JP2001338873A5 - - Google Patents
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- JP2001338873A5 JP2001338873A5 JP2001079661A JP2001079661A JP2001338873A5 JP 2001338873 A5 JP2001338873 A5 JP 2001338873A5 JP 2001079661 A JP2001079661 A JP 2001079661A JP 2001079661 A JP2001079661 A JP 2001079661A JP 2001338873 A5 JP2001338873 A5 JP 2001338873A5
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001079661A JP4986332B2 (ja) | 2000-03-21 | 2001-03-21 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-79159 | 2000-03-21 | ||
| JP2000079159 | 2000-03-21 | ||
| JP2000079159 | 2000-03-21 | ||
| JP2001079661A JP4986332B2 (ja) | 2000-03-21 | 2001-03-21 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001338873A JP2001338873A (ja) | 2001-12-07 |
| JP2001338873A5 true JP2001338873A5 (https=) | 2007-06-14 |
| JP4986332B2 JP4986332B2 (ja) | 2012-07-25 |
Family
ID=26588010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001079661A Expired - Fee Related JP4986332B2 (ja) | 2000-03-21 | 2001-03-21 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4986332B2 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7078322B2 (en) | 2001-11-29 | 2006-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor |
| JP2003229359A (ja) * | 2001-11-29 | 2003-08-15 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US6906349B2 (en) * | 2003-01-08 | 2005-06-14 | Samsung Electronics Co., Ltd. | Polysilicon thin film transistor array panel and manufacturing method thereof |
| CN102544027B (zh) | 2004-09-15 | 2016-02-17 | 株式会社半导体能源研究所 | 半导体器件 |
| JP4935059B2 (ja) | 2005-02-17 | 2012-05-23 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP5227563B2 (ja) * | 2006-10-26 | 2013-07-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5339322B2 (ja) * | 2007-04-20 | 2013-11-13 | 国立大学法人山口大学 | レーザによるシリコン結晶成長方法 |
| WO2010126001A1 (ja) * | 2009-05-01 | 2010-11-04 | 株式会社日本製鋼所 | 結晶質膜の製造方法および製造装置 |
| US20210225653A1 (en) * | 2018-06-06 | 2021-07-22 | Sakai Display Products Corporation | Laser annealing method, laser annealing apparatus and method for producing active matrix substrate |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2817613B2 (ja) * | 1994-02-23 | 1998-10-30 | 日本電気株式会社 | 結晶シリコン膜の形成方法 |
| JP3433856B2 (ja) * | 1995-02-22 | 2003-08-04 | 住友重機械工業株式会社 | 非晶質薄膜結晶化方法 |
| JP3729955B2 (ja) * | 1996-01-19 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2000039628A (ja) * | 1998-05-16 | 2000-02-08 | Semiconductor Energy Lab Co Ltd | 半導体表示装置 |
| JP2000269133A (ja) * | 1999-03-16 | 2000-09-29 | Seiko Epson Corp | 薄膜半導体装置の製造方法 |
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2001
- 2001-03-21 JP JP2001079661A patent/JP4986332B2/ja not_active Expired - Fee Related