の他に、ウェハを搬送する搬送治具などの部材
に求められる特性の一つである、平滑で清浄な平面を有
する材料が強く要求されている。2. Description of the Related Art In the field of manufacturing semiconductors, liquid crystal elements, etc., as technological innovation progresses, members for manufacturing equipment have characteristics such as high strength, high rigidity, impact resistance, corrosion resistance, and high purity. Materials are required. In particular, recently, in addition to these properties, a material having a smooth and clean flat surface, which is one of the properties required for a member such as a transfer jig for transferring a wafer, is strongly demanded.
【０００３】このような材料としては、Ａｌ2Ｏ3、Ｓｉ
3Ｎ4、ＳｉＣ等のセラミックスが用いられている。しか
し、これらセラミックスでは、材料自体が有するポアの
ため、平滑な表面が得にくいという問題があった。それ
に加えて、セラミックス自体が硬いために搬送する際に
セラミックスがウェハを引っかけてウェハを傷つけてし
まうという問題もあった。そして、この引っかけられた
ことによりＳｉがパーティクルとして発生し、そのパー
ティクルが製造工程でのＳｉ素子の不良発生の原因とも
なっていた。[0003] Such materials include Al 2 O 3 and Si.
3 N 4, ceramics such as SiC is used. However, these ceramics have a problem that it is difficult to obtain a smooth surface due to the pores of the material itself. In addition, there is also a problem that the ceramics are hard and the ceramics catch the wafers when transporting them and damage the wafers. Then, Si is generated as particles due to the hooking, and the particles cause a defect of the Si element in the manufacturing process.
【０００４】そのため、最近では、セラミックスよりは
るかに軟質なＡｌやＳｉ等の金属をマトリックスとする
金属−セラミックス複合材料が用いられてきている。中
でもＳｉＣ粉末を強化材とし、Ｓｉをマトリックスとし
た複合材料は、軽量で高剛性である上に、マトリックス
が融点の高い金属であるため、耐熱性にも優れ、その用
途は今後更に広がると予想されている。[0004] Therefore, recently, a metal-ceramic composite material having a matrix of a metal such as Al or Si much softer than ceramics has been used. Among them, composite materials using SiC powder as a reinforcing material and Si as a matrix are lightweight and highly rigid, and since the matrix is a metal with a high melting point, it has excellent heat resistance and its use is expected to expand in the future. Have been.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、このＳ
ｉをマトリックスとする複合材料でも、その表面を加工
した場合、強化材であるＳｉＣ粉末がマトリックスであ
るＳｉから脱落すること、また、強化材とマトリックス
との加工速度が大きく違うため凸凹が生じることなどに
より、搬送治具の表面を十分に満足できるほど平滑な状
態にすることが難しいという問題があった。However, this S
When the surface of a composite material using i as a matrix is processed, the SiC powder as the reinforcing material falls off from the Si as the matrix, and unevenness occurs because the processing speed between the reinforcing material and the matrix is significantly different. For example, there is a problem that it is difficult to make the surface of the transfer jig smooth enough to be sufficiently satisfactory.
【０００６】本発明は、上述した複合材料からなる搬送
治具が有する課題に鑑みなされたものであって、その目
的は、十分に満足できるほどの優れた平滑な表面を有す
る搬送治具を提供し、その製造方法をも提供することに
ある。SUMMARY OF THE INVENTION The present invention has been made in view of the problems of the above-described transfer jig made of a composite material, and has as its object to provide a transfer jig having a sufficiently smooth surface that is sufficiently satisfactory. Another object of the present invention is to provide a manufacturing method thereof.
【０００７】[0007]
【課題を解決するための手段】本発明者等は、上記目的
を達成するため鋭意研究した結果、表面をＳｉで被覆し
た複合材料を搬送治具の材料として用いれば、優れた平
滑な表面を有する搬送治具が得られるとの知見を得て本
発明を完成するに至った。Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above object. As a result, if a composite material whose surface is coated with Si is used as a material for a transfer jig, an excellent smooth surface can be obtained. The present invention was completed by obtaining the knowledge that a transfer jig having the same can be obtained.
