JP2001332741A5 - - Google Patents

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Publication number
JP2001332741A5
JP2001332741A5 JP2000154049A JP2000154049A JP2001332741A5 JP 2001332741 A5 JP2001332741 A5 JP 2001332741A5 JP 2000154049 A JP2000154049 A JP 2000154049A JP 2000154049 A JP2000154049 A JP 2000154049A JP 2001332741 A5 JP2001332741 A5 JP 2001332741A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000154049A
Other languages
Japanese (ja)
Other versions
JP2001332741A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000154049A priority Critical patent/JP2001332741A/ja
Priority claimed from JP2000154049A external-priority patent/JP2001332741A/ja
Priority to TW090112525A priority patent/TW519764B/zh
Priority to US09/865,104 priority patent/US6599783B2/en
Priority to KR1020010029012A priority patent/KR20010107764A/ko
Publication of JP2001332741A publication Critical patent/JP2001332741A/ja
Priority to US10/453,952 priority patent/US20030211668A1/en
Priority to US10/454,297 priority patent/US20030211667A1/en
Publication of JP2001332741A5 publication Critical patent/JP2001332741A5/ja
Pending legal-status Critical Current

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JP2000154049A 2000-05-25 2000-05-25 薄膜トランジスタの製造方法 Pending JP2001332741A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000154049A JP2001332741A (ja) 2000-05-25 2000-05-25 薄膜トランジスタの製造方法
TW090112525A TW519764B (en) 2000-05-25 2001-05-24 Method of fabricating thin film transistor
US09/865,104 US6599783B2 (en) 2000-05-25 2001-05-24 Method of fabricating a thin film including a protective layer as a mask
KR1020010029012A KR20010107764A (ko) 2000-05-25 2001-05-25 박막 트랜지스터 제조 방법
US10/453,952 US20030211668A1 (en) 2000-05-25 2003-06-04 Method of fabricating thin film transistor
US10/454,297 US20030211667A1 (en) 2000-05-25 2003-06-04 Method of fabricating thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000154049A JP2001332741A (ja) 2000-05-25 2000-05-25 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JP2001332741A JP2001332741A (ja) 2001-11-30
JP2001332741A5 true JP2001332741A5 (US20040097461A1-20040520-C00002.png) 2007-06-07

Family

ID=18659203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000154049A Pending JP2001332741A (ja) 2000-05-25 2000-05-25 薄膜トランジスタの製造方法

Country Status (4)

Country Link
US (3) US6599783B2 (US20040097461A1-20040520-C00002.png)
JP (1) JP2001332741A (US20040097461A1-20040520-C00002.png)
KR (1) KR20010107764A (US20040097461A1-20040520-C00002.png)
TW (1) TW519764B (US20040097461A1-20040520-C00002.png)

Families Citing this family (39)

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JP2002076352A (ja) * 2000-08-31 2002-03-15 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
TW525402B (en) 2001-01-18 2003-03-21 Semiconductor Energy Lab Process for producing a light emitting device
KR100766493B1 (ko) * 2001-02-12 2007-10-15 삼성전자주식회사 박막트랜지스터 액정표시장치
US6720198B2 (en) * 2001-02-19 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
SG143944A1 (en) 2001-02-19 2008-07-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
KR100437475B1 (ko) * 2001-04-13 2004-06-23 삼성에스디아이 주식회사 평판 디스플레이 장치용 표시 소자 제조 방법
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
JP2003168645A (ja) * 2001-12-03 2003-06-13 Hitachi Ltd 半導体薄膜装置、その製造方法及び画像表示装置
TW200302511A (en) * 2002-01-28 2003-08-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TWI261358B (en) * 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
CN101217150B (zh) * 2002-03-05 2011-04-06 株式会社半导体能源研究所 半导体元件和使用半导体元件的半导体装置
US7579771B2 (en) 2002-04-23 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7786496B2 (en) * 2002-04-24 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
JP2003317971A (ja) 2002-04-26 2003-11-07 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US7303945B2 (en) 2002-06-06 2007-12-04 Nec Corporation Method for forming pattern of stacked film and thin film transistor
US6933241B2 (en) 2002-06-06 2005-08-23 Nec Corporation Method for forming pattern of stacked film
US7897979B2 (en) * 2002-06-07 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US7230271B2 (en) 2002-06-11 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising film having hygroscopic property and transparency and manufacturing method thereof
JP4216008B2 (ja) * 2002-06-27 2009-01-28 株式会社半導体エネルギー研究所 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、dvdプレーヤー、電子遊技機器、または携帯情報端末
SG130013A1 (en) * 2002-07-25 2007-03-20 Semiconductor Energy Lab Method of fabricating light emitting device
WO2004026002A1 (en) * 2002-09-11 2004-03-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting apparatus and fabrication method of the same
KR100466628B1 (ko) * 2002-11-12 2005-01-15 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
JP4373086B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 発光装置
US7202504B2 (en) 2004-05-20 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and display device
US7112455B2 (en) 2004-06-10 2006-09-26 Freescale Semiconductor, Inc Semiconductor optical devices and method for forming
US20070054429A1 (en) * 2005-08-25 2007-03-08 Tsuan-Lun Lung Back panel manufacturing process
US7675078B2 (en) * 2005-09-14 2010-03-09 Chunghwa Picture Tubes, Ltd. Pixel structure
JP5208591B2 (ja) * 2007-06-28 2013-06-12 株式会社半導体エネルギー研究所 発光装置、及び照明装置
JP2009206508A (ja) * 2008-01-31 2009-09-10 Canon Inc 薄膜トランジスタ及び表示装置
KR101510212B1 (ko) * 2008-06-05 2015-04-10 삼성전자주식회사 산화물 반도체 박막 트랜지스터의 제조방법
KR101352237B1 (ko) * 2008-08-13 2014-01-16 엘지디스플레이 주식회사 유기전계발광표시장치의 제조방법
KR20110090408A (ko) 2010-02-03 2011-08-10 삼성전자주식회사 박막 형성 방법, 표시판용 금속 배선 및 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법
TWI556319B (zh) 2011-11-30 2016-11-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP6190192B2 (ja) * 2013-07-16 2017-08-30 ソニーセミコンダクタソリューションズ株式会社 放射線撮像装置および放射線撮像表示システム
KR20150137214A (ko) * 2014-05-28 2015-12-09 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
KR20170109182A (ko) * 2016-03-18 2017-09-28 삼성디스플레이 주식회사 박막트랜지스터와 제조 방법, 및 이를 포함하는 유기 발광 표시 장치
CN109585566B (zh) * 2018-11-14 2021-05-18 惠科股份有限公司 一种阵列基板、阵列基板的制作方法和显示面板

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JP3035451B2 (ja) * 1994-07-19 2000-04-24 大日本スクリーン製造株式会社 基板の表面処理装置
JPH08153699A (ja) * 1994-09-16 1996-06-11 Semiconductor Energy Lab Co Ltd 薄膜半導体装置の作製方法
EP0801427A3 (en) * 1996-04-11 1999-05-06 Matsushita Electric Industrial Co., Ltd. Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device
JP3463971B2 (ja) * 1996-12-26 2003-11-05 出光興産株式会社 有機アクティブel発光装置
JP3976828B2 (ja) * 1997-02-17 2007-09-19 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法
US6392720B1 (en) * 1998-12-17 2002-05-21 Lg Electronics, Inc. Substrate structure of a liquid crystal display and a manufacturing method thereof

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