【０００８】即ち本発明は、（１）Ｓｉウェハを搬送す
る搬送治具であって、その治具が、Ｓｉウェハの接触部
分を含む表面の一部または全部が表面を研磨されたＳｉ
層で被覆されているＳｉとＳｉＣ粉末との複合材料から
なることを特徴とするＳｉウェハ搬送治具（請求項１）
とし、（２）前記複合材料中のＳｉＣ粉末の含有率が、
５０体積％以上であることを特徴とする請求項１記載の
Ｓｉウェハ搬送治具（請求項２）とし、（３）前記Ｓｉ
層の研磨された表面の表面粗さが、Ｒｍａｘで０．５μ
ｍ以下で、かつ平坦度が、５μｍ以下であることを特徴
とする請求項１または２記載のＳｉウェハ搬送治具。
（請求項３）とし、（４）強化材であるＳｉＣ粉末に有
機バインダーを添加して混合し、その混合粉末でプリフ
ォームを形成し、そのプリフォームに１５００〜１７０
０℃の温度で溶融したＳｉを真空中またはアルゴン雰囲
気中で浸透させると同時に、プリフォームの表面の一部
または全部にＳｉ層を形成し、そのＳｉ層の表面を研磨
加工することを特徴とするＳｉウェハ搬送治具の製造方
法（請求項４）とし、（５）前記プリフォーム中のＳｉ
Ｃ粉末の充填率が、５０体積％以上であることを特徴と
する請求項４記載のＳｉウェハ搬送治具の製造方法（請
求項５）とし、（６）前記Ｓｉ層の研磨された表面の表
面粗さが、Ｒｍａｘで０．５μｍ以下で、かつ平坦度
が、５μｍ以下であることを特徴とする請求項４または
５記載のＳｉウェハ搬送治具の製造方法（請求項６）と
することを要旨とする。以下さらに詳細に説明する。That is, the present invention provides (1) a transfer jig for transferring a Si wafer, wherein the jig has a part or the whole of a surface including a contact part of the Si wafer whose surface is polished.
A jig for transferring a Si wafer, comprising a composite material of Si and SiC powder coated with a layer.
(2) the content of the SiC powder in the composite material is:
The Si wafer transfer jig (Claim 2) according to claim 1, wherein said Si wafer is at least 50% by volume.
The surface roughness of the polished surface of the layer is 0.5 μm in Rmax
The Si wafer transfer jig according to claim 1 or 2, wherein the flatness is not more than 5 m.
(4) An organic binder is added to and mixed with the SiC powder as a reinforcing material, and a preform is formed from the mixed powder.
Simultaneously infiltrating Si melted at a temperature of 0 ° C. in a vacuum or an argon atmosphere, forming a Si layer on a part or the entire surface of the preform, and polishing the surface of the Si layer. (5) A method of manufacturing a Si wafer transfer jig to be performed,
The method according to claim 4, wherein a filling rate of the C powder is 50% by volume or more (claim 5). (6) The method for manufacturing a polished surface of the Si layer. 6. The method according to claim 4, wherein the surface roughness is 0.5 μm or less in Rmax and the flatness is 5 μm or less. Is the gist. This will be described in more detail below.
【０００９】上記で述べたように、本発明のＳｉウェハ
を搬送する搬送治具としては、Ｓｉウェハの接触部分を
含む表面の一部または全部が表面を研磨されたＳｉ層で
被覆されているＳｉとＳｉＣ粉末との複合材料からなる
搬送治具とした（請求項１）。As described above, in the transfer jig for transferring the Si wafer of the present invention, a part or all of the surface including the contact portion of the Si wafer is covered with the polished Si layer. A transport jig made of a composite material of Si and SiC powder is provided (claim 1).
【００１０】上記のように本発明の搬送治具を、表面の
一部または全部が表面を研磨されたＳｉ層で被覆されて
いる複合材料としたので、表面からＳｉＣ粉末が脱落し
ない、また、加工速度が違うことによって凹凸が生じる
ことのない極めて平滑な面を有する搬送治具となり、ま
た、Ｓｉウェハを他物質で汚染させることのない優れた
搬送治具ともなる。[0010] As described above, the transfer jig of the present invention is a composite material in which a part or all of the surface is covered with a polished Si layer, so that the SiC powder does not fall off the surface. A transfer jig having an extremely smooth surface without unevenness due to different processing speeds, and also an excellent transfer jig that does not contaminate the Si wafer with other substances.
【００１１】その搬送治具の基材である複合材料中のＳ
ｉＣ粉末の含有率としては、５０体積％以上とした（請
求項２）。ＳｉＣ粉末の含有率が５０体積％より低い
と、複合材料の強度、剛性が低下し、構造部材である搬
送治具としての必要な強度、剛性が得られない。[0011] S in the composite material that is the base material of the transfer jig
The content of the iC powder was 50% by volume or more (Claim 2). If the content of the SiC powder is lower than 50% by volume, the strength and rigidity of the composite material decrease, and the strength and rigidity required as a transport jig as a structural member cannot be obtained.
【００１２】また、その搬送治具表面に形成されている
Ｓｉ層の表面粗さとしては、Ｒｍａｘで０．５μｍ以
下、平坦度としては、５μｍ以下とした（請求項３）。
表面粗さがＲｍａｘで０．５μｍより粗く、平坦度が５
μｍより大きいと、Ｓｉウェハ搬送の際、ウェハ表面に
傷などの損傷を与える恐れがある。The surface roughness of the Si layer formed on the surface of the transfer jig is 0.5 μm or less in Rmax and 5 μm or less in flatness.
Surface roughness is less than 0.5 μm in Rmax and flatness is 5
If it is larger than μm, there is a possibility that the wafer surface may be damaged such as a scratch when transporting the Si wafer.
【００１３】その搬送治具の製造方法としては、強化材
であるＳｉＣ粉末に有機バインダーを添加して混合し、
その混合粉末でプリフォームを形成し、そのプリフォー
ムに１５００〜１７００℃の温度で溶融したＳｉを真空
中またはアルゴン雰囲気中で浸透させると同時に、プリ
フォームの表面の一部または全部にＳｉ層を形成し、そ
のＳｉ層の表面を研磨加工する製造方法とした（請求項
４）。As a method of manufacturing the transfer jig, an organic binder is added to SiC powder as a reinforcing material and mixed.
A preform is formed from the mixed powder, and the molten Si is infiltrated into the preform at a temperature of 1500 to 1700 ° C. in a vacuum or an argon atmosphere, and at the same time, a Si layer is formed on a part or the entire surface of the preform. Then, the surface of the Si layer is polished.
【００１４】上記のように基材である複合材料をＳｉＣ
粉末で形成したプリフォームに溶融したＳｉを浸透させ
て作製するため、ＳｉＣ粉末の高い含有率を有する複合
材料を作製することができ、同時にその表面に金属のＳ
ｉ層を被覆することができるので、表面からＳｉＣ粉末
が脱落しない、また、加工速度が違うことによって凹凸
が生じることのない極めて平滑な面を有する搬送治具と
することができる。As described above, the composite material as the base material is made of SiC.
Since the preform is formed by infiltrating molten Si into a preform formed of a powder, a composite material having a high content of SiC powder can be prepared, and at the same time, metal S
Since the i-layer can be covered, a transport jig having an extremely smooth surface without SiC powder falling off from the surface and having no unevenness due to a difference in processing speed can be obtained.
【００１５】そのＳｉを浸透させる温度を１５００〜１
７００℃としたのは、１５００℃より低いと、Ｓｉ層の
形成が遅いばかりでなく、緻密な複合材料が得られず、
１７００℃より高いと、Ｓｉの蒸発が激しくなり、Ｓｉ
層がポーラスになるだけでなく、緻密な複合材料を得る
ことが難しくなる。The temperature at which the Si is infiltrated is from 1500 to 1
The reason why the temperature is set to 700 ° C. is that if the temperature is lower than 1500 ° C., not only the formation of the Si layer is slow, but also a dense composite material cannot be obtained.
If the temperature is higher than 1700 ° C., evaporation of Si becomes severe, and Si
Not only is the layer porous, but it becomes difficult to obtain a dense composite material.
【００１６】そのプリフォーム中のＳｉＣ粉末の充填率
としては、５０体積％以上とし（請求項５）、成した複
合材料のＳｉ層の表面粗さとしては、Ｒｍａｘで０．５
μｍ以下、平坦度としては５μｍ以下とした（請求項
６）。５０体積％以上の充填率を有するプリフォームに
溶融したＳｉを浸透させれば、複合材料中のＳｉＣ粉末
の含有率を請求項２に示す含有率とすることができ、成
した複合材料の表面のＳｉ層を研磨すれば、請求項３に
示す表面粗さと平坦度とすることができる。The filling rate of the SiC powder in the preform is 50% by volume or more (Claim 5), and the surface roughness of the Si layer of the formed composite material is 0.5% in Rmax.
μm or less, and the flatness was 5 μm or less. If the molten Si is infiltrated into a preform having a filling rate of 50% by volume or more, the content of the SiC powder in the composite material can be set to the content shown in claim 2, and the surface of the formed composite material The surface roughness and flatness described in claim 3 can be obtained by polishing the Si layer.
【００１７】[0017]
【発明の実施の形態】本発明の製造方法をさらに詳しく
述べると、先ずＳｉＣ粉末を用意し、これにフェノール
等の有機バインダーを添加して混合し、プレスなどによ
り成形した後、所定の温度で脱バインダーしてＳｉＣ粉
末の充填率が５０体積％以上のプリフォームを形成す
る。得られたプリフォームを例えば図１に示す搬送治具
の形状にするため、機械加工しても差し支えなく、これ
も本発明に包含される。BEST MODE FOR CARRYING OUT THE INVENTION The production method of the present invention will be described in more detail. First, an SiC powder is prepared, an organic binder such as phenol is added thereto, mixed, and molded by pressing or the like. By debinding, a preform having a filling rate of SiC powder of 50% by volume or more is formed. In order to make the obtained preform into the shape of the conveying jig shown in FIG. 1, for example, machining may be performed, and this is also included in the present invention.
【００１８】得られたプリフォームの上面にＳｉインゴ
ットを載せ、これを真空中またはアルゴン雰囲気中で１
５００〜１７００℃の温度で加熱処理して所定時間保持
し、溶融されたＳｉをプリフォーム中に浸透させると同
時にプリフォームの上面にＳｉ層を形成し、冷却して複
合材料を作製する。Ｓｉ層を形成する広さ及びその厚さ
については、Ｓｉの浸透時間を制御すれば、所要の広さ
及び厚さにすることができる。A Si ingot was placed on the upper surface of the obtained preform, and this was placed in a vacuum or argon atmosphere.
A heat treatment is performed at a temperature of 500 to 1700 ° C., and a predetermined time is maintained. The molten Si penetrates into the preform, and at the same time, an Si layer is formed on the upper surface of the preform and cooled to produce a composite material. The width and thickness of the Si layer can be controlled to the required width and thickness by controlling the permeation time of Si.
【００１９】得られた複合材料を搬送治具の形状に機械
加工する。次いで、ウェハを吸着保持するための例えば
図１に示す真空吸引穴を機械加工で設け、併せて形成さ
れたＳｉ層の表面を表面粗さがＲｍａｘで０．５μｍ以
下、平坦度が５μｍ以下となるよう研磨加工して搬送治
具を作製する。The obtained composite material is machined into the shape of a transfer jig. Next, for example, a vacuum suction hole shown in FIG. 1 for sucking and holding the wafer is provided by machining, and the surface of the formed Si layer is formed to have a surface roughness Rmax of 0.5 μm or less and a flatness of 5 μm or less. The transfer jig is manufactured by polishing so as to be as possible.
【００２０】以上の方法で搬送治具を作製すれば、優れ
た平滑な表面を有する搬送治具を得ることができるよう
になるWhen a transport jig is manufactured by the above method, a transport jig having an excellent smooth surface can be obtained.
【００２１】（実施例１） （１）搬送治具の作製 市販のＳｉＣ粉末（信濃電気精錬社製、ＧＣ＃８００）
１００重量部に、有機バインダーとしてフェノール樹脂
（昭和高分子社製、ＢＲＬ−１５８３）を１０重量部加
えて混合し、これを金型でプレスした後、さらにこれを
２００℃で脱バインダーして充填率が５５体積％で、形
状が３００×２００×ｔ１０ｍｍのプリフォームを形成
した。(Example 1) (1) Preparation of transport jig Commercially available SiC powder (GC # 800, manufactured by Shinano Electric Refining Co., Ltd.)
To 100 parts by weight, 10 parts by weight of a phenol resin (manufactured by Showa Polymer Co., Ltd., BRL-1583) was added and mixed as an organic binder, and the mixture was pressed with a mold. A preform having a rate of 55% by volume and a shape of 300 × 200 × t10 mm was formed.
【００２２】得られたプリフォームの上面にＳｉインゴ
ット（日本電工社製）を載せ、これを真空中で表１に示
す温度で３時間保持することにより、溶融したＳｉをプ
リフォーム中に浸透させると同時に、プリフォームの上
面一部にＳｉ層を形成した後、それを冷却して表面にＳ
ｉ層を有する複合材料を作製した。A Si ingot (manufactured by Nippon Denko KK) is placed on the upper surface of the obtained preform, and the Si ingot is held in a vacuum at a temperature shown in Table 1 for 3 hours to allow molten Si to permeate the preform. At the same time, after forming a Si layer on a part of the upper surface of the preform, it is cooled and S
A composite material having an i-layer was produced.
【００２３】得られた複合材料を図１に示す形状とサイ
ズ（単位ｍｍ）に機械加工し、併せて図１に示す真空吸
引穴を機械加工で設けた。次いで、この複合材料のＳｉ
層表面を研削し、研磨して搬送治具を作製した。The obtained composite material was machined into the shape and size (unit: mm) shown in FIG. 1, and the vacuum suction holes shown in FIG. 1 were also machined. Then, the composite material Si
The surface of the layer was ground and polished to produce a transport jig.
【００２４】（２）評価 得られた搬送治具のＳｉ層表面の表面粗さＲｍａｘを表
面粗さ計で調べた。また、その平坦度を接触型測長器で
調べた。さらに、その表面を目視観察して表面の状態を
観察した。さらにまた、この治具にウェハの脱着を１０
０回繰り返し行い、そのウェハの脱着面を目視で観察し
て観察できる発生した傷の個数を調べた。それらの結果
を表１に示す。(2) Evaluation The surface roughness Rmax of the Si layer surface of the obtained transport jig was examined by a surface roughness meter. The flatness was examined with a contact length measuring device. Further, the surface was visually observed to observe the state of the surface. Furthermore, the wafer must be attached to and detached from the jig by 10 times.
This was repeated 0 times, and the number of generated scratches observable by visually observing the detached surface of the wafer was examined. Table 1 shows the results.
【００２５】（実施例２）プリフォームの粉末充填率を
５０体積％とした他は実施例１と同様に搬送治具を作製
し、評価した。その結果も表１に示す。Example 2 A transfer jig was prepared and evaluated in the same manner as in Example 1 except that the powder filling rate of the preform was changed to 50% by volume. Table 1 also shows the results.
【００２６】（比較例）比較のために比較例１では、Ｓ
ｉの浸透温度を本発明の温度より低くした他は実施例１
と同様に、比較例２では、Ｓｉの浸透温度を本発明の温
度より高くした他は実施例１と同様に搬送治具を作製
し、評価した。その結果も表１に示す。(Comparative Example) For comparison, in Comparative Example 1, S
Example 1 except that the permeation temperature of i was lower than that of the present invention
Similarly to Comparative Example 2, a transport jig was prepared and evaluated in the same manner as in Example 1 except that the permeation temperature of Si was higher than the temperature of the present invention. Table 1 also shows the results.
【００２７】[0027]
【表１】 [Table 1]
【００２８】表１から明らかなように、実施例１、２で
は、Ｓｉ層表面の表面粗さＲｍａｘが０．５μｍ以下に
あり、平坦度も５μｍ以下にあるので、搬送試験した後
のＳｉウェハ表面に生じた傷はごく僅かであった。この
ことは、複合材料の表面にＳｉ層を形成すれば、極めて
平滑な表面を有する搬送治具が得られることを示してい
る。As is clear from Table 1, in Examples 1 and 2, the surface roughness Rmax of the surface of the Si layer was 0.5 μm or less and the flatness was 5 μm or less. The surface had very few scratches. This indicates that if a Si layer is formed on the surface of the composite material, a transfer jig having an extremely smooth surface can be obtained.
【００２９】これに対して比較例１では、Ｓｉの浸透温
度が低すぎたので、Ｓｉ層が十分形成されず、Ｓｉ層の
表面にポアが多数見られ、使いものにならなかった。ま
た、比較例２では、Ｓｉの浸透温度が高すぎたので、Ｓ
ｉが揮発してやはりＳｉ層の表面にポアが多数見られ、
使いものにならなかった。On the other hand, in Comparative Example 1, since the permeation temperature of Si was too low, the Si layer was not sufficiently formed, and a large number of pores were observed on the surface of the Si layer, making the sample unusable. In Comparative Example 2, since the permeation temperature of Si was too high, S
i evaporates and many pores are seen on the surface of the Si layer,
Did not use.
【００３０】[0030]
【発明の効果】以上の通り、本発明の搬送治具であれ
ば、十分に満足できる極めて優れた平滑な表面を有する
搬送治具とすることができるようになった。このことに
より、ほとんど傷をつけずに搬送できる搬送治具を提供
できるようになった。As described above, with the transfer jig of the present invention, a sufficiently satisfactory transfer jig having an extremely smooth surface can be obtained. This has made it possible to provide a transport jig that can be transported with almost no damage.
【図１】本発明の搬送治具の平面図を示す。FIG. 1 shows a plan view of a transport jig of the present invention.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 原田 保 東京都江東区清澄１−２−23 太平洋セメ ント株式 会社 中央研究所 (72)発明者 青木 一郎 東京都江東区清澄１−２−23 太平洋セメ ント株式 会社 中央研究所 Ｆターム(参考） 3F061 AA01 CA01 CB01 CB05 DB00 DB04 DB06 4G001 BA22 BA78 BB22 BB62 BC32 BC33 BC52 BC54 BD18 5F031 CA02 GA02 GA08 GA32 GA33 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tamotsu Harada 1-2-23 Kiyosumi, Koto-ku, Tokyo Central Research Institute of Pacific Cement Co., Ltd. (72) Inventor Ichiro Aoki 1-2-23 Kiyosumi, Koto-ku, Tokyo Pacific Cement Co., Ltd. Central Research Laboratory F-term (reference) 3F061 AA01 CA01 CB01 CB05 DB00 DB04 DB06 4G001 BA22 BA78 BB22 BB62 BC32 BC33 BC52 BC54 BD18 5F031 CA02 GA02 GA08 GA32 GA33
Claims (6)
て、その治具が、Ｓｉウェハとの接触部分を含む表面の
一部または全部が表面を研磨されたＳｉ層で被覆されて
いるＳｉとＳｉＣ粉末との複合材料からなることを特徴
とするＳｉウェハ搬送治具。1. A transfer jig for transferring a Si wafer, wherein the jig is partially or entirely covered with a Si layer whose surface is polished, including a part in contact with the Si wafer. A jig for transferring a Si wafer, comprising a composite material of SiC and SiC powder.
が、５０体積％以上であることを特徴とする請求項１記
載のＳｉウェハ搬送治具。2. The Si wafer transfer jig according to claim 1, wherein the content of the SiC powder in the composite material is 50% by volume or more.
が、Ｒｍａｘで０．５μｍ以下で、かつ平坦度が、５μ
ｍ以下であることを特徴とする請求項１または２記載の
Ｓｉウェハ搬送治具。3. The surface roughness of the polished surface of the Si layer is 0.5 μm or less in Rmax and the flatness is 5 μm.
3. The jig for transferring a Si wafer according to claim 1, wherein the distance is equal to or less than m.
ーを添加して混合し、その混合粉末でプリフォームを形
成し、そのプリフォームに１５００〜１７００℃の温度
で溶融したＳｉを真空中またはアルゴン雰囲気中で浸透
させると同時に、プリフォームの表面の一部または全部
にＳｉ層を形成し、そのＳｉ層の表面を研磨加工するこ
とを特徴とするＳｉウェハ搬送治具の製造方法。4. An organic binder is added to and mixed with SiC powder as a reinforcing material, a preform is formed from the mixed powder, and Si melted at a temperature of 1500 to 1700 ° C. is added to the preform in a vacuum or argon. A method for manufacturing a Si wafer transport jig, wherein a Si layer is formed on a part or the entire surface of a preform at the same time as infiltrating in an atmosphere, and the surface of the Si layer is polished.
率が、５０体積％以上であることを特徴とする請求項４
記載のＳｉウェハ搬送治具の製造方法。5. The preform according to claim 4, wherein a filling rate of the SiC powder in the preform is 50% by volume or more.
The manufacturing method of the described Si wafer transfer jig.
が、Ｒｍａｘで０．５μｍ以下で、かつ平坦度が、５μ
ｍ以下であることを特徴とする請求項４または５記載の
Ｓｉウェハ搬送治具の製造方法。6. The polished surface of the Si layer has a surface roughness Rmax of 0.5 μm or less and a flatness of 5 μm.
The method for manufacturing a Si wafer transfer jig according to claim 4 or 5, wherein m is equal to or less than m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000169888A JP2001351961A (en) | 2000-06-07 | 2000-06-07 | Si WAFER CONVEYING JIG AND ITS MANUFACTURING METHOD |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000169888A JP2001351961A (en) | 2000-06-07 | 2000-06-07 | Si WAFER CONVEYING JIG AND ITS MANUFACTURING METHOD |
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| Publication Number | Publication Date |
|---|---|
| JP2001351961A true JP2001351961A (en) | 2001-12-21 |
Family
ID=18672679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000169888A Pending JP2001351961A (en) | 2000-06-07 | 2000-06-07 | Si WAFER CONVEYING JIG AND ITS MANUFACTURING METHOD |
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| Country | Link |
|---|---|
| JP (1) | JP2001351961A (en) |
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|---|---|---|---|---|
| EP1560672A2 (en) * | 2002-11-12 | 2005-08-10 | Saint-Gobain Ceramics and Plastics, Inc. | Method and apparatus for casting coarse grain siliconized silicon carbide parts |
| JP2007012737A (en) * | 2005-06-29 | 2007-01-18 | Disco Abrasive Syst Ltd | Wafer transfer device |
| WO2017122619A1 (en) | 2016-01-15 | 2017-07-20 | 日東電工株式会社 | Mounting member |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1560672A4 (en) * | 2002-11-12 | 2006-12-06 | Saint Gobain Ceramics | Method and apparatus for casting coarse grain siliconized silicon carbide parts |
| EP1560672A2 (en) * | 2002-11-12 | 2005-08-10 | Saint-Gobain Ceramics and Plastics, Inc. | Method and apparatus for casting coarse grain siliconized silicon carbide parts |
| JP2007012737A (en) * | 2005-06-29 | 2007-01-18 | Disco Abrasive Syst Ltd | Wafer transfer device |
| JP4526449B2 (en) * | 2005-06-29 | 2010-08-18 | 株式会社ディスコ | Wafer transfer device |
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| WO2017122619A1 (en) | 2016-01-15 | 2017-07-20 | 日東電工株式会社 | Mounting member |
| WO2017122621A1 (en) | 2016-01-15 | 2017-07-20 | 日東電工株式会社 | Mounting member |
| US10879103B2 (en) | 2016-01-15 | 2020-12-29 | Nitto Denko Corporation | Mounting member |
| US10796941B2 (en) | 2016-01-15 | 2020-10-06 | Nitto Denko Corporation | Mounting member |
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| KR20190039121A (en) | 2016-08-12 | 2019-04-10 | 닛토덴코 가부시키가이샤 | Carbon nanotube aggregate |
| KR20190039946A (en) | 2016-08-12 | 2019-04-16 | 닛토덴코 가부시키가이샤 | Sticky structure |
| WO2018030182A1 (en) | 2016-08-12 | 2018-02-15 | 日東電工株式会社 | Carbon nanotube aggregate |
| KR20190055815A (en) | 2016-10-03 | 2019-05-23 | 닛토덴코 가부시키가이샤 | Carbon nanotube aggregate |
| KR20190055816A (en) | 2016-10-03 | 2019-05-23 | 닛토덴코 가부시키가이샤 | Carbon nanotube aggregate |
| WO2018066222A1 (en) | 2016-10-03 | 2018-04-12 | 日東電工株式会社 | Carbon nanotube aggregate |
| US11390525B2 (en) | 2016-10-03 | 2022-07-19 | Nitto Denko Corporation | Carbon nanotube aggregate comprising a non-aligned portion |
| WO2019155947A1 (en) | 2018-02-06 | 2019-08-15 | 日東電工株式会社 | Carbon nanotube aggregate |
